CN210349819U - Power device module - Google Patents

Power device module Download PDF

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Publication number
CN210349819U
CN210349819U CN201921390527.4U CN201921390527U CN210349819U CN 210349819 U CN210349819 U CN 210349819U CN 201921390527 U CN201921390527 U CN 201921390527U CN 210349819 U CN210349819 U CN 210349819U
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CN
China
Prior art keywords
power device
conductive
pattern layer
conductive pattern
circuit board
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Active
Application number
CN201921390527.4U
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Chinese (zh)
Inventor
赵永新
林伟健
李汉祥
李其鸿
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Fengpeng Electronics Zhuhai Co Ltd
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Fengpeng Electronics Zhuhai Co Ltd
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Priority to CN201921390527.4U priority Critical patent/CN210349819U/en
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331Disposition
    • H01L2224/3318Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181On opposite sides of the body
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

The utility model relates to a power device module, which comprises a resin packaging body, a power device and a circuit board, wherein the power device and the circuit board are packaged in the resin packaging body; the metal substrate is arranged on the surface of the resin packaging body and is parallel to the circuit board; the metal substrate is provided with a plurality of conductive discs; a circuit element encapsulated in the resin encapsulation and soldered to the first conductive pattern; two opposite surfaces of the power device are respectively welded to the metal substrate and the circuit board; and the pins of the first surface of the power device are welded to the second conductive pattern layer, and the second conductive pattern layer is electrically connected with the conductive disc through the metal support. The utility model discloses a power device module has the good and miniaturized advantage of being convenient for of heat dispersion.

Description

Power device module
Technical Field
The utility model relates to the field of power device packaging; and more particularly, to a power device module in which a circuit element and a power device are integrally packaged.
Background
Power devices such as IGBTs (insulated gate bipolar transistors) and MOSFETs (metal-oxide semiconductor field effect transistors) generate a large amount of heat during operation, and if the heat generated by the power devices cannot be dissipated in time, the operation of the power devices and peripheral circuit elements thereof is seriously affected. Therefore, the power device module is required to have good heat dissipation performance.
Chinese patent document CN108091621A discloses a power device module, which includes a double-sided circuit board and a heat dissipation substrate stacked together; a first bonding pad is arranged on the first surface of the double-sided circuit board, and a second bonding pad is arranged on the second surface opposite to the first surface; the ceramic heat radiator and a power device such as an IGBT are embedded in the heat radiating substrate, a pin of the power device is welded on the first bonding pad, and the other side of the power device, which is opposite to the pin side, is thermally connected with the ceramic heat radiator; and a metal heat dissipation layer connected with the electric insulation heat dissipation body is formed on the surface of one side of the heat dissipation substrate, which is far away from the double-sided circuit board. The power device module also comprises an energy storage device such as a capacitor or an inductor, and a pin of the energy storage device is welded on the second bonding pad.
In the power device module, the ceramic heat radiation body is arranged between the power device and the metal heat radiation layer and is limited by the volume of the ceramic heat radiation body and the thermal resistances at a plurality of interfaces on the heat transfer path, and the heat in the power device is not easy to be quickly transferred to the metal heat radiation layer; in addition, the energy storage device is disposed on the outer surface of the double-sided circuit board (mounting surface of the module), which causes inconvenience in subsequent mounting of the power device module and hinders miniaturization of the product.
Disclosure of Invention
The utility model aims at providing a power device module that has excellent heat dispersion and be convenient for miniaturize.
In order to achieve the above-mentioned main object and other objects, the present invention provides a power device module including a resin package, a power device packaged in the resin package, and:
a circuit board encapsulated in the resin encapsulation; the first surface of the circuit board is provided with a first conductive pattern layer, and the second surface of the circuit board, which is opposite to the first surface, is provided with a second conductive pattern layer;
a metal substrate disposed on a surface of the resin package and parallel to the circuit board; the metal substrate is provided with a plurality of conductive discs;
a circuit element encapsulated in the resin encapsulation and soldered to the first conductive pattern layer;
two opposite surfaces of the power device are respectively welded to the metal substrate and the circuit board; the conductive pins on the first surface of the power device are welded to the second conductive pattern layer of the circuit board, and the second conductive pattern layer is electrically connected with the conductive discs of the metal substrate through the metal supporting piece.
In the technical scheme, the power device is connected with the metal substrate in a welding mode, heat in the power device can be directly and quickly conducted to the metal substrate, and the power device has the advantages of being small in thermal resistance and good in heat dissipation performance. The resin packaging body (namely the packaging body formed by the resin injection molding process) is adopted for packaging, the manufacturing process is simple, the yield is high and the cost is low; the power device and the circuit element are simultaneously packaged in the resin packaging body and are positioned on two opposite sides of the circuit board, so that the miniaturization of the power device module is facilitated; the metal substrate forms the installation face of power device module, and the power device module can adopt SMT paster technology to install fast.
According to the utility model discloses a concrete implementation mode, power device has electrically conductive pin for the second surface of its first surface, and the electrically conductive pin of power device second surface and the corresponding electrically conductive dish welded connection in the metal substrate.
According to the utility model discloses a further embodiment, power device has the heat conduction pin for the second surface of its first surface, and metal substrate has the heat conduction dish, and the heat conduction pin welds to this heat conduction dish.
It should be noted that, in the present invention, when the power device module operates, the conductive pins can have a heat conducting function as well as bear current; the thermally conductive pins, which in some embodiments may be electrically connected to corresponding electrically conductive pins, do not carry current, but merely serve to conduct heat.
The embodiment of the utility model provides an in, the thickness of metal substrate can set up to 0.1 millimeter to 2 millimeters. Preferably, the metal substrate is a copper substrate having a thickness of 0.1 mm to 0.5 mm.
The embodiment of the utility model provides an in, metal support piece can be copper billet or copper post. Preferably, the metal support is solder-connected with the second conductive pattern layer and the conductive pad of the metal substrate.
In the embodiment of the present invention, the power device is, for example, an IGBT chip or a MOSFET chip, but the present invention is not limited thereto, and may be applied to other power devices as well.
In an embodiment of the present invention, the thickness of the first conductive pattern layer and the second conductive pattern layer may be set to 30 micrometers to 100 micrometers; in addition, the circuit board may further have a third conductive pattern layer disposed inside an insulating substrate thereof.
According to the utility model discloses a preferred embodiment, the surface that calorific capacity is bigger among two relative surfaces of power device welds to metal substrate to reach better radiating effect.
To more clearly illustrate the objects, technical solutions and advantages of the present invention, the present invention will be described in further detail with reference to the accompanying drawings and detailed description.
It should be noted that, for the sake of clarity of illustration of the structures to be expressed, different parts in the drawings may not be drawn to the same scale, and therefore, unless explicitly stated otherwise, the contents expressed in the drawings do not constitute a limitation on the size and the proportional relationship of the parts.
Drawings
Fig. 1 is a schematic cross-sectional view of a power device module of embodiment 1 of the present invention;
fig. 2 is a schematic cross-sectional view of a power device module of embodiment 2 of the present invention.
Detailed Description
Example 1
Referring to fig. 1, in the power device module of embodiment 1, the power device 10, the circuit board 20 and the circuit element 40 are packaged in the resin package 60, and the metal substrate 30 parallel to the circuit board 20 is disposed on one surface of the resin package 60. It should be noted that fig. 1 only schematically illustrates one circuit element 40 and one power device 10, but it is to be understood that the number of the circuit elements 40 and the power devices 10 may be one or more, and the present invention is not limited thereto.
The circuit board 20 has an insulating substrate 21, a first conductive pattern layer 22 on a first surface thereof, and a second conductive pattern layer on a second surface thereof, the second conductive pattern layer including conductive traces 231 and 232 separated from each other as shown in fig. 1. The first conductive pattern layer 22 and the second conductive pattern layer have a thickness of about 35 micrometers, and may be electrically connected by a conductive via penetrating the insulating substrate 21. The circuit element 40 is a passive element such as a resistor, a capacitor, an inductor, or the like, and the circuit element 40 is soldered to the first conductive pattern layer 22.
Two opposite surfaces of the power device 10 are soldered to the metal base plate 30 and the circuit board 20, respectively. Specifically in embodiment 1, the power device 10 is a MOSFET chip, and a first surface (a surface adjacent to the circuit board 20) thereof has a G-pole pin 12 and an S-pole pin 13, and a second surface opposite to the first surface thereof has a D-pole pin 11; the current carried by the D-pole pin 11 is relatively large, and the heat generation amount of the second surface of the power device 10 is also relatively large.
The metal substrate 30 is a copper substrate (copper plate) having a thickness of about 0.25 mm, and has a plurality of conductive pads, such as the conductive pads 31, 32, and 33 shown in fig. 1, processed in such a manner as die-cutting, wire-cutting, mechanical cutting, or the like. Wherein, the D-pole pin 11 is welded to the conductive disc 31; the G-pole pin 12 is soldered to the conductive trace 232 of the second conductive pattern layer, and the S-pole pin 13 is soldered to the conductive trace 231 of the second conductive pattern layer. The two ends of the supporting copper block 51 are respectively connected with the conductive trace 231 and the conductive disc 33 in a welding way, so that the electric connection is established between the conductive trace 231 and the conductive disc 33; the two ends of the supporting copper block 52 are soldered to the conductive traces 232 and the conductive pads 32, respectively, thereby establishing electrical connection between the conductive traces 232 and the conductive pads 32.
Example 2
Referring to fig. 2, in the power device module of embodiment 2, the power device 100 is a MOSFET chip with another structure different from that of embodiment 1. Specifically, a first surface (a surface adjacent to the circuit board 20) of the power device 100 has a D-pole pin (not shown), a G-pole pin 113, and an S-pole pin 112, and a second surface opposite to the first surface has a heat conducting pin 111. In the MOSFET chip with this structure, although no current flows through the thermal conductive pin 111(thermal pad) during operation, the thermal conductive pin 111 and the S-pole pin 112 still need to be electrically connected.
The metal substrate 30 has an electrically conductive pad 31 and a thermally conductive pad 34, and the thermally conductive pins 111 are soldered to the thermally conductive pad 34; the G-pole pin 113 is soldered to the conductive trace 231 of the second conductive pattern layer, and the S-pole pin 112 is soldered to the conductive trace 232 of the second conductive pattern layer. Both ends of the supporting copper block 51 are welded to the conductive trace 231 and the conductive pad 31, respectively, thereby establishing electrical connection between the conductive trace 231 and the conductive pad 31; the two ends of the supporting copper block 52 are respectively welded to the electrically conductive trace 232 and the thermally conductive pad 34 to establish electrical connection between the electrically conductive trace 232 and the thermally conductive pad 34, thereby achieving electrical connection between the thermally conductive pin 111 and the S-pole pin 112.
It will be readily appreciated that the D-pole pin of the first surface of the power device 100 is also electrically connected to a corresponding conductive pad in the metal substrate 30 through the supporting copper block. For the description of the structure of other parts of the power device module in embodiment 2, reference may be made to embodiment 1, and details are not repeated here.
Although the present invention has been described with reference to specific embodiments, the embodiments are not intended to limit the scope of the invention. Any person skilled in the art can make some modifications without departing from the scope of the invention, i.e. all equivalent modifications made according to the invention are intended to be covered by the scope of the invention. Therefore, the protection scope of the present invention is subject to the claims.

Claims (10)

1. A power device module comprises a resin packaging body and a power device packaged in the resin packaging body, and is characterized in that:
a circuit board encapsulated in the resin encapsulation; the first surface of the circuit board is provided with a first conductive pattern layer, and the second surface of the circuit board, which is opposite to the first surface, is provided with a second conductive pattern layer;
a metal substrate disposed on a surface of the resin package and parallel to the circuit board; the metal substrate is provided with a plurality of conductive discs;
a circuit element encapsulated in the resin encapsulation and soldered to the first conductive pattern layer;
two opposite surfaces of the power device are respectively welded to the metal substrate and the circuit board; and the conductive pin of the first surface of the power device is welded to the second conductive pattern layer, and the second conductive pattern layer is electrically connected with the conductive disc through a metal support.
2. The power device module of claim 1, wherein: the second surface of the power device opposite to the first surface of the power device is provided with a conductive pin, and the conductive pin of the second surface of the power device is connected with the corresponding conductive pad in the metal substrate in a welding mode.
3. The power device module of claim 1, wherein: the second surface of the power device opposite to the first surface of the power device is provided with a heat conduction pin, the metal substrate is provided with a heat conduction plate, and the heat conduction pin is welded to the heat conduction plate.
4. The power device module of claim 1, wherein: the thickness of the metal substrate is 0.1 mm to 2 mm.
5. The power device module of claim 4, wherein: the metal substrate is a copper substrate with a thickness of 0.1 mm to 0.5 mm.
6. The power device module of claim 1, wherein: the metal supporting piece is a copper block or a copper column.
7. The power device module of claim 1, wherein: the metal support is connected with the second conductive pattern layer and the conductive pad in a welding mode.
8. The power device module of claim 1, wherein: the power device is an IGBT chip or an MOSFET chip.
9. The power device module of claim 1, wherein: the thickness of the first conductive pattern layer and the second conductive pattern layer is 30 micrometers to 100 micrometers; the circuit board also has a third conductive pattern layer disposed inside the insulating substrate thereof.
10. The power device module of claim 1, wherein: one of the two opposite surfaces of the power device, which generates a larger amount of heat, is soldered to the metal substrate.
CN201921390527.4U 2019-08-23 2019-08-23 Power device module Active CN210349819U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201921390527.4U CN210349819U (en) 2019-08-23 2019-08-23 Power device module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921390527.4U CN210349819U (en) 2019-08-23 2019-08-23 Power device module

Publications (1)

Publication Number Publication Date
CN210349819U true CN210349819U (en) 2020-04-17

Family

ID=70176218

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201921390527.4U Active CN210349819U (en) 2019-08-23 2019-08-23 Power device module

Country Status (1)

Country Link
CN (1) CN210349819U (en)

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