CN103795248A

CN103795248A - Power consumption control circuit, intelligent power module and frequency variable household appliance

Info

Publication number: CN103795248A
Application number: CN201410038933.XA
Authority: CN
Inventors: 冯宇翔
Original assignee: Guangdong Midea Refrigeration Equipment Co Ltd
Current assignee: GD Midea Air Conditioning Equipment Co Ltd
Priority date: 2014-01-26
Filing date: 2014-01-26
Publication date: 2014-05-14
Anticipated expiration: 2034-01-26
Also published as: CN103795248B

Abstract

The invention provides a power consumption control circuit which comprises a low-power-consumption switch element and a switching control module. The low-power-consumption switch element is connected to any IGBT in an intelligent power module in parallel to form a switch assembly, and the switching control module is connected to a control chip corresponding to the intelligent power module, used for only enabling any IGBT or simultaneously enabling any IGBT and the low-power-consumption switch element to be in the working state under the condition that a high-frequency working signal coming from a control chip is received, and used for only enabling the low-power-consumption switch element to be in the working state under the condition that a low-frequency working signal coming from the control chip is received. The invention further provides the intelligent power module and a frequency variable home appliance. According to the technical scheme, different on-off parts can be adopted at the different working frequencies, the power consumption of the intelligent power module is easily reduced accordingly, and the risk that the on-off parts are broken down by an overcurrent can be avoided.

Description

Power control circuit and Intelligent Power Module, frequency-conversion domestic electric appliances

Technical field

The present invention relates to power consumption control technical field, in particular to a kind of power control circuit, a kind of Intelligent Power Module and a kind of frequency-conversion domestic electric appliances.

Background technology

Intelligent Power Module, i.e. IPM(Intelligent Power Module), be a kind of by the power drive series products of power electronics and integrated circuit technique combination.Intelligent Power Module integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.Intelligent Power Module receives the control signal of MCU on the one hand, drives subsequent conditioning circuit work, sends the state detection signal of system back to MCU on the other hand.Compared with traditional discrete scheme, Intelligent Power Module wins increasing market with advantages such as its high integration, high reliability, being particularly suitable for frequency converter and the various inverter of drive motors, is the desirable power electronic device of one that is applied to frequency control, metallurgical machinery, electric traction, servo-drive, frequency-conversion domestic electric appliances.

In correlation technique, the circuit structure of Intelligent Power Module 100 as shown in Figure 1:

The VCC end of HVIC pipe 1000 is as the low-pressure area power supply anode VDD of Intelligent Power Module 100, and VDD is generally 15V; Meanwhile, managing 1000 inside at described HVIC has boostrap circuit, and boostrap circuit structure is as follows:

VCC end is connected with the low-pressure area power supply anode of UH drive circuit 101, VH drive circuit 102, WH drive circuit 103, UL drive circuit 104, VL drive circuit 105, WL drive circuit 106.

The HIN1 end of described HVIC pipe 1000 is gone up brachium pontis input UHIN mutually as the U of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described UH drive circuit 101 at described HVIC; The HIN2 end of described HVIC pipe 1000 is gone up brachium pontis input VHIN mutually as the V of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described VH drive circuit 102 at described HVIC; The HIN3 end of described HVIC pipe 1000 is gone up brachium pontis input WHIN mutually as the W of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described WH drive circuit 103 at described HVIC.

The LIN1 end of described HVIC pipe 1000 descends brachium pontis input ULIN mutually as the U of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described UL drive circuit 104 at described HVIC; The LIN2 end of described HVIC pipe 1000 descends brachium pontis input VLIN mutually as the V of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described VL drive circuit 105 at described HVIC; The LIN3 end of described HVIC pipe 1000 descends brachium pontis input WLIN mutually as the W of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described WL drive circuit 106 at described HVIC; At this, the U of described Intelligent Power Module 100, V, the input of W three-phase Liu road receive the input signal of 0V or 5V.

The GND of described HVIC pipe 1000 holds the low-pressure area power supply negative terminal COM as described Intelligent Power Module 100, and is connected with the low-pressure area power supply negative terminal of described UH drive circuit 101, described VH drive circuit 102, described WH drive circuit 103, described UL drive circuit 104, described VL drive circuit 105, described WL drive circuit 106.

The VB1 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply anode of described UH drive circuit 101, in the outside one end that connect electric capacity 131 of described HVIC pipe 1000, and as the U phase higher-pressure region power supply anode UVB of described Intelligent Power Module 100; The HO1 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the output of described UH drive circuit 101, manages 1000 outsides be connected with the grid that U goes up brachium pontis IGBT pipe 121 mutually at described HVIC; The VS1 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply negative terminal of described UH drive circuit 101, anode, the U that manages emitter-base bandgap grading, the FRD pipe 111 of 1000 outsides and described IGBT pipe 121 at described HVIC descend that the collector electrode of brachium pontis IGBT pipe 124, FRD manage 114 negative electrode, the other end of described electric capacity 131 is connected mutually, and as the U phase higher-pressure region power supply negative terminal UVS of described Intelligent Power Module 100.

The VB2 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply anode of described VH drive circuit 102, in the outside one end that connects electric capacity 132 of described HVIC pipe 1000, as the U phase higher-pressure region power supply anode VVB of described Intelligent Power Module 100; The HO2 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the output of described VH drive circuit 102, manages 1000 outsides be connected with the grid that V goes up brachium pontis IGBT pipe 123 mutually at described HVIC; The VS2 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply negative terminal of described VH drive circuit 102, anode, the V that manages emitter-base bandgap grading, the FRD pipe 112 of 1000 outsides and described IGBT pipe 122 at described HVIC descend that the collector electrode of brachium pontis IGBT pipe 125, FRD manage 115 negative electrode, the other end of described electric capacity 132 is connected mutually, and as the W phase higher-pressure region power supply negative terminal VVS of described Intelligent Power Module 100.

The VB3 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply anode of described WH drive circuit 103, in the outside one end that connects electric capacity 133 of described HVIC pipe 1000, as the W phase higher-pressure region power supply anode WVB of described Intelligent Power Module 100; The HO3 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the output of described WH drive circuit 101, manages 1000 outsides be connected with the grid that W goes up brachium pontis IGBT pipe 123 mutually at described HVIC; The VS3 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply negative terminal of described WH drive circuit 103, anode, the W that manages emitter-base bandgap grading, the FRD pipe 113 of 1000 outsides and described IGBT pipe 123 at described HVIC descend that the collector electrode of brachium pontis IGBT pipe 126, FRD manage 116 negative electrode, the other end of described electric capacity 133 is connected mutually, and as the W phase higher-pressure region power supply negative terminal WVS of described Intelligent Power Module 100.

The LO1 end of described HVIC pipe 1000 is connected with the grid of described IGBT pipe 124; The LO2 end of described HVIC pipe 1000 is connected with the grid of described IGBT pipe 125; The LO3 end of described HVIC pipe 1000 is connected with the grid of described IGBT pipe 126.

The emitter-base bandgap grading of described IGBT pipe 124 is connected with the anode of described FRD pipe 114, and as the U phase low reference voltage end UN of described Intelligent Power Module 100; The emitter-base bandgap grading of described IGBT pipe 125 is connected with the anode of described FRD pipe 115, and as the V phase low reference voltage end VN of described Intelligent Power Module 100; The emitter-base bandgap grading of described IGBT pipe 126 is connected with the anode of described FRD pipe 116, and as the W phase low reference voltage end WN of described Intelligent Power Module 100.

The negative electrode of the collector electrode of the negative electrode of the collector electrode of the negative electrode of the collector electrode of described IGBT pipe 121, described FRD pipe 111, described IGBT pipe 122, described FRD pipe 112, described IGBT pipe 123, described FRD pipe 113 is connected, and as the high voltage input P of described Intelligent Power Module 100, P generally meets 300V.

The effect of described HVIC pipe 1000 is:

VDD is the power supply anode of described HVIC pipe 1000, and GND is the power supply negative terminal (VDD-GND voltage is generally 15V) of described HVIC pipe 1000.VB1 and VS1 are respectively positive pole and the negative pole of the power supply of U phase higher-pressure region, and HO1 is the output of U phase higher-pressure region; VB2 and VS2 are respectively positive pole and the negative pole of the power supply of V phase higher-pressure region, and HO2 is the output of V phase higher-pressure region; VB3 and VS3 are respectively positive pole and the negative pole of the power supply of U phase higher-pressure region, and HO3 is the output of W phase higher-pressure region; LO1, LO2, LO3 are respectively the output of U phase, V phase, W phase low-pressure area.

The logic input signal of 0 or the 5V of input HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 is passed to respectively to output HO1, HO2, HO3 and LO1, LO2, LO3, wherein, HO1 is that logic output signal, the HO2 of VS1 or VS1+15V is that logic output signal, the HO3 of VS2 or VS2+15V is the logic output signal of VS3 or VS3+15V, and LO1, LO2, LO3 are 0 or the logic output signal of 15V.

Meanwhile, the input signal of same phase can not be high level simultaneously, and HIN1 and LIN1, HIN2 and LIN2, HIN3 and LIN3 can not be high level simultaneously.

A kind of preferred circuit when described Intelligent Power Module 100 real work is as shown in Figure 2:

External capacitor 135 between UVB and UVS; External capacitor 136 between VVB and VVS; External capacitor 137 between WVB and WVS.At this, described electric capacity 133,132,131 mainly strobes, and described electric capacity 135,136,137 mainly plays storing electricity effect.

UN, VN, WN are connected, and the Pin7 of one end of contact resistance 138 and MCU pipe 200; Another termination COM of described resistance 138.

The Pin1 of described MCU200 is connected with the UHIN end of described Intelligent Power Module 100; The Pin2 of described MCU200 is connected with the VHIN end of described Intelligent Power Module 100; The Pin3 of described MCU200 is connected with the WHIN end of described Intelligent Power Module 100; The Pin4 of described MCU200 is connected with the ULIN end of described Intelligent Power Module 100; The Pin5 of described MCU200 is connected with the VLIN end of described Intelligent Power Module 100; The Pin6 of described MCU200 is connected with the WLIN end of described Intelligent Power Module 100.

The operating state of Intelligent Power Module 100 is described as example mutually take U:

1, in the time that the pin Pin4 of described MCU200 sends high level signal, the pin Pin1 of described MCU200 must send low level signal, it is that high level, HIN1 are low level that signal makes LIN1, at this moment, LO1 exports high level and HO1 output low level, described IGBT pipe 121 cut-offs thereby described IGBT manages 124 conductings, VS1 voltage is about 0V; VCC charges to described electric capacity 133 and described electric capacity 135, when time long enough or make described electric capacity 133 and described electric capacity 135 charging before dump energy when abundant, VB1 obtains the voltage that approaches 15V to VS1.

2, in the time that the pin Pin1 of described MCU200 sends high level signal, the pin Pin4 of described MCU200 must send low level signal, it is low level that signal makes LIN1, HIN1 is high level, at this moment, LO1 output low level and HO1 output high level, thereby described IGBT pipe 124 cut-offs and described IGBT manages 121 conductings, thereby VS1 voltage is about 300V, VB1 voltage is lifted to 315V left and right, by the electric weight of described electric capacity 133 and described electric capacity 135, maintain the work of U phase higher-pressure region, if the electric weight that the duration that HIN1 is high level, enough short or described electric capacity 133 and described electric capacity 135 were stored is abundant, VB1 is more than to VS1, the voltage in the course of work of U phase higher-pressure region can remain on 14V.

In practical application, particularly, in the application of convertible frequency air-conditioner, MCU200 can adopt according to environmental change the break-make of different algorithm control Intelligent Power Module 100, and frequency-changeable compressor is operated under different frequencies:

In the time that Intelligent Power Module 100 break-makes are very fast, compressor operating is under high frequency, and at this moment, six pieces of IGBT pipes of Intelligent Power Module 100 inside (as IGBT pipe 121 to IGBT pipes 126) need to flow through larger electric current; When Intelligent Power Module 100 break-makes are when slower, compressor operating is under low frequency, and at this moment, six pieces of IGBT pipes of Intelligent Power Module 100 inside flow through less electric current.

For the state of compressor low frequency operation, wish often to obtain low-power consumption, and while using IGBT pipe as on-off element, due to the smearing of IGBT pipe, cause the switching loss of on-off element can not be very low, thereby make the loss of Intelligent Power Module 100 also can not do very lowly.

If use without the metal-oxide-semiconductor of smearing and substitute IGBT pipe, in the time of compressor low frequency operation, really can reduce break-make loss and system power dissipation, but due to the restriction of metal-oxide-semiconductor current capacity, in the time that compressor enters high-frequency work state, excessive electric current can exceed the current range that metal-oxide-semiconductor can bear and cause metal-oxide-semiconductor overcurrent to burn, and also can cause fire when serious.

In correlation technique, the low frequency operation loss that reduces Intelligent Power Module by improving the smearing of IGBT pipe realizes, but this special process makes the production cost of IGBT pipe very high, is not suitable for promoting at civil areas such as convertible frequency air-conditioners.

Therefore, how to reduce the loss of Intelligent Power Module in the time of low frequency operation, and overcurrent risk while avoiding high-frequency work, and production cost is applicable to civil area, becomes technical problem urgently to be resolved hurrily at present.

Summary of the invention

The present invention is intended at least solve one of technical problem existing in prior art or correlation technique.

For this reason, one object of the present invention is to have proposed a kind of power control circuit.

Another object of the present invention is to have proposed a kind of Intelligent Power Module.

Another object of the present invention is to have proposed a kind of frequency-conversion domestic electric appliances.

For achieving the above object, embodiment according to a first aspect of the invention, has proposed a kind of power control circuit, comprising: low-power consumption switch element, is connected in parallel to the arbitrary IGBT pipe in Intelligent Power Module, to form switch module; Switching controls module, be connected to control chip corresponding to described Intelligent Power Module, be used in the case of receiving the high-frequency work signal from described control chip, only make described arbitrary IGBT pipe or make described arbitrary IGBT pipe simultaneously and described low-power consumption switch element in running order, and in the case of receiving the low-frequency work signal from described control chip, only make described low-power consumption switch element in running order.

In this technical scheme, by making low-power consumption switch element and IGBT pipe formation in parallel switch module, and only make low-power consumption switch element in running order in Intelligent Power Module during in low frequency, thereby can avoid the smearing of IGBT pipe and cause unnecessary working loss, contribute to reduce the overall power of Intelligent Power Module.

Meanwhile, by, making IGBT pipe in running order, thereby avoid low-power consumption switch element to be punctured by overcurrent during in high frequency in Intelligent Power Module, contribute to guarantee the fail safe of intelligent power consumption module.

Wherein, low-power consumption switch element is specifically as follows metal-oxide-semiconductor, such as NMOS pipe etc., thereby can either bear the current strength of Intelligent Power Module under low frequency operation state, effectively reduces break-make loss and system loss again owing to not having smearing.

In addition, power control circuit according to the above embodiment of the present invention, can also have following additional technical characterictic:

According to one embodiment of present invention, preferably, if described switching controls module only makes described arbitrary IGBT pipe in running order in the situation that receiving described high-frequency work signal, described switching controls module comprises: switching circuit, be connected to described control chip and signal source, for conducting in the situation that receiving described high-frequency work signal, so that described source ground, and disconnect in the situation that receiving described low-frequency work signal, so that described signal source exports state control circuit to; Described state control circuit, the control end of described state control circuit is connected between described signal source and described switching circuit, for the in the situation that of described switching circuit conducting, control described arbitrary IGBT pipe in running order, and the in the situation that of described switching circuit cut-off, control described low-power consumption switch element in running order.

In this technical scheme, by switching circuit is set, the operating frequency of Intelligent Power Module is changed to the input signal variation that is reflected into state control circuit, thereby can accurately control the operating state of IGBT pipe and low-power consumption switch element.

As one comparatively preferred embodiment, described state control circuit comprises: analog switch, described analog switch comprises: control piece, be connected between described signal source and described switching circuit, the in the situation that of described switching circuit conducting, generate the first switching signal, in the situation that described switching circuit disconnects, generate the second switching signal; Be subject to control, described one end that is subject to control is connected to the signal input part that described switch module is corresponding, described in be subject to the other end of control in the situation that receiving described the first switching signal, to be connected to the first drive circuit, in the situation that receiving described the second switching signal, be connected to the second drive circuit; Wherein, described the first drive circuit for described arbitrary IGBT pipe is driven, described the second drive circuit is for driving described low-power consumption switch element.

In this technical scheme, can adopt respectively independently drive circuit to realize the driving to IGBT pipe and low-power consumption switch element, thereby can pass through the control that is connected with the first drive circuit or the second drive circuit to signal input part, thereby guarantee in the time that Intelligent Power Module is under different operating frequency, can accurately switch to corresponding drive circuit, to drive IGBT pipe or low-power consumption switch element to enter operating state.

In the time that IGBT pipe and low-power consumption switch element adopt independently drive circuit, due to the required driving voltage of low-power consumption switch element and electric current less (with respect to IGBT pipe), thereby the driving force of corresponding the second drive circuit can be less, inner the size of driving element also can be less, thereby contribute to dwindle the area occupied of the second drive circuit, reduce the production cost of Intelligent Power Module.

As another kind comparatively preferred embodiment, described state control circuit comprises: analog switch, described analog switch comprises: control piece, be connected between described signal source and described switching circuit, the in the situation that of described switching circuit conducting, generate the 3rd switching signal, in the situation that described switching circuit disconnects, generate the 4th switching signal; Be subject to control, described one end that is subject to one end of control to be connected to drive circuit, described in be subject to the other end of control in the situation that receiving described the 3rd switching signal, to be connected to described arbitrary IGBT pipe, in the situation that receiving described the 4th switching signal, to be connected to described low-power consumption switch element; Wherein, the other end of described drive circuit is connected to the signal input part that described switch module is corresponding, for described arbitrary IGBT pipe or described low-power consumption switch element are driven.

In this technical scheme, IGBT pipe and low-power consumption switch element also can adopt same one drive circuit to drive, can be by the control that is connected with this drive circuit to IGBT pipe or low-power consumption switch element, thereby guarantee in the time that Intelligent Power Module is under different operating frequency, can accurately switch to corresponding break-make device, to drive IGBT pipe or low-power consumption switch element to enter operating state.

According to another embodiment of the invention, if described switching controls module makes described arbitrary IGBT manage in the situation that receiving described high-frequency work signal and described low-power consumption switch element is in running order simultaneously, described switching controls module comprises: voltage follower circuit, be connected to described control chip, for export the first voltage in the situation that receiving described high-frequency work signal, and in the situation that receiving described low-frequency work signal, export second voltage; State control circuit, be connected to described voltage follower circuit, for at described the first voltage in the first number range in the situation that, control described arbitrary IGBT pipe and described low-power consumption switch element in running order, and in the situation that described second voltage is within the scope of second value, control described low-power consumption switch element in running order; Wherein, described the first number range refers to and is greater than the first predeterminated voltage value, and described second value scope refers to and is greater than the second predeterminated voltage value and is less than or equal to described the first predeterminated voltage value.

In this technical scheme, by the regulation and control to output voltage, be under high frequency, (to receive high-frequency work signal) to export (receiving low-frequency work signal) output second voltage under the first voltage, low frequency, the operating frequency of Intelligent Power Module can be changed to the numerical value change that is reflected into output voltage,, in conjunction with to the residing number range judgement of output voltage, can accurately control the operating state of IGBT pipe and low-power consumption switch element.

In technique scheme, preferably, described voltage follower circuit comprises: the first resistance and the second resistance, and described the first resistance and described the second resistance are connected between signal source and ground successively; Switching device and the 3rd resistance, after described switching device is connected with described the 3rd resistance, be parallel to the two ends of described the second resistance, described switching device is also connected to described control chip, for conducting in the situation that receiving described high-frequency work signal, and end in the situation that receiving described low-frequency work signal.

In this technical scheme, by conducting or the cut-off of control switch device, the operating state of the 3rd resistance is changed, i.e. when switching device conducting, after the second resistance and the 3rd resistance parallel connection, be series at the first resistance; And switching device when cut-off is only connected by the first resistance and the second resistance, thereby the numerical value of controlling output voltage changes.

In technique scheme, preferably, described state control circuit comprises: the first voltage comparator, the first input end of described the first voltage comparator is connected to common port, second input of described the first resistance and described the second resistance and inputs described the first predeterminated voltage value, for at described the first voltage in the first number range in the situation that, output the first enabling signal; Second voltage comparator, the first input end of described second voltage comparator is connected to common port, second input of described the first resistance and described the second resistance and inputs described the second predeterminated voltage value, for at described second voltage in second value scope in the situation that, output the second enabling signal; The first logical circuit, output, the second input that the first input end of described the first logical circuit is connected to described the first voltage comparator are connected to signal input part, the output that described switch module is corresponding and are connected to the first drive circuit, for in the situation that receiving described the first enabling signal to, described the first drive circuit will be exported from the signal of described signal input part; The second logical circuit, output, the second input that the first input end of described the second logical circuit is connected to described second voltage comparator is connected to described signal input part, output is connected to the second drive circuit, for in the situation that receiving described the second enabling signal to, described the second drive circuit will be exported from the signal of described signal input part; Wherein, described the first drive circuit for described arbitrary IGBT pipe is driven, described the second drive circuit is for driving described low-power consumption switch element.

In this technical scheme, can adopt respectively independently drive circuit to realize the driving to IGBT pipe and low-power consumption switch element, thereby can control whether export the signal of signal input part to the first drive circuit or the second drive circuit, thereby guarantee in the time that Intelligent Power Module is under different operating frequency, can export the signal of signal input part to corresponding drive circuit exactly, to drive IGBT pipe or low-power consumption switch element to enter operating state.

Similarly, in the time that IGBT pipe and low-power consumption switch element adopt independently drive circuit, due to the required driving voltage of low-power consumption switch element and electric current less (with respect to IGBT pipe), thereby the driving force of corresponding the second drive circuit can be less, inner the size of driving element also can be less, thereby contribute to dwindle the area occupied of the second drive circuit, reduce the production cost of Intelligent Power Module.

In technique scheme, preferably, described the first logical circuit and described the second logical circuit be logic and gate circuit.

According to the embodiment of second aspect present invention, a kind of Intelligent Power Module has been proposed, comprise the power control circuit as described in any one in technique scheme.

According to the embodiment of third aspect present invention, a kind of frequency-conversion domestic electric appliances has been proposed, comprise the Intelligent Power Module as described in technique scheme, such as convertible frequency air-conditioner, frequency conversion refrigerator, variable-frequency washing machine etc.

By above technical scheme, can be under different operating frequencies, adopt different break-make devices, thereby contribute to reduce the power consumption of Intelligent Power Module, and the risk that can not exist break-make device to be punctured by overcurrent.

Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.

Accompanying drawing explanation

Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination is understood becoming the description of embodiment obviously and easily, wherein:

Fig. 1 shows the structural representation of the Intelligent Power Module in correlation technique;

Fig. 2 show in correlation technique Intelligent Power Module is carried out to sequencing control time structural representation;

Fig. 3 A shows the structural representation of power control circuit according to an embodiment of the invention;

Fig. 3 B shows the structural representation of power control circuit according to another embodiment of the invention;

Fig. 4 shows the structural representation of Intelligent Power Module according to an embodiment of the invention;

Fig. 5 shows the concrete structure schematic diagram of power control circuit according to an embodiment of the invention;

Fig. 6 A is the structural representation of a kind of embodiment embodiment illustrated in fig. 5;

Fig. 6 B is the structural representation of another kind of embodiment embodiment illustrated in fig. 5;

Fig. 6 C is the structural representation of the Intelligent Power Module of correspondence embodiment illustrated in fig. 5;

Fig. 7 shows the concrete structure schematic diagram of power control circuit according to another embodiment of the invention;

Fig. 8 is the structural representation of a kind of embodiment embodiment illustrated in fig. 7;

Fig. 9 A is the structural representation of the Intelligent Power Module of correspondence embodiment illustrated in fig. 7;

Fig. 9 B is the structural representation of the output gating circuit in the Intelligent Power Module shown in Fig. 9 A.

Embodiment

In order more clearly to understand above-mentioned purpose of the present invention, feature and advantage, below in conjunction with the drawings and specific embodiments, the present invention is further described in detail.It should be noted that, in the situation that not conflicting, the feature in the application's embodiment and embodiment can combine mutually.

A lot of details are set forth in the following description so that fully understand the present invention; but; the present invention can also adopt other to be different from other modes described here and implement, and therefore, protection scope of the present invention is not limited to the restriction of following public specific embodiment.

One, overall structure

In correlation technique, Intelligent Power Module all adopts IGBT pipe as break-make device, but on the one hand, the smearing of IGBT pipe causes the switching loss under its low frequency too high, on the other hand, if directly use low-power consumption switch element, easily damage low-power consumption switch element because the electric current under high frequency is excessive, even the unsafe condition such as initiation fire.

Therefore,, in order to solve many-sided problem such as switching loss and overcurrent risk, Fig. 3 A shows the structural representation of power control circuit according to an embodiment of the invention.

As shown in Figure 3A, power control circuit according to an embodiment of the invention, comprise: low-power consumption switch element 111 ', be connected in parallel to the arbitrary IGBT pipe (Fig. 3 A is depicted as IGBT pipe 121) in Intelligent Power Module (than Intelligent Power Module 100 as shown in Figure 1), to form switch module (specifically not indicating in figure); Switching controls module 304, be connected to control chip corresponding to described Intelligent Power Module (as MCU), be used in the case of receiving the high-frequency work signal from described control chip, only make described arbitrary IGBT pipe or make described arbitrary IGBT pipe simultaneously and described low-power consumption switch element 111 ' in running order, and in the case of receiving the low-frequency work signal from described control chip, only make described low-power consumption switch element 111 ' in running order.

In this technical scheme, by making low-power consumption switch element 111 ' and IGBT pipe formation in parallel switch module, and only make low-power consumption switch element 111 ' in running order in Intelligent Power Module during in low frequency, thereby can avoid the smearing of IGBT pipe and cause unnecessary working loss, contribute to reduce the overall power of Intelligent Power Module.

Meanwhile, by, making IGBT pipe in running order, thereby avoid low-power consumption switch element 111 ' to be punctured by overcurrent during in high frequency in Intelligent Power Module, contribute to guarantee the fail safe of intelligent power consumption module.

Wherein, low-power consumption switch element 111 ' is specifically as follows metal-oxide-semiconductor, such as NMOS pipe etc., thereby can either bear the current strength of Intelligent Power Module under low frequency operation state, effectively reduces break-make loss and system loss again owing to not having smearing.

In Fig. 3 A, the IGBT pipe 121 of specifically going up mutually brachium pontis take U is as shown in Figure 1 illustrated as example; But in fact, obviously IGBT pipe 122, the IGBT pipe 123 that can go up mutually brachium pontis to the V phase in Intelligent Power Module, W carry out identical power consumption control, can also descend mutually IGBT pipe 124, IGBT pipe 125 and the IGBT of brachium pontis to manage 126 to U phase, V phase and W and carry out identical power consumption control.

Below in conjunction with Fig. 3 B, still take U mutually as example, the syndeton of lower brachium pontis is elaborated.Wherein, Fig. 3 B shows the structural representation of power control circuit according to another embodiment of the invention.

As shown in Figure 3 B, in another embodiment of the present invention, also can descend mutually the IGBT pipe 124 of brachium pontis to carry out power consumption control for U.Particularly, low-power consumption switch element 114 ' can be connected in parallel to IGBT and manage 124 two ends, thereby form a switch module (specifically not indicating in figure) by IGBT pipe 124 and low-power consumption switch element 114 '.

Based on said structure, the input signal of port ISO is corresponding to concrete operating frequency, and and then control IGBT pipe 124 and whether low-power consumption switch element 114 ' enters operating state by switching controls module 306, if enter operating state, the signal of being inputted by port LIN1 carries out break-make control.

Corresponding to the structure shown in Fig. 3 A and Fig. 3 B, Fig. 4 shows the structural representation of Intelligent Power Module according to an embodiment of the invention.

As shown in Figure 4, in Intelligent Power Module 4100 according to an embodiment of the invention, the power positive end VCC end of output gating circuit 4400 is as the low-pressure area power supply anode VDD of described Intelligent Power Module 4100, and VDD is generally 15V.

The first input end HIN1 of described output gating circuit 4400 goes up brachium pontis input UHIN mutually as the U of described Intelligent Power Module 4100; The second input HIN2 of described output gating circuit 4400 goes up brachium pontis input VHIN mutually as the V of described Intelligent Power Module 4100; The 3rd input HIN3 of described output gating circuit 4400 goes up brachium pontis input WHIN mutually as the W of described Intelligent Power Module 4100; The four-input terminal LIN1 of described output gating circuit 4400 descends brachium pontis input ULIN mutually as the U of described Intelligent Power Module 4100; The 5th input LIN2 of described output gating circuit 4400 descends brachium pontis input VLIN mutually as the V of described Intelligent Power Module 4100; The 6th input LIN3 of described output gating circuit 4400 descends brachium pontis input WLIN mutually as the W of described Intelligent Power Module 4100; Meanwhile, the 7th output SW of described output gating circuit 4400 is as the abnormal feedback end ISO of described Intelligent Power Module 4100.

The power supply negative terminal GND of described output gating circuit 4400 is connected with the other end of described sampling resistor 4301, and as the minimum voltage reference point N of described Intelligent Power Module 4100.

The U phase higher-pressure region power supply anode VB1 of described output gating circuit 4400 is connected with one end of electric capacity 4133, and as the U phase higher-pressure region power supply anode UVB of described Intelligent Power Module 4100; The U phase higher-pressure region power supply negative terminal VS1 of described output gating circuit 4400 is connected with the other end of described electric capacity 4133, and as the U phase higher-pressure region power supply negative terminal UVS of described Intelligent Power Module 4100.

The V phase higher-pressure region power supply anode VB2 of described output gating circuit 4400 is connected with one end of electric capacity 4132, and as the V phase higher-pressure region power supply anode VVB of described Intelligent Power Module 4100; The V phase higher-pressure region power supply negative terminal VS2 of described output gating circuit 4400 is connected with the other end of described electric capacity 4132, and as the V phase higher-pressure region power supply negative terminal VVS of described Intelligent Power Module 4100.

The W phase higher-pressure region power supply anode VB3 of described output gating circuit 4400 is connected with one end of electric capacity 4131, and as the W phase higher-pressure region power supply anode WVB of described Intelligent Power Module 4100; The W phase higher-pressure region power supply negative terminal VS3 of described output gating circuit 4400 is connected with the other end of described electric capacity 4131, and as the W phase higher-pressure region power supply negative terminal WVS of described Intelligent Power Module 4100.

The maximum voltage reference end P of described output gating circuit 4400 is as the maximum voltage reference point P of described Intelligent Power Module 4100.

Two, switching controls module

Embodiment mono-: switching controls module 306 only makes described arbitrary IGBT pipe in running order in the situation that receiving described first signal.

(1) module composition

Corresponding to the Intelligent Power Module shown in Fig. 4, Fig. 5 shows the concrete structure schematic diagram of power control circuit according to an embodiment of the invention.

As shown in Figure 5, according to one embodiment of present invention, preferably, switching controls module 304 can comprise: switching circuit 3042, in figure, describe as an example of NMOS pipe example, the grid of this NMOS pipe is connected to control chip, drain electrode by ISO port and is connected to current signal source, the substrate also ground connection that is connected with source electrode, for conducting in the situation that receiving described high-frequency work signal, so that described source ground, and disconnect in the situation that receiving described low-frequency work signal, so that described current signal source exports state control circuit 3044 to; Described state control circuit 3044, the control end of described state control circuit 3044 is connected between described current signal source and described switching circuit 3042, for the in the situation that of described switching circuit 3042 conducting, control described arbitrary IGBT pipe in running order, and in the situation that described switching circuit 3042 ends, control described low-power consumption switch element 111 ' in running order.

In this technical scheme, by switching circuit 3042 is set, the operating frequency of Intelligent Power Module is changed to the input signal variation that is reflected into state control circuit 3044, thereby can accurately control the operating state of IGBT pipe and low-power consumption switch element 111 '.

(2) circuit structure

Execution mode one

Fig. 6 A is the structural representation of a kind of embodiment embodiment illustrated in fig. 5.

As shown in Figure 6A, a preferred embodiment of the invention, described state control circuit 3044 comprises: analog switch, described analog switch comprises: control piece, be connected between described signal source (than current signal described above source) and described switching circuit 3042, the in the situation that of described switching circuit 3042 conducting, generate the first switching signal, in the situation that described switching circuit 3042 disconnects, generate the second switching signal; Be subject to control, described one end that is subject to control is connected to the signal input part that described switch module is corresponding (HIN1 port as shown in Figure 6A), described in be subject to the other end of control in the situation that receiving described the first switching signal, to be connected to the first drive circuit 4409, in the situation that receiving described the second switching signal, be connected to the second drive circuit 4410; Wherein, described the first drive circuit 4409 for described arbitrary IGBT pipe 4121 is driven, described the second drive circuit 4410 is for driving described low-power consumption switch element 4111.

In this technical scheme, can adopt respectively independently drive circuit to realize the driving to IGBT pipe 4121 and low-power consumption switch element 4111, thereby can pass through the control that is connected with the first drive circuit 4409 or the second drive circuit 4410 to signal input part, thereby guarantee in the time that Intelligent Power Module 4100 is under different operating frequency, can accurately switch to corresponding drive circuit, to drive IGBT pipe 4121 or low-power consumption switch element 4111 to enter operating state.

In the time that IGBT pipe 4121 and low-power consumption switch element 4111 adopt independently drive circuit, due to the required driving voltage of low-power consumption switch element 4111 and electric current less (with respect to IGBT pipe 4121), thereby the driving force of corresponding the second drive circuit 4410 can be less, inner the size of driving element also can be less, thereby contribute to dwindle the area occupied of the second drive circuit 4410, reduce the production cost of Intelligent Power Module 4100.

Execution mode two

Fig. 6 B is the structural representation of another kind of embodiment embodiment illustrated in fig. 5.

As shown in Figure 6B, according to another kind of preferred implementation of the present invention, described state control circuit 3044 comprises: analog switch, described analog switch comprises: control piece, be connected between described signal source (than current signal described above source) and described switching circuit 3062, the in the situation that of described switching circuit 3062 conducting, generate the 3rd switching signal, in the situation that described switching circuit 3062 disconnects, generate the 4th switching signal; Be subject to control, described one end that is subject to one end of control to be connected to drive circuit 4409 ', described in be subject to the other end of control in the situation that receiving described the 3rd switching signal, to be connected to described arbitrary IGBT pipe 4121, in the situation that receiving described the 4th switching signal, to be connected to described low-power consumption switch element 4111; Wherein, the other end of described drive circuit 4409 ' is connected to the signal input part that described switch module is corresponding (HIN1 port as shown in Figure 6B), for described arbitrary IGBT pipe 4121 or described low-power consumption switch element 4111 are driven.

In this technical scheme, IGBT pipe 4121 and low-power consumption switch element 4111 also can adopt same one drive circuit 4409 ' to drive, can be by the control that is connected with this drive circuit 4409 ' to IGBT pipe 4121 or low-power consumption switch element 4111, thereby guarantee in the time that Intelligent Power Module 4100 is under different operating frequency, can accurately switch to corresponding break-make device, to drive IGBT pipe 4121 or low-power consumption switch element 4111 to enter operating state.

(3) integrated circuit structure

Fig. 6 C is the structural representation of the Intelligent Power Module of correspondence embodiment illustrated in fig. 5.

As shown in Figure 6 C, can adopt execution mode as shown in Figure 6A for the each IGBT pipe in Intelligent Power Module 4100, realize power consumption control; Certainly, it will be understood by those skilled in the art that and adopt the execution mode shown in Fig. 6 A only for illustrating here, obviously can adopt other either types, ratio execution modes as shown in Figure 6B etc., can be used in the power consumption control realizing Intelligent Power Module 4100 equally.

Particularly, the structure of the output gating circuit 4400 in the Intelligent Power Module 4100 shown in Fig. 6 C can be:

The SW end of described output gating circuit 4400 is connected with the grid of NMOS pipe 4404, the substrate of described NMOS pipe 4404 is connected with source electrode and connects GND end, the drain electrode of described NMOS pipe 4404 and the anode of current source 4403, the control end of analog switch 4408 is connected, the negative terminal of described current source 4403 connects the VCC end of described output gating circuit 4400, the stiff end of described analog switch 4408 is connected with the HIN1 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4408 is connected with the input of UH drive circuit 4409, the low level gating end of described analog switch 4408 is connected with the input of UH drive circuit 4410, the low-pressure area power supply anode of described UH drive circuit 4409 and described UH drive circuit 4410 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described UH drive circuit 4409 and described UH drive circuit 4410 is connected with the GND of described output gating circuit 4400 end, the higher-pressure region power supply anode of described UH drive circuit 4409 and described UH drive circuit 4410 is connected with the VB1 of described output gating circuit 4400 end, the higher-pressure region power supply negative terminal of described UH drive circuit 4409 and described UH drive circuit 4410 is connected with the VS1 of described output gating circuit 4400 end, the output of described UH drive circuit 4409 is connected with the UHO1 end of described output gating circuit 4400, the output of described UH drive circuit 4410 is connected with the UHO2 end of described output gating circuit 4400.

The SW end of described output gating circuit 4400 is connected with the grid of NMOS pipe 4504, the substrate of described NMOS pipe 4504 is connected with source electrode and connects GND end, the drain electrode of described NMOS pipe 4504 and the anode of current source 4503, the control end of analog switch 4508 is connected, the negative terminal of described current source 4503 connects the VCC end of described output gating circuit 4400, the stiff end of described analog switch 4508 is connected with the HIN2 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4508 is connected with the input of VH drive circuit 4509, the low level gating end of described analog switch 4508 is connected with the input of VH drive circuit 4510, the low-pressure area power supply anode of described VH drive circuit 4509 and described VH drive circuit 4510 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described VH drive circuit 4509 and described VH drive circuit 4510 is connected with the GND of described output gating circuit 4400 end, the higher-pressure region power supply anode of described VH drive circuit 4509 and described VH drive circuit 4510 is connected with the VB2 of described output gating circuit 4400 end, the higher-pressure region power supply negative terminal of described VH drive circuit 4509 and described VH drive circuit 4510 is connected with the VS2 of described output gating circuit 4400 end, the output of described VH drive circuit 4509 is connected with the VHO1 end of described output gating circuit 4400, the output of described VH drive circuit 4510 is connected with the VHO2 end of described output gating circuit 4400.

The SW end of described output gating circuit 4400 is connected with the grid of NMOS pipe 4604, the substrate of described NMOS pipe 4604 is connected with source electrode and connects GND end, the drain electrode of described NMOS pipe 4604 and the anode of current source 4603, the control end of analog switch 4608 is connected, the negative terminal of described current source 4603 connects the VCC end of described output gating circuit 4400, the stiff end of described analog switch 4508 is connected with the HIN3 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4608 is connected with the input of WH drive circuit 4609, the low level gating end of described analog switch 4608 is connected with the input of WH drive circuit 4610, the low-pressure area power supply anode of described WH drive circuit 4609 and described WH drive circuit 4610 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described WH drive circuit 4609 and described WH drive circuit 4610 is connected with the GND of described output gating circuit 4400 end, the higher-pressure region power supply anode of described WH drive circuit 4609 and described VH drive circuit 4610 is connected with the VB3 of described output gating circuit 4400 end, the higher-pressure region power supply negative terminal of described WH drive circuit 4609 and described WH drive circuit 4610 is connected with the VS3 of described output gating circuit 4400 end, the output of described WH drive circuit 4609 is connected with the WHO1 end of described output gating circuit 4400, the output of described WH drive circuit 4610 is connected with the WHO2 end of described output gating circuit 4400.

The SW end of described output gating circuit 4400 is connected with the grid of NMOS pipe 4704, the substrate of described NMOS pipe 4704 is connected with source electrode and connects GND end, the drain electrode of described NMOS pipe 4704 and the anode of current source 4703, the control end of analog switch 4708 is connected, the negative terminal of described current source 4703 connects the VCC end of described output gating circuit 4400, the stiff end of described analog switch 4708 is connected with the LIN1 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4708 is connected with the input of UL drive circuit 4709, the low level gating end of described analog switch 4708 is connected with the input of UL drive circuit 4710, the low-pressure area power supply anode of described UL drive circuit 4709 and described UL drive circuit 4710 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described UL drive circuit 14709 and described UL drive circuit 24710 is connected with the GND of described output gating circuit 4400 end, the output of described UL drive circuit 14709 is connected with the ULO1 end of described output gating circuit 4400, the output of described UL drive circuit 24710 is connected with the ULO2 end of described output gating circuit 4400.

The SW end of described output gating circuit 4400 is connected with the grid of NMOS pipe 4804, the substrate of described NMOS pipe 4804 is connected with source electrode and connects GND end, the drain electrode of described NMOS pipe 4804 and the anode of current source 4803, the control end of analog switch 4808 is connected, the negative terminal of described current source 4803 connects the VCC end of described output gating circuit 4400, the stiff end of described analog switch 4808 is connected with the LIN2 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4808 is connected with the input of VL drive circuit 4809, the low level gating end of described analog switch 4808 is connected with the input of VL drive circuit 4810, the low-pressure area power supply anode of described VL drive circuit 4809 and described VL drive circuit 4810 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described VL drive circuit 4809 and described VL drive circuit 4810 is connected with the GND of described output gating circuit 4400 end, the output of described VL drive circuit 4809 is connected with the VLO1 end of described output gating circuit 4400, the output of described VL drive circuit 4810 is connected with the VLO2 end of described output gating circuit 4400.

The SW end of described output gating circuit 4400 is connected with the grid of NMOS pipe 4904, the substrate of described NMOS pipe 4904 is connected with source electrode and connects GND end, the drain electrode of described NMOS pipe 4904 and the anode of current source 4903, the control end of analog switch 4908 is connected, the negative terminal of described current source 4903 connects the VCC end of described output gating circuit 4400, the stiff end of described analog switch 4908 is connected with the LIN3 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4908 is connected with the input of WL drive circuit 4909, the low level gating end of described analog switch 4808 is connected with the input of WL drive circuit 4910, the low-pressure area power supply anode of described WL drive circuit 4909 and described WL drive circuit 4910 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described WL drive circuit 4909 and described WL drive circuit 4910 is connected with the GND of described output gating circuit 4400 end, the output of described WL drive circuit 4909 is connected with the WLO1 end of described output gating circuit 4400, the output of described WL drive circuit 4910 is connected with the WLO2 end of described output gating circuit 4400.

Described UHO1 end is connected with the grid of IGBT pipe 4121, and described UHO2 end is connected with the grid of NMOS pipe 4111; The collector electrode of described IGBT pipe 4121 is connected with the drain electrode of described high pressure NMOS pipe 4111 and connects the P end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4121 is connected with source electrode with the substrate of described high pressure NMOS pipe 4111 and the VS1 that connects described output gating circuit 4400 holds; Described VHO1 end is connected with the grid of IGBT pipe 4122, and described VHO2 end is connected with the grid of NMOS pipe 4112; The collector electrode of described IGBT pipe 4122 is connected with the drain electrode of described high pressure NMOS pipe 4112 and connects the P end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4122 is connected with source electrode with the substrate of described high pressure NMOS pipe 4112 and the VS2 that connects described output gating circuit 4400 holds; Described WHO1 end is connected with the grid of IGBT pipe 4123, and described WHO2 end is connected with the grid of NMOS pipe 4113; The collector electrode of described IGBT pipe 4123 is connected with the drain electrode of described high pressure NMOS pipe 4113 and connects the P end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4123 is connected with source electrode with the substrate of described high pressure NMOS pipe 4113 and the VS3 that connects described output gating circuit 4400 holds.

Described ULO1 end is connected with the grid of IGBT pipe 4124, and described ULO2 end is connected with the grid of NMOS pipe 4114; The collector electrode of described IGBT pipe 4124 is connected with the drain electrode of described high pressure NMOS pipe 4114 and connects the VS1 end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4124 is connected with source electrode with the substrate of described high pressure NMOS pipe 4114 and the UN that connects described output gating circuit 4400 holds; Described VLO1 end is connected with the grid of IGBT pipe 4125, and described VLO2 end is connected with the grid of NMOS pipe 4115; The collector electrode of described IGBT pipe 4125 is connected with the drain electrode of described high pressure NMOS pipe 4115 and connects the VS2 end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4124 is connected with source electrode with the substrate of described high pressure NMOS pipe 4115 and the VN that connects described output gating circuit 4400 holds; Described WLO1 end is connected with the grid of IGBT pipe 4125, and described WLO2 end is connected with the grid of NMOS pipe 4115; The collector electrode of described IGBT pipe 4125 is connected with the drain electrode of described high pressure NMOS pipe 4115 and connects the VS3 end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4125 is connected with source electrode with the substrate of described high pressure NMOS pipe 4115 and the WN that connects described output gating circuit 4400 holds.

(4) operation principle

Because the structure and parameter structure and parameters in full accord, three lower brachium pontis of three upper brachium pontis are in full accord, and upper brachium pontis and lower brachium pontis in full accord in gating principle, thereby go up mutually brachium pontis as example take U below, illustrate gating principle of the present invention.

In Intelligent Power Module 4100, the on off operating mode of six described IGBT pipes 4121～4126 and six described high pressure NMOS pipes 4111～4116 is all to be controlled by outside control chip MCU, and in the time that needs Intelligent Power Module 4100 is operated in high frequency, control chip MCU can hold input low level by ISO, in the time that needs Intelligent Power Module 4100 is operated in low frequency, control chip MCU can hold input high level by ISO.

Therefore, can be by the level detection to ISO end (being SW end), thus determine the operating frequency of Intelligent Power Module 4100.

1, ISO end input low level

Described NMOS pipe 4404 cut-offs, described current source 4403 is exported high level to analog switch 4408, described analog switch 4408 gating high-pressure sides, the signal of HIN1 imports described UH drive circuit 4409 into, after described UH drive circuit 4409 is processed, in the output of UHO1 end, control the break-make of described IGBT pipe 4121.

2, ISO end input high level

Described NMOS manages 4404 conductings, current source 4403 ground connection, the control end that makes analog switch 4408 is electronegative potential, described analog switch 4408 gating low-pressure ends, the signal of HIN1 imports described UH drive circuit 4410 into, after described UH drive circuit 4410 is processed, in the output of UHO2 end, control the break-make of described high pressure NMOS pipe 4111.

By the way, go up mutually the on-off element of brachium pontis for U and realized: hour, gating switch speed but the less high pressure NMOS pipe of withstanding current capability, to reduce switching loss and system loss for the electric current 1) flowing through at needs; 2), when the electric current that flows through at needs is larger, gating has smearing but the larger IGBT pipe of withstanding current capability, to avoid high pressure NMOS pipe overcurrent to puncture.

(5) parameter setting

For general high pressure NMOS pipe, current capacity is below 5A, and more than general IGBT tube current ability can reach 5A.Therefore, can consider in the time that electric current is less than 5A, gating NMOS pipe, in the time that electric current is greater than 5A, gating IGBT pipe.

The structure of described UH drive circuit 4409 and described UH drive circuit 4410 can be done in full accordly and be in full accord with prior art, consider for improving systematic function, also can the under-voltage protection voltage of described UH drive circuit 4410 be done lowlyer than described UH drive circuit 4409, because high pressure NMOS pipe only need to be lower supply power voltage just can guarantee the saturation conduction of device, thereby while making gating high pressure NMOS pipe, Intelligent Power Module can be operated under lower supply power voltage, for falling cost consideration, the size of the driving CMOS of described UH drive circuit 4410 is done littlely than described UH drive circuit 4409, because high pressure NMOS pipe only needs less current capacity just can control its conducting or shutoff, thereby save the area of described UH drive circuit 4410.

Embodiment bis-: switching controls module in the situation that receiving described first signal, make simultaneously described arbitrary IGBT pipe and described low-power consumption switch element in running order.

(1) module composition

Fig. 7 shows the concrete structure schematic diagram of power control circuit according to another embodiment of the invention.

As shown in Figure 7, according to one embodiment of present invention, preferably, switching controls module 304 as shown in Figure 3A can comprise: voltage follower circuit 3042 ', be connected to described control chip (such as being the MCU200 shown in Fig. 2), for export the first voltage in the situation that receiving described high-frequency work signal, and in the situation that receiving described low-frequency work signal, export second voltage; State control circuit 3044 ', be connected to described voltage follower circuit 3042 ', for at described the first voltage in the first number range in the situation that, control described arbitrary IGBT pipe 4121 and described low-power consumption switch element 4111 in running order, and in the situation that described second voltage is within the scope of second value, control described low-power consumption switch element 4111 in running order; Wherein, described the first number range refers to and is greater than the first predeterminated voltage value, and described second value scope refers to and is greater than the second predeterminated voltage value and is less than or equal to described the first predeterminated voltage value.

In this technical scheme, by the regulation and control to output voltage, be under high frequency, (to receive high-frequency work signal) to export (receiving low-frequency work signal) output second voltage under the first voltage, low frequency, the operating frequency of Intelligent Power Module can be changed to the numerical value change that is reflected into output voltage,, in conjunction with to the residing number range judgement of output voltage, can accurately control the operating state of IGBT pipe 4121 and low-power consumption switch element 4111.

(2) circuit structure

Fig. 8 is the structural representation of a kind of embodiment embodiment illustrated in fig. 7.

As shown in Figure 8, a preferred embodiment of the invention, the voltage follower circuit 3042 ' shown in Fig. 7 comprising: the first resistance R 1 and the second resistance R 2, described the first resistance R 1 and described the second resistance R 2 are connected between signal source VCC and ground successively; Switching device 5200 and the 3rd resistance R 3, after described switching device 5200 is connected with described the 3rd resistance R 3, be parallel to the two ends of described the second resistance R 2, described switching device 5200 is also held and is connected to described control chip by ISO, for conducting in the situation that receiving described high-frequency work signal, and end in the situation that receiving described low-frequency work signal.

In this technical scheme, by conducting or the cut-off of control switch device 5200, the operating state of the 3rd resistance R 3 is changed, i.e. when switching device 5200 conducting, after the second resistance R 2 and the 3rd resistance R 3 parallel connections, be series at the first resistance R 1; And switching device 5200 is while ending, only connected by the first resistance R 1 and the second resistance R 2, thereby the numerical value of controlling output voltage changes.

A preferred embodiment of the invention, described state control circuit 3044 ' comprising: the first voltage comparator 501, the first input end (being positive input terminal shown in figure) of described the first voltage comparator 501 is connected to common port, second input (being negative input end shown in figure) of described the first resistance R 1 and described the second resistance R 2 and inputs described the first predeterminated voltage value, for at described the first voltage in the first number range in the situation that, output the first enabling signal; Second voltage comparator 502, the first input end (being positive input terminal shown in figure) of described second voltage comparator 502 is connected to common port, second input (being negative input end shown in figure) of described the first resistance R 1 and described the second resistance R 2 and inputs described the second predeterminated voltage value, for at described second voltage in second value scope in the situation that, output the second enabling signal; The first logical circuit 503, output, the second input that the first input end of described the first logical circuit 503 is connected to described the first voltage comparator 501 is connected to the signal input part that described switch module is corresponding (being HIN1 port shown in figure), output is connected to the first drive circuit 4409, for in the situation that receiving described the first enabling signal to, described the first drive circuit 4409 will be exported from the signal of described signal input part; The second logical circuit 504, output, the second input that the first input end of described the second logical circuit 504 is connected to described second voltage comparator 502 is connected to described signal input part, output is connected to the second drive circuit 4410, for in the situation that receiving described the second enabling signal to, described the second drive circuit 4410 will be exported from the signal of described signal input part; Wherein, described the first drive circuit 4409 for described arbitrary IGBT pipe 4121 is driven, described the second drive circuit 4410 is for driving described low-power consumption switch element 4111.

In this technical scheme, can adopt respectively independently drive circuit to realize the driving to IGBT pipe 4121 and low-power consumption switch element 4111, thereby can control whether export the signal of signal input part to the first drive circuit 4409 or the second drive circuit 4410, thereby guarantee in the time that Intelligent Power Module 4100 is under different operating frequency, can export the signal of signal input part to corresponding drive circuit exactly, to drive IGBT pipe 4121 or low-power consumption switch element 4111 to enter operating state.

Similarly, in the time that IGBT pipe 4121 and low-power consumption switch element 4111 adopt independently drive circuit, due to the required driving voltage of low-power consumption switch element 4111 and electric current less (with respect to IGBT pipe), thereby the driving force of corresponding the second drive circuit 4410 can be less, inner the size of driving element also can be less, thereby contribute to dwindle the area occupied of the second drive circuit 4410, reduce the production cost of Intelligent Power Module 4100.

Wherein, the first logical circuit 503 and the second logical circuit 504 can be logic and gate circuit.

(3) integrated circuit structure

Fig. 9 A is the structural representation of the Intelligent Power Module of correspondence embodiment illustrated in fig. 7.

As shown in Figure 9 A, suppose that only the lower brachium pontis of the U phase in Intelligent Power Module, V phase, W phase carries out based on power consumption control of the present invention, describe with the integrated circuit structure of the Intelligent Power Module in embodiments of the invention two.

Certainly, those skilled in the art should understand that: no matter be the IGBT pipe of any amount in upper brachium pontis or the lower brachium pontis in Intelligent Power Module, can adopt technical scheme of the present invention, realize effective power consumption control.

So, the structure of the Intelligent Power Module based on shown in Fig. 9 A is as follows:

The power positive end VCC end of output gating circuit 4400 is as the low-pressure area power supply anode VDD of described Intelligent Power Module 4100, and VDD is generally 15V.

The first input end HIN1 of described output gating circuit 4400 goes up brachium pontis input UHIN mutually as the U of described Intelligent Power Module 4100; The second input HIN2 of described output gating circuit 4400 goes up brachium pontis input VHIN mutually as the V of described Intelligent Power Module 4100; The 3rd input HIN3 of described output gating circuit 4400 goes up brachium pontis input WHIN mutually as the W of described Intelligent Power Module 4100; The four-input terminal LIN1 of described output gating circuit 4400 descends brachium pontis input ULIN mutually as the U of described Intelligent Power Module 4100; The 5th input LIN2 of described output gating circuit 4400 descends brachium pontis input VLIN mutually as the V of described Intelligent Power Module 4100; The 6th input LIN3 of described output gating circuit 4400 descends brachium pontis input WLIN mutually as the W of described Intelligent Power Module 4100; The 7th input SW of described output gating circuit 4400 is as the switching signal input ISO of described Intelligent Power Module 4100; The power supply negative terminal GND of described output gating circuit 4400 is as the low-pressure area power supply negative terminal COM of described Intelligent Power Module 4100.

The UHO end of described output gating circuit 4400 is connected with the grid of IGBT pipe 4121, the collector electrode of described IGBT pipe 4121 is connected with the negative electrode of FRD pipe 4111 and connects the ceiling voltage point P end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4121 and described FRD manage that 4111 anode is connected and the UVS that connects described Intelligent Power Module 4100 holds; The VHO end of described output gating circuit 4400 is connected with the grid of IGBT pipe 4122, the collector electrode of described IGBT pipe 4122 is connected with the negative electrode of FRD pipe 4112 and connects the ceiling voltage point P end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4122 and described FRD manage that 4112 anode is connected and the VVS that connects described Intelligent Power Module 4100 holds; The WHO end of described output gating circuit 4400 is connected with the grid of IGBT pipe 4123, the collector electrode of described IGBT pipe 4123 is connected with the negative electrode of FRD pipe 4113 and connects the ceiling voltage point P end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4123 and described FRD manage that 4113 anode is connected and the WVS that connects described Intelligent Power Module 4100 holds.

The ULO1 end of described Intelligent Power Module 4100 is connected with the grid of IGBT pipe 4124, and the ULO2 end of described Intelligent Power Module 4100 is connected with the grid of NMOS pipe 4114; The collector electrode of described IGBT pipe 4124 is connected with the drain electrode of described high pressure NMOS pipe 4114 and connects the UVS end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4124 is connected with source electrode with the substrate of described high pressure NMOS pipe 4114 and the UN that connects described Intelligent Power Module 4100 holds; The VLO1 end of described Intelligent Power Module 4100 is connected with the grid of IGBT pipe 4125, and the VLO2 end of described Intelligent Power Module 4100 is connected with the grid of NMOS pipe 4115; The collector electrode of described IGBT pipe 4125 is connected with the drain electrode of described high pressure NMOS pipe 4115 and connects the VVS end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4124 is connected with source electrode with the substrate of described high pressure NMOS pipe 4115 and the VN that connects Intelligent Power Module 4100 holds; The WLO1 end of described Intelligent Power Module 4100 is connected with the grid of IGBT pipe 4125, and the WLO2 end of described Intelligent Power Module 4100 is connected with the grid of NMOS pipe 4115; The collector electrode of described IGBT pipe 4125 is connected with the drain electrode of described high pressure NMOS pipe 4115 and connects the WVS end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4125 is connected with source electrode with the substrate of described high pressure NMOS pipe 4115 and the WN that connects described Intelligent Power Module 4100 holds.

As shown in Figure 9 B, as one comparatively preferred embodiment, the output gating circuit 4400(in the Intelligent Power Module 4100 in Fig. 9 A is take the lower brachium pontis of U phase, V phase and W phase as example) concrete structure can be as:

The low-pressure area power supply anode VCC of described output gating circuit 4400 is connected with the low-pressure area power supply anode of one end of resistance 5202, UL drive circuit 5014, the low-pressure area power supply anode of VL drive circuit 5015, the low-pressure area power supply anode of WL drive circuit 5016.

The other end of described resistance 5202 is connected with the positive input terminal of voltage comparator 5111, the positive input terminal of voltage comparator 5113, the positive input terminal of voltage comparator 5121, the positive input terminal of voltage comparator 5123, the positive input terminal of voltage comparator 5131, the positive input terminal of voltage comparator 5133, one end of resistance 5201, one end of resistance 5203.

The anode of voltage source 5110 is connected with the negative terminal of described voltage comparator 5111, and the negative terminal of described voltage source 5110 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The anode of voltage source 5112 is connected with the negative terminal of described voltage comparator 5113, and the negative terminal of described voltage source 5112 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The output of described voltage comparator 5111 be connected with 5115 inputs of door, described and another input of door 5115 and the ULIN of described output gating circuit 4400 end are connected; The output of described voltage comparator 5113 be connected with 5114 inputs of door, described and another input of door 5114 and the ULIN of described output gating circuit 4400 end are connected; Describedly be connected with the input of described UL drive circuit 5014 with the output of door 5115, the output of described UL drive circuit 5014 is connected with the ULO1 end of described output gating circuit 4400; Describedly be connected with the input of described UL drive circuit 5024 with the output of door 5114, the output of described UL drive circuit 5024 is connected with the ULO2 end of described output gating circuit 4400.

The anode of voltage source 5120 is connected with the negative terminal of described voltage comparator 5121, and the negative terminal of described voltage source 5120 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The anode of voltage source 5122 is connected with the negative terminal of described voltage comparator 5123, and the negative terminal of described voltage source 5122 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The output of described voltage comparator 5121 be connected with 5125 inputs of door, described and another input of door 5125 and the VLIN of described output gating circuit 4400 end are connected; The output of described voltage comparator 5123 be connected with 5124 inputs of door, described and another input of door 5124 and the VLIN of described output gating circuit 4400 end are connected; Describedly be connected with the input of described VL drive circuit 5015 with the output of door 5125, the output of described VL drive circuit 5015 is connected with the VLO1 end of described output gating circuit 4400; Describedly be connected with the input of described VL drive circuit 5025 with the output of door 5124, the output of described VL drive circuit 5025 is connected with the VLO2 end of described output gating circuit 4400.

The anode of voltage source 5130 is connected with the negative terminal of described voltage comparator 5131, and the negative terminal of described voltage source 5130 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The anode of voltage source 5132 is connected with the negative terminal of described voltage comparator 5133, and the negative terminal of described voltage source 5132 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The output of described voltage comparator 5131 be connected with 5135 inputs of door, described and another input of door 5135 and the WLIN of described output gating circuit 4400 end are connected; The output of described voltage comparator 5133 be connected with 5134 inputs of door, described and another input of door 5134 and the WLIN of described output gating circuit 4400 end are connected; Describedly be connected with the input of described WL drive circuit 5016 with the output of door 5135, the output of described WL drive circuit 5016 is connected with the WLO1 end of described output gating circuit 4400; Describedly be connected with the input of described WL drive circuit 5026 with the output of door 5134, the output of described WL drive circuit 5026 is connected with the WLO2 end of described output gating circuit 4400.

The drain electrode of NMOS pipe 5200 is connected with the other end of described resistance 5203, and described NMOS manages the other end that 5200 substrate is connected with source electrode and connects described resistance 5201, and meets GND; The grid of described NMOS pipe 5200 is connected with the ISO port of described output gating circuit 4400.

The low-pressure area power supply negative terminal of the low-pressure area power supply negative terminal of the low-pressure area power supply negative terminal of described UL drive circuit 5014, UL drive circuit 5024, described VL drive circuit 5015, VL drive circuit 5025, described WL drive circuit 5016, WL drive circuit 5026 is connected, and meets GND.

(4) operation principle

Because upper brachium pontis U, V, W three-phase structure are identical and parameter arranges in full accordly, and lower brachium pontis U, V, W three-phase structure are identical and parameter arranges in full accordly, only descend mutually brachium pontis to describe as example take U herein:

1, in the time that ISO port is low level, described NMOS pipe 5200 turn-offs, and the resistance of establishing described resistance 5201 is that the resistance of R1, described resistance 5202 is that the resistance of R2, described resistance 5203 is R3, and the voltage VA that in Fig. 9 B, A is ordered is:

VA = \frac{R 1}{R 1 + R 2} \cdot VCC

The magnitude of voltage of supposing described voltage source 5110 is V1, the magnitude of voltage of described voltage source 5112 is V2, the value of design V1 and V2, make V1<VA, V2<VA, thereby make described voltage comparator 5111 and voltage comparator 5113 export high level, the signal of ULIN is after described and door 5115 and described and door 5114, produce respectively the signal identical with ULIN described with door 5115 and output described and door 5114, to control respectively described UL drive circuit 5014 and described UL drive circuit 5024.

2, in the time that ISO port is high level, described NMOS manages 5200 conductings, and the voltage VA that in Fig. 9 B, A is ordered is:

VA = \frac{R 1 | | R 3}{R 1 | | R 3 + R 2} \cdot VCC

The value of design V1 and V2, make V1>VA, V2<VA, thereby make described voltage comparator 5111 output low levels and described voltage comparator 5113 is exported high level, now, regardless of the signal of ULIN, described with door 5115 constant output low levels, describedly synchronize with ULIN signal with door 5114 output, the input perseverance of described UL drive circuit 5014 is low level, the output that makes described UL drive circuit 5014 is also correspondingly permanent is low level, therefore permanent shutoff of described IGBT pipe 4124, and the output of described UL drive circuit 5024 is controlled by ULIN, make described high pressure NMOS pipe 4114 under the effect of ULIN, guarantee normal break-make.

Wherein, the circuit structure of described UL drive circuit 5024 can be identical with the circuit structure of described UL drive circuit 5014; But because the gate capacitance of described high pressure NMOS pipe 4114 generally can be less than the gate capacitance of described IGBT pipe 4124, therefore for the consideration reducing costs, also the fan-out capability of described UL drive circuit 5024 can be suitably reduced, the break-make control of described high pressure NMOS pipe 4114 under ULIN effect can be controlled equally.

(5) parameter is selected

V1 can consider to be designed to 11V, and V2 can consider to be designed to 9V, and R1 can consider to be designed to 130k Ω, and R2 can consider to be designed to 20k Ω, and R3 can consider to be designed to 58k Ω,,

In the time that ISO port is high level, VA=13V, meets VA>V1, VA>V2;

In the time that ISO port is low level, VA=10V, meets VA<V1, VA>V2.

Because the value of R1, R2, R3 is all very large, no matter described NMOS pipe 5200 is opened or is turn-offed, and the electric current that flows through this resistance branch is all μ A rank, makes the quiescent dissipation of system can be controlled at very low level; Meanwhile, the value of V1 and V2 is larger, is to cause false triggering for fear of ground line current noise.

Certainly, the value be here only one comparatively preferred embodiment, it will be understood by those skilled in the art that and can select other numerical value according to actual conditions and demand, to realize identical control effect.

The invention allows for a kind of Intelligent Power Module, comprise the power control circuit as described in any one in technique scheme.

The invention allows for a kind of frequency-conversion domestic electric appliances, comprise the Intelligent Power Module as described in technique scheme, such as convertible frequency air-conditioner, frequency conversion refrigerator, variable-frequency washing machine etc.

More than be described with reference to the accompanying drawings technical scheme of the present invention, the present invention proposes a kind of power control circuit, a kind of Intelligent Power Module and a kind of frequency-conversion domestic electric appliances, can realize following technique effect:

In the time that Intelligent Power Module need to produce larger drive current, Intelligent Power Module can provide the on-off element with enough current capacities, because when system needs large drive current, always wish to obtain enough energy fast and pay close attention to less to power consumption, even so switching loss is now higher, do not affect overall system performance evaluation yet.

In the time that Intelligent Power Module need to produce less drive current, Intelligent Power Module can provide the on-off element that switching loss is less, because when system needs less drive current, always wish to obtain energy consumption still less, so, in the situation that current capacity meets system requirements, less switching loss can improve overall system performance evaluation.

In the time of little electric current, Intelligent Power Module of the present invention can switch to the pattern of only having the little current capacity on-off element work that switching loss is less in time, can effectively reduce the energy consumption of Intelligent Power Module; And in the time of large electric current, Intelligent Power Module of the present invention can switch to again the pattern that the on-off element that has the on-off element of larger current capacity and have small electric stream ability is worked simultaneously in time, avoid the element damage causing because electric current is excessive, effectively improve the robustness of Intelligent Power Module, avoid Intelligent Power Module because pursuing the negative effects such as low energy consumption causes that overcurrent punctures, thereby the combination property of Intelligent Power Module is improved.

Meanwhile, the on-off element when using high pressure NMOS pipe as little electric current, can directly utilize the parasitic diode of high pressure NMOS pipe self as anti-paralleled diode, make lower brachium pontis without re-using FRD pipe, aspect on-off element, compared with prior art, cost increase is very limited in the present invention; In addition, switch different on-off elements according to different current capacity demands, no longer large current switching element is proposed to harsh switching characteristic requirement, can low cost realize the little energy consumption under the little electric current of Intelligent Power Module, make the civil nature of low power-consumption intelligent power model become possibility.

The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims

1. a power control circuit, is characterized in that, comprising:

Low-power consumption switch element, is connected in parallel to the arbitrary IGBT pipe in Intelligent Power Module, to form switch module;

Switching controls module, be connected to control chip corresponding to described Intelligent Power Module, be used in the case of receiving the high-frequency work signal from described control chip, only make described arbitrary IGBT pipe or make described arbitrary IGBT pipe simultaneously and described low-power consumption switch element in running order, and in the case of receiving the low-frequency work signal from described control chip, only make described low-power consumption switch element in running order.

2. power control circuit according to claim 1, is characterized in that, if described switching controls module only makes described arbitrary IGBT pipe in running order in the situation that receiving described high-frequency work signal, described switching controls module comprises:

Switching circuit, be connected to described control chip and signal source, for conducting in the situation that receiving described high-frequency work signal, so that described source ground, and disconnect in the situation that receiving described low-frequency work signal, so that described signal source exports state control circuit to;

Described state control circuit, the control end of described state control circuit is connected between described signal source and described switching circuit, for the in the situation that of described switching circuit conducting, control described arbitrary IGBT pipe in running order, and the in the situation that of described switching circuit cut-off, control described low-power consumption switch element in running order.

3. power control circuit according to claim 2, is characterized in that, described state control circuit comprises:

Analog switch, described analog switch comprises:

Control piece, is connected between described signal source and described switching circuit, generates the first switching signal, in the situation that described switching circuit disconnects, generates the second switching signal in the situation that of described switching circuit conducting;

Be subject to control, described one end that is subject to control is connected to the signal input part that described switch module is corresponding, described in be subject to the other end of control in the situation that receiving described the first switching signal, to be connected to the first drive circuit, in the situation that receiving described the second switching signal, be connected to the second drive circuit;

Wherein, described the first drive circuit for described arbitrary IGBT pipe is driven, described the second drive circuit is for driving described low-power consumption switch element.

4. power control circuit according to claim 2, is characterized in that, described state control circuit comprises:

Analog switch, described analog switch comprises:

Control piece, is connected between described signal source and described switching circuit, generates the 3rd switching signal, in the situation that described switching circuit disconnects, generates the 4th switching signal in the situation that of described switching circuit conducting;

Be subject to control, described one end that is subject to one end of control to be connected to drive circuit, described in be subject to the other end of control in the situation that receiving described the 3rd switching signal, to be connected to described arbitrary IGBT pipe, in the situation that receiving described the 4th switching signal, to be connected to described low-power consumption switch element;

Wherein, the other end of described drive circuit is connected to the signal input part that described switch module is corresponding, for described arbitrary IGBT pipe or described low-power consumption switch element are driven.

5. power control circuit according to claim 1, it is characterized in that, if described switching controls module makes described arbitrary IGBT manage in the situation that receiving described high-frequency work signal and described low-power consumption switch element is in running order simultaneously, described switching controls module comprises:

Voltage follower circuit, is connected to described control chip, for export the first voltage in the situation that receiving described high-frequency work signal, and in the situation that receiving described low-frequency work signal, exports second voltage;

State control circuit, be connected to described voltage follower circuit, for at described the first voltage in the first number range in the situation that, control described arbitrary IGBT pipe and described low-power consumption switch element in running order, and in the situation that described second voltage is within the scope of second value, control described low-power consumption switch element in running order;

Wherein, described the first number range refers to and is greater than the first predeterminated voltage value, and described second value scope refers to and is greater than the second predeterminated voltage value and is less than or equal to described the first predeterminated voltage value.

6. power control circuit according to claim 5, is characterized in that, described voltage follower circuit comprises:

The first resistance and the second resistance, described the first resistance and described the second resistance are connected between signal source and ground successively;

Switching device and the 3rd resistance, after described switching device is connected with described the 3rd resistance, be parallel to the two ends of described the second resistance, described switching device is also connected to described control chip, for conducting in the situation that receiving described high-frequency work signal, and end in the situation that receiving described low-frequency work signal.

7. power control circuit according to claim 5, is characterized in that, described state control circuit comprises:

The first voltage comparator, the first input end of described the first voltage comparator is connected to common port, second input of described the first resistance and described the second resistance and inputs described the first predeterminated voltage value, for at described the first voltage in the first number range in the situation that, output the first enabling signal;

Second voltage comparator, the first input end of described second voltage comparator is connected to common port, second input of described the first resistance and described the second resistance and inputs described the second predeterminated voltage value, for at described second voltage in second value scope in the situation that, output the second enabling signal;

The first logical circuit, output, the second input that the first input end of described the first logical circuit is connected to described the first voltage comparator are connected to signal input part, the output that described switch module is corresponding and are connected to the first drive circuit, for in the situation that receiving described the first enabling signal to, described the first drive circuit will be exported from the signal of described signal input part;

The second logical circuit, output, the second input that the first input end of described the second logical circuit is connected to described second voltage comparator is connected to described signal input part, output is connected to the second drive circuit, for in the situation that receiving described the second enabling signal to, described the second drive circuit will be exported from the signal of described signal input part;

8. power control circuit according to claim 7, is characterized in that, described the first logical circuit and described the second logical circuit be logic and gate circuit.

9. an Intelligent Power Module, is characterized in that, comprises at least one power control circuit as described in any one in claim 1-8.

10. a frequency-conversion domestic electric appliances, is characterized in that, comprises Intelligent Power Module as claimed in claim 11.