CN105990275B - Power module package part and preparation method thereof - Google Patents

Power module package part and preparation method thereof Download PDF

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Publication number
CN105990275B
CN105990275B CN201510090493.7A CN201510090493A CN105990275B CN 105990275 B CN105990275 B CN 105990275B CN 201510090493 A CN201510090493 A CN 201510090493A CN 105990275 B CN105990275 B CN 105990275B
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CN
China
Prior art keywords
power module
heat dissipation
hole
module package
heat
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Expired - Fee Related
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CN201510090493.7A
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Chinese (zh)
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CN105990275A (en
Inventor
韩京昊
朱龙辉
张范植
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Publication of CN105990275A publication Critical patent/CN105990275A/en
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present invention relates to a kind of power module package parts and preparation method thereof.The power module package part is made of top encapsulation part and lower part radiating part, the top encapsulation part has the through hole being made of the second through hole of the first through hole of heat-radiating substrate and injection molding part, top encapsulation part is engaged with lower part radiating part and the rod piece of lower part radiating part is inserted into such top encapsulation part, and the heat for resulting from top encapsulation part can be discharged rapidly.Moreover, the production method of power module package part of the invention can be such that the rod piece of lower part radiating part is inserted through in the through hole of top encapsulation part.

Description

Power module package part and preparation method thereof
Technical field
The present invention relates to a kind of power module package parts and preparation method thereof.
Background technique
As energy usage amount increases in the range of the whole world, start to give the effective use of the limited energy greatest Care.Then, existing household electrical appliances use and/or industrial products in, using being intended to effectively convert (conversion) energy Intelligent power module (the IPM in source；Intelligent Power Module) inverter use obtain accelerationization.
With the expansion application of such power module, the demand in market increasingly tends to highly integrated/high capacity/small Type, the result that the heat dissipation problem of incident electronic component causes the performance of entire module to decline.
In general, higher heat is generated in power conversion process, if the heat generated cannot effectively eliminate, Possibly even lead to the reduced performance and damage of module or even whole system.Also, recent trend is in intelligent power mould Multi-functional, the miniaturization of component are also required in block, being accordingly used in multi-functional, miniaturization structural improvement is no doubt key factor, Being released effectively for resulting heat also becomes important factor.
In the prior art, it is made as to improve the thermal property of power semiconductor modular such as flowering structure: by heat Force device is mounted on the heat-radiating substrate that the higher metal of conductivity is constituted, then uses sealing material injection molding.
At this point, being realized in view of production and production efficiency using mold in injection molding process, usually will Epoxy-plastic packaging material (Epoxy Molding Compound；EMC) use is injected molded polymeric material.Injected molded polymeric material provides insulation Property, and can be used as heat transfer path and utilize.
Patent document 1 proposes a kind of power module package part for being pasted with radiator, includes the following steps: multiple in attaching The lower surface bonds radiator of chip and the lead frame being wire-bonded, is then sealed against (sealing).In order to make to radiate The lower surface of device is exposed to the outside of epoxy-plastic packaging material, needs to be formed in lower mould for fixed heat sink lower surface Slot.
[existing technical literature]
[patent document]
Patent document 1: US publication US2001/0052639
Summary of the invention
The purpose of the present invention is to provide a kind of the heat-radiating substrate and dissipate that material is sealed can be injection molded by ensureing The good engagement state of hot device and the power module package part for discharging the heat for resulting from semiconductor chip towards multiple directions And preparation method thereof.
In order to achieve the above object, a kind of power module package part of preferred embodiment in accordance with the present invention, comprising: top Encapsulation part, the more than one through hole formed with through-thickness；Lower part radiating part has main body and more than one bar Part, one above rod piece extend in the upper surface of the main body towards vertical direction, the lower part radiating part be arranged as with The lower surface of top encapsulation part forms face contact, wherein and the rod piece of lower part radiating part is inserted through in the through hole of top encapsulation part, from And being combined into mutually to radiate.
Also, the present invention provides a kind of production method of power module package part above-mentioned, includes the following steps: the first step Suddenly, the heat-radiating substrate that through-thickness is formed with more than one first through hole is provided；Second step loads heat-radiating substrate In the lower part injection mould of mold；The top injection mould of mold is set on the injection mould of lower part by third step；Four steps, will Injected molded polymeric material is injected into mold and forms top encapsulation part；5th step, by top encapsulation part and lower part radiating part into Row assembling.
Feature and advantage of the invention will be more clearly understood that by the following detailed description based on attached drawing.
It should be noted that the term or word used in the present specification and claims should not be limited to common dictionary Meaning and explain, but should based on inventor can in order to illustrate in an optimal manner oneself invention and it is appropriately fixed The principle of adopted term concepts and be construed to meaning and concept of the technical idea of the present invention.
Detailed description of the invention
Fig. 1 is the perspective view of the power module package part of preferred embodiment in accordance with the present invention viewed from above.
Fig. 2 is the perspective view of the power module package part viewed from above before installing lower part radiating part.
Fig. 3 is roughly to illustrate with the sectional view of the power module package part of the III-III line interception of Fig. 1.
Fig. 4 a to Fig. 4 e is the figure for illustrating the production method of power module package part of preferred embodiment in accordance with the present invention.
Symbol description
1: power module package part 100: top encapsulation part
110: 116: the first through hole of heat-radiating substrate
120: semiconductor chip 130: lead frame
140: conductive pins 150: injection molding part
156: the second through holes 160: through hole
200: lower part radiating part 211: radiating fin
216: rod piece 1000: mold
1100: top injection mould 1200: lower part injection mould
Specific embodiment
The embodiment illustrated in conjunction with the accompanying drawings will be appreciated that advantages of the present invention, feature and the side for achieving the goal Method.In the present specification, when appended drawing reference to be given to the constituent element of each attached drawing, identical appended drawing reference is entirely being said Same or similar constituent element is indicated in bright book.Moreover, if it is considered in the present specification to the specific of related known technology Illustrate to be possible to cause unnecessary confusion to purport of the invention, then description is omitted.
Hereinafter, power module package part according to the present invention and preparation method thereof is explained in detail with reference to the accompanying drawings.
Fig. 1 to Fig. 3 is the figure that outlined the power module package part 1 of preferred embodiment in accordance with the present invention, in particular, Fig. 2 schematically shows the power module package part 1 before installation lower part radiating part 200.
Referring to attached drawing, the power module package part 1 of preferred embodiment in accordance with the present invention includes top encapsulation part 100, borrows Help injection molding part 150 and encapsulates (encapsulation) heat-radiating substrate 110, semiconductor chip 120, lead frame 130 Deng；Lower part radiating part 200 is attached at the lower surface of the heat-radiating substrate 110 of top encapsulation part 100 and discharges heat to outside.Its In, lower part radiating part 200 can be radiator (heat sink).
In the power module package part 1 of preferred embodiment in accordance with the present invention, top encapsulation part 100 can include heat dissipation Substrate 110, semiconductor chip 120, lead frame 130, conductive pins 140 and injection molding part 150.
Specifically, heat-radiating substrate 110 helps semiconductor chip in attachment face (that is, one side of heat-radiating substrate 110) 111 120 attachment, at the same time, heat-radiating substrate 110 pass through the joint surface that will mount 111 back side of face (that is, heat-radiating substrate 110 is another It 112 is engaged on one side) to outer exposed with lower part radiating part 200.Top encapsulation part 100, which is packaged into, makes heat-radiating substrate above-mentioned 110 joint surface 112 is externally exposed.In particular, heat-radiating substrate 110 is formed with from one towards the perforation of another side through-thickness More than one first through hole 116.First through hole 116 helps the knot of the aftermentioned lower part radiating part 200 as radiator It closes.
Insulating layer (not shown) can be laminated in power module package part 1 on the attachment face of heat-radiating substrate 110 111.Insulating layer It can be by epoxy material (epoxy), polyimides (polyimide；PI), liquid crystal polymer (Liquid Crystal Polymer； LCP), phenol resin (Phenol resin), BT resin (Bismaleimide-Triazine resin；Bismaleimide-three Piperazine resin) composed by a composition in group, and be not limited thereto.Insulating layer makes following circuit pattern and heat-radiating substrate Between be electrically insulated, and play the role of the heat transfer for making to generate in circuit pattern to heat-radiating substrate 110.
It in the present invention, can also laminate circuits pattern (not shown) on the insulating layer.The circuit pattern can be by exhausted Patterned metal foil or patterned lead frame are laminated in edge layer and is formed, or can be by the inclusion of electroless plating coating process It is formed with the plating technic of electrolytic coating process.Circuit pattern is not limited thereto, and explanation can be by way of multiplicity in advance And it is formed on insulating layer.Circuit pattern can be engaged with lead frame 130, or can mounting semiconductor chips 120, and with it is each A component parts electrical connection.Unlike this, semiconductor chip 120 can also be mounted on lead frame 130.
The power module package part 1 of preferred embodiment in accordance with the present invention can be using the lead of conductive pins 140 Semiconductor chip 120 and/or lead frame 130 are electrically connected by bonding pattern.
As shown, power module package part 1 is formed with: semiconductor chip 120；Lead frame 130, connects using for outside Connecting terminal；And injection molding part 150, by epoxy-plastic packaging material (Epoxy Molding Compound；EMC it) constitutes to coat Conductive pins 140 and heat-radiating substrate 110.It is formed with lead frame 130 towards the outside of the injection molding part 150 protrusion, and The injection molding part 150, which is packaged into, is externally exposed the joint surface 112 of heat-radiating substrate 110.Injection molding part 150 can be adopted With materials such as the epoxy-plastic packaging materials of silica gel (silicon gel) or well-known high thermal conductivity.
In an embodiment of the present invention, injection molding part 150 is formed with more than one second along its thickness direction and passes through Through-hole 156.Preferably, the second through hole 156 is aligned to conllinear with the first through hole 116 of heat-radiating substrate 110, so as to incite somebody to action Second through hole 156 is arranged as facing each other with the first through hole 116.
Also, the present invention also has lower part radiating part 200, which is attached under top encapsulation part 100 More specifically surface is attached at 112 lower part of joint surface of heat-radiating substrate 110, rapid with the heat for will generate in operation It is discharged into operating reliability that is external and improving semiconductor chip.Lower part radiating part 200 is used as a kind of radiator, can be by metal material Material is constituted, and is not limited thereto and can be used all material that can improve heat dissipation characteristics.
Lower part radiating part 200 has multiple radiating fins 211 in 210 lower part of main body.Such lower part radiating part 200 has The structure of heat dissipation effect, the system are improved and making space of the refrigerant circulation between radiating fin 211 and radiating fin Cryogen is for example exactly air.
In particular, lower part radiating part 200 is more than one with extending from the smooth top of main body 210 towards vertical direction Rod piece (rod) 216.Rod piece 216 as it is a kind of with interference inserted mode be inserted through top encapsulation part 100 through hole 160 and will under Portion's radiating part 200 and top encapsulation part 100 are fixed as that the medium of face contact can be achieved, and can also use as that will result from top envelope Heat movement routine of the heat transfer of the inside in dress portion 100 to outside.The length of rod piece 216 should with by top encapsulation part The formation length of the through hole 160 of 100 through-thickness perforation is equal or longer than it.Wherein, top encapsulation part 100 is passed through Through-hole 160 refers to the first through hole 116 by heat-radiating substrate 110 and the second through hole 156 for being formed in injection molding part 150 It is aligned to straight line and integrally formed hole.
Semiconductor chip 120 is mounted on the one side of heat-radiating substrate 110, such as is mounted on attachment face 111.Semiconductor chip 120 can be power component or control element.Power component can be by silicon controlled rectifier (Silicon Controlled Rectifier；SCR), power transistor, insulated gate bipolar transistor (Insulated Gate Bipolar Transistor；IGBT), MOS transistor, power rectifier, power governor, inverter (inverters), converter (convertor) or a combination thereof the high power semiconductor chip or diode (diode) of form are constituted, and special limitation In this.
As those skilled in the art are known, control element may include low-power semiconductor chip, should Low-power semiconductor chip is used to control high power semiconductor chip, such as controlling power component, however is not limited to This.
In addition, semiconductor chip 120 can be mounted on heat-radiating substrate 110 by means of adhering part (not shown), and Adhering part can be electroconductive component or non-conductive component.
In addition, adhering part can be formed by metal lining, adhering part is also possible to conductive paste or electric conductivity Adhesive tape.Adhering part can be solder (solder), metal epoxy material, metal paste, resin system epoxy material or heat resistance Excellent jointing tape.
In power module package part 1, the one end part of lead frame 130 in the neighboring of heat-radiating substrate 110, and with Semiconductor chip 120 is electrically connected.The other end of lead frame 130 extends to prominent to the outside of injection molding part 150.
The production method that Fig. 4 a to Fig. 4 e indicates the power module package part of preferred embodiment in accordance with the present invention.
Referring to Fig. 4 a, the present invention includes step S100, and provide has more than one first through hole in the step s 100 116 heat-radiating substrate 110.In the step s 100, heat-radiating substrate 110 is led on its attachment face by attachment lead frame 130 and partly Body chip 120, and be electrically connected lead frame 130 with semiconductor chip 120 with conductive pins 140.
Then, as shown in Figure 4 b, the present invention includes step S200, in step s 200 loads heat-radiating substrate 110 (loading) in the lower part injection mould 1200 of mold 1000.
In particular, more than one guidance pin 1210 is configured to prominent towards vertical top by lower part injection mould 1200.The guidance Pin 1210 can be projected into heat dissipation by that will be placed in the first through hole 116 of the heat-radiating substrate 110 of lower part injection mould 1200 Above the attachment face of substrate 110.For this purpose, the length of guidance pin 1210 should be longer than the thickness of heat-radiating substrate 110.It is available Ground, guidance pin 1210 can be formed with engagement groove 1211 in end on it.
Guidance pin 1210 can not only block injection molding part 150 to the first perforation in subsequent injection-moulding step It is flowed into inside hole 116, but also helps the determination for being loaded into the position of the heat-radiating substrate 110 of lower part injection mould 1200.In addition, drawing Guide pin 1210 persistently provides support with the state for being inserted into the first through hole 116 of heat-radiating substrate 110, to prevent from dissipating in technique The buckling phenomenon of hot substrate 110, it is possible thereby to maintain the flatness of heat-radiating substrate 110.
Wire bonding sequence needed for lead frame 130 and semiconductor chip 120 both can be as previously mentioned in step Implement in advance in S100, also can according to need and be in step s 200 first inserted into the first through hole 116 of heat-radiating substrate 110 It is executed after to the guidance pin 1210 of lower part injection mould 1200.
Fig. 4 c indicates the step S300 being set to top injection mould 1100 on lower part injection mould 1200.
Top injection mould 1100 is formed with more than one guidance pin 1110 towards vertically below prominent, it is one more than Pin 1110 is guided to correspond to the guidance pin 1210 of lower part injection mould 1200.The guidance pin 1110 is arranged to be molded with lower part The guidance pin 1210 of mould 1200 cooperates along straight line.Therefore, it is molded in order to which top injection mould 1100 is placed in lower part Mould 1200, guidance pin 1100 should extend to the guidance pin 1210 of lower part injection mould 1200 from the inner surface of top injection mould 1100 Place.Alternatively, guidance pin 1110 is formed in its lower end in conjunction with protrusion 1111, this combines protrusion 1111 to be inserted into be formed In the engagement groove 1211 of the guidance pin 1210 of lower part injection mould 1200, to help the determination of the position of top injection mould 1100 (referring to Fig. 4 b).
Guidance pin 1210 and guidance pin 1110 along straight line arrangement can make one in subsequent injection-moulding step A the second above through hole 156 is formed along the thickness direction of injection molding part 150 (referring to Fig. 4 e).
Fig. 4 d schematically shows the step S400 of the formation of injection molding part 150.Heat-radiating substrate 110 is molded by lower part The guidance pin 1210 of mould 1200 is inserted into, and top injection mould 1100 and lower part injection mould 1200 are fit.Then, injected molded polymeric material It is injected into 1000 inside of mold and fills mold inner space, injected molded polymeric material for example what is be widely known can be used to lead The higher epoxy-plastic packaging material of heating rate.
If injection molding processes terminate, top encapsulation part 100 is demoulded from mold 1000 in the present invention.Top envelope Dress portion 100 forms more than one second by 150 forming step S400 of injection molding part in injection molding part 150 Through hole 156 (referring to Fig. 4 e).Second through hole 156 is exactly in injection molding part forming step S400 due to cooperate shape 2 guidance pins 1110,1210 of state arrangement exist without the region filled by epoxy-plastic packaging material.
After demoulding top encapsulation part 100, the present invention can also additionally include formed body burr removing step, the work Sequence is used to remove because passing through top injection mould and lower part injection mould or injected molded polymeric material inlet without necessarily flowing out Injected molded polymeric material and 100 outer surface of top encapsulation part generate formed body burr.Formed body burr may be rear Cause metal lining bad in continuous process and engagement state between top encapsulation part 100 and lower part radiating part 200 is bad.
The assembling steps S500 of Fig. 4 e expression top encapsulation part 100 and lower part radiating part 200.
Top encapsulation part 100 be formed with by heat-radiating substrate 110 the first through hole 116 and injection molding part 150 The through hole 160 that two through holes 156 are constituted.Lower part radiating part 200 is arranged as and the lower surface of top encapsulation part 100, heat dissipation base The joint surface of plate 110 is adjacent.It as needed, can volume between the body top of lower part radiating part 200 and the joint surface of heat-radiating substrate Outer coating joint element or thermally conductive grease (thermal grease).Then, by the more than one rod piece of lower part radiating part 200 216 are set to the lower part i.e. lower section of the first through hole 116 of through hole 160.With lower part radiating part 200 is moved upward (or Person top encapsulation part 100 moves downwards, and also or lower part radiating part 200 is moved towards with top encapsulation part 100), rod piece 216 It is fully inserted through in the inside of through hole 160, to make the upper surface of lower part radiating part 200 and the lower surface of top encapsulation part 100 It is reliably formed face contact, it is possible thereby to which the heat for resulting from top encapsulation part 100 is discharged by lower part radiating part 200 It is external.The high heat generated in top encapsulation part 100 can also be sealed by the rod piece 216 of lower part radiating part 200 from top The upper surface in dress portion 100 discharges.
In an embodiment of the present invention, due to arranging lower part radiating part in the region for corresponding to semiconductor chip lower part, Therefore the heat production from semiconductor chip can be eliminated rapidly, then not only can be improved the operation of power module package part can By property, but also it can ensure the good bonding state between top encapsulation part and lower part radiating part.
Having passed through specific embodiment above, the present invention will be described in detail, however this is intended merely to illustrate the present invention, root It is not limited thereto according to power module package part and preparation method thereof of the invention, with personnel's energy of general knowledge in this field It is enough to implement deformation to it within the scope of the technical idea of the present invention or improve to be self-evident.
Simple deformation of the invention or change all belong to the scope of the present invention, by claims it will be appreciated that this hair Bright specific protection scope.

Claims (14)

1.一种功率模块封装件，包括：1. A power module package, comprising: 上部封装部，具有沿厚度方向形成的一个以上的贯通孔；The upper package part has one or more through holes formed along the thickness direction; 下部散热部，具有主体和一个以上的杆件，所述一个以上的杆件在所述主体的上表面朝竖直方向延伸，所述下部散热部布置为与所述上部封装部的下表面形成面接触，The lower heat dissipation part has a main body and one or more rods, the one or more rods extend in the vertical direction on the upper surface of the main body, and the lower heat dissipation part is arranged to form with the lower surface of the upper packaging part face contact, 所述上部封装部包括：散热基板，沿厚度方向形成有一个以上的第一贯通孔；半导体芯片，贴装于所述散热基板的贴装面；引线框架，与所述散热基板或半导体芯片电连接，并向外部突出；注塑成型部件，将所述半导体芯片和散热基板封装，并沿厚度方向形成有一个以上的第二贯通孔，其中，所述杆件以过盈插入方式插穿于所述第一贯通孔和所述第二贯通孔，以使用为将产生于所述上部封装部的内部的热量传递到外部的热量移动路径。The upper encapsulation part includes: a heat-dissipating substrate with one or more first through holes formed along the thickness direction; a semiconductor chip mounted on the mounting surface of the heat-dissipating substrate; and a lead frame electrically connected to the heat-dissipating substrate or the semiconductor chip. connected and protruding to the outside; an injection molding part, which encapsulates the semiconductor chip and the heat dissipation substrate, and forms more than one second through hole along the thickness direction, wherein the rod is inserted through the The first through hole and the second through hole are used as a heat transfer path for transferring the heat generated inside the upper package portion to the outside. 2.如权利要求1所述的功率模块封装件，其中，所述杆件的延伸的长度等于或大于所述贯通孔的形成长度。2 . The power module package of claim 1 , wherein an extended length of the rod is equal to or greater than a formation length of the through hole. 3 . 3.如权利要求1所述的功率模块封装件，其中，所述下部散热部的杆件排布于与所述上部封装部的贯通孔对应的位置。3 . The power module package of claim 1 , wherein the rods of the lower heat dissipation part are arranged at positions corresponding to the through holes of the upper package part. 4 . 4.如权利要求1所述的功率模块封装件，其中，所述半导体芯片或散热基板通过导电性引线而与所述引线框架电连接。4. The power module package of claim 1, wherein the semiconductor chip or the heat dissipation substrate is electrically connected to the lead frame through conductive leads. 5.如权利要求1所述的功率模块封装件，其中，所述注塑成型部件不密封所述散热基板的下表面。5. The power module package of claim 1, wherein the injection molded part does not seal the lower surface of the heat dissipation substrate. 6.如权利要求1所述的功率模块封装件，其中，所述上部封装件的贯通孔通过将所述散热基板的第一贯通孔与所述注塑成型部件的第二贯通孔对准为一条直线而形成。6 . The power module package of claim 1 , wherein the through hole of the upper package is formed by aligning the first through hole of the heat dissipation substrate with the second through hole of the injection molding part. 7 . formed by a straight line. 7.如权利要求1所述的功率模块封装件，其中，所述下部散热部由散热器构成，且所述下部散热部的主体在下部具有多个散热翅片。7 . The power module package of claim 1 , wherein the lower heat dissipation portion is constituted by a heat sink, and the main body of the lower heat dissipation portion has a plurality of heat dissipation fins at a lower portion. 8 . 8.一种功率模块封装件的制作方法，包括如下步骤：8. A method for making a power module package, comprising the steps of: 第一步骤，提供沿厚度方向形成有一个以上的第一贯通孔的散热基板；The first step is to provide a heat dissipation substrate with more than one first through hole formed along the thickness direction; 第二步骤，将所述散热基板装载于模具的下部注塑模；In the second step, the heat dissipation substrate is loaded on the lower injection mold of the mold; 第三步骤，将所述模具的上部注塑模设置于所述下部注塑模上；The third step is to set the upper injection mold of the mold on the lower injection mold; 第四步骤，将注塑成型材料注入到所述模具内而形成上部封装部；the fourth step, injecting the injection molding material into the mold to form the upper encapsulation part; 第五步骤，将所述上部封装部与下部散热部进行组装，The fifth step is to assemble the upper encapsulation part and the lower heat dissipation part, 在所述第四步骤中，所述注塑成型部件沿该注塑成型部件的厚度方向形成第二贯通孔，In the fourth step, the injection-molded part forms a second through hole along the thickness direction of the injection-molded part, 所述下部散热部包括：主体，具有平整的上部；多个散热翅片，配备于所述主体的下部；一个以上的杆件，在所述主体的上部朝竖直方向延伸，The lower heat dissipation part includes: a main body with a flat upper part; a plurality of heat dissipation fins arranged on the lower part of the main body; one or more rods extending in the vertical direction on the upper part of the main body, 在所述第五步骤中，所述下部散热部的杆件以过盈插入方式插穿到所述第一贯通孔和所述第二贯通孔。In the fifth step, the rod of the lower heat dissipation part is inserted into the first through hole and the second through hole in an interference insertion manner. 9.如权利要求8所述的功率模块封装件的制作方法，其中，所述模具包括：9. The method for fabricating a power module package according to claim 8, wherein the mold comprises: 下部注塑模，具有朝竖直上方突出的一个以上的引导销；a lower injection mold with one or more guide pins protruding vertically upward; 上部注塑模，具有与所述下部注塑模的引导销对应地朝竖直下方突出的一个以上的引导销。The upper injection mold has one or more guide pins protruding vertically downward corresponding to the guide pins of the lower injection mold. 10.如权利要求8所述的功率模块封装件的制作方法，其中，在所述第二步骤中，所述下部注塑模的引导销插穿于所述散热基板的第一贯通孔。10 . The method for manufacturing a power module package according to claim 8 , wherein, in the second step, the guide pins of the lower injection mold are inserted into the first through holes of the heat dissipation substrate. 11 . 11.如权利要求8所述的功率模块封装件的制作方法，其中，在所述第二步骤中，所述散热基板的下表面排布为与所述下部注塑模形成面接触。11 . The method of manufacturing a power module package according to claim 8 , wherein, in the second step, the lower surface of the heat dissipation substrate is arranged to be in surface contact with the lower injection mold. 12 . 12.如权利要求9所述的功率模块封装件的制作方法，其中，在所述第三步骤中，使所述下部注塑模的引导销与所述上部注塑模的引导销相互沿一条直线配合。12 . The method for manufacturing a power module package according to claim 9 , wherein, in the third step, the guide pins of the lower injection mold and the guide pins of the upper injection mold are matched with each other along a straight line. 13 . . 13.如权利要求8所述的功率模块封装件的制作方法，其中，所述散热基板的第一贯通孔与所述注塑成型部件的第二贯通孔沿一条直线对准。13 . The method for manufacturing a power module package according to claim 8 , wherein the first through hole of the heat dissipation substrate and the second through hole of the injection molding component are aligned along a straight line. 14 . 14.如权利要求9所述的功率模块封装件的制作方法，其中，所述下部注塑模的引导销在上端部具有结合槽，而上部注塑模的引导销在下端部具有结合突起。14 . The method of manufacturing a power module package as claimed in claim 9 , wherein the guide pins of the lower injection mold have coupling grooves at the upper end, and the guide pins of the upper injection mold have coupling protrusions at the lower end. 15 .
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