CN105990275B - Power module package part and preparation method thereof - Google Patents
Power module package part and preparation method thereof Download PDFInfo
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- CN105990275B CN105990275B CN201510090493.7A CN201510090493A CN105990275B CN 105990275 B CN105990275 B CN 105990275B CN 201510090493 A CN201510090493 A CN 201510090493A CN 105990275 B CN105990275 B CN 105990275B
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- hole
- radiating
- power module
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- module package
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000005538 encapsulation Methods 0.000 claims abstract description 42
- 238000001746 injection moulding Methods 0.000 claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000002347 injection Methods 0.000 claims description 36
- 239000007924 injection Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000005022 packaging material Substances 0.000 description 6
- 239000004033 plastic Substances 0.000 description 6
- 239000004593 Epoxy Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920000106 Liquid crystal polymer Polymers 0.000 description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229920006336 epoxy molding compound Polymers 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 230000017260 vegetative to reproductive phase transition of meristem Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of power module package parts and preparation method thereof.The power module package part is made of top encapsulation part and lower part radiating part, the top encapsulation part has the through hole being made of the second through hole of the first through hole of heat-radiating substrate and injection molding part, top encapsulation part is engaged with lower part radiating part and the rod piece of lower part radiating part is inserted into such top encapsulation part, and the heat for resulting from top encapsulation part can be discharged rapidly.Moreover, the production method of power module package part of the invention can be such that the rod piece of lower part radiating part is inserted through in the through hole of top encapsulation part.
Description
Technical field
The present invention relates to a kind of power module package parts and preparation method thereof.
Background technique
As energy usage amount increases in the range of the whole world, start to give the effective use of the limited energy greatest
Care.Then, existing household electrical appliances use and/or industrial products in, using being intended to effectively convert (conversion) energy
Intelligent power module (the IPM in source；Intelligent Power Module) inverter use obtain accelerationization.
With the expansion application of such power module, the demand in market increasingly tends to highly integrated/high capacity/small
Type, the result that the heat dissipation problem of incident electronic component causes the performance of entire module to decline.
In general, higher heat is generated in power conversion process, if the heat generated cannot effectively eliminate,
Possibly even lead to the reduced performance and damage of module or even whole system.Also, recent trend is in intelligent power mould
Multi-functional, the miniaturization of component are also required in block, being accordingly used in multi-functional, miniaturization structural improvement is no doubt key factor,
Being released effectively for resulting heat also becomes important factor.
In the prior art, it is made as to improve the thermal property of power semiconductor modular such as flowering structure: by heat
Force device is mounted on the heat-radiating substrate that the higher metal of conductivity is constituted, then uses sealing material injection molding.
At this point, being realized in view of production and production efficiency using mold in injection molding process, usually will
Epoxy-plastic packaging material (Epoxy Molding Compound；EMC) use is injected molded polymeric material.Injected molded polymeric material provides insulation
Property, and can be used as heat transfer path and utilize.
Patent document 1 proposes a kind of power module package part for being pasted with radiator, includes the following steps: multiple in attaching
The lower surface bonds radiator of chip and the lead frame being wire-bonded, is then sealed against (sealing).In order to make to radiate
The lower surface of device is exposed to the outside of epoxy-plastic packaging material, needs to be formed in lower mould for fixed heat sink lower surface
Slot.
[existing technical literature]
[patent document]
Patent document 1: US publication US2001/0052639
Summary of the invention
The purpose of the present invention is to provide a kind of the heat-radiating substrate and dissipate that material is sealed can be injection molded by ensureing
The good engagement state of hot device and the power module package part for discharging the heat for resulting from semiconductor chip towards multiple directions
And preparation method thereof.
In order to achieve the above object, a kind of power module package part of preferred embodiment in accordance with the present invention, comprising: top
Encapsulation part, the more than one through hole formed with through-thickness；Lower part radiating part has main body and more than one bar
Part, one above rod piece extend in the upper surface of the main body towards vertical direction, the lower part radiating part be arranged as with
The lower surface of top encapsulation part forms face contact, wherein and the rod piece of lower part radiating part is inserted through in the through hole of top encapsulation part, from
And being combined into mutually to radiate.
Also, the present invention provides a kind of production method of power module package part above-mentioned, includes the following steps: the first step
Suddenly, the heat-radiating substrate that through-thickness is formed with more than one first through hole is provided；Second step loads heat-radiating substrate
In the lower part injection mould of mold；The top injection mould of mold is set on the injection mould of lower part by third step；Four steps, will
Injected molded polymeric material is injected into mold and forms top encapsulation part；5th step, by top encapsulation part and lower part radiating part into
Row assembling.
Feature and advantage of the invention will be more clearly understood that by the following detailed description based on attached drawing.
It should be noted that the term or word used in the present specification and claims should not be limited to common dictionary
Meaning and explain, but should based on inventor can in order to illustrate in an optimal manner oneself invention and it is appropriately fixed
The principle of adopted term concepts and be construed to meaning and concept of the technical idea of the present invention.
Detailed description of the invention
Fig. 1 is the perspective view of the power module package part of preferred embodiment in accordance with the present invention viewed from above.
Fig. 2 is the perspective view of the power module package part viewed from above before installing lower part radiating part.
Fig. 3 is roughly to illustrate with the sectional view of the power module package part of the III-III line interception of Fig. 1.
Fig. 4 a to Fig. 4 e is the figure for illustrating the production method of power module package part of preferred embodiment in accordance with the present invention.
Symbol description
1: power module package part 100: top encapsulation part
110: 116: the first through hole of heat-radiating substrate
120: semiconductor chip 130: lead frame
140: conductive pins 150: injection molding part
156: the second through holes 160: through hole
200: lower part radiating part 211: radiating fin
216: rod piece 1000: mold
1100: top injection mould 1200: lower part injection mould
Specific embodiment
The embodiment illustrated in conjunction with the accompanying drawings will be appreciated that advantages of the present invention, feature and the side for achieving the goal
Method.In the present specification, when appended drawing reference to be given to the constituent element of each attached drawing, identical appended drawing reference is entirely being said
Same or similar constituent element is indicated in bright book.Moreover, if it is considered in the present specification to the specific of related known technology
Illustrate to be possible to cause unnecessary confusion to purport of the invention, then description is omitted.
Hereinafter, power module package part according to the present invention and preparation method thereof is explained in detail with reference to the accompanying drawings.
Fig. 1 to Fig. 3 is the figure that outlined the power module package part 1 of preferred embodiment in accordance with the present invention, in particular,
Fig. 2 schematically shows the power module package part 1 before installation lower part radiating part 200.
Referring to attached drawing, the power module package part 1 of preferred embodiment in accordance with the present invention includes top encapsulation part 100, borrows
Help injection molding part 150 and encapsulates (encapsulation) heat-radiating substrate 110, semiconductor chip 120, lead frame 130
Deng；Lower part radiating part 200 is attached at the lower surface of the heat-radiating substrate 110 of top encapsulation part 100 and discharges heat to outside.Its
In, lower part radiating part 200 can be radiator (heat sink).
In the power module package part 1 of preferred embodiment in accordance with the present invention, top encapsulation part 100 can include heat dissipation
Substrate 110, semiconductor chip 120, lead frame 130, conductive pins 140 and injection molding part 150.
Specifically, heat-radiating substrate 110 helps semiconductor chip in attachment face (that is, one side of heat-radiating substrate 110) 111
120 attachment, at the same time, heat-radiating substrate 110 pass through the joint surface that will mount 111 back side of face (that is, heat-radiating substrate 110 is another
It 112 is engaged on one side) to outer exposed with lower part radiating part 200.Top encapsulation part 100, which is packaged into, makes heat-radiating substrate above-mentioned
110 joint surface 112 is externally exposed.In particular, heat-radiating substrate 110 is formed with from one towards the perforation of another side through-thickness
More than one first through hole 116.First through hole 116 helps the knot of the aftermentioned lower part radiating part 200 as radiator
It closes.
Insulating layer (not shown) can be laminated in power module package part 1 on the attachment face of heat-radiating substrate 110 111.Insulating layer
It can be by epoxy material (epoxy), polyimides (polyimide；PI), liquid crystal polymer (Liquid Crystal Polymer；
LCP), phenol resin (Phenol resin), BT resin (Bismaleimide-Triazine resin；Bismaleimide-three
Piperazine resin) composed by a composition in group, and be not limited thereto.Insulating layer makes following circuit pattern and heat-radiating substrate
Between be electrically insulated, and play the role of the heat transfer for making to generate in circuit pattern to heat-radiating substrate 110.
It in the present invention, can also laminate circuits pattern (not shown) on the insulating layer.The circuit pattern can be by exhausted
Patterned metal foil or patterned lead frame are laminated in edge layer and is formed, or can be by the inclusion of electroless plating coating process
It is formed with the plating technic of electrolytic coating process.Circuit pattern is not limited thereto, and explanation can be by way of multiplicity in advance
And it is formed on insulating layer.Circuit pattern can be engaged with lead frame 130, or can mounting semiconductor chips 120, and with it is each
A component parts electrical connection.Unlike this, semiconductor chip 120 can also be mounted on lead frame 130.
The power module package part 1 of preferred embodiment in accordance with the present invention can be using the lead of conductive pins 140
Semiconductor chip 120 and/or lead frame 130 are electrically connected by bonding pattern.
As shown, power module package part 1 is formed with: semiconductor chip 120；Lead frame 130, connects using for outside
Connecting terminal；And injection molding part 150, by epoxy-plastic packaging material (Epoxy Molding Compound；EMC it) constitutes to coat
Conductive pins 140 and heat-radiating substrate 110.It is formed with lead frame 130 towards the outside of the injection molding part 150 protrusion, and
The injection molding part 150, which is packaged into, is externally exposed the joint surface 112 of heat-radiating substrate 110.Injection molding part 150 can be adopted
With materials such as the epoxy-plastic packaging materials of silica gel (silicon gel) or well-known high thermal conductivity.
In an embodiment of the present invention, injection molding part 150 is formed with more than one second along its thickness direction and passes through
Through-hole 156.Preferably, the second through hole 156 is aligned to conllinear with the first through hole 116 of heat-radiating substrate 110, so as to incite somebody to action
Second through hole 156 is arranged as facing each other with the first through hole 116.
Also, the present invention also has lower part radiating part 200, which is attached under top encapsulation part 100
More specifically surface is attached at 112 lower part of joint surface of heat-radiating substrate 110, rapid with the heat for will generate in operation
It is discharged into operating reliability that is external and improving semiconductor chip.Lower part radiating part 200 is used as a kind of radiator, can be by metal material
Material is constituted, and is not limited thereto and can be used all material that can improve heat dissipation characteristics.
Lower part radiating part 200 has multiple radiating fins 211 in 210 lower part of main body.Such lower part radiating part 200 has
The structure of heat dissipation effect, the system are improved and making space of the refrigerant circulation between radiating fin 211 and radiating fin
Cryogen is for example exactly air.
In particular, lower part radiating part 200 is more than one with extending from the smooth top of main body 210 towards vertical direction
Rod piece (rod) 216.Rod piece 216 as it is a kind of with interference inserted mode be inserted through top encapsulation part 100 through hole 160 and will under
Portion's radiating part 200 and top encapsulation part 100 are fixed as that the medium of face contact can be achieved, and can also use as that will result from top envelope
Heat movement routine of the heat transfer of the inside in dress portion 100 to outside.The length of rod piece 216 should with by top encapsulation part
The formation length of the through hole 160 of 100 through-thickness perforation is equal or longer than it.Wherein, top encapsulation part 100 is passed through
Through-hole 160 refers to the first through hole 116 by heat-radiating substrate 110 and the second through hole 156 for being formed in injection molding part 150
It is aligned to straight line and integrally formed hole.
Semiconductor chip 120 is mounted on the one side of heat-radiating substrate 110, such as is mounted on attachment face 111.Semiconductor chip
120 can be power component or control element.Power component can be by silicon controlled rectifier (Silicon Controlled
Rectifier；SCR), power transistor, insulated gate bipolar transistor (Insulated Gate Bipolar
Transistor；IGBT), MOS transistor, power rectifier, power governor, inverter (inverters), converter
(convertor) or a combination thereof the high power semiconductor chip or diode (diode) of form are constituted, and special limitation
In this.
As those skilled in the art are known, control element may include low-power semiconductor chip, should
Low-power semiconductor chip is used to control high power semiconductor chip, such as controlling power component, however is not limited to
This.
In addition, semiconductor chip 120 can be mounted on heat-radiating substrate 110 by means of adhering part (not shown), and
Adhering part can be electroconductive component or non-conductive component.
In addition, adhering part can be formed by metal lining, adhering part is also possible to conductive paste or electric conductivity
Adhesive tape.Adhering part can be solder (solder), metal epoxy material, metal paste, resin system epoxy material or heat resistance
Excellent jointing tape.
In power module package part 1, the one end part of lead frame 130 in the neighboring of heat-radiating substrate 110, and with
Semiconductor chip 120 is electrically connected.The other end of lead frame 130 extends to prominent to the outside of injection molding part 150.
The production method that Fig. 4 a to Fig. 4 e indicates the power module package part of preferred embodiment in accordance with the present invention.
Referring to Fig. 4 a, the present invention includes step S100, and provide has more than one first through hole in the step s 100
116 heat-radiating substrate 110.In the step s 100, heat-radiating substrate 110 is led on its attachment face by attachment lead frame 130 and partly
Body chip 120, and be electrically connected lead frame 130 with semiconductor chip 120 with conductive pins 140.
Then, as shown in Figure 4 b, the present invention includes step S200, in step s 200 loads heat-radiating substrate 110
(loading) in the lower part injection mould 1200 of mold 1000.
In particular, more than one guidance pin 1210 is configured to prominent towards vertical top by lower part injection mould 1200.The guidance
Pin 1210 can be projected into heat dissipation by that will be placed in the first through hole 116 of the heat-radiating substrate 110 of lower part injection mould 1200
Above the attachment face of substrate 110.For this purpose, the length of guidance pin 1210 should be longer than the thickness of heat-radiating substrate 110.It is available
Ground, guidance pin 1210 can be formed with engagement groove 1211 in end on it.
Guidance pin 1210 can not only block injection molding part 150 to the first perforation in subsequent injection-moulding step
It is flowed into inside hole 116, but also helps the determination for being loaded into the position of the heat-radiating substrate 110 of lower part injection mould 1200.In addition, drawing
Guide pin 1210 persistently provides support with the state for being inserted into the first through hole 116 of heat-radiating substrate 110, to prevent from dissipating in technique
The buckling phenomenon of hot substrate 110, it is possible thereby to maintain the flatness of heat-radiating substrate 110.
Wire bonding sequence needed for lead frame 130 and semiconductor chip 120 both can be as previously mentioned in step
Implement in advance in S100, also can according to need and be in step s 200 first inserted into the first through hole 116 of heat-radiating substrate 110
It is executed after to the guidance pin 1210 of lower part injection mould 1200.
Fig. 4 c indicates the step S300 being set to top injection mould 1100 on lower part injection mould 1200.
Top injection mould 1100 is formed with more than one guidance pin 1110 towards vertically below prominent, it is one more than
Pin 1110 is guided to correspond to the guidance pin 1210 of lower part injection mould 1200.The guidance pin 1110 is arranged to be molded with lower part
The guidance pin 1210 of mould 1200 cooperates along straight line.Therefore, it is molded in order to which top injection mould 1100 is placed in lower part
Mould 1200, guidance pin 1100 should extend to the guidance pin 1210 of lower part injection mould 1200 from the inner surface of top injection mould 1100
Place.Alternatively, guidance pin 1110 is formed in its lower end in conjunction with protrusion 1111, this combines protrusion 1111 to be inserted into be formed
In the engagement groove 1211 of the guidance pin 1210 of lower part injection mould 1200, to help the determination of the position of top injection mould 1100
(referring to Fig. 4 b).
Guidance pin 1210 and guidance pin 1110 along straight line arrangement can make one in subsequent injection-moulding step
A the second above through hole 156 is formed along the thickness direction of injection molding part 150 (referring to Fig. 4 e).
Fig. 4 d schematically shows the step S400 of the formation of injection molding part 150.Heat-radiating substrate 110 is molded by lower part
The guidance pin 1210 of mould 1200 is inserted into, and top injection mould 1100 and lower part injection mould 1200 are fit.Then, injected molded polymeric material
It is injected into 1000 inside of mold and fills mold inner space, injected molded polymeric material for example what is be widely known can be used to lead
The higher epoxy-plastic packaging material of heating rate.
If injection molding processes terminate, top encapsulation part 100 is demoulded from mold 1000 in the present invention.Top envelope
Dress portion 100 forms more than one second by 150 forming step S400 of injection molding part in injection molding part 150
Through hole 156 (referring to Fig. 4 e).Second through hole 156 is exactly in injection molding part forming step S400 due to cooperate shape
2 guidance pins 1110,1210 of state arrangement exist without the region filled by epoxy-plastic packaging material.
After demoulding top encapsulation part 100, the present invention can also additionally include formed body burr removing step, the work
Sequence is used to remove because passing through top injection mould and lower part injection mould or injected molded polymeric material inlet without necessarily flowing out
Injected molded polymeric material and 100 outer surface of top encapsulation part generate formed body burr.Formed body burr may be rear
Cause metal lining bad in continuous process and engagement state between top encapsulation part 100 and lower part radiating part 200 is bad.
The assembling steps S500 of Fig. 4 e expression top encapsulation part 100 and lower part radiating part 200.
Top encapsulation part 100 be formed with by heat-radiating substrate 110 the first through hole 116 and injection molding part 150
The through hole 160 that two through holes 156 are constituted.Lower part radiating part 200 is arranged as and the lower surface of top encapsulation part 100, heat dissipation base
The joint surface of plate 110 is adjacent.It as needed, can volume between the body top of lower part radiating part 200 and the joint surface of heat-radiating substrate
Outer coating joint element or thermally conductive grease (thermal grease).Then, by the more than one rod piece of lower part radiating part 200
216 are set to the lower part i.e. lower section of the first through hole 116 of through hole 160.With lower part radiating part 200 is moved upward (or
Person top encapsulation part 100 moves downwards, and also or lower part radiating part 200 is moved towards with top encapsulation part 100), rod piece 216
It is fully inserted through in the inside of through hole 160, to make the upper surface of lower part radiating part 200 and the lower surface of top encapsulation part 100
It is reliably formed face contact, it is possible thereby to which the heat for resulting from top encapsulation part 100 is discharged by lower part radiating part 200
It is external.The high heat generated in top encapsulation part 100 can also be sealed by the rod piece 216 of lower part radiating part 200 from top
The upper surface in dress portion 100 discharges.
In an embodiment of the present invention, due to arranging lower part radiating part in the region for corresponding to semiconductor chip lower part,
Therefore the heat production from semiconductor chip can be eliminated rapidly, then not only can be improved the operation of power module package part can
By property, but also it can ensure the good bonding state between top encapsulation part and lower part radiating part.
Having passed through specific embodiment above, the present invention will be described in detail, however this is intended merely to illustrate the present invention, root
It is not limited thereto according to power module package part and preparation method thereof of the invention, with personnel's energy of general knowledge in this field
It is enough to implement deformation to it within the scope of the technical idea of the present invention or improve to be self-evident.
Simple deformation of the invention or change all belong to the scope of the present invention, by claims it will be appreciated that this hair
Bright specific protection scope.
Claims (14)
1. a kind of power module package part, comprising:
Top encapsulation part, the more than one through hole formed with through-thickness；
Lower part radiating part has main body and more than one rod piece, and one above rod piece is in the upper surface of the main body
Extending towards vertical direction, the lower part radiating part is arranged as forming face contact with the lower surface of the top encapsulation part,
The top encapsulation part includes: heat-radiating substrate, and through-thickness is formed with more than one first through hole；Semiconductor core
Piece is mounted on the attachment face of the heat-radiating substrate；Lead frame is electrically connected with the heat-radiating substrate or semiconductor chip, and to
Outside is prominent；Injection molding part encapsulates the semiconductor chip and heat-radiating substrate, and through-thickness be formed with one with
On the second through hole, wherein the rod piece with interference inserted mode be inserted through in first through hole and it is described second perforation
Hole will result from the heat transfer of the inside of the top encapsulation part to external heat movement routine to use.
2. power module package part as described in claim 1, wherein the length of the extension of the rod piece is equal to or more than described
The formation length of through hole.
3. power module package part as described in claim 1, wherein the rod piece of the lower part radiating part be arranged in it is described on
The corresponding position of the through hole of portion's encapsulation part.
4. power module package part as described in claim 1, wherein the semiconductor chip or heat-radiating substrate pass through electric conductivity
Lead and be electrically connected with the lead frame.
5. power module package part as described in claim 1, wherein heat-radiating substrate described in the injection molding part blow-by
Lower surface.
6. power module package part as described in claim 1, wherein the through hole of the upper package passes through to be dissipated described
First through hole of hot substrate is aligned to straight line with the second through hole of the injection molding part and is formed.
7. power module package part as described in claim 1, wherein the lower part radiating part is made of radiator, and described
The main body of lower part radiating part has multiple radiating fins in lower part.
8. a kind of production method of power module package part, includes the following steps:
First step provides the heat-radiating substrate that through-thickness is formed with more than one first through hole；
The heat-radiating substrate is loaded into the lower part injection mould of mold by second step；
The top injection mould of the mold is set on the lower part injection mould by third step；
Injected molded polymeric material is injected into the mold and forms top encapsulation part by four steps；
5th step assembles the top encapsulation part with lower part radiating part,
In the four steps, the injection molding part forms the second perforation along the thickness direction of the injection molding part
Hole,
The lower part radiating part includes: main body, has smooth top；Multiple radiating fins are provided to the lower part of the main body；
More than one rod piece extends on the top of the main body towards vertical direction,
In the 5th step, the rod piece of the lower part radiating part with interference inserted mode be inserted through first through hole and
Second through hole.
9. the production method of power module package part as claimed in claim 8, wherein the mold includes:
Lower part injection mould has towards vertical top more than one guidance pin outstanding；
Top injection mould has and accordingly more than one draws towards vertically below outstanding with the guidance pin of the lower part injection mould
Guide pin.
10. the production method of power module package part as claimed in claim 8, wherein in the second step, under described
The guidance pin of portion's injection mould is inserted through the first through hole in the heat-radiating substrate.
11. the production method of power module package part as claimed in claim 8, wherein in the second step, described to dissipate
The underside view of part of hot substrate is to form face contact with the lower part injection mould.
12. the production method of power module package part as claimed in claim 9, wherein in the third step, make described
The guidance pin of lower part injection mould mutually cooperates along straight line with the guidance pin of the top injection mould.
13. the production method of power module package part as claimed in claim 8, wherein the first perforation of the heat-radiating substrate
Hole is aligned with the second through hole of the injection molding part along straight line.
14. the production method of power module package part as claimed in claim 9, wherein the guidance pin of the lower part injection mould
There is engagement groove in upper end, and the guidance pin of top injection mould has in lower end in conjunction with protrusion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2014-0131532 | 2014-09-30 | ||
| KR1020140131532A KR20160038440A (en) | 2014-09-30 | 2014-09-30 | Power module package and method of fabricating thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105990275A CN105990275A (en) | 2016-10-05 |
| CN105990275B true CN105990275B (en) | 2019-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510090493.7A Expired - Fee Related CN105990275B (en) | 2014-09-30 | 2015-02-27 | Power module package part and preparation method thereof |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20160038440A (en) |
| CN (1) | CN105990275B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2018116037A (en) * | 2017-01-13 | 2018-07-26 | 株式会社エンプラス | Unit for mounting marker and method for manufacturing the same |
| JP6877561B2 (en) | 2017-09-21 | 2021-05-26 | 三菱電機株式会社 | Semiconductor device and power conversion device equipped with it |
| CN108000798B (en) * | 2017-12-13 | 2020-11-06 | 陕西宝成航空仪表有限责任公司 | Forming method of miniature conducting ring body suitable for manufacturing by electrodeposition process |
| KR102385112B1 (en) * | 2020-07-27 | 2022-04-11 | 한국생산기술연구원 | Heat dissipation structure of FR4 PCB for power semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640178A (en) * | 2008-07-30 | 2010-02-03 | 三洋电机株式会社 | Semiconductor device, method for manufacturing semiconductor device, and lead frame |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5710253A (en) * | 1980-06-23 | 1982-01-19 | Nec Corp | Semiconductor device |
| JPH11163230A (en) * | 1997-11-26 | 1999-06-18 | Hitachi Ltd | Semiconductor device, manufacture thereof, and mounting structure |
| JP2001035975A (en) * | 1999-07-22 | 2001-02-09 | Nec Corp | Bga-type semiconductor device package |
| JP3894070B2 (en) * | 2002-08-06 | 2007-03-14 | 富士通株式会社 | Heat sink, heat sink device, fixing method of heat sink, and electronic device using the heat sink |
| KR100786867B1 (en) * | 2005-11-30 | 2007-12-20 | 삼성에스디아이 주식회사 | Plasma display device |
-
2014
- 2014-09-30 KR KR1020140131532A patent/KR20160038440A/en not_active Application Discontinuation
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2015
- 2015-02-27 CN CN201510090493.7A patent/CN105990275B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101640178A (en) * | 2008-07-30 | 2010-02-03 | 三洋电机株式会社 | Semiconductor device, method for manufacturing semiconductor device, and lead frame |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20160038440A (en) | 2016-04-07 |
| CN105990275A (en) | 2016-10-05 |
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