CN203747394U

CN203747394U - Static protection device, intelligent power module and variable frequency household electrical appliance

Info

Publication number: CN203747394U
Application number: CN201320751275.XU
Authority: CN
Inventors: 冯宇翔
Original assignee: Guangdong Midea Refrigeration Equipment Co Ltd
Current assignee: GD Midea Air Conditioning Equipment Co Ltd
Priority date: 2013-11-25
Filing date: 2013-11-25
Publication date: 2014-07-30
Anticipated expiration: 2023-11-25

Abstract

The utility model provides a static protection device including a static protection module connected to any IGBT tube in an intelligent power module and used for performing static protection for said IGBT tube. The utility model also discloses the intelligent power module and a variable frequency household electrical appliance. By adopting the technical scheme provided by the utility model, damages of the IGBT tube caused by high-voltage static on a grounding terminal when power failure of the intelligent power module occurs can be avoided, so that using safety of the intelligent power module can be avoided and service lifetime of the IGBT tube can be prolonged.

Description

Electrostatic protection device, Intelligent Power Module and frequency-conversion domestic electric appliances

Technical field

The utility model relates to electrostatic protection technical field, in particular to a kind of electrostatic protection device, a kind of Intelligent Power Module and a kind of frequency-conversion domestic electric appliances.

Background technology

Intelligent Power Module, i.e. IPM(Intelligent Power Module), be a kind of by the power drive series products of power electronics and integrated circuit technique combination.Intelligent Power Module integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.Intelligent Power Module receives the control signal of MCU on the one hand, drives subsequent conditioning circuit work, sends the state detection signal of system back to MCU on the other hand.Compare with traditional discrete scheme, Intelligent Power Module wins increasing market with advantages such as its high integration, high reliability, being particularly suitable for frequency converter and the various inverter of drive motors, is a kind of desirable power electronic device that is applied to frequency control, metallurgical machinery, electric traction, servo-drive, frequency-conversion domestic electric appliances.

As shown in Figure 1, be the structural representation of a kind of Intelligent Power Module of proposing in correlation technique.Particularly, this Intelligent Power Module 100 comprises: drive chip 101 and IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) pipe 121～126.

The concrete annexation of each pin of driving chip 101 and IGBT pipe 121～126 etc. is as follows:

Drive the VCC end of chip 101 as the low-pressure area power supply anode VDD of described Intelligent Power Module 100, VDD is generally 15V; Drive the GND end of chip 101 as the low-pressure area power supply negative terminal COM of described Intelligent Power Module 100.

Drive the HIN1 of chip 101 to hold the U as described Intelligent Power Module 100 to go up mutually brachium pontis input UHIN; Drive the HIN2 of chip 101 to hold the V as described Intelligent Power Module 100 to go up mutually brachium pontis input VHIN; Drive the HIN3 of chip 101 to hold the W as described Intelligent Power Module 100 to go up mutually brachium pontis input WHIN; Drive the LIN1 of chip 101 to hold the U as described Intelligent Power Module 100 to descend mutually brachium pontis input ULIN; Drive the LIN2 of chip 101 to hold the V as described Intelligent Power Module 100 to descend mutually brachium pontis input VLIN; Drive the LIN3 of chip 101 to hold the W as described Intelligent Power Module 100 to descend mutually brachium pontis input WLIN(at this, the U of described Intelligent Power Module 100, V, the input of W three-phase Liu road receive the input signal of 0～5V).

Drive the VB1 end of chip 101 as the U phase higher-pressure region power supply anode UVB of described Intelligent Power Module 100; Drive the HO1 end of chip 101 to be connected with the grid that U goes up brachium pontis IGBT pipe 121 mutually; The FRD that drives the VS1 end of chip 101 and the emitter-base bandgap grading of described IGBT pipe 121, anode, the U of FRD pipe (fast recovery diode) 111 descend brachium pontis IGBT to manage 124 collector electrode mutually manages 114 negative electrode and is connected, and as the U phase higher-pressure region power supply negative terminal UVS of described Intelligent Power Module 100.

Drive the VB2 end of chip 101 as the V phase higher-pressure region power supply anode VVB of described Intelligent Power Module 100; Drive the HO3 end of chip 101 to be connected with the grid that V goes up brachium pontis IGBT pipe 123 mutually.Drive the VS2 end of chip 101 and the emitter-base bandgap grading of described IGBT pipe 122 FRD manage 115 negative electrode, anode, the V of FRD pipe 112 descend the collector electrode of brachium pontis IGBT pipe 125 to be mutually connected, and as the W phase higher-pressure region power supply negative terminal VVS of described Intelligent Power Module 100.

Drive the VB3 end of chip 101 as the W phase higher-pressure region power supply anode WVB of described Intelligent Power Module 100; Drive the HO3 end of chip 101 to be connected with the grid that W goes up brachium pontis IGBT pipe 123 mutually; Drive the VS3 end of chip 101 and the emitter-base bandgap grading of described IGBT pipe 123 FRD manage 116 negative electrode, anode, the W of FRD pipe 113 descend the collector electrode of brachium pontis IGBT pipe 126 to be mutually connected, and as the W phase higher-pressure region power supply negative terminal WVS of described Intelligent Power Module 100.

Drive the LO1 end of chip 101 to be connected with the grid of described IGBT pipe 124; Drive the LO2 end of chip 101 to be connected with the grid of described IGBT pipe 125; Drive the LO3 end of chip 101 to be connected with the grid of described IGBT pipe 126.

The emitter-base bandgap grading of described IGBT pipe 124 is connected with the anode of described FRD pipe 114, and as the U phase low reference voltage end UN of described Intelligent Power Module 100; The emitter-base bandgap grading of described IGBT pipe 125 is connected with the anode of described FRD pipe 115, and as the V phase low reference voltage end VN of described Intelligent Power Module 100; The emitter-base bandgap grading of described IGBT pipe 126 is connected with the anode of described FRD pipe 116, and as the W phase low reference voltage end WN of described Intelligent Power Module 100.

The negative electrode of the collector electrode of the negative electrode of the collector electrode of the negative electrode of the collector electrode of described IGBT pipe 121, described FRD pipe 111, described IGBT pipe 122, described FRD pipe 112, described IGBT pipe 123, described FRD pipe 113 is connected, and as the high voltage input P of described Intelligent Power Module 100, P generally meets 300V.

Based on above-mentioned annexation, drive the effect of chip 101 to be:

The logical signal of 0～5V of input HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 is passed to respectively to output HO1, HO2, HO3 and LO1, LO2, LO3, wherein HO1, HO2, HO3 are the logical signals of VS～VS+15V, and LO1, LO2, LO3 are the logical signals of 0～15V.

Meanwhile, drive the output circuit part of chip 101 to adopt COMS structure, the structure of Qie Liu road output is identical, take LO1 as example below, and its concrete structure is described.

As shown in Figure 2, CMOS structure comprises PMOS pipe 1001 and NMOS pipe 1002.Wherein, the substrate of PMOS pipe 1001 is connected with source electrode, and connects VCC; The substrate of NMOS pipe 1002 is connected with source electrode, and connects GND; The drain electrode of described PMOS pipe 1001 is connected with the drain electrode of described NMOS pipe 1002 and as the output of CMOS, and as LO1; The grid of described PMOS pipe 1001 is connected as the input of CMOS with the grid of described NMOS pipe 1002, is designated as INL1.

Based on above-mentioned annexation, the work schedule of CMOS is: when INL1 input high level, and LO1 output low level; When INL1 input low level, LO1 exports high level.

Because the applied environment of Intelligent Power Module 100 is disliked slightly very much, generally can be operated in for a long time high temperature and in dry environment, make when not working, Intelligent Power Module 100 need to be born the static of 2000V～3000V.

And it is to be noted: as shown in Figure 2, between the substrate of NMOS pipe 1002 and drain electrode, there is parasitic diode 1004, between GND and LO1, there is parasitic diode 1004, make to exist the GND that drives chip 101 from COM() to described parasitic diode 1004, to described IGBT, manage the path of 124 grid again, so, when COM exists the static of forward to UN or COM to UVS, there is static to the grid of emitter-base bandgap grading or described IGBT pipe 124 to collector electrode in the grid that is described IGBT pipe 124, the grid of described IGBT pipe 124 is easily subject to electrostatic breakdown.

Therefore, there is following technical problem:

If use the IGBT pipe that gate oxide thickness is thinner, Intelligent Power Module 100 is very easy to be subject to electrostatic breakdown, makes its production rate that rolls off the production line very high, also has in actual use the risk that is subject to greatly electrostatic breakdown; Due to what be damaged, be IGBT pipe, so if be damaged in actual use, be easy to cause upper and lower bridge arm conducting simultaneously, cause Intelligent Power Module 100 electric currents out of control and cause blast.

If use the IGBT pipe that gate oxide thickness is thicker, the switching speed meeting degradation of Intelligent Power Module 100, the switching loss of such Intelligent Power Module 100 is high, use occasion for switching frequency more than KHz, can cause very large caloric value, even with large as far as possible fin, the working temperature of Intelligent Power Module 100 can be higher more than 60 ℃ than ambient temperature, Intelligent Power Module 100 long-term works are under hot environment, can cause its performance degradation serious, and shorten its useful life.

Therefore, how can either guarantee that IGBT pipe has compared with high switching speed, can there is higher fail safe again, avoid suffering electrostatic breakdown, become technical problem urgently to be resolved hurrily at present.

Utility model content

The utility model is intended at least solve one of technical problem existing in prior art or correlation technique.

For this reason, an object of the present utility model is to have proposed a kind of electrostatic protection device.

Another object of the present utility model is to have proposed a kind of Intelligent Power Module.

Another object of the present utility model is to have proposed a kind of frequency-conversion domestic electric appliances.

For achieving the above object, according to the embodiment of first aspect of the present utility model, proposed a kind of electrostatic protection device, having comprised: electrostatic protection module, has been connected to the arbitrary IGBT pipe in Intelligent Power Module, for described arbitrary IGBT pipe is carried out to electrostatic protection.

In this technical scheme; for the IGBT pipe in Intelligent Power Module; by increasing independently electrostatic protection module; make when exist IGBT pipe high-pressure electrostatic time; such as driving while there is path between the ground end of chip and the grid of IGBT pipe; can to static, absorb by this electrostatic protection module, thereby avoid IGBT pipe to suffer electrostatic breakdown.

Wherein, in correlation technique, have a lot of element, circuit or equipment for electrostatic protection, the object that absorbs and protect based on static, obviously can be applied in the application's technical scheme; such as various types of ESD(Electro-Static Discharge, electrostatic impedor).

In addition, according to the electrostatic protection device of the utility model above-described embodiment, can also there is following additional technical characterictic:

According to an embodiment of the present utility model, preferably, also comprise: condition judgment module, be connected to described Intelligent Power Module, for judging the Power supply situation of described Intelligent Power Module, in the situation that the power supply of the described Intelligent Power Module of judgement is stopped power supply, generate and control the electrostatic protection instruction of carrying out electrostatic protection; Described electrostatic protection module is also connected to described condition judgment module, for receiving described electrostatic protection instruction, in the situation that described condition judgment module judges that the power supply of described Intelligent Power Module stops power supply, carries out the electrostatic protection to described arbitrary IGBT pipe.

In this technical scheme; due to only when the power supply of Intelligent Power Module is stopped power supply; just there is IGBT pipe by the possibility of electrostatic breakdown; by the monitoring to the Power supply situation of Intelligent Power Module; and only when its power supply is stopped power supply; just IGBT pipe is carried out to electrostatic protection; thereby can carry out without delay the protection to IGBT pipe on the one hand; avoid wrecking in power down moment; be on the other hand when power supply normal power supply, can prevent that electrostatic protection module from affecting the normal work of connected IGBT pipe.

Wherein, condition judgment module can be for such as voltage comparator circuit, for the supply power voltage of Intelligent Power Module and default normal voltage are compared, to judge.For the electrostatic protection instruction generating, can be concrete high level signal or low level signal, such as when the power supply normal power supply, be output as high level signal, when power supply is stopped power supply, the instruction of generation electrostatic protection, i.e. low level signal.

Certainly, for the detection of Power supply state, be not obviously necessary selection.Electrostatic protection module might not exert an influence to the operating state of IGBT pipe; And even if there is impact, but when can realizing the electrostatic protection of IGBT pipe, the impact in IGBT manages the certain limit in running order in the situation that is obviously acceptable.

According to another embodiment of the present utility model, preferably, described condition judgment module comprises: first end, and be connected to described arbitrary IGBT and manage corresponding feeder ear, detect the supply power voltage corresponding to described arbitrary IGBT pipe; The second end, is connected to described arbitrary IGBT and manages corresponding earth terminal, detects the earthed voltage corresponding to described arbitrary IGBT pipe; Voltage comparator circuit, be connected to described first end and described the second end, when the voltage difference of described supply power voltage and described earthed voltage is more than or equal to predeterminated voltage value, judge that described Power supply state is normal power supply, when described voltage difference is less than described predeterminated voltage value, judge that described Power supply state is as stopping power supply.

In this technical scheme, by arbitrary IGBT being managed to corresponding feeder ear and earth terminal carries out voltage ratio, can judge fast current Power supply situation.Wherein, each IGBT manages corresponding feeder ear and earth terminal may be different, such as: for the IGBT pipe of upper bridge, due in higher-pressure region, make its earth terminal be not 0V(and may be with respect to low-pressure area " high pressure "), feeder ear is with respect to this " low pressure " side earth terminal " high pressure " side; For the IGBT pipe of lower bridge, due in low-pressure area, making its earth terminal is 0V in theory, and feeder ear is with respect to this " low pressure " side earth terminal " high pressure " side, although should " high pressure " side may be lower than the earth terminal voltage of upper bridge IGBT pipe.

Particularly, during such as the upper brachium pontis that is arbitrary phase when described arbitrary IGBT pipe, described arbitrary IGBT manages the power supply anode that corresponding feeder ear is the high-pressure area of described arbitrary phase, and described arbitrary IGBT manages the power supply negative terminal that corresponding earth terminal is the high-pressure area of described arbitrary phase.

And when lower brachium pontis that described arbitrary IGBT pipe is described arbitrary phase, described arbitrary IGBT manages the power supply anode that corresponding feeder ear is the area of low pressure of described Intelligent Power Module, and described arbitrary IGBT manages the power supply negative terminal that corresponding earth terminal is the area of low pressure of described Intelligent Power Module.

Certainly, detection for Power supply state, obviously also can adopting other more modes, such as detect driving the operating state of chip,, detect the voltage swing etc. of the power supply that drives chip, can realize the Obtaining Accurate of above-mentioned Power supply state.

According to another embodiment of the present utility model; preferably; described electrostatic protection module is used for: according to the Power supply situation of described Intelligent Power Module; switch and present corresponding circuit characteristic; wherein, when the power supply normal power supply of described Intelligent Power Module, described electrostatic protection module presents high resistant characteristic; when the power supply of described Intelligent Power Module is stopped power supply, described electrostatic protection module presents capacitance characteristic.

In this technical scheme, by the characteristic variations of electrostatic protection module self, thereby can in the situation that do not change the annexation of electrostatic protection module and IGBT pipe, only by switching to high resistant feature, make, when the work of IGBT pipe, to avoid it to impact; By switching to capacitive characteristics, make, when the power down of IGBT pipe, to protect it to avoid electrostatic influence, contribute to reduce the complexity of circuit.

Certainly, it will be understood by those skilled in the art that the mode that electrostatic protection module also can not switched by characteristic, while avoiding IGBT to manage in working order, impact simultaneously, and carry out electrostatic protection under power-down conditions.Such as a kind of comparatively concrete in the situation that; can also between electrostatic protection module and IGBT pipe, a switch be set; when Intelligent Power Module normal power supply; this switch disconnects; avoid the impact of electrostatic protection module on IGBT pipe; when Intelligent Power Module is stopped power supply, this switch is closed, guarantees the electrostatic protection of electrostatic protection module to IGBT pipe.

According to another embodiment of the present utility model, preferably, described electrostatic protection module comprises: resistance circuit, in the situation that the power supply normal power supply of described Intelligent Power Module presents high resistant characteristic; Capacitive circuit, presents capacitance characteristic in the situation that the power supply of described Intelligent Power Module is stopped power supply; Commutation circuit, be connected to described condition judgment module, described resistance circuit and described capacitive circuit, in the situation that the power supply normal power supply of described Intelligent Power Module, closed described resistance circuit and described arbitrary IGBT pipe be connected, disconnect being connected of described capacitive circuit and described arbitrary IGBT pipe, and in the situation that the power supply of described Intelligent Power Module is stopped power supply, disconnect being connected of described resistance circuit and described arbitrary IGBT pipe, closed described capacitive circuit is connected with described arbitrary IGBT pipe.

Further, described resistance circuit can comprise resistance, and one end of described resistance is connected to the grid of described arbitrary IGBT pipe; Described capacitive circuit can comprise electric capacity, and the positive pole of described electric capacity is connected to the grid of described arbitrary IGBT pipe, and the negative pole of described electric capacity is connected to described arbitrary IGBT and manages corresponding earth terminal; Described commutation circuit can comprise switching device, the first end of described switching device is connected to the other end, the 3rd end that described condition judgment module, the second end be connected to described resistance and is connected to described arbitrary IGBT and manages corresponding earth terminal, wherein, described switching device is in the situation that the power supply normal power supply of above-mentioned Intelligent Power Module, closed described resistance and described arbitrary IGBT manage the connection of corresponding earth terminal, and in the situation that the power supply of described Intelligent Power Module is stopped power supply, disconnect the connection that described resistance and described arbitrary IGBT manage corresponding earth terminal.

In this technical scheme, should the concrete model of resistance and electric capacity and intrinsic numeric be selected and be arranged, make when switching to resistance, can present high-impedance state, and when switching to electric capacity, can effectively absorb static.

And for switching device, obviously there are multiple choices, such as relay etc.; And the complexity of building in order to reduce circuit, improve switching efficiency, as a kind of specific embodiment, can adopt switching tube, described switching tube is saturation conduction when the power supply normal power supply of above-mentioned Intelligent Power Module, cut-off when the power supply of described Intelligent Power Module is stopped power supply.

According to the embodiment of the utility model second aspect, a kind of Intelligent Power Module has been proposed, comprise at least one electrostatic protection device as described in any one in technique scheme.

According to the embodiment of the utility model third aspect, a kind of frequency-conversion domestic electric appliances has been proposed, comprise above-mentioned Intelligent Power Module, such as convertible frequency air-conditioner, frequency conversion refrigerator, variable-frequency washing machine etc.

By above technical scheme, can the in the situation that of Intelligent Power Module power down, avoid the high-pressure electrostatic of earth terminal to cause the destruction to IGBT pipe, guarantee the safety in utilization of Intelligent Power Module, extend its useful life.

Additional aspect of the present utility model and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present utility model.

Accompanying drawing explanation

Above-mentioned and/or additional aspect of the present utility model and advantage accompanying drawing below combination obviously and is easily understood becoming the description of embodiment, wherein:

Fig. 1 shows the structural representation of the Intelligent Power Module in correlation technique;

Fig. 2 shows the structural representation of the output port of the driving chip in the Intelligent Power Module in correlation technique;

Fig. 3 A shows according to the electrical block diagram of the electrostatic protection device of the IGBT pipe for upper brachium pontis of an embodiment of the present utility model;

Fig. 3 B shows according to the electrical block diagram of the electrostatic protection device of the IGBT pipe for lower brachium pontis of an embodiment of the present utility model;

Fig. 4 A shows according to the structural representation of the Intelligent Power Module of an embodiment of the present utility model;

Fig. 4 B shows according to the structural representation of the Intelligent Power Module of another embodiment of the present utility model;

Fig. 5 shows according to the structural representation of the electrostatic protection module of an embodiment of the present utility model;

Fig. 6 is the structural representation of electrostatic protection module embodiment illustrated in fig. 5;

Fig. 7 is the concrete structure schematic diagram of electrostatic protection module embodiment illustrated in fig. 6;

Fig. 8 shows according to the structural representation of the electrostatic protection device of an embodiment of the present utility model.

Embodiment

In order more clearly to understand above-mentioned purpose of the present utility model, feature and advantage, below in conjunction with the drawings and specific embodiments, the utility model is further described in detail.It should be noted that, in the situation that not conflicting, the application's embodiment and the feature in embodiment can combine mutually.

A lot of details have been set forth in the following description so that fully understand the utility model; but; the utility model can also adopt other to be different from other modes described here and implement, and therefore, protection range of the present utility model is not limited to the restriction of following public specific embodiment.

Based on the purpose of this utility model,, for the electrostatic protection of the IGBT pipe in Intelligent Power Module, the utility model proposes a kind of electrostatic protection device, can carry out electrostatic protection to described arbitrary IGBT pipe.

The concrete structure of the Intelligent Power Module 100 based on shown in Fig. 1 is known, for every phase circuit, all comprise corresponding to the upper brachium pontis IGBT pipe of higher-pressure region with corresponding to the lower brachium pontis IGBT pipe of low-pressure area, such as for U phase circuit, IGBT pipe 121 be that upper brachium pontis, IGBT pipe 124 are lower brachium pontis.For convenience of explanation, respectively for the IGBT pipe of upper brachium pontis and lower brachium pontis, the concrete annexation of electrostatic protection device is elaborated below.

Fig. 3 A shows according to the electrical block diagram of the electrostatic protection device of the IGBT pipe for upper brachium pontis of an embodiment of the present utility model.

As shown in Figure 3A, electrostatic protection device comprises: electrostatic protection module 302.This electrostatic protection module 302 is connected to the arbitrary IGBT pipe in Intelligent Power Module, for described arbitrary IGBT pipe is carried out to electrostatic protection.

For convenience of explanation, in the technical scheme shown in Fig. 3 A, what electrostatic protection module 302 connected is the upper brachium pontis IGBT pipe (being the IGBT121 shown in Fig. 1) in U phase circuit.Particularly, in Fig. 3 A, to be connected to the grid of brachium pontis IGBT pipe on this, represent to be connected to this IGBT pipe.

By increasing independently electrostatic protection module 302; make when exist IGBT pipe high-pressure electrostatic time; such as driving while there is path between the ground end of chip and the grid of IGBT pipe, can absorb by 302 pairs of static of this electrostatic protection module, thereby avoid IGBT pipe to suffer electrostatic breakdown.

Wherein, in correlation technique, there is a lot of element, circuit or equipment for electrostatic protection; the object that absorbs and protect based on static; obviously can be applied to using as electrostatic protection module 302 in the application's technical scheme; such as various types of ESD(Electro-Static Discharge, electrostatic impedor).

As a kind of preferred version, in electrostatic protection device, can also comprise: condition judgment module 304, is connected to described Intelligent Power Module, for judging the Power supply situation of described Intelligent Power Module; Described electrostatic protection module 302 is also connected to described condition judgment module 304, in the situation that the power supply of the described Intelligent Power Module of described condition judgment module 304 judgement is stopped power supply, described arbitrary IGBT pipe is carried out to electrostatic protection.

In this technical scheme; due to only when the power supply of Intelligent Power Module is stopped power supply; just there is IGBT pipe by the possibility of electrostatic breakdown; by the monitoring to the Power supply situation of Intelligent Power Module; and only when its power supply is stopped power supply; just IGBT pipe is carried out to electrostatic protection; thereby can carry out without delay the protection to IGBT pipe on the one hand; avoid wrecking in power down moment; be on the other hand when power supply normal power supply, can prevent the normal work of the IGBT pipe that 302 impacts of electrostatic protection module are connected.

Certainly, for the detection of Power supply state, be not obviously necessary selection.Electrostatic protection module 302 might not exert an influence to the operating state of IGBT pipe; And even if there is impact, but when can realizing the electrostatic protection of IGBT pipe, the impact in IGBT manages the certain limit in running order in the situation that is obviously acceptable.

Fig. 3 B shows according to the electrical block diagram of the electrostatic protection device of the IGBT pipe for lower brachium pontis of an embodiment of the present utility model.

As shown in Figure 3 B, similar ground, for the lower brachium pontis IGBT pipe in Intelligent Power Module, electrostatic protection device also can comprise: electrostatic protection module 302.This electrostatic protection module 302 is connected to the arbitrary IGBT pipe in Intelligent Power Module, for described arbitrary IGBT pipe is carried out to electrostatic protection.

For convenience of explanation, in the technical scheme shown in Fig. 3 B, what electrostatic protection module 302 connected is the lower brachium pontis IGBT pipe (being the IGBT126 shown in Fig. 1) in U phase circuit, i.e. the IGBT of below pipe in Fig. 3 B; And the IGBT pipe of top is the upper brachium pontis IGBT pipe in U phase circuit.Particularly, in Fig. 3 B, to be connected to the grid of this lower brachium pontis IGBT pipe, represent to be connected to this IGBT pipe.

Similarly, as a kind of preferred version, in electrostatic protection device, can also comprise: condition judgment module 304, is connected to described Intelligent Power Module, for judging the Power supply situation of described Intelligent Power Module; Described electrostatic protection module 302 is also connected to described condition judgment module 304, in the situation that the power supply of the described Intelligent Power Module of described condition judgment module 304 judgement is stopped power supply, described arbitrary IGBT pipe is carried out to electrostatic protection.

In the circuit connection structure of the upper brachium pontis shown in Fig. 3 A and Fig. 3 B difference and lower brachium pontis, as a kind of concrete circuit structure and connected mode, condition judgment module 304 specifically can comprise:

First end, is connected to described arbitrary IGBT and manages corresponding feeder ear, detects the supply power voltage corresponding to described arbitrary IGBT pipe; The second end, is connected to described arbitrary IGBT and manages corresponding earth terminal, detects the earthed voltage corresponding to described arbitrary IGBT pipe; Voltage comparator circuit, be connected to described first end and described the second end, when the voltage difference of described supply power voltage and described earthed voltage is more than or equal to predeterminated voltage value, judge that described Power supply state is normal power supply, when described voltage difference is less than described predeterminated voltage value, judge that described Power supply state is as stopping power supply.

Wherein, in the situation shown in Fig. 3 A, because upper brachium pontis IGBT pipe is positioned at higher-pressure region, its earth terminal is relative ground, be not 0V, even may be with respect to low-pressure area " high pressure ", and feeder ear is also with respect to this " low pressure " side earth terminal " high pressure " side.Therefore, first end is terminal A 1, be connected to UVB end, and the second end is terminal B 1, is connected to UVS end.

In the situation shown in Fig. 3 B, because lower brachium pontis IGBT pipe is positioned at low-pressure area, its earth terminal is 0V in theory, and feeder ear, may be lower than the earth terminal voltage of upper bridge IGBT pipe although be somebody's turn to do " high pressure " side with respect to this " low pressure " side earth terminal " high pressure " side.Therefore, first end is terminal A 2, be connected to the power supply VDD of drive circuit 101, and the second end is terminal B 2, is connected to UN end.

Detection mode as a kind of concrete Power supply state, Fig. 3 A and the relative feeder ear for certain IGBT pipe shown in Fig. 3 B and the detection of earth terminal, can carry out fast reaction to the change in voltage on circuit, thereby judge rapidly current Power supply situation, avoid power down moment to cause IGBT pipe to be destroyed by high-pressure electrostatic.

Fig. 4 A shows according to the structural representation of the Intelligent Power Module of an embodiment of the present utility model.

As shown in Figure 4 A, each the IGBT pipe in Intelligent Power Module 10 has been applied the electrostatic protection device shown in Fig. 3 A or Fig. 3 B, i.e. " ESD tolerance promotes circuit 41～46 ", to realize the electrostatic defending to IGBT pipe.

Wherein, the concrete line construction of Intelligent Power Module 10 comprises:

The VCC of drive circuit (or driving chip) 40 is as the vdd terminal of described Intelligent Power Module 10, and VDD is the low-pressure area power supply of described Intelligent Power Module 10, and VDD is generally 15V.

The HIN1 end of described drive circuit 40 is gone up brachium pontis input UHIN mutually as the U of described Intelligent Power Module 10; The HIN2 end of described drive circuit 40 is gone up brachium pontis input VHIN mutually as the V of described Intelligent Power Module 10; The HIN3 end of described drive circuit 40 is gone up brachium pontis input WHIN mutually as the W of described Intelligent Power Module 10; The LIN1 end of described drive circuit 40 descends brachium pontis input ULIN mutually as the U of described Intelligent Power Module 10; The LIN2 end of described drive circuit 40 descends brachium pontis input VLIN mutually as the V of described Intelligent Power Module 10; The LIN3 end of described drive circuit 40 descends brachium pontis input WLIN(at this as the W of described Intelligent Power Module 10 mutually, and the U of described Intelligent Power Module 10, V, the input of W three-phase Liu road receive the input signal of 0～5V).

The first input/output terminal that the VB1 end of described drive circuit 40 and ESD tolerance promote circuit 41 is connected and as the U phase higher-pressure region power supply anode UVB of described Intelligent Power Module 10; The first input/output terminal that the VB2 end of described drive circuit 40 and ESD tolerance promote circuit 42 is connected and as the V phase higher-pressure region power supply anode VVB of described Intelligent Power Module 10; The first input/output terminal that the VB3 end of described drive circuit 40 and ESD tolerance promote circuit 43 is connected and as the W phase higher-pressure region power supply anode WVB of described Intelligent Power Module 10.

The VS1 end of described drive circuit 40 and ESD tolerance promote circuit 41 the second input/output terminal, the emitter-base bandgap grading of described IGBT pipe 21, the collector electrode of the anode of FRD pipe 11, IGBT pipe 24, the negative electrode of FRD pipe 14 be connected, and as the U phase higher-pressure region power supply negative terminal UVS of described Intelligent Power Module 10; The VS2 end of described drive circuit 40 and ESD tolerance promote circuit 42 the second input/output terminal, the emitter-base bandgap grading of described IGBT pipe 22, the collector electrode of the anode of FRD pipe 12, IGBT pipe 25, the negative electrode of FRD pipe 15 be connected, and as the V phase higher-pressure region power supply negative terminal VVS of described Intelligent Power Module 10; The VS3 end of described drive circuit 40 and ESD tolerance promote circuit 43 the second input/output terminal, the emitter-base bandgap grading of described IGBT pipe 23, the collector electrode of the anode of FRD pipe 13, IGBT pipe 26, the negative electrode of FRD pipe 16 be connected, and as the W phase higher-pressure region power supply negative terminal WVS of described Intelligent Power Module 10.

The negative electrode of the collector electrode of the negative electrode of the collector electrode of the negative electrode of the collector electrode of described IGBT pipe 21, described FRD pipe 11, described IGBT pipe 22, described FRD pipe 12, described IGBT pipe 23, described FRD pipe 13 is connected, and as the high voltage input P of described Intelligent Power Module 10, P generally meets 300V.

The emitter-base bandgap grading of described IGBT pipe 24 is connected with the 3rd input/output terminal that the anode of FRD pipe 14, described ESD tolerance promote circuit 44, and as the U phase low reference voltage end UN of described Intelligent Power Module 10; The emitter-base bandgap grading of described IGBT pipe 25 is connected with the 3rd input/output terminal that the anode of FRD pipe 15, described ESD tolerance promote circuit 45, and as the V phase low reference voltage end VN of described Intelligent Power Module 10; The emitter-base bandgap grading of described IGBT pipe 26 is connected with the 3rd input/output terminal that the anode of FRD pipe 16, described ESD tolerance promote circuit 46, and as the W phase low reference voltage end WN of described Intelligent Power Module 10.

The HO1 end of described drive circuit 40 is connected with the 3rd input/output terminal that the grid of IGBT pipe 21, described ESD tolerance promote circuit 41; The HO2 end of described drive circuit 40 is connected with the 3rd input/output terminal that the grid of IGBT pipe 22, described ESD tolerance promote circuit 42; The HO3 end of described drive circuit 40 is connected with the 3rd input/output terminal that the grid of IGBT pipe 23, described ESD tolerance promote circuit 43.

The LO1 end of described drive circuit 40 is connected with the 3rd input/output terminal that the grid of IGBT pipe 24, described ESD tolerance promote circuit 44; The LO2 end of described drive circuit 40 is connected with the 3rd input/output terminal that the grid of IGBT pipe 25, described ESD tolerance promote circuit 45; The LO3 end of described drive circuit 40 is connected with the 3rd input/output terminal that the grid of IGBT pipe 26, described ESD tolerance promote circuit 46.

Wherein, the effect of drive circuit 40 is: the 0～5V signal that receives UHIN, VHIN, WHIN, ULIN, VLIN, six inputs of WLIN, pass to respectively output HO1, HO2, HO3 and LO1, LO2, LO3, wherein HO1, HO2, HO3 are the logical signals of VS～VS+15V, and LO1, LO2, LO3 are the logical signals of 0～15V.It is identical with the effect of the described HVIC pipe 101 of prior art.

Simultaneously, described ESD tolerance promotes circuit 41, described ESD tolerance and promotes circuit 42, described ESD tolerance and promote circuit 43, described ESD tolerance and promote circuit 44, described ESD tolerance and promote structure that circuit 45, described ESD tolerance promote circuit 46 and act on identically, is connected to respectively IGBT pipe separately.

Certainly, although Fig. 3 A and Fig. 3 B show a kind of detection mode of concrete Power supply state, but the detection for Power supply state, obviously also can adopt other more modes, such as detect driving the operating state of chip,, detect the voltage swing etc. of the power supply that drives chip, can realize the Obtaining Accurate of above-mentioned Power supply state.Below in conjunction with Fig. 4 B, a kind of comparatively concrete detection mode is wherein elaborated.

Fig. 4 B shows according to the structural representation of the Intelligent Power Module of another embodiment of the present utility model.

As shown in Figure 4 B, in Intelligent Power Module, only comprise a state detection module 304, it is connected to the power supply VDD side that drives chip 101, for directly the electric power thus supplied of this VDD side being detected.

Simultaneously; each IGBT pipe is connected to an electrostatic protection module 302; and this state detection module 304 is connected to respectively each electrostatic protection module 302, and the Power supply state detecting is fed back to all electrostatic protection modules 302 simultaneously, to determine whether to carry out electrostatic protection.

In the technical solution of the utility model; for the electrostatic protection module 302 in above-mentioned arbitrary technical scheme; a kind of concrete protected mode has been proposed; comprise: electrostatic protection module 302 is according to the Power supply situation of described Intelligent Power Module; switch and present corresponding circuit characteristic; wherein; when the power supply normal power supply of described Intelligent Power Module; described electrostatic protection module 302 presents high resistant characteristic; when the power supply of described Intelligent Power Module is stopped power supply, described electrostatic protection module 302 presents capacitance characteristic.

Fig. 5 shows according to the structural representation of the electrostatic protection module of an embodiment of the present utility model.

As shown in Figure 5, according to the electrostatic protection module 302 of an embodiment of the present utility model, comprise: resistance circuit 302A, in the situation that the power supply normal power supply of described Intelligent Power Module presents high resistant characteristic; Capacitive circuit 302B, presents capacitance characteristic in the situation that the power supply of described Intelligent Power Module is stopped power supply; Commutation circuit 302C, be connected to described condition judgment module 304, described resistance circuit 302A and described capacitive circuit 302B, in the situation that the power supply normal power supply of described Intelligent Power Module, closed described resistance circuit 302A and described arbitrary IGBT pipe be connected, disconnect being connected of described capacitive circuit 302B and described arbitrary IGBT pipe, and in the situation that the power supply of described Intelligent Power Module is stopped power supply, disconnect being connected of described resistance circuit 302A and described arbitrary IGBT pipe, closed described capacitive circuit 302B is connected with described arbitrary IGBT pipe.

For the embodiment shown in Fig. 5, Fig. 6 shows further structural representation.

As shown in Figure 6, as a kind of comparatively specific embodiment, the lower brachium pontis IGBT pipe of take in U phase circuit is example, electrostatic protection module 302 comprises: resistance R (corresponding to resistance circuit 302A in Fig. 5) and capacitor C (corresponding to capacitive circuit 302B in Fig. 5), one end of described resistance R and the positive pole of capacitor C are connected in parallel to the grid of described arbitrary IGBT pipe, and the negative pole of described capacitor C is connected to described arbitrary IGBT and manages corresponding earth terminal UN; Switching device 302A(is corresponding to commutation circuit 302C in Fig. 5), the first end of described switching device 302A is connected to the other end, the 3rd end that described condition judgment module 304, the second end be connected to described resistance R and is connected to described arbitrary IGBT and manages corresponding earth terminal UN; Wherein, described switching device 302A is when the power supply normal power supply of above-mentioned Intelligent Power Module, closed described resistance R and described arbitrary IGBT manage the connection of corresponding earth terminal UN, and when the power supply of described Intelligent Power Module is stopped power supply, disconnect the connection that described resistance R and described arbitrary IGBT manage corresponding earth terminal UN.

In this technical scheme, should the concrete model of resistance R and capacitor C and intrinsic numeric be selected and be arranged, make when switching to resistance R, can present high-impedance state, and when switching to capacitor C, can effectively absorb static.

And for switching device 302A, obviously there are multiple choices, such as relay etc.; And the complexity of building in order to reduce circuit improves switching efficiency, as a kind of specific embodiment, Fig. 7 shows the concrete structure schematic diagram of electrostatic protection module 302 embodiment illustrated in fig. 6.

As shown in Figure 7, specifically can adopt switching tube N(to Figure 7 shows that NMOS pipe), described switching tube N is saturation conduction when the power supply normal power supply of above-mentioned Intelligent Power Module, cut-off when the power supply of described Intelligent Power Module is stopped power supply.

Certainly, it will be understood by those skilled in the art that the mode that electrostatic protection module 302 also can not switched by characteristic, while avoiding IGBT to manage in working order, impact simultaneously, and carry out electrostatic protection under power-down conditions.Such as in a kind of (not shown) comparatively concrete in the situation that; can also between electrostatic protection module 302 and IGBT pipe, a switch be set; when Intelligent Power Module normal power supply; this switch disconnects; avoid the impact of electrostatic protection module 302 on IGBT pipe; when Intelligent Power Module is stopped power supply, this switch is closed, guarantees the electrostatic protection of 304 pairs of IGBT pipes of electrostatic protection module.

As shown in Figure 8, according to the electrostatic protection device of an embodiment of the present utility model, comprise electrostatic protection module 302 and condition judgment module 304.Wherein, it is example that the ESD tolerance shown in Fig. 4 of take promotes circuit Figure 44, and the annexation between each components and parts is as follows:

One termination VCC of resistance 3401, VCC is the first end that ESD tolerance promotes circuit 44.

The source electrode of the drain electrode of one end of the other end connecting resistance 3402 of resistance 3401 and NMOS pipe 3407, PMOS pipe 3405.

The source electrode of the drain electrode of one end of the other end connecting resistance 3403 of resistance 3402 and NMOS pipe 3406, PMOS pipe 3408.

Another termination UN of resistance 3403, UN is the second end that ESD tolerance promotes circuit 44.

The substrate of PMOS pipe 3405 and PMOS pipe 3408 meets VCC.

It is UN that the substrate of NMOS pipe 3406 and NMOS pipe 3407 meets GND().

The drain electrode of the drain electrode of PMOS pipe 3405, PMOS pipe 3408 is, the source electrode of NMOS pipe 3406 is managed 3417 grid, the source electrode of NMOS pipe 3407 is connected and meets NMOS.

One termination VCC of resistance 3409, the drain and gate of another termination NMOS pipe 3410 of resistance 3409, the grid of NMOS pipe 3411, the grid of NMOS pipe 3415, the grid of the grid of NMOS pipe 3421, NMOS pipe 3423.

The substrate of NMOS pipe 3410 is connected with source electrode with the substrate of source electrode, NMOS pipe 3201 with the substrate of source electrode, NMOS pipe 3426 with the substrate of source electrode, NMOS pipe 3421 and the substrate of source electrode, NMOS pipe 3423 with the substrate of source electrode, NMOS pipe 3411 and the substrate of source electrode, NMOS pipe 3415, and meets GND.

The drain electrode of NMOS pipe 3411 is connected with the drain and gate of PMOS pipe 3412, the grid of PMOS pipe 3413.

The substrate of PMOS pipe 3412 is connected with source electrode and meets VCC with the substrate of source electrode, PMOS pipe 3413.

The drain electrode of PMOS pipe 3413 connects the grid of NMOS pipe 3416, the negative electrode of voltage stabilizing didoe 3414, and the anode of voltage stabilizing didoe 3414 meets GND.

The substrate of NMOS pipe 3416 is connected with the drain electrode of source electrode, NMOS pipe 3415 with the substrate of source electrode, NMOS pipe 3417.

The drain electrode of NMOS pipe 3417 and PMOS pipe 3419 grid, the drain electrode of PMOS pipe 3418 be connected with grid.

The substrate of PMOS pipe 3419 is connected with source electrode and meets VCC with the substrate of source electrode, PMOS pipe 3418.

The drain electrode of PMOS pipe 3419 is connected with the grid of PMOS pipe 3420.

The substrate of PMOS pipe 3420 is connected with source electrode and meets VCC.

The drain electrode of PMOS pipe 3420 is connected with the drain electrode of NMOS pipe 3421, the input of not gate 3422.

The grid of the output of not gate 3422 and NMOS pipe 3426, the grid of PMOS pipe 3408, the grid of NMOS pipe 3407, the input of not gate 3404 be connected.

The grid of the output of not gate 3404 and PMOS pipe 3405, NMOS pipe 3406.

The drain electrode of NMOS pipe 3423 is connected with the drain and gate of PMOS pipe 3424, the grid of PMOS pipe 3425.

The substrate of PMOS pipe 3424 is connected with source electrode and meets VCC with the substrate of source electrode, PMOS pipe 3425.

The drain electrode of PMOS pipe 3425 is connected with drain electrode, the input of not gate 3428, one end of electric capacity 3427 of NMOS pipe 3426.

Another termination GND of electric capacity 3427.

The grid of the output termination NMOS pipe 3201 of not gate 3428.

The drain electrode of NMOS pipe 3201 is connected with one end of resistance 3202.

The other end of resistance 3202 is connected with one end of electric capacity 3203 and as ESD tolerance, promotes the 3rd input/output terminal of circuit 44, is designated as OUT.

Another termination GND of electric capacity 3203.

Based on above-mentioned concrete circuit structure, the voltage that in note Fig. 3, A is ordered is UA, and the voltage that B is ordered is UB, and the specific works principle of ESD tolerance lifting circuit 44 comprises:

1, Intelligent Power Module 10(is as shown in Figure 4) normally work

Resistance 3409 forms current source generation currents with NMOS pipe 3410, is mirrored to NMOS pipe 3411, is mirrored to PMOS pipe 3413 manage 3412 by PMOS, thereby makes voltage-stabiliser tube 3414 have electric current to flow through, and the grid formation voltage at NMOS pipe 3416, is designated as VZ; For the voltage-stabiliser tube that uses general BCD technological design to go out, VZ is 6.4V left and right.

Because Intelligent Power Module 10 is normally worked, VCC voltage is 15V, and resistance 3401, resistance 3402 and the suitable resistance of resistance 3403 design, make UA or UB all be greater than VZ; The grid voltage of NMOS pipe 3417 is greater than the grid voltage of NMOS pipe 3416, thereby make the grid of PMOS pipe 3420, is high level, 3420 cut-offs of PMOS pipe, not gate 3422 be input as low level.

Not gate 3422 is output as high level, and not gate 3404 is output as low level, thereby makes PMOS pipe 3405 and NMOS manage 3407 conductings and PMOS pipe 3408 and 3406 cut-offs of NMOS pipe; Now the grid voltage of NMOS pipe 3417 is UA.

Again because not gate 3422 is output as high level, NMOS manages the low level that is input as that 3426 conductings make not gate 3428, not gate 3428 is output as high level, NMOS manages 3201 saturation conductions, be equivalent to another termination of termination GND OUT of resistance 3202, for the suitable resistance value of resistance 3202 design, make OUT be high resistant characteristic to GND.

2, Intelligent Power Module 10 is stopped power supply

When Intelligent Power Module 10 is about to quit work, VCC power-off, its voltage declines gradually, for general BCD technique, even if VCC is down to 5V, resistance 3409 and NMOS pipe 3410 form current sources still can generation current, be located at sometime, VCC is down to 7V, and at this moment, the current mirror that current source produces is to NMOS pipe 3411, be mirrored to PMOS pipe 3413 managing 3412 by PMOS, thereby make voltage-stabiliser tube 3414 have electric current to flow through, design suitable voltage-stabiliser tube 3414, at the grid of NMOS pipe 3416, forming voltage is still VZ.

For resistance 3401, resistance 3402 and the suitable resistance of resistance 3403 design, make UA now just be less than VZ; The grid voltage of NMOS pipe 3417 is less than the grid voltage of NMOS pipe 3416, thereby make the grid of PMOS pipe 3420, is low level, and PMOS manages 3420 conductings, not gate 3422 be input as high level.

Not gate 3422 is output as low level, and not gate 3404 is output as high level, thereby makes PMOS pipe 3405 and 3407 cut-offs of NMOS pipe and PMOS pipe 3408 and NMOS manage 3406 conductings; Now the grid voltage of NMOS pipe 3417 becomes UB from UA, and UB is a voltage less than UA.

Again because not gate 3422 is output as low level, 3426 cut-offs of NMOS pipe make the high level that is input as of not gate 3428, not gate 3428 is output as low level, 3201 cut-offs of NMOS pipe, another termination OUT opens circuit in the one end that is equivalent to resistance 3202, due to the existence of electric capacity 3203, make OUT be capacitance characteristic to GND.

When VCC continues to drop to power-off, NMOS manages 3201 remain off states, therefore, ESD tolerance promotes circuit 44 can keep capacitance characteristic after Intelligent Power Module 10 quits work, be equivalent to after Intelligent Power Module 10 quits work in the grid parallel connection of IGBT pipe 24 electric capacity, for the suitable capacitance of electric capacity 3203 design, can significantly improve the anti-ESD ability of the grid of IGBT pipe 24.

And if the decline of VCC is not because Intelligent Power Module 10 power-off but the voltage fluctuation of power supply, need to wait for that VCC goes back up to makes UB>VZ, ESD tolerance promotes circuit 44 could recover high resistant characteristic.

3, the value of key element

Designing UA and UB, is for fear of in VCC electric voltage exception fluctuation but not during real power-off, the OUT characteristic of GND frequently switches between capacitance characteristic and high resistant characteristic, can consider:

During design VCC=7V, ESD tolerance promotes circuit 44 and becomes capacitance characteristic from high resistant characteristic;

During design VCC=10V, ESD tolerance promotes circuit 44 and becomes high resistant characteristic from capacitance characteristic.

The ratio of the resistance of resistance 3401, resistance 3402 and resistance 3403 is designed to 3:10:23, and be the resistance of same kind, as POLY resistance, when layout drawing, the trend of three pieces of POLY resistance should be identical, to guarantee that the resistance of three pieces of resistance is subject to the impact of process variations identical, thereby guarantee that the resistance ratio of three pieces of resistance is consistent.That is:

UA = \frac{10 + 23}{3 + 10 + 23} \cdot VCC,

UB = \frac{23}{3 + 10 + 23} \cdot VCC,

When VCC=7V, UA ≈ 6.4V; When VCC=10V, UB ≈ 6.4V.

The resistance of resistance 3402 can be taken as 30k Ω, and making total resistance of resistance 3401, resistance 3402 and resistance 3403 is 360k Ω, during VCC=15V, has the electric current of 42 μ A to flow through, and on the impact of the quiescent dissipation of Intelligent Power Module 10, can ignore.

According to different BCD technique, for the suitable resistance of resistance 3409 design, for the suitable breadth length ratio of NMOS pipe 3410 design, time current source current be 10 about μ A, BCD technique at present common 600V, the resistance of resistance 3409 can be designed to 100k Ω, the breadth length ratio of NMOS pipe 3410 is designed to 5 μ m/3 μ m.

It is 3410 consistent that the size of NMOS pipe 3411 and NMOS manage, it is 3412 consistent that the size of PMOS pipe 3413 and PMOS manage, thereby the electric current that makes 10 μ A flows through voltage stabilizing didoe 3414, for general BCD technique, voltage stabilizing didoe is that 100nA～1mA can keep constant voltage at electric current.

The impact of the characteristic of ESD tolerance intensifier circuit 44 being switched in order further to reduce power supply fluctuation, be designed with electric capacity 3427 for reducing the speed of signal transmission, according to the voltage fluctuation situation of power supply, the capacitance of electric capacity 3427 can be designed to 1pF～100pF, when can guarantee that like this ESD tolerance intensifier circuit 44 has rapidly reaction speed, the fluctuation of power supply is had to certain filtration.

More than the resistance of resistance 3202 can be designed to 1M Ω, guarantee that at ESD tolerance intensifier circuit 44, presenting resistance characteristic is, large as far as possible to being loaded into the grid voltage of IGBT pipe 24, as far as possible little on the impact of the switching speed of IGBT pipe 24.

The capacitance of electric capacity 3203 is larger, more obvious to the humidification of ESD tolerance, considers that the ESD tolerance of general consumer electronics product is ± 2000V, and for saving area and cost, the capacitance of electric capacity 3203 can be designed to 22nF or 47nF.

In addition,, except the Intelligent Power Module that Fig. 4, Fig. 5 etc. illustrates, the utility model has also proposed to comprise the Intelligent Power Module (not shown) of the electrostatic protection device described in above-mentioned any one; Meanwhile, the utility model has also proposed to comprise the frequency-conversion domestic electric appliances (not shown) of the Intelligent Power Module described in above-mentioned any one.

More than be described with reference to the accompanying drawings the technical solution of the utility model; consider in correlation technique; Intelligent Power Module is easily subject to the impact of electrostatic impact; therefore; the utility model proposes a kind of electrostatic protection device, a kind of Intelligent Power Module and a kind of frequency-conversion domestic electric appliances, can, the in the situation that of Intelligent Power Module power down, avoid the high-pressure electrostatic of earth terminal to cause the destruction to IGBT pipe; guarantee the safety in utilization of Intelligent Power Module, extend its useful life.

The foregoing is only preferred embodiment of the present utility model, be not limited to the utility model, for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.

Claims

1. an electrostatic protection device, is characterized in that, comprising:

Condition judgment module, is connected to Intelligent Power Module, in the situation that the power supply of the described Intelligent Power Module of judgement is stopped power supply, generates and controls the electrostatic protection instruction of carrying out electrostatic protection; And

Electrostatic protection module, is connected to described condition judgment module, and receives described electrostatic protection instruction, carries out described electrostatic protection, and is connected to the arbitrary IGBT pipe in Intelligent Power Module, and described arbitrary IGBT pipe is carried out to electrostatic protection,

Described electrostatic protection module comprises:

Resistance circuit, in the situation that the power supply normal power supply of described Intelligent Power Module presents high resistant characteristic;

Capacitive circuit, presents capacitance characteristic in the situation that the power supply of described Intelligent Power Module is stopped power supply; And

Commutation circuit, be connected to described condition judgment module, described resistance circuit and described capacitive circuit, in the situation that the power supply normal power supply of described Intelligent Power Module, closed described resistance circuit and described arbitrary IGBT pipe be connected, disconnect being connected of described capacitive circuit and described arbitrary IGBT pipe, and in the situation that the power supply of described Intelligent Power Module stop power supply, disconnect being connected of described resistance circuit and described arbitrary IGBT pipe, closed described capacitive circuit is connected with described arbitrary IGBT pipe

Wherein, described resistance circuit comprises resistance, and one end of described resistance is connected to the grid of described arbitrary IGBT pipe;

Described capacitive circuit comprises electric capacity, and the positive pole of described electric capacity is connected to the grid of described arbitrary IGBT pipe, and the negative pole of described electric capacity is connected to described arbitrary IGBT and manages corresponding earth terminal;

Described commutation circuit comprises switching device, and the first end of described switching device is connected to the other end, the 3rd end that described condition judgment module, the second end be connected to described resistance and is connected to described arbitrary IGBT and manages corresponding earth terminal;

Described switching device is in the situation that the power supply normal power supply of above-mentioned Intelligent Power Module, closed described resistance and described arbitrary IGBT manage the connection of corresponding earth terminal, and in the situation that the power supply of described Intelligent Power Module is stopped power supply, disconnect the connection that described resistance and described arbitrary IGBT manage corresponding earth terminal.

2. electrostatic protection device according to claim 1, is characterized in that, described condition judgment module comprises:

First end, is connected to described arbitrary IGBT and manages corresponding feeder ear, detects the supply power voltage corresponding to described arbitrary IGBT pipe;

The second end, is connected to described arbitrary IGBT and manages corresponding earth terminal, detects the earthed voltage corresponding to described arbitrary IGBT pipe;

Voltage comparator circuit, is connected to described first end and described the second end, according to the comparative result of the voltage difference of described supply power voltage and described earthed voltage and predeterminated voltage value, judges described Power supply state.

3. electrostatic protection device according to claim 2; it is characterized in that; when upper brachium pontis that described arbitrary IGBT pipe is arbitrary phase; described first end is connected to the power supply anode of the high-pressure area of described arbitrary phase, and described the second end connects the power supply negative terminal of the high-pressure area of most described arbitrary phase.

4. electrostatic protection device according to claim 2; it is characterized in that; when lower brachium pontis that described arbitrary IGBT pipe is described arbitrary phase; described first end is connected to the power supply anode of the area of low pressure of described Intelligent Power Module, and described the second end is connected to the power supply negative terminal of the area of low pressure of described Intelligent Power Module.

5. electrostatic protection device according to claim 1, is characterized in that, described switching device comprises:

Switching tube, described switching tube is saturation conduction when the power supply normal power supply of above-mentioned Intelligent Power Module, cut-off when the power supply of described Intelligent Power Module is stopped power supply.

6. an Intelligent Power Module, is characterized in that, comprises at least one electrostatic protection device as described in any one in claim 1-5.

7. a frequency-conversion domestic electric appliances, is characterized in that, comprises Intelligent Power Module as claimed in claim 6.