CN201726310U - Total power MOSFET power factor corrector - Google Patents
Total power MOSFET power factor corrector Download PDFInfo
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- CN201726310U CN201726310U CN2010202888202U CN201020288820U CN201726310U CN 201726310 U CN201726310 U CN 201726310U CN 2010202888202 U CN2010202888202 U CN 2010202888202U CN 201020288820 U CN201020288820 U CN 201020288820U CN 201726310 U CN201726310 U CN 201726310U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
A kind of total power MOSFET power factor corrector of rectifier transformer technical field, comprise: filter circuit, rectification circuit and booster circuit, wherein: the input of filter circuit is connected with rectification circuit with single phase poaer supply respectively with output, and the input of booster circuit is connected with rectification circuit with single phase poaer supply respectively with output.This device replaces IGBT and whole diode with power MOSFET, utilizes the low advantage of switch mosfet loss and on-state loss to reduce the wastage, and raises the efficiency.
Description
Technical field
The utility model relates to a kind of device of rectifier transformer technical field, specifically is a kind of total power MOSFET power factor corrector.
Background technology
Along with power electronic technology develops rapidly, it is more and more ripe that the technical development of single-phase power factor correcting device gets, and brought into play enormous function aspect net side power factor and the inhibition side harmonics electric current improving.In traditional single-phase power factor correcting device, chopping switch adopts IGBT, rectifier diode adopts reverse fast recovery diode, adopt diode rectifier bridge in addition, like this when more high-power output, IGBT, reverse fast recovery diode, diode rectifier bridge switching loss and on-state loss are very big, have not only reduced system effectiveness, nor have been beneficial to radiating treatment.Need to improve the type selecting of power switch in the single-phase power factor correcting device and the structure of rectifier bridge for this reason.
Find through retrieval single-phase power factor correcting device technology, Yang Xijun. single-phase AC-DC converter and the research of in the family expenses convertible frequency air-conditioner, using thereof. the post-doctor of the Shanghai Communications University report of setting off, 2004, put down in writing a kind of Single-Phase Active Power Factor Correction Circuit, wherein adopted traditional circuit topology and traditional switch configuration, power factor correction is respond well.In view of the elementary developing stage that is in single-phase power factor correcting, not special consideration efficient improves problem.
Further retrieval is found, Yang Xinghua etc. the analysis of APFC and realization. electrical applications .2007 V26, No7 pp.54-57. has put down in writing a kind of Single-Phase Active Power Factor Correction Circuit of big power output, wherein adopted traditional circuit arrangement, in order to raise the efficiency, power IGBT has adopted part switch wave chopping technology.
In traditional single-phase power factor correcting device, because switch I GBT speed is low, on-state voltage drop is high, switching loss and the on-state loss of chopping switch IGBT are bigger.Because the on-state voltage drop height, the loss of rectifier diode is bigger.The on-state voltage drop of diode is bigger in the diode rectifier bridge in addition, and the rectifier bridge loss is bigger.Increase loss, reduced efficient, influenced radiating treatment.
The utility model content
The utility model is at the prior art above shortcomings, a kind of total power MOSFET power factor corrector is provided, power MOSFET is replaced IGBT and whole diode, utilize the low advantage of switch mosfet loss and on-state loss to reduce the wastage, raise the efficiency.
The utility model is achieved through the following technical solutions, the utility model comprises: filter circuit, rectification circuit and booster circuit, wherein: the input of filter circuit is connected with rectification circuit with single phase poaer supply respectively with output, and the input of booster circuit is connected with rectification circuit with single phase poaer supply respectively with output.
Described rectification circuit comprises: four power MOSFETs and a resistance, wherein: link to each other with an end of filter circuit after the source electrode of first power MOSFET links to each other with the drain electrode of the 3rd power MOSFET, after linking to each other with the drain electrode of the 4th power MOSFET, the source electrode of second power MOSFET links to each other with the other end of filter circuit, the drain electrode of first power MOSFET with link to each other with an end and the booster circuit of first resistance respectively after the drain electrode of second power MOSFET links to each other, the source electrode of the 3rd power MOSFET with link to each other with the other end and the booster circuit of first resistance respectively after the source electrode of the 4th power MOSFET links to each other.
Described filter circuit comprises: ac capacitor, one end of this ac capacitor respectively with the live wire of single phase poaer supply and rectification circuit in the source electrode of first power MOSFET link to each other with the mid point of first brachium pontis of the formation of the drain electrode of the 3rd MOSFET, the source electrode of second power MOSFET links to each other with the mid point of second brachium pontis of the formation of the drain electrode of the 4th MOSFET in the other end of ac capacitor and the zero line of single phase poaer supply, the rectification circuit.
Described booster circuit comprises: a boost inductance, two power MOSFETs, electrochemical capacitor and resistance, wherein: an end of first boost inductance respectively with rectification circuit in the negative electrode of first power diode and second power diode, one end of the drain electrode of first power MOSFET and first resistance links to each other, the other end of first boost inductance links to each other with drain electrode of the 3rd power MOSFET and the 4th power MOSFET source electrode, the 4th power MOSFET drain electrode links to each other with the anode of first electrochemical capacitor and an end of load resistance respectively, the 3rd power MOSFET source electrode respectively with the other end of second resistance, ground connection after the negative electrode of first electrochemical capacitor and the other end of load resistance link to each other.
Filter circuit in the utility model is responsible for the filtering high-frequency current, obtains sinusoidal current waveform; Rectification circuit is responsible for single-phase sinusoidal voltage rectification is become half-sinusoid voltage; It is the direct voltage of high amplitude, low ripple that booster circuit is responsible for the half-sinusoid boost in voltage.The utility model utilizes power MOSFET to replace 4 power diodes in IGBT and reverse fast recovery diode and the rectifier, forms the rectifier bridge of full control, and all power MOSFETs adopt the single supply Driving technique.Repertoire with power factor correction, and novel, efficient advantages of higher.
Description of drawings
Fig. 1 is the utility model structural representation.
Embodiment
Below embodiment of the present utility model is elaborated; present embodiment is being to implement under the prerequisite with technical solutions of the utility model; provided detailed execution mode and concrete operating process, but protection range of the present utility model is not limited to following embodiment.
The utility model is achieved through the following technical solutions, the utility model comprises: filter circuit 1, rectification circuit 2 and booster circuit 3, wherein: order phase power supply before its filter circuit 1, after connect rectification circuit 2, connect booster circuit 3 behind the rectification circuit 2, connect load behind the booster circuit 3.
Described filter circuit comprises: ac capacitor C1, the source electrode of the first power MOSFET S1 links to each other with the mid point of the formation brachium pontis of the drain electrode of the 3rd MOSFET S3 in the end of this ac capacitor C1 and the live wire of single phase poaer supply, the rectification circuit, and the source electrode of the second power MOSFET S2 links to each other with the mid point of the formation brachium pontis of the drain electrode of the 4th MOSFET S4 in the zero line of its other end and single phase poaer supply, the rectification circuit.
Described rectification circuit comprises: four power MOSFETs and a resistance, wherein: link to each other with an end of first capacitor C 1 in the filter circuit 1 after the source electrode of the first power MOSFET S1 links to each other with the drain electrode of the 3rd power MOSFET S3, link to each other with the other end of first capacitor C 1 in the filter circuit 1 after the source electrode of the second power MOSFET S2 links to each other with the drain electrode of the 4th power MOSFET S4.Link to each other with the drain electrode of second power MOSFET S2 back and an end of first resistance R 1, the end of first inductance L 1 in the booster circuit 3 of the drain electrode of the first power MOSFET S1 links to each other.Link to each other with the source electrode of the 4th power MOSFET S4 back and the other end of first resistance R 1, the end of second resistance R 2 in the booster circuit 3 of the source electrode of the 3rd power MOSFET S3 links to each other.
Described booster circuit comprises: boost inductance L1, the 3rd power MOSFET S3, the 4th power MOSFET S4, electrochemical capacitor E1 and second resistance R 2, wherein: the first power diode D1 links to each other with the negative electrode of the second power diode D2, the drain electrode of the first power MOSFET S1 and an end of first resistance R 1 in the end of the first boost inductance L1 and the rectification circuit 2, and its other end drains with the 3rd power MOSFET S3, the 4th power MOSFET S4 source electrode links to each other.The 4th power MOSFET S4 drain electrode links to each other with the anode of the first electrochemical capacitor E1, the end of load resistance R3.The other end of the other end of the 3rd power MOSFET S3 source electrode and second resistance R 2, the negative electrode of the first electrochemical capacitor E1, the load resistance R3 back ground connection that links to each other.
Single phase alternating current (A.C.) input voltage in the present embodiment is 220VAC, output dc voltage 365VDC.Filter capacitor C1 is 0.47uF, exchanges 275VAC.Power MOSFET S1～S6 diode-built-in, 50A/25 ℃/500V.Inductance L 1 is 0.75mH, 25A.Electrochemical capacitor E1 is 5x560uF, 400V.Resistance R 2 is 0.01 Ω, and 5W is used to detect inductive current.Electronics R1 is 68k Ω, 2W.Power MOSFET S3, S4 and S5 adopt conventional drive circuit, and S1, S2, S6 adopt the bootstrapping drive circuit.Switching frequency is 16kHz.
The utility model utilizes power MOSFET to replace 4 diodes in IGBT and reverse fast recovery diode and the rectifier, and the series connection of 2 power MOSFETs forms a brachium pontis, and all power MOSFETs adopt the single supply Driving technique.MOSFET S3, S4, S5 are one group of drive circuit commonly used, and MOSFET S1, S2, S6 are another group bootstrapping drive circuit.S1, the continuous conducting 10ms of S4 power supply positive half period, S2, continuous conducting 10ms of S3 power-half period, on-state loss and switching loss are lower when comparing diode rectification.The drive signal complementation of S5, S6, and Dead Time is set.Repertoire with power factor correction, and novel, efficient advantages of higher.
Claims (4)
1. total power MOSFET power factor corrector, comprise: filter circuit, rectification circuit and booster circuit, wherein: the input of filter circuit is connected with rectification circuit with single phase poaer supply respectively with output, and the input of booster circuit is connected with rectification circuit with single phase poaer supply respectively with output.
2. total power MOSFET power factor corrector according to claim 1, it is characterized in that, described rectification circuit comprises: four power MOSFETs and a resistance, wherein: link to each other with an end of filter circuit after the source electrode of first power MOSFET links to each other with the drain electrode of the 3rd power MOSFET, after linking to each other with the drain electrode of the 4th power MOSFET, the source electrode of second power MOSFET links to each other with the other end of filter circuit, the drain electrode of first power MOSFET with link to each other with an end and the booster circuit of first resistance respectively after the drain electrode of second power MOSFET links to each other, the source electrode of the 3rd power MOSFET with link to each other with the other end and the booster circuit of first resistance respectively after the source electrode of the 4th power MOSFET links to each other.
3. total power MOSFET power factor corrector according to claim 2, it is characterized in that, described filter circuit comprises: ac capacitor, one end of this ac capacitor respectively with the live wire of single phase poaer supply and rectification circuit in the source electrode of first power MOSFET link to each other with the mid point of first brachium pontis of the formation of the drain electrode of the 3rd MOSFET, the source electrode of second power MOSFET links to each other with the mid point of second brachium pontis of the formation of the drain electrode of the 4th MOSFET in the other end of ac capacitor and the zero line of single phase poaer supply, the rectification circuit.
4. total power MOSFET power factor corrector according to claim 2, it is characterized in that, described booster circuit comprises: a boost inductance, two power MOSFETs, electrochemical capacitor and resistance, wherein: an end of first boost inductance respectively with rectification circuit in the negative electrode of first power diode and second power diode, one end of the drain electrode of first power MOSFET and first resistance links to each other, the other end of first boost inductance links to each other with drain electrode of the 3rd power MOSFET and the 4th power MOSFET source electrode, the 4th power MOSFET drain electrode links to each other with the anode of first electrochemical capacitor and an end of load resistance respectively, the 3rd power MOSFET source electrode respectively with the other end of second resistance, ground connection after the negative electrode of first electrochemical capacitor and the other end of load resistance link to each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202888202U CN201726310U (en) | 2010-08-11 | 2010-08-11 | Total power MOSFET power factor corrector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202888202U CN201726310U (en) | 2010-08-11 | 2010-08-11 | Total power MOSFET power factor corrector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201726310U true CN201726310U (en) | 2011-01-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202888202U Expired - Fee Related CN201726310U (en) | 2010-08-11 | 2010-08-11 | Total power MOSFET power factor corrector |
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|---|---|
| CN (1) | CN201726310U (en) |
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2010
- 2010-08-11 CN CN2010202888202U patent/CN201726310U/en not_active Expired - Fee Related
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110126 Termination date: 20110811 |