CN201726309U - Power mosfet power factor corrector - Google Patents
Power mosfet power factor corrector Download PDFInfo
- Publication number
- CN201726309U CN201726309U CN2010202886122U CN201020288612U CN201726309U CN 201726309 U CN201726309 U CN 201726309U CN 2010202886122 U CN2010202886122 U CN 2010202886122U CN 201020288612 U CN201020288612 U CN 201020288612U CN 201726309 U CN201726309 U CN 201726309U
- Authority
- CN
- China
- Prior art keywords
- power
- power mosfet
- diode
- mosfet
- links
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Rectifiers (AREA)
Abstract
A power MOSFET power factor corrector in the technical field of rectifier transformation comprises a filter circuit, a rectifier circuit and a booster circuit; wherein, the filter circuit is used for absorbing high-frequency current and acquiring sine-wave current waveform; the rectifier circuit finishes converting AC voltage into sine half-wave voltage; the booster circuit finishes power factor correction and improves DC voltage outputted. The power MOSFET power factor corrector adopts the advantage of low loss of MOSFET and parallel diodes, thereby reducing loss and improving efficiency.
Description
Technical field
The utility model relates to a kind of device of rectifier transformer technical field, specifically is a kind of power MOSFET power factor corrector.
Background technology
Along with power electronic technology develops rapidly, it is more and more ripe that the technical development of single-phase power factor correcting device gets, and brought into play enormous function aspect net side power factor and the inhibition side harmonics electric current improving.In traditional single-phase power factor correcting device, chopping switch adopts igbt transistor, rectifier diode adopts reverse fast recovery diode, adopt diode rectifier bridge in addition, like this when more high-power output, igbt transistor, reverse fast recovery diode, diode rectifier bridge switching loss and on-state loss are very big, have not only reduced system effectiveness, nor have been beneficial to radiating treatment.Need to improve the type selecting of power switch in the single-phase power factor correcting device and the structure of rectifier bridge for this reason.
Find through retrieval single-phase power factor correcting device technology, Yang Xijun. single-phase AC-DC converter and the research of in the family expenses convertible frequency air-conditioner, using thereof. the post-doctor of the Shanghai Communications University report of setting off, 2004, put down in writing a kind of Single-Phase Active Power Factor Correction Circuit, wherein adopted traditional circuit topology and traditional switch configuration, power factor correction is respond well.In view of the elementary developing stage that is in single-phase power factor correcting, not special consideration efficient improves problem.
Further retrieval is found, Yang Xinghua etc. the analysis of APFC and realization. electrical applications .2007 V26, No7 pp.54-57. has put down in writing a kind of Single-Phase Active Power Factor Correction Circuit of big power output, wherein adopted traditional circuit arrangement, in order to raise the efficiency, the power igbt transistor has adopted part switch wave chopping technology.
Above-mentioned technology is because switch I GBT transistor speed is low, on-state voltage drop is high, and the switching loss and the on-state loss of chopping switch igbt transistor are bigger.Because the on-state voltage drop height, the loss of rectifier diode is bigger.The on-state voltage drop of diode is bigger in the diode rectifier bridge in addition, and the rectifier bridge loss is bigger.Increase loss, reduced efficient, influenced radiating treatment.
The utility model content
The utility model provides a kind of power MOSFET power factor corrector at the prior art above shortcomings, utilizes low advantage of MOSFET loss and the low advantage of parallel diode loss to reduce the wastage, and raises the efficiency.
The utility model is achieved through the following technical solutions, the utility model comprises: filter circuit, rectification circuit and booster circuit, wherein: the input of filter circuit is connected with rectification circuit with single phase poaer supply respectively with output, and the input of booster circuit links to each other with load with rectification circuit respectively with output.
Described rectification circuit comprises: four power diodes, two power MOSFETs and a resistance, wherein: first power diode links to each other with the drain electrode and the filter circuit of first power MOSFET respectively after the parallel connection in the same way with second power diode, the 3rd power diode links to each other with the drain electrode of second power MOSFET and the other end of filter circuit respectively after the parallel connection in the same way with the 4th power diode, the source electrode of first power MOSFET with link to each other with an end of second resistance in the other end of first resistance and the booster circuit respectively after the source electrode of second power MOSFET links to each other.
Described filter circuit comprises: ac capacitor, one end of this ac capacitor respectively with the live wire of single phase poaer supply, rectification circuit in first power diode after the parallel connection link to each other with the common anode of second power diode and the drain electrode of first power MOSFET, the other end of ac capacitor respectively with the zero line of single phase poaer supply, rectification circuit in the 3rd power diode after the parallel connection link to each other with the common anode of the 4th power diode and the drain electrode of second power MOSFET.
Described booster circuit comprises: boost inductance, two power MOSFETs, electrochemical capacitor and resistance, wherein: an end of first boost inductance respectively with rectification circuit in the negative electrode of first power diode and second power diode, one end of the drain electrode of first power MOSFET and first resistance links to each other, the other end of first boost inductance links to each other with drain electrode of the 3rd power MOSFET and the 4th power MOSFET source electrode respectively, the drain electrode of the 4th power MOSFET links to each other with the anode of first electrochemical capacitor and an end of load respectively, the 3rd power MOSFET source electrode respectively with the other end of second resistance, ground connection after the negative electrode of first electrochemical capacitor and the other end of load link to each other.
Filter circuit in the utility model is responsible for the filtering high-frequency current, obtains sinusoidal current waveform; Rectification circuit is responsible for single-phase sinusoidal voltage rectification is become half-sinusoid voltage; It is the direct voltage of high amplitude, low ripple that booster circuit is responsible for the half-sinusoid boost in voltage.The utility model utilizes power MOSFET to replace 2 diodes in igbt transistor and reverse fast recovery diode and the rectifier, forms the rectifier bridge of low side half control, and all power MOSFETs adopt single supply Driving technique.Repertoire with power factor correction, and novel, efficient advantages of higher.
Description of drawings
Fig. 1 is the utility model structural representation.
Embodiment
Below embodiment of the present utility model is elaborated; present embodiment is being to implement under the prerequisite with technical solutions of the utility model; provided detailed execution mode and concrete operating process, but protection range of the present utility model is not limited to following embodiment.
As shown in Figure 1, present embodiment comprises: filter circuit 1, rectification circuit 2 and booster circuit 3, wherein: order phase power supply before the filter circuit 1, after connect rectification circuit 2, connect booster circuit behind the rectification circuit 2, connect load behind the booster circuit 3, as resistance or inverter etc.
Described filter circuit comprises the first ac capacitor C1, the first power diode D1 in the end of this ac capacitor C1 and the live wire of single phase poaer supply, the rectification circuit 2 after the parallel connection links to each other with the common anode of the second power diode D2, the drain electrode of the first power MOSFET S1, and the 3rd power diode D3 in the zero line of its other end and single phase poaer supply, the rectification circuit 2 after the parallel connection links to each other with the common anode of the 4th power diode D4, the drain electrode of the second power MOSFET S2.
Described rectification circuit comprises: the first power diode D1～the 4th power diode D4, the first power MOSFET tube S1, the second power MOSFET tube S2 and first resistance R 1, wherein: the first power diode D1 and of the drain electrode of second power diode D2 back in parallel in the same way with the first power MOSFET S1, an end of first capacitor C 1 links to each other in the filter circuit 1, the 3rd power diode D3 and of the drain electrode of the 4th power diode D4 back in parallel in the same way with the second power MOSFET D2, the other end of first capacitor C 1 links to each other in the filter circuit 1, and the source electrode of the first power MOSFET S1 links to each other with the source electrode of the second power MOSFET S2 afterwards and the other end of first resistance R 1, an end of second resistance R 2 links to each other in the booster circuit 2.
Described booster circuit comprises: boost inductance L1, the 3rd power MOSFET S3, the 4th power MOSFET S4, electrochemical capacitor E1 and second resistance R 2, wherein: the first power diode D1 links to each other with the negative electrode of the second power diode D2, the drain electrode of the first power MOSFET S1 and an end of first resistance R 1 in the end of the first boost inductance L1 and the rectification circuit 2, and its other end drains with the 3rd power MOSFET S3, the 4th power MOSFET S4 source electrode links to each other.The 4th power MOSFET S4 drain electrode links to each other with the anode of the first electrochemical capacitor E1, the end of load R3.The other end of the other end of the 3rd power MOSFET S3 source electrode and second resistance R 2, the negative electrode of the first electrochemical capacitor E1, the load R3 back ground connection that links to each other.
Single phase alternating current (A.C.) input voltage in the present embodiment is 220VAC, output dc voltage 365VDC.Filter capacitor C1 is 0.47uF, exchanges 275VAC.Diode D1～D2 is one group of common cathode or co-anode diode, and diode D1～D2 is one group of common cathode or co-anode diode.Power MOSFET S1～S4 diode-built-in, 50A/25 ℃/500V.Inductance L 1 is 0.75mH, 25A.Electrochemical capacitor E1 is 5x560uF, 400V.Resistance R 2 is 0.01 Ω, and 5W is used to detect inductive current.Electronics R1 is 68k Ω, 2W.Power MOSFET S1, S2 and S3 adopt conventional drive circuit, and S4 adopts the bootstrapping drive circuit.
Present embodiment utilizes power MOSFET to replace 2 diodes in igbt transistor and reverse fast recovery diode and the rectifier, and with common cathode or the diode use in parallel of anode altogether, connect with power NOSFET and form a brachium pontis in back in parallel, all power MOSFETs adopt the single supply Driving technique.MOSFET S1, S2, S3 are one group of drive circuit commonly used, and MOSFET S4 is another group bootstrapping drive circuit.Continuous conducting 10ms of S1 power-half period, the continuous conducting 10ms of S2 power supply positive half period, on-state loss and switching loss are lower when comparing diode rectification.The drive signal complementation of S3, S4, and Dead Time is set.Repertoire with power factor correction, and novel, efficient advantages of higher.
Claims (4)
1. power MOSFET power factor corrector, comprise: filter circuit, rectification circuit and booster circuit, it is characterized in that: the input of filter circuit is connected with rectification circuit with single phase poaer supply respectively with output, and the input of booster circuit links to each other with load with rectification circuit respectively with output.
2. power MOSFET power factor corrector according to claim 1, it is characterized in that, described rectification circuit comprises: four power diodes, two power MOSFETs and a resistance, wherein: first power diode links to each other with the drain electrode and the filter circuit of first power MOSFET respectively after the parallel connection in the same way with second power diode, the 3rd power diode links to each other with the drain electrode of second power MOSFET and the other end of filter circuit respectively after the parallel connection in the same way with the 4th power diode, the source electrode of first power MOSFET with link to each other with an end of second resistance in the other end of first resistance and the booster circuit respectively after the source electrode of second power MOSFET links to each other.
3. power MOSFET power factor corrector according to claim 2, it is characterized in that, described filter circuit comprises: ac capacitor, one end of this ac capacitor respectively with the live wire of single phase poaer supply, rectification circuit in first power diode after the parallel connection link to each other with the common anode of second power diode and the drain electrode of first power MOSFET, the other end of ac capacitor respectively with the zero line of single phase poaer supply, rectification circuit in the 3rd power diode after the parallel connection link to each other with the common anode of the 4th power diode and the drain electrode of second power MOSFET.
4. power MOSFET power factor corrector according to claim 2, it is characterized in that, described booster circuit comprises: boost inductance, two power MOSFETs, electrochemical capacitor and resistance, wherein: an end of first boost inductance respectively with rectification circuit in the negative electrode of first power diode and second power diode, one end of the drain electrode of first power MOSFET and first resistance links to each other, the other end of first boost inductance links to each other with drain electrode of the 3rd power MOSFET and the 4th power MOSFET source electrode respectively, the drain electrode of the 4th power MOSFET links to each other with the anode of first electrochemical capacitor and an end of load respectively, the 3rd power MOSFET source electrode respectively with the other end of second resistance, ground connection after the negative electrode of first electrochemical capacitor and the other end of load link to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202886122U CN201726309U (en) | 2010-08-11 | 2010-08-11 | Power mosfet power factor corrector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202886122U CN201726309U (en) | 2010-08-11 | 2010-08-11 | Power mosfet power factor corrector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201726309U true CN201726309U (en) | 2011-01-26 |
Family
ID=43494662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202886122U Expired - Fee Related CN201726309U (en) | 2010-08-11 | 2010-08-11 | Power mosfet power factor corrector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201726309U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102664538A (en) * | 2012-05-15 | 2012-09-12 | 南昌工程学院 | High-power-factor dielectric barrier discharge power supply circuit |
| CN102843049A (en) * | 2011-06-20 | 2012-12-26 | 昆山巩诚电器有限公司 | Rectifier voltage regulator for motorcycles |
| CN102957308A (en) * | 2011-08-31 | 2013-03-06 | 艾默生网络能源有限公司 | Bridgeless PFC (power factor correction) circuit |
| CN103706923A (en) * | 2013-12-24 | 2014-04-09 | 浙江颐顿机电有限公司 | Inverter welder |
| CN106797119A (en) * | 2014-09-05 | 2017-05-31 | 飞利浦灯具控股公司 | Polarity correction circuit |
| CN104205598B (en) * | 2012-03-20 | 2019-04-19 | 飞利浦灯具控股公司 | Two line flyback light modulators and its operating method |
-
2010
- 2010-08-11 CN CN2010202886122U patent/CN201726309U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102843049A (en) * | 2011-06-20 | 2012-12-26 | 昆山巩诚电器有限公司 | Rectifier voltage regulator for motorcycles |
| CN102843049B (en) * | 2011-06-20 | 2015-07-22 | 上海渝癸德信息技术服务中心 | Rectifier voltage regulator for motorcycles |
| CN102957308A (en) * | 2011-08-31 | 2013-03-06 | 艾默生网络能源有限公司 | Bridgeless PFC (power factor correction) circuit |
| CN104205598B (en) * | 2012-03-20 | 2019-04-19 | 飞利浦灯具控股公司 | Two line flyback light modulators and its operating method |
| CN102664538A (en) * | 2012-05-15 | 2012-09-12 | 南昌工程学院 | High-power-factor dielectric barrier discharge power supply circuit |
| CN103706923A (en) * | 2013-12-24 | 2014-04-09 | 浙江颐顿机电有限公司 | Inverter welder |
| CN103706923B (en) * | 2013-12-24 | 2015-09-09 | 浙江颐顿机电有限公司 | A kind of inversion welding machine |
| CN106797119A (en) * | 2014-09-05 | 2017-05-31 | 飞利浦灯具控股公司 | Polarity correction circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101667789B (en) | Inverter circuit used for solar energy photovoltaic grid connection and device thereof | |
| CN103051233B (en) | Non-isolated single-phase photovoltaic grid-connected inverter and on-off control timing sequence thereof | |
| CN102185514B (en) | Single-phase three-level inverter | |
| CN101902143B (en) | Capacitor-clamped three-level dual-buck half-bridge inverter | |
| CN201726309U (en) | Power mosfet power factor corrector | |
| CN103001484B (en) | The modulator approach of low auxiliary voltage zero voltage switch Bridgeless Power Factor Corrector | |
| CN105048850B (en) | A kind of single-stage ZVS types push-pull type high frequency link DC/AC converters | |
| CN105099249A (en) | High-reliability double-input inverter | |
| CN201726319U (en) | Single phase alternating current converter | |
| CN202524315U (en) | DC/AC grid-connected inversion circuit | |
| CN104242716B (en) | High-reliability non-switching-loss type non-isolated inverter and switching control time sequence thereof | |
| CN106712558A (en) | High-reliability five-level three-phase dual-input inverter | |
| CN102347697B (en) | Direct DC-AC (direct current-alternating current) converting circuit for low-voltage input full bridge inverter | |
| CN102969885B (en) | Without auxiliary voltage zero voltage switch Bridgeless Power Factor Corrector and modulator approach | |
| CN201726311U (en) | Half-controlled bridge arm power MOSFET power factor corrector | |
| CN108683345B (en) | Three-phase improved double-Buck/Boost converter based on SiC diode | |
| CN104967304B (en) | One kind is based on no bridge CUK isolated form Three Phase Power Factor Correction Converters | |
| CN105429452A (en) | Common-mode rejection dual-Boost bridgeless PFC converter | |
| CN102255540B (en) | Method, circuit and converter for converting DC voltage into AC voltage | |
| CN104967350A (en) | High-efficiency H7-type single-phase non-isolated grid-connected inverter | |
| CN205212694U (en) | Two boost of common mode rejection do not have bridge PFC converter | |
| CN112701905B (en) | Single-phase three-level power factor correction circuit based on pseudo totem-pole structure | |
| CN108964502A (en) | A kind of single-phase non-isolated active clamp MOSFET inverter | |
| CN205355946U (en) | Uninterrupted power supply | |
| CN201726310U (en) | Total power MOSFET power factor corrector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110126 Termination date: 20110811 |