WO2020220590A1 - Intelligent power module and air conditioner - Google Patents

Abstract

An intelligent power module (100) and an air conditioner. The intelligent power module (100) comprises: a substrate (10), a control chip (20) arranged on the substrate (10), and an inverter circuit (30) arranged on the substrate (10), wherein the inverter circuit (30) comprises three groups of inverter modules, each group of inverter modules comprises a first GaN HEMT transistor (T11, T12, T13) and a second GaN HEMT transistor (T21, T22, T23), a drain electrode of the first GaN HEMT transistor (T11, T12, T13) is connected to a high-voltage input end (P) on the substrate, a source electrode of the first GaN HEMT transistor (T11, T12, T13) is connected to a drain electrode of the second GaN HEMT transistor (T21, T22, T23), a source electrode of the second GaN HEMT transistor (T21, T22, T23) is connected to a low-voltage reference end (UN, VN, WN) on the substrate, and a gate electrode of the first GaN HEMT transistor (T11, T12, T13) and a gate electrode of the second GaN HEMT transistor (T21, T22, T23) are both connected to the control chip (20). Therefore, by using the GaN HEMT transistor in the inverter circuit (30), there is no need to add parallel diodes; in addition, since the charges in the gate electrode of the GaN HEMT transistor are much less than those of an IGBT, the gate electrode of the GaN HEMT transistor is protected without the need to connect to a resistor, such that the circuit can be simplified.

Description

Smart power module and air conditioner

Cross references to related applications

This application is based on a Chinese patent application with application numbers 201910356450.7 and 201920610099.5, and the filing date is April 29, 2019, and claims the priority of the above-mentioned Chinese patent application. The entire content of the above-mentioned Chinese patent application is hereby incorporated by reference into this application.

Technical field

This application relates to the technical field of household appliances, in particular to an intelligent power module and an air conditioner.

Background technique

IPM (Intelligent Power Module) is a power drive product that combines power electronics and integrated circuit technology. It has won an increasingly large market with its advantages of high integration and high reliability. It is especially suitable for The frequency converter of the drive motor and various inverter power supplies are ideal power electronic devices for frequency conversion speed regulation, metallurgical machinery, electric traction, servo drives, and frequency conversion household appliances.

In related technologies, power electronic devices in IPM often use IGBT tubes. However, the related technology has a problem in that because the gate charge of the IGBT tube is large, the gate needs to be connected with a resistor for protection during use. In addition, The use of IGBT tubes also requires an external parallel diode FRD, which leads to complex circuits and higher costs.

Summary of the invention

This application aims to solve one of the technical problems in the related technology at least to a certain extent. To this end, the first purpose of this application is to propose an intelligent power module that integrates the control chip and the inverter circuit on the substrate, which not only saves the cost of packaging, but also reduces the exposed electrical connection points, and at the same time The use of GaN HEMT tubes in the inverter circuit can also simplify the circuit.

The second purpose of this application is to propose an air conditioner.

In order to achieve the above objective, an embodiment of the first aspect of the present application proposes an intelligent power module, including: a substrate; a control chip provided on the substrate; an inverter circuit provided on the substrate, the inverter The variable circuit includes three groups of inverter modules, each group of inverter modules includes a first GaN HEMT tube and a second GaN HEMT tube, wherein the drain of the first GaN HEMT tube is connected to the high-voltage input terminal on the substrate, The source of the first GaN HEMT tube is connected to the drain of the second GaN HEMT tube, the source of the second GaN HEMT tube is connected to the low-voltage reference terminal on the substrate, and the first GaN HEMT tube The gate of the HEMT tube and the gate of the second GaN HEMT tube are both connected to the control chip.

The smart power module of the embodiment of the present application integrates the control chip and the inverter circuit on the substrate, which can not only save the packaging cost, but also reduce the exposed electrical connection points. At the same time, GaN HEMT tubes are used in the inverter circuit. There is no need to add a parallel diode. In addition, because the gate charge of the GaN HEMT tube is far less than that of the IGBT tube, the gate does not need to be connected to the resistor for protection, which can simplify the circuit.

According to an embodiment of the present application, each group of inverter modules further includes: a first capacitor, one end of the first capacitor is connected to the drain of the first GaN HEMT tube, and the other end of the first capacitor Connected to the source of the second GaN HEMT tube.

According to an embodiment of the present application, each group of inverter modules further includes: a second capacitor, one end of the second capacitor is connected to the first level end of the control chip and serves as a high voltage area on the substrate for power supply Power supply positive terminal, the other end of the second capacitor is connected to the source of the first GaN HEMT tube and the drain of the second GaN HEMT tube, and the other end of the second capacitor is also connected to the control The second level terminal of the chip is connected and serves as the negative terminal of the power supply in the high voltage area on the substrate.

According to an embodiment of the present application, the smart power module further includes: a power factor correction PFC circuit provided on the substrate, and the power factor correction PFC circuit includes a third GaN HEMT tube and a PFC diode, wherein , The cathode of the PFC diode is connected to the drain of the first GaN HEMT tube and the high-voltage input terminal on the substrate, the drain of the third GaN HEMT tube is connected to the anode of the PFC diode, so The drain of the third GaN HEMT tube is also connected to the PFC inductor connection terminal on the substrate, and the source of the third GaN HEMT tube is connected to the PFC negative terminal on the substrate.

According to an embodiment of the present application, the power factor correction PFC circuit further includes a third capacitor, and one end of the third capacitor is connected to the drain of the third GaN HEMT tube and the PFC inductor on the substrate. Connected, the other end of the third capacitor is connected to the source electrode of the third GaN HEMT tube and the negative end of the PFC on the substrate.

According to an embodiment of the present application, the power supply terminal of the control chip is connected to the first level terminal of the control chip through a diode, wherein the anode of the diode is connected to the power supply terminal of the control chip, and the diode The cathode is connected to the first level terminal of the control chip.

According to an embodiment of the present application, the power supply terminal of the control chip is used to connect an external power supply.

According to an embodiment of the present application, the control chip is further connected to an air conditioner controller, and the control chip further generates an inverter drive signal according to the inverter control signal generated by the air conditioner controller to drive each group of inverters. The first GaN HEMT tube and the second GaN HEMT tube in the module.

According to an embodiment of the present application, the control chip further generates a PFC drive signal according to the PFC control signal generated by the air conditioner controller to drive the third GaN HEMT tube in the power factor correction PFC circuit.

To achieve the foregoing objective, an embodiment of the second aspect of the present application proposes an air conditioner, which includes the foregoing smart power module.

The air conditioner of the embodiment of the present application adopts the above-mentioned intelligent power module and integrates the control chip and the inverter circuit on the substrate, which not only saves the cost of packaging, but also reduces the exposed electrical connection points, and at the same time, the inverter circuit GaN HEMT tube is used in GaN HEMT tube, no external parallel diode is required. In addition, since the gate charge of GaN HEMT tube is much less than that of IGBT tube, the gate does not need to be connected to a resistor for protection, which can simplify the circuit.

Description of the drawings

Fig. 1 is a schematic block diagram of an intelligent power module according to an embodiment of the present application;

Fig. 2 is a schematic block diagram of an intelligent power module according to an embodiment of the present application;

Fig. 3 is a schematic circuit diagram of a smart power module according to an embodiment of the present application;

Fig. 4 is a schematic circuit diagram of a smart power module according to another embodiment of the present application.

Detailed ways

The embodiments of the present application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals indicate the same or similar elements or elements with the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary, and are intended to explain the application, but should not be understood as a limitation to the application.

The smart power module and the air conditioner in the embodiments of the present application are described below with reference to the drawings.

Fig. 1 is a block diagram of an intelligent power module according to an embodiment of the present application. As shown in FIG. 1, the smart power module 100 of the embodiment of the present application includes: a substrate 10, a control chip 20 and an inverter circuit 30.

Among them, the control chip 20 is arranged on the substrate 10; the inverter circuit 30 is arranged on the substrate 10.

As shown in Figs. 3-4, the inverter circuit 30 includes three groups of inverter modules. Each group of inverter modules includes a first GaN HEMT tube and a second GaN HEMT tube. The drain of the first GaN HEMT tube is connected to the substrate 10 The source of the first GaN HEMT tube is connected to the drain of the second GaN HEMT tube, and the source of the second GaN HEMT tube is connected to the low voltage reference terminal on the substrate 10. The first GaN HEMT tube The gate of the GaN HEMT tube and the gate of the second GaN HEMT tube are both connected to the control chip 20.

Among them, the three groups of inverter modules correspond to the U, V, and W phases of the smart power module 100 respectively.

Therefore, by integrating the control chip and the inverter circuit on the substrate, not only can the packaging cost be saved, but also the exposed electrical connection points can be reduced. At the same time, the GaN HEMT tube is used in the inverter circuit to replace the IGBT in the related technology. The gate of the first GaN HEMT tube and the gate of the second GaN HEMT tube can be directly connected to the control chip 20 without connecting to the control chip 20 through a resistor for protection. In addition, due to the Due to the two-dimensional electron gas characteristics, the first GaN HEMT tube and the second GaN HEMT tube no longer need to connect the diode FRD in parallel, thereby simplifying the circuit.

Specifically, as shown in Figure 3-4, the first group of inverter modules includes a first GaN HEMT tube T11 and a second GaN HEMT tube T21, and the second group of inverter modules includes a first GaN HEMT tube T12 and a second GaN tube. HEMT tube T22, the third group of inverter modules includes a first GaN HEMT tube T13 and a second GaN HEMT tube T23.

Among them, the drain of the first GaN HEMT tube T11 of the first group of inverter modules, the drain of the first GaN HEMT tube T12 of the second group of inverter modules, and the drain of the first GaN HEMT tube T13 of the third group of inverter modules The drains are connected together and connected to the high-voltage input terminal P on the substrate 10.

It should be noted that the high voltage input terminal P on the substrate 10 can be connected to 300V.

The source of the first GaN HEMT tube T11 of the first group of inverter modules is connected to the drain of the second GaN HEMT tube T21, and the source of the first GaN HEMT tube T12 of the second group of inverter modules is connected to the second GaN HEMT tube The drain of T22 is connected, and the source of the first GaN HEMT tube T13 of the third group of inverter modules is connected to the drain of the second GaN HEMT tube T23.

The source of the second GaN HEMT tube T21 of the first group of inverter modules is connected to the low voltage reference terminal UN on the substrate 10, and the source of the second GaN HEMT tube T22 of the second group of inverter modules is connected to the low voltage reference terminal UN on the substrate 10. The voltage reference terminal VN is connected, and the source of the second GaN HEMT tube T23 of the third group of inverter modules is connected to the low voltage reference terminal WN on the substrate 10.

The gate of the first GaN HEMT tube T11 of the first group of inverter modules is connected to the high-voltage region output terminal HO1 on the control chip 20, and the gate of the first GaN HEMT tube T12 of the second group of inverter modules is connected to the control chip 20 The high-voltage zone output terminal HO2 of the inverter module of the third group is connected to the gate of the first GaN HEMT tube T13 of the third group of inverter module is connected to the high-voltage zone output terminal HO3 of the control chip 20, and the second GaN HEMT tube T21 of the first group of inverter module The gate is connected to the low-voltage area output terminal LO1 on the control chip 20, the gate of the second GaN HEMT tube T22 of the second group of inverter modules is connected to the low-voltage area output terminal LO2 on the control chip 20, and the third group of inverters The gate of the second GaN HEMT tube T23 of the module is connected to the low-voltage area output terminal LO3 on the control chip 20.

Further, according to an embodiment of the present application, as shown in FIG. 3-4, each group of inverter modules further includes: a first capacitor, one end of the first capacitor is connected to the drain of the first GaN HEMT tube, and the first capacitor The other end is connected to the source of the second GaN HEMT tube.

Specifically, as shown in Figure 3-4, the first group of inverter modules includes a first capacitor C11, one end of the first capacitor C11 is connected to the drain of the first GaN HEMT tube, that is, to the high-voltage input terminal on the substrate 10 P is connected, and the other end of the first capacitor C11 is connected to the source of the second GaN HEMT tube T21 of the first group of inverter modules, that is, connected to the low voltage reference terminal UN on the substrate 10.

The second group of inverter modules includes a first capacitor C12. One end of the first capacitor C12 is connected to the drain of the first GaN HEMT tube, that is, connected to the high-voltage input terminal P on the substrate 10, and the other end of the first capacitor C12 is connected to the The sources of the second GaN HEMT tubes T22 of the two groups of inverter modules are connected, and the low voltage reference terminal VN on the substrate 10 is connected.

The third group of inverter modules includes a first capacitor C13. One end of the first capacitor C13 is connected to the drain of the first GaN HEMT tube, that is, connected to the high-voltage input terminal P on the substrate 10, and the other end of the first capacitor C13 is connected to the The sources of the second GaN HEMT tubes T23 of the three groups of inverter modules are connected, and the low voltage reference terminal WN on the substrate 10 is connected.

It can be understood that because the first GaN HEMT tube and the second GaN HEMT tube are more sensitive to the noise of the peripheral circuit during use, the input signal can be filtered by setting the first capacitor, thereby solving the problem of using the GaN HEMT tube. The problem of high frequency noise in the process. Specifically, the first capacitor C11 is used to filter the U phase, the first capacitor C12 is used to filter the V phase, and the first capacitor C13 is used to filter the W phase.

Further, according to an embodiment of the present application, as shown in FIGS. 3-4, each group of inverter modules further includes: a second capacitor, one end of the second capacitor is connected to the first level terminal of the control chip 20 and serves as the substrate 10 The positive terminal of the high-voltage area power supply on the upper side, the other end of the second capacitor is connected to the source of the first GaN HEMT tube and the drain of the second GaN HEMT tube, and the other end of the second capacitor is also connected to the second terminal of the control chip 20. The level terminal is connected and serves as the negative terminal of the power supply in the high voltage area on the substrate 10.

Among them, the second capacitor is used to filter the power supply in the high voltage area.

Specifically, as shown in FIG. 3-4, the first group of inverter modules includes a second capacitor C21, one end of the second capacitor C21 is connected to the first level terminal VB1 of the control chip 20 and serves as a high voltage area on the substrate 10 for power supply The positive terminal UVB of the power supply, the other end of the second capacitor C21 is connected to the source of the first GaN HEMT tube T11 and the drain of the second GaN HEMT tube T21 of the first group of inverter modules. The other end of the second capacitor C21 is also It is connected to the second level terminal VS1 of the control chip 20 and serves as the negative terminal UVS of the power supply in the high voltage area on the substrate 10.

The second group of inverter modules includes a second capacitor C22. One end of the second capacitor C22 is connected to the first level terminal VB2 of the control chip 20 and serves as the positive terminal VVB of the high-voltage area power supply on the substrate 10, and the other end of the second capacitor C22 The source of the first GaN HEMT tube T12 and the drain of the second GaN HEMT tube T22 of the second group of inverter modules are both connected, and the other end of the second capacitor C22 is also connected to the second level terminal VS2 of the control chip 20. As the negative terminal VVS of the power supply in the high voltage area on the substrate 10.

The third group of inverter modules includes a second capacitor C23. One end of the second capacitor C23 is connected to the first level terminal VB3 of the control chip 20 and serves as the positive terminal WVB of the high-voltage area power supply on the substrate 10, and the other end of the second capacitor C23 The source of the first GaN HEMT tube T13 and the drain of the second GaN HEMT tube T23 of the third group of inverter modules are both connected, and the other end of the second capacitor C23 is also connected to the second level terminal VS3 of the control chip 20. As the negative terminal WVS of the power supply in the high voltage area on the substrate 10.

Further, according to an embodiment of the present application, as shown in FIGS. 2-3, the smart power module 100 further includes: a power factor correction PFC circuit 40 disposed on the substrate 10, and the power factor correction PFC circuit 40 includes a third GaN The HEMT tube T3 and the PFC diode D1, wherein the cathode of the PFC diode D1 is connected to the drain of the first GaN HEMT tube and the high voltage input terminal P on the substrate 10, and the drain of the third GaN HEMT tube T3 is connected to the drain of the PFC diode D1. The anode is connected, the drain of the third GaN HEMT tube T3 is also connected to the PFC inductor connection terminal PFC1 on the substrate 10, and the source of the third GaN HEMT tube T3 is connected to the PFC negative terminal -VP on the substrate 10.

In addition, because the GaN HEMT tube is used, its gate charge is less, so the gate of the third GaN HEMT tube T3 can be directly connected to the PFC output terminal PFCOUT, and it is no longer necessary to connect to the PFC output terminal PFCOUT through a resistor for protection. Thereby simplifying the circuit and saving cost.

Further, according to an embodiment of the present application, as shown in FIG. 3, the power factor correction PFC circuit 40 further includes a third capacitor C3, one end of the third capacitor C3 and the drain of the third GaN HEMT tube T3 and the substrate 10 The PFC inductor connection terminals PFC1 of the PFC are all connected, and the other end of the third capacitor C3 is connected to the source of the third GaN HEMT tube T3 and the PFC negative terminal -VP on the substrate 10.

Wherein, the third capacitor C3 is used to filter the signal of the input power factor correction PFC circuit 40.

Further, according to an embodiment of the present application, as shown in FIGS. 3-4, the power supply terminal of the control chip 20 is connected to the first level terminal of the control chip 20 through a diode, wherein the anode of the diode is connected to the power supply of the control chip 20 The cathode of the diode is connected to the first level terminal of the control chip 20. The power supply terminal of the control chip 20 is used to connect an external power supply.

Specifically, as shown in FIGS. 3-4, the power supply terminal VCC of the control chip 20 is connected to the first level terminal VB1 of the control chip 20 through a diode D2, wherein the anode of the diode D2 is connected to the power supply terminal VCC of the control chip 20 , The cathode of the diode D2 is connected to the first level terminal VB1 of the control chip 20.

The power supply terminal VCC of the control chip 20 is connected to the first level terminal VB2 of the control chip 20 through a diode D3. The anode of the diode D3 is connected to the power supply terminal VCC of the control chip 20, and the cathode of the diode D3 is connected to the first level terminal VB2 of the control chip 20. The level terminal VB2 is connected.

The power supply terminal VCC of the control chip 20 is connected to the first level terminal VB3 of the control chip 20 through a diode D4. The anode of the diode D4 is connected to the power supply terminal VCC of the control chip 20, and the cathode of the diode D4 is connected to the first level terminal VB3 of the control chip 20. The level terminal VB3 is connected.

It can be understood that the power supply terminal VCC is the positive terminal of the power supply of the control chip 20, and is connected to an external power source through the positive terminal VDD of the power supply on the substrate 10. As shown in Figs. 3-4, the control chip 20 also has a ground terminal GND. The ground terminal GND is the negative terminal of the power supply of the control chip 20, and is connected to the negative terminal COM of the power supply in the low-voltage area on the substrate 10. The voltage between the power supply terminal VCC and the ground GND may be 15V.

Further, according to an embodiment of the present application, the control chip 20 also generates a PFC driving signal according to the PFC control signal generated by the air conditioner controller to drive the third GaN HEMT tube T3 in the power factor correction PFC circuit 40.

It can be understood that, as shown in FIG. 3, the control chip 20 receives the PFC control signal generated by the air conditioner controller through the PFCIN pin provided on the substrate 10. The PFC control signal is transmitted to the PFC output terminal through the PFC input terminal PFCINP on the control chip 20 PGCOUT outputs a PFC drive signal to drive the third GaN HEMT tube T3 to be turned on or off.

It should be noted that the PFC control signal can be a 0 or 5V logic input signal, and the PFC drive signal can be a 0 or 15V logic output signal.

Furthermore, according to an embodiment of the present application, the control chip 20 is also connected to an air conditioner controller, and the control chip 20 also generates an inverter drive signal according to an inverter control signal generated by the air conditioner controller to drive each group of inverter modules The first GaN HEMT tube and the second GaN HEMT tube.

It can be understood that, as shown in Figures 3-4, the control chip 20 receives six inverter control signals generated by the air conditioner controller through the UHIN, VHIN, WHIN, ULIN, VLIN and WLIN pins provided on the substrate 10. The signal passes through the input terminals HIN1, HIN2, HIN3 and LIN1, LIN2, and LIN3 on the control chip 20 to the high-voltage zone output terminals HO1, HO2, HO3 and the low-voltage zone output terminals LO1, LO2, LO3 to output inverter drive signals, thereby Correspondingly drive the first GaN HEMT tubes T11, T12, T13 and the second GaN HEMT tubes T21, T22, T23 to turn on or off, and then the high-quality DC power corrected by the power factor correction PFC circuit 40 can be inverted into AC power To drive the operation of, for example, compressors or fans.

It should be noted that the six inverter control signals can be 0 or 5V logic input signals. The inverter drive signal output by the output terminal HO1 of the high voltage zone can be the voltage of the second level terminal VS1 or the voltage of the second level terminal VS1 plus a 15V logic output signal. The inverter drive signal output by the output terminal HO2 of the high voltage zone can be the first The voltage of the two-level terminal VS2 or the voltage of the second-level terminal VS2 plus a 15V logic output signal, the inverter drive signal output by the high-voltage area output terminal HO3 can be the voltage of the second-level terminal VS3 or the voltage of the second-level terminal VS3 In addition to the 15V logic output signal, the inverter drive signal output by the low-voltage zone output terminal LO1, the low-voltage zone output terminal LO2, and the low-voltage zone output terminal LO3 can be 0 or 15V logic output signals.

It should also be noted that the input signal of the same phase cannot be high at the same time, that is, the input terminal HIN1 and the input terminal LIN1 on the control chip 20 cannot be high at the same time, and the input terminal HIN2 and the input terminal LIN2 cannot be high at the same time. The signal input from the input terminal HIN3 and the input terminal LIN3 cannot be high level at the same time, that is, the first GaN HEMT tube and the second GaN HEMT tube of each group of inverter modules are not simultaneously turned on.

In addition, the smart power module of the embodiment of the present application also has the functions of overcurrent protection, overvoltage protection, and temperature detection.

Wherein, current sampling units such as sampling resistors can be provided in the inverter circuit 30 and the power factor correction PFC circuit 40 to sample the current flowing through the source of each GaN HEMT tube in the inverter circuit 30 and the power factor correction PFC circuit 40, To get the overcurrent protection signal.

In addition, the overcurrent protection pin ITRIP of the control chip 20 is also connected to the overcurrent protection pin MTRIP on the substrate 10, and the control chip 20 can receive the overcurrent protection signal through the overcurrent protection pin MTRIP on the substrate 10. The current protection signal performs overcurrent protection on the inverter circuit 30, for example, controlling the first GaN HEMT tubes T11, T12, T13 and the second GaN HEMT tubes T21, T22, and T23 to turn off. The overcurrent protection signal is used to indicate that the current flowing through the inverter circuit 30 is greater than the current threshold.

The voltage comparison circuit can be set in the integrated circuit to compare the voltage in the actual circuit with the reference voltage, which can realize the overvoltage protection of the entire circuit.

A temperature detection unit such as a thermistor can be provided on the substrate 10, wherein one end of the temperature detection unit is connected to a temperature sensing pin on the substrate 10, and the other end of the temperature detection unit is grounded. The temperature detection unit can detect the temperature of the substrate 10. For example, when the temperature on the substrate 10 changes, the resistance of the thermistor will change, so that the voltage at the temperature sensing pin will change. The voltage can obtain the temperature of the substrate 10, thereby realizing the temperature detection function.

In summary, according to the smart power module proposed in the embodiments of the present application, the control chip and the inverter circuit are integrated and arranged on the substrate. The inverter circuit includes three groups of inverter modules, and each group of inverter modules includes the first GaN HEMT tube and The second GaN HEMT tube, where the drain of the first GaN HEMT tube is connected to the high-voltage input terminal on the substrate, the source of the first GaN HEMT tube is connected to the drain of the second GaN HEMT tube, and the second GaN HEMT tube The source electrode is connected to the low-voltage reference terminal on the substrate, and the gate of the first GaN HEMT tube and the gate of the second GaN HEMT tube are both connected to the control chip. Therefore, the smart power module of the embodiment of the present application integrates the control chip and the inverter circuit on the substrate, which not only saves the cost of packaging, but also reduces the exposed electrical connection points. At the same time, GaN is used in the inverter circuit. The HEMT tube does not need an external parallel diode. In addition, because the gate charge of the GaN HEMT tube is much less than that of the IGBT tube, the gate does not need to be connected to the resistor for protection, which can simplify the circuit.

Based on the smart power module of the foregoing embodiment, an embodiment of the present application also proposes an air conditioner, including the foregoing smart power module.

According to the air conditioner proposed in the embodiment of the present application, the control chip and the inverter circuit are integrated on the substrate through the intelligent power module, which can not only save the packaging cost, but also reduce the exposed electrical connection points, and at the same time The GaN HEMT tube is used in the variable circuit, and there is no need to add a parallel diode. In addition, because the gate charge of the GaN HEMT tube is much less than that of the IGBT tube, the gate does not need to be connected with a resistor for protection, which can simplify the circuit.

In the description of this application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " "Back", "Left", "Right", "Vertical", "Horizontal", "Top", "Bottom", "Inner", "Outer", "Clockwise", "Counterclockwise", "Axial", The orientation or positional relationship indicated by "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the application and simplifying the description, and does not indicate or imply the pointed device or element It must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the application.

In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present application, "a plurality of" means at least two, such as two, three, etc., unless specifically defined otherwise.

In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and other terms should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , Or integrated; it can be mechanically connected or electrically connected; it can be directly connected or indirectly connected through an intermediary, it can be the internal communication of two components or the interaction relationship between two components, unless otherwise specified The limit. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

In this application, unless expressly stipulated and defined otherwise, the “on” or “under” of the first feature on the second feature may be in direct contact with the first and second features, or indirectly through an intermediary. contact. Moreover, the "above", "above" and "above" of the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the level of the first feature is higher than the second feature. The “below”, “below” and “below” of the second feature of the first feature may mean that the first feature is directly below or obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.

In the description of this specification, descriptions with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean specific features described in conjunction with the embodiment or example , The structure, materials, or characteristics are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples and the characteristics of the different embodiments or examples described in this specification without contradicting each other.

Although the embodiments of the present application have been shown and described above, it can be understood that the above-mentioned embodiments are exemplary and should not be construed as limiting the present application. A person of ordinary skill in the art can comment on the foregoing within the scope of the present application. The embodiment undergoes changes, modifications, substitutions and modifications.

Claims (10)

1. An intelligent power module, characterized in that it includes:

   Substrate

   A control chip arranged on the substrate;

   An inverter circuit arranged on the substrate, the inverter circuit includes three groups of inverter modules, each group of inverter modules includes a first GaN HEMT tube and a second GaN HEMT tube, wherein the first GaN HEMT tube The drain of the tube is connected to the high-voltage input terminal on the substrate, the source of the first GaN HEMT tube is connected to the drain of the second GaN HEMT tube, and the source of the second GaN HEMT tube is connected to the The low voltage reference terminal on the substrate is connected, and the gate of the first GaN HEMT tube and the gate of the second GaN HEMT tube are both connected to the control chip.
2. The intelligent power module according to claim 1, wherein each group of inverter modules further comprises:

   A first capacitor, one end of the first capacitor is connected to the drain of the first GaN HEMT tube, and the other end of the first capacitor is connected to the source of the second GaN HEMT tube.
3. The intelligent power module according to claim 1, wherein each group of inverter modules further comprises:

   A second capacitor, one end of the second capacitor is connected to the first level terminal of the control chip and serves as the positive terminal of the power supply in the high voltage area on the substrate, and the other end of the second capacitor is connected to the first GaN The source of the HEMT tube and the drain of the second GaN HEMT tube are both connected, and the other end of the second capacitor is also connected to the second level terminal of the control chip and serves as the power supply for the high voltage area on the substrate Negative end.
4. The intelligent power module according to claim 1, further comprising:

   A power factor correction PFC circuit disposed on the substrate, the power factor correction PFC circuit includes a third GaN HEMT tube and a PFC diode, wherein the cathode of the PFC diode and the drain of the first GaN HEMT tube Are connected to the high-voltage input terminals on the substrate, the drain of the third GaN HEMT tube is connected to the anode of the PFC diode, and the drain of the third GaN HEMT tube is also connected to the PFC inductor on the substrate. The connection ends are connected, and the source of the third GaN HEMT tube is connected to the negative end of the PFC on the substrate.
5. The smart power module of claim 4, wherein the power factor correction PFC circuit further comprises a third capacitor, one end of the third capacitor is connected to the drain of the third GaN HEMT tube and the substrate The connecting ends of the PFC inductance are all connected, and the other end of the third capacitor is connected to the source electrode of the third GaN HEMT tube and the negative end of the PFC on the substrate.
6. The smart power module according to claim 3, wherein the power supply terminal of the control chip is connected to the first level terminal of the control chip through a diode, wherein the anode of the diode is connected to the power supply of the control chip The power terminal is connected, and the cathode of the diode is connected to the first level terminal of the control chip.
7. The intelligent power module according to claim 6, wherein the power supply terminal of the control chip is used to connect an external power source.
8. The smart power module of claim 4, wherein the control chip is further connected to an air conditioner controller, and the control chip further generates an inverter drive signal according to an inverter control signal generated by the air conditioner controller to Drive the first GaN HEMT tube and the second GaN HEMT tube in each group of inverter modules.
9. 8. The smart power module of claim 8, wherein the control chip further generates a PFC drive signal according to the PFC control signal generated by the air conditioner controller to drive the third GaN in the power factor correction PFC circuit HEMT tube.
10. An air conditioner, characterized by comprising the intelligent power module according to any one of claims 1-9.

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