CN101976940A - Drive bootstrap circuit for switching tube of switching power supply converter - Google Patents
Drive bootstrap circuit for switching tube of switching power supply converter Download PDFInfo
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- CN101976940A CN101976940A CN 201010503031 CN201010503031A CN101976940A CN 101976940 A CN101976940 A CN 101976940A CN 201010503031 CN201010503031 CN 201010503031 CN 201010503031 A CN201010503031 A CN 201010503031A CN 101976940 A CN101976940 A CN 101976940A
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Abstract
The invention discloses a drive bootstrap circuit for a switching tube of a switching power supply converter, belonging to the filed of semiconductor technology, and comprising a bootstrap capacitor, a low-voltage CMOS inverter, three high-voltage CMOS inverters, an MOS tube voltage switching mechanism and a switch breakover mechanism. The device further improves the grid control voltage of a power tube so as to reduce the breakover resistance of a power switching tube from the aspect of circuit structure.
Description
Technical field
What the present invention relates to is a kind of device of technical field of semiconductors, specifically is that a kind of switch power converter switching tube drives boostrap circuit.
Background technology
Being accompanied by portable is the electronic product requirements of saving energy, and the technical difficulty of the heat radiation of portable type electronic product, has proposed efficient requirement in the more and more higher requirement, particularly voltage transitions process for wherein power management chip.Wherein the extensive use of Switching Power Supply management has adapted to the energy-efficient requirement of this contemporary consumer electronics just, has broken through the bottleneck of the low and management that can't realize boosting of efficient that the linear power supply management can't break through.Even the change of powder source management mode has realized a most important lifting of step of efficient, and changed the boost mode of heaviness of management employing transformer of power supply with the mode of integrated circuit.But in the Switching Power Supply management mode, the power loss that must bring in the switching process of power switch pipe.Reduce the power loss of power switch pipe, become the topmost way that improves Switching Power Supply management system efficient.For this requirement, on integrated circuit technology, exploitation has the anti-more high-tension power tube of littler Rdson, in order further to promote efficient, comprises that the encapsulation Bonding line in the encapsulation process also adopts the more metal wire of low-resistivity.The another one important method is that the optimization by circuit structure improves, and realizes the more more circuit structure of small size of high efficiency.
Find that through retrieval adopted the better power tube of performance in the existing Switching Power Supply management system, the power consumption that lowers reference circuit and control circuit is raised the efficiency to prior art.But the power consumption on the power switch pipe still is the pith of the power loss of entire circuit system.Be mainly reflected in the improvement of technology for the optimised power consumption of power switch pipe.As Fig. 1 is the control circuit of traditional power switch pipe, in this traditional circuit, just simply uses the CMOS inverter to accept conducting and the shutoff that modulation signal comes the power controlling switching tube.In Fig. 1,4 grades of inverter 101 direct driving N type power switch pipe 102 and P type power switch pipes 103, insert inductance 104 at N type power switch pipe 102 and P type power switch pipe 103 drain terminals, electric capacity of voltage regulation 105 is connected between inductance 104 and the ground, resistance 106 and resistance 107 series connection dividing potential drop outputs, form feedback voltage, 108 are load.
Last power switch pipe 103 as Fig. 1 adopts the PMOS power tube, is lower than source voltage owing to grid voltage when the PMOS power switch pipe is worked, so be easy to realize.Yet also there is the shortcoming that is difficult to overcome the PMOS transistor in itself: because the transistorized mobility of PMOS approximately has only 1/3rd of NMOS, if both | V
GS-V
T| identical with conduction loss, the size of PMOS power switch pipe will take quite a few chip area much larger than the NMOS power switch pipe.If power switch pipe is selected NMOS for use, because grid voltage will be higher than source voltage and just can make the work of NMOS power tube, minimum pressure reduction is threshold voltage V at least
TSo use the NMOS power tube, just must utilize extra drive circuit, improve operating voltage of grid.The bootstrapping drive circuit that the present invention proposes can be effectively increases the grid voltage of NMOS power tube doubly, makes the NMOS power switch pipe be operated in linear zone.Higher grid voltage can be applied to down the NMOS power switch pipe simultaneously, improves the efficient of nmos switch pipe down simultaneously.
Summary of the invention
The present invention is directed to the prior art above shortcomings, provide a kind of switch power converter switching tube to drive boostrap circuit, further reduce the conducting resistance of power switch pipe from the grid-control voltage of circuit structure raising power tube.
The present invention is achieved by the following technical solutions, the present invention includes: bootstrap capacitor, a low voltage CMOS inverter, three high-voltage CMOS inverters, metal-oxide-semiconductor voltage conversion mechanism and switch conduction mechanisms, wherein:
The input of described low voltage CMOS inverter links to each other with the input power supply, the output of low voltage CMOS inverter is in series with metal-oxide-semiconductor voltage conversion mechanism and three high-voltage CMOS inverters successively, link to each other with the positive terminal of switch conduction mechanism after the positive terminal parallel connection of metal-oxide-semiconductor voltage conversion mechanism and three high-voltage CMOS inverters, the output of the first high-voltage CMOS inverter and the second high-voltage CMOS inverter links to each other with the input of switch conduction mechanism respectively, the two ends of bootstrap capacitor link to each other with the output of switch conduction mechanism respectively and receive the high pressure square wave, and the output of the 3rd high-voltage CMOS inverter is the output of described boostrap circuit.
The described first high-voltage CMOS inverter is made of the metal-oxide-semiconductor inverter of two series connection, and the positive terminal of this metal-oxide-semiconductor inverter links to each other negative pole end ground connection with the positive terminal of metal-oxide-semiconductor voltage conversion mechanism and with the positive terminal of switch conduction mechanism;
Described second high-voltage CMOS inverter and the 3rd high-voltage CMOS inverter constitute by single metal-oxide-semiconductor inverter, and the positive terminal of metal-oxide-semiconductor inverter links to each other negative pole end ground connection with the positive terminal of metal-oxide-semiconductor voltage conversion mechanism and with the positive terminal of switch conduction mechanism;
The voltage amplifier circuit that described metal-oxide-semiconductor voltage conversion mechanism is made up of four high-voltage MOS pipes, its input is connected with the low voltage CMOS inverter, will amplify twice through the supply voltage after anti-phase.
When the conducting of high pressure NMOS pipe, the high voltage PMOS pipe that joins is with it closed, when the high pressure NMOS pipe is closed, and the high voltage PMOS pipe conducting of joining with it.
The charging of described bootstrap capacitor and bootstrapping produce the voltage of two times of supply voltages, give the power supply of high-voltage CMOS inverter, produce the square wave of two times of supply voltage amplitudes, the driving power switching tube.
Description of drawings
Fig. 1 is conventional power switching tube drive circuit figure.
Fig. 2 is a structural representation of the present invention.
The output of Fig. 3 after for voltage of the present invention bootstrapping.
Embodiment
Below embodiments of the invention are elaborated, present embodiment is being to implement under the prerequisite with the technical solution of the present invention, provided detailed execution mode and concrete operating process, but protection scope of the present invention is not limited to following embodiment.
As shown in Figure 2, present embodiment comprises: 201, three high-voltage CMOS inverters of 211, one low voltage CMOS inverters of a bootstrap capacitor 202,212,123, and metal-oxide-semiconductor voltage conversion mechanism 214, and a switch conduction mechanism 215, wherein:
The input of described low voltage CMOS inverter 201 links to each other with the input power supply, the output of low voltage CMOS inverter 201 links to each other with metal-oxide-semiconductor voltage conversion mechanism 214 successively, and three high-voltage CMOS inverters 202,212,123 are in series, metal-oxide-semiconductor voltage conversion mechanism 215 and three high-voltage CMOS inverters 202,212, link to each other with the drain electrode end of switch conduction mechanism 208 after 123 the positive terminal parallel connection, the defeated input of the first high-voltage CMOS inverter, 202 outputs and the second high-voltage CMOS inverter 212 links to each other with the gate terminal of switch conduction mechanism 207, the two ends of bootstrap capacitor 211 respectively with switch conduction mechanism 207,208,209,210 output links to each other and forms the high pressure square wave, and the output of the 3rd high-voltage CMOS inverter 213 is the output of described boostrap circuit.
The described first high-voltage CMOS inverter 202 is made of the metal-oxide-semiconductor inverter of two series connection, and the positive terminal of this metal-oxide-semiconductor inverter links to each other negative pole end ground connection with the positive terminal of metal-oxide-semiconductor voltage conversion mechanism 214 and with the positive terminal of switch conduction mechanism 215;
Described second high-voltage CMOS inverter 212 and the 3rd high-voltage CMOS inverter 213 constitute by single metal-oxide-semiconductor inverter, the positive terminal of metal-oxide-semiconductor inverter links to each other negative pole end ground connection with the positive terminal of metal-oxide-semiconductor voltage conversion mechanism 214 and with the positive terminal of switch conduction mechanism 215;
The voltage amplifier circuit that described metal-oxide-semiconductor voltage conversion mechanism 214 is made up of four high-voltage MOS pipes 203,204,205,206, its input is connected with low voltage CMOS inverter 201, will amplify twice through the supply voltage after anti-phase.
Described switch conduction mechanism comprises that 215 comprise that two PMOS pipes 207,208 and NMOS pipe 209,210 form, and PMOS pipe 207,208 joins with the anode of bootstrap capacitor 211, NMOS manage 209,210 and the negative terminal of bootstrap capacitor 211 join.
The specification requirement of described bootstrap capacitor 211 is a thick-oxide dielectric capacitance that can tolerate 10V.
This device carries out work in the following manner:
When input signal is the high signal of low pressure, high pressure NMOS transistor 203 grids are the high signal of low pressure, 203 conductings, and high pressure NMOS transistor 204 grid voltages are opposite, are 0 current potential, 204 turn-off.203 drain electrodes are 0 current potential, and 204 drain electrodes are for high potential, and this high potential is the source potential of high voltage PMOS transistor 205,206, and this current potential is that the bootstrap capacitor two times of supply voltages (VDD) of booting are arranged.So 203～206,202,212,213 adopt high-voltage MOS transistor.At this moment to manage 206 drain potential be two times of supply voltages for NMOS pipe 204, PMOS, still is two times of supply voltages through the buffer afterpotential that is made of 2 CMOS inverters.Again through behind 212 inverters, PMOS transistor 208 grid potentials are 0 current potential, NMOS pipe 209 and 208 conductings simultaneously of PMOS pipe, and PMOS manage 207 grid potentials be high pressure high potential (two times of supply voltages) and NMOS to manage 210 grid potentials be 0 current potential, 207 and 210 all turn-off.The charge stored bootstrapping produces two times of supply voltages in the electric capacity 211.
When input signal Vin is 0 current potential low signal, at this moment with above-mentioned opposite, after signal advances the overpotential transformational structure, i.e. it also is 0 current potential that NMOS pipe 204 drain electrodes, PMOS manage 206 drain potential, still is 0 current potential through the buffer afterpotential that is made of 2 CMOS inverters.Through behind 212 inverters, nmos pass transistor 210 grid potentials are two times of supply voltages again, NMOS pipe 210 and 207 conductings simultaneously of PMOS pipe.And PMOS manage 208 grid potentials be high pressure high potential (two times of supply voltages) and NMOS to manage 209 grid potentials be 0 current potential, 208 and 209 all turn-off.The charge stored of charging in the electric capacity 211.So when input signal low pressure just replaces, just bootstrapping of energy control capacitance 211 current potentials and charging storage hocket, because the load of electric capacity 211 is current potential transformational structure and these underloads of CMOS inverter, so the capacitance of electric capacity 211 does not need the very big voltage bootstrapping that just can well realize.
Fig. 3 is that the low pressure rectangular signal passes through apparatus of the present invention, has obtained the high pressure bootstrapping signal of logical phase place, and it is two times that voltage increases.
Claims (4)
1. a switch power converter switching tube drives boostrap circuit, and comprising: bootstrap capacitor, a low voltage CMOS inverter, three high-voltage CMOS inverters, metal-oxide-semiconductor voltage conversion mechanism and switch conduction mechanisms is characterized in that:
The input of described low voltage CMOS inverter links to each other with the input power supply, the output of low voltage CMOS inverter is in series with metal-oxide-semiconductor voltage conversion mechanism and three high-voltage CMOS inverters successively, link to each other with the positive terminal of switch conduction mechanism after the positive terminal parallel connection of metal-oxide-semiconductor voltage conversion mechanism and three high-voltage CMOS inverters, the output of the first high-voltage CMOS inverter and the second high-voltage CMOS inverter links to each other with the input of switch conduction mechanism respectively, the two ends of bootstrap capacitor link to each other with the output of switch conduction mechanism respectively and receive the high pressure square wave, and the output of the 3rd high-voltage CMOS inverter is the output of described boostrap circuit.
2. switch power converter switching tube according to claim 1 drives boostrap circuit, it is characterized in that, the described first high-voltage CMOS inverter is made of the metal-oxide-semiconductor inverter of two series connection, the positive terminal of this metal-oxide-semiconductor inverter links to each other negative pole end ground connection with the positive terminal of metal-oxide-semiconductor voltage conversion mechanism and with the positive terminal of switch conduction mechanism.
3. switch power converter switching tube according to claim 1 drives boostrap circuit, it is characterized in that, described second high-voltage CMOS inverter and the 3rd high-voltage CMOS inverter constitute by single metal-oxide-semiconductor inverter, the positive terminal of metal-oxide-semiconductor inverter links to each other negative pole end ground connection with the positive terminal of metal-oxide-semiconductor voltage conversion mechanism and with the positive terminal of switch conduction mechanism.
4. switch power converter switching tube according to claim 1 drives boostrap circuit, it is characterized in that, the voltage amplifier circuit that described metal-oxide-semiconductor voltage conversion mechanism is made up of four high-voltage MOS pipes, its input is connected with the low voltage CMOS inverter, will amplify twice through the supply voltage after anti-phase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201010503031 CN101976940A (en) | 2010-10-12 | 2010-10-12 | Drive bootstrap circuit for switching tube of switching power supply converter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201010503031 CN101976940A (en) | 2010-10-12 | 2010-10-12 | Drive bootstrap circuit for switching tube of switching power supply converter |
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| CN101976940A true CN101976940A (en) | 2011-02-16 |
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| CN 201010503031 Pending CN101976940A (en) | 2010-10-12 | 2010-10-12 | Drive bootstrap circuit for switching tube of switching power supply converter |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270984A (en) * | 2011-07-01 | 2011-12-07 | 清华大学 | Positive high voltage level conversion circuit |
| CN102340305A (en) * | 2011-07-13 | 2012-02-01 | 清华大学 | Positive high-voltage level-shifting circuit suitable for low power supply voltage |
| CN103703685A (en) * | 2011-06-07 | 2014-04-02 | 密克罗奇普技术公司 | Distributed bootstrap switch |
| CN103795401A (en) * | 2014-02-18 | 2014-05-14 | 南通大学 | Output unit circuit with controllable output level |
| CN104935154A (en) * | 2015-07-10 | 2015-09-23 | 灿瑞半导体(上海)有限公司 | Bootstrap circuit of step-down converter |
| CN108809061A (en) * | 2018-06-15 | 2018-11-13 | 电子科技大学 | Switch MOS bootstrap charge circuit circuits suitable for the driving of high speed GaN power device grid |
| CN108809063A (en) * | 2018-06-15 | 2018-11-13 | 电子科技大学 | A kind of driving boostrap circuit of full Embedded |
| CN110585605A (en) * | 2019-10-10 | 2019-12-20 | 中国人民解放军第四军医大学 | Laser therapeutic instrument |
| CN112636586A (en) * | 2020-11-12 | 2021-04-09 | 北京无线电测量研究所 | N-type switching tube power supply conversion circuit |
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| CN1197332A (en) * | 1997-04-22 | 1998-10-28 | Lg半导体株式会社 | Input/output voltage detection type substrate voltage generation circuit |
| US20050156844A1 (en) * | 2003-12-26 | 2005-07-21 | Casio Computer Co., Ltd. | Semiconductor circuit |
| US20060103429A1 (en) * | 2004-11-17 | 2006-05-18 | Nec Corporation | Bootstrap circuit and driving method thereof |
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Patent Citations (3)
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| CN1197332A (en) * | 1997-04-22 | 1998-10-28 | Lg半导体株式会社 | Input/output voltage detection type substrate voltage generation circuit |
| US20050156844A1 (en) * | 2003-12-26 | 2005-07-21 | Casio Computer Co., Ltd. | Semiconductor circuit |
| US20060103429A1 (en) * | 2004-11-17 | 2006-05-18 | Nec Corporation | Bootstrap circuit and driving method thereof |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103703685A (en) * | 2011-06-07 | 2014-04-02 | 密克罗奇普技术公司 | Distributed bootstrap switch |
| CN102270984A (en) * | 2011-07-01 | 2011-12-07 | 清华大学 | Positive high voltage level conversion circuit |
| CN102340305A (en) * | 2011-07-13 | 2012-02-01 | 清华大学 | Positive high-voltage level-shifting circuit suitable for low power supply voltage |
| CN102340305B (en) * | 2011-07-13 | 2013-10-16 | 清华大学 | Positive high-voltage level-shifting circuit suitable for low power supply voltage |
| CN103795401A (en) * | 2014-02-18 | 2014-05-14 | 南通大学 | Output unit circuit with controllable output level |
| CN104935154A (en) * | 2015-07-10 | 2015-09-23 | 灿瑞半导体(上海)有限公司 | Bootstrap circuit of step-down converter |
| CN104935154B (en) * | 2015-07-10 | 2017-06-27 | 上海灿瑞科技股份有限公司 | A kind of boostrap circuit of step-down converter |
| CN108809061A (en) * | 2018-06-15 | 2018-11-13 | 电子科技大学 | Switch MOS bootstrap charge circuit circuits suitable for the driving of high speed GaN power device grid |
| CN108809063A (en) * | 2018-06-15 | 2018-11-13 | 电子科技大学 | A kind of driving boostrap circuit of full Embedded |
| CN110585605A (en) * | 2019-10-10 | 2019-12-20 | 中国人民解放军第四军医大学 | Laser therapeutic instrument |
| CN112636586A (en) * | 2020-11-12 | 2021-04-09 | 北京无线电测量研究所 | N-type switching tube power supply conversion circuit |
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Application publication date: 20110216 |