JP2002095267A - Inverter device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To cool both surfaces of a plurality of semiconductor chips, improve cooling efficiency, reduce parasitic inductance of wiring, reduce over-voltage and a loss, improve capacity of current, and improve even reliability. SOLUTION: This inverter device is constituted by providing a plurality of semiconductor elements 2 for power, a drive circuit driving a plurality of the semiconductor elements 2 for power, and a control circuit 11 controlling a plurality of the semiconductor elements 2 for power. A first metal electrode 23 is connected to an upper part of a first insulating base board 22, a plurality of semiconductor chips 191, 201 are connected to an upper part of the first metal electrode 23, a thermal buffer plate 24 is connected to an upper part of a plurality of the semiconductor chips 191, 201, a second metal electrode 25 is connected to an upper part of the thermal buffer plate 24, and a second insulating base board 26 is connected to an upper part of the second metal electrode 25.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention comprises a plurality of power semiconductor elements, a drive circuit for driving the plurality of power semiconductor elements, and a control circuit for controlling the plurality of power semiconductor elements. In particular, the inverter device is small in size, has good cooling efficiency, and has a small wiring parasitic inductance.
The present invention relates to a highly reliable inverter device for an electric vehicle, for example.

[0002]

2. Description of the Related Art In recent years, for an inverter device applied to, for example, an electric vehicle, miniaturization and high reliability of the device have been required.

In this case, in order to reduce the size and increase the reliability of the inverter device, it is necessary to use an inverter device having good cooling efficiency and small parasitic inductance of wiring.

A conventional inverter device of this type will be described below with reference to FIGS.

FIG. 11 is a plan sectional view showing a configuration example of a conventional inverter device, FIG. 12 is a side sectional view showing a configuration example of a conventional inverter device, and FIG. 13 is an internal view showing a configuration example of a conventional power semiconductor device. It is a partial sectional view.

In FIG. 11 and FIG. 12, the inverter device is a power semiconductor element 2 attached to a bottom surface of an inverter device housing 1 by a mounting screw 3 and a power supply smoothing capacitor fixed to a fixing base 5. The control unit 11 includes an aluminum electrolytic capacitor 4, current detectors 101 to 102 for detecting currents of the three-phase output conductors 91 to 93, and a control unit 11.

[0007] The power semiconductor element 2 and the aluminum electrolytic capacitor 4 are electrically connected to the positive conductor 7 and the negative conductor 8 by connection screws 6.

A channel 15 is provided on the bottom surface of the inverter device housing 1, and the power semiconductor element 2 is cooled by the refrigerant 14 flowing inside the channel 15.

As the refrigerant 14, for example, antifreeze or the like can be used.

On the other hand, as shown in FIG. 13, the power semiconductor element 2 has an insulating substrate 17 above the heat dissipating metal plate 16, a metal electrode 18 above the insulating substrate 17, an IGBT 191 and a diode above the metal electrode 18. 201 are respectively laminated and joined.

The IGBT 191 and the diode 2
01, a metal electrode 18, and an insulating substrate 17 are housed in an insulating resin package.

Further, the heat dissipating metal plate 16 and the resin package are bonded at the ends.

An insulating gel is sealed inside the resin package.

Further, the external lead-out terminal and the IGBT 191
And the diode 201 are the wire bonding 21
Are electrically connected to each other.

Now, in the power semiconductor element 2 of the inverter device configured as described above, the IGBT 191
When the diode 201 is energized, a loss occurs.

In this case, an insulating gel, which is a heat insulating material, is sealed above the IGBT 191 and the diode 201.
Most of the loss generated in 1 is conducted to the lower metal electrode 18 by heat. Then, the loss thermally conducted to the metal electrode 18 is transmitted to the insulating substrate 17 and thermally conducted to the metal plate 16 for heat radiation.

The heat-dissipating metal plate 16 is brought into pressure contact with the bottom surface of the inverter device housing 1 by the mounting screw 3 as shown in FIG.

[0018]

However, the above-mentioned conventional inverter device has the following problems.

(A) IGBT 19
The loop of the current flowing to the external lead-out terminal via the first or diode 201 is wide, the parasitic inductance of the wiring inside the power semiconductor element 2 increases, and the occurrence of overvoltage and loss increase. Further, since the IGBT 191 and the diode 201 are electrically connected by the wire bonding 21, the resistance of the wire bonding 21 is large and the temperature rise is high, so that a predetermined conduction capacity cannot be secured.

(B) Since the heat-dissipating metal plate 16 is brought into press contact with the bottom surface of the inverter device housing 1 in which the flow path 15 is formed by the mounting screws 3 around the power semiconductor element 2, The pressing force is not uniformly applied to the entire heat dissipating metal plate 16. Therefore, the contact thermal resistance between the heat dissipating metal plate 16 and the inverter device housing 1 is very large, substantially equal to the thermal resistance inside the power semiconductor element 2, and the cooling efficiency is low.

(C) In addition to the problem (b), IGB
An insulating gel, which is a heat insulating material, is sealed above the T191 and the diode 201, and the generated loss can be radiated only from one side, so that the cooling efficiency is low. Therefore, it is not possible to cope with the improvement of the current carrying capacity of the inverter device. In addition, the size of the cooler and the like increases, and as a result, the inverter device also increases in size.

An object of the present invention is to provide an inverter device capable of reducing the internal inductance of a power semiconductor device and reducing overvoltage and loss.

Another object of the present invention is to provide an inverter device capable of improving the current-carrying capacity of a power semiconductor element and improving reliability.

Still another object of the present invention is to provide an inverter device capable of improving cooling efficiency, miniaturizing a power semiconductor element, and miniaturizing the entire device.

[0025]

According to an aspect of the present invention, a plurality of power semiconductor elements, a driving circuit for driving the plurality of power semiconductor elements, and a plurality of power semiconductor elements are provided. And a control circuit for controlling the power semiconductor element, wherein a first metal electrode is joined to an upper portion of the first insulating substrate, and a plurality of A semiconductor chip is joined, a heat buffer plate is joined to the top of the plurality of semiconductor chips, a second metal electrode is joined to the top of the heat buffer plate, and a second insulating material is joined to the top of the second metal electrode. The substrates are joined.

According to a second aspect of the present invention, in the inverter device according to the first aspect, the first metal electrode is a collector electrode, the second metal electrode is an emitter electrode, and the collector electrode is The outlet and the outlet of the emitter electrode are provided in the same direction, and the direction of the current flowing through the first metal electrode and the direction of the current flowing through the second metal electrode are opposed to each other.

According to a third aspect of the present invention, in the inverter device according to the first or second aspect, the material of the thermal buffer plate is similar to a plurality of semiconductor chips in linear expansion coefficient. , Mo, W, Cu-W,
A metal such as Cu-Mo is used.

According to a fourth aspect of the present invention, in the inverter device according to any one of the first to third aspects, the heat buffer plate includes:
A sufficient thickness is provided for extracting gates and current senses from a plurality of semiconductor chips by wire bonding.

Therefore, in the inverter device according to the first to fourth aspects of the present invention, the thermal buffer plate is joined to the upper part of the plurality of semiconductor chips, and the second metal electrode is joined to the upper part. By joining the second insulating substrate to the upper part, a plurality of semiconductor chips can be cooled on both sides while insulating, and the cooling efficiency can be improved.

The outlet for the collector electrode and the outlet for the emitter electrode are provided in the same direction, and the direction of the current flowing through the first metal electrode as the collector electrode and the direction of the current flowing through the second metal electrode as the emitter electrode are provided. By opposing the direction of the current, the inductance is canceled, the parasitic inductance of the wiring can be extremely reduced, and the overvoltage and the loss can be reduced.

Further, by connecting a plurality of semiconductor chips by the first metal electrode, the thermal buffer plate and the second metal electrode, the resistance is lower and the temperature is lower than in the case where the semiconductor chips are connected by wire bonding. The rise is also reduced, the current carrying capacity is improved, and the reliability can be improved.

As described above, it is possible to cool a plurality of semiconductor chips on both sides, thereby improving the cooling efficiency, further reducing the parasitic inductance of the wiring, reducing the overvoltage and loss, and reducing the current carrying capacity. And reliability can be improved.

On the other hand, according to a fifth aspect of the present invention, in the inverter device according to any one of the first to fourth aspects, a refrigerant having a hollow inside is provided below the first insulating substrate. A first liquid-cooled cooler through which the heat sink passes is joined, and a second liquid-cooled cooler whose inside is hollow and through which a refrigerant passes is joined to the upper part of the second insulating substrate to cool a plurality of semiconductor chips on both sides. ing.

According to a sixth aspect of the present invention, in the inverter device according to the fifth aspect, the first and second liquid-cooled coolers are made of Al-S
It is a metal-based composite material that is a composite material of a metal such as iC or Cu-SiC and a ceramic.

Therefore, in the inverter device according to the fifth and sixth aspects of the present invention, the plurality of semiconductor chips are joined to the first liquid-cooled cooler and the second liquid-cooled cooler, In addition, by performing the double-sided cooling, in addition to providing the same operation as the inverter device according to the first to fourth aspects of the present invention, in addition to the contact heat between the above-described conventional inverter device and the cooler. Resistance is eliminated, cooling on both sides is possible, and thermal resistance is reduced by half, so that cooling efficiency can be further improved.

As described above, the contact thermal resistance is eliminated, and the cooling efficiency can be further improved.

According to a seventh aspect of the present invention, in the inverter device according to the fifth aspect,
The material of the first and second liquid-cooled coolers is a metal such as copper and aluminum, and the surface of the first and second liquid-cooled coolers is substantially equal to the first and second insulating substrates. Thermal stress buffer plate made of a metal matrix composite material such as Al-SiC, Cu-SiC or the like, or a metal heat such as Mo, W, which has a linear expansion coefficient similar to that of the first and second insulating substrates. The stress buffer plate is joined and joined to the first and second insulating substrates.

Therefore, in the inverter device according to the present invention, the first insulating substrate and the second insulating substrate are connected to the first liquid-cooled cooler and the second liquid-cooled cooler. By joining a thermal stress buffer plate having a linear expansion coefficient intermediate between the two, the same effects as those of the inverter device according to the first to sixth aspects of the invention can be obtained. Even if the material of the liquid-cooled cooler and the second liquid-cooled cooler is a metal having a large linear expansion coefficient, such as copper or aluminum, cracks due to thermal stress of the first insulating substrate and the second insulating substrate can be prevented. Can be prevented. Thereby, the materials of the first liquid-cooled cooler and the second liquid-cooled cooler are
Metals such as copper and aluminum that have higher thermal conductivity than metal-based composite materials, can be processed more complicatedly, can process fins that are various means for expanding the heat transfer area, and are less likely to break than metal-based composite materials Therefore, cooling efficiency can be further improved, manufacturing can be facilitated, and reliability can be improved. Further, since the thermal resistance from the junction to the cooling water per chip is almost halved as compared with the above-described conventional inverter device, the cooling efficiency and reliability can be further improved, and the inverter device can be simplified. .

As described above, the contact thermal resistance is eliminated, and the cooling efficiency can be further improved.

On the other hand, according to an eighth aspect of the present invention, in the inverter device according to any one of the first to seventh aspects, a plurality of semiconductor chips constituting the upper arm of the three-phase inverter are provided. A plurality of semiconductor chips joined to the first insulating substrate and the second insulating substrate via a thermal buffer plate and forming a lower arm of the three-phase inverter;
A first insulating substrate which is joined to the third insulating substrate and the fourth insulating substrate via a thermal buffer plate to form an upper arm of the three-phase inverter;
And the second insulating substrate and the third and fourth insulating substrates forming the lower arm of the three-phase inverter are joined to the first liquid-cooled cooler at a fixed distance, and First and second insulating substrates forming an upper arm;
Third and fourth parts constituting the lower arm of the three-phase inverter
A laminated substrate in which a positive-side conductor connected to the positive side of the DC power supply, a negative-side conductor connected to the negative side, and a three-phase output conductor are laminated via an insulator between A second liquid-cooled cooler is joined to the upper portions of the insulating substrate and the fourth insulating substrate.

According to a ninth aspect of the present invention, in the inverter device according to the eighth aspect of the present invention, the gate and the sense are formed by the first and second liquid-cooled coolers from a plurality of semiconductor chips. Substantially parallel, the first and second
From the outer peripheral space formed between the liquid-cooled coolers.

Further, in the invention according to claim 10,
In the inverter device according to the present invention, the second liquid-cooled cooler is divided into two, joined to the second insulating substrate and the fourth insulating substrate, respectively, and divided into two. The three-phase output conductor is taken out from between the second liquid-cooled coolers.

Therefore, in the inverter device according to the present invention, the plurality of semiconductor chips constituting the upper arm of the three-phase inverter are formed by the first and second insulating substrates and the heat buffer plate. A plurality of semiconductor chips that form a lower arm and are bonded to each other via a thermal buffer plate to form a lower arm; and a first and a second insulating substrate that form an upper arm. The third and fourth insulating substrates forming the lower arm are joined to the first liquid-cooled cooler at a predetermined distance from each other, and the first and second insulating substrates forming the upper arm are connected to the lower and upper insulating substrates. 3rd side arm
And a fourth insulating substrate, a laminated substrate in which a positive conductor connected to the positive electrode of the DC power supply, a negative conductor connected to the negative electrode, and a three-phase output conductor are laminated via an insulator. By joining a second liquid-cooled cooler to the upper portions of the second and fourth insulating substrates, the same effect as that of the inverter device according to the first to seventh aspects of the invention can be obtained. In addition, even if multiple semiconductor chips are cooled on both sides,
A three-phase inverter can be configured with a simple structure in which the parasitic inductance of the wiring is small.

[0044]

Embodiments of the present invention will be described below in detail with reference to the drawings.

(First Embodiment: Corresponding to Claims 1 to 4) FIG. 1 is a partial vertical sectional view showing an example of a mounting structure of a semiconductor chip in an inverter device according to this embodiment.
2 is a sectional view taken along line AA in FIG. 1, and FIG. 3 is a sectional view taken along line BB in FIG.

1 to 3, the first insulating substrate 2
The first metal electrode 23 is joined to the upper part of the second metal electrode 23.

The IGBT 191 as a semiconductor chip and the diode 20 are provided above the first metal electrode 23.
1 are joined by high-temperature solder.

Further, a thermal buffer plate 24 is joined to the upper part of the IGBT 191 and the diode 201 by high-temperature solder.

A second metal electrode 25 is joined to the upper part of the thermal buffer plate 24 by high-temperature solder.

Further, on the upper part of the second metal electrode 25,
The second insulating substrate 26 is joined.

In FIGS. 1 to 3, the IGBT 191 is used.
The diode 201 has a three-parallel configuration.

On the other hand, the first metal electrode 22 is used as a collector electrode, the second metal electrode 25 is used as an emitter electrode, and a collector electrode outlet 27 and an emitter electrode outlet 28 are provided in the same direction.

The material of the thermal buffer plate 24 is a semiconductor chip such as the IGBT 191 and the diode 201.
And the coefficient of linear expansion approximated, for example, Mo, W, Cu-W,
A metal such as Cu-Mo is used.

Further, the thermal buffer plate 24 has a sufficient thickness for drawing out the gate wire bonding 29 and the current sense wire bonding 31 from the IGBT 191 which is a semiconductor chip.

Next, in the inverter device according to the present embodiment configured as described above, the thermal buffer plate 24 is joined to the upper part of the IGBT 191 and the FRD 201, and the second metal electrode 25 is joined to the upper part. Since the second insulating substrate 26 is joined to the upper part, I
The GBT 191 and the FRD 201 can be cooled on both sides while insulating.

The IGBT 191 and the diode 2
01 is connected by wiring through the first metal electrode 22, the heat buffer plate 24, and the second metal electrode 25, so that the resistance is lower and the temperature rise is lower than when connected by wire bonding. Thus, the current carrying capacity can be improved, and the reliability can be improved.

Further, the outlet 27 for the collector electrode and the outlet 28 for the emitter electrode are provided in the same direction, and the direction of the current flowing through the first metal electrode 23 which is the collector electrode and the second direction which is the emitter electrode Since the direction of the current flowing through the metal electrode 25 is opposed, the inductance is cancelled, and the parasitic inductance of the wiring can be extremely reduced.

As described above, in the inverter device according to the present embodiment, IGBT 191 and diode 20
1 can be cooled on both sides, improving cooling efficiency, and further reducing parasitic inductance of wiring, reducing overvoltage and loss, improving current carrying capacity, and improving reliability. Becomes possible.

(Second Embodiment: Claims 5 and 6)
FIG. 4 is a partial vertical cross-sectional view showing a configuration example of the inverter device according to the present embodiment. The same reference numerals are given to the same portions as those in FIGS. 1 to 3 and the description is omitted. Only the different parts will be described.

In FIG. 4, a first liquid-cooled cooler 33 having a hollow inside and through which a refrigerant passes is provided below the first insulating substrate 22.
Are joined by low-temperature solder.

A second liquid-cooled cooler 34 having a hollow inside and through which a refrigerant passes is joined to the upper portion of the second insulating substrate 26 by low-temperature solder.

Thus, the semiconductor chip IGBT
191 and the diode 201 are cooled on both sides.

The material of the first liquid-cooled cooler 33 and the second liquid-cooled cooler 34 is, for example, Al-S
It is a metal-based composite material that is a composite material of a metal such as iC or Cu-SiC and a ceramic.

Next, in the inverter device according to the present embodiment configured as described above, the same functions and effects as those of the inverter device according to the above-described first embodiment can be obtained.

Further, in addition to the above, the IGBT 191 and the diode 201, the first liquid-cooled cooler 33 and the second liquid-cooled cooler 34 are joined, and both sides are cooled. This eliminates the contact thermal resistance with the cooler as in the conventional inverter device, further enables double-sided cooling, reduces the thermal resistance by half, and can further improve the cooling efficiency.

As described above, in the inverter device according to the present embodiment, the contact thermal resistance is eliminated, and the cooling efficiency can be further improved.

(Third Embodiment: Corresponding to Claim 7) FIG. 5 is a partial longitudinal sectional view showing a configuration example of an inverter device according to the present embodiment, and the same parts as those in FIGS. The same reference numerals are given and the description is omitted, and only different portions will be described here.

In FIG. 5, the material of the first liquid-cooled cooler 33 and the second liquid-cooled cooler 34 is a metal such as copper or aluminum.

The first liquid-cooled cooler 33 and the second
The surface of the liquid-cooled cooler 34 is provided with the first insulating substrate 2
The thermal stress buffer plate 35 having a shape substantially equal to that of the second and second insulating substrates 26 and made of, for example, a metal-based composite material such as Al-SiC or Cu-SiC, or the first insulating substrate 22 and the second insulating substrate The insulating substrate 26 is joined to a thermal stress buffer plate 35 made of a metal such as Mo or W having a similar coefficient of thermal expansion, and the first insulating substrate 22 and the second insulating substrate 2 are joined together.
6.

On the other hand, the manufacturing method is as follows.
The liquid-cooled cooler 33 and the second liquid-cooled cooler 34 are manufactured.

Next, the first metal electrode 23, the IGBT 191 and the diode 201 as the semiconductor chip, the heat buffer plate 24, and the second metal electrode 26 are, for example,
It is joined by a high-temperature solder of about 0 ° C.

Finally, the first liquid-cooled cooler 33, the thermal stress buffer plate 35, the first insulating substrate 22, and the second insulating substrate 26, and the second liquid-cooled cooler 34 are laminated. For example, by using low-temperature solder of about 180 ° C. to 200 ° C., the thermal stress buffer 35 is
A method of soldering with Nos. 2 and 26 is conceivable.

The first liquid-cooled cooler 33 and the second
If the material of the liquid-cooled cooler 34 is, for example, Al and the material of the thermal stress buffer plate 35 is, for example, Al-SiC, SiC
Can be conceived integrally with a cooler by casting Al.

Next, in the inverter device according to the present embodiment configured as described above, the same functions and effects as those of the inverter devices according to the above-described first and second embodiments can be obtained.

Further, in addition to this, the first insulating substrate 2
2nd and 2nd insulating substrate 26 and 1st liquid cooling type cooler 33
A thermal stress buffer plate 35 having an intermediate linear expansion coefficient is joined between the first liquid-cooled cooler 33 and the second liquid-cooled cooler 34. Even if the material of the liquid-cooled cooler 34 is a metal such as copper or aluminum having a large linear expansion coefficient, the first insulating substrate 22 and the second insulating substrate 26 can be prevented from cracking due to thermal stress.

As a result, the material of the first liquid-cooled cooler 33 and the second liquid-cooled cooler 34 can be made to have a higher heat conductivity and a more complicated processing than the metal-based composite material. The fins, which are the means for expanding the heat transfer area, can be processed, and it is possible to use metals such as copper and aluminum that are less likely to break than metal-based composite materials, further improving cooling efficiency and facilitating manufacture. Also, the reliability can be improved.

In the conventional inverter shown in FIGS. 11 to 13, the thermal resistance from the junction to the cooling water per IGBT 191 chip is about 0.3.
However, in the configuration of the inverter device according to the present embodiment as shown in FIG. 5, the IGBT 191 1
The thermal resistance from the junction to the cooling water per chip is about 0.19 K / W, and the thermal resistance is almost halved.

As a result, in addition to having the same effects as the inverter devices of the first and second embodiments, the cooling efficiency and reliability are further improved, and the inverter device is simplified. Can be.

As described above, in the inverter device according to the present embodiment, the contact thermal resistance is eliminated, and the cooling efficiency can be further improved.

(Fourth Embodiment: Corresponding to Claims 8 to 10) FIG. 6 is a front sectional view showing a configuration example of an inverter device according to this embodiment, and FIG. 7 is an inverter device according to this embodiment. FIG. 8 is a side sectional view showing a configuration example of the inverter device according to the present embodiment;
FIG. 9 is a perspective view showing a configuration example of the inverter device according to the present embodiment, and FIG. 10 is a circuit diagram showing a configuration example of the inverter device according to the present embodiment. The description is omitted here, and only different parts will be described here.

In FIGS. 6 to 10, the 3 shown in FIG.
The IGBT 191 and the FRD 201, which are semiconductor chips forming the upper arm of the U-phase of the phase inverter, are joined to the first insulating substrate 22 and the second insulating substrate 26 via the thermal buffer plate 24.

In this embodiment, the IGBT 191
The FRD 201 has a three-parallel configuration.

IGBT1 which is a semiconductor chip constituting the V-phase upper arm of the three-phase inverter shown in FIG.
The IGBT 195 and the diode 205, which are semiconductor chips constituting the W-phase upper arm of the three-phase inverter shown in FIG. 10, also have the first insulating substrate 22 and the second And an insulating substrate 26 via a thermal buffer plate 24.

On the other hand, IGBT1 which is a semiconductor chip constituting the lower arm of the U-phase of the three-phase inverter shown in FIG.
92 and the diode 202 are connected to the third insulating substrate 37 and the fourth insulating substrate 3 as in the case of the upper arm.
8 and a thermal buffer plate 24.

IGBT1 which is a semiconductor chip constituting the lower arm of the V-phase of the three-phase inverter shown in FIG.
The IGBT 196 and the diode 206, which are the semiconductor chips constituting the lower arm of the W-phase of the three-phase inverter shown in FIG. With the insulating substrate 38 of FIG.

On the other hand, the first insulating substrate 22 and the second insulating substrate 26 forming the upper arm of the three-phase inverter shown in FIG. 10, and the third insulating substrate 37 forming the lower arm
And the fourth insulating substrate 38 are joined to the first liquid-cooled cooler 33 at a predetermined distance.

A first insulating substrate 22 and a second insulating substrate 26 constituting the upper arm of the three-phase inverter shown in FIG. 10 and a third insulating substrate 37 constituting the lower arm
And a fourth insulating substrate 38, a positive-side conductor 39 connected to the positive side of the DC power supply, a negative-side conductor 40 connected to the negative side, and a three-phase output conductor 41 are laminated via an insulator 42. The laminated substrate 43 is arranged.

Further, the second liquid-cooled cooler 34 is provided above the second insulating substrate 26 and the fourth insulating substrate 38.
Are joined.

On the other hand, the second liquid-cooled cooler 34 is divided into two parts, which are respectively joined to the second insulating substrate 26 and the fourth insulating substrate 38, so that the second insulating substrate 26 and the fourth And a three-phase output conductor 41 between the two divided liquid-cooled coolers 34.
I'm taking out.

The first liquid-cooled cooler 33 and the second
The periphery of the liquid-cooled cooler 34 and the space between the two divided liquid-cooled coolers 34 are sealed with a package 44 having an insulating property.

Further, the inside of the package 44 is filled with an insulating polymer material.

Further, the semiconductor chip IGBT
From 191 to 196, the gate 45 and the current sense 46
The first liquid-cooled cooler 33 and the second liquid-cooled cooler 33 are substantially parallel to the first liquid-cooled cooler 33 and the second liquid-cooled cooler 34.
Outer space 47 formed between the liquid-cooled coolers 34
More.

Next, in the inverter device according to the present embodiment configured as described above, the same functions and effects as those of the inverter devices according to the above-described first to third embodiments can be obtained.

Further, in addition to this, IGBT 191 and FRD 20 constituting the upper arm of the three-phase inverter
1 is bonded to the first insulating substrate 22 and the second insulating substrate 26 via the thermal buffer plate 24, and the IGBT 192 and the diode 202 constituting the lower arm are connected to the third insulating substrate 37 and the fourth insulating substrate. First insulating substrate 2 which is joined to substrate 38 via thermal buffer plate 24 and forms an upper arm
The second and second insulating substrates 26, the third insulating substrate 37 and the fourth insulating substrate 38 constituting the lower arm are joined to the first liquid-cooled cooler 33 at a predetermined distance,
Between the first insulating substrate 22 and the second insulating substrate 26 forming the upper arm and the third insulating substrate 37 and the fourth insulating substrate 38 forming the lower arm, the positive side of the DC power supply is connected. A laminated substrate 43 in which a positive conductor 39 to be connected, a negative conductor 40 to be connected to the negative electrode, and a three-phase output conductor 41 are laminated via an insulator 42 is arranged.
In addition, since the second liquid-cooled cooler 34 is joined to the upper part of the fourth insulating substrate 38, the IGBTs 191 to 191 are formed.
Even if both sides of the 196 and the diodes 201 to 206 are cooled, a three-phase inverter can be configured with a small wiring parasitic inductance and a simple structure.

As described above, in the inverter device according to the present embodiment, even if a plurality of semiconductor chips are cooled on both surfaces, a three-phase inverter can be formed with a small wiring parasitic inductance and a simple structure. Become.

[0096]

As described above, according to the inverter device of the present invention, a plurality of semiconductor chips can be cooled on both sides, thereby improving the cooling efficiency and reducing the parasitic inductance of the wiring. As a result, overvoltage and loss can be reduced, the current carrying capacity of the inverter device can be improved, and the reliability can be improved.

Further, even when a plurality of semiconductor chips are cooled on both sides, a three-phase inverter can be configured with a small parasitic inductance of wiring and a simple structure.

[Brief description of the drawings]

FIG. 1 is a partial longitudinal sectional view showing a mounting configuration example of a semiconductor chip in an inverter device according to a first embodiment of the present invention.

FIG. 2 is a sectional view taken along line AA of FIG.

FIG. 3 is a sectional view taken along line BB of FIG. 1;

FIG. 4 is a partial longitudinal sectional view showing a configuration example of an inverter device according to a second embodiment of the present invention.

FIG. 5 is a partial longitudinal sectional view showing a configuration example of an inverter device according to a third embodiment of the present invention.

FIG. 6 is a front sectional view showing a configuration example of an inverter device according to a fourth embodiment of the present invention.

FIG. 7 is a plan sectional view showing a configuration example of an inverter device according to a fourth embodiment of the present invention.

FIG. 8 is a side view showing a configuration example of an inverter device according to a fourth embodiment of the present invention.

FIG. 9 is a perspective view showing a configuration example of an inverter device according to a fourth embodiment of the present invention.

FIG. 10 is a circuit diagram showing a configuration example of an inverter device according to a fourth embodiment of the present invention.

FIG. 11 is a horizontal sectional view showing a configuration example of a conventional inverter device.

FIG. 12 is a side sectional view showing a configuration example of a conventional inverter device.

FIG. 13 is a partial cross-sectional view showing a configuration example of a power semiconductor element in a conventional inverter device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Inverter housing | casing 2 ... Power semiconductor element 3 ... Mounting screw 4 ... Aluminum electrolytic capacitor 5 ... Fixing stand 6 ... Connection screw 7 ... Positive side conductor 8 ... Negative side conductor 91-93 ... 3-phase output conductor 101-102 ... Current detector 11 ... Control unit 12 ... Water inlet 13 ... Water outlet 14 ... Coolant 15 ... Flow path 16 ... Metal plate for heat radiation 17 ... Insulating substrate 18 ... Metal electrodes 191-196 ... IGBT 201-206 ... Diode 21 ... Wire Bonding 22: First insulating substrate 23: First metal electrode 24: Thermal buffer plate 25: Second metal electrode 26: Second insulating substrate 27: Collector electrode outlet 28 ... Emitter electrode outlet 29: Gate wire Bonding 30 Gate outlet 31 Current sensing wire bonding 32 Current sensing outlet 33 First liquid-cooled cooler DESCRIPTION OF SYMBOLS 4 ... 2nd liquid cooling type cooler 35 ... Thermal stress buffer board 36 ... Power supply smoothing capacitor 37 ... 3rd insulating board 38 ... 4th insulating board 39 ... Positive side conductor 40 ... Negative side conductor 41 ... 3 phase Output conductor 42 ... Insulator 43 ... Laminated substrate 44 ... Package 45 ... Gate 46 ... Current sense 47 ... Space in the outer periphery.

Claims (10)

[Claims] An inverter device comprising: a plurality of power semiconductor elements; a drive circuit for driving the plurality of power semiconductor elements; and a control circuit for controlling the plurality of power semiconductor elements. A first metal electrode is joined to an upper portion of a first insulating substrate, a plurality of semiconductor chips are joined to an upper portion of the first metal electrode, and a thermal buffer is joined to an upper portion of the plurality of semiconductor chips. An inverter device comprising: a second metal electrode bonded to an upper portion of the thermal buffer plate; and a second insulating substrate bonded to an upper portion of the second metal electrode. 2. The inverter device according to claim 1, wherein the first metal electrode is used as a collector electrode, the second metal electrode is used as an emitter electrode, and an outlet for the collector electrode and an outlet for the emitter electrode. An inverter provided in the same direction, wherein a direction of a current flowing through the first metal electrode and a direction of a current flowing through the second metal electrode are opposed to each other. 3. The inverter device according to claim 1, wherein a material of the thermal buffer plate is Mo, W, Cu-W, which has a linear expansion coefficient similar to that of the plurality of semiconductor chips. Cu-
An inverter device comprising a metal such as Mo. 4. The method according to claim 1, wherein
3. The inverter device according to claim 1, wherein the thermal buffer plate has a thickness sufficient to draw gates and current senses from the plurality of semiconductor chips by wire bonding. 5. The method according to claim 1, wherein
In the inverter device described in the paragraph, a first liquid-cooled cooler having a hollow inside and through which a refrigerant passes is joined to a lower part of the first insulating substrate, and an inner part is hollow to an upper part of the second insulating substrate. An inverter device, wherein a second liquid-cooled cooler through which a refrigerant passes is joined, and the plurality of semiconductor chips are cooled on both sides. 6. The inverter device according to claim 5, wherein the material of the first and second liquid-cooled coolers is A.
An inverter device comprising a metal-based composite material that is a composite material of a metal such as l-SiC or Cu-SiC and a ceramic. 7. The inverter device according to claim 5, wherein the material of the first and second liquid-cooled coolers is:
A metal such as copper or aluminum;
And Al- having substantially the same shape as the second insulating substrate.
A metal thermal stress buffer plate made of a metal matrix composite material such as SiC or Cu-SiC, or a metal thermal stress buffer plate made of a metal such as Mo or W having a linear expansion coefficient similar to that of the first and second insulating substrates. An inverter device, wherein the inverter device is joined to the first and second insulating substrates. 8. The method according to claim 1, wherein
In the inverter device described in the paragraph, a plurality of semiconductor chips constituting an upper arm of the three-phase inverter are joined to the first insulating substrate and the second insulating substrate via a thermal buffer plate, A plurality of semiconductor chips forming a lower arm are joined to a third insulating substrate and a fourth insulating substrate via a thermal buffer plate, and first and second insulating members forming an upper arm of the three-phase inverter A substrate and third and fourth insulating substrates constituting a lower arm of the three-phase inverter are joined to the first liquid-cooled cooler at a fixed distance, and an upper arm of the three-phase inverter is provided. Between the first and second insulating substrates forming the lower arm of the three-phase inverter and the third and fourth insulating substrates forming the lower arm of the three-phase inverter. Negative to connect with the side A laminated substrate in which a pole-side conductor and a three-phase output conductor are laminated via an insulator is arranged, and the second liquid-cooled cooler is joined to the upper part of the second insulating substrate and the fourth insulating substrate. An inverter device characterized in that: 9. The inverter device according to claim 8, wherein a gate and a sense are provided by the plurality of semiconductor chips.
An inverter device, which is taken out from a space of an outer peripheral portion formed between the first and second liquid-cooled coolers substantially in parallel with the first and second liquid-cooled coolers. 10. The inverter device according to claim 8, wherein the second liquid-cooled cooler is divided into two and joined to the second insulating substrate and the fourth insulating substrate, respectively. From the space between the two divided liquid-cooled coolers, 3
An inverter device characterized by taking out a phase output conductor.