CN103618449A - Three-winding coupling inductance double tube boost converter with charge pump - Google Patents
Three-winding coupling inductance double tube boost converter with charge pump Download PDFInfo
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Abstract
The invention relates to a three-winding coupling inductance double tube boost converter with a charge pump. The three-winding coupling inductance double tube boost converter with the charge pump comprises a direct-current power source, a first boosting circuit, a second boosting circuit, a first charge pump boosting unit, a first clamping circuit, a second clamping circuit, a first switch circuit and a load, wherein an output voltage of the direct-current power source is output through two paths, one path of the output voltage is input into the first charge pump boosting unit after undergoing primary boosting of the first boosting circuit and input to one end of the load through the first switch circuit after undergoing secondary boosting of the first charge pump boosting unit, and the other path of the output voltage is input to the other end of the load after undergoing primary boosting of the second boosting unit, an output filtering capacitor is further connected to the two ends of the load in parallel with the load, the first clamping circuit comprises a first clamping capacitor and a first clamping diode, and the second clamping circuit comprises a second clamping capacitor and a second clamping diode. The active network boost converter is small in size and high in conversion efficiency, voltage stress and current stress of a main switch tube are small, the diodes are switched off naturally with zero current, and the reverse recovery problem does not exist.
Description
Technical field
The present invention relates to the two-tube booster converter of three winding coupled inductance with charge pump, belong to converters field.
Background technology
Be subject to the dual-pressure of energy shortage and environmental problem, generation of electricity by new energy is subject to extensive concern and research because of its spatter property, for monolithic photovoltaic cell, fuel cell are connected to the grid, need to use high-gain, high efficiency DC converter significantly to promote direct voltage grade.Traditional B oost converter boost ability is very limited, and along with the rising of gain, duty ratio becomes greatly gradually, and it is large that inductive current ripple becomes, and it is large that the inductance needing also becomes thereupon; And while being applied in high output voltage occasion, power switch pipe voltage stress, current stress is larger, and switching tube conduction loss is large; Outlet side diode electrically compression is large, and diode turn-offs firmly, and reverse-recovery problems and EMI problem are very serious, and conversion efficiency is lower.
Summary of the invention
Technical problem to be solved by this invention is the deficiency for above-mentioned background technology, the two-tube booster converter of three winding coupled inductance with charge pump is provided, described switched inductors active network booster converter volume is little but conversion efficiency is high, and master power switch tube voltage stress, current stress is little; Power diode all can be realized zero current and naturally turn-off, and does not have reverse-recovery problems, and EMI disturbs less.
The present invention adopts following technical scheme for achieving the above object:
The two-tube booster converter of three winding coupled inductance with charge pump, is characterized in that: comprise DC power supply, the first booster circuit, the second booster circuit, the first charge pump boosting unit, the first clamping circuit, the second clamping circuit, the first switching circuit and load, the voltage of described DC power supply output is divided into two-way output, and wherein the first charge pump boosting unit is inputted on a road after the first booster circuit tentatively boosts, and through the first charge pump boosting unit secondary booster, inputs to one end of load by the first switching circuit, another road inputs to the load other end after the second booster circuit tentatively boosts, an output filter capacitor in parallel also at the two ends of load, described the first booster circuit comprises the first inductance and the first switching tube, and described the second booster circuit comprises the second inductance and second switch pipe, described the first clamping circuit comprises the first clamping capacitance and the first clamping diode, described the second clamping circuit comprises the second clamping capacitance and the second clamping diode, one end of the first inductance, one end of the drain electrode of second switch pipe and the first clamping capacitance is connected to respectively direct voltage source positive pole, one end of the second inductance, one end of the source electrode of the first switching tube and the second clamping capacitance is connected to respectively direct voltage source negative pole, the other end of the first clamping capacitance is connected with the negative electrode of the first clamping diode, the other end of the first inductance, the anode of the first clamping diode is connected with the drain electrode of the first switching tube respectively, the other end of the second clamping capacitance is connected with the anode of the second clamping diode and the other end of load respectively, and the negative electrode of the other end of the second inductance and the second clamping diode is connected with the source electrode of second switch pipe respectively.
As further prioritization scheme of the present invention, the first described charge pump boosting unit comprises the 3rd inductance, the first charge pump diode and the first charge pump electric capacity, described the first switching circuit is diode, wherein, the other end of the first clamping capacitance is connected to the anode of the first charge pump diode, the negative electrode of the first charge pump diode is connected with the anode of diode and one end of the first charge pump electric capacity respectively, the negative electrode of diode is connected to one end of load, the other end of the first charge pump electric capacity is connected with one end of the 3rd inductance, the other end of the 3rd inductance is connected with input side DC source is anodal, described the first inductance, the second inductance and the 3rd inductance form coupling inductance, the wherein anodal one end being connected of the first inductance and input side DC source, the 3rd inductance and the anodal one end being connected of input side DC source, and one end of being connected with the source electrode of second switch pipe of the second inductance Same Name of Ends that is coupling inductance.
As further prioritization scheme of the present invention, the first described charge pump boosting unit comprises the 3rd inductance, the first charge pump diode and the first charge pump electric capacity, described the first switching circuit is diode, wherein, the negative electrode of the first charge pump diode is connected with the anode of diode and one end of the first charge pump electric capacity respectively, the negative electrode of diode is connected to one end of load, the other end of the first charge pump electric capacity is connected with one end of the 3rd inductance, and the other end of the 3rd inductance is connected with the negative electrode of the first clamping diode, the anode of the first charge pump diode respectively; Described the first inductance, the second inductance and the 3rd inductance form coupling inductance, the wherein anodal one end being connected of the first inductance and input side DC source, one end that the 3rd inductance is connected with the negative electrode of the first clamping diode, and one end of being connected with the source electrode of second switch pipe of the second inductance Same Name of Ends that is coupling inductance.
As further prioritization scheme of the present invention, first, second switching tube is metal-oxide-semiconductor or IGBT pipe.
The present invention adopts technique scheme, has following beneficial effect: converter volume is little but conversion efficiency is high, and master power switch tube voltage stress, current stress are low, and power diode voltage stress is low, and can realize zero current and naturally turn-off.
Accompanying drawing explanation
Fig. 1 is that the present invention is with the two-tube boost converter circuit schematic diagram of three winding coupled inductance of charge pump;
Fig. 2 is that the second embodiment of the present invention is with the two-tube boost converter circuit schematic diagram of three winding coupled inductance of charge pump;
Fig. 3 is the first power switch pipe voltage oscillogram;
Fig. 4 is the second power switch pipe voltage oscillogram;
Fig. 5 to Fig. 7 is the first inductance, the second inductance and the 3rd inductive current oscillogram;
Fig. 8 is the first power switch pipe current waveform figure;
Fig. 9 is the first power switch pipe current waveform figure;
Figure 10 is the first clamping diode voltage oscillogram;
Figure 11 is the first clamp diode current oscillogram;
Figure 12 is the second clamping diode voltage oscillogram;
Figure 13 is the second clamp diode current oscillogram;
Figure 14 is the first charge pump diode voltage oscillogram;
Figure 15 is the first charge pump diode current oscillogram;
Figure 16 is outlet side diode voltage oscillogram;
Figure 17 is outlet side diode current oscillogram;
Figure 18 is output filter capacitor voltage oscillogram.
Figure 19 is the two-tube boost converter circuit schematic diagram of three winding coupled inductance with charge pump of prior art;
Figure 20 (a) to Figure 20 (n) be the two-tube booster converter groundwork of the three winding coupled inductance oscillogram with charge pump;
Figure 21 (a) to Figure 21 (f) be the equivalent circuit diagram with the two-tube booster converter of three winding coupled inductance of charge pump.
Number in the figure explanation: V
ifor direct voltage source; N
1be the first inductance, N
2be the second inductance, S
1, S
2for first, second switching tube, D
1, D
2for first, second clamping diode, C
1, C
2for first, second clamping capacitance, N
3be the 3rd inductance, D
3be the first charge pump diode, C
3be the first charge pump electric capacity, D
4be the first switching circuit, C
ofor output filter capacitor, R
lfor load.
Embodiment
Below in conjunction with accompanying drawing, the technical scheme of invention is elaborated:
The two-tube booster converter of three winding coupled inductance with charge pump as shown in Figure 1, comprise DC power supply, the first booster circuit and the second booster circuit, described the first booster circuit and the second booster circuit form the two-tube structure of boosting, and also comprise the first charge pump boosting unit, the first clamping circuit, the second clamping circuit, the first switching circuit and load; The voltage of described DC power supply output is divided into two-way output, and wherein the first charge pump boosting unit is inputted on a road after the first booster circuit tentatively boosts, and through the first charge pump boosting unit secondary booster, inputs to one end of load by the first switching circuit; Another road inputs to the load other end after the second booster circuit tentatively boosts, an output filter capacitor in parallel also at the two ends of load;
The two-tube structure of boosting comprises: direct voltage source Vi, the first inductance N1, the second inductance N2, the first switching tube S1 and second switch pipe S2, and described the first switching tube is the first power switch pipe, second switch pipe is the second power switch pipe; Wherein: one end of the drain electrode of the second power switch pipe, the first inductance N1 is connected with direct voltage source Vi is anodal respectively, the other end of the first inductance N1 is connected with the drain electrode of the first power switch pipe, one end of the source electrode of the first power switch pipe, the second inductance N2 is connected with direct voltage source Vi negative pole respectively, and the other end of the second inductance N2 is connected with the source electrode of the second power switch pipe.
The first clamping circuit comprises: the first clamping capacitance C1 and second switch circuit, and described second switch circuit is the first clamping diode D1; Wherein the anode of the first clamping diode D1 is connected with the drain electrode of the first power switch tube S 1, the other end of the first inductance N1, one end of the first clamping capacitance C1 is connected with one end of the anode of input side DC source Vi, the drain electrode of the second power switch tube S 1 and the first inductance N1, and the other end of the first clamping capacitance C1 is connected with the negative electrode of the first clamping diode D1.
The second clamping circuit comprises: the second clamping capacitance C2 and the 3rd switching circuit, and the 3rd described switching circuit is the second clamping diode D2; Wherein the negative electrode of the second clamping diode D2 is connected with the source electrode of the second power switch tube S 2, the other end of the second inductance N2, one end of the second clamping capacitance C2 is connected with one end of the negative electrode of input side DC source Vi, the source electrode of the first power switch tube S 1 and the second inductance N2, and the other end of the second clamping capacitance C2 is connected with the anode of the second clamping diode D2.
The first charge pump boosting unit comprises: the first charge pump capacitor C 3, the first charge pump diode D3 and the 3rd inductance N3; The first switching circuit is diode, wherein the first anode of charge pump diode D3, the negative electrode of the first clamping diode D1 be connected with the other end of the first clamp circuit C1, the negative electrode of the first charge pump diode D3 is connected to respectively the anode of diode and one end of the first charge pump capacitor C 3, the negative electrode of diode is connected to one end of load, and one end of the 3rd inductance is connected to respectively one end of the first clamping capacitance C1, drain electrode and the positive source of one end of the first inductance N1, second switch pipe S2.The other end of the first charge pump electric capacity is connected to the other end of the 3rd inductance.As shown in Figure 1, the 3rd inductance N3, the first clamping capacitance C1, the first charge pump diode D3, the first charge pump capacitor C 3 are connected mutually, form a closed-loop path.
The first inductance N1 in circuit, the second inductance N2, the 3rd inductance N3 intercouple becomes three winding coupled inductance, and one end that one end that one end that wherein the first inductance N1 is connected with input side DC source Vi anode, the second inductance N2 are connected with the second power switch tube S 2 source electrodes and the 3rd inductance N3 are connected with input side DC source Vi anode is three Same Name of Ends of three winding coupled inductance.
Filter capacitor Co is the output of converter, load R
lbe attempted by the output of converter.The output of the first charge pump boosting unit is connected to one end of filter capacitor Co through the first switching circuit, described the first open circuit is diode.
Embodiment bis-: as shown in Figure 2, another specific embodiment of the present invention, be with embodiment mono-difference: the first described charge pump boosting unit comprises the 3rd inductance, the first charge pump diode and the first charge pump electric capacity, described the first switching circuit is diode, wherein, the negative electrode of the first charge pump diode is connected with the anode of diode and one end of the first charge pump electric capacity respectively, the negative electrode of diode is connected to one end of load, the other end of the first charge pump electric capacity is connected with one end of the 3rd inductance, the other end of the 3rd inductance respectively with the negative electrode of the first clamping diode, the anode of the other end of the first clamping capacitance and the first charge pump diode is connected, described the first inductance, the second inductance and the 3rd inductance form coupling inductance, the wherein anodal one end being connected of the first inductance and input side DC source, one end that the 3rd inductance is connected with the negative electrode of the first clamping diode, and one end of being connected with the source electrode of second switch pipe of the second inductance Same Name of Ends that is coupling inductance.
Fig. 3 to Figure 18 is input voltage V
i=40V, power switch tube S
1, S
2duty ratio D=0.5, three winding coupled inductance turn ratio 1:1:3, oscillogram during load R=320 Ω, wherein, Fig. 3 and Fig. 4 are respectively first, second power switch tube voltage V
s1, V
s2corresponding oscillogram, Fig. 5 to Fig. 7 is respectively the corresponding oscillogram of the first inductive current iL1, the corresponding oscillogram of the second inductive current iL2 and the 3rd inductive current iL3 to oscillogram just, Fig. 8 and Fig. 9 are respectively the corresponding oscillograms of the first power switch pipe current i s1, the corresponding oscillogram of the second power switch pipe current i s2, Figure 10 and Figure 11 are respectively the first corresponding oscillogram of clamping diode voltage VD1 and the corresponding oscillogram of current i D1, Figure 12 and Figure 13 are respectively the second corresponding oscillogram of clamping diode voltage VD2 and the corresponding oscillogram of current i D2, Figure 14 and Figure 15 are respectively that the corresponding waveform of the first corresponding oscillogram of charge pump diode voltage VD3 and current i D3 reveals, Figure 16 and Figure 17 are i.e. the first corresponding oscillogram of switching circuit voltage VD4 and the corresponding oscillograms of current i D4 of outlet side diode, Figure 18 is the corresponding waveform of output filter capacitor voltage VC.
Voltage V when power switch pipe turn-offs as we can see from the figure
s1=V
s2=80V, illustrates that power switch pipe voltage stress is little.The first power switch pipe current i
s1, the second power switch pipe current i
s2less, visible power switch tube current is less, and conduction loss is little.Diode current is all that current over-zero turn-offs, and illustrates and has effectively solved diode reverse recovery and EMI interference problem.
Change winding N
3the position of one end tie point, can obtain as shown in Figure 2, the another kind of two-tube booster converter of three winding coupled inductance with charge pump, two kinds of circuit are at voltage gain, power switch tube voltage, current stress, power diode voltage stress, the parameters such as on-state average current are in full accord, only difference to some extent on the voltage of charge pump electric capacity.
Converter topology is analyzed
As shown in figure 19, be the topological diagram of prior art, corresponding with Figure 19 is as shown in Figure 1, is the two-tube booster converter of three winding coupled inductance ZVS/ZCS of the present invention's proposition.Wherein switching tube S1, S2 synchronous working, capacitor C 1, C2 is clamping capacitance, for the energy of absorbing coupling inductance leakage inductance, with clamp switch tube voltage, C3 is charge pump electric capacity, in order to the voltage gain of Lifting Transform device; N1, N2, N3 are three windings that intercouple.If the turn ratio of L1, L2, L3 is 1:1:n; Due to the double pipe structure full symmetric in Fig. 1 dotted line frame, process for simplifying the analysis, supposes that switching tube S1, S2 switching speed are in full accord; Clamping capacitance is enough large, and making capacitor C 1, C2 both end voltage is a constant, and in double pipe structure, the device operating state of correspondence is identical mutually.Figure 20 (a) is depicted as converter groundwork waveform to Figure 20 (n), and wherein Figure 20 (a) is the gate drive voltage oscillogram of the first switching tube and second switch pipe, and Figure 20 (b) is the exciting curent i of three winding coupled inductance
moscillogram, Figure 20 (c) is the oscillogram of equivalent electric circuit equivalence leakage inductance Lk, Figure 20 (d) is that the first inductance and the current i n1 of the second inductance are, the oscillogram of in2, Figure 20 (e) is the oscillogram of the first clamping capacitance voltage VC1 and the second clamping capacitance voltage VC2, Figure 20 (f) is the oscillogram of the first charge pump capacitance voltage VC3, and Figure 20 (g) is the first switching tube current i
dS1with second switch tube current i
dS2oscillogram, Figure 20 (h) is the first switch tube voltage V
dS1with second switch tube voltage V
dS2oscillogram, Figure 20 (i) is the first clamp diode current i
d1with the second clamp diode current i
d2oscillogram, Figure 20 (j) is the first clamping diode voltage V
d1with the second clamper tube voltage V
d2oscillogram, Figure 20 (k) is the first charge pump diode current i
d3oscillogram, Figure 20 (l) is the first charge pump diode voltage V
d3oscillogram, Figure 20 (m) is diode current i
d4oscillogram, Figure 20 (n) is diode voltage V
d4oscillogram.Figure 21 (a) is depicted as corresponding equivalent electric circuit to Figure 21 (f).Wherein Figure 21 (a) is mode 1 equivalent circuit diagram in [t0-t1] stage, Figure 21 (b) is mode 2 equivalent circuit diagram in [t1-t2] stage, Figure 21 (c) is mode 3[t2-t3] equivalent circuit diagram in stage, Figure 21 (d) is mode 4[t3-t4] equivalent circuit diagram in stage, Figure 21 (e) is mode 5[t4-t5] equivalent circuit diagram in stage, Figure 21 (f) is mode 6 equivalent circuit diagram in [t5-t6] stage.
1) mode 1 [t0-t1].In this stage, switching tube S1, S2 transfer conducting to from cut-off, and equivalent electric circuit is as shown in Figure 21 (a).Switch tube voltage is dropped rapidly to 0, is subject to the impact of leakage inductance Lk, and the current i n1, the in2 that reflex to N1, N2 winding are similar to since 0 rising, and this contributes to reduce the switching loss of metal-oxide-semiconductor, diode D1, D2, the anti-cut-off partially of D3, D4 conducting.Leakage inductance Lk is discharged to the difference of the input supply voltage nVi of coupling inductance N3 winding by (Vi+VC2+VC3-Vo) and conversion, until leakage inductance current i Lk drops to 0.
2) mode 2 [t1-t2].This stage switch pipe S1, S2 are still in conducting state, and equivalent electric circuit is as shown in Figure 21 (b).Constantly, leakage inductance current i Lk is 0 to t1, and diode D4 turn-offs naturally, has well alleviated reverse-recovery problems.ILk continues to reduce subsequently, starts as negative, and D3 transfers conducting state to, and leakage inductance Lk and clamping capacitance C1 be 3 chargings of charge pump capacitor C jointly, reflexes to the linearity rising of current i n1, in2 of N1, N2 winding, and output filter capacitor Co provides energy for load.
3) mode 3 [t2-t3].Equivalent electric circuit is as shown in Figure 21 (c).Constantly, switching tube transfers off state to by conducting to t2, and current i n1, the in2 that reflexes to N1, N2 winding be fast to the junction capacitance charging of S1, S2, until diode D1, D2 voltage drop to 0.
4) mode 4 [t3-t4].Constantly, diode D1, D2 start conducting to t3, and equivalent electric circuit is as shown in Figure 21 (d).Current i n1, in2 charge to clamping capacitance C1, C2 by D1, D2 respectively.Leakage inductance Lk is charged to the voltage nVC1 sum of coupling inductance N3 winding by (VC3-VC1) and conversion, until leakage inductance current i Lk rises to 0, this stage load energy is still provided by output filter capacitor Co.
5) mode 5 [t4-t5].Equivalent electric circuit is as shown in Figure 21 (e).Constantly, leakage inductance current i Lk rises to 0 to t4, and diode D3 turn-offs naturally, has alleviated reverse-recovery problems.Leakage inductance current i Lk rise to continue rises, and starts as just.Diode D4 starts conducting, reflexes to current i n1, the in2 of N1, N2 winding still for just, continue to C1, and C2 charging, load-side energy is provided jointly by input power Vi, capacitor C 2, C3.
6) mode 6 [t5-t6].Equivalent electric circuit is as shown in Figure 21 (f).Constantly, N1, N2 winding current in1, in2 drop to 0 to t5, and diode D1, D2 are nature and turn-off, and have alleviated reverse-recovery problems.The leakage inductance of this stage coupling inductance will produce resonance with switching tube junction capacitance, and still, due to the existence of clamping diode D1, D2 and clamping capacitance C1, C2, in this resonant process, the voltage peak of metal-oxide-semiconductor can, by clamp, therefore not increase the voltage stress of MOS.
Analysis based on above circuit, technique effect further instruction of the present invention is as follows:
1. high-gain DC/DC converter is because voltage gain (Vo/Vi) is large, so input current large (Ii=Io*Vo/Vi), the high-gain converter (see first width figure of the explanation of active-clamp and passive-clamp) of tradition based on Boost structure, when switching tube S opens, input current all flows into switching tube, the current stress of switching tube is very large, conduction loss large (P=Irms^2*Rds (on))
2. traditional high-gain DC/DC converter is based on BOOST structure, and switch tube voltage stress is large, the conducting resistance Rds of switching tube (on) and voltage stress positive correlation.Conducting resistance is very large, contact description 1, and the conduction loss of switching tube is huge.
3., although the double pipe structure proposing, contains two switching tubes, the current stress of switching tube is approximately original 1/2, voltage stress is approximately original 1/2, contact description 1,2, can be similar to and think that the conduction loss of two switching tubes of double pipe structure is original in 1/4 of Boost structure.High-gain DC/DC converter is often used in photovoltaic generation occasion, and the cost of switches that increase can be ignored with respect to the switching loss reducing more.
4. the converter proposing can be realized the zero-current switching of all diodes, and this is for the reverse recovery loss that reduces diode, and it is very helpful reducing EMI interference.
5. the double pipe structure in the converter proposing, although compared with traditional B OOST structure many an inductance, greatly reduce inductive current, in double pipe structure, the cumulative volume of two inductance is compared with the inductance of traditional B OOST structure, volume size is the same.
Because practical devices (MOSFET, IGBT etc.) is not desirable, in switching process, there is switching loss, cannot realize high frequency, improve switching frequency, to reducing inductance in converter, the value of electric capacity, volume size, is very helpful.
The active-clamp converter proposing, the no-voltage that can realize whole 4 switching tubes is open-minded, makes the switching loss of power switch pipe be approximately 0, and switching frequency improves greatly, and the volume of whole converter can reduce, and power density is promoted.
Visible, the two-tube booster converter of three winding coupled inductance with charge pump of the present invention has less master power switch tube voltage stress and larger voltage gain, and diode does not exist reverse-recovery problems simultaneously.
Claims (4)
1. with the two-tube booster converter of three winding coupled inductance of charge pump, it is characterized in that: comprise DC power supply, the first booster circuit, the second booster circuit, the first charge pump boosting unit, the first clamping circuit, the second clamping circuit, the first switching circuit and load, the voltage of described DC power supply output is divided into two-way output, and wherein the first charge pump boosting unit is inputted on a road after the first booster circuit tentatively boosts, and through the first charge pump boosting unit secondary booster, inputs to one end of load by the first switching circuit, another road inputs to the load other end after the second booster circuit tentatively boosts, an output filter capacitor in parallel also at the two ends of load, described the first booster circuit comprises the first inductance and the first switching tube, and described the second booster circuit comprises the second inductance and second switch pipe, described the first clamping circuit comprises the first clamping capacitance and the first clamping diode, described the second clamping circuit comprises the second clamping capacitance and the second clamping diode, one end of the first inductance, one end of the drain electrode of second switch pipe and the first clamping capacitance is connected to respectively direct voltage source positive pole, one end of the second inductance, one end of the source electrode of the first switching tube and the second clamping capacitance is connected to respectively direct voltage source negative pole, the other end of the first clamping capacitance is connected with the negative electrode of the first clamping diode, the other end of the first inductance, the anode of the first clamping diode is connected with the drain electrode of the first switching tube respectively, the other end of the second clamping capacitance is connected with the anode of the second clamping diode and the other end of load respectively, and the negative electrode of the other end of the second inductance and the second clamping diode is connected with the source electrode of second switch pipe respectively.
2. the two-tube booster converter of three winding coupled inductance with charge pump according to claim 1, it is characterized in that: the first described charge pump boosting unit comprises the 3rd inductance, the first charge pump diode and the first charge pump electric capacity, described the first switching circuit is diode, wherein, the other end of the first clamping capacitance is connected to the anode of the first charge pump diode, the negative electrode of the first charge pump diode is connected with the anode of diode and one end of the first charge pump electric capacity respectively, the negative electrode of diode is connected to one end of load, the other end of the first charge pump electric capacity is connected with one end of the 3rd inductance, the other end of the 3rd inductance is connected with input side DC source is anodal, described the first inductance, the second inductance and the 3rd inductance form coupling inductance, the wherein anodal one end being connected of the first inductance and input side DC source, the 3rd inductance and the anodal one end being connected of input side DC source, and one end of being connected with the source electrode of second switch pipe of the second inductance Same Name of Ends that is coupling inductance.
3. the two-tube booster converter of three winding coupled inductance with charge pump according to claim 1, it is characterized in that: the first described charge pump boosting unit comprises the 3rd inductance, the first charge pump diode and the first charge pump electric capacity, described the first switching circuit is diode, wherein, the negative electrode of the first charge pump diode is connected with the anode of diode and one end of the first charge pump electric capacity respectively, the negative electrode of diode is connected to one end of load, the other end of the first charge pump electric capacity is connected with one end of the 3rd inductance, the other end of the 3rd inductance respectively with the negative electrode of the first clamping diode, the anode of the first charge pump diode is connected, described the first inductance, the second inductance and the 3rd inductance form coupling inductance, the wherein anodal one end being connected of the first inductance and input side DC source, one end that the 3rd inductance is connected with the negative electrode of the first clamping diode, and one end of being connected with the source electrode of second switch pipe of the second inductance Same Name of Ends that is coupling inductance.
4. the two-tube booster converter of three winding coupled inductance with charge pump according to claim 1 and 2, is characterized in that: first, second switching tube is metal-oxide-semiconductor or IGBT pipe.
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| CN108712076A (en) * | 2018-06-21 | 2018-10-26 | 哈尔滨理工大学 | A kind of fuel cell car DC/DC transformer configurations and its control method |
| CN110504833A (en) * | 2019-08-25 | 2019-11-26 | 南京理工大学 | A kind of high-gain boost converter based on active electric network |
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| CN105262342A (en) * | 2015-09-30 | 2016-01-20 | 深圳市航天新源科技有限公司 | High efficiency non-isolation type boost circuit |
| CN105262342B (en) * | 2015-09-30 | 2018-07-20 | 深圳市航天新源科技有限公司 | A kind of efficient non-isolation type booster circuit |
| TWI575860B (en) * | 2015-11-18 | 2017-03-21 | 國立臺灣科技大學 | Boost converter |
| CN105827110A (en) * | 2016-05-30 | 2016-08-03 | 安徽工业大学 | Three-winding coupled inductor voltage-doubling type single switch tube boost direct-current converter |
| CN106655765B (en) * | 2016-10-19 | 2024-03-22 | 航天柏克(广东)科技有限公司 | Single-input double-independent-output boost circuit and inverter thereof |
| CN106655765A (en) * | 2016-10-19 | 2017-05-10 | 佛山市柏克新能科技股份有限公司 | Boosting circuit with single input and double independent output and inversion device thereof |
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| CN107896059B (en) * | 2017-10-27 | 2020-04-17 | 北京交通大学 | Capacitor clamp type high-gain boost converter based on staggered parallel connection |
| CN108712076A (en) * | 2018-06-21 | 2018-10-26 | 哈尔滨理工大学 | A kind of fuel cell car DC/DC transformer configurations and its control method |
| US20220140410A1 (en) * | 2019-02-22 | 2022-05-05 | Polarium Energy Solutions Ab | Noise filtering in a battery module |
| CN110504833A (en) * | 2019-08-25 | 2019-11-26 | 南京理工大学 | A kind of high-gain boost converter based on active electric network |
| CN117277824A (en) * | 2023-11-21 | 2023-12-22 | 南京信息工程大学 | High-gain isolation type quasi-Z-source soft switching DC-DC converter |
| CN117277824B (en) * | 2023-11-21 | 2024-01-30 | 南京信息工程大学 | High-gain isolation type quasi-Z-source soft switching DC-DC converter |
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