CN209184504U - Power device and electric appliance - Google Patents
Power device and electric appliance Download PDFInfo
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- CN209184504U CN209184504U CN201822274282.0U CN201822274282U CN209184504U CN 209184504 U CN209184504 U CN 209184504U CN 201822274282 U CN201822274282 U CN 201822274282U CN 209184504 U CN209184504 U CN 209184504U
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- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 70
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
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Abstract
The utility model discloses a kind of power device and electric appliance, the power device, comprising: SS input terminal；On first on bridge arm switching tube to third bridge arm switching tube and the first lower bridge arm switching tube to third lower bridge arm switching tube；It is connected and respectively drives UH driving circuit, VH driving circuit and the WH driving circuit of bridge arm switching tube on bridge arm switching tube to third on first with SS input terminal, wherein, UH driving circuit is connected with bridge arm switching tube on first, VH driving circuit is connected with bridge arm switching tube on second, and WH driving circuit is connected with bridge arm switching tube in third；It is connected with SS input terminal and drives the first lower bridge arm switching tube to the UL/VL/WL driving circuit of third lower bridge arm switching tube, UL/VL/WL driving circuit is connected with the first lower bridge arm switching tube to third lower bridge arm switching tube respectively.The power device of the utility model can be improved the suitability of silicon intelligent power module and silicon carbide intelligent power module, play silicon intelligent power module and the performance of silicon carbide intelligent power module.
Description
Technical field
The utility model relates to technical field of electric appliances, in particular to a kind of power device and a kind of with the power device
Electric appliance.
Background technique
Intelligent power module, i.e. IPM (Intelligent Power Module) are a kind of by power electronics and integrated electricity
The power drive class product (power device) that road technique combines.Intelligent power module is device for power switching (such as SiC (silicon carbide)
Device or Si (silicon) device) and high voltage integrated circuit integrate, and it is interior keep the failures such as overvoltage, overcurrent and overheat inspection
Slowdown monitoring circuit.On the one hand intelligent power module receives the control signal of MCU (Micro Controller Unit, micro-control unit),
Subsequent conditioning circuit work is driven, on the other hand sends the state detection signal of system back to MCU.Compared with traditional discrete scheme, intelligence
Power module wins increasing market with advantages such as its high integration, high reliability, is particularly suitable for the change of driving motor
Frequency device and various inverters are frequency control, metallurgical machinery, electric propulsion, servo-drive, a kind of desired electrical of frequency-conversion domestic electric appliances
Power electronic device.
In practical application, with the continuous improvement required system energy consumption, especially in air conditioner industry, intelligent power module
Power consumption become convertible frequency air-conditioner frequency conversion electrical control power consumption main source, how to reduce intelligent power module power consumption become influence intelligence
Energy power module or even the important topic of convertible frequency air-conditioner further genralrlization application.Substituting Si device by SiC device is to reduce intelligence
The effective way of energy power module power consumption, but new problem is consequently also brought, because of SiC device and the threshold value of Si device electricity
Pressure is different, and in general, the threshold voltage of SiC device is higher than Si device, if driven using with a high voltage integrated circuit
Dynamic, the turn on process for being bound to cause SiC device is not thorough, and the low-power consumption advantage of SiC cannot play, and even proper it is anti-
Effect, but if being driven using different high voltage integrated circuits, it will cause the difficulty of the material tissue in production process,
There is mixing risk, correspondingly also improves the cost of intelligent power module, also, if the integrated electricity of the high pressure of driving SiC device
Road is powered using higher voltage, and the power consumption for being also bound to cause entire intelligent power module improves, the power with SiC device
Decline offsets, and reduces the effect of the intelligent power module reducing power consumption using SiC device, also, if uses higher voltage
To the high voltage integrated circuit power supply of driving SiC device, it must just modify to the automatically controlled scheme in periphery, undoubtedly also increase in this way
Conflict to the intelligent power module equipped with SiC device.
Utility model content
The utility model improves silicon intelligence function by providing a kind of solution of power device with high-adaptability
The suitability of rate module and silicon carbide intelligent power module makes the technology of silicon intelligent power module and silicon carbide intelligent power module
Advantage can be played.
The utility model provides a kind of power device, comprising: SS input terminal；Bridge on bridge arm switching tube to third on first
Arm switch pipe and the first lower bridge arm switching tube are to third lower bridge arm switching tube；It is connected with the SS input terminal and respectively drives institute
State UH driving circuit, VH driving circuit and the WH driving circuit of bridge arm switching tube on bridge arm switching tube to third on first, wherein
The UH driving circuit is connected with bridge arm switching tube on first, and the VH driving circuit is connected with bridge arm switching tube on second, institute
WH driving circuit is stated to be connected with bridge arm switching tube in third, wherein when the SS input terminal is high level, the UH driving electricity
Road, the VH driving circuit, the WH driving circuit output first voltage range low and high level signal, when the SS input terminal
When for low level, the UH driving circuit, the VH driving circuit, WH driving circuit output second voltage range height
Level signal；It is connected with the SS input terminal and drives the first lower bridge arm switching tube to the UL/ of third lower bridge arm switching tube
VL/WL driving circuit, the UL/VL/WL driving circuit are switched with the first lower bridge arm switching tube to third lower bridge arm respectively
Pipe is connected, wherein when the SS input terminal is high level, the height of the UL/VL/WL driving circuit output first voltage range
Low level signal, when the SS input terminal is low level, the height of the UL/VL/WL driving circuit output second voltage range
Low level signal.
Wherein, the first voltage range is 0~20V, and the second voltage range is 0~15V.
Specifically, bridge arm switching tube and the first lower bridge arm switching tube on bridge arm switching tube to third on described first
To third lower bridge arm switching tube be Si device when, the SS input terminal is connected to the ground by binding line, the bridge on described first
Bridge arm switching tube and the first lower bridge arm switching tube to third lower bridge arm switching tube are SiC device on arm switch pipe to third
When, the SS input terminal is connected with power supply by binding line.
Specifically, the UH driving circuit, VH driving circuit or WH driving circuit include: the first input sub-circuit, described
First input sub-circuit is connected with SS input terminal, and described first inputs sub-circuit with the first output end, second output terminal and the
Three output ends, wherein when the SS input terminal is low level, first output end and second output terminal output triggering arteries and veins
Punching, when the SS input terminal is high level, first output end, second output terminal and third output end output triggering
Pulse；First switch tube to third switching tube, the first switch tube is connected with first output end, the second switch
It is connected with the second output terminal, the third switching tube is connected with the third output end；First voltage exports sub-circuit, institute
It states first voltage output sub-circuit to be connected with the first switch tube to third switching tube respectively, the first voltage output son electricity
Road exports the low and high level signal of second voltage range when the third switching tube does not turn on, and in the third switching tube
The low and high level signal of first voltage range is exported when conducting.
Further, the first voltage output sub-circuit includes: to be connected with the first switch tube and second switch
Latch and boost module；First switching module, first switching module respectively with the latch and boost module and power supply
It is connected；The latch module being connected with the third switching tube, the latch module control first switching module, when
Using the power supply as the output voltage of the voltage output sub-circuit when third switching tube does not turn on, when the third is opened
When closing pipe conducting, using the output voltage of the latch and boost module as the output voltage of the voltage output sub-circuit.
Specifically, the UL/VL/WL driving circuit includes: the second input sub-circuit, and second input submodule includes
First output end to the 4th output end, wherein when the SS input terminal is low level, first output end to third is exported
End output trigger pulse, when the SS input terminal is high level, first output end to the 4th output end exports triggering arteries and veins
Punching；Boost sub-circuit, and supply voltage is boosted to the first voltage range by the boosting sub-circuit；With the second input
The second voltage that circuit is connected with the boosting sub-circuit exports sub-circuit, wherein when the first output end is defeated to third output end
Out when trigger pulse, the low and high level signal of the second voltage output sub-circuit output second voltage range, when described first
When output end to the 4th output end exports trigger pulse, the height of the second voltage output sub-circuit output first voltage range
Level signal.
Further, the second voltage output sub-circuit includes: defeated with the first of the second input sub-circuit respectively
UL output module, VL output module and the WL output module that outlet is connected to third output end；Respectively with the UL output module,
The second switching module that VL output module is connected with WL output module is to the 4th switching module, wherein second switching module
To the 4th switching module according to the 4th output end selection supply voltage or the boosting sub-circuit of the second input sub-circuit
Output voltage as the second voltage output sub-circuit output voltage.
One or more technical solutions of the utility model, have at least the following technical effects or advantages:
1, the supply voltage of the power device of the utility model embodiment is that 15V is constant, and peripheral circuit does not need to be repaired
Change, there is no essence to increase for the power consumption of high voltage integrated circuit；It drives SiC device and driving Si device is the integrated electricity of same high pressure
Road does not have mixing risk in production process, is convenient for material tissue, reduces Material Cost；SiC device is driven to use the voltage of 20V,
It drives Si device to use the voltage of 15V, makes the turn on process of SiC device and Si device all in fully on state, make respectively
Performance is played.
2, the circuit board figure of high voltage integrated circuit and power device only passes through the nation in manufacturing process completely without variation
The switching of driving voltage between different driving device can be completed in alignment.
Detailed description of the invention
Fig. 1 a is the circuit structure diagram of intelligent power module in the related technology；
Fig. 1 b is the recommendation circuit structure diagram of intelligent power module in actual work in the related technology；
Fig. 2 is the circuit structure diagram of the power device of the utility model embodiment；
Fig. 3 be the power device of the utility model one embodiment by binding line by SS input terminal and power supply or ground phase
Schematic diagram even；
Fig. 4 a to Fig. 4 e is the schematic diagram of the switching tube of the utility model specific embodiment；
Fig. 5 a is the schematic diagram of the UH driving circuit of one specific embodiment of the utility model；And
Fig. 5 b is the schematic diagram of the UL/VL/WL driving circuit of one specific embodiment of the utility model.
Specific embodiment
Power device before introducing the utility model embodiment, under first Fig. 1 a and Fig. 1 b being combined to introduce in the related technology
Such as intelligent power module 100.
A referring to Fig.1, HVIC (High Voltage Integrated Circuit, high pressure collection in intelligent power module 100
At circuit) low-pressure area power supply the anode VDD, VDD mono- of the power supply anode VCC of pipe 111 as intelligent power module 100
As be 15V；The end HIN1 of HVIC pipe 111 is as bridge arm input terminal UHIN in the U phase of intelligent power module 100, in HVIC pipe 111
Inside is connected with the input terminal of UH driving circuit 101；V Xiang Shangqiao of the end HIN2 of HVIC pipe 111 as intelligent power module 100
Arm input terminal VHIN is connected in 111 inside of HVIC pipe with the input terminal of VH driving circuit 102；The end the HIN3 conduct of HVIC pipe 111
Bridge arm input terminal WHIN in the W phase of intelligent power module 100, the input terminal phase in 111 inside and WH driving circuit 103 of HVIC pipe
Even；U phase lower bridge arm input terminal ULIN of the end LIN1 of HVIC pipe 111 as intelligent power module 100, inside HVIC pipe 111
It is connected with the input terminal of UL driving circuit 104；The end LIN2 of HVIC pipe 111 is defeated as the V phase lower bridge arm of intelligent power module 100
Enter to hold VLIN, be connected in 111 inside of HVIC pipe with the input terminal of VL driving circuit 105；The end LIN3 of HVIC pipe 111 is as intelligence
The W phase lower bridge arm input terminal WLIN of power module 100 is connected in 111 inside of HVIC pipe with the input terminal of WL driving circuit 106；
Here, six road input terminals of U, V, W three-phase of intelligent power module 100 receive the input signal of 0V or 5V；HVIC pipe 111
Low-pressure area power supply negative terminal COM of the end GND as intelligent power module 100, and with UH driving circuit 101, VH driving circuit
102, WH driving circuit 103, UL driving circuit 104, VL driving circuit 105, the low-pressure area power supply of WL driving circuit 106 are negative
End is connected.
Higher-pressure region power supply anode phase of the end VB1 of HVIC pipe 111 in 111 inside and UH driving circuit 101 of HVIC pipe
Even, in one end of 111 external connection capacitor 131 of HVIC pipe, and the U phase higher-pressure region power supply as intelligent power module 100
Anode UVB；The end HO1 of HVIC pipe 111 is connected in 111 inside of HVIC pipe with the output end of UH driving circuit 101, manages in HVIC
111 outsides and bridge arm IGBT in U phase (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor)
The grid of pipe 121 is connected；The end VS1 of HVIC pipe 111 powers electric in the higher-pressure region of 111 inside of HVIC pipe and UH driving circuit 101
Source negative terminal is connected, and in emitter-base bandgap grading, the FRD of 111 outside of HVIC pipe and IGBT pipe 121, (Fast Recovery Diode, restores two fastly
Pole pipe) anode of pipe 141, the collector of U phase lower bridge arm IGBT pipe 124, the cathode of FRD pipe 144, capacitor 131 other end phase
Connect, and the U phase higher-pressure region power supply negative terminal UVS as intelligent power module 100.
Higher-pressure region power supply anode phase of the end VB2 of HVIC pipe 111 in 111 inside and VH driving circuit 102 of HVIC pipe
Even, in one end of 111 external connection capacitor 132 of HVIC pipe, the V phase higher-pressure region power supply as intelligent power module 100 is just
Hold VVB；The end HO2 of HVIC pipe 111 is connected in 111 inside of HVIC pipe with the output end of VH driving circuit 102, in HVIC pipe 111
Outside is connected with the grid of bridge arm IGBT pipe 122 in V phase；The end VS2 of HVIC pipe 111 is in 111 inside of HVIC pipe and VH driving electricity
The higher-pressure region power supply negative terminal on road 102 is connected, in 111 outside of HVIC pipe and the emitter-base bandgap grading of IGBT pipe 122, the sun of FRD pipe 142
Pole, the collector of V phase lower bridge arm IGBT pipe 125, the cathode of FRD pipe 145, the other end of capacitor 132 are connected, and as intelligent function
The W phase higher-pressure region power supply negative terminal VVS of rate module 100.
Higher-pressure region power supply anode phase of the end VB3 of HVIC pipe 111 in 111 inside and WH driving circuit 103 of HVIC pipe
Even, in one end of 111 external connection capacitor 133 of HVIC pipe, the W phase higher-pressure region power supply as intelligent power module 100 is just
Hold WVB；The end HO3 of HVIC pipe 111 is connected in 111 inside of HVIC pipe with the output end of WH driving circuit 103, in HVIC pipe 111
Outside is connected with the grid of bridge arm IGBT pipe 123 in W phase；The end VS3 of HVIC pipe 111 is in 111 inside of HVIC pipe and WH driving electricity
The higher-pressure region power supply negative terminal on road 103 is connected, in 111 outside of HVIC pipe and the emitter-base bandgap grading of IGBT pipe 123, the sun of FRD pipe 143
Pole, the collector of W phase lower bridge arm IGBT pipe 126, the cathode of FRD pipe 146, the other end of capacitor 133 are connected, and as intelligent function
The W phase higher-pressure region power supply negative terminal WVS of rate module 100.
The end LO1 of HVIC pipe 111 is connected in 111 inside of HVIC pipe with the output end of UL driving circuit 104, manages in HVIC
111 outsides are connected with the grid of U phase lower bridge arm IGBT pipe 124；The end LO2 of HVIC pipe 111 drives in 111 inside of HVIC pipe with VL
The output end of circuit 105 is connected, and is connected in 111 outside of HVIC pipe with the grid of V phase lower bridge arm IGBT pipe 125；HVIC pipe 111
The end LO3 is connected in 111 inside of HVIC pipe with the output end of WL driving circuit 106, in 111 outside of HVIC pipe and W phase lower bridge arm
The grid of IGBT pipe 126 is connected；The emitter-base bandgap grading of IGBT pipe 124 is connected with the anode of FRD pipe 144, and as intelligent power module 100
U phase low reference voltage end UN；The emitter-base bandgap grading of IGBT pipe 125 is connected with the anode of FRD pipe 145, and as intelligent power module 100
V phase low reference voltage end VN；The emitter-base bandgap grading of IGBT pipe 126 is connected with the anode of FRD pipe 146, and as intelligent power module 100
W phase low reference voltage end WN；The collector of IGBT pipe 121, the cathode of FRD pipe 141, the collector of IGBT pipe 122, FRD pipe
142 cathode, the collector of IGBT pipe 123, FRD pipe 143 cathode be connected, and the high voltage as intelligent power module 100
Input terminal P, P generally meet 300V.
The effect of HVIC pipe 111 is:
VCC is the power supply anode of HVIC pipe 111, and GND is the power supply negative terminal of HVIC pipe 111；VCC-GND voltage
Generally 15V；VB1 and VS1 is respectively the anode and cathode of the power supply of U phase higher-pressure region, and HO1 is the output end of U phase higher-pressure region；
VB2 and VS2 is respectively the anode and cathode of the power supply of V phase higher-pressure region, and HO2 is the output end of V phase higher-pressure region；VB3 and VS3 difference
For the anode and cathode of the power supply of W phase higher-pressure region, HO3 is the output end of W phase higher-pressure region；LO1, LO2, LO3 are respectively U phase, V
The output end of phase, W phase low-pressure area.
The logic input signal of input terminal HIN1, HIN2, HIN3 and LIN1, the 0 of LIN2, LIN3 or 5V are passed to respectively defeated
Outlet HO1, HO2, HO3 and LO1, LO2, LO3, wherein HO1 be the logic output signal of VS1 or VS1+15V, HO2 be VS2 or
Logic output signal, the HO3 of VS2+15V are the logic output signal of VS3 or VS3+15V, and LO1, LO2, LO3 are patrolling for 0 or 15V
Collect output signal；The input signal of same phase cannot be high level simultaneously, i.e., HIN1 and LIN1, HIN2 and LIN2, HIN3 and
LIN3 cannot be high level simultaneously.
The recommendation circuit of intelligent power module 100 in actual work is as shown in Figure 1 b:
External capacitor 135 between UVB and UVS；External capacitor 136 between VVB and VVS；External capacitor 137 between WVB and WVS；?
This, capacitor 131,132,133 mainly plays a filtering role, and capacitor 135,136,137 mainly plays storing electricity；UN, VN, WN and
The Pin7 of MCU pipe 200 is connected and one end of connecting resistance 138；Another termination COM of resistance 138；The Pin1 and intelligence of MCU pipe 200
The end UHIN of power module 100 is connected；The Pin2 of MCU pipe 200 is connected with the end VHIN of intelligent power module 100；MCU pipe 200
Pin3 be connected with the end WHIN of intelligent power module 100；The end the ULIN phase of the Pin4 of MCU pipe 200 and intelligent power module 100
Even；The Pin5 of MCU pipe 200 is connected with the end VLIN of intelligent power module 100；The Pin6 and intelligent power module of MCU pipe 200
100 end WLIN is connected.
Illustrate the working condition of intelligent power module 100 by taking U phase as an example:
1, when the Pin4 of MCU pipe 200 issues high level signal, the Pin1 of MCU pipe 200 must send out low level signal,
Signal makes LIN1 high level, HIN1 be low level, at this point, LO1 exports high level, and HO1 exports low level, so that IGBT is managed
124 conductings, and IGBT pipe 121 ends, VS1 voltage is about 0V；144 forward bias of FRD pipe, VCC pass through IGBT pipe 124 to capacitor
131 and capacitor 135 charge, it is surplus when the duration long enough that LIN1 is high level or before so that capacitor 131 and capacitor 135 is charged
When remaining electricity is enough, VB1 obtains the voltage close to 15V to VS1；
2, when the Pin1 of MCU pipe 200 issues high level signal, the Pin4 of MCU pipe 200 must send out low level signal,
Signal makes LIN1 low level, HIN1 be high level, at this point, LO1 exports low level, and HO1 exports high level, so that IGBT is managed
124 cut-offs, and IGBT pipe 121 is connected, VS1 voltage is about 300V, and VB1 voltage is lifted to 315V or so, by capacitor 131 and
The electricity of capacitor 135 maintains the work of U phase higher-pressure region, if HIN1 be high level duration is short enough or capacitor 131 and electricity
The electricity for holding 135 storages is enough, then VB1 is positively retained at 14V or more to voltage of the VS1 in the course of work of U phase higher-pressure region.
In practical application, with the continuous improvement required system energy consumption, especially in air conditioner industry, intelligent power module
Power consumption become convertible frequency air-conditioner frequency conversion electrical control power consumption main source, how to reduce intelligent power module power consumption becomes influence intelligence
Energy power module or even the important topic of convertible frequency air-conditioner further genralrlization application.Substituting Si device by SiC device is to reduce intelligence
The effective way of energy power module power consumption, but new problem is consequently also brought, because of SiC device and the threshold value of Si device electricity
Pressure is different, and in general, the threshold voltage of SiC device is higher than Si device, if driven using with a high voltage integrated circuit
Dynamic, the turn on process for being bound to cause SiC device is not thorough, and the low-power consumption advantage of SiC cannot play, and even proper it is anti-
Effect, but if being driven using different high voltage integrated circuits, it will cause the difficulty of the material tissue in production process,
There is mixing risk, correspondingly also improves the cost of intelligent power module, also, if the integrated electricity of the high pressure of driving SiC device
Road is powered using higher voltage, and the power consumption for being also bound to cause entire intelligent power module improves, the power with SiC device
Decline offsets, and reduces the effect of the intelligent power module reducing power consumption using SiC device, also, if uses higher voltage
To the high voltage integrated circuit power supply of driving SiC device, it must just modify to the automatically controlled scheme in periphery, undoubtedly also increase in this way
Conflict to the intelligent power module equipped with SiC device.
For this purpose, can be improved silicon intelligent power mould the utility model proposes a kind of power device with high-adaptability
The suitability of block and silicon carbide intelligent power module obtains silicon intelligent power module and the performance of silicon carbide intelligent power module
It plays.
In order to better understand the above technical scheme, the example of the utility model is more fully described below with reference to accompanying drawings
Property embodiment.Although showing the exemplary embodiment of the utility model in attached drawing, it being understood, however, that can be in a variety of manners
It realizes the utility model and should not be limited by the embodiments set forth herein.It is to be able to more on the contrary, providing these embodiments
Thoroughly understand the utility model, and the scope of the utility model can be fully disclosed to those skilled in the art.
In order to better understand the above technical scheme, in conjunction with appended figures and specific embodiments to upper
Technical solution is stated to be described in detail.
Fig. 2 is the circuit structure diagram of the power device of the utility model embodiment.
As shown in Fig. 2, the power device 4100, comprising: SS input terminal, bridge arm is opened on bridge arm switching tube to third on first
Close pipe 4121,4122 and 4123, the first lower bridge arm switching tube to third lower bridge arm switching tube 4124,4125 and 4126, and SS
Input terminal is connected and respectively drives the UH driving of bridge arm switching tube 4121,4122 and 4123 on bridge arm switching tube to third on first
Circuit 4101, VH driving circuit 4102 and WH driving circuit 4103 and it is connected with SS input terminal and the first lower bridge arm is driven to open
The UL/VL/WL driving circuit 4104 of Guan Guanzhi third lower bridge arm switching tube 4124,4125 and 4126.
Wherein, UH driving circuit 4101 is connected with bridge arm switching tube 4121 on first, on VH driving circuit 4102 and second
Bridge arm switching tube 4122 is connected, and WH driving circuit 4103 is connected with bridge arm switching tube 4123 in third, wherein when SS input terminal is
When high level, UH driving circuit 4101, VH driving circuit 4102, WH driving circuit 4103 export the height electricity of first voltage range
Ordinary mail number, when SS input terminal is low level, UH driving circuit 4101, VH driving circuit 4102, WH driving circuit 4103 are exported
The low and high level signal of second voltage range；When SS input terminal is high level, the output of UL/VL/WL driving circuit 4,104 first
The low and high level signal of voltage range, when SS input terminal is low level, UL/VL/WL driving circuit 4104 exports second voltage
The low and high level signal of range.Wherein, in one embodiment of the utility model, first voltage range be 0~20V, second
Voltage range is 0~15V.
Specifically, referring to fig. 2, by UH driving circuit 4101, VH driving circuit 4102, WH driving circuit 4103 and UL/VL/
WL driving circuit 4104 is integrated in inside HVIC pipe 4111, low-pressure area of the end VCC of HVIC pipe 4111 as power device 4100
Power supply anode VDD, VDD are generally 15V；Inside HVIC pipe 4111, the end VCC and UH driving circuit 4101, VH driving electricity
Road 4102, WH driving circuit 4103 are connected with the power supply anode of UL/VL/WL driving circuit 4104.
The end HIN1 of HVIC pipe 4111 is as bridge arm input terminal UHIN in the U phase of power device 4100, in HVIC pipe 4111
Inside is connected with the input terminal of UH driving circuit 4101；V Xiang Shangqiao of the end HIN2 of HVIC pipe 4111 as power device 4100
Arm input terminal VHIN is connected in 4111 inside of HVIC pipe with the input terminal of VH driving circuit 4102；The end HIN3 of HVIC pipe 4111
Input as bridge arm input terminal WHIN in the W phase of power device 4100, in 4111 inside and WH driving circuit 4103 of HVIC pipe
End is connected；U phase lower bridge arm input terminal ULIN of the end LIN1 of HVIC pipe 4111 as power device 4100, in HVIC pipe 4111
Portion is connected with the first input end of UL/VL/WL driving circuit 4104；The end LIN2 of HVIC pipe 4111 is as power device 4100
V phase lower bridge arm input terminal VLIN is connected in 4111 inside of HVIC pipe with the second input terminal of UL/VL/WL driving circuit 4104；
W phase lower bridge arm input terminal WLIN of the end LIN3 of HVIC pipe 4111 as power device 4100, in 4111 inside of HVIC pipe and UL/
The third input terminal of VL/WL driving circuit 4104 is connected；Here, six tunnels of U, V, W three-phase of power device 4100 input termination
Receive the input signal of 0V or 5V；Low-pressure area power supply negative terminal COM of the end GND of HVIC pipe 4111 as power device 100, and
It is negative with UH driving circuit 4101, VH driving circuit 4102, WH driving circuit 4103,4104 power supply of UL/VL/WL driving circuit
End is connected.
Higher-pressure region power supply anode of the end VB1 of HVIC pipe 4111 in 4111 inside and UH driving circuit 4101 of HVIC pipe
It is connected, in one end of 4111 external connection capacitor 4131 of HVIC pipe, and the U phase higher-pressure region power supply as power device 4100
Anode UVB；The end HO1 of HVIC pipe 4111 is connected in 4111 inside of HVIC pipe with the output end of UH driving circuit 4101, in HVIC
4111 outside of pipe is connected with the control electrode of bridge arm switching tube 4121 in U phase；The end VS1 of HVIC pipe 4111 is inside HVIC pipe 4111
It is connected with the higher-pressure region power supply negative terminal of UH driving circuit 4101, in 4111 outside of HVIC pipe and bridge arm switching tube in U phase
4121 output negative pole, the output cathode of U phase lower bridge arm switching tube 4124, capacitor 4131 the other end be connected, and as power
The U phase higher-pressure region power supply negative terminal UVS of device 4100.
Higher-pressure region power supply anode of the end VB2 of HVIC pipe 4111 in 4111 inside and VH driving circuit 4102 of HVIC pipe
It is connected, in one end of 4111 external connection capacitor 4132 of HVIC pipe, the U phase higher-pressure region power supply as power device 4100 is just
Hold VVB；The end HO2 of HVIC pipe 4111 is connected in 4111 inside of HVIC pipe with the output end of VH driving circuit 4102, manages in HVIC
4111 outsides are connected with the control electrode of bridge arm switching tube 4122 in V phase；The end VS2 of HVIC pipe 4111 the inside of HVIC pipe 4111 with
The higher-pressure region power supply negative terminal of VH driving circuit 4102 is connected, defeated with upper bridge arm switching tube 4122 outside HVIC pipe 4111
Cathode, the output cathode of V phase lower bridge arm switching tube 4125, the other end of capacitor 4132 are connected out, and as power device 4100
W phase higher-pressure region power supply negative terminal VVS.
Higher-pressure region power supply anode of the end VB3 of HVIC pipe 4111 in 4111 inside and WH driving circuit 4103 of HVIC pipe
It is connected, in one end of 4111 external connection capacitor 4133 of HVIC pipe, the W phase higher-pressure region power supply as power device 4100 is just
Hold WVB；The end HO3 of HVIC pipe 4111 is connected in 4111 inside of HVIC pipe with the output end of WH driving circuit 4103, manages in HVIC
4111 outsides are connected with the control electrode of bridge arm switching tube 4123 in W phase；The end VS3 of HVIC pipe 4111 the inside of HVIC pipe 4111 with
The higher-pressure region power supply negative terminal of WH driving circuit 4103 is connected, negative in 4111 outside of HVIC pipe and the output of switching tube 4123
Pole, the output cathode of W phase lower bridge arm switching tube 4126, the other end of capacitor 4133 are connected, and the W phase as power device 4100
Higher-pressure region power supply negative terminal WVS.
The end LO1 of HVIC pipe 4111 is connected with the control electrode of U phase lower bridge arm switching tube 4124；The end LO2 of HVIC pipe 4111
It is connected with the control electrode of V phase lower bridge arm switching tube 4125；The control at the end LO3 of HVIC pipe 4111 and W phase lower bridge arm switching tube 4126
System is extremely connected；U phase low reference voltage end UN of the output negative pole of U phase lower bridge arm switching tube 4124 as power device 4100；V phase
V phase low reference voltage end VN of the output negative pole of lower bridge arm switching tube 4125 as power device 4100；W phase lower bridge arm switching tube
W phase low reference voltage end WN of 4126 output negative pole as power device 4100.
The output cathode of bridge arm switching tube 4121 in U phase, the output cathode of bridge arm switching tube 4122 in V phase, bridge arm in W phase
The output cathode of switching tube 4123 is connected, and high voltage the input terminal P, P as power device 4100 generally meet 300V.Here,
The supply voltage of VDD is 15V.
The effect of HVIC pipe 4111 is:
1, when SS input terminal is high level, HO1~HO3, LO1~LO3 export the low and high level signal of 0~20V, i.e.,
Speech, when SS input terminal is high level, UH driving circuit 4101, VH driving circuit 4102, WH driving circuit 4103 and UL/VL/
The low and high level signal of the output first voltage range of WL driving circuit 4104；
2, when SS input terminal is low level, HO1~HO3, LO1~LO3 export the low and high level signal of 0~15V, i.e.,
Speech, when SS input terminal is low level, UH driving circuit 4101, VH driving circuit 4102, WH driving circuit 4103 and UL/VL/
The low and high level signal of the output second voltage range of WL driving circuit 4104.
In the embodiments of the present invention, switching tube 4121~4126 can be IGBT pipe (that is, Si device) and FRD pipe
Combination in parallel is also possible to the group of IGBT pipe and SiC SBD (Schottky Barrier Diode, Schottky diode) pipe
It closes, is also possible to SiC MOS (Metal Oxide Semiconductor, Metal-oxide-semicondutor) pipe (that is, SiC device
Part), it is also possible to the combination of SiC metal-oxide-semiconductor and FRD pipe, is also possible to the combination of SiC metal-oxide-semiconductor and SiC SBD pipe, specifically may be used
It is selected, is not particularly limited here according to actual needs.
One embodiment according to the present utility model, as shown in figure 3, working as on first, bridge arm is opened on bridge arm switching tube to third
Closing pipe 4121,4122,4123 and the first lower bridge arm switching tube to third lower bridge arm switching tube 4124,4125,4126 is Si device
When, SS input terminal is connected to the ground by binding line, the bridge arm switching tube 4121,4122 on bridge arm switching tube to third on first
With 4123 and first lower bridge arm switching tube to third lower bridge arm switching tube 4124,4125 and 4126 be SiC device when, pass through binding
SS input terminal is connected by line with power supply.
Specifically, in practical applications, referring to Fig. 3, when switching tube 4121~4126 is the assembled scheme of IGBT pipe, function
Inside rate device 4100, SS input terminal is connected by bonding line with ground (GND)；When switching tube 4121~4126 is SiC metal-oxide-semiconductor
Assembled scheme when, inside power device 4100, SS input terminal is connected by bonding line with power supply (end VCC).
The supply voltage of the power device of the utility model embodiment is that 15V is constant as a result, and peripheral circuit does not need to carry out
Modification, there is no essence to increase for the power consumption of HVIC pipe；It drives SiC device and driving Si device for same HVIC pipe, produced
There is no mixing risk in journey, be convenient for material tissue, reduces Material Cost；It drives SiC device to use the voltage of 20V, drives Si device
Part uses the voltage of 15V, makes the turn on process of SiC device and Si device all in fully on state, obtains respective performance
It plays.Also, the circuit board figure of HVIC pipe and power device is only by the bonding line in manufacturing process completely without variation
The switching of driving voltage between achievable different driving device, this SiC power device solution completely compatible with traditional Si power device
Certainly energy conservation of the scheme for the upgrading of power device, the popularization and application of power device, frequency-conversion domestic electric appliances especially convertible frequency air-conditioner
All play an important role.
The content of the utility model is further illustrated combined with specific embodiments below.
Fig. 4 a~4d is different the combination of switching tube, because 4121~4126 structure of switching tube is completely the same, with U
It is illustrated for bridge arm switching tube 4121 in phase:
Fig. 4 a shows the combination of Si IGBT and Si FRD: the collector and Si FRD of Si IGBT pipe 41211
The cathode of pipe 41212 is connected, and the output cathode as bridge arm switching tube 4121 in U phase；The emitter of Si IGBT pipe 41211
It is connected with the anode of Si FRD pipe 41212, and the output negative pole as bridge arm switching tube 4121 in U phase；Si IGBT pipe 41211
Control electrode of the grid as bridge arm switching tube 4121 in U phase.
Fig. 4 b shows the combination of Si IGBT and SiC SBD: the collector and SiC of Si IGBT pipe 41211
The cathode of SBD pipe 41212 is connected, and the output cathode as bridge arm switching tube 4121 in U phase；The transmitting of Si IGBT pipe 41211
Pole is connected with the anode of SiC SBD pipe 41212, and the output negative pole as bridge arm switching tube 4121 in U phase；Si IGBT pipe
Control electrode of 41211 grid as bridge arm switching tube 4121 in U phase.
Fig. 4 c shows the mode of SiC MOS: the drain electrode of SiC metal-oxide-semiconductor 41211 is as bridge arm switching tube 4121 in U phase
Output cathode；Output negative pole of the source electrode of SiC metal-oxide-semiconductor 41211 as bridge arm switching tube 4121 in U phase；SiC metal-oxide-semiconductor
Control electrode of 41211 grid as bridge arm switching tube 4121 in U phase.
Fig. 4 d shows the combination of SiC MOS and Si FRD: the drain electrode of SiC metal-oxide-semiconductor 41211 and Si FRD are managed
41212 cathode is connected, and the output cathode as bridge arm switching tube 4121 in U phase；The source electrode and Si of SiC metal-oxide-semiconductor 41211
The anode of FRD pipe 41212 is connected, and the output negative pole as bridge arm switching tube 4121 in U phase；The grid of SiC metal-oxide-semiconductor 41211
Control electrode as bridge arm switching tube 4121 in U phase.
Fig. 4 e shows the combination of SiC MOS and SiC SBD: the drain electrode of SiC metal-oxide-semiconductor 41211 and SiC SBD
The cathode of pipe 41212 is connected, and the output cathode as bridge arm switching tube 4121 in U phase；The source electrode of SiC metal-oxide-semiconductor 41211 with
The anode of SiC SBD pipe 41212 is connected, and the output negative pole as bridge arm switching tube 4121 in U phase；Si IGBT pipe 41211
Control electrode of the grid as bridge arm switching tube 4121 in U phase.
Fig. 5 a and Fig. 5 b show the embodiment of Shang Qiao and lower bridge driving circuit, because UH driving circuit 4101, VH drive
Dynamic circuit 4102, the structure of WH driving circuit 4103 are identical, so illustrating it in Fig. 5 a by taking UH driving circuit 4101 as an example
Structure, and it is the structure of UL/VL/WL driving circuit 4104 that Fig. 5 b, which illustrates,.
Fig. 5 a is first combined to illustrate the knot of UH driving circuit 4101, VH driving circuit 4102 or WH driving circuit 4103 below
Structure.
Referring to Fig. 5 a, UH driving circuit 4101, VH driving circuit 4102 or WH driving circuit 4103 include: the first input
Circuit 41011, the first input sub-circuit 41011 are connected with SS input terminal, and the first input sub-circuit 41011 has the first output
End, second output terminal and third output end, wherein when SS input terminal is low level, the first output end and second output terminal are defeated
Trigger pulse out, when SS input terminal is high level, the first output end, second output terminal and third output end output triggering arteries and veins
Punching；To third switching tube 41012,41013 and 41014, first switch tube 41012 is connected first switch tube with the first output end,
Second switch 41013 is connected with second output terminal, and third switching tube 41014 is connected with third output end；First voltage output
Sub-circuit 41019, first voltage export sub-circuit 41019 respectively with first switch tube to third switching tube 41012,41013 and
41014 are connected, and first voltage output sub-circuit 41019 exports second voltage range when third switching tube 41014 does not turn on
Low and high level signal, and third switching tube 41014 be connected when export first voltage range low and high level signal.
With continued reference to Fig. 5 a, first voltage output sub-circuit 41019 includes: that latch and boost module 41016, first switch
Module 41018, latch module 41015.
Wherein, it latches and boost module 41016 is connected with first switch tube 41012 and second switch 41013, first cuts
Mold changing block 41018 is connected with latch and boost module 41016 and power supply respectively, latch module 41015 and third switching tube 41014
It is connected, latch module 41015 controls the first switching module 41018, will be electric when third switching tube 41014 does not turn on
Output voltage of the source as first voltage output sub-circuit 41019 will latch and boost when third switching tube 41014 is connected
Output voltage of the output voltage of module 41016 as first voltage output sub-circuit 41019.
Specifically, as shown in Figure 5 a: inside UH driving circuit 4101, the confession of the input sub-circuit 41011 of VCC and first
Electric power positive end is connected, and HIN1 is connected with the input terminal of the first input sub-circuit 41011, SS input terminal and the first input sub-circuit
41011 control terminal is connected, the first output end and first switch tube (such as high pressure DMOS pipe) of the first input sub-circuit 41011
41012 grid is connected, the second output terminal and second switch (high pressure DMOS pipe) 41013 of the first input sub-circuit 41011
Grid be connected, first input sub-circuit 41011 third output end and third switching tube (high pressure DMOS pipe) 41014 grid
It is connected, GND and first inputs the substrate and source electrode, second of the power supply negative terminal of sub-circuit 41011, first switch tube 41012
The substrate of switching tube 41013 is connected with the substrate of source electrode, third switching tube 41014 with source electrode.
The drain electrode of first switch tube 41012 is connected with the first input end of latch and boost module 41016, second switch
41013 drain electrode is connected with the second input terminal of latch and boost module 41016, the drain electrode and latch of third switching tube 41014
The input terminal of module 41015 is connected, and (e.g., simulation is opened for the first output end and the first switching module of latch and boost module 41016
Close) 41,018 1 selection end is connected, it latches and the second output terminal of boost module 41016 and the first output sub-circuit 41017
Input terminal is connected, and the output end of latch module 41015 is connected with the control terminal of the first switching module 41018, the first switching module
41018 fixing end is connected with the power supply anode of the first output sub-circuit 41017, the power supply of VB1 and latch module 41015
Power positive end, latch are connected with 0 selection end of the power supply anode of boost module 41016, the first switching module 41018, VS1
With the power supply negative terminal, the power supply negative terminal of latch and boost module 41016, the first output son electricity of latch module 41015
The power supply negative terminal on road 41017 is connected, and HO1 is connected with the output end of the first output sub-circuit 41017.
The effect of first input sub-circuit 41011 is:
In the rising edge of the first input 41011 input end signal of sub-circuit, the first of the first input sub-circuit 41011 is defeated
Outlet exports the pulse signal that a pulse width is 300ns or so；Under the first input 41011 input end signal of sub-circuit
Drop along when, the second output terminal of the first input sub-circuit 41011 exports the pulse signal that pulse width is 300ns or so；
When the end SS of the first input sub-circuit 41011 is high level, in the third output end output one of the first input sub-circuit 41011
A pulse width is the pulse signal of 300ns or so.
The effect of latch module 41015 is:
When there is low level in 41015 input end signal of latch module, the high electricity of output end output of latch module 41015
Flat, otherwise the output end of latch module 41015 exports low level.
It latches and the effect of boost module 41016 is:
When there is low level in the first input end of latch and boost module 41016, latch and boost module 41016 the
Two output ends export permanent High level；When there is low level in the second input terminal of latch and boost module 41016, latch and
First output end of boost module 41016, which exports, continues low level.It is, the signal of HIN1 is inputted sub-circuit first
Two pulse signals that 41011 two output ends decomposite reintegrate into complete signal, also, latch and boost module
There is booster circuit inside 41016, the voltage for being 20V to VS1 in the output of the second output terminal of latch and boost module 41016.
The effect of first output sub-circuit 41017 is:
Voltage value is powered with it when voltage value is consistent with its power supply anode when exporting a high level or low level
Power supply negative terminal is consistent, phase and the consistent signal of HIN1.
Here, using the narrow pulse signal of 300ns control first switch tube to third switching tube 41012,41013,
41014, it is to reduce it by shortening first switch tube to the turn-on time of third switching tube 41012,41013,41014
Power consumption.
Its working principle is that:
The signal of HIN1 is after the first input sub-circuit 41011, respectively in the rising edge of signal and failing edge first
The first output end and second output terminal that input sub-circuit 41011 export the burst pulse of a 300ns, which controls respectively
300ns is connected in first switch tube 41012 and second switch 41013, make to latch and the first input end of boost module 41016 and
Second input terminal generates the low level of 300ns respectively, has the devices such as rest-set flip-flop inside latch and boost module 41016, makes
Two low level signals are reassembled into the completely signal with HIN1 with phase.
Wherein, when SiC metal-oxide-semiconductor is not present in switching tube, when SS input terminal is low level, first inputs sub-circuit 41011
Third output end be not in high level pulse, third switching tube 41014 does not turn on, the input terminal of latch module 41015
It is not in low level, then the output end of latch module 41015 keeps low level, the power supply electricity of the first output sub-circuit 41017
Source anode keeps being connected with 0 selection end of the first switching module 41018, i.e., is connected with VB1, such first output sub-circuit
The low and high level signal of 41017 0~15V of output.
And there are SiC metal-oxide-semiconductors in the switching tube, and when SS input terminal is high level, the of the first input sub-circuit 41011
There is high level pulse in three output ends, and the conducting of 300ns occurs in third switching tube 41014, and the input of latch module 41015 is brought out
Existing 300ns low level, then the output end of latch module 41015 exports high level, the power supply of the first output sub-circuit 41017
Anode is switched to be connected with 1 selection end of the first switching module 41018, i.e., exports with the first of latch and boost module 41016
End is connected, and such first output sub-circuit 41017 exports the low and high level signal of 0~20V.
Illustrate the structure of UL/VL/WL driving circuit 4104 in conjunction with Fig. 5 b below.
Referring to Fig. 5 b, UL/VL/WL driving circuit 4104 includes: the second input sub-circuit 41041, boosting sub-circuit 41048
Sub-circuit 41049 is exported with second voltage.Wherein, the second input sub-circuit 41041 includes the first output end to the 4th output end,
Wherein, when SS input terminal is low level, the first output end to third output end exports trigger pulse, when SS input terminal is high electricity
Usually, the first output end to the 4th output end exports trigger pulse.Supply voltage is boosted to the first electricity by boosting sub-circuit 41048
Press range.Second voltage exports sub-circuit 41049 and is connected with the second input sub-circuit 41041 and boosting sub-circuit 41048,
In, when the first output end to third output end exports trigger pulse, second voltage exports sub-circuit 41049 and exports second voltage
The low and high level signal of range, when the first output end to the 4th output end exports trigger pulse, second voltage exports sub-circuit
The low and high level signal of 41049 output first voltage ranges.
With continued reference to Fig. 5 b, second voltage output sub-circuit 41041 includes: to input sub-circuit 41041 with second respectively
UL output module 41042, VL output module 41043 and the WL output module 41044 that first output end is connected to third output end；
The second switching module being connected respectively with UL output module 41042, VL output module 41043 and WL output module 41044 is to
Four switching modules 41045,41046 and 41047, wherein the second switching module to the 4th switching module 41045,41046 and
41047 according to the 4th output end selection supply voltage of the second input sub-circuit 41041 or the output electricity for the sub-circuit 41048 that boosts
Press the output voltage as second voltage output sub-circuit.
Specifically, as shown in Figure 5 b: inside UL/VL/WL driving circuit 4104, the input sub-circuit of VCC and second
41041 power supply anode, the power supply anode for the sub-circuit 41048 that boosts, the second switching switch (e.g., analog switch)
41045 0 selection end, third switching switch (e.g., analog switch) 41046 0 selection end, the 4th switching switch (e.g., simulation is opened
Close) 41047 0 selection end be connected, LIN1 with second input sub-circuit 41041 first input end be connected, LIN2 is defeated with second
The second input terminal for entering sub-circuit 41041 is connected, and LIN3 is connected with the third input terminal of the second input sub-circuit 41041, and SS is defeated
Enter end to be connected with the control terminal of the second input sub-circuit 41041.
First output end of the second input sub-circuit 41041 is connected with the input terminal of UL output circuit 41042, the second input
The second output terminal of sub-circuit 41041 is connected with the input terminal of VL output circuit 41043, and the of the second input sub-circuit 41041
Three output ends are connected with the input terminal of WL output circuit 41044, and the 4th output end of the second input sub-circuit 41011 is respectively with the
Control terminal, the control terminal of third switching module 41046, the control terminal phase of the 4th switching module 41047 of two switching modules 41045
Even, the power supply negative terminal, the power supply negative terminal for the sub-circuit 41048 that boosts, UL of GND and the second input sub-circuit 41041 are defeated
The power supply of the power supply negative terminal of circuit 41042, the power supply negative terminal of VL output circuit 41043, WL output circuit 41044 out
Power supply negative terminal is connected, and the output end for the sub-circuit 41048 that boosts is cut respectively at the 1 of the second switching module 41045 selection end, third
Change the mold block 41046 1 selection end, the 4th switching module 41047 1 selection end be connected, LO1 and UL output circuit 41042 it is defeated
Outlet is connected, LO2 is connected with the output end of VL output circuit 41043, LO3 is connected with the output end of WL output circuit 41043.
The effect of second input sub-circuit 41041 is:
It is same in the second input 41,041 first output end of sub-circuit output and the second input 41041 first input end of sub-circuit
The signal of phase, it is same in the second input 41041 second output terminal of sub-circuit output and the second input 41,041 second input terminal of sub-circuit
The signal of phase, it is same in the second input 41041 third output end of sub-circuit output and the second input 41041 third input terminal of sub-circuit
The signal of phase.When the SS input terminal of the second input sub-circuit 41041 is high level, the of the second input sub-circuit 41041
Four output ends export high level；When the SS input terminal of the second input sub-circuit 41041 is low level, sub-circuit is inputted second
41041 the 4th output end exports low level.
The effect of boosting sub-circuit 41048 is:
The voltage for being 20V to GND in the output end output of boosting sub-circuit 41048.
The effect of UL output circuit 41042 is:
Voltage value is consistent with its power supply anode when exporting a high level, low level when voltage value and its power supply
Negative terminal is consistent, phase and the consistent signal of LIN1.
The effect of VL output circuit 41043 is:
Voltage value is consistent with its power supply anode when exporting a high level, low level when voltage value and its power supply
Negative terminal is consistent, phase and the consistent signal of LIN2.
The effect of WL output circuit 41044 is:
Voltage value is consistent with its power supply anode when exporting a high level, low level when voltage value and its power supply
Negative terminal is consistent, phase and the consistent signal of LIN3.
Its working principle is that:
The signal of LIN1, LIN2, LIN3 input sub-circuit second respectively after the second input sub-circuit 41041
41041 the first output end, second output terminal, third output end output phase are identical as LIN1, LIN2, LIN3 respectively, signal
By the square wave of shaping.
When SiC metal-oxide-semiconductor is not present in switching tube, when SS input terminal is low level, second inputs the 4th of sub-circuit 4104
Output end exports low level, and the 0 of the fixing end of the second switching module 41045 and the second switching module 41045 selects end to be connected, the
0 selection end of the fixing end of three switching modules 41046 and third switching module 41046 is connected, the 4th switching module 41047 is consolidated
0 selection end of fixed end and the 4th switching module 41047 is connected, make 0~15V of LO1 output with 41042 input terminal of UL output circuit
With phase signal, make LO2 export 0~15V with 41043 input terminal of VL output circuit with phase signal, make LO3 export 0~15V
With 41044 input terminal of WL output circuit with the signal of phase.
And there are SiC metal-oxide-semiconductors in the switching tube, and when SS input terminal is high level, the of the second input sub-circuit 41041
Four output ends export high level, the 1 of the fixing end of the second switching module 41045 and the second switching module 41045 selects end to be connected,
1 selection end of the fixing end of third switching module 41046 and third switching module 41046 is connected, the 4th switching module 41047
Fixing end is connected with 1 selection end of the 4th switching module 41047, and LO1 is made to export inputting with UL output circuit 41042 for 0~20V
Hold with phase signal, make LO2 export 0~20V with 41043 input terminal of VL output circuit with phase signal, make LO3 output 0~
20V with 41044 input terminal of WL output circuit with the signal of phase.
Above-mentioned the technical scheme in the embodiment of the utility model, at least have the following technical effects or advantages:
1, the supply voltage of the power device of the utility model embodiment is that 15V is constant, and peripheral circuit does not need to be repaired
Change, there is no essence to increase for the power consumption of high voltage integrated circuit；It drives SiC device and driving Si device is the integrated electricity of same high pressure
Road does not have mixing risk in production process, is convenient for material tissue, reduces Material Cost；SiC device is driven to use the voltage of 20V,
It drives Si device to use the voltage of 15V, makes the turn on process of SiC device and Si device all in fully on state, make respectively
Performance is played.
2, the circuit board figure of high voltage integrated circuit and power device only passes through the nation in manufacturing process completely without variation
The switching of driving voltage between different driving device can be completed in alignment.
In order to achieve the above objectives, the utility model also proposed a kind of electric appliance comprising above-mentioned power device.
In the embodiments of the present invention, above-mentioned electric appliance can for air-conditioning, washing machine, refrigerator or electromagnetic oven etc., and
The function of power device described in preceding sections may be implemented in power device therein.
The electric appliance of the utility model can be improved silicon intelligent power module and silicon carbide intelligence by above-mentioned power device
The suitability of energy power module, plays silicon intelligent power module and the performance of silicon carbide intelligent power module.
In the description of the present invention, it should be understood that term " center ", " longitudinal direction ", " transverse direction ", " length ", " width
Degree ", " thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " suitable
The orientation or positional relationship of the instructions such as hour hands ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " is orientation based on the figure
Or positional relationship, be merely for convenience of describing the present invention and simplifying the description, rather than the device of indication or suggestion meaning or
Element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as the limit to the utility model
System.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include at least one this feature.The meaning of " plurality " is at least two, such as two in the description of the present invention,
It is a, three etc., unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " Gu
It is fixed " etc. terms shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be
Mechanical connection, is also possible to be electrically connected；It can be directly connected, two can also be can be indirectly connected through an intermediary
The interaction relationship of connection or two elements inside element, unless otherwise restricted clearly.For the common skill of this field
For art personnel, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
In the present invention unless specifically defined or limited otherwise, fisrt feature is in the second feature " on " or " down "
It can be that the first and second features directly contact or the first and second features are by intermediary mediate contact.Moreover, first is special
Sign can be fisrt feature above the second feature " above ", " above " and " above " and be directly above or diagonally above the second feature, or only
Indicate that first feature horizontal height is higher than second feature.Fisrt feature under the second feature " below ", " below " and " below " can be with
It is that fisrt feature is directly under or diagonally below the second feature, or is merely representative of first feature horizontal height less than second feature.
In the description of this specification, reference term "one", "some", " example ", " specific example " or " some to show
The description of example " etc. means that this or example particular features, structures, materials, or characteristics described is combined to be contained in the utility model
In at least one or example.In the present specification, schematic expression of the above terms are necessarily directed to identical or show
Example.Moreover, particular features, structures, materials, or characteristics described can be in any one or more or example with suitable side
Formula combines.In addition, without conflicting with each other, those skilled in the art can by described in this specification different or
Example and difference or exemplary feature are combined.
Although the utility model has been shown and described above, it is to be understood that it is above-mentioned to be exemplary, it cannot
Be construed as a limitation of the present invention, those skilled in the art in the scope of the utility model can to it is above-mentioned into
Row change, modification, replacement and modification.
Claims (9)
1. a kind of power device characterized by comprising
SS input terminal；
On first on bridge arm switching tube to third bridge arm switching tube and the first lower bridge arm switching tube to third lower bridge arm switching tube；
It is connected and respectively drives the UH of bridge arm switching tube on bridge arm switching tube to third on described first with the SS input terminal
Driving circuit, VH driving circuit and WH driving circuit, wherein the UH driving circuit is connected with bridge arm switching tube on first, institute
It states VH driving circuit to be connected with bridge arm switching tube on second, the WH driving circuit is connected with bridge arm switching tube in third, wherein
When the SS input terminal is high level, the UH driving circuit, the VH driving circuit, WH driving circuit output first
The low and high level signal of voltage range, when the SS input terminal is low level, the UH driving circuit, VH driving electricity
Road, the WH driving circuit export the low and high level signal of second voltage range；
It is connected with the SS input terminal and drives the first lower bridge arm switching tube to the UL/VL/WL of third lower bridge arm switching tube
Driving circuit, the UL/VL/WL driving circuit respectively with the first lower bridge arm switching tube to third lower bridge arm switching tube phase
Even, wherein when the SS input terminal is high level, the height electricity of the UL/VL/WL driving circuit output first voltage range
Ordinary mail number, when the SS input terminal is low level, the height electricity of the UL/VL/WL driving circuit output second voltage range
Ordinary mail number.
2. power device as described in claim 1, which is characterized in that the bridge arm on bridge arm switching tube to third on described first
It is by binding line that the SS is defeated when switching tube and the first lower bridge arm switching tube to third lower bridge arm switching tube are Si device
Enter end to be connected to the ground, bridge arm switching tube and the first lower bridge arm switching tube be extremely on bridge arm switching tube to third on described first
When third lower bridge arm switching tube is SiC device, the SS input terminal is connected with power supply by binding line.
3. power device as described in claim 1, which is characterized in that the first voltage range be 0~20V, described second
Voltage range is 0~15V.
4. power device as described in claim 1, which is characterized in that the UH driving circuit, VH driving circuit or WH driving
Circuit includes:
First input sub-circuit, the first input sub-circuit are connected with SS input terminal, and described first inputs sub-circuit with the
One output end, second output terminal and third output end, wherein when the SS input terminal is low level, first output end
With second output terminal export trigger pulse, when the SS input terminal be high level when, first output end, second output terminal and
The third output end exports trigger pulse；
First switch tube to third switching tube, the first switch tube is connected with first output end, the second switch
It is connected with the second output terminal, the third switching tube is connected with the third output end；
First voltage exports sub-circuit, first voltage output sub-circuit respectively with the first switch tube to third switching tube
It is connected, the first voltage output sub-circuit exports the low and high level of second voltage range when the third switching tube does not turn on
Signal, and the third switching tube conducting when export first voltage range low and high level signal.
5. power device as claimed in claim 4, which is characterized in that the first voltage exports sub-circuit and includes:
The latch being connected with the first switch tube and second switch and boost module；
First switching module, first switching module are connected with the latch and boost module and power supply respectively；
The latch module being connected with the third switching tube, the latch module control first switching module, when
Using the power supply as the output voltage of the voltage output sub-circuit when third switching tube does not turn on, when the third is opened
When closing pipe conducting, using the output voltage of the latch and boost module as the output voltage of the voltage output sub-circuit.
6. power device as described in claim 1, which is characterized in that the UL/VL/WL driving circuit includes:
Second input sub-circuit, second input submodule include the first output end to the 4th output end, wherein as the SS
When input terminal is low level, first output end to third output end exports trigger pulse, when the SS input terminal is high electricity
Usually, first output end to the 4th output end exports trigger pulse；
Boost sub-circuit, and supply voltage is boosted to the first voltage range by the boosting sub-circuit；
The second voltage being connected with the second input sub-circuit and the boosting sub-circuit exports sub-circuit, wherein when first
When output end to third output end exports trigger pulse, the height of the second voltage output sub-circuit output second voltage range
Level signal, when first output end to the 4th output end exports trigger pulse, the second voltage output sub-circuit is defeated
The low and high level signal of first voltage range out.
7. power device as claimed in claim 6, which is characterized in that the second voltage exports sub-circuit and includes:
UL output module, the VL output mould being connected respectively with the first output end to the third output end of the second input sub-circuit
Block and WL output module；
The second switching module being connected respectively with the UL output module, VL output module and WL output module to the 4th switching mould
Block, wherein second switching module to the 4th switching module is selected according to the 4th output end of the second input sub-circuit
Output voltage of the output voltage of supply voltage or the boosting sub-circuit as second voltage output sub-circuit.
8. a kind of electric appliance, which is characterized in that including such as described in any item power devices of claim 1-7.
9. electric appliance as claimed in claim 8, which is characterized in that the electric appliance is air-conditioning.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822274282.0U CN209184504U (en) | 2018-12-29 | 2018-12-29 | Power device and electric appliance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822274282.0U CN209184504U (en) | 2018-12-29 | 2018-12-29 | Power device and electric appliance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209184504U true CN209184504U (en) | 2019-07-30 |
Family
ID=67378373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822274282.0U Expired - Fee Related CN209184504U (en) | 2018-12-29 | 2018-12-29 | Power device and electric appliance |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209184504U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802554A (en) * | 2019-03-19 | 2019-05-24 | 广东美的制冷设备有限公司 | Power device and electric appliance |
-
2018
- 2018-12-29 CN CN201822274282.0U patent/CN209184504U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109802554A (en) * | 2019-03-19 | 2019-05-24 | 广东美的制冷设备有限公司 | Power device and electric appliance |
| CN109802554B (en) * | 2019-03-19 | 2020-06-05 | 广东美的制冷设备有限公司 | Power device and electric appliance |
| WO2020186738A1 (en) * | 2019-03-19 | 2020-09-24 | 广东美的制冷设备有限公司 | Power device and electric appliance |
| EP3934076A4 (en) * | 2019-03-19 | 2022-05-11 | GD Midea Air-Conditioning Equipment Co., Ltd. | Power device and electric appliance |
| US11398821B2 (en) | 2019-03-19 | 2022-07-26 | Gd Midea Air-Conditioning Equipment Co., Ltd. | Power device and electrical appliance |
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