CN201194374Y - DC three level converter - Google Patents
DC three level converter Download PDFInfo
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- CN201194374Y CN201194374Y CNU200820092802XU CN200820092802U CN201194374Y CN 201194374 Y CN201194374 Y CN 201194374Y CN U200820092802X U CNU200820092802X U CN U200820092802XU CN 200820092802 U CN200820092802 U CN 200820092802U CN 201194374 Y CN201194374 Y CN 201194374Y
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Abstract
The utility model relates to a DC three-level converter, comprising a switch circuit in which at least one bridge arm applies an IGBT transistor and a MOS transistor to connect in shunt, MOS transistor drive switches on prior to the IGBT but switches off subsequent to the IGBT. The DC three-level converter uses the MOS transistor drive to switch on prior to the IGBT, or switch off subsequent to the IGBT, after connected in shunt with the MOS transistor based on the simplest usage of the IGBT, the IGBT essentially switches on during the switch-on of the switch. Such a combination integrates the advantages about low loss of switch-on or switch-off of the MOS transistor and about low loss of switch-on of the IGBT, and also avoids the defects about high loss of switch-on or switch-off of the IGBT and about high loss of switch-on of the MOS transistor, the cost is in the middle level or even lower.
Description
Technical field
The utility model relates to converter, more particularly, relates to a kind of direct current three-level converter.
Background technology
Direct current three-level converter technology more and more widely, particularly at powerful inverter, UPS, frequency converter etc., switching frequency and loss become a pair of contradiction, the low-loss of IGBT conduction voltage drop is low, but the higher high frequency occasion that is not suitable for of switching loss, metal-oxide-semiconductor opens that turn-off power loss is low to be fit to high frequency, but conduction loss than the IGBT height, and price is relatively costly.And each brachium pontis of switching circuit of the prior art all is a simple class power tube MOS or an IGBT, perhaps the simple connection in series-parallel combination of similar power tube.
The utility model content
The technical problems to be solved in the utility model is, at the above-mentioned defective of prior art, provides a kind of direct current three-level converter.
The technical scheme that its technical problem that solves the utility model adopts is: construct a kind of direct current three-level converter, comprise switching circuit, at least one brachium pontis in the described switching circuit uses IGBT pipe and metal-oxide-semiconductor to be in parallel, and described metal-oxide-semiconductor drives prior to described IGBT conducting and back and turn-offs in described IGBT.
In direct current three-level converter described in the utility model, described switching circuit comprises: metal-oxide-semiconductor Q1, Q2, Q3 and Q4, and IGBT pipe VT1, VT2;
Wherein, the collector electrode of IGBT pipe VT1 and the drain electrode of metal-oxide-semiconductor Q2 are connected and are connected to the drain electrode that the source electrode of metal-oxide-semiconductor Q1, emitter that IGBT manages VT1 are connected to the source electrode connection of metal-oxide-semiconductor Q2 and are connected to metal-oxide-semiconductor Q3;
The emitter that the collector electrode of IGBT pipe VT2 is connected with the drain electrode of metal-oxide-semiconductor Q3, IGBT manages VT2 and the source electrode of metal-oxide-semiconductor Q3 are connected and are connected to the drain electrode of metal-oxide-semiconductor Q4.
In direct current three-level converter described in the utility model, described switching circuit comprises: metal-oxide-semiconductor Q1, Q2, Q3 and Q4, and IGBT pipe VT1, VT2;
Wherein, the emitter that the collector electrode of IGBT pipe VT1 is connected with the drain electrode of metal-oxide-semiconductor Q1, IGBT manages VT1 is connected to the source electrode of metal-oxide-semiconductor Q1 and is connected to the drain electrode of metal-oxide-semiconductor Q2;
The source electrode of metal-oxide-semiconductor Q2 is connected with the drain electrode of metal-oxide-semiconductor Q3;
The collector electrode of IGBT pipe VT2 is connected and is connected to the source electrode of metal-oxide-semiconductor Q3 with the drain electrode of metal-oxide-semiconductor Q4, the emitter of IGBT pipe VT2 is connected with the source electrode of metal-oxide-semiconductor Q4.
Preferably, described metal-oxide-semiconductor is a N channel enhancement metal-oxide-semiconductor, and described IGBT is N raceway groove IGBT.
In direct current three-level converter described in the utility model, also comprise protective circuit, the input of described protective circuit is connected to the output of described switching circuit.
Preferably, described protective circuit comprises diode D1, D2, D3 or D4;
Wherein, the negative electrode of diode D1 and anode are connected respectively to drain electrode and the source electrode of metal-oxide-semiconductor Q1;
The negative electrode of diode D2 and anode are connected respectively to drain electrode and the source electrode of metal-oxide-semiconductor Q2;
The negative electrode of diode D3 and anode are connected respectively to drain electrode and the source electrode of metal-oxide-semiconductor Q3;
The negative electrode of diode D4 and anode are connected to drain electrode and the source electrode of metal-oxide-semiconductor Q4.
In direct current three-level converter described in the utility model, described switching circuit also comprises diode D5 and D6;
Wherein, the negative electrode of diode D5 is connected to the drain electrode of metal-oxide-semiconductor Q2, and the anode of diode D5 is connected to the negative electrode of diode D6, and the anode of diode D6 is connected to the source electrode of metal-oxide-semiconductor Q3
Implement direct current three-level converter of the present utility model, have following beneficial effect:, adopt metal-oxide-semiconductor to drive prior to IGBT conducting or back and turn-off in IGBT with after metal-oxide-semiconductor is in parallel based on the simplest use IGBT, IGBT is mainly open-minded during switch conduction.Both advantages that this combination of sets metal-oxide-semiconductor is opened or turn-off power loss is low, the IGBT conduction loss is low are but avoided IGBT and are opened turn-off power loss height, shortcoming that the metal-oxide-semiconductor conduction loss is high, and it is compromise or lower that cost occupy.
Description of drawings
The utility model is described in further detail below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is the theory diagram of the utility model direct current three-level converter one embodiment;
Fig. 2 is the circuit theory diagrams of direct current three-level converter shown in Figure 1;
Fig. 3 is the circuit theory diagrams of direct current three-level converter shown in Figure 1.
Embodiment
As shown in Figure 1, in an embodiment of direct current three-level converter of the present utility model, comprise DC input voitage 1, bleeder circuit 2, translation circuit 3 and current rectifying and wave filtering circuit 4, DC input voitage 1 is connected in the input that bleeder circuit 2 its outputs of back are connected in translation circuit 3, and the output of translation circuit 3 is connected to current rectifying and wave filtering circuit 4 then; Wherein, DC input voitage 1 is formed by a plurality of battery combination, and bleeder circuit is made up of a plurality of dividing potential drop capacitances in series, for example can be that two dividing potential drop capacitor C 1 and C2 (C1=C2) are composed in series; Translation circuit 3 comprises switching circuit 31, protective circuit 32 and transformer; wherein protective circuit 32 is made up of a plurality of protection diodes; and provide protection for the power tube in the switching circuit 31 one by one; in addition; switching circuit 31 is made up of the metal-oxide-semiconductor of a plurality of series connection; and use the IGBT pipe to be in parallel on one or more brachium pontis therein with metal-oxide-semiconductor; both advantages that this combination of sets metal-oxide-semiconductor is opened or turn-off power loss is low, the IGBT conduction loss is low; but avoid IGBT and open turn-off power loss height, shortcoming that the metal-oxide-semiconductor conduction loss is high, it is compromise or lower that cost occupy.For this compound mode,, just can reach efficient and the good effect of high frequency as long as the model of using matches.In actual use, metal-oxide-semiconductor can be selected N channel enhancement metal-oxide-semiconductor or P-channel enhancement type metal-oxide-semiconductor for use, and IGBT can select N raceway groove IGBT or P raceway groove IGBT for use.For current rectifying and wave filtering circuit 4, wherein rectifier diode D7 and D8 form rectification circuit, and filter inductance L and filter capacitor C3 form filter circuit.
In the physical circuit as shown in Figure 2, switching circuit 31 comprises: metal-oxide-semiconductor Q1, Q2, Q3 and Q4, and IGBT pipe VT1, VT2; Wherein, the collector electrode of IGBT pipe VT1 and the drain electrode of metal-oxide-semiconductor Q2 are connected and are connected to the drain electrode that the source electrode of metal-oxide-semiconductor Q1, emitter that IGBT manages VT1 are connected to the source electrode connection of metal-oxide-semiconductor Q2 and are connected to metal-oxide-semiconductor Q3; The emitter that the collector electrode of IGBT pipe VT2 is connected with the drain electrode of metal-oxide-semiconductor Q3, IGBT manages VT2 and the source electrode of metal-oxide-semiconductor Q3 are connected and are connected to the drain electrode of metal-oxide-semiconductor Q4.The grid of each power tube is connected to control circuit.
In another physical circuit as shown in Figure 3, switching circuit 31 comprises: metal-oxide-semiconductor Q1, Q2, Q3 and Q4, and IGBT pipe VT1, VT2; Wherein, the emitter that the collector electrode of IGBT pipe VT1 is connected with the drain electrode of metal-oxide-semiconductor Q1, IGBT manages VT1 is connected to the source electrode of metal-oxide-semiconductor Q1 and is connected to the drain electrode of metal-oxide-semiconductor Q2; The source electrode of metal-oxide-semiconductor Q2 is connected with the drain electrode of metal-oxide-semiconductor Q3; The collector electrode of IGBT pipe VT2 is connected and is connected to the source electrode of metal-oxide-semiconductor Q3 with the drain electrode of metal-oxide-semiconductor Q4, the emitter of IGBT pipe VT2 is connected with the source electrode of metal-oxide-semiconductor Q4.The grid of each power tube is connected to control circuit.
The output of switching circuit as described in the input of protective circuit 32 is connected to shown in Fig. 2,3.Preferably, protective circuit 32 comprises diode D1, D2, D3 or D4; Wherein, the negative electrode of diode D1 is connected to the drain electrode of metal-oxide-semiconductor Q1, and the anode of diode D1 is connected to the source electrode of metal-oxide-semiconductor Q1; The negative electrode of diode D2 is connected to the drain electrode of metal-oxide-semiconductor Q2, and the anode of diode D2 is connected to the source electrode of metal-oxide-semiconductor Q2; The negative electrode of diode D3 is connected to the drain electrode of metal-oxide-semiconductor Q3, and the anode of diode D3 is connected to the source electrode of metal-oxide-semiconductor Q3; The negative electrode of diode D4 is connected to the drain electrode of metal-oxide-semiconductor Q4, and the anode of diode D4 is connected to the source electrode of metal-oxide-semiconductor Q4.
In addition, switching circuit 31 also comprises diode D5 and D6; Wherein, the negative electrode of diode D5 is connected to the drain electrode of metal-oxide-semiconductor Q2, and the anode of diode D5 is connected to the negative electrode of diode D6, and the anode of diode D6 is connected to the source electrode of metal-oxide-semiconductor Q3.
The utility model describes by several specific embodiments, it will be appreciated by those skilled in the art that, under the situation that does not break away from the utility model scope, can also carry out various conversion and be equal to alternative the utility model.In addition, at particular condition or concrete condition, can make various modifications to the utility model, and not break away from scope of the present utility model.Therefore, the utility model is not limited to disclosed specific embodiment, and should comprise the whole execution modes that fall in the utility model claim scope.
Claims (7)
1. a direct current three-level converter comprises switching circuit, it is characterized in that, at least one brachium pontis in the described switching circuit uses IGBT pipe and metal-oxide-semiconductor to be in parallel, and described metal-oxide-semiconductor drives prior to described IGBT conducting and back and turn-offs in described IGBT.
2. direct current three-level converter according to claim 1 is characterized in that, described switching circuit comprises: metal-oxide-semiconductor Q1, Q2, Q3 and Q4, and IGBT pipe VT1, VT2;
Wherein, the collector electrode of IGBT pipe VT1 and the drain electrode of metal-oxide-semiconductor Q2 are connected and are connected to the drain electrode that the source electrode of metal-oxide-semiconductor Q1, emitter that IGBT manages VT1 are connected to the source electrode connection of metal-oxide-semiconductor Q2 and are connected to metal-oxide-semiconductor Q3;
The emitter that the collector electrode of IGBT pipe VT2 is connected with the drain electrode of metal-oxide-semiconductor Q3, IGBT manages VT2 and the source electrode of metal-oxide-semiconductor Q3 are connected and are connected to the drain electrode of metal-oxide-semiconductor Q4.
3. direct current three-level converter according to claim 1 is characterized in that, described switching circuit comprises: metal-oxide-semiconductor Q1, Q2, Q3 and Q4, and IGBT pipe VT1, VT2;
Wherein, the emitter that the collector electrode of IGBT pipe VT1 is connected with the drain electrode of metal-oxide-semiconductor Q1, IGBT manages VT1 is connected to the source electrode of metal-oxide-semiconductor Q1 and is connected to the drain electrode of metal-oxide-semiconductor Q2;
The source electrode of metal-oxide-semiconductor Q2 is connected with the drain electrode of metal-oxide-semiconductor Q3;
The collector electrode of IGBT pipe VT2 is connected and is connected to the source electrode of metal-oxide-semiconductor Q3 with the drain electrode of metal-oxide-semiconductor Q4, the emitter of IGBT pipe VT2 is connected with the source electrode of metal-oxide-semiconductor Q4.
4. according to the arbitrary described direct current three-level converter of claim 1 to 3, it is characterized in that described metal-oxide-semiconductor is a N channel enhancement metal-oxide-semiconductor, described IGBT is N raceway groove IGBT.
5. according to claim 2 or 3 described direct current three-level converters, it is characterized in that also comprise protective circuit, the input of described protective circuit is connected to the output of described switching circuit.
6. direct current three-level converter according to claim 5 is characterized in that described protective circuit comprises diode D1, D2, D3 or D4;
Wherein, the negative electrode of diode D1 and anode are connected respectively to drain electrode and the source electrode of metal-oxide-semiconductor Q1;
The negative electrode of diode D2 and anode are connected respectively to drain electrode and the source electrode of metal-oxide-semiconductor Q2;
The negative electrode of diode D3 and anode are connected respectively to drain electrode and the source electrode of metal-oxide-semiconductor Q3;
The negative electrode of diode D4 and anode are connected to drain electrode and the source electrode of metal-oxide-semiconductor Q4.
7. direct current three-level converter according to claim 6 is characterized in that described switching circuit also comprises diode D5 and D6;
Wherein, the negative electrode of diode D5 is connected to the drain electrode of metal-oxide-semiconductor Q2, and the anode of diode D5 is connected to the negative electrode of diode D6, and the anode of diode D6 is connected to the source electrode of metal-oxide-semiconductor Q3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820092802XU CN201194374Y (en) | 2008-03-18 | 2008-03-18 | DC three level converter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU200820092802XU CN201194374Y (en) | 2008-03-18 | 2008-03-18 | DC three level converter |
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| Publication Number | Publication Date |
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| CN201194374Y true CN201194374Y (en) | 2009-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNU200820092802XU Expired - Fee Related CN201194374Y (en) | 2008-03-18 | 2008-03-18 | DC three level converter |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103166615A (en) * | 2011-12-14 | 2013-06-19 | 三菱电机株式会社 | Power semiconductor device |
| CN103795248A (en) * | 2014-01-26 | 2014-05-14 | 广东美的制冷设备有限公司 | Power consumption control circuit, intelligent power module and frequency variable household appliance |
| CN113517815A (en) * | 2021-09-14 | 2021-10-19 | 浙江日风电气股份有限公司 | Three-level bidirectional direct current converter and control system and control method thereof |
-
2008
- 2008-03-18 CN CNU200820092802XU patent/CN201194374Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103166615A (en) * | 2011-12-14 | 2013-06-19 | 三菱电机株式会社 | Power semiconductor device |
| US9106156B2 (en) | 2011-12-14 | 2015-08-11 | Mitsubishi Electric Corporation | Power semiconductor device |
| CN103166615B (en) * | 2011-12-14 | 2016-06-29 | 三菱电机株式会社 | Power semiconductor arrangement |
| CN103795248A (en) * | 2014-01-26 | 2014-05-14 | 广东美的制冷设备有限公司 | Power consumption control circuit, intelligent power module and frequency variable household appliance |
| CN103795248B (en) * | 2014-01-26 | 2016-08-10 | 广东美的制冷设备有限公司 | Power control circuit and SPM, frequency-conversion domestic electric appliances |
| CN113517815A (en) * | 2021-09-14 | 2021-10-19 | 浙江日风电气股份有限公司 | Three-level bidirectional direct current converter and control system and control method thereof |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090211 Termination date: 20150318 |
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| EXPY | Termination of patent right or utility model |