CN217903119U - Gallium nitride power device - Google Patents
Gallium nitride power device Download PDFInfo
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- CN217903119U CN217903119U CN202221790359.XU CN202221790359U CN217903119U CN 217903119 U CN217903119 U CN 217903119U CN 202221790359 U CN202221790359 U CN 202221790359U CN 217903119 U CN217903119 U CN 217903119U
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Abstract
The utility model provides a gallium nitride power device, including the gallium nitride chip, the diode, the metal post, the heating panel, base plate and PCB board, wherein the base plate inlays in the PCB board, gallium nitride chip and diode are arranged in between heating panel and the PCB board, gallium nitride chip substrate layer and diode positive pole link to each other with the heating panel, the electrode and the diode negative pole of gallium nitride chip pass through the solder ball and are connected with the base plate, the diode negative pole passes through the solder ball with gallium nitride chip drain electrode and realizes electrical connection, the heating panel passes through the metal post and links to each other with gallium nitride chip source electrode, the diode positive pole passes through the metal post and links to each other with gallium nitride chip source electrode. The gallium nitride chip and the diode are integrated in one device to form electrical parallel connection, so that the power consumption of the gallium nitride device in reverse conduction is reduced, the gallium nitride device is protected, the gallium nitride chip adopts an inverted installation mode, the length of a lead between the gallium nitride device and the diode is shortened, the parasitic effect generated by the lead is reduced, and the reliability of a circuit is improved.
Description
Technical Field
The utility model relates to a semiconductor device field especially relates to a gallium nitride power device and a semiconductor device.
Background
As a third-generation semiconductor material, a gallium nitride device has the advantages of large forbidden band width, high breakdown strength, high thermal conductivity, strong radiation resistance, stable chemical property and high power density, and can realize higher switching frequency and higher system efficiency and power density. In practical application, because the gallium nitride device has larger loss in reverse conduction but no body diode is used for reducing the loss, a diode is required to be connected in parallel to reduce the power loss of the gallium nitride device in reverse conduction, and meanwhile, the diode is subjected to reverse breakdown before the gallium nitride device is damaged in overvoltage of a power supply, and a path can be provided for reverse induced voltage when the circuit has reverse induced voltage, so that the gallium nitride device is prevented from being broken down.
The traditional gallium nitride device and the discrete diode are electrically connected in parallel by paving copper wires on a PCB (printed circuit board) in a circuit, the gallium nitride device and the diode respectively occupy larger volume as the discrete device, and the longer lead easily causes the circuit to generate parasitic parameters so as to influence the performance of the whole module.
In summary, in the prior art, the gan device and the diode are connected in parallel as separate devices, which occupies a large volume and the performance of the whole circuit module is affected by too long wires.
SUMMERY OF THE UTILITY MODEL
Therefore, the utility model aims to solve the technical problem that the parasitic parameters caused by the long length of the conducting wire affect the performance of the module because the gallium nitride device and the diode are connected in parallel and have large volume in the prior art.
In order to solve the above technical problem, the present invention provides a gallium nitride power device.
In an embodiment of the present invention, the gallium nitride power device includes:
a heat dissipation plate;
PCB board: a substrate is embedded in the PCB;
a gallium nitride chip: the substrate layer of the gallium nitride chip is connected with the heat dissipation plate, the electrode of the gallium nitride chip faces the substrate and is electrically connected with the substrate through a solder ball, and the source electrode of the gallium nitride chip is connected with the heat dissipation plate through a metal column;
a diode: the diode anode is connected with the radiating plate and is electrically connected with the source electrode of the gallium nitride chip through a metal column, the diode cathode is electrically connected with the substrate through a solder ball, and the diode cathode and the drain electrode of the gallium nitride chip are connected with the same substrate through a solder ball to realize electrical connection.
In an embodiment of the present invention, the diode anode and the gallium nitride chip substrate layer are connected to the heat dissipation plate through an adhesive, and the adhesive is an electrically conductive and thermally conductive adhesive.
In an embodiment of the present invention, the heat dissipation plate is a back copper plate.
In an embodiment of the present invention, the substrate is a copper plate.
In an embodiment of the present invention, the substrate is exposed at the connection portion, and the remaining portion is covered with the solder resist layer.
In an embodiment of the present invention, a plurality of solder balls are implanted outside the substrate to connect the gan chip electrode to the outside.
In one embodiment of the present invention, the gallium nitride chip substrate layer is a silicon substrate layer.
In an embodiment of the present invention, the gan chip epitaxial wafer includes an aluminum nitride nucleation layer, a gan buffer layer, a gan channel layer, an algan barrier layer, and a P-type gan gate layer.
In an embodiment of the present invention, the gallium nitride power device is encapsulated by epoxy.
The utility model also discloses a semiconductor device, semiconductor device includes foretell gallium nitride power device.
The gallium nitride power device of the utility model integrates the gallium nitride chip and the diode into one device to form electrical parallel connection, thereby reducing the power loss when the gallium nitride device is reversely conducted and avoiding the breakdown of the gallium nitride device when the circuit has reverse induced voltage; the substrate layer of the gallium nitride chip and the anode of the diode are connected with the radiating plate, the electrode of the gallium nitride chip and the cathode of the diode are electrically connected with the substrate through a solder ball, the source electrode of the gallium nitride chip is connected with the radiating plate through a metal column, the cathode of the diode and the drain electrode of the gallium nitride chip are electrically connected through a solder ball, the length of a lead between the gallium nitride chip and the diode is shortened, the parasitic effect generated by the lead and the fault occurrence rate of the whole circuit are reduced, and the reliability of the circuit is improved.
Drawings
In order to make the content of the invention more clearly understood, the invention will now be described in further detail with reference to specific embodiments thereof, taken in conjunction with the accompanying drawings, in which
FIG. 1 is a schematic illustration of a gallium nitride device in parallel with a diode;
FIG. 2 is a schematic cross-sectional view of a gallium nitride power device;
fig. 3 is a schematic cross-sectional view of a gallium nitride power device.
(in the figure, 1 is a GaN chip, 2 is a diode anode, 3 is a diode cathode, 4 is a heat sink, 5 is a metal column, 6 is a substrate, 7 is a PCB, 8 is a solder ball, 9 is an adhesive, 10 is a GaN chip gate pad, 11 is a GaN chip source pad, and 12 is a GaN chip drain pad.)
Detailed Description
The present invention is further described with reference to the following drawings and specific embodiments so that those skilled in the art can better understand the present invention and can implement the present invention, but the embodiments are not to be construed as limiting the present invention.
Referring to fig. 1, the gallium nitride device has no body diode, and in practical application, when the gallium nitride device is reversely turned on, there is no diode to reduce loss, so that a diode needs to be connected in parallel, the left side in the figure is the gallium nitride device, where D is a gallium nitride drain, G is a gallium nitride gate, S is a gallium nitride source, and the right side is the diode, an anode of the diode is connected to a source of the gallium nitride device, a cathode of the diode is connected to the gallium nitride device drain, before the gallium nitride device is damaged by power supply overvoltage, the diode is reversely broken down, and a large current is directly connected to the ground, so that the gallium nitride device is prevented from being burned out, and when a circuit has a reverse induced voltage, a reverse induced voltage can be provided to a path, so that the reverse induced voltage is prevented from breaking down the gallium nitride device.
Because gallium nitride device and diode can occupy great volume as the discrete device is parallelly connected, and the wire overlength leads to the circuit to produce parasitic parameter easily and influences the performance, consequently the utility model discloses form electric parallelly connected in a device with gallium nitride chip and diode integration.
In one embodiment of the present invention, the cross section of the gan power device is shown in fig. 2, which includes a heat sink plate; the PCB board is embedded with a substrate; the gallium nitride chip is arranged between the heat dissipation plate and the PCB, wherein the substrate layer of the gallium nitride chip is connected with the heat dissipation plate through adhesive glue, the electrode of the gallium nitride chip faces the substrate and is electrically connected with the substrate through a solder ball, and the source electrode of the gallium nitride chip is connected with the heat dissipation plate through a metal column; the diode is arranged between the heat dissipation plate and the PCB, wherein the anode of the diode is connected with the heat dissipation plate through adhesive, the anode of the diode is electrically connected with the source electrode of the gallium nitride chip through the metal column, and the cathode of the diode is connected with the same substrate through a solder ball and the drain electrode of the gallium nitride chip through the solder ball;
a schematic cross-sectional view of the gan power device is shown in fig. 3, in which a gate of the gan chip is electrically connected to the substrate through a gate pad, a source of the gan chip is electrically connected to the substrate through a source pad, and a drain of the gan chip is connected to the substrate through a drain pad;
the heat dissipation plate can be a back copper plate or other metal plates, and the embodiment adopts the back copper plate with high heat conductivity, so that the heat dissipation efficiency of the device is improved; the adhesive glue is conductive heat-conducting glue; the solder balls are solder balls; the substrate is a copper plate, a plurality of solder balls are planted on the outer side of the substrate and used for connecting the gallium nitride chip electrode with the outside, the substrate is exposed only at the position needing to be connected, and the other positions are covered with solder mask layers to prevent the substrate from being oxidized.
In another embodiment of the present invention, the substrate layer of the gan chip is a silicon substrate layer, and is generally prepared by using a 6-inch or 8-inch silicon substrate, the epitaxial wafer of the gan device includes an aluminum nitride nucleation layer, a gan buffer layer, a gan channel layer, an algan barrier layer and a P-type gan gate layer, the channel, voltage resistance, size and peripheral protection ring of the gan device are defined by 10 multi-mask process, and then the gate, the metal width of the source and drain of the gan device, the connection between the metal and the outside world, etc. are defined by the following metal interconnection process, the protection and insulation between the metal and the metal formed by the oxide or nitride medium are tested and screened, the unqualified device is not packaged, the qualified gan device is packaged, the packaging type and size are determined before packaging, including but not limited to surface packaging, direct insert packaging, grinding, etc., the packaging process includes the front side film pasting of the wafer, the back, the wafer diamond and the plastic package knife are cut, the chip is fixed on the frame, the chip, and the wire bonding is performed;
the method comprises the steps of integrating a packaged gallium nitride chip and a diode into a device, wherein the gallium nitride chip is connected in an inverted mode, a silicon substrate layer of the chip and an anode of the diode are connected with a high-heat-conduction back copper plate through bonding glue, the heat dissipation efficiency of the device is improved, solder bumps are manufactured on electrodes of a cathode of the diode and the gallium nitride chip and on the surface of a substrate, the substrate is a copper plate, metallization treatment is needed before the solder bumps are manufactured to improve solderability, meanwhile, the volume of solder in a joint is increased to enable the joint to be more flexible, the solder bumps on the gallium nitride chip and the diode and the solder bumps on the substrate are aligned and attached, then solder balls are formed among bonding pads through a solder reflow process, electrical connection among the electrode of the gallium nitride chip, the cathode of the diode and the substrate is achieved, the back copper plate and a source electrode of the gallium nitride chip are connected through a metal column, and finally the chip and the bonding pads are protected through molding encapsulation or liquid glue encapsulation.
The semiconductor device integrated by the gallium nitride chip and the diode reduces the power loss when the gallium nitride is reversely conducted, avoids the breakdown of the gallium nitride device when reverse induced voltage exists, reduces the parasitic effect generated by a lead and the fault occurrence rate of a whole circuit, and can be widely applied to the field of semiconductors.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This need not be, nor should it be exhaustive of all embodiments. And obvious changes and modifications can be made without departing from the scope of the invention.
Claims (10)
1. A gallium nitride power device, comprising:
a heat dissipation plate;
PCB board: a substrate is embedded in the PCB;
a gallium nitride chip: the substrate layer of the gallium nitride chip is connected with the heat dissipation plate, the electrode of the gallium nitride chip faces the substrate and is electrically connected with the substrate through a solder ball, and the source electrode of the gallium nitride chip is connected with the heat dissipation plate through a metal column;
a diode: the diode anode is connected with the radiating plate and is electrically connected with the source electrode of the gallium nitride chip through a metal column, the diode cathode is electrically connected with the substrate through a solder ball, and the diode cathode and the drain electrode of the gallium nitride chip are connected with the same substrate through a solder ball to realize electrical connection.
2. The gan power device of claim 1, wherein the diode anode and the gan chip substrate layer are connected to the heat spreader by an adhesive, and the adhesive is an electrically and thermally conductive adhesive.
3. The gallium nitride power device according to claim 1, wherein the heat dissipation plate is a copper back plate.
4. The gallium nitride power device according to claim 1, wherein the substrate is a copper plate.
5. The gallium nitride power device according to claim 1, wherein the substrate is exposed at the connection site, and the remaining sites are covered with a solder resist layer.
6. The GaN power device as claimed in claim 1, wherein a plurality of solder balls are implanted on the outer side of the substrate to connect the GaN chip electrode with the outside.
7. The gallium nitride power device of claim 1, wherein the gallium nitride chip substrate layer is a silicon substrate layer.
8. The gallium nitride power device according to claim 1, wherein the gallium nitride chip epitaxial wafer comprises an aluminum nitride nucleation layer, a gallium nitride buffer layer, a gallium nitride channel layer, an aluminum gallium nitride barrier layer, and a P-type gallium nitride gate layer.
9. The gallium nitride power device according to claim 1, wherein the gallium nitride power device is encapsulated externally with epoxy.
10. A semiconductor device, characterized in that it comprises a gallium nitride power device according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221790359.XU CN217903119U (en) | 2022-07-12 | 2022-07-12 | Gallium nitride power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221790359.XU CN217903119U (en) | 2022-07-12 | 2022-07-12 | Gallium nitride power device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217903119U true CN217903119U (en) | 2022-11-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221790359.XU Active CN217903119U (en) | 2022-07-12 | 2022-07-12 | Gallium nitride power device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217903119U (en) |
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2022
- 2022-07-12 CN CN202221790359.XU patent/CN217903119U/en active Active
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