CN109921675A - Intelligent power module and air conditioner - Google Patents
Intelligent power module and air conditioner Download PDFInfo
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- CN109921675A CN109921675A CN201910356450.7A CN201910356450A CN109921675A CN 109921675 A CN109921675 A CN 109921675A CN 201910356450 A CN201910356450 A CN 201910356450A CN 109921675 A CN109921675 A CN 109921675A
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- 239000000758 substrate Substances 0.000 claims abstract description 84
- 239000003990 capacitor Substances 0.000 claims description 54
- 238000004378 air conditioning Methods 0.000 claims description 2
- 102100038567 Properdin Human genes 0.000 description 37
- 238000005538 encapsulation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 230000036413 temperature sense Effects 0.000 description 3
- 101100277795 Arabidopsis thaliana PFC1 gene Proteins 0.000 description 2
- 102100027206 CD2 antigen cytoplasmic tail-binding protein 2 Human genes 0.000 description 2
- 101100181929 Caenorhabditis elegans lin-3 gene Proteins 0.000 description 2
- 101000914505 Homo sapiens CD2 antigen cytoplasmic tail-binding protein 2 Proteins 0.000 description 2
- 101000922137 Homo sapiens Peripheral plasma membrane protein CASK Proteins 0.000 description 2
- 101000739160 Homo sapiens Secretoglobin family 3A member 1 Proteins 0.000 description 2
- 102100031166 Peripheral plasma membrane protein CASK Human genes 0.000 description 2
- 102100037268 Secretoglobin family 3A member 1 Human genes 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 240000003550 Eusideroxylon zwageri Species 0.000 description 1
- 240000003864 Ulex europaeus Species 0.000 description 1
- 235000010730 Ulex europaeus Nutrition 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The invention discloses a kind of intelligent power module and air conditioners, wherein intelligent power module includes: substrate；Control chip on substrate is set；Inverter circuit on substrate is set, inverter circuit includes three groups of inverter modules, every group of inverter module includes the first GaN HEMT pipe and the 2nd GaN HEMT pipe, wherein, the drain electrode of first GaN HEMT pipe is connected with the high voltage input terminal on substrate, the source electrode of first GaN HEMT pipe is connected with the drain electrode of the 2nd GaN HEMT pipe, the source electrode of 2nd GaN HEMT pipe is connected with the low reference voltage end on substrate, the grid of first GaN HEMT pipe and the grid of the 2nd GaN HEMT pipe are connected with control chip, to, by using GaN HEMT to manage in inverter circuit, it is not required to additional parallel diode, in addition, due also to the gate charge of GaN HEMT pipe is managed far fewer than IGBT, so its grid does not have to connect Connecting resistance is protected, and then can simplify circuit.
Description
Technical field
The present invention relates to field of home appliance technology more particularly to a kind of intelligent power module and a kind of air conditioners.
Background technique
IPM (Intelligent Power Module, intelligent power module) is a kind of by power electronics and integrated circuit
The power drive class product that technology combines, and increasing market is won with advantages such as its high integration, high reliability, especially
It is suitable for the frequency converter and various inverters of driving motor, is frequency control, metallurgical machinery, electric propulsion, servo-drive, change
A kind of desired power level electronic device of frequency household electrical appliances.
In the related technology, power electronic devices is managed frequently with IGBT in IPM, and still, the relevant technologies have problems in that,
Since the gate charge of IGBT pipe is more, so in use, grid needs to connect resistance and is protected, in addition, making
Loong shunt diode FRD is also needed with IGBT pipe, so as to cause circuit complexity, cost is increased.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.
For this purpose, the first purpose of this invention is to propose a kind of intelligent power module, by control chip and inverter circuit
It is integrally disposed on substrate, the cost of encapsulation can not only be saved, additionally it is possible to reduce exposed electric connecting point, while inverse
It is managed in power transformation road using GaN HEMT, additionally it is possible to simplify circuit.
Second object of the present invention is to propose a kind of air conditioner.
In order to achieve the above object, first aspect present invention embodiment proposes a kind of intelligent power module, comprising: substrate；If
Set the control chip on the substrate；Inverter circuit on the substrate is set, and the inverter circuit includes three groups
Inverter module, every group of inverter module include the first GaN HEMT pipe and the 2nd GaN HEMT pipe, wherein the first GaN HEMT
The drain electrode of pipe is connected with the high voltage input terminal on the substrate, the source electrode and the 2nd GaN of the first GaN HEMT pipe
The drain electrode of HEMT pipe is connected, and the source electrode of the 2nd GaN HEMT pipe is connected with the low reference voltage end on the substrate, described
The grid of first GaN HEMT pipe and the grid of the 2nd GaN HEMT pipe are connected with the control chip.
Control chip and inverter circuit are integrally disposed in substrate by the intelligent power module proposed according to embodiments of the present invention
On, inverter circuit includes three groups of inverter modules, and every group of inverter module includes that the first GaN HEMT pipe and the 2nd GaN HEMT are managed,
Wherein, the drain electrode of the first GaN HEMT pipe is connected with the high voltage input terminal on substrate, the source electrode and second of the first GaN HEMT pipe
The drain electrode of GaN HEMT pipe is connected, and the source electrode of the 2nd GaN HEMT pipe is connected with the low reference voltage end on substrate, the first GaN
The grid of the grid of HEMT pipe and the 2nd GaN HEMT pipe is connected with control chip.The intelligent function of the embodiment of the present invention as a result,
Control chip and inverter circuit are integrally disposed on substrate, can not only save the cost of encapsulation, additionally it is possible to subtract by rate module
Few exposed electric connecting point, while being managed in inverter circuit using GaN HEMT, it is not required to additional parallel diode, in addition, also
Since the gate charge of GaN HEMT pipe is managed far fewer than IGBT, so its grid does not have to connection resistance and is protected, and then can letter
Change circuit.
According to one embodiment of present invention, every group of inverter module further include: first capacitor, the first capacitor
One end is connected with the drain electrode of the first GaN HEMT pipe, the other end of the first capacitor and the 2nd GaN HEMT pipe
Source electrode is connected.
According to one embodiment of present invention, every group of inverter module further include: the second capacitor, second capacitor
One end is connected with the first level terminal of the control chip and as the higher-pressure region power supply anode on the substrate, and described the
The other end of two capacitors is connected with the drain electrode of the source electrode and the 2nd GaN HEMT pipe of the first GaN HEMT pipe, described
The other end of second capacitor is also connected with the second electrical level end of the control chip and powers as the higher-pressure region on the substrate
Power supply negative terminal.
According to one embodiment of present invention, the intelligent power module, further includes: be arranged on the substrate
PFC pfc circuit, the PFC pfc circuit include the 3rd GaN HEMT pipe and PFC diode,
In, the high voltage input terminal in drain electrode and the substrate of the cathode of the PFC diode with the first GaN HEMT pipe is homogeneous
Even, the drain electrode of the 3rd GaN HEMT pipe is connected with the anode of the PFC diode, the drain electrode of the 3rd GaN HEMT pipe
Also it is connected with the PFC inductance connection end on the substrate, the source electrode of the 3rd GaN HEMT pipe and the PFC on the substrate are born
End is connected.
According to one embodiment of present invention, the PFC pfc circuit further includes third capacitor, the third
PFC inductance connection end in the drain electrode of one end of capacitor and the 3rd GaN HEMT pipe and the substrate is connected, and described the
The other end of three capacitors is connected with the PFC negative terminal on the source electrode and the substrate of the 3rd GaN HEMT pipe.
According to one embodiment of present invention, the power supply end of the control chip connects the control by diode
First level terminal of chip, wherein the anode of the diode is connected with the power supply end of the control chip, two pole
The cathode of pipe is connected with the first level terminal of the control chip.
According to one embodiment of present invention, the power supply end of the control chip is for connecting external power supply.
According to one embodiment of present invention, the control chip is also connected with air-conditioner controller, and the control chip is also
Inversion driving signal is generated according to the inverter control signal that the air-conditioner controller generates, to drive in every group of inverter module
The first GaN HEMT pipe and the 2nd GaN HEMT pipe.
According to one embodiment of present invention, the control chip is controlled also according to the PFC that the air-conditioner controller generates
Signal generates PFC driving signal, to drive the 3rd GaN HEMT in the PFC pfc circuit to manage.
In order to achieve the above object, second aspect of the present invention embodiment proposes a kind of air conditioner, including first aspect present invention
Intelligent power module described in embodiment.
The air conditioner proposed according to embodiments of the present invention, by the intelligent power module of setting, by control chip and inversion
Circuit integration is arranged on substrate, can not only save the cost of encapsulation, additionally it is possible to reduce exposed electric connecting point, simultaneously
It is managed in inverter circuit using GaN HEMT, additional parallel diode is not required to, in addition, due also to the gate charge of GaN HEMT pipe
It is managed far fewer than IGBT, so its grid does not have to connection resistance and protected, and then circuit can be simplified.
Detailed description of the invention
Fig. 1 is the block diagram according to the intelligent power module of the embodiment of the present invention；
Fig. 2 is the block diagram according to the intelligent power module of one embodiment of the invention；
Fig. 3 is the circuit diagram according to the intelligent power module of one embodiment of the invention；
Fig. 4 is the circuit diagram according to the intelligent power module of another embodiment of the present invention.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
Below with reference to the accompanying drawings the intelligent power module and air conditioner of the embodiment of the present invention are described.
Fig. 1 is the block diagram according to the intelligent power module of the embodiment of the present invention.As shown in Figure 1, the present invention is implemented
The intelligent power module 100 of example includes: substrate 10, control chip 20 and inverter circuit 30.
Wherein, control chip 20 is arranged on substrate 10；Inverter circuit 30 is arranged on substrate 10.
As shown in Figure 3-4, inverter circuit 30 includes three groups of inverter modules, and every group of inverter module is managed including the first GaN HEMT
It is managed with the 2nd GaN HEMT, wherein the drain electrode of the first GaN HEMT pipe is connected with the high voltage input terminal on substrate 10, the first GaN
The source electrode of HEMT pipe is connected with the drain electrode of the 2nd GaN HEMT pipe, the source electrode of the 2nd GaN HEMT pipe and the low-voltage on substrate 10
Reference end is connected, and the grid of the first GaN HEMT pipe and the grid of the 2nd GaN HEMT pipe are connected with control chip 20.
Wherein, three groups of inverter modules respectively correspond U, V and W phase of intelligent power module 100.
As a result, by the way that chip will be controlled and inverter circuit is integrally disposed on substrate, can not only save encapsulation at
This, additionally it is possible to exposed electric connecting point is reduced, while being replaced in the related technology in inverter circuit using GaN HEMT pipe
IGBT pipe, the grid of the grid and the 2nd GaN HEMT pipe that can make the first GaN HEMT pipe are directly connected with control chip 20,
It is connected without passing through resistance again with control chip 20 to be protected, in addition, the two-dimensional electron gas due to GaN HEMT pipe is special
Property, the first GaN HEMT pipe and the 2nd GaN HEMT, which are managed, no longer needs parallel diode FRD, thus, and then circuit can be simplified.
Specifically, as shown in Figure 3-4, first group of inverter module includes the first GaN HEMT pipe T11 and the 2nd GaN
HEMT pipe T21, second group of inverter module include the first GaN HEMT pipe T12 and the 2nd GaN HEMT pipe T22, third group inversion mould
Block includes the first GaN HEMT pipe T13 and the 2nd GaN HEMT pipe T23.
Wherein, the drain electrode of the first GaN HEMT pipe T11 of first group of inverter module, second group of inverter module the first GaN
The drain electrode of first GaN HEMT pipe T13 of the drain electrode and third group inverter module of HEMT pipe T12 links together, and and substrate
High voltage input terminal P on 10 is connected.
It should be noted that the high voltage input terminal P on substrate 10 can meet 300V.
The source electrode of first GaN HEMT pipe T11 of first group of inverter module is connected with the drain electrode of the 2nd GaN HEMT pipe T21,
The source electrode of first GaN HEMT pipe T12 of second group of inverter module is connected with the drain electrode of the 2nd GaN HEMT pipe T22, and third group is inverse
The source electrode for becoming the first GaN HEMT pipe T13 of module is connected with the drain electrode of the 2nd GaN HEMT pipe T23.
The source electrode of 2nd GaN HEMT pipe T21 of first group of inverter module and the low reference voltage end UN phase on substrate 10
Even, the source electrode of the 2nd GaN HEMT pipe T22 of second group of inverter module is connected with the low reference voltage end VN on substrate 10, third
The source electrode of 2nd GaN HEMT pipe T23 of group inverter module is connected with the low reference voltage end WN on substrate 10.
Higher-pressure region output end on the grid and control chip 20 of first GaN HEMT pipe T11 of first group of inverter module
HO1 is connected, the higher-pressure region output end on the grid and control chip 20 of the first GaN HEMT pipe T12 of second group of inverter module
HO2 is connected, the higher-pressure region output end on the grid and control chip 20 of the first GaN HEMT pipe T13 of third group inverter module
HO3 is connected, the low-pressure area output end on the grid and control chip 20 of the 2nd GaN HEMT pipe T21 of first group of inverter module
LO1 is connected, the low-pressure area output end on the grid and control chip 20 of the 2nd GaN HEMT pipe T22 of second group of inverter module
LO2 is connected, the low-pressure area output end on the grid and control chip 20 of the 2nd GaN HEMT pipe T23 of third group inverter module
LO3 is connected.
Further, according to one embodiment of present invention, as shown in Figure 3-4, every group of inverter module further include: the first electricity
Hold, one end of first capacitor is connected with the drain electrode of the first GaN HEMT pipe, and the other end of first capacitor and the 2nd GaN HEMT are managed
Source electrode be connected.
Specifically, as shown in Figure 3-4, first group of inverter module includes first capacitor C11, one end of first capacitor C11
It is connected with the drain electrode of the first GaN HEMT pipe, i.e., is connected with the high voltage input terminal P on substrate 10, the other end of first capacitor C11
Be connected with the source electrode of the 2nd GaN HEMT pipe T21 of first group of inverter module, i.e., with the low reference voltage end UN phase on substrate 10
Even.
Second group of inverter module includes first capacitor C12, the drain electrode of one end of first capacitor C12 and the first GaN HEMT pipe
It is connected, i.e., is connected with the high voltage input terminal P on substrate 10, the second of the other end of first capacitor C12 and second group of inverter module
The source electrode of GaN HEMT pipe T22 is connected, and the low reference voltage end VN on substrate 10 is connected.
Third group inverter module includes first capacitor C13, the drain electrode of one end of first capacitor C13 and the first GaN HEMT pipe
It is connected, i.e., is connected with the high voltage input terminal P on substrate 10, the other end of first capacitor C13 and the second of third group inverter module
The source electrode of GaN HEMT pipe T23 is connected, and the low reference voltage end WN on substrate 10 is connected.
It is understood that since the first GaN HEMT pipe and the 2nd GaN HEMT pipe are in use to the noise of peripheral circuit
Compare it is sensitive, so by setting first capacitor, the signal of input can be filtered, so that solving GaN HEMT pipe makes
With high frequency noise problem in the process.Specifically, for being filtered to U phase, first capacitor C12 is used for V first capacitor C11
It is mutually filtered, first capacitor C13 is for being filtered W phase.
Further, according to one embodiment of present invention, as shown in Figure 3-4, every group of inverter module further include: the second electricity
Hold, one end of the second capacitor be connected with the first level terminal for controlling chip 20 and as the higher-pressure region power supply on substrate 10 just
End, the other end of the second capacitor are connected with the drain electrode of the source electrode and the 2nd GaN HEMT pipe of the first GaN HEMT pipe, the second electricity
The other end of appearance is also connected and with the second electrical level end of control chip 20 as the higher-pressure region power supply negative terminal on substrate 10.
Wherein, the second capacitor is used to be filtered higher-pressure region power supply.
Specifically, as shown in Figure 3-4, first group of inverter module includes the second capacitor C21, one end of the second capacitor C21
It is connected and with the first level terminal VB1 of control chip 20 as the higher-pressure region power supply anode UVB on substrate 10, the second capacitor
The drain electrode of the source electrode and the 2nd GaN HEMT pipe T21 of first GaN HEMT pipe T11 of the other end of C21 and first group of inverter module
It is connected, the other end of the second capacitor C21 is also connected and with the second electrical level end VS1 of control chip 20 as the height on substrate 10
Pressure area power supply negative terminal UVS.
Second group of inverter module includes one end of the second capacitor C22, the second capacitor C22 and the first level of control chip 20
Hold VB2 to be connected and as the higher-pressure region power supply anode VVB on substrate 10, the other end of the second capacitor C22 and second group it is inverse
The drain electrode for becoming the source electrode and the 2nd GaN HEMT pipe T22 of the first GaN HEMT pipe T12 of module is connected, the second capacitor C22's
The other end is also connected and with the second electrical level end VS2 of control chip 20 as the higher-pressure region power supply negative terminal VVS on substrate 10.
Third group inverter module includes one end of the second capacitor C23, the second capacitor C23 and the first level of control chip 20
End VB3 is connected and as the higher-pressure region power supply anode WVB on substrate 10, and the other end and third group of the second capacitor C23 is inverse
The drain electrode for becoming the source electrode and the 2nd GaN HEMT pipe T23 of the first GaN HEMT pipe T13 of module is connected, the second capacitor C23's
The other end is also connected and with the second electrical level end VS3 of control chip 20 as the higher-pressure region power supply negative terminal WVS on substrate 10.
Further, according to one embodiment of present invention, as Figure 2-3, intelligent power module 100 further include: set
The PFC pfc circuit 40 on substrate 10 is set, PFC pfc circuit 40 is managed including the 3rd GaN HEMT
T3 and PFC diode D1, wherein the high pressure in the drain electrode and substrate 10 of the cathode of PFC diode D1 and the first GaN HEMT pipe
Input terminal P is connected, and the drain electrode of the 3rd GaN HEMT pipe T3 is connected with the anode of PFC diode D1, the 3rd GaN HEMT pipe T3
Drain electrode be also connected with the PFC inductance connection end PFC1 on substrate 10, on the source electrode of the 3rd GaN HEMT pipe T3 and substrate 10
PFC negative terminal-VP is connected.
In addition, due to using GaN HEMT to manage, gate charge is less, so the grid of the 3rd GaN HEMT pipe T3 can be straight
It connects and is connected with PFC output end PFCOUT, and no longer need to be connected by resistance with PFC output end PFCOUT to be protected, from
And simplify circuit, save the cost.
Further, according to one embodiment of present invention, as shown in figure 3, PFC pfc circuit 40 further includes
PFC inductance connection end in the drain electrode and substrate 10 of third capacitor C3, one end of third capacitor C3 and the 3rd GaN HEMT pipe T3
PFC1 is connected, and the other end of third capacitor C3 and the PFC negative terminal-VP on the source electrode and substrate 10 of the 3rd GaN HEMT pipe T3 are equal
It is connected.
Wherein, third capacitor C3 is for being filtered the signal of input power factor correction pfc circuit 40.
Further, according to one embodiment of present invention, as shown in Figure 3-4, the power supply end for controlling chip 20 is logical
Cross the first level terminal of diode connection control chip 20, wherein the anode of diode and the power supply end of control chip 20
It is connected, the cathode of diode is connected with the first level terminal of control chip 20.Wherein, the power supply end for controlling chip 20 is used for
Connect external power supply.
Specifically, as shown in Figure 3-4, the power supply end VCC for controlling chip 20 controls core by diode D2 connection
First level terminal VB1 of piece 20, wherein the anode of diode D2 is connected with the power supply end VCC of control chip 20, diode
The cathode of D2 is connected with the first level terminal VB1 of control chip 20.
The power supply end VCC for controlling chip 20 controls the first level terminal VB2 of chip 20 by diode D3 connection,
In, the anode of diode D3 is connected with the power supply end VCC of control chip 20, cathode and the control chip 20 of diode D3
First level terminal VB2 is connected.
The power supply end VCC for controlling chip 20 controls the first level terminal VB3 of chip 20 by diode D4 connection,
In, the anode of diode D4 is connected with the power supply end VCC of control chip 20, cathode and the control chip 20 of diode D4
First level terminal VB3 is connected.
It is understood that power supply end VCC is the power supply anode for controlling chip 20, and by substrate 10
Power supply anode VDD connection external power supply, as shown in Figure 3-4, control chip 20 is also with ground terminal GND, ground terminal GND
The power supply negative terminal for controlling chip 20, is connected, wherein power supply with the low-pressure area power supply negative terminal COM on substrate 10
Holding the voltage between VCC and ground terminal GND can be 15V.
Further, according to one embodiment of present invention, control chip 20 is controlled also according to the PFC that air-conditioner controller generates
Signal processed generates PFC driving signal, with the 3rd GaN HEMT pipe T3 in driving power factor correcting pfc circuit 40.
It is understood that as shown in figure 3, control chip 20 receives airconditioning control by the PFCIN pin of setting on the substrate 10
The PFC that device generates controls signal, and PFC controls signal and passes to PFC output end by the PFC input terminal PFCINP on control chip 20
PGCOUT is to export PFC driving signal, thus the 3rd GaN HEMT pipe T3 on or off of driving.
It should be noted that PFC control signal can be the logic input signal of 0 or 5V, PFC driving signal can be 0 or 15V
Logic output signal.
Further, according to one embodiment of present invention, control chip 20 is also connected with air-conditioner controller, controls core
Piece 20 generates inversion driving signal also according to the inverter control signal that air-conditioner controller generates, to drive in every group of inverter module
First GaN HEMT pipe and the 2nd GaN HEMT pipe.
It is understood that as shown in Figure 3-4, control chip 20 by setting UHIN, VHIN on the substrate 10, WHIN, ULIN,
VLIN and WLIN pin receives the six road inverter control signals that air-conditioner controller generates, and six road inverter control signals pass through control core
Input terminal HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 on piece 20 pass to respectively higher-pressure region output end HO1, HO2, HO3 and
Low-pressure area output end LO1, LO2, LO3 to export inversion driving signal, thus the first GaN HEMT pipe T11, T12 of corresponding driving,
T13 and the 2nd GaN HEMT pipe T21, T22, T23 on or off, and then can will be corrected through PFC pfc circuit 40
The DC inverter of high-quality afterwards is operating of the alternating current to drive such as compressor or blower.
It should be noted that six road inverter control signals can be the logic input signal of 0 or 5V.Higher-pressure region output end HO1
The inversion driving signal of output can be the logic that the voltage of second electrical level end VS1 or the voltage of second electrical level end VS1 add 15V
Output signal, the inversion driving signal of higher-pressure region output end HO2 output can be the voltage or second electrical level of second electrical level end VS2
The voltage of VS2 is held to add the logic output signal of 15V, the inversion driving signal of higher-pressure region output end HO3 output can be the second electricity
The voltage of the voltage of flush end VS3 or second electrical level end VS3 add the logic output signal of 15V, low-pressure area output end LO1, low
The inversion driving signal of pressure area output end LO2 and low-pressure area output end LO3 output can be the logic output signal of 0 or 15V.
It should be noted that the input signal of same phase cannot be high level simultaneously, that is, control the input terminal on chip 20
HIN1 and input terminal LIN1 cannot be that high level, input terminal HIN2 and input terminal LIN2 cannot be high level, input simultaneously simultaneously
The signal for holding HIN3 and input terminal LIN3 input cannot be high level simultaneously, that is to say, that the first GaN of every group of inverter module
HEMT pipe is different with the 2nd GaN HEMT pipe to be simultaneously turned on.
In addition, the intelligent power module of the embodiment of the present invention also has overcurrent protection, overvoltage protection and temperature detecting function.
It wherein, can be by the way that current sampling unit be arranged for example in inverter circuit 30 and PFC pfc circuit 40
Sampling resistor carries out the electric current for flowing through each GaN HEMT pipe source electrode in inverter circuit 30 and PFC pfc circuit 40
Sampling, to obtain overcurrent protection signal.
In addition, control chip 20 overcurrent protection pin ITRIP also with the overcurrent protection pin MTRIP phase on substrate 10
Even, control chip 20 can receive overcurrent protection signal by the overcurrent protection pin MTRIP on substrate 10, and according to overcurrent protection
Signal carries out overcurrent protection, such as the first GaN HEMT pipe T11, T12, T13 and the 2nd GaN HEMT of control to inverter circuit 30
Pipe T21, T22, T23 are turned off.Wherein, overcurrent protection signal is used to indicate the electric current for flowing through inverter circuit 30 greater than current threshold
Value.
The voltage in actual circuit can be compared with reference voltage by the way that voltage comparator circuit is arranged in integrated circuits
Compared with, it can be achieved that overvoltage protection to entire circuit.
It can be by the way that temperature detecting unit such as thermistor be arranged on the substrate 10, wherein one end of temperature detecting unit
It is connected with the temperature sense pin on substrate 10, the other end ground connection of temperature detecting unit.Temperature detecting unit can detect substrate
10 temperature, such as when temperature change on the substrate 10, the resistance value of thermistor will change, so that temperature sense draws
Voltage at foot changes, and the temperature of substrate 10 can be obtained by the voltage at detection temperature sense pin, and then realizes temperature
Spend detection function.
To sum up, the intelligent power module proposed according to embodiments of the present invention, control chip and inverter circuit is integrally disposed
On substrate, inverter circuit includes three groups of inverter modules, and every group of inverter module includes the first GaN HEMT pipe and the 2nd GaN
HEMT pipe, wherein the drain electrode of the first GaN HEMT pipe is connected with the high voltage input terminal on substrate, the source electrode of the first GaN HEMT pipe
It is connected with the drain electrode of the 2nd GaN HEMT pipe, the source electrode of the 2nd GaN HEMT pipe is connected with the low reference voltage end on substrate, the
The grid of one GaN HEMT pipe and the grid of the 2nd GaN HEMT pipe are connected with control chip.The embodiment of the present invention as a result,
Control chip and inverter circuit are integrally disposed on substrate, can not only save the cost of encapsulation by intelligent power module, also
Exposed electric connecting point can be reduced, while being managed in inverter circuit using GaN HEMT, is not required to additional parallel diode, separately
Outside, due also to the gate charge of GaN HEMT pipe is managed far fewer than IGBT, so its grid does not have to connection resistance and is protected, in turn
Circuit can be simplified.
Intelligent power module based on the above embodiment, the embodiment of the present invention also proposed a kind of air conditioner, including aforementioned
Intelligent power module.
The air conditioner proposed according to embodiments of the present invention, by the intelligent power module of setting, by control chip and inversion
Circuit integration is arranged on substrate, can not only save the cost of encapsulation, additionally it is possible to reduce exposed electric connecting point, simultaneously
It is managed in inverter circuit using GaN HEMT, additional parallel diode is not required to, in addition, due also to the gate charge of GaN HEMT pipe
It is managed far fewer than IGBT, so its grid does not have to connection resistance and protected, and then circuit can be simplified.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be orientation based on the figure or
Positional relationship is merely for convenience of description of the present invention and simplification of the description, rather than the device or element of indication or suggestion meaning must
There must be specific orientation, be constructed and operated in a specific orientation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the present invention, the meaning of " plurality " is at least two, such as two, three
It is a etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements, unless otherwise restricted clearly.For those of ordinary skill in the art
For, the specific meanings of the above terms in the present invention can be understood according to specific conditions.
In the present invention unless specifically defined or limited otherwise, fisrt feature in the second feature " on " or " down " can be with
It is that the first and second features directly contact or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature be directly above or diagonally above the second feature, or be merely representative of
First feature horizontal height is higher than second feature.Fisrt feature can be under the second feature " below ", " below " and " below "
One feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
It can be combined in any suitable manner in one or more embodiment or examples.In addition, without conflicting with each other, the skill of this field
Art personnel can tie the feature of different embodiments or examples described in this specification and different embodiments or examples
It closes and combines.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (10)
1. a kind of intelligent power module characterized by comprising
Substrate；
Control chip on the substrate is set；
Inverter circuit on the substrate is set, and the inverter circuit includes three groups of inverter modules, every group of inverter module packet
Include the first GaN HEMT pipe and the 2nd GaN HEMT pipe, wherein in the drain electrode of the first GaN HEMT pipe and the substrate
High voltage input terminal is connected, and the source electrode of the first GaN HEMT pipe is connected with the drain electrode of the 2nd GaN HEMT pipe, and described the
The source electrode of two GaN HEMT pipes is connected with the low reference voltage end on the substrate, the grid of the first GaN HEMT pipe and
The grid of two GaN HEMT pipes is connected with the control chip.
2. intelligent power module according to claim 1, which is characterized in that every group of inverter module further include:
First capacitor, one end of the first capacitor are connected with the drain electrode of the first GaN HEMT pipe, the first capacitor
The other end is connected with the source electrode of the 2nd GaN HEMT pipe.
3. intelligent power module according to claim 1, which is characterized in that every group of inverter module further include:
Second capacitor, one end of second capacitor are connected and with the first level terminal of the control chip as on the substrate
Higher-pressure region power supply anode, the source electrode and described second of the other end of second capacitor and the first GaN HEMT pipe
The drain electrode of GaN HEMT pipe is connected, and the other end of second capacitor is also connected simultaneously with the second electrical level end of the control chip
As the higher-pressure region power supply negative terminal on the substrate.
4. intelligent power module according to claim 1, which is characterized in that further include:
PFC pfc circuit on the substrate is set, and the PFC pfc circuit includes third
GaN HEMT pipe and PFC diode, wherein the drain electrode of the cathode of the PFC diode and the first GaN HEMT pipe and institute
The high voltage input terminal stated on substrate is connected, and the drain electrode of the 3rd GaN HEMT pipe is connected with the anode of the PFC diode,
The drain electrode of the 3rd GaN HEMT pipe is also connected with the PFC inductance connection end on the substrate, the 3rd GaN HEMT pipe
Source electrode be connected with the PFC negative terminal on the substrate.
5. intelligent power module according to claim 4, which is characterized in that the PFC pfc circuit also wraps
Include third capacitor, the PFC inductance in the drain electrode and the substrate of one end of the third capacitor and the 3rd GaN HEMT pipe
Connecting pin is connected, the PFC on the source electrode and the substrate of the other end of the third capacitor and the 3rd GaN HEMT pipe
Negative terminal is connected.
6. intelligent power module according to claim 3, which is characterized in that the power supply end of the control chip passes through
Diode connects the first level terminal of the control chip, wherein the power supply of the anode of the diode and the control chip
Power end is connected, and the cathode of the diode is connected with the first level terminal of the control chip.
7. intelligent power module according to claim 6, which is characterized in that wherein, the power supply of the control chip
End is for connecting external power supply.
8. intelligent power module according to claim 4, which is characterized in that the control chip also with air-conditioner controller phase
Even, the control chip generates inversion driving signal also according to the inverter control signal that the air-conditioner controller generates, with driving
The first GaN HEMT pipe and the 2nd GaN HEMT pipe in every group of inverter module.
9. intelligent power module according to claim 8, which is characterized in that the control chip is also according to the air-conditioning control
The PFC control signal that device processed generates generates PFC driving signal, to drive the 3rd GaN in the PFC pfc circuit
HEMT pipe.
10. a kind of air conditioner, which is characterized in that including such as described in any item intelligent power module of claim 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910356450.7A CN109921675A (en) | 2019-04-29 | 2019-04-29 | Intelligent power module and air conditioner |
| PCT/CN2019/110354 WO2020220590A1 (en) | 2019-04-29 | 2019-10-10 | Intelligent power module and air conditioner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910356450.7A CN109921675A (en) | 2019-04-29 | 2019-04-29 | Intelligent power module and air conditioner |
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| Publication Number | Publication Date |
|---|---|
| CN109921675A true CN109921675A (en) | 2019-06-21 |
Family
ID=66978829
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910356450.7A Pending CN109921675A (en) | 2019-04-29 | 2019-04-29 | Intelligent power module and air conditioner |
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| Country | Link |
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| CN (1) | CN109921675A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993595A (en) * | 2019-12-09 | 2020-04-10 | 中国电子科技集团公司第五十五研究所 | GaN-based HEMT tube core |
| CN111463755A (en) * | 2020-03-30 | 2020-07-28 | 海信（山东）空调有限公司 | PFC overvoltage protection circuit and PFC circuit |
| WO2020220590A1 (en) * | 2019-04-29 | 2020-11-05 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102651393A (en) * | 2011-02-25 | 2012-08-29 | 富士通株式会社 | Compound semiconductor device and method for manufacturing the same |
| JP2016152672A (en) * | 2015-02-17 | 2016-08-22 | ジョンソンコントロールズ ヒタチ エア コンディショニング テクノロジー（ホンコン）リミテッド | Power conversion device and air conditioner having the same |
| CN107294362A (en) * | 2016-03-30 | 2017-10-24 | 苏州保尔迪瓦电子科技有限公司 | Spm |
| CN208015588U (en) * | 2018-03-28 | 2018-10-26 | 芜湖美智空调设备有限公司 | Intelligent power module and air conditioner |
| CN208596670U (en) * | 2018-06-13 | 2019-03-12 | 重庆美的制冷设备有限公司 | Highly integrated intelligent power module and air conditioner |
| CN209562431U (en) * | 2019-04-29 | 2019-10-29 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
-
2019
- 2019-04-29 CN CN201910356450.7A patent/CN109921675A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102651393A (en) * | 2011-02-25 | 2012-08-29 | 富士通株式会社 | Compound semiconductor device and method for manufacturing the same |
| JP2016152672A (en) * | 2015-02-17 | 2016-08-22 | ジョンソンコントロールズ ヒタチ エア コンディショニング テクノロジー（ホンコン）リミテッド | Power conversion device and air conditioner having the same |
| CN107294362A (en) * | 2016-03-30 | 2017-10-24 | 苏州保尔迪瓦电子科技有限公司 | Spm |
| CN208015588U (en) * | 2018-03-28 | 2018-10-26 | 芜湖美智空调设备有限公司 | Intelligent power module and air conditioner |
| CN208596670U (en) * | 2018-06-13 | 2019-03-12 | 重庆美的制冷设备有限公司 | Highly integrated intelligent power module and air conditioner |
| CN209562431U (en) * | 2019-04-29 | 2019-10-29 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020220590A1 (en) * | 2019-04-29 | 2020-11-05 | 广东美的制冷设备有限公司 | Intelligent power module and air conditioner |
| CN110993595A (en) * | 2019-12-09 | 2020-04-10 | 中国电子科技集团公司第五十五研究所 | GaN-based HEMT tube core |
| CN111463755A (en) * | 2020-03-30 | 2020-07-28 | 海信（山东）空调有限公司 | PFC overvoltage protection circuit and PFC circuit |
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