CN110061632A - Intelligent power module and air conditioner - Google Patents
Intelligent power module and air conditioner Download PDFInfo
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- CN110061632A CN110061632A CN201910356456.4A CN201910356456A CN110061632A CN 110061632 A CN110061632 A CN 110061632A CN 201910356456 A CN201910356456 A CN 201910356456A CN 110061632 A CN110061632 A CN 110061632A
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- pfc
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- pipe
- control chip
- igbt pipe
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a kind of intelligent power module and air conditioners, wherein intelligent power module includes: substrate；Control chip on substrate is set；PFC pfc circuit on substrate is set, PFC pfc circuit includes GaN HEMT pipe and PFC diode, wherein, the cathode of PFC diode is connected with the high voltage input terminal on substrate, the drain electrode of GaN HEMT pipe is connected with the anode of PFC diode, the drain electrode of GaN HEMT pipe is also connected with the PFC inductance connection end on substrate, and the source electrode of GaN HEMT pipe is connected with the PFC negative terminal on substrate；Inverter circuit on substrate is set; inverter circuit is connected with the cathode of PFC diode; inverter circuit is also connected with control chip; as a result, by using GaN HEMT pipe as switching device in pfc circuit, it is not required to additional parallel diode; in addition; due also to the gate charge of GaN HEMT pipe is managed far fewer than IGBT, so its grid does not have to connection resistance and protected, and then circuit can be simplified.
Description
Technical field
The present invention relates to field of home appliance technology more particularly to a kind of intelligent power module and a kind of air conditioners.
Background technique
IPM (Intelligent Power Module, intelligent power module) is a kind of by power electronics and integrated circuit
The power drive class product that technology combines, and increasing market is won with advantages such as its high integration, high reliability, especially
It is suitable for the frequency converter and various inverters of driving motor, is frequency control, metallurgical machinery, electric propulsion, servo-drive, change
A kind of desired power level electronic device of frequency household electrical appliances.
In the related technology, power electronic devices is managed frequently with IGBT in IPM, and still, the relevant technologies have problems in that,
Since the gate charge of IGBT pipe is more, so in use, grid needs to connect resistance and is protected, in addition, making
Loong shunt diode FRD is also needed with IGBT pipe, so as to cause circuit complexity, cost is increased.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.
For this purpose, the first purpose of this invention is to propose a kind of intelligent power module, will control chip, pfc circuit and
Inverter circuit is integrally disposed on substrate, can not only save the cost of encapsulation, additionally it is possible to exposed electric connecting point is reduced,
Use GaN HEMT pipe as switching device in pfc circuit simultaneously, additionally it is possible to simplify circuit.
Second object of the present invention is to propose a kind of air conditioner.
In order to achieve the above object, first aspect present invention embodiment proposes a kind of intelligent power module, comprising: substrate；If
Set the control chip on the substrate；PFC pfc circuit on the substrate is set, the power because
Number correction pfc circuit includes GaN HEMT pipe and PFC diode, wherein on the cathode and the substrate of the PFC diode
High voltage input terminal is connected, and the drain electrode of the GaN HEMT pipe is connected with the anode of the PFC diode, the GaN HEMT pipe
Drain electrode is also connected with the PFC inductance connection end on the substrate, and the source electrode of the GaN HEMT pipe and the PFC on the substrate are born
End is connected；Inverter circuit on the substrate is set, and the inverter circuit is connected with the cathode of the PFC diode, institute
Inverter circuit is stated also to be connected with the control chip.
Control chip, pfc circuit and inverter circuit are integrated and are set by the intelligent power module proposed according to embodiments of the present invention
It sets on substrate, PFC pfc circuit includes GaN HEMT pipe and PFC diode, wherein the yin of PFC diode
Pole is connected with the high voltage input terminal on substrate, and the drain electrode of GaN HEMT pipe is connected with the anode of PFC diode, GaN HEMT pipe
Drain electrode is also connected with the PFC inductance connection end on substrate, and the source electrode of GaN HEMT pipe is connected with the PFC negative terminal on substrate, inversion
Circuit is connected with the cathode of PFC diode, and inverter circuit is also connected with control chip.The intelligent function of the embodiment of the present invention as a result,
Control chip, pfc circuit and inverter circuit are integrally disposed on substrate, can not only save the cost of encapsulation by rate module,
Exposed electric connecting point can also be reduced, while using GaN HEMT pipe as switching device in pfc circuit, is not required to additional
Parallel diode, in addition, due also to the gate charge of GaN HEMT pipe is managed far fewer than IGBT, so its grid does not have to connection resistance
It is protected, and then circuit can be simplified.
According to one embodiment of present invention, the PFC pfc circuit further includes third capacitor, the third
PFC inductance connection end in drain electrode and the substrate of the one end of capacitor with the GaN HEMT pipe is connected, the third electricity
The other end of appearance is connected with the PFC negative terminal on the source electrode and the substrate of the GaN HEMT pipe.
According to one embodiment of present invention, the inverter circuit includes three groups of inverter modules, and every group of inverter module includes
First IGBT pipe, the 2nd IGBT pipe, first fast recovery diode in parallel with the first IGBT pipe and with described second
Second fast recovery diode of IGBT pipe parallel connection, wherein the collector of the first IGBT pipe and the high pressure on the substrate are defeated
Enter end to be connected, the emitter of the first IGBT pipe is connected with the collector of the 2nd IGBT pipe, the 2nd IGBT pipe
Emitter is connected with the low reference voltage end on the substrate, and the grid of the first IGBT pipe passes through first resistor and the control
Coremaking piece is connected, and the grid of the 2nd IGBT pipe is connected by second resistance with the control chip.
According to one embodiment of present invention, every group of inverter module further include: first capacitor, the first capacitor
One end is connected with the first level terminal of the control chip and as the higher-pressure region power supply anode on the substrate, and described the
The other end of one capacitor is connected with the collector of the emitter of the first IGBT pipe and the 2nd IGBT pipe, and described first
The other end of capacitor is also connected and with the second electrical level end of the control chip as the higher-pressure region power supply on the substrate
Negative terminal.
According to one embodiment of present invention, the power supply end of the control chip connects the control by diode
First level terminal of chip, wherein the anode of the diode is connected with the power supply end of the control chip, two pole
The cathode of pipe is connected with the first level terminal of the control chip.
According to one embodiment of present invention, the power supply end of the control chip is for connecting external power supply.
According to one embodiment of present invention, the control chip is also connected with air-conditioner controller, and the control chip is also
Inversion driving signal is generated according to the inverter control signal that the air-conditioner controller generates, to drive in every group of inverter module
The first IGBT pipe and the 2nd IGBT pipe.
According to one embodiment of present invention, the control chip is controlled also according to the PFC that the air-conditioner controller generates
Signal generates PFC driving signal, to drive the GaN HEMT in the PFC pfc circuit to manage.
In order to achieve the above object, second aspect of the present invention embodiment proposes a kind of air conditioner, including first aspect present invention
Intelligent power module described in embodiment.
The air conditioner proposed according to embodiments of the present invention, by the intelligent power module of setting, by control chip, PFC electricity
Road and inverter circuit are integrally disposed on substrate, can not only save the cost of encapsulation, additionally it is possible to be reduced and exposed electrically be connected
Contact, while using GaN HEMT pipe as switching device in pfc circuit, it is not required to additional parallel diode, in addition, due also to
The gate charge of GaN HEMT pipe is managed far fewer than IGBT, so its grid does not have to connection resistance and protected, and then can simplify electricity
Road.
Detailed description of the invention
Fig. 1 is the block diagram according to the intelligent power module of the embodiment of the present invention；
Fig. 2 is the circuit diagram according to the intelligent power module of one embodiment of the invention.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
Below with reference to the accompanying drawings the intelligent power module and air conditioner of the embodiment of the present invention are described.
Fig. 1 is the block diagram according to the intelligent power module of the embodiment of the present invention.As shown in Figure 1, the present invention is implemented
The intelligent power module 100 of example includes: substrate 10, control chip 20, PFC pfc circuit 40 and inverter circuit 30.
Wherein, as shown in Figs. 1-2, control chip 20 is arranged on substrate 10；PFC pfc circuit 40 is arranged
On substrate 10, PFC pfc circuit 40 includes GaN HEMT pipe T3 and PFC diode D1, wherein bis- pole PFC
The cathode of pipe D1 is connected with the high voltage input terminal P on substrate 10, the drain electrode and the anode phase of PFC diode D1 of GaN HEMT pipe T3
Even, the drain electrode of GaN HEMT pipe T3 is also connected with the PFC inductance connection end PFC1 on substrate 10, the source electrode of GaN HEMT pipe T3 and
PFC negative terminal-VP on substrate 10 is connected；Inverter circuit 30 is arranged on substrate 10, inverter circuit 30 and PFC diode D1's
Cathode is connected, and inverter circuit 30 is also connected with control chip 20.
It is integrally disposed on substrate, can not only be saved by the way that chip, pfc circuit and inverter circuit will be controlled as a result,
The cost of encapsulation, additionally it is possible to reduce exposed electric connecting point, while use GaN HEMT pipe as derailing switch in pfc circuit
Part, gate charge is less, thus the grid of GaN HEMT pipe can directly with control chip 20 on PFC output end PFCOUT phase
Even, it is connected without passing through resistance again with the PFC output end PFCOUT controlled on chip 20 to be protected, in addition, due to GaN
The two-dimensional electron gas characteristic of HEMT pipe, GaN HEMT pipe no longer need parallel diode FRD, thus, can simplify circuit, save at
This.
As shown in Fig. 2, PFC pfc circuit 40 further includes third capacitor C3, one end of third capacitor C3 and GaN
The drain electrode of HEMT pipe T3 is connected with the PFC inductance connection end PFC1 on substrate 10, the other end and GaN of third capacitor C3
The source electrode of HEMT pipe T3 is connected with the PFC negative terminal-VP on substrate 10.
It is understood that since GaN HEMT pipe T3 is more sensitive to the noise of peripheral circuit in use, so passing through
Third capacitor C3 is set, the signal of input power factor correction pfc circuit 40 can be filtered, to solve GaN HEMT
The high frequency noise problem of pipe in use.
As shown in Fig. 2, inverter circuit 30 includes three groups of inverter modules, every group of inverter module includes the first IGBT pipe and second
IGBT pipe, first fast recovery diode in parallel with the first IGBT pipe and the in parallel with the 2nd IGBT pipe second two poles of fast recovery
Pipe, wherein the collector of the first IGBT pipe is connected with the high voltage input terminal on substrate 10, the emitter and second of the first IGBT pipe
The collector of IGBT pipe is connected, and the emitter of the 2nd IGBT pipe is connected with the low reference voltage end on substrate 10, the first IGBT pipe
Grid be connected by first resistor with control chip 20, the grid of the 2nd IGBT pipe passes through second resistance and controls 20 phase of chip
Even.
Specifically, as shown in Fig. 2, first group of inverter module include the first IGBT pipe T11 and the 2nd IGBT pipe T21, with
The first fast recovery diode D11 and in parallel with the 2nd IGBT pipe T21 second of first IGBT pipe T11 parallel connection restores two poles fastly
Pipe D21, second group of inverter module include the first IGBT pipe T12 and the 2nd IGBT pipe T22, in parallel with the first IGBT pipe T12
The one fast recovery diode D12 and second fast recovery diode D22 in parallel with the 2nd IGBT pipe T22, third group inverter module
Including the first IGBT pipe T13 and the 2nd IGBT pipe T23, the first fast recovery diode D13 in parallel with the first IGBT pipe T13 and
The second fast recovery diode D23 in parallel with the 2nd IGBT pipe T23.
Wherein, the first IGBT pipe of the collector of the first IGBT pipe T11 of first group of inverter module, second group of inverter module
The collector of first IGBT pipe T13 of the collector and third group inverter module of T12 links together, and on substrate 10
High voltage input terminal P is connected.
It should be noted that the high voltage input terminal P on substrate 10 can meet 300V.
The emitter of first IGBT pipe T11 of first group of inverter module is connected with the collector of the 2nd IGBT pipe T21, and second
The emitter of first IGBT pipe T12 of group inverter module is connected with the collector of the 2nd IGBT pipe T22, third group inverter module
The emitter of first IGBT pipe T13 is connected with the collector of the 2nd IGBT pipe T23.
The emitter of the 2nd IGBT pipe T21 of first group of inverter module is connected with the low reference voltage end UN on substrate 10,
The emitter of the 2nd IGBT pipe T22 of second group of inverter module is connected with the low reference voltage end VN on substrate 10, and third group is inverse
The emitter of the 2nd IGBT pipe T23 for becoming module is connected with the low reference voltage end WN on substrate 10.
The grid of first IGBT pipe T11 of first group of inverter module is by first resistor R11 and controls the height on chip 20
Pressure area output end HO1 is connected, and the grid of the first IGBT pipe T12 of second group of inverter module passes through first resistor R12 and control core
Higher-pressure region output end HO2 on piece 20 is connected, and the grid of the first IGBT pipe T13 of third group inverter module passes through first resistor
R13 is connected with the higher-pressure region output end HO3 on control chip 20, and the grid of the 2nd IGBT pipe T21 of first group of inverter module is logical
It crosses second resistance R21 and is connected with the low-pressure area output end LO1 controlled on chip 20, the 2nd IGBT pipe of second group of inverter module
The grid of T22 is connected by second resistance R22 with the low-pressure area output end LO2 controlled on chip 20, third group inverter module
The grid of 2nd IGBT pipe T23 is connected by second resistance R23 with the low-pressure area output end LO3 controlled on chip 20.
Further, according to one embodiment of present invention, as shown in Fig. 2, every group of inverter module further include: the first electricity
Hold, one end of first capacitor be connected with the first level terminal for controlling chip 20 and as the higher-pressure region power supply on substrate 10 just
End, the other end of first capacitor are connected with the collector of the emitter of the first IGBT pipe and the 2nd IGBT pipe, first capacitor
The other end is also connected and with the second electrical level end of control chip 20 as the higher-pressure region power supply negative terminal on substrate 10.
Wherein, first capacitor is used to be filtered higher-pressure region power supply.
Specifically, as shown in Fig. 2, first group of inverter module includes first capacitor C11, one end of first capacitor C11 with
The the first level terminal VB1 for controlling chip 20 is connected and as the higher-pressure region power supply anode UVB on substrate 10, first capacitor
The other end of C11 and the emitter of the first IGBT pipe T11 of first group of inverter module and the collector of the 2nd IGBT pipe T21 are homogeneous
Even, the other end of first capacitor C11 is also connected and with the second electrical level end VS1 of control chip 20 as the higher-pressure region on substrate 10
Power supply negative terminal UVS.
Second group of inverter module includes first capacitor C12, one end of first capacitor C12 and the first level of control chip 20
Hold VB2 to be connected and as the higher-pressure region power supply anode VVB on substrate 10, the other end of first capacitor C12 and second group it is inverse
The collector of the emitter and the 2nd IGBT pipe T22 that become the first IGBT pipe T12 of module is connected, and first capacitor C12's is another
End is also connected and with the second electrical level end VS2 of control chip 20 as the higher-pressure region power supply negative terminal VVS on substrate 10.
Third group inverter module includes first capacitor C13, one end of first capacitor C13 and the first level of control chip 20
End VB3 is connected and as the higher-pressure region power supply anode WVB on substrate 10, and the other end and third group of first capacitor C13 is inverse
The collector of the emitter and the 2nd IGBT pipe T23 that become the first IGBT pipe T13 of module is connected, and first capacitor C13's is another
End is also connected and with the second electrical level end VS3 of control chip 20 as the higher-pressure region power supply negative terminal WVS on substrate 10.
Further, according to one embodiment of present invention, as shown in Fig. 2, the power supply end of control chip 20 passes through
First level terminal of diode connection control chip 20, wherein the power supply end phase of the anode of diode and control chip 20
Even, the cathode of diode is connected with the first level terminal of control chip 20.Wherein, the power supply end of chip 20 is controlled for connecting
Connect external power supply.
Specifically, as shown in Fig. 2, the power supply end VCC of control chip 20 controls chip by diode D2 connection
20 the first level terminal VB1, wherein the anode of diode D2 is connected with the power supply end VCC of control chip 20, diode D2
Cathode with control chip 20 the first level terminal VB1 be connected.
The power supply end VCC for controlling chip 20 controls the first level terminal VB2 of chip 20 by diode D3 connection,
In, the anode of diode D3 is connected with the power supply end VCC of control chip 20, cathode and the control chip 20 of diode D3
First level terminal VB2 is connected.
The power supply end VCC for controlling chip 20 controls the first level terminal VB3 of chip 20 by diode D4 connection,
In, the anode of diode D4 is connected with the power supply end VCC of control chip 20, cathode and the control chip 20 of diode D4
First level terminal VB3 is connected.
It is understood that power supply end VCC is the power supply anode for controlling chip 20, and by substrate 10
Power supply anode VDD connection external power supply, as shown in Fig. 2, it is control that control chip 20, which also has ground terminal GND, ground terminal GND,
The power supply negative terminal of coremaking piece 20 is connected, wherein power supply end with the low-pressure area power supply negative terminal COM on substrate 10
Voltage between VCC and ground terminal GND can be 15V.
Further, according to one embodiment of present invention, control chip 20 is controlled also according to the PFC that air-conditioner controller generates
Signal processed generates PFC driving signal, with the GaN HEMT pipe T3 in driving power factor correcting pfc circuit 40.
It is understood that as shown in Fig. 2, control chip 20 receives airconditioning control by the PFCIN pin of setting on the substrate 10
The PFC that device generates controls signal, and PFC controls signal and passes to PFC output end by the PFC input terminal PFCINP on control chip 20
PGCOUT is to export PFC driving signal, to drive GaN HEMT pipe T3 on or off.
It should be noted that PFC control signal can be the logic input signal of 0 or 5V, PFC driving signal can be 0 or 15V
Logic output signal.
Further, according to one embodiment of present invention, control chip 20 is also connected with air-conditioner controller, controls core
Piece 20 generates inversion driving signal also according to the inverter control signal that air-conditioner controller generates, to drive in every group of inverter module
First IGBT pipe and the 2nd IGBT pipe.
It is understood that as shown in Fig. 2, control chip 20 by setting UHIN, VHIN on the substrate 10, WHIN, ULIN,
VLIN and WLIN pin receives the six road inverter control signals that air-conditioner controller generates, and six road inverter control signals pass through control core
Input terminal HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 on piece 20 pass to respectively higher-pressure region output end HO1, HO2, HO3 and
Low-pressure area output end LO1, LO2, LO3 to export inversion driving signal, thus the first IGBT pipe T11, T12, T13 of corresponding driving and
2nd IGBT pipe T21, T22, T23 on or off, and then can be by the high-quality after the correction of PFC pfc circuit 40
DC inverter be operating of the alternating current to drive such as compressor or blower.
It should be noted that six road inverter control signals can be the logic input signal of 0 or 5V.Higher-pressure region output end HO1
The inversion driving signal of output can be the logic that the voltage of second electrical level end VS1 or the voltage of second electrical level end VS1 add 15V
Output signal, the inversion driving signal of higher-pressure region output end HO2 output can be the voltage or second electrical level of second electrical level end VS2
The voltage of VS2 is held to add the logic output signal of 15V, the inversion driving signal of higher-pressure region output end HO3 output can be the second electricity
The voltage of the voltage of flush end VS3 or second electrical level end VS3 add the logic output signal of 15V, low-pressure area output end LO1, low
The inversion driving signal of pressure area output end LO2 and low-pressure area output end LO3 output can be the logic output signal of 0 or 15V.
It should be noted that the input signal of same phase cannot be high level simultaneously, that is, control the input terminal on chip 20
HIN1 and input terminal LIN1 cannot be that high level, input terminal HIN2 and input terminal LIN2 cannot be high level, input simultaneously simultaneously
The signal for holding HIN3 and input terminal LIN3 input cannot be high level simultaneously, that is to say, that the first IGBT of every group of inverter module
Pipe and the 2nd IGBT pipe cannot simultaneously turn on.
In addition, the intelligent power module of the embodiment of the present invention also has overcurrent protection, overvoltage protection and temperature detecting function.
It wherein, can be by the way that current sampling unit be arranged for example in inverter circuit 30 and PFC pfc circuit 40
Sampling resistor, to flowing through in inverter circuit 30, GaN HEMT is managed in each IGBT pipe emitter and PFC pfc circuit 40
The electric current of source electrode is sampled, to obtain overcurrent protection signal.
In addition, control chip 20 overcurrent protection pin ITRIP also with the overcurrent protection pin MTRIP phase on substrate 10
Even, control chip 20 can receive overcurrent protection signal by the overcurrent protection pin MTRIP on substrate 10, and according to overcurrent protection
Signal to inverter circuit 30 carry out overcurrent protection, such as control the first IGBT pipe T11, T12, T13 and the 2nd IGBT pipe T21,
T22, T23 are turned off.Wherein, overcurrent protection signal is used to indicate the electric current for flowing through inverter circuit 30 greater than current threshold.
The voltage in actual circuit can be compared with reference voltage by the way that voltage comparator circuit is arranged in integrated circuits
Compared with, it can be achieved that overvoltage protection to entire circuit.
It can be by the way that temperature detecting unit such as thermistor be arranged on the substrate 10, wherein one end of temperature detecting unit
It is connected with the temperature sense pin on substrate 10, the other end ground connection of temperature detecting unit.Temperature detecting unit can detect substrate
10 temperature, such as when temperature change on the substrate 10, the resistance value of thermistor will change, so that temperature sense draws
Voltage at foot changes, and the temperature of substrate 10 can be obtained by the voltage at detection temperature sense pin, and then realizes temperature
Spend detection function.
To sum up, the intelligent power module proposed according to embodiments of the present invention, by control chip, pfc circuit and inverter circuit
It is integrally disposed on substrate, PFC pfc circuit includes GaN HEMT pipe and PFC diode, wherein bis- pole PFC
The cathode of pipe is connected with the high voltage input terminal on substrate, and the drain electrode of GaN HEMT pipe is connected with the anode of PFC diode, GaN
The drain electrode of HEMT pipe is also connected with the PFC inductance connection end on substrate, the source electrode of GaN HEMT pipe and the PFC negative terminal phase on substrate
Even, inverter circuit is connected with the cathode of PFC diode, and inverter circuit is also connected with control chip.The embodiment of the present invention as a result,
Control chip, pfc circuit and inverter circuit are integrally disposed on substrate, can not only save encapsulation by intelligent power module
Cost, additionally it is possible to reduce exposed electric connecting point, while using in pfc circuit GaN HEMT pipe as switching device,
It is not required to additional parallel diode, in addition, due also to the gate charge of GaN HEMT pipe is managed far fewer than IGBT, so its grid does not have to
Connection resistance is protected, and then can simplify circuit.
Intelligent power module based on the above embodiment, the embodiment of the present invention also proposed a kind of air conditioner, including aforementioned
Intelligent power module.
The air conditioner proposed according to embodiments of the present invention, by the intelligent power module of setting, by control chip, PFC electricity
Road and inverter circuit are integrally disposed on substrate, can not only save the cost of encapsulation, additionally it is possible to be reduced and exposed electrically be connected
Contact, while using GaN HEMT pipe as switching device in pfc circuit, it is not required to additional parallel diode, in addition, due also to
The gate charge of GaN HEMT pipe is managed far fewer than IGBT, so its grid does not have to connection resistance and protected, and then can simplify electricity
Road.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the present invention, the meaning of " plurality " is at least two, such as two, three
It is a etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art
For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with
It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below "
One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (9)
1. a kind of intelligent power module characterized by comprising
Substrate；
Control chip on the substrate is set；
PFC pfc circuit on the substrate is set, and the PFC pfc circuit includes GaN
HEMT pipe and PFC diode, wherein the cathode of the PFC diode is connected with the high voltage input terminal on the substrate, described
The drain electrode of GaN HEMT pipe is connected with the anode of the PFC diode, and the drain electrode of the GaN HEMT pipe is also and on the substrate
PFC inductance connection end be connected, the source electrode of the GaN HEMT pipe is connected with the PFC negative terminal on the substrate；
Inverter circuit on the substrate is set, and the inverter circuit is connected with the cathode of the PFC diode, described inverse
Power transformation road is also connected with the control chip.
2. intelligent power module according to claim 1, which is characterized in that the PFC pfc circuit also wraps
Include third capacitor, the PFC inductance connection in the drain electrode and the substrate of one end of the third capacitor and the GaN HEMT pipe
End is connected, and the other end of the third capacitor and the PFC negative terminal on the source electrode and the substrate of the GaN HEMT pipe are homogeneous
Even.
3. intelligent power module according to claim 1, which is characterized in that the inverter circuit includes three groups of inversion moulds
Block, every group of inverter module include the first IGBT pipe, the 2nd IGBT pipe, the in parallel with the first IGBT pipe first two poles of fast recovery
Pipe and second fast recovery diode in parallel with the 2nd IGBT pipe, wherein the collector of the first IGBT pipe and institute
The high voltage input terminal stated on substrate is connected, and the emitter of the first IGBT pipe is connected with the collector of the 2nd IGBT pipe,
The emitter of the 2nd IGBT pipe is connected with the low reference voltage end on the substrate, and the grid of the first IGBT pipe passes through
First resistor is connected with the control chip, and the grid of the 2nd IGBT pipe passes through second resistance and the control chip phase
Even.
4. intelligent power module according to claim 3, which is characterized in that every group of inverter module further include:
First capacitor, one end of the first capacitor are connected and with the first level terminal of the control chip as on the substrate
Higher-pressure region power supply anode, the emitter and described second of the other end of the first capacitor and the first IGBT pipe
The collector of IGBT pipe is connected, and the other end of the first capacitor is also connected and makees with the second electrical level end of the control chip
For the higher-pressure region power supply negative terminal on the substrate.
5. intelligent power module according to claim 4, which is characterized in that the power supply end of the control chip passes through
Diode connects the first level terminal of the control chip, wherein the power supply of the anode of the diode and the control chip
Power end is connected, and the cathode of the diode is connected with the first level terminal of the control chip.
6. intelligent power module according to claim 5, which is characterized in that wherein, the power supply of the control chip
End is for connecting external power supply.
7. intelligent power module according to claim 4, which is characterized in that the control chip also with air-conditioner controller phase
Even, the control chip generates inversion driving signal also according to the inverter control signal that the air-conditioner controller generates, with driving
The first IGBT pipe and the 2nd IGBT pipe in every group of inverter module.
8. intelligent power module according to claim 7, which is characterized in that the control chip is also according to the air-conditioning control
The PFC control signal that device processed generates generates PFC driving signal, to drive the GaN in the PFC pfc circuit
HEMT pipe.
9. a kind of air conditioner, which is characterized in that including such as described in any item intelligent power module of claim 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910356456.4A CN110061632A (en) | 2019-04-29 | 2019-04-29 | Intelligent power module and air conditioner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910356456.4A CN110061632A (en) | 2019-04-29 | 2019-04-29 | Intelligent power module and air conditioner |
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| Publication Number | Publication Date |
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| CN110061632A true CN110061632A (en) | 2019-07-26 |
Family
ID=67321676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910356456.4A Pending CN110061632A (en) | 2019-04-29 | 2019-04-29 | Intelligent power module and air conditioner |
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| CN (1) | CN110061632A (en) |
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| CN102651388A (en) * | 2011-02-25 | 2012-08-29 | 富士通株式会社 | Method of producing semiconductor device and semiconductor device |
| CN107294362A (en) * | 2016-03-30 | 2017-10-24 | 苏州保尔迪瓦电子科技有限公司 | Spm |
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Application publication date: 20190726 |