CN209056480U - A kind of ceramic copper-clad panel assembly applied to IGBT power module encapsulation - Google Patents

A kind of ceramic copper-clad panel assembly applied to IGBT power module encapsulation Download PDF

Info

Publication number
CN209056480U
CN209056480U CN201821488564.4U CN201821488564U CN209056480U CN 209056480 U CN209056480 U CN 209056480U CN 201821488564 U CN201821488564 U CN 201821488564U CN 209056480 U CN209056480 U CN 209056480U
Authority
CN
China
Prior art keywords
area
dbc board
dbc
chip
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201821488564.4U
Other languages
Chinese (zh)
Inventor
谌容
许海东
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bright Die Semiconductor Co Ltd In Nanjing
Original Assignee
Bright Die Semiconductor Co Ltd In Nanjing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bright Die Semiconductor Co Ltd In Nanjing filed Critical Bright Die Semiconductor Co Ltd In Nanjing
Priority to CN201821488564.4U priority Critical patent/CN209056480U/en
Application granted granted Critical
Publication of CN209056480U publication Critical patent/CN209056480U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5475Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/926Multiple bond pads having different sizes

Landscapes

  • Inverter Devices (AREA)

Abstract

本实用新型公开了一种应用于IGBT功率模块封装的陶瓷覆铜板装置,包含散热底板、DBC板、连桥、IGBT芯片和FWD芯片、铝线,所述散热底板的上方设置有DBC板,且DBC板的内侧安置有DBC板第一区域,所述DBC板第二区域固定于DBC板的内部,且DBC板的内侧设置有DBC板第三区域,所述连桥固定于DBC板第三区域的内部,所述DBC板的内部设置有阻焊框,且DBC板的内侧设置有DBC板第四区域。该应用于IGBT功率模块封装的DBC板装置有IGBT芯片,且DBC板第三区域与IGBT芯片、FWD芯片的连接方式为焊接,通过DBC板内侧的阻焊框的作用,能够对IGBT芯片、FWD芯片进行放置操作,并且通过锡膏对IGBT芯片、FWD芯片与DBC板进行焊接处理,增强两者之间的稳固性。

The utility model discloses a ceramic copper clad plate device applied to IGBT power module packaging, comprising a heat dissipation base plate, a DBC board, a connecting bridge, an IGBT chip, a FWD chip, and an aluminum wire. A DBC plate is arranged above the heat dissipation base plate, and The inner side of the DBC board is provided with the first area of the DBC board, the second area of the DBC board is fixed inside the DBC board, and the inner side of the DBC board is provided with the third area of the DBC board, and the bridge is fixed to the third area of the DBC board The inside of the DBC board is provided with a solder resist frame, and the inner side of the DBC board is provided with a fourth area of the DBC board. The DBC board device applied to the IGBT power module package has IGBT chips, and the third area of the DBC board is connected to the IGBT chip and the FWD chip by welding. The chip is placed, and the IGBT chip, the FWD chip and the DBC board are welded by solder paste to enhance the stability between the two.

Description

一种应用于IGBT功率模块封装的陶瓷覆铜板装置A ceramic copper clad laminate device applied to IGBT power module packaging

技术领域technical field

本实用新型涉及半导体功率器件封装装置技术领域,具体为一种应用于 IGBT功率模块封装的陶瓷覆铜板装置。The utility model relates to the technical field of semiconductor power device packaging devices, in particular to a ceramic copper clad plate device applied to the packaging of IGBT power modules.

背景技术Background technique

随着各个地区经济的飞速发展和科技的进步,IGBT模块是由IGBT(绝缘栅双极型晶体管芯片)与FWD(续流二极管芯片)通过特定的电路桥接封装而成的模块化半导体产品,封装后的IGBT模块直接应用于变频器、UPS不间断电源等设备上;With the rapid development of economy and the advancement of science and technology in various regions, IGBT modules are modular semiconductor products that are packaged by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) through a specific circuit bridge. The latter IGBT module is directly applied to the inverter, UPS uninterruptible power supply and other equipment;

将IGBT芯片封装成模块过程中,一般使用陶瓷覆铜板(DBC板)实现绝缘、导热、焊接、导电等性能,DBC是由陶瓷基材、键合粘接层及导电层而构成,它是指铜箔在高温下直接键合到氧化铝或氮化铝陶瓷基片表面上的特殊工艺方法,其具有高导热特性,高的附着强度,优异的软钎焊性和优良电绝缘性能。In the process of encapsulating IGBT chips into modules, ceramic copper clad laminates (DBC boards) are generally used to achieve insulation, thermal conductivity, welding, electrical conductivity and other properties. DBC is composed of ceramic substrates, bonding layers and conductive layers. A special process method in which copper foil is directly bonded to the surface of alumina or aluminum nitride ceramic substrate at high temperature, which has high thermal conductivity, high adhesion strength, excellent solderability and excellent electrical insulation properties.

市场上的应用于IGBT功率模块封装的陶瓷覆铜板装置在进行工作时,封装良率和封装效率较低,容易出现静电击穿IGBT模块现象,给封装进行工作带来不便,并且难以减小电路回路中的耦合、杂散的电感与电容,使得模块的可靠性降低,为此,我们提出一种应用于IGBT功率模块封装的陶瓷覆铜板装置。When the ceramic CCL devices on the market for IGBT power module packaging work, the packaging yield and packaging efficiency are low, and the phenomenon of electrostatic breakdown of the IGBT module is prone to occur, which brings inconvenience to the packaging work and is difficult to reduce the circuit. Coupling, stray inductance and capacitance in the loop reduce the reliability of the module. For this reason, we propose a ceramic CCL device for IGBT power module packaging.

实用新型内容Utility model content

本实用新型的目的在于提供一种应用于IGBT功率模块封装的陶瓷覆铜板装置,以解决上述背景技术中提出的封装装置在进行工作时,封装良率和封装效率较低,容易出现静电击穿IGBT模块现象,给装置进行工作带来不便,并且难以减小电路回路中的耦合、杂散的电感与电容,使得模块的可靠性降低的问题。The purpose of the present utility model is to provide a ceramic copper clad laminate device applied to IGBT power module packaging, so as to solve the problem that the packaging device proposed in the above-mentioned background technology has low packaging yield and packaging efficiency, and is prone to electrostatic breakdown during operation. The IGBT module phenomenon brings inconvenience to the operation of the device, and it is difficult to reduce the coupling, stray inductance and capacitance in the circuit loop, which reduces the reliability of the module.

为实现上述目的,本实用新型提供如下技术方案:一种应用于IGBT功率模块封装的陶瓷覆铜板装置,包含散热底板、DBC板、连桥、IGBT芯片和FWD 芯片、铝线,所述散热底板的上方设置有DBC板,且DBC板的内侧安置有DBC 板第一区域,所述DBC板第二区域固定于DBC板的内部,且DBC板的内侧设置有DBC板第三区域,所述连桥固定于DBC板第三区域的内部,所述DBC板的内部设置有阻焊框,且DBC板的内侧设置有DBC板第四区域,所述IGBT芯片和FWD芯片安置于DBC板第三区域的内部,且IGBT芯片的边缘设置有绝缘环,所述铝线固定于IGBT芯片和DBC板上。In order to achieve the above purpose, the present invention provides the following technical solutions: a ceramic copper clad laminate device applied to IGBT power module packaging, comprising a heat dissipation base plate, a DBC board, a bridge, an IGBT chip, a FWD chip, and an aluminum wire, and the heat dissipation base plate A DBC board is arranged on the top of the board, and the first area of the DBC board is arranged on the inner side of the DBC board, the second area of the DBC board is fixed on the inside of the DBC board, and the inner side of the DBC board is provided with a third area of the DBC board. The bridge is fixed inside the third area of the DBC board, the inside of the DBC board is provided with a solder mask, and the inside of the DBC board is provided with the fourth area of the DBC board, and the IGBT chip and the FWD chip are arranged in the third area of the DBC board. The inside of the IGBT chip is provided with an insulating ring, and the aluminum wire is fixed on the IGBT chip and the DBC board.

优选的,所述DBC板第四区域表面形状呈“L”形,通过铝线将芯片E极引到DBC板第四区域的E极键合区,其连接方式为键合,E极焊接区连接电极,其连接方式为焊接。Preferably, the surface shape of the fourth area of the DBC board is an "L" shape, and the E pole of the chip is led to the E pole bonding area of the fourth area of the DBC board through an aluminum wire, and the connection method is bonding, E pole welding area Connect the electrodes, and the connection method is welding.

优选的,所述通过DBC板内侧的阻焊框的作用,能够对IGBT芯片、FWD 芯片进行放置操作。Preferably, the IGBT chip and the FWD chip can be placed by the action of the solder resist frame on the inner side of the DBC board.

优选的,所述DBC板第一区域和DBC板第二区域表面形状呈“U”形,便于GE控制极的铝线键合,且提高了信号线和DBC的焊接良率,且区域面积较小,在一定程度上减小了电路回路中的耦合、杂散的电感与电容,并且在G 极键合区和E极键合区用铝线连接,可有效防止静电击穿,提高封装良率和产品可靠性。Preferably, the surface shapes of the first area of the DBC board and the second area of the DBC board are in a "U" shape, which is convenient for the aluminum wire bonding of the GE control electrode, and improves the welding yield of the signal line and the DBC, and the area is relatively small. Small, to a certain extent, the coupling, stray inductance and capacitance in the circuit loop are reduced, and aluminum wires are used to connect the G-pole bonding area and the E-pole bonding area, which can effectively prevent electrostatic breakdown and improve the packaging quality. rate and product reliability.

优选的,所述个相同布局的DBC板用在同一模块上,可降低物料管理难度,且在印刷、贴片、键合等工艺中能有效降低作业难度,提高生产效率和生产良率。Preferably, the DBC boards with the same layout are used on the same module, which can reduce the difficulty of material management, and can effectively reduce the difficulty of operation in processes such as printing, patching, and bonding, and improve production efficiency and production yield.

优选的,所述绝缘环的截面面积小于IGBT芯片的截面面积,且绝缘环的外侧与IGBT芯片的内壁相贴合。Preferably, the cross-sectional area of the insulating ring is smaller than the cross-sectional area of the IGBT chip, and the outer side of the insulating ring is in contact with the inner wall of the IGBT chip.

与现有技术相比,本实用新型的有益效果是:该应用于IGBT功率模块封装的陶瓷覆铜板装置设置有IGBT芯片,且DBC板第三区域与IGBT芯片的连接方式为焊接,通过DBC板内侧的阻焊框的作用,能够对IGBT芯片进行放置操作,并且通过锡膏对IGBT芯片与DBC板进行焊接处理,增强两者之间的稳固性,同时,DBC板第一区域和第二区域表面形状呈“U”形,便于GE控制极的铝线键合,提高了信号线和DBC的焊接良率,且区域面积较小,在一定程度上减小了电路回路中的耦合、杂散的电感与电容,而2个相同布局的DBC 板用在同一模块上,可降低物料管理难度,且在印刷、贴片、键合等工艺中能有效降低作业难度,提高生产效率和生产良率,而在G极键合区和E极键合区用铝线连接,可有效防止静电击穿,提高封装良率和产品可靠性,以及绝缘环的截面面积小于IGBT芯片的截面面积,通过绝缘环的作用,能够有效的辅助IGBT芯片上的G极和E极之间的铝线键合,避免IGBT芯片被静电击穿,增强IGBT芯片的工作性能。Compared with the prior art, the beneficial effect of the present invention is that: the ceramic copper clad plate device applied to the IGBT power module package is provided with an IGBT chip, and the connection method between the third region of the DBC board and the IGBT chip is welding, and the connection between the third area of the DBC board and the IGBT chip is through welding. The role of the inner solder mask can place the IGBT chip, and solder the IGBT chip and the DBC board through solder paste to enhance the stability between the two. At the same time, the first area and the second area of the DBC board are The surface shape is "U" shape, which is convenient for aluminum wire bonding of GE control electrodes, improves the welding yield of signal lines and DBC, and has a small area, which reduces the coupling and stray in the circuit loop to a certain extent. Inductance and capacitance, and two DBC boards with the same layout are used on the same module, which can reduce the difficulty of material management, and can effectively reduce the difficulty of work in printing, patch, bonding and other processes, and improve production efficiency and production yield , and the G-pole bonding area and the E-pole bonding area are connected with aluminum wires, which can effectively prevent electrostatic breakdown, improve packaging yield and product reliability, and the cross-sectional area of the insulating ring is smaller than that of the IGBT chip. The role of the ring can effectively assist the aluminum wire bonding between the G pole and the E pole on the IGBT chip, prevent the IGBT chip from being electrostatically broken down, and enhance the working performance of the IGBT chip.

附图说明Description of drawings

图1为本实用新型装置示意图;1 is a schematic diagram of the utility model device;

图2为本实用新型散热底板内部结构示意图;2 is a schematic diagram of the internal structure of the heat dissipation base plate of the present invention;

图3为本实用新型IGBT芯片与绝缘环连接结构示意图。FIG. 3 is a schematic diagram of the connection structure between the IGBT chip and the insulating ring of the present invention.

图中:1、DBC板第一区域,2、DBC板第二区域,3、DBC板第三区域,4、 DBC板第四区域,5、阻焊框,6、C极芯片焊接区,7、C极电极焊接区,8、E 极焊接区,9、E极键合区,10、散热底板,11、DBC板,12、IGBT芯片,13、连桥,14、铝线,15、绝缘环,16、FWD芯片。In the figure: 1. The first area of the DBC board, 2. The second area of the DBC board, 3. The third area of the DBC board, 4. The fourth area of the DBC board, 5. The solder mask frame, 6, The C pole chip bonding area, 7 , C pole electrode welding area, 8, E pole welding area, 9, E pole bonding area, 10, heat dissipation base plate, 11, DBC board, 12, IGBT chip, 13, connecting bridge, 14, aluminum wire, 15, insulation Ring, 16, FWD chip.

具体实施方式Detailed ways

下面将结合本实用新型实施例中的附图,对本实用新型实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本实用新型一部分实施例,而不是全部的实施例。基于本实用新型中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本实用新型保护的范围。The technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the implementations. example. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention.

请参阅图1-3,本实用新型提供一种技术方案:一种应用于IGBT功率模块封装的陶瓷覆铜板装置,包含散热底板10、DBC板11、连桥13、IGBT芯片 12和FWD芯片16、铝线14,散热底板10的上方设置有DBC板11,且DBC板 11的内侧安置有DBC板第一区域1,DBC板第一区域1和DBC板第二区域2表面形状呈“U”形,便于GE控制极的铝线14键合,且提高了信号线和DBC板 11的焊接良率,且区域面积较小,在一定程度上减小了电路回路中的耦合、杂散的电感与电容,并且在G极键合区和E极键合区9用铝线14连接,可有效防止静电击穿,提高封装良率和产品可靠性,2个相同布局的DBC板11用在同一模块上,可降低物料管理难度,且在印刷、贴片、键合等工艺中能有效降低作业难度,提高生产效率和生产良率,DBC板第二区域2固定于DBC板 11的内部,且DBC板11的内侧设置有DBC板第三区域3,DBC板第三区域3 的内侧设置有C极芯片焊接区域6和C极电极焊接区域7,连桥13固定于DBC 板第三区域3的内部,DBC板11的内部设置有阻焊框5,且DBC板11的内侧设置有DBC板第四区域4,DBC板第四区域4表面形状呈“L”形,通过铝线 14将芯片E极引到DBC板第四区域4的E极键合区9,其连接方式为键合,E 极焊接区8连接电极,其连接方式为焊接,通过DBC板11内侧的阻焊框5的作用,能够对IGBT芯片12进行放置操作,并且通过锡膏对IGBT芯片12与 DBC板11进行焊接处理,增强两者之间的稳固性,DBC板第四区域4内侧设置有E极焊接区8和E极键合区9,IGBT芯片12和FWD芯片16安置于DBC 板第三区域3的内部,且IGBT芯片12的边缘设置有绝缘环15,绝缘环15的截面面积小于IGBT芯片12的截面面积,且绝缘环15的外侧与IGBT芯片12 的内壁相贴合,通过绝缘环15的作用,能够有效的辅助IGBT芯片12上的G 极和E极之间的铝线14键合,避免IGBT芯片12被静电击穿,增强IGBT芯片12的工作性能,铝线14固定于IGBT芯片12和DBC板11上。Please refer to FIGS. 1-3 , the present utility model provides a technical solution: a ceramic copper clad laminate device for IGBT power module packaging, comprising a heat dissipation base plate 10 , a DBC board 11 , a bridge 13 , an IGBT chip 12 and a FWD chip 16 , aluminum wire 14, a DBC board 11 is arranged above the heat dissipation bottom plate 10, and the inner side of the DBC board 11 is arranged with the first area 1 of the DBC board, the first area 1 of the DBC board and the second area 2 of the DBC board The surface shape is "U" The shape is convenient for the bonding of the aluminum wire 14 of the GE control electrode, and the welding yield of the signal wire and the DBC board 11 is improved, and the area is small, which reduces the coupling and stray inductance in the circuit loop to a certain extent. It is connected with the capacitor, and the G-pole bonding area and the E-pole bonding area 9 are connected with aluminum wires 14, which can effectively prevent electrostatic breakdown, improve the packaging yield and product reliability. Two DBC boards 11 with the same layout are used in the same On the module, it can reduce the difficulty of material management, and can effectively reduce the difficulty of operation in printing, patch, bonding and other processes, improve production efficiency and production yield, the second area 2 of the DBC board is fixed inside the DBC board 11, and The inner side of the DBC board 11 is provided with a third region 3 of the DBC board, the inner side of the third region 3 of the DBC board is provided with a C-pole chip welding region 6 and a C-pole electrode welding region 7, and the bridge 13 is fixed to the third region 3 of the DBC board. Inside, the solder resist frame 5 is arranged inside the DBC board 11 , and the fourth area 4 of the DBC board is arranged on the inner side of the DBC board 11 . The pole is led to the E pole bonding area 9 of the fourth area 4 of the DBC board, and its connection method is bonding, and the E pole welding area 8 is connected to the electrode, and its connection method is welding, through the action of the solder mask 5 inside the DBC board 11 , the IGBT chip 12 can be placed, and the IGBT chip 12 and the DBC board 11 can be soldered by solder paste to enhance the stability between the two. The inner side of the fourth area 4 of the DBC board is provided with E-pole welding area 8 and The E-pole bonding area 9, the IGBT chip 12 and the FWD chip 16 are arranged inside the third area 3 of the DBC board, and the edge of the IGBT chip 12 is provided with an insulating ring 15, and the cross-sectional area of the insulating ring 15 is smaller than that of the IGBT chip 12. , and the outer side of the insulating ring 15 is in contact with the inner wall of the IGBT chip 12. The function of the insulating ring 15 can effectively assist the bonding of the aluminum wire 14 between the G pole and the E pole on the IGBT chip 12 to avoid the IGBT chip. 12 is broken down by static electricity to enhance the working performance of the IGBT chip 12 , and the aluminum wire 14 is fixed on the IGBT chip 12 and the DBC board 11 .

工作原理:对于这类的应用于IGBT功率模块封装的陶瓷覆铜板装置首先通过锡膏对IGBT芯片12与DBC板11进行焊接处理,增强两者之间的稳固性,并且通过绝缘环15的作用,能够有效的辅助IGBT芯片12上的G极与E极通过铝线14进行键合操作,DBC板第一区域1和DBC板第二区域2表面形状呈“U”形,便于GE控制极的铝线14键合,且提高了信号线和DBC板11的焊接良率,且区域面积较小,在一定程度上减小了电路回路中的耦合、杂散的电感与电容,并且在G极键合区和E极键合区9用铝线14连接,可有效防止静电击穿,提高封装良率和产品可靠性,2个相同布局的DBC板11用在同一模块上,可降低物料管理难度,且在印刷、贴片、键合等工艺中能有效降低作业难度,提高生产效率和生产良率。Working principle: For this type of ceramic CCL device used in IGBT power module packaging, the IGBT chip 12 and the DBC board 11 are first welded with solder paste to enhance the stability between the two, and through the role of the insulating ring 15 , which can effectively assist the G pole and E pole on the IGBT chip 12 to perform the bonding operation through the aluminum wire 14. The first area 1 of the DBC board and the second area 2 of the DBC board have a "U" shape, which is convenient for the GE control pole. The aluminum wire 14 is bonded, and the welding yield of the signal wire and the DBC board 11 is improved, and the area is small, which reduces the coupling, stray inductance and capacitance in the circuit loop to a certain extent, and the G pole The bonding area and the E-pole bonding area 9 are connected by aluminum wires 14, which can effectively prevent electrostatic breakdown, improve the packaging yield and product reliability. Two DBC boards 11 with the same layout are used on the same module, which can reduce material management. Difficulty, and can effectively reduce the difficulty of operation in printing, patch, bonding and other processes, improve production efficiency and production yield.

尽管已经示出和描述了本实用新型的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本实用新型的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本实用新型的范围由所附权利要求及其等同物限定。Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes and modifications can be made to these embodiments without departing from the principles and spirit of the present invention , alternatives and modifications, the scope of the present invention is defined by the appended claims and their equivalents.

Claims (6)

1.一种应用于IGBT功率模块封装的陶瓷覆铜板装置,包含散热底板(10)、DBC板(11)、连桥(13)、IGBT芯片(12)和FWD芯片(16)、铝线(14),其特征在于,所述散热底板(10)的上方设置有DBC板(11),且DBC板(11)的内侧安置有DBC板第一区域(1),所述DBC板第二区域(2)固定于DBC板(11)的内部,且DBC板(11)的内侧设置有DBC板第三区域(3),所述DBC板第三区域(3)的内侧设置有C极芯片焊接区域(6)和C极电极焊接区域(7),所述连桥(13)固定于DBC板第三区域(3)的内部,所述DBC板(11)的内部设置有阻焊框(5),且DBC板(11)的内侧设置有DBC板第四区域(4),所述DBC板第四区域(4)内侧设置有E极焊接区(8)和E极键合区(9),所述IGBT芯片(12)和FWD芯片(16)安置于DBC板第三区域(3)的内部,且IGBT芯片(12)的边缘设置有绝缘环(15),所述铝线(14)固定于IGBT芯片(12)和DBC板(11)上。1. A ceramic copper clad laminate device applied to IGBT power module packaging, comprising a heat dissipation base plate (10), a DBC board (11), a connecting bridge (13), an IGBT chip (12), an FWD chip (16), an aluminum wire ( 14), characterized in that a DBC board (11) is arranged above the heat dissipation base plate (10), and a first area (1) of the DBC board is arranged on the inner side of the DBC board (11), and a second area of the DBC board is arranged (2) It is fixed inside the DBC board (11), and the inner side of the DBC board (11) is provided with a third region (3) of the DBC board, and the inner side of the third region (3) of the DBC board is provided with a C-pole chip welding area (6) and C-pole electrode welding area (7), the bridge (13) is fixed inside the third area (3) of the DBC board, and the inside of the DBC board (11) is provided with a solder resist frame (5). ), and the inner side of the DBC board (11) is provided with a fourth region (4) of the DBC board, and the inner side of the fourth region (4) of the DBC board is provided with an E-pole welding area (8) and an E-pole bonding area (9) , the IGBT chip (12) and the FWD chip (16) are arranged inside the third area (3) of the DBC board, and the edge of the IGBT chip (12) is provided with an insulating ring (15), the aluminum wire (14) It is fixed on the IGBT chip (12) and the DBC board (11). 2.根据权利要求1所述的一种应用于IGBT功率模块封装的陶瓷覆铜板装置,其特征在于DBC板第四区域(4)表面形状呈“L”形,通过铝线(14)将芯片E极引到DBC板第四区域(4)的E极键合区(9),其连接方式为键合,E极焊接区(8)连接电极,其连接方式为焊接。2. A ceramic copper clad laminate device for IGBT power module packaging according to claim 1, characterized in that the surface shape of the fourth region (4) of the DBC board is "L" shape, and the chip is connected by aluminum wires (14). The E pole is led to the E pole bonding area (9) of the fourth area (4) of the DBC board, and the connection method is bonding, and the E pole welding area (8) is connected to the electrode, and the connection method is welding. 3.根据权利要求1所述的一种应用于IGBT功率模块封装的陶瓷覆铜板装置,其特征在于通过DBC板(11)内侧的阻焊框(5)的作用,能够对IGBT芯片(12)、FWD芯片(16)进行放置操作。3. A ceramic copper clad laminate device applied to IGBT power module packaging according to claim 1, characterized in that through the action of the solder resist frame (5) inside the DBC board (11), the IGBT chip (12) , the FWD chip (16) performs a placement operation. 4.根据权利要求1所述的一种应用于IGBT功率模块封装的陶瓷覆铜板装置,其特征在于DBC板第一区域(1)和DBC板第二区域(2)表面形状呈“U”形,便于GE控制极的铝线(14)键合,且提高了信号线和DBC的焊接良率,且区域面积较小,在一定程度上减小了电路回路中的耦合、杂散的电感与电容,并且在G极键合区和E极键合区(9)用铝线(14)连接,可有效防止静电击穿,提高封装良率和产品可靠性。4. A ceramic copper clad laminate device for IGBT power module packaging according to claim 1, characterized in that the surface shape of the first area (1) of the DBC board and the second area (2) of the DBC board is "U" shape , to facilitate the bonding of the aluminum wire (14) of the GE control pole, and improve the welding yield of the signal wire and DBC, and the area is small, which reduces the coupling in the circuit loop, stray inductance and Capacitance, and the G-pole bonding area and the E-pole bonding area (9) are connected with an aluminum wire (14), which can effectively prevent electrostatic breakdown and improve the packaging yield and product reliability. 5.根据权利要求1所述的一种应用于IGBT功率模块封装的陶瓷覆铜板装置,其特征在于2个相同布局的DBC板(11)用在同一模块上,可降低物料管理难度,且在印刷、贴片、键合等工艺中能有效降低作业难度,提高生产效率和生产良率。5. A ceramic copper clad laminate device for IGBT power module packaging according to claim 1, characterized in that two DBC boards (11) with the same layout are used on the same module, which can reduce the difficulty of material management, and Printing, patch, bonding and other processes can effectively reduce the difficulty of operation, improve production efficiency and production yield. 6.根据权利要求1所述的一种应用于IGBT功率模块封装的陶瓷覆铜板装置,其特征在于绝缘环(15)的截面面积小于IGBT芯片(12)的截面面积,且绝缘环(15)的外侧与IGBT芯片(12)的内壁相贴合。6. A ceramic copper clad laminate device applied to IGBT power module packaging according to claim 1, characterized in that the cross-sectional area of the insulating ring (15) is smaller than the cross-sectional area of the IGBT chip (12), and the insulating ring (15) The outer side of the IGBT chip is attached to the inner wall of the IGBT chip (12).
CN201821488564.4U 2018-09-12 2018-09-12 A kind of ceramic copper-clad panel assembly applied to IGBT power module encapsulation Active CN209056480U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821488564.4U CN209056480U (en) 2018-09-12 2018-09-12 A kind of ceramic copper-clad panel assembly applied to IGBT power module encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821488564.4U CN209056480U (en) 2018-09-12 2018-09-12 A kind of ceramic copper-clad panel assembly applied to IGBT power module encapsulation

Publications (1)

Publication Number Publication Date
CN209056480U true CN209056480U (en) 2019-07-02

Family

ID=67048688

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821488564.4U Active CN209056480U (en) 2018-09-12 2018-09-12 A kind of ceramic copper-clad panel assembly applied to IGBT power module encapsulation

Country Status (1)

Country Link
CN (1) CN209056480U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114754493A (en) * 2020-12-25 2022-07-15 杭州泰昕微电子有限公司 Induction heating integrated core of instant water treatment device
CN116721988A (en) * 2023-08-10 2023-09-08 烟台台芯电子科技有限公司 IGBT module and processing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114754493A (en) * 2020-12-25 2022-07-15 杭州泰昕微电子有限公司 Induction heating integrated core of instant water treatment device
CN116721988A (en) * 2023-08-10 2023-09-08 烟台台芯电子科技有限公司 IGBT module and processing method

Similar Documents

Publication Publication Date Title
US10943845B2 (en) Three-dimensional packaging structure and packaging method of power devices
CN105914185B (en) A kind of encapsulating structure and packaging method of silicon carbide power device
CN107591377B (en) A multi-DBC packaging structure and packaging method for power devices
CN102593108B (en) Power semiconductor packaging structure and manufacturing method thereof
CN205004324U (en) An intelligent power module chip
CN102931174B (en) Miniature type surface mounting single-phase full-wave bridge rectifier and manufacturing method of rectifier
CN204481692U (en) Intelligent power module
CN104701268B (en) Spm
WO2022127060A1 (en) Power device packaging structure and power electronic device
CN107871734A (en) A kind of IGBT module
CN203607394U (en) Power integrated module
CN209389033U (en) A kind of middle power three-phase controlled rectification module
CN107507808A (en) A kind of New IGBT module encapsulation construction
CN121532006A (en) A common-drain module packaging structure with double-sided heat dissipation
CN103515370A (en) Power semiconductor package and manufacturing method thereof
CN103779343A (en) power semiconductor module
CN101982875A (en) Packaging structure of N substrate diode half bridges with common anodes in TO-220
CN104882427B (en) A kind of plastic sealed IPM modular electricals attachment structure
CN205680671U (en) Heat radiating fin structure Ultrathin surface-mount rectifier bridge device
CN202996833U (en) Compound packaged IGBT device
CN210575922U (en) Packaging structure of power semiconductor device
CN207233722U (en) A kind of New IGBT module encapsulation construction
CN206163472U (en) Insulated gate bipolar transistor
CN114709203A (en) Single-phase full-bridge intelligent power module based on gallium nitride power chip
CN207637790U (en) A kind of system integration intelligent power module

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant