CN103956897A

CN103956897A - Power-consumption control circuit, intelligent power module and variable-frequency household appliance

Info

Publication number: CN103956897A
Application number: CN201410038991.2A
Authority: CN
Inventors: 冯宇翔
Original assignee: Guangdong Midea Refrigeration Equipment Co Ltd
Current assignee: GD Midea Air Conditioning Equipment Co Ltd
Priority date: 2014-01-26
Filing date: 2014-01-26
Publication date: 2014-07-30
Anticipated expiration: 2034-01-26
Also published as: CN103956897B

Abstract

The invention provides a power-consumption control circuit which includes a low-power-consumption switching element which is connected in parallel to any IGBT in an intelligent power module so as to form a switching assembly; a frequency detection module which is used for detecting the work frequency of the intelligent power module; switchover control modules which are used for enabling the any IGBT or simultaneously enabling the any IGBT tube and the low-power-consumption switching element to be in a work state under a condition that a first signal is received and only enabling the low-power-consumption switching element to be in a work state under a condition that a second signal is received. The invention also proposes the intelligent power module and a variable-frequency household appliance. Through the technical scheme, different on-off devices can be adopted at different work frequencies so that the power consumption of the intelligent power module can be reduced and a risk of breakdown of the on-off devices by overcurrent does not exist.

Description

Power control circuit and Intelligent Power Module, frequency-conversion domestic electric appliances

Technical field

The present invention relates to power consumption control technical field, in particular to a kind of power control circuit, a kind of Intelligent Power Module and a kind of frequency-conversion domestic electric appliances.

Background technology

Intelligent Power Module, i.e. IPM(Intelligent Power Module), be a kind of by the power drive series products of power electronics and integrated circuit technique combination.Intelligent Power Module integrates device for power switching and high-voltage driving circuit, and in keep overvoltage, overcurrent and the failure detector circuit such as overheated.Intelligent Power Module receives the control signal of MCU on the one hand, drives subsequent conditioning circuit work, sends the state detection signal of system back to MCU on the other hand.Compare with traditional discrete scheme, Intelligent Power Module wins increasing market with advantages such as its high integration, high reliability, being particularly suitable for frequency converter and the various inverter of drive motors, is a kind of desirable power electronic device that is applied to frequency control, metallurgical machinery, electric traction, servo-drive, frequency-conversion domestic electric appliances.

In correlation technique, the circuit structure of Intelligent Power Module 100 as shown in Figure 1:

The VCC end of HVIC pipe 1000 is as the low-pressure area power supply anode VDD of Intelligent Power Module 100, and VDD is generally 15V; Meanwhile, at described HVIC, managing 1000 inside has boostrap circuit, and boostrap circuit structure is as follows:

VCC end is connected with the low-pressure area power supply anode of UH drive circuit 101, VH drive circuit 102, WH drive circuit 103, UL drive circuit 104, VL drive circuit 105, WL drive circuit 106.

The HIN1 end of described HVIC pipe 1000 is gone up brachium pontis input UHIN mutually as the U of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described UH drive circuit 101 at described HVIC; The HIN2 end of described HVIC pipe 1000 is gone up brachium pontis input VHIN mutually as the V of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described VH drive circuit 102 at described HVIC; The HIN3 end of described HVIC pipe 1000 is gone up brachium pontis input WHIN mutually as the W of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described WH drive circuit 103 at described HVIC.

The LIN1 end of described HVIC pipe 1000 descends brachium pontis input ULIN mutually as the U of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described UL drive circuit 104 at described HVIC; The LIN2 end of described HVIC pipe 1000 descends brachium pontis input VLIN mutually as the V of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described VL drive circuit 105 at described HVIC; The LIN3 end of described HVIC pipe 1000 descends brachium pontis input WLIN mutually as the W of described Intelligent Power Module 100, manages 1000 inside be connected with the input of described WL drive circuit 106 at described HVIC; At this, the U of described Intelligent Power Module 100, V, the input of W three-phase Liu road receive the input signal of 0V or 5V.

The GND of described HVIC pipe 1000 holds the low-pressure area power supply negative terminal COM as described Intelligent Power Module 100, and is connected with the low-pressure area power supply negative terminal of described UH drive circuit 101, described VH drive circuit 102, described WH drive circuit 103, described UL drive circuit 104, described VL drive circuit 105, described WL drive circuit 106.

The VB1 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply anode of described UH drive circuit 101, in the outside one end that connect electric capacity 131 of described HVIC pipe 1000, and as the U phase higher-pressure region power supply anode UVB of described Intelligent Power Module 100; The HO1 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the output of described UH drive circuit 101, manages 1000 outsides be connected with the grid that U goes up brachium pontis IGBT pipe 121 mutually at described HVIC; The VS1 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply negative terminal of described UH drive circuit 101, the collector electrode of brachium pontis IGBT pipe 124, FRD manage 114 negative electrode, the other end of described electric capacity 131 is connected, anode, the U of FRD pipe 111 descend mutually at described HVIC, to manage the emitter-base bandgap grading of 1000 outsides and described IGBT pipe 121, and as the U phase higher-pressure region power supply negative terminal UVS of described Intelligent Power Module 100.

The VB2 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply anode of described VH drive circuit 102, in the outside one end that connects electric capacity 132 of described HVIC pipe 1000, as the U phase higher-pressure region power supply anode VVB of described Intelligent Power Module 100; The HO2 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the output of described VH drive circuit 102, manages 1000 outsides be connected with the grid that V goes up brachium pontis IGBT pipe 123 mutually at described HVIC; The VS2 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply negative terminal of described VH drive circuit 102, the collector electrode of brachium pontis IGBT pipe 125, FRD manage 115 negative electrode, the other end of described electric capacity 132 is connected, anode, the V of FRD pipe 112 descend mutually at described HVIC, to manage the emitter-base bandgap grading of 1000 outsides and described IGBT pipe 122, and as the W phase higher-pressure region power supply negative terminal VVS of described Intelligent Power Module 100.

The VB3 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply anode of described WH drive circuit 103, in the outside one end that connects electric capacity 133 of described HVIC pipe 1000, as the W phase higher-pressure region power supply anode WVB of described Intelligent Power Module 100; The HO3 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the output of described WH drive circuit 101, manages 1000 outsides be connected with the grid that W goes up brachium pontis IGBT pipe 123 mutually at described HVIC; The VS3 end of described HVIC pipe 1000 is managed 1000 inside at described HVIC and is connected with the higher-pressure region power supply negative terminal of described WH drive circuit 103, the collector electrode of brachium pontis IGBT pipe 126, FRD manage 116 negative electrode, the other end of described electric capacity 133 is connected, anode, the W of FRD pipe 113 descend mutually at described HVIC, to manage the emitter-base bandgap grading of 1000 outsides and described IGBT pipe 123, and as the W phase higher-pressure region power supply negative terminal WVS of described Intelligent Power Module 100.

The LO1 end of described HVIC pipe 1000 is connected with the grid of described IGBT pipe 124; The LO2 end of described HVIC pipe 1000 is connected with the grid of described IGBT pipe 125; The LO3 end of described HVIC pipe 1000 is connected with the grid of described IGBT pipe 126.

The emitter-base bandgap grading of described IGBT pipe 124 is connected with the anode of described FRD pipe 114, and as the U phase low reference voltage end UN of described Intelligent Power Module 100; The emitter-base bandgap grading of described IGBT pipe 125 is connected with the anode of described FRD pipe 115, and as the V phase low reference voltage end VN of described Intelligent Power Module 100; The emitter-base bandgap grading of described IGBT pipe 126 is connected with the anode of described FRD pipe 116, and as the W phase low reference voltage end WN of described Intelligent Power Module 100.

The negative electrode of the collector electrode of the negative electrode of the collector electrode of the negative electrode of the collector electrode of described IGBT pipe 121, described FRD pipe 111, described IGBT pipe 122, described FRD pipe 112, described IGBT pipe 123, described FRD pipe 113 is connected, and as the high voltage input P of described Intelligent Power Module 100, P generally meets 300V.

The effect of described HVIC pipe 1000 is:

VDD is the power supply anode of described HVIC pipe 1000, and GND is the power supply negative terminal (VDD-GND voltage is generally 15V) of described HVIC pipe 1000.VB1 and VS1 are respectively positive pole and the negative pole of the power supply of U phase higher-pressure region, and HO1 is the output of U phase higher-pressure region; VB2 and VS2 are respectively positive pole and the negative pole of the power supply of V phase higher-pressure region, and HO2 is the output of V phase higher-pressure region; VB3 and VS3 are respectively positive pole and the negative pole of the power supply of U phase higher-pressure region, and HO3 is the output of W phase higher-pressure region; LO1, LO2, LO3 are respectively the output of U phase, V phase, W phase low-pressure area.

The logic input signal of 0 or the 5V of input HIN1, HIN2, HIN3 and LIN1, LIN2, LIN3 is passed to respectively to output HO1, HO2, HO3 and LO1, LO2, LO3, wherein, HO1 is that logic output signal, the HO2 of VS1 or VS1+15V is that logic output signal, the HO3 of VS2 or VS2+15V is the logic output signal of VS3 or VS3+15V, and LO1, LO2, LO3 are 0 or the logic output signal of 15V.

Meanwhile, the input signal of same phase can not be high level simultaneously, and HIN1 and LIN1, HIN2 and LIN2, HIN3 and LIN3 can not be high level simultaneously.

A kind of preferred circuit during described Intelligent Power Module 100 real work is as shown in Figure 2:

Between UVB and UVS, external capacitor 135; Between VVB and VVS, external capacitor 136; Between WVB and WVS, external capacitor 137.At this, described electric capacity 133,132,131 mainly strobes, and described electric capacity 135,136,137 mainly plays storing electricity effect.

UN, VN, WN are connected, and the Pin7 of one end of contact resistance 138 and MCU pipe 200; Another termination COM of described resistance 138.

The Pin1 of described MCU200 is connected with the UHIN end of described Intelligent Power Module 100; The Pin2 of described MCU200 is connected with the VHIN end of described Intelligent Power Module 100; The Pin3 of described MCU200 is connected with the WHIN end of described Intelligent Power Module 100; The Pin4 of described MCU200 is connected with the ULIN end of described Intelligent Power Module 100; The Pin5 of described MCU200 is connected with the VLIN end of described Intelligent Power Module 100; The Pin6 of described MCU200 is connected with the WLIN end of described Intelligent Power Module 100.

The U of take illustrates the operating state of Intelligent Power Module 100 mutually as example:

1, when the pin Pin4 of described MCU200 sends high level signal, the pin Pin1 of described MCU200 must send low level signal, it is that high level, HIN1 are low level that signal makes LIN1, at this moment, LO1 exports high level and HO1 output low level, described IGBT pipe 121 cut-offs thereby described IGBT manages 124 conductings, VS1 voltage is about 0V; VCC is to 135 chargings of described electric capacity 133 and described electric capacity, when time long enough or make described electric capacity 133 and 135 chargings of described electric capacity before dump energy when abundant, VB1 obtains the voltage that approaches 15V to VS1.

2, when the pin Pin1 of described MCU200 sends high level signal, the pin Pin4 of described MCU200 must send low level signal, it is low level that signal makes LIN1, HIN1 is high level, at this moment, LO1 output low level and HO1 output high level, thereby described IGBT pipe 124 cut-offs and described IGBT manages 121 conductings, thereby VS1 voltage is about 300V, VB1 voltage is lifted to 315V left and right, by the electric weight of described electric capacity 133 and described electric capacity 135, maintain the work of U phase higher-pressure region, if the duration that HIN1 is high level, enough electric weight short or described electric capacity 133 and 135 storages of described electric capacity was abundant, VB1 is more than to VS1, the voltage in the course of work of U phase higher-pressure region can remain on 14V.

In practical application, particularly, in the application of convertible frequency air-conditioner, MCU200 can adopt different algorithms to control the break-make of Intelligent Power Module 100 according to environmental change, and frequency-changeable compressor is operated under different frequencies:

When Intelligent Power Module 100 break-makes are very fast, compressor operating is under high frequency, and at this moment, six pieces of IGBT pipes of Intelligent Power Module 100 inside (as IGBT pipe 121 to IGBT pipes 126) need to flow through larger electric current; When Intelligent Power Module 100 break-makes are when slower, compressor operating is under low frequency, and at this moment, six pieces of IGBT pipes of Intelligent Power Module 100 inside flow through less electric current.

State for compressor low frequency operation, wish to obtain often low-power consumption, and while using IGBT pipe as on-off element, due to the smearing of IGBT pipe, cause the switching loss of on-off element can not be very low, thereby make the loss of Intelligent Power Module 100 also can not do very lowly.

If use the metal-oxide-semiconductor without smearing to substitute IGBT pipe, when compressor low frequency operation, really can reduce break-make loss and system power dissipation, but the restriction due to metal-oxide-semiconductor current capacity, when compressor enters high-frequency work state, excessive electric current can exceed the current range that metal-oxide-semiconductor can bear and cause metal-oxide-semiconductor overcurrent to burn, and when serious, also can cause fire.

In correlation technique, the low frequency operation loss that reduces Intelligent Power Module by improving the smearing of IGBT pipe realizes, but this special process makes the production cost of IGBT pipe very high, is not suitable for promoting at civil areas such as convertible frequency air-conditioners.

Therefore, how to reduce the loss of Intelligent Power Module when low frequency operation, and the overcurrent risk while avoiding high-frequency work, and production cost is applicable to civil area, becomes technical problem urgently to be resolved hurrily at present.

Summary of the invention

The present invention is intended at least solve one of technical problem existing in prior art or correlation technique.

For this reason, one object of the present invention is to have proposed a kind of power control circuit.

Another object of the present invention is to have proposed a kind of Intelligent Power Module.

Another object of the present invention is to have proposed a kind of frequency-conversion domestic electric appliances.

For achieving the above object, embodiment according to a first aspect of the invention, has proposed a kind of power control circuit, comprising: low-power consumption switch element, is connected in parallel to the arbitrary IGBT pipe in Intelligent Power Module, to form switch module; Frequency detection module, is connected to described Intelligent Power Module, for detection of the operating frequency of described Intelligent Power Module, and in the situation that described operating frequency is high frequency, exports first signal, in the situation that described operating frequency is low frequency, exports secondary signal; Switching controls module, be connected to described switch module and described frequency detection module, for in the situation that receiving described first signal, only make described arbitrary IGBT pipe or make described arbitrary IGBT pipe simultaneously and described low-power consumption switch element in running order, and in the situation that receiving described secondary signal, only make described low-power consumption switch element in running order.

In this technical scheme, by making low-power consumption switch element and IGBT pipe formation in parallel switch module, and only make low-power consumption switch element in running order in Intelligent Power Module during in low frequency, thereby can avoid the smearing of IGBT pipe and cause unnecessary working loss, contribute to reduce the overall power of Intelligent Power Module.

Meanwhile, by, making IGBT pipe in running order, thereby avoid low-power consumption switch element to be punctured by overcurrent during in high frequency in Intelligent Power Module, contribute to guarantee the fail safe of intelligent power consumption module.

Wherein, low-power consumption switch element is specifically as follows metal-oxide-semiconductor, such as NMOS pipe etc., thereby can either bear the current strength of Intelligent Power Module under low frequency operation state, effectively reduces break-make loss and system loss again owing to not having smearing.

In addition, power control circuit according to the above embodiment of the present invention, can also have following additional technical characterictic:

According to one embodiment of present invention, preferably, described frequency detection module comprises: parameter sampling circuit, be connected to described switch module, and for the circuit characteristic parameter to described switch module, sample; Parameter comparison circuit, is connected to described parameter sampling circuit, judges that described operating frequency is as high frequency, otherwise judge that described operating frequency is as low frequency while being greater than preset parameter value for the numerical value of circuit characteristic parameter in sampling.

In this technical scheme, by the operating state of Intelligent Power Module is carried out to direct-detection, can accurately judge the current residing operating frequency of Intelligent Power Module, for controlling the operating state that enters of IGBT pipe and/or low-power consumption switch element, guarantee that under low frequency, only making low-power consumption switch element enter under operating state, high frequency must make IGBT pipe enter operating state.

Wherein, the circuit characteristic parameter of switch module can have a lot, while changing such as operating frequency when Intelligent Power Module, may directly cause curent change (operating current under high frequency is large, the operating current under low frequency less), thereby can directly to electric current, sample; Certainly, it will be understood by those skilled in the art that obviously also can be by the sampling of other parameters is realized to the identification to operating frequency, such as can be by the voltage difference producing on certain power consumption element is sampled.

According to one embodiment of present invention, preferably, if described switching controls module only makes described arbitrary IGBT pipe in running order in the situation that receiving described first signal, described switching controls module comprises: switching circuit, be connected to described frequency detection module and signal source, for conducting in the situation that receiving described first signal, so that described source ground, and disconnect in the situation that receiving described secondary signal, so that described signal source exports state control circuit to; Described state control circuit, the control end of described on-off control circuit is connected between described signal source and described switching circuit, for the in the situation that of described switching circuit conducting, control described arbitrary IGBT pipe in running order, and the in the situation that of described switching circuit cut-off, control described low-power consumption switch element in running order.

In this technical scheme, by switching circuit is set, the operating frequency of Intelligent Power Module is changed to the input signal variation that is reflected into state control circuit, thereby can accurately control the operating state of IGBT pipe and low-power consumption switch element.

A preferred embodiment of the invention, described state control circuit comprises: analog switch, described analog switch comprises: control piece, be connected between described signal source and described switching circuit, the in the situation that of described switching circuit conducting, generate the first switching signal, in the situation that described switching circuit disconnects, generate the second switching signal; Be subject to control, the described one end of control that is subject to is connected to the signal input part that described switch module is corresponding, described in be subject to the other end of control in the situation that receiving described the first switching signal, to be connected to the first drive circuit, in the situation that receiving described the second switching signal, be connected to the second drive circuit; Wherein, described the first drive circuit for described arbitrary IGBT pipe is driven, described the second drive circuit is for driving described low-power consumption switch element.

In this technical scheme, can adopt respectively independently drive circuit to realize the driving to IGBT pipe and low-power consumption switch element, thereby can by signal input part with control the first drive circuit or being connected of the second drive circuit, thereby guarantee when Intelligent Power Module is under different operating frequency, can accurately switch to corresponding drive circuit, to drive IGBT pipe or low-power consumption switch element to enter operating state.

When IGBT pipe and low-power consumption switch element adopt independently drive circuit, due to the required driving voltage of low-power consumption switch element and electric current less (with respect to IGBT pipe), thereby the driving force of corresponding the second drive circuit can be less, inner the size of driving element also can be less, thereby contribute to dwindle the area occupied of the second drive circuit, reduce the production cost of Intelligent Power Module.

According to another kind of preferred implementation of the present invention, described state control circuit comprises: analog switch, described analog switch comprises: control piece, be connected between described signal source and described switching circuit, the in the situation that of described switching circuit conducting, generate the 3rd switching signal, in the situation that described switching circuit disconnects, generate the 4th switching signal; Be subject to control, described one end that is subject to control is connected to one end of drive circuit, described in be subject to the other end of control in the situation that receiving described the 3rd switching signal, to be connected to described arbitrary IGBT pipe, in the situation that receiving described the 4th switching signal, to be connected to described low-power consumption switch element; Wherein, the other end of described drive circuit is connected to the signal input part that described switch module is corresponding, for described arbitrary IGBT pipe or described low-power consumption switch element are driven.

In this technical scheme, IGBT pipe and low-power consumption switch element also can adopt same one drive circuit to drive, can be by IGBT pipe or low-power consumption switch element be controlled with being connected of this drive circuit, thereby guarantee when Intelligent Power Module is under different operating frequency, can accurately switch to corresponding break-make device, to drive IGBT pipe or low-power consumption switch element to enter operating state.

According to another embodiment of the invention, preferably, if described switching controls module makes described arbitrary IGBT manage in the situation that receiving described first signal and described low-power consumption switch element is in running order simultaneously, described switching controls module comprises: voltage follower circuit, be connected to described frequency detection module and signal source, for export the first voltage in the situation that receiving described first signal, and in the situation that receiving described secondary signal, export second voltage; State control circuit, be connected to described voltage follower circuit, for at described the first voltage in the first number range in the situation that, control described arbitrary IGBT pipe and described low-power consumption switch element in running order, and in the situation that described second voltage is within the scope of second value, control described low-power consumption switch element in running order; Wherein, described the first number range refers to and is greater than the first predeterminated voltage value, and described second value scope refers to and is greater than the second predeterminated voltage value and is less than or equal to described the first predeterminated voltage value.

In this technical scheme, by the regulation and control to output voltage, be under high frequency, (to receive first signal) to export (receiving secondary signal) output second voltage under the first voltage, low frequency, the operating frequency of Intelligent Power Module can be changed to the numerical value change that is reflected into output voltage,, in conjunction with to the residing number range judgement of output voltage, can accurately control the operating state of IGBT pipe and low-power consumption switch element.

A preferred embodiment of the invention, described voltage follower circuit comprises: the first resistance and the second resistance, described the first resistance and described the second resistance are connected between signal source and ground successively; Switching device and the 3rd resistance, after described switching device is connected with described the 3rd resistance, be parallel to the two ends of described the second resistance, described switching device is also connected to described frequency detection module, for conducting in the situation that receiving described first signal, and end in the situation that receiving described secondary signal.

In this technical scheme, by conducting or the cut-off of control switch device, the operating state of the 3rd resistance is changed, i.e. during switching device conducting, after the second resistance and the 3rd resistance parallel connection, be series at the first resistance; And switching device when cut-off only connected by the first resistance and the second resistance, thereby the numerical value of controlling output voltage changes.

A preferred embodiment of the invention, described state control circuit comprises: the first voltage comparator, the first input end of described the first voltage comparator is connected to common port, second input of described the first resistance and described the second resistance and inputs described the first predeterminated voltage value, for at described the first voltage in the first number range in the situation that, output the first enabling signal; Second voltage comparator, the first input end of described second voltage comparator is connected to common port, second input of described the first resistance and described the second resistance and inputs described the second predeterminated voltage value, for at described second voltage in second value scope in the situation that, output the second enabling signal; The first logical circuit, output, the second input that the first input end of described the first logical circuit is connected to described the first voltage comparator are connected to signal input part, the output that described switch module is corresponding and are connected to the first drive circuit, for in the situation that receiving described the first enabling signal, export the signal from described signal input part to described the first drive circuit; The second logical circuit, output, the second input that the first input end of described the second logical circuit is connected to described second voltage comparator is connected to described signal input part, output is connected to the second drive circuit, for in the situation that receiving described the second enabling signal, export the signal from described signal input part to described the second drive circuit; Wherein, described the first drive circuit for described arbitrary IGBT pipe is driven, described the second drive circuit is for driving described low-power consumption switch element.

In this technical scheme, can adopt respectively independently drive circuit to realize the driving to IGBT pipe and low-power consumption switch element, thereby can control whether export the signal of signal input part to the first drive circuit or the second drive circuit, thereby guarantee when Intelligent Power Module is under different operating frequency, can export the signal of signal input part to corresponding drive circuit exactly, to drive IGBT pipe or low-power consumption switch element to enter operating state.

Similarly, when IGBT pipe and low-power consumption switch element adopt independently drive circuit, due to the required driving voltage of low-power consumption switch element and electric current less (with respect to IGBT pipe), thereby the driving force of corresponding the second drive circuit can be less, inner the size of driving element also can be less, thereby contribute to dwindle the area occupied of the second drive circuit, reduce the production cost of Intelligent Power Module.

In above-mentioned arbitrary technical scheme, preferably, also comprise: time judgment module, be connected to described switching controls module, for being greater than default very first time threshold value in the duration that receives described first signal, or the duration that receives described secondary signal be greater than in the situation of the second default time threshold, allow described switching controls module according to described first signal or described secondary signal, to control the operating state of described switch module, otherwise do not allow.

In this technical scheme, Intelligent Power Module is when detecting the operating state of self, by the judgement to the duration, can guarantee that Intelligent Power Module has realized corresponding switching really, thereby the erroneous judgement of avoiding instantaneous circuit characteristic variation (such as instantaneous overvoltage or overcurrent) to cause is disconnected, contribute to promote the accuracy of judgement and the fail safe in use procedure.

According to one embodiment of present invention, preferably, described time judgment module comprises: inverter, be connected to described switching controls module, and for described first signal or described secondary signal that described switching controls module is transmitted, carry out anti-phase processing; Energy storage device, the anodic bonding of described energy storage device is to input and the described switching controls module of described inverter, for in the situation that described switching controls module receives low level described first signal or described secondary signal, storage is from the electric energy of particular signal source, and be greater than default very first time threshold value in the situation that receive the duration of described first signal, to described inverter input high level signal; Power consumption device, be connected to described energy storage device and described switching controls module, be used in the situation that described switching controls module receives described first signal or the described secondary signal of high level, consume the electric energy of described energy storage device storage, and in the situation that the duration of described secondary signal be greater than the second default time threshold, to described inverter input low level signal.

In this technical scheme, by application energy storage device, make the time-continuing process of first signal or secondary signal can accurately be reflected into energy storage device to the storage of electric energy or dispose procedure, and only after electric energy raises or is reduced to certain threshold value, be just reflected as level variation just.Meanwhile, the logic based in practical application changes, and can add more inverter, to realize correct logic control.

Wherein, should to the model of energy storage device and power consumption device, choose in advance, so that energy storage device can be after the time span through very first time threshold value, by low level, being raise is high level, and after the time span through the second time threshold, by high level, be reduced to low level.

According to the embodiment of second aspect present invention, a kind of Intelligent Power Module has been proposed, comprise the power control circuit as described in any one in technique scheme.

According to the embodiment of third aspect present invention, a kind of frequency-conversion domestic electric appliances has been proposed, comprise the Intelligent Power Module as described in technique scheme, such as convertible frequency air-conditioner, frequency conversion refrigerator, variable-frequency washing machine etc.

By above technical scheme, can under different operating frequencies, adopt different break-make devices, thereby contribute to reduce the power consumption of Intelligent Power Module, and the risk that can not exist break-make device to be punctured by overcurrent.

Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.

Accompanying drawing explanation

Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination obviously and is easily understood becoming the description of embodiment, wherein:

Fig. 1 shows the structural representation of the Intelligent Power Module in correlation technique;

Fig. 2 show in correlation technique Intelligent Power Module is carried out to sequencing control time structural representation;

Fig. 3 A shows the structural representation of power control circuit according to an embodiment of the invention;

Fig. 3 B shows the structural representation of power control circuit according to another embodiment of the invention;

Fig. 3 C shows the structural representation of power control circuit according to still another embodiment of the invention;

Fig. 4 shows the schematic diagram of the operating frequency of detection Intelligent Power Module according to an embodiment of the invention;

Fig. 5 shows the concrete structure schematic diagram of power control circuit according to an embodiment of the invention;

Fig. 6 A is the structural representation of a kind of embodiment embodiment illustrated in fig. 5;

Fig. 6 B is the structural representation of another kind of embodiment embodiment illustrated in fig. 5;

Fig. 6 C is the structural representation of the Intelligent Power Module of correspondence embodiment illustrated in fig. 5;

Fig. 7 shows the concrete structure schematic diagram of power control circuit according to another embodiment of the invention;

Fig. 8 is the structural representation of a kind of embodiment embodiment illustrated in fig. 7;

Fig. 9 A is the structural representation of the Intelligent Power Module of correspondence embodiment illustrated in fig. 7;

Fig. 9 B is the structural representation of the output gating circuit in the Intelligent Power Module shown in Fig. 9 A.

Embodiment

In order more clearly to understand above-mentioned purpose of the present invention, feature and advantage, below in conjunction with the drawings and specific embodiments, the present invention is further described in detail.It should be noted that, in the situation that not conflicting, the application's embodiment and the feature in embodiment can combine mutually.

A lot of details have been set forth in the following description so that fully understand the present invention; but; the present invention can also adopt other to be different from other modes described here and implement, and therefore, protection scope of the present invention is not limited to the restriction of following public specific embodiment.

One, overall structure

In correlation technique, Intelligent Power Module all adopts IGBT pipe as break-make device, but on the one hand, the smearing of IGBT pipe causes the switching loss under its low frequency too high, on the other hand, if directly use low-power consumption switch element, because the electric current under high frequency is excessive, easily damage low-power consumption switch element, even the unsafe condition such as initiation fire.

Therefore,, in order to solve many-sided problems such as switching loss and overcurrent risk, Fig. 3 A shows the structural representation of power control circuit according to an embodiment of the invention.

As shown in Figure 3A, power control circuit according to an embodiment of the invention, comprise: low-power consumption switch element 111 ', be connected in parallel to the arbitrary IGBT pipe (Fig. 3 A is depicted as IGBT pipe 121) in Intelligent Power Module (than Intelligent Power Module 100 as shown in Figure 1), to form switch module (specifically not indicating in figure); Frequency detection module 304, be connected to described Intelligent Power Module, for detection of the operating frequency of described Intelligent Power Module, and in the situation that described operating frequency is high frequency, export first signal, in the situation that described operating frequency is low frequency, export secondary signal; Switching controls module 306, be connected to described switch module and described frequency detection module 304, for in the situation that receiving described first signal, only make described arbitrary IGBT pipe or make described arbitrary IGBT pipe simultaneously and described low-power consumption switch element 111 ' in running order, and in the situation that receiving described secondary signal, only make described low-power consumption switch element 111 ' in running order.

In this technical scheme, by making low-power consumption switch element 111 ' and IGBT pipe formation in parallel switch module, and only make low-power consumption switch element 111 ' in running order in Intelligent Power Module during in low frequency, thereby can avoid the smearing of IGBT pipe and cause unnecessary working loss, contribute to reduce the overall power of Intelligent Power Module.

Meanwhile, by, making IGBT pipe in running order, thereby avoid low-power consumption switch element 111 ' to be punctured by overcurrent during in high frequency in Intelligent Power Module, contribute to guarantee the fail safe of intelligent power consumption module.

Wherein, low-power consumption switch element 111 ' is specifically as follows metal-oxide-semiconductor, such as NMOS pipe etc., thereby can either bear the current strength of Intelligent Power Module under low frequency operation state, effectively reduces break-make loss and system loss again owing to not having smearing.

In Fig. 3 A, the IGBT pipe 121 that the U of specifically take as shown in Figure 1 goes up brachium pontis is mutually illustrated as example; But in fact, obviously IGBT pipe 122, the IGBT pipe 123 that can go up mutually brachium pontis to the V phase in Intelligent Power Module, W carry out identical power consumption control, can also descend mutually IGBT pipe 124, IGBT pipe 125 and the IGBT of brachium pontis to manage 126 to U phase, V phase and W and carry out identical power consumption control.

Below in conjunction with Fig. 3 B, the U of still take is example mutually, and the syndeton of lower brachium pontis is elaborated.Wherein, Fig. 3 B shows the structural representation of power control circuit according to another embodiment of the invention.

As shown in Figure 3 B, in another embodiment of the present invention, also can descend mutually the IGBT pipe 124 of brachium pontis to carry out power consumption control for U.Particularly, low-power consumption switch element 114 ' can be connected in parallel to IGBT and manage 124 two ends, thereby form a switch module (specifically not indicating in figure) by IGBT pipe 124 and low-power consumption switch element 114 '.

Based on said structure, operating frequency by 304 pairs of above-mentioned switch modules of frequency detection module detects on the one hand, the operating frequency being detected by switching controls module 306 bases on the other hand, control IGBT pipe 124 and low-power consumption switch element 114 ' and whether enter operating state, if enter operating state, the signal of being inputted by port LIN1 carries out break-make control.

In Fig. 3 A and Fig. 3 B, for the ease of independent explanation, all show frequency detection module 304 and switching controls module 306; In fact, in order to simplify circuit, to improve synchronism, also can between different I GBT pipe, adopt same frequency detection module 304.

Fig. 3 C shows the structural representation of power control circuit according to still another embodiment of the invention.

As shown in Figure 3 C, power control circuit according to still another embodiment of the invention, the U of still take is example mutually, suppose by switching controls module 306A to the IGBT pipe 121 of upper brachium pontis and low-power consumption switch element 111 ' are carried out power consumption control, by switching controls module 306B, IGBT pipe 124 and the low-power consumption switch element 114 ' of lower brachium pontis carried out to power consumption control, only by frequency detection module 304, provide corresponding operating frequency testing result for switching controls module 306A and switching controls module 306B simultaneously.

User or manufacturer can be according to the actual requirements, the number of frequency detection module 304 and connected mode are selected, such as the corresponding frequency detection module 304 independently of each IGBT pipe, or every corresponding frequency detection module 304 independently, or all IGBT pipe corresponding same frequency detection module 304 all.

Two, frequency detection module

According to one embodiment of present invention, preferably, described frequency detection module 304 comprises: parameter sampling circuit, be connected to described switch module, and for the circuit characteristic parameter to described switch module, sample; Parameter comparison circuit, is connected to described parameter sampling circuit, judges that described operating frequency is as high frequency, otherwise judge that described operating frequency is as low frequency while being greater than preset parameter value for the numerical value of circuit characteristic parameter in sampling.

Particularly, Fig. 4 shows the schematic diagram of the operating frequency of detection Intelligent Power Module according to an embodiment of the invention.

As shown in Figure 4, in Intelligent Power Module 4100 according to an embodiment of the invention, the power positive end VCC end of output gating circuit 4400 is as the low-pressure area power supply anode VDD of described Intelligent Power Module 4100, and VDD is generally 15V.

The first input end HIN1 of described output gating circuit 4400 goes up brachium pontis input UHIN mutually as the U of described Intelligent Power Module 4100; The second input HIN2 of described output gating circuit 4400 goes up brachium pontis input VHIN mutually as the V of described Intelligent Power Module 4100; The 3rd input HIN3 of described output gating circuit 4400 goes up brachium pontis input WHIN mutually as the W of described Intelligent Power Module 4100; The four-input terminal LIN1 of described output gating circuit 4400 descends brachium pontis input ULIN mutually as the U of described Intelligent Power Module 4100; The 5th input LIN2 of described output gating circuit 4400 descends brachium pontis input VLIN mutually as the V of described Intelligent Power Module 4100; The 6th input LIN3 of described output gating circuit 4400 descends brachium pontis input WLIN mutually as the W of described Intelligent Power Module 4100.

Simultaneously, the 7th output ITRIP of described output gating circuit 4400 is connected with the W phase low reference voltage end WN of the V phase low reference voltage end VN of the U phase low reference voltage end UN of described output gating circuit 4400, described output gating circuit 4400, described output gating circuit 4400, one end of sampling resistor 4301, and as the abnormal feedback end ISO of described Intelligent Power Module 4100.

The power supply negative terminal GND of described output gating circuit 4400 is connected with the other end of described sampling resistor 4301, and as the minimum voltage reference point N of described Intelligent Power Module 4100.

The U phase higher-pressure region power supply anode VB1 of described output gating circuit 4400 is connected with one end of electric capacity 4133, and as the U phase higher-pressure region power supply anode UVB of described Intelligent Power Module 4100; The U phase higher-pressure region power supply negative terminal VS1 of described output gating circuit 4400 is connected with the other end of described electric capacity 4133, and as the U phase higher-pressure region power supply negative terminal UVS of described Intelligent Power Module 4100.

The V phase higher-pressure region power supply anode VB2 of described output gating circuit 4400 is connected with one end of electric capacity 4132, and as the V phase higher-pressure region power supply anode VVB of described Intelligent Power Module 4100; The V phase higher-pressure region power supply negative terminal VS2 of described output gating circuit 4400 is connected with the other end of described electric capacity 4132, and as the V phase higher-pressure region power supply negative terminal VVS of described Intelligent Power Module 4100.

The W phase higher-pressure region power supply anode VB3 of described output gating circuit 4400 is connected with one end of electric capacity 4131, and as the W phase higher-pressure region power supply anode WVB of described Intelligent Power Module 4100; The W phase higher-pressure region power supply negative terminal VS3 of described output gating circuit 4400 is connected with the other end of described electric capacity 4131, and as the W phase higher-pressure region power supply negative terminal WVS of described Intelligent Power Module 4100.

The maximum voltage reference end P of described output gating circuit 4400 is as the maximum voltage reference point P of described Intelligent Power Module 4100.

In the structure shown in Fig. 4, take the concrete structure of sampling resistor 4301 as parameter sampling circuit, the operating frequency of Intelligent Power Module 4100 is converted to the voltage drop numerical value on sampling resistor 4301, and compares and judge by inputing to parameter comparison circuit after ITRIP port processing.

Certainly, what those skilled in the art should understand that is, obviously also can be by the sampling of other parameters be realized to the identification to operating frequency, here the voltage sample of only take describes as example, and the circuit characteristic parameter of switch module can have a lot, while changing such as operating frequency when Intelligent Power Module, may directly cause curent change (operating current under high frequency is large, the operating current under low frequency less), thereby can also directly to electric current, sample.

Three, switching controls module

Embodiment mono-: switching controls module 306 only makes described arbitrary IGBT pipe in running order in the situation that receiving described first signal.

(1) module composition

According to one embodiment of present invention, preferably, switching controls module 306 as shown in Figure 3A can comprise: switching circuit, be connected to described frequency detection module and signal source, for conducting in the situation that receiving described first signal, so that described source ground, and disconnect in the situation that receiving described secondary signal, so that described signal source exports state control circuit to; Described state control circuit, the control end of described on-off control circuit is connected between described signal source and described switching circuit, for the in the situation that of described switching circuit conducting, control described arbitrary IGBT pipe in running order, and the in the situation that of described switching circuit cut-off, control described low-power consumption switch element in running order.

(2) circuit structure

Corresponding to the Intelligent Power Module shown in Fig. 4, Fig. 5 shows the concrete structure schematic diagram of power control circuit according to an embodiment of the invention.

As shown in Figure 5, in power control circuit according to an embodiment of the invention, above-mentioned frequency detection module 304 specifically consists of voltage comparator 4502, the positive input terminal of this voltage comparator 4502 receives the sampled voltage from the ITRIP port shown in Fig. 4, the predeterminated voltage value of negative input end receiver voltage source input, and the switching controls module 306 that comparative result input is consisted of switching circuit 3062 and state control circuit 3064.

Particularly, switching circuit 3062 can be the metal-oxide-semiconductor shown in Fig. 5, and its grid is connected to the output of voltage comparator 4502.When Intelligent Power Module 4100 is during in high frequency, the positive input terminal voltage of voltage comparator 4502, higher than negative input end voltage, makes voltage comparator 4502 output high level, metal-oxide-semiconductor 3062 conductings; When Intelligent Power Module 4100 is during in low frequency, the positive input terminal voltage of voltage comparator 4502, lower than negative input end voltage, makes voltage comparator 4502 output low levels, metal-oxide-semiconductor 3062 cut-offs.

When metal-oxide-semiconductor 3062 conducting, will be connected to the current signal source ground connection of VCC end, state control circuit 3064 is input as 0V; When metal-oxide-semiconductor 3062 cut-off, the direct input state control circuit 3064 in above-mentioned current signal source.

For state control circuit 3064, its concrete structure also may have multiple situation, is elaborated respectively below.

Execution mode one

Fig. 6 A is the structural representation of a kind of embodiment embodiment illustrated in fig. 5.

As shown in Figure 6A, a preferred embodiment of the invention, described state control circuit 3064 comprises: analog switch, described analog switch comprises: control piece, be connected between described signal source (than current signal described above source) and described switching circuit 3062, the in the situation that of described switching circuit 3062 conducting, generate the first switching signal, in the situation that described switching circuit 3062 disconnects, generate the second switching signal; Be subject to control, the described one end of control that is subject to is connected to the signal input part that described switch module is corresponding, described in be subject to the other end of control in the situation that receiving described the first switching signal, to be connected to the first drive circuit 4409, in the situation that receiving described the second switching signal, be connected to the second drive circuit 4410; Wherein, described the first drive circuit 4409 for described arbitrary IGBT pipe 4121 is driven, described the second drive circuit 4410 is for driving described low-power consumption switch element 4111.

In this technical scheme, can adopt respectively independently drive circuit to realize the driving to IGBT pipe 4121 and low-power consumption switch element 4111, thereby can by signal input part HIN1 with control the first drive circuit 4409 or the second being connected of drive circuit 4410, thereby guarantee when Intelligent Power Module 4100 is under different operating frequency, can accurately switch to corresponding drive circuit, to drive IGBT pipe 4121 or low-power consumption switch element 4111 to enter operating state.

When IGBT pipe 4121 and low-power consumption switch element 4111 adopt independently drive circuit, due to the required driving voltage of low-power consumption switch element 4111 and electric current less (with respect to IGBT pipe 4121), thereby the driving force of corresponding the second drive circuit 4410 can be less, inner the size of driving element also can be less, thereby contribute to dwindle the area occupied of the second drive circuit 4410, reduce the production cost of Intelligent Power Module 4100.

Execution mode two

Fig. 6 B is the structural representation of another kind of embodiment embodiment illustrated in fig. 5.

As shown in Figure 6B, according to another kind of preferred implementation of the present invention, described state control circuit 3064 comprises: analog switch, described analog switch comprises: control piece, be connected between described signal source (than current signal described above source) and described switching circuit 3062, the in the situation that of described switching circuit 3062 conducting, generate the 3rd switching signal, in the situation that described switching circuit 3062 disconnects, generate the 4th switching signal; Be subject to control, described one end that is subject to control is connected to one end of drive circuit 4409 ', described in be subject to the other end of control in the situation that receiving described the 3rd switching signal, to be connected to described arbitrary IGBT pipe 4121, in the situation that receiving described the 4th switching signal, to be connected to described low-power consumption switch element 4111; Wherein, the other end of described drive circuit 4409 ' is connected to the signal input part that described switch module is corresponding (HIN1 port as shown in Figure 6B), for described arbitrary IGBT pipe 4121 or described low-power consumption switch element 4111 are driven.

In this technical scheme, IGBT pipe 4121 and low-power consumption switch element 4111 also can adopt same one drive circuit 4409 ' to drive, can be by the control that is connected with this drive circuit 4409 ' to IGBT pipe 4121 or low-power consumption switch element 4111, thereby guarantee when Intelligent Power Module 4100 is under different operating frequency, can accurately switch to corresponding break-make device, to drive IGBT pipe 4121 or low-power consumption switch element 4111 to enter operating state.

(3) integrated circuit structure

Fig. 6 C is the structural representation of the Intelligent Power Module of correspondence embodiment illustrated in fig. 5.

As shown in Figure 6 C, can adopt execution mode as shown in Figure 6A for each the IGBT pipe in Intelligent Power Module 4100, realize power consumption control; Certainly, it will be understood by those skilled in the art that and adopt the execution mode shown in Fig. 6 A only for illustrating here, obviously can adopt other either types, ratio execution modes as shown in Figure 6B etc., can be used in the power consumption control realizing Intelligent Power Module 4100 equally.

Particularly, the structure of the output gating circuit 4400 in the Intelligent Power Module shown in Fig. 6 C 4100 can be:

The anode of voltage source 4401 is connected with the negative terminal of voltage comparator 4402, the anode of described voltage comparator 4402 is connected with the ITRIP end of described output gating circuit 4400, the output of described voltage comparator 4402 is connected with the grid of NMOS pipe 4404, the substrate of described NMOS pipe 4404 is connected with source electrode and is connected to one end of resistance 4406, the drain electrode of described NMOS pipe 4404 and the anode of current source 4403, one end of electric capacity 4405, the input of not gate 4407 is connected, the negative terminal of described current source 4403 connects the VCC end of described output gating circuit 4400, the other end of described resistance 4406 is connected with the other end of described electric capacity 4405 and is connected to GND end, the output of described not gate 4407 is as the control end of analog switch 4408, the stiff end of described analog switch 4408 is connected with the HIN1 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4408 is connected with the input of UH drive circuit 4409, the low level gating end of described analog switch 4408 is connected with the input of UH drive circuit 4410, the low-pressure area power supply anode of described UH drive circuit 4409 and described UH drive circuit 4410 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described UH drive circuit 4409 and described UH drive circuit 4410 is connected with the GND of described output gating circuit 4400 end, the higher-pressure region power supply anode of described UH drive circuit 4409 and described UH drive circuit 4410 is connected with the VB1 of described output gating circuit 4400 end, the higher-pressure region power supply negative terminal of described UH drive circuit 4409 and described UH drive circuit 4410 is connected with the VS1 of described output gating circuit 4400 end, the output of described UH drive circuit 4409 is connected with the UHO1 end of described output gating circuit 4400, the output of described UH drive circuit 4410 is connected with the UHO2 end of described output gating circuit 4400.

The anode of voltage source 4501 is connected with the negative terminal of voltage comparator 4502, the anode of described voltage comparator 4502 is connected with the ITRIP end of described output gating circuit 4400, the output of described voltage comparator 4502 is connected with the grid of NMOS pipe 4504, the substrate of the described NMOS pipe 4504 also one end of connecting resistance 4506 that is connected with source electrode, the drain electrode of described NMOS pipe 4504 and the anode of current source 4503, one end of electric capacity 4505, the input of not gate 4507 is connected, the negative terminal of described current source 4503 connects the VCC end of described output gating circuit 4400, the other end of described resistance 4506 is connected with the other end of described electric capacity 4505 and connects the GND end of described output gating circuit 4400, the output of described not gate 4507 is as the control end of analog switch 4508, the stiff end of described analog switch 4508 is connected with the HIN2 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4508 is connected with the input of VH drive circuit 4509, the low level gating end of described analog switch 4508 is connected with the input of VH drive circuit 4510, the low-pressure area power supply anode of described VH drive circuit 4509 and described VH drive circuit 4510 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described VH drive circuit 4509 and described VH drive circuit 4510 is connected with the GND of described output gating circuit 4400 end, the higher-pressure region power supply anode of described VH drive circuit 4509 and described VH drive circuit 4510 is connected with the VB2 of described output gating circuit 4400 end, the higher-pressure region power supply negative terminal of described VH drive circuit 4509 and described VH drive circuit 4510 is connected with the VS2 of described output gating circuit 4400 end, the output of described VH drive circuit 4509 is connected with the VHO1 end of described output gating circuit 4400, the output of described VH drive circuit 4510 is connected with the VHO2 end of described output gating circuit 4400.

The anode of voltage source 4601 is connected with the negative terminal of voltage comparator 4602, the anode of described voltage comparator 4602 is connected with the ITRIP end of described output gating circuit 4400, the output of described voltage comparator 4602 is connected with the grid of NMOS pipe 4604, the substrate of the described NMOS pipe 4604 also one end of connecting resistance 4606 that is connected with source electrode, the drain electrode of described NMOS pipe 4604 and the anode of current source 4603, one end of electric capacity 4605, the input of not gate 4607 is connected, the negative terminal of described current source 4603 connects the VCC end of described output gating circuit 4400, the other end of described resistance 4606 is connected with the other end of described electric capacity 4605 and connects the GND end of described output gating circuit 4400, the output of described not gate 4607 is as the control end of analog switch 4608, the stiff end of described analog switch 4508 is connected with the HIN3 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4608 is connected with the input of WH drive circuit 4609, the low level gating end of described analog switch 4608 is connected with the input of WH drive circuit 4610, the low-pressure area power supply anode of described WH drive circuit 4609 and described WH drive circuit 4610 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described WH drive circuit 4609 and described WH drive circuit 4610 is connected with the GND of described output gating circuit 4400 end, the higher-pressure region power supply anode of described WH drive circuit 4609 and described VH drive circuit 4610 is connected with the VB3 of described output gating circuit 4400 end, the higher-pressure region power supply negative terminal of described WH drive circuit 4609 and described WH drive circuit 4610 is connected with the VS3 of described output gating circuit 4400 end, the output of described WH drive circuit 4609 is connected with the WHO1 end of described output gating circuit 4400, the output of described WH drive circuit 4610 is connected with the WHO2 end of described output gating circuit 4400.

The anode of voltage source 4701 is connected with the negative terminal of voltage comparator 4702, the anode of described voltage comparator 4702 is connected with the ITRIP end of described output gating circuit 4400, the output of described voltage comparator 4702 is connected with the grid of NMOS pipe 4704, the substrate of the described NMOS pipe 4704 also one end of connecting resistance 4706 that is connected with source electrode, the drain electrode of described NMOS pipe 4704 and the anode of current source 4703, one end of electric capacity 4705, the input of not gate 4707 is connected, the negative terminal of described current source 4703 connects the VCC end of described output gating circuit 4400, the other end of described resistance 4706 is connected with the other end of described electric capacity 4705 and connects the GND end of described output gating circuit 4400, the output of described not gate 4707 is as the control end of analog switch 4708, the stiff end of described analog switch 4708 is connected with the LIN1 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4708 is connected with the input of UL drive circuit 4709, the low level gating end of described analog switch 4708 is connected with the input of UL drive circuit 4710, the low-pressure area power supply anode of described UL drive circuit 4709 and described UL drive circuit 4710 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described UL drive circuit 14709 and described UL drive circuit 24710 is connected with the GND of described output gating circuit 4400 end, the output of described UL drive circuit 14709 is connected with the ULO1 end of described output gating circuit 4400, the output of described UL drive circuit 24710 is connected with the ULO2 end of described output gating circuit 4400.

The anode of voltage source 4801 is connected with the negative terminal of voltage comparator 4802, the anode of described voltage comparator 4802 is connected with the ITRIP end of described output gating circuit 4400, the output of described voltage comparator 4802 is connected with the grid of NMOS pipe 4804, the substrate of the described NMOS pipe 4804 also one end of connecting resistance 4806 that is connected with source electrode, the drain electrode of described NMOS pipe 4804 and the anode of current source 4803, one end of electric capacity 4805, the input of not gate 4807 is connected, the negative terminal of described current source 4803 connects the VCC end of described output gating circuit 4400, the other end of described resistance 4806 is connected with the other end of described electric capacity 4805 and connects the GND end of described output gating circuit 4400, the output of described not gate 4807 is as the control end of analog switch 4808, the stiff end of described analog switch 4808 is connected with the LIN2 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4808 is connected with the input of VL drive circuit 4809, the low level gating end of described analog switch 4808 is connected with the input of VL drive circuit 4810, the low-pressure area power supply anode of described VL drive circuit 4809 and described VL drive circuit 4810 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described VL drive circuit 4809 and described VL drive circuit 4810 is connected with the GND of described output gating circuit 4400 end, the output of described VL drive circuit 4809 is connected with the VLO1 end of described output gating circuit 4400, the output of described VL drive circuit 4810 is connected with the VLO2 end of described output gating circuit 4400.

The anode of voltage source 4901 is connected with the negative terminal of voltage comparator 4902, the anode of described voltage comparator 4902 is connected with the ITRIP end of described output gating circuit 4400, the output of described voltage comparator 4902 is connected with the grid of NMOS pipe 4904, the substrate of the described NMOS pipe 4904 also one end of connecting resistance 4906 that is connected with source electrode, the drain electrode of described NMOS pipe 4904 and the anode of current source 4903, one end of electric capacity 4905, the input of not gate 4807 is connected, the negative terminal of described current source 4903 connects the VCC end of described output gating circuit 4400, the other end of described resistance 4906 is connected with the other end of described electric capacity 4905 and connects the GND end of described output gating circuit 4400, the output of described not gate 4907 is as the control end of analog switch 4908, the stiff end of described analog switch 4908 is connected with the LIN3 end of described output gating circuit 4400, the high-level strobe end of described analog switch 4908 is connected with the input of WL drive circuit 4909, the low level gating end of described analog switch 4808 is connected with the input of WL drive circuit 4910, the low-pressure area power supply anode of described WL drive circuit 4909 and described WL drive circuit 4910 is connected with the VCC of described output gating circuit 4400 end, the low-pressure area power supply negative terminal of described WL drive circuit 4909 and described WL drive circuit 4910 is connected with the GND of described output gating circuit 4400 end, the output of described WL drive circuit 4909 is connected with the WLO1 end of described output gating circuit 4400, the output of described WL drive circuit 4910 is connected with the WLO2 end of described output gating circuit 4400.

Described UHO1 end is connected with the grid of IGBT pipe 4121, and described UHO2 end is connected with the grid of NMOS pipe 4111; The collector electrode of described IGBT pipe 4121 is connected with the drain electrode of described high pressure NMOS pipe 4111 and connects the P end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4121 is connected with source electrode with the substrate of described high pressure NMOS pipe 4111 and the VS1 that connects described output gating circuit 4400 holds; Described VHO1 end is connected with the grid of IGBT pipe 4122, and described VHO2 end is connected with the grid of NMOS pipe 4112; The collector electrode of described IGBT pipe 4122 is connected with the drain electrode of described high pressure NMOS pipe 4112 and connects the P end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4122 is connected with source electrode with the substrate of described high pressure NMOS pipe 4112 and the VS2 that connects described output gating circuit 4400 holds; Described WHO1 end is connected with the grid of IGBT pipe 4123, and described WHO2 end is connected with the grid of NMOS pipe 4113; The collector electrode of described IGBT pipe 4123 is connected with the drain electrode of described high pressure NMOS pipe 4113 and connects the P end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4123 is connected with source electrode with the substrate of described high pressure NMOS pipe 4113 and the VS3 that connects described output gating circuit 4400 holds.

Described ULO1 end is connected with the grid of IGBT pipe 4124, and described ULO2 end is connected with the grid of NMOS pipe 4114; The collector electrode of described IGBT pipe 4124 is connected with the drain electrode of described high pressure NMOS pipe 4114 and connects the VS1 end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4124 is connected with source electrode with the substrate of described high pressure NMOS pipe 4114 and the UN that connects described output gating circuit 4400 holds; Described VLO1 end is connected with the grid of IGBT pipe 4125, and described VLO2 end is connected with the grid of NMOS pipe 4115; The collector electrode of described IGBT pipe 4125 is connected with the drain electrode of described high pressure NMOS pipe 4115 and connects the VS2 end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4124 is connected with source electrode with the substrate of described high pressure NMOS pipe 4115 and the VN that connects described output gating circuit 4400 holds; Described WLO1 end is connected with the grid of IGBT pipe 4125, and described WLO2 end is connected with the grid of NMOS pipe 4115; The collector electrode of described IGBT pipe 4125 is connected with the drain electrode of described high pressure NMOS pipe 4115 and connects the VS3 end of described output gating circuit 4400, and the emitter-base bandgap grading of described IGBT pipe 4125 is connected with source electrode with the substrate of described high pressure NMOS pipe 4115 and the WN that connects described output gating circuit 4400 holds.

(4) time judgement

Particularly, in the circuit structure shown in Fig. 6 C, such as go up mutually the IGBT pipe 4121 of brachium pontis for U, show the time judgment module being formed by inverter 4407, electric capacity 4405 and resistance 4406 etc.

So, as a kind of more upper describing mode, preferably, described time judgment module comprises: inverter (inverter 4407 as shown in Figure 6 C), be connected to described switching controls module (switching controls module 306 as shown in Figure 3A), for described first signal or described secondary signal that described switching controls module is transmitted, carry out anti-phase processing; Energy storage device (electric capacity 4405 as shown in Figure 6 C), the anodic bonding of described energy storage device is to input and the described switching controls module of described inverter, for in the situation that described switching controls module receives low level described first signal or described secondary signal, storage is from the electric energy of particular signal source, and be greater than default very first time threshold value in the situation that receive the duration of described first signal, to described inverter input high level signal; Power consumption device (resistance 4406 as shown in Figure 6 C), be connected to described energy storage device and described switching controls module, be used in the situation that described switching controls module receives described first signal or the described secondary signal of high level, consume the electric energy of described energy storage device storage, and in the situation that the duration of described secondary signal be greater than the second default time threshold, to described inverter input low level signal.

(5) operation principle

Because the structure and parameter structure and parameters in full accord, three lower brachium pontis of three upper brachium pontis are in full accord, and upper brachium pontis and lower brachium pontis in full accord in gating principle, thereby take U below and go up mutually brachium pontis as example, illustrate gating principle of the present invention.

On off operating mode regardless of 4121～4126 and six described high pressure NMOS pipes 4111～4116 of six described IGBT pipes, electric current always flows through from described resistance 4301, and produce pressure drop Vt at ITRIP end, thereby can be for the operating frequency of judgement Intelligent Power Module 4100.In addition the pressure drop that, can remember described voltage source 4401 is Vd.

1, when Vt<Vd:

Described voltage comparator 4402 output low levels, described NMOS pipe 4404 cut-offs, described current source 4403 is described electric capacity 4405 chargings, through after a while, the voltage Vc of described electric capacity 4405 is greater than the threshold voltage Vi of described not gate 4407, described not gate 4407 output low levels, described analog switch 4408 gating low-pressure ends, the signal of HIN1 imports described UH drive circuit 4410 into, after described UH drive circuit 4410 is processed, in the output of UHO2 end, control the break-make of described high pressure NMOS pipe 4111.

2, when Vt>Vd:

Described voltage comparator 4402 output high level, described NMOS manages 4404 conductings, described electric capacity 4405 is by described resistance 4406 electric discharges, and through after a while, the voltage Vc of described electric capacity 4405 is less than the threshold voltage Vi of described not gate 4407, described not gate 4407 is exported high level, described analog switch 4408 gating high-pressure sides, the signal of HIN1 imports described UH drive circuit 4409 into, after described UH drive circuit 4409 is processed, in the output of UHO1 end, control the break-make of described IGBT pipe 4121.

By the way, for U, go up mutually the on-off element of brachium pontis and realized: hour, gating switch speed but the less high pressure NMOS pipe of withstanding current capability, to reduce switching loss and system loss for the electric current 1) flowing through at needs; 2), when the electric current that flows through at needs is larger, gating has smearing but the larger IGBT pipe of withstanding current capability, to avoid high pressure NMOS pipe overcurrent to puncture.

(6) parameter setting

The parameter that the following describes each key components is chosen:

For general high pressure NMOS pipe, current capacity is below 5A, and more than general IGBT tube current ability can reach 5A.Therefore, can consider when electric current is less than 5A, gating NMOS pipe, when electric current is greater than 5A, gating IGBT pipe.

The value of described resistance 4301 can be taken as 10m Ω, Vd=50mV.When flowing through the electric current I r<5A of described resistance 4301, the pressure drop Vi<Vd of ITRIP, makes described voltage comparator 4402 output low levels; When flowing through the electric current I r>5A of described resistance 4301, the pressure drop Vi>Vd of ITRIP, makes described voltage comparator 4402 output high level.

1, when described voltage comparator 4402 output low level, described NMOS pipe 4404 turn-offs, described current source 4403 is described electric capacity 4405 chargings, the current value of described current source 4403 can be designed to Id=8 μ A, the resistance of described resistance 4406 can be designed to Rd=1.25k Ω, the capacitance of described electric capacity 4405 can be designed to Cd=1 μ F, and the threshold value that designs described not gate 4407 is 8V:

When described NMOS pipe is during in opening state, the pressure drop of described electric capacity 4405 is identical with the pressure drop of described resistance 4406, pressure drop Vc=Rd * Id=1.25k Ω * 8 μ A=0.01V ≈ 0, thereby have no progeny when described NMOS pipe 4404 closes, the voltage Vc of described electric capacity 4405 and the relation of charging interval tc are about:

V_{C} = \frac{Id \cdot tc}{Cd};

When Vc is charged to Vc=Vi:

Substitution is calculated, and obtains tc=1s, after 1s, the input of described not gate 4407 obtains high level signal, its output output low level, thus make described analog switch 4408 gating low level gating ends, and input signal enters described UH drive circuit 24410 and drives described high pressure NMOS pipe 4111.

2, when described voltage comparator 4402 output high level, it is 4404 open-minded that described NMOS manages, described electric capacity 4405 discharges by described resistance 4406 through described NMOS pipe 4404, the voltage Vc of described electric capacity 4405 mostly is Vcc=15V most, again because described NMOS pipe 4404 is in saturation conduction state, its resistance can be ignored, the voltage of described electric capacity 4405 and discharge time td relation be about:

V_{C} = Vcc \cdot e^{- \frac{td}{Rd \cdot Cd}};

When Vc discharges into Vc=Vi:

Substitution is calculated, and obtains td ≈ 0.8ms, after 0.8ms, the input of described not gate 4407 obtains low level signal, its output output high level, thus make described analog switch 4408 gating high-level strobe ends, and input signal enters described UH drive circuit 14409 and drives described IGBT pipe 4121.

Therefore, when flowing through the electric current of described resistance 4301, be less than 5A and continue after 1s, described Intelligent Power Module 4100 gating high pressure NMOS pipes are as on-off element, when flowing through the electric current of described resistance 4301, be greater than 5A and continue after 0.8ms, described Intelligent Power Module 4100 gating IGBT pipes are as on-off element.

It should be noted that: why from IGBT pipe, being switched to time of high pressure NMOS pipe longer, is because will guarantee that system has entered little current working mode, in order to avoid damage because high pressure NMOS tube current scarce capacity causes Intelligent Power Module; Why from high pressure NMOS pipe, being switched to the time compole of IGBT pipe short, is in order to ensure when system power ability need increases to some extent, and Intelligent Power Module just can provide rapidly current capacity enough on-off elements, and assurance system is normally worked.

Simultaneously, the structure of described UH drive circuit 4409 and described UH drive circuit 4410 can be done in full accordly and be in full accord with prior art, for improving systematic function, consider, also can the under-voltage protection voltage of described UH drive circuit 4410 be done lowlyer than described UH drive circuit 4409, because high pressure NMOS pipe only need to be lower supply power voltage just can guarantee the saturation conduction of device, thereby while making gating high pressure NMOS pipe, Intelligent Power Module can be operated under lower supply power voltage, for falling cost consideration, the size of the driving CMOS of described UH drive circuit 4410 is done littlely than described UH drive circuit 4409, because high pressure NMOS pipe only needs less current capacity just can control its conducting or shutoff, thereby save the area of described UH drive circuit 4410.

Embodiment bis-: switching controls module in the situation that receiving described first signal, make simultaneously described arbitrary IGBT pipe and described low-power consumption switch element in running order.

(1) module composition

Fig. 7 shows the concrete structure schematic diagram of power control circuit according to another embodiment of the invention.

As shown in Figure 7, according to one embodiment of present invention, preferably, switching controls module 306 as shown in Figure 3A can comprise: voltage follower circuit 3062 ', be connected to described frequency detection module (frequency detection module 304 as shown in Figure 3A) and signal source (Figure 7 shows that the current source that is connected to VCC end), for export the first voltage in the situation that receiving described first signal, and in the situation that receiving described secondary signal, export second voltage; State control circuit 3064 ', be connected to described voltage follower circuit 3062 ', for at described the first voltage in the first number range in the situation that, control described arbitrary IGBT pipe 4121 and described low-power consumption switch element 4111 in running order, and in the situation that described second voltage is within the scope of second value, control described low-power consumption switch element 4111 in running order; Wherein, described the first number range refers to and is greater than the first predeterminated voltage value, and described second value scope refers to and is greater than the second predeterminated voltage value and is less than or equal to described the first predeterminated voltage value.

In this technical scheme, by the regulation and control to output voltage, be under high frequency, (to receive first signal) to export (receiving secondary signal) output second voltage under the first voltage, low frequency, the operating frequency of Intelligent Power Module can be changed to the numerical value change that is reflected into output voltage,, in conjunction with to the residing number range judgement of output voltage, can accurately control the operating state of IGBT pipe 4121 and low-power consumption switch element 4111.

(2) circuit structure

Fig. 8 is the structural representation of a kind of embodiment embodiment illustrated in fig. 7.

As shown in Figure 8, a preferred embodiment of the invention, the voltage follower circuit 3062 ' shown in Fig. 7 comprising: the first resistance R 1 and the second resistance R 2, described the first resistance R 1 and described the second resistance R 2 are connected between signal source VCC and ground successively; Switching device 5200 and the 3rd resistance R 3, after described switching device 5200 is connected with described the 3rd resistance R 3, be parallel to the two ends of described the second resistance R 2, described switching device 5200 is also connected to described frequency detection module (consisting of the voltage comparator 4502 shown in figure and unshowned voltage sampling circuit), for conducting in the situation that receiving described first signal, and end in the situation that receiving described secondary signal.

In this technical scheme, by conducting or the cut-off of control switch device 5200, the operating state of the 3rd resistance R 3 is changed, i.e. during switching device 5200 conducting, after the second resistance R 2 and the 3rd resistance R 3 parallel connections, be series at the first resistance R 1; And during switching device 5200 cut-off, only by the first resistance R 1 and the second resistance R 2 series connection, thereby the numerical value of controlling output voltage changes.

A preferred embodiment of the invention, described state control circuit 3064 ' comprising: the first voltage comparator 501, the first input end of described the first voltage comparator 501 (being positive input terminal shown in figure) is connected to common port, second input (being negative input end shown in figure) of described the first resistance R 1 and described the second resistance R 2 and inputs described the first predeterminated voltage value, for at described the first voltage in the first number range in the situation that, output the first enabling signal; Second voltage comparator 502, the first input end of described second voltage comparator 502 (being positive input terminal shown in figure) is connected to common port, second input (being negative input end shown in figure) of described the first resistance R 1 and described the second resistance R 2 and inputs described the second predeterminated voltage value, for at described second voltage in second value scope in the situation that, output the second enabling signal; The first logical circuit 503, output, the second input that the first input end of described the first logical circuit 503 is connected to described the first voltage comparator 501 is connected to the signal input part that described switch module is corresponding (being HIN1 port shown in figure), output is connected to the first drive circuit 4409, for in the situation that receiving described the first enabling signal, export the signal from described signal input part to described the first drive circuit 4409; The second logical circuit 504, output, the second input that the first input end of described the second logical circuit 504 is connected to described second voltage comparator 502 is connected to described signal input part, output is connected to the second drive circuit 4410, for in the situation that receiving described the second enabling signal, export the signal from described signal input part to described the second drive circuit 4410; Wherein, described the first drive circuit 4409 for described arbitrary IGBT pipe 4121 is driven, described the second drive circuit 4410 is for driving described low-power consumption switch element 4111.

In this technical scheme, can adopt respectively independently drive circuit to realize the driving to IGBT pipe 4121 and low-power consumption switch element 4111, thereby can control whether export the signal of signal input part to the first drive circuit 4409 or the second drive circuit 4410, thereby guarantee when Intelligent Power Module is under different operating frequency, can export the signal of signal input part to corresponding drive circuit exactly, to drive IGBT pipe 4121 or low-power consumption switch element 4111 to enter operating state.

Similarly, when IGBT pipe 4121 and low-power consumption switch element 4111 adopt independently drive circuit, due to the required driving voltage of low-power consumption switch element 4111 and electric current less (with respect to IGBT pipe), thereby the driving force of corresponding the second drive circuit 4410 can be less, inner the size of driving element also can be less, thereby contribute to dwindle the area occupied of the second drive circuit 4410, reduce the production cost of Intelligent Power Module.

(3) integrated circuit structure

Fig. 9 A is the structural representation of the Intelligent Power Module of correspondence embodiment illustrated in fig. 7.

As shown in Figure 9 A, suppose that only the lower brachium pontis of the U phase in Intelligent Power Module, V phase, W phase carries out based on power consumption control of the present invention, with the integrated circuit structure of the Intelligent Power Module in embodiments of the invention two, describe.

Certainly, those skilled in the art should understand that: be no matter upper brachium pontis in Intelligent Power Module or the IGBT pipe of any amount in lower brachium pontis, can adopt technical scheme of the present invention, realize effective power consumption control.

So, the structure of the Intelligent Power Module based on shown in Fig. 9 A is as follows:

The power positive end VCC end of output gating circuit 4400 is as the low-pressure area power supply anode VDD of described Intelligent Power Module 4100, and VDD is generally 15V.

The first input end HIN1 of described output gating circuit 4400 goes up brachium pontis input UHIN mutually as the U of described Intelligent Power Module 4100; The second input HIN2 of described output gating circuit 4400 goes up brachium pontis input VHIN mutually as the V of described Intelligent Power Module 4100; The 3rd input HIN3 of described output gating circuit 4400 goes up brachium pontis input WHIN mutually as the W of described Intelligent Power Module 4100; The four-input terminal LIN1 of described output gating circuit 4400 descends brachium pontis input ULIN mutually as the U of described Intelligent Power Module 4100; The 5th input LIN2 of described output gating circuit 4400 descends brachium pontis input VLIN mutually as the V of described Intelligent Power Module 4100; The 6th input LIN3 of described output gating circuit 4400 descends brachium pontis input WLIN mutually as the W of described Intelligent Power Module 4100; The 7th input ITRIP of described output gating circuit 4400 is as the switching signal input ISO of described Intelligent Power Module 4100; The power supply negative terminal GND of described output gating circuit 4400 is as the low-pressure area power supply negative terminal COM of described Intelligent Power Module 4100.

The UHO end of described output gating circuit 4400 is connected with the grid of IGBT pipe 4121, the collector electrode of described IGBT pipe 4121 is connected with the negative electrode of FRD pipe 4111 and connects the ceiling voltage point P end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4121 and described FRD manage that 4111 anode is connected and the UVS that connects described Intelligent Power Module 4100 holds.

The VHO end of described output gating circuit 4400 is connected with the grid of IGBT pipe 4122, the collector electrode of described IGBT pipe 4122 is connected with the negative electrode of FRD pipe 4112 and connects the ceiling voltage point P end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4122 and described FRD manage that 4112 anode is connected and the VVS that connects described Intelligent Power Module 4100 holds.

The WHO end of described output gating circuit 4400 is connected with the grid of IGBT pipe 4123, the collector electrode of described IGBT pipe 4123 is connected with the negative electrode of FRD pipe 4113 and connects the ceiling voltage point P end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4123 and described FRD manage that 4113 anode is connected and the WVS that connects described Intelligent Power Module 4100 holds.

The ULO1 end of described Intelligent Power Module 4100 is connected with the grid of IGBT pipe 4124, and the ULO2 end of described Intelligent Power Module 4100 is connected with the grid of NMOS pipe 4114; The collector electrode of described IGBT pipe 4124 is connected with the drain electrode of described high pressure NMOS pipe 4114 and connects the UVS end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4124 is connected with source electrode with the substrate of described high pressure NMOS pipe 4114 and the UN that connects described Intelligent Power Module 4100 holds.

The VLO1 end of described Intelligent Power Module 4100 is connected with the grid of IGBT pipe 4125, and the VLO2 end of described Intelligent Power Module 4100 is connected with the grid of NMOS pipe 4115; The collector electrode of described IGBT pipe 4125 is connected with the drain electrode of described high pressure NMOS pipe 4115 and connects the VVS end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4124 is connected with source electrode with the substrate of described high pressure NMOS pipe 4115 and the VN that connects Intelligent Power Module 4100 holds.

The WLO1 end of described Intelligent Power Module 4100 is connected with the grid of IGBT pipe 4125, and the WLO2 end of described Intelligent Power Module 4100 is connected with the grid of NMOS pipe 4115; The collector electrode of described IGBT pipe 4125 is connected with the drain electrode of described high pressure NMOS pipe 4115 and connects the WVS end of described Intelligent Power Module 4100, and the emitter-base bandgap grading of described IGBT pipe 4125 is connected with source electrode with the substrate of described high pressure NMOS pipe 4115 and the WN that connects described Intelligent Power Module 4100 holds.

As shown in Figure 9 B, as a kind of comparatively preferred embodiment, it is example that the output gating circuit 4400(in the Intelligent Power Module 4100 in Fig. 9 A be take the lower brachium pontis of U phase, V phase and W phase) concrete structure can be as:

The low-pressure area power supply anode VCC of described output gating circuit 4400 with one end of resistance 5202, the low-pressure area power supply anode of the low-pressure area power supply anode of UL drive circuit 5014, VL drive circuit 5015, the low-pressure area power supply anode of WL drive circuit 5016 be connected.

The other end of described resistance 5202 with the positive input terminal of voltage comparator 5111, the positive input terminal of the positive input terminal of voltage comparator 5113, voltage comparator 5121, the positive input terminal of the positive input terminal of voltage comparator 5123, voltage comparator 5131, one end of the positive input terminal of voltage comparator 5133, resistance 5201, one end of resistance 5203 be connected.

The anode of voltage source 5110 is connected with the negative terminal of described voltage comparator 5111, and the negative terminal of described voltage source 5110 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The anode of voltage source 5112 is connected with the negative terminal of described voltage comparator 5113, and the negative terminal of described voltage source 5112 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The output of described voltage comparator 5111 be connected with 5115 inputs of door, described and another input of door 5115 and the ULIN of described output gating circuit 4400 end are connected; The output of described voltage comparator 5113 be connected with 5114 inputs of door, described and another input of door 5114 and the ULIN of described output gating circuit 4400 end are connected; Describedly be connected with the input of described UL drive circuit 5014 with the output of door 5115, the output of described UL drive circuit 5014 is connected with the ULO1 end of described output gating circuit 4400; Describedly be connected with the input of described UL drive circuit 5024 with the output of door 5114, the output of described UL drive circuit 5024 is connected with the ULO2 end of described output gating circuit 4400.

The anode of voltage source 5120 is connected with the negative terminal of described voltage comparator 5121, and the negative terminal of described voltage source 5120 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The anode of voltage source 5122 is connected with the negative terminal of described voltage comparator 5123, and the negative terminal of described voltage source 5122 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The output of described voltage comparator 5121 be connected with 5125 inputs of door, described and another input of door 5125 and the VLIN of described output gating circuit 4400 end are connected; The output of described voltage comparator 5123 be connected with 5124 inputs of door, described and another input of door 5124 and the VLIN of described output gating circuit 4400 end are connected; Describedly be connected with the input of described VL drive circuit 5015 with the output of door 5125, the output of described VL drive circuit 5015 is connected with the VLO1 end of described output gating circuit 4400; Describedly be connected with the input of described VL drive circuit 5025 with the output of door 5124, the output of described VL drive circuit 5025 is connected with the VLO2 end of described output gating circuit 4400.

The anode of voltage source 5130 is connected with the negative terminal of described voltage comparator 5131, and the negative terminal of described voltage source 5130 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The anode of voltage source 5132 is connected with the negative terminal of described voltage comparator 5133, and the negative terminal of described voltage source 5132 meets the low-pressure area potential minimum reference point GND of described output gating circuit 4400; The output of described voltage comparator 5131 be connected with 5135 inputs of door, described and another input of door 5135 and the WLIN of described output gating circuit 4400 end are connected; The output of described voltage comparator 5133 be connected with 5134 inputs of door, described and another input of door 5134 and the WLIN of described output gating circuit 4400 end are connected; Describedly be connected with the input of described WL drive circuit 5016 with the output of door 5135, the output of described WL drive circuit 5016 is connected with the WLO1 end of described output gating circuit 4400; Describedly be connected with the input of described WL drive circuit 5026 with the output of door 5134, the output of described WL drive circuit 5026 is connected with the WLO2 end of described output gating circuit 4400.

The drain electrode of NMOS pipe 5200 is connected with the other end of described resistance 5203, and described NMOS manages the other end that 5200 substrate is connected with source electrode and connects described resistance 5201, and meets GND; The grid of described NMOS pipe 5200 is connected with the output of voltage comparator 5300, and the positive input terminal of described voltage comparator 5300 is connected to current source 5400, negative input end is connected to port ITRIP.

The low-pressure area power supply negative terminal of the low-pressure area power supply negative terminal of the low-pressure area power supply negative terminal of described UL drive circuit 5014, UL drive circuit 5024, described VL drive circuit 5015, VL drive circuit 5025, described WL drive circuit 5016, WL drive circuit 5026 is connected, and meets GND.

(4) operation principle

Due to upper brachium pontis U, V, W three-phase structure is identical and parameter arranges in full accordly, and lower brachium pontis U, V, W three-phase structure is identical and parameter arranges in full accordly, the U of herein only take descends brachium pontis to describe as example mutually:

1, when Intelligent Power Module 4100 is operated in high frequency, ITRIP port input high level, voltage comparator 5300 output low levels, described NMOS pipe 5200 turn-offs, if the resistance of described resistance 5201 is the resistance of R1, described resistance 5202, be that the resistance of R2, described resistance 5203 is R3, the voltage VA that in Fig. 9 B, A is ordered is:

VA = \frac{R 1}{R 1 + R 2} \cdot VCC

The magnitude of voltage of supposing described voltage source 5110 is V1, the magnitude of voltage of described voltage source 5112 is V2, the value of design V1 and V2, make V1<VA, V2<VA, thereby make described voltage comparator 5111 and voltage comparator 5113 output high level, the signal of ULIN is after described and door 5115 and described and door 5114, described, produce respectively the signal identical with ULIN with door 5115 and output described and door 5114, to control respectively described UL drive circuit 5014 and described UL drive circuit 5024.

2, when Intelligent Power Module 4100 is operated in low frequency, ITRIP port input low level, voltage comparator 5300 output high level, described NMOS manages 5200 conductings, and the voltage VA that in Fig. 9 B, A is ordered is:

VA = \frac{R 1 | | R 3}{R 1 | | R 3 + R 2} \cdot VCC

The value of design V1 and V2, make V1>VA, V2<VA, thereby make described voltage comparator 5111 output low levels and described voltage comparator 5113 output high level, now, signal regardless of ULIN, described with door 5115 constant output low levels, describedly synchronize with ULIN signal with door 5114 output, the input perseverance of described UL drive circuit 5014 is low level, the output that makes described UL drive circuit 5014 is also correspondingly permanent is low level, the permanent shutoff of therefore described IGBT pipe 4124, and the output of described UL drive circuit 5024 is controlled by ULIN, make described high pressure NMOS pipe 4114 under the effect of ULIN, guarantee normal break-make.

Wherein, the circuit structure of described UL drive circuit 5024 can be identical with the circuit structure of described UL drive circuit 5014; But because the gate capacitance of described high pressure NMOS pipe 4114 generally can be less than the gate capacitance of described IGBT pipe 4124, therefore for the consideration reducing costs, also can suitably reduce the fan-out capability of described UL drive circuit 5024, can control equally the break-make of described high pressure NMOS pipe 4114 under ULIN effect and control.

(5) parameter is selected

V1 can consider to be designed to 11V, and V2 can consider to be designed to 9V, and R1 can consider to be designed to 130k Ω, and R2 can consider to be designed to 20k Ω, and R3 can consider to be designed to 58k Ω,,

When ITRIP end input high level, VA=13V, meets VA>V1, VA>V2;

When ITRIP end input low level, VA=10V, meets VA<V1, VA>V2.

Because the value of R1, R2, R3 is all very large, no matter described NMOS pipe 5200 is opened or is turn-offed, and the electric current that flows through this resistance branch is all μ A rank, makes the quiescent dissipation of system can be controlled at very low level; Meanwhile, the value of V1 and V2 is larger, is to cause false triggering for fear of ground line current noise.

Certainly, the value is here only a kind ofly comparatively preferred embodiment to it will be understood by those skilled in the art that and can select other numerical value according to actual conditions and demand, to realize identical control effect.

The invention allows for a kind of Intelligent Power Module, comprise the power control circuit as described in any one in technique scheme.

The invention allows for a kind of frequency-conversion domestic electric appliances, comprise the Intelligent Power Module as described in technique scheme, such as convertible frequency air-conditioner, frequency conversion refrigerator, variable-frequency washing machine etc.

More than be described with reference to the accompanying drawings technical scheme of the present invention, the present invention proposes a kind of power control circuit, a kind of Intelligent Power Module and a kind of frequency-conversion domestic electric appliances, can realize following technique effect:

When Intelligent Power Module need to produce larger drive current, Intelligent Power Module can provide the on-off element with enough current capacities, because when system needs large drive current, always wish to obtain enough energy fast and pay close attention to less to power consumption, so even switching loss is now higher, do not affect overall system performance evaluation yet.

When Intelligent Power Module need to produce less drive current, Intelligent Power Module can provide the on-off element that switching loss is less, because when system needs less drive current, always wish to obtain energy consumption still less, so, in the situation that current capacity meets system requirements, less switching loss can improve overall system performance evaluation.

When little electric current, Intelligent Power Module of the present invention can switch to the pattern of only having the little current capacity on-off element work that switching loss is less in time, can effectively reduce the energy consumption of Intelligent Power Module; And when large electric current, Intelligent Power Module of the present invention can switch to again the pattern that the on-off element that has the on-off element of larger current capacity and have small electric stream ability is worked simultaneously in time, avoid the element damage causing because electric current is excessive, effectively improve the robustness of Intelligent Power Module, avoid Intelligent Power Module because pursuing the negative effects such as low energy consumption causes that overcurrent punctures, thereby the combination property of Intelligent Power Module is improved.

Meanwhile, the on-off element owing to using high pressure NMOS pipe as little electric current, can directly utilize the parasitic diode of high pressure NMOS pipe self as anti-paralleled diode, make lower brachium pontis without re-using FRD pipe, aspect on-off element, compared with prior art, cost increase is very limited in the present invention; In addition, according to different current capacity demands, switch different on-off elements, no longer large current switching element is proposed to harsh switching characteristic requirement, can low-cost realize the little energy consumption under the little electric current of Intelligent Power Module, make the civil nature of low power-consumption intelligent power model become possibility.

The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims

1. a power control circuit, is characterized in that, comprising:

Low-power consumption switch element, is connected in parallel to the arbitrary IGBT pipe in Intelligent Power Module, to form switch module;

Frequency detection module, is connected to described Intelligent Power Module, for detection of the operating frequency of described Intelligent Power Module, and in the situation that described operating frequency is high frequency, exports first signal, in the situation that described operating frequency is low frequency, exports secondary signal;

Switching controls module, be connected to described switch module and described frequency detection module, for in the situation that receiving described first signal, only make described arbitrary IGBT pipe or make described arbitrary IGBT pipe simultaneously and described low-power consumption switch element in running order, and in the situation that receiving described secondary signal, only make described low-power consumption switch element in running order.

2. power control circuit according to claim 1, is characterized in that, described frequency detection module comprises:

Parameter sampling circuit, is connected to described switch module, for the circuit characteristic parameter to described switch module, samples;

Parameter comparison circuit, is connected to described parameter sampling circuit, judges that described operating frequency is as high frequency, otherwise judge that described operating frequency is as low frequency while being greater than preset parameter value for the numerical value of circuit characteristic parameter in sampling.

3. power control circuit according to claim 1, is characterized in that, if described switching controls module only makes described arbitrary IGBT pipe in running order in the situation that receiving described first signal, described switching controls module comprises:

Switching circuit, be connected to described frequency detection module and signal source, for conducting in the situation that receiving described first signal, so that described source ground, and disconnect in the situation that receiving described secondary signal, so that described signal source exports state control circuit to;

Described state control circuit, the control end of described on-off control circuit is connected between described signal source and described switching circuit, for the in the situation that of described switching circuit conducting, control described arbitrary IGBT pipe in running order, and the in the situation that of described switching circuit cut-off, control described low-power consumption switch element in running order.

4. power control circuit according to claim 3, is characterized in that, described state control circuit comprises:

Analog switch, described analog switch comprises:

Control piece, is connected between described signal source and described switching circuit, generates the first switching signal, in the situation that described switching circuit disconnects, generates the second switching signal in the situation that of described switching circuit conducting;

Be subject to control, the described one end of control that is subject to is connected to the signal input part that described switch module is corresponding, described in be subject to the other end of control in the situation that receiving described the first switching signal, to be connected to the first drive circuit, in the situation that receiving described the second switching signal, be connected to the second drive circuit;

Wherein, described the first drive circuit for described arbitrary IGBT pipe is driven, described the second drive circuit is for driving described low-power consumption switch element.

5. power control circuit according to claim 3, is characterized in that, described state control circuit comprises:

Analog switch, described analog switch comprises:

Control piece, is connected between described signal source and described switching circuit, generates the 3rd switching signal, in the situation that described switching circuit disconnects, generates the 4th switching signal in the situation that of described switching circuit conducting;

Be subject to control, described one end that is subject to control is connected to one end of drive circuit, described in be subject to the other end of control in the situation that receiving described the 3rd switching signal, to be connected to described arbitrary IGBT pipe, in the situation that receiving described the 4th switching signal, to be connected to described low-power consumption switch element;

Wherein, the other end of described drive circuit is connected to the signal input part that described switch module is corresponding, for described arbitrary IGBT pipe or described low-power consumption switch element are driven.

6. power control circuit according to claim 1, it is characterized in that, if described switching controls module makes described arbitrary IGBT manage in the situation that receiving described first signal and described low-power consumption switch element is in running order simultaneously, described switching controls module comprises:

Voltage follower circuit, is connected to described frequency detection module and signal source, for export the first voltage in the situation that receiving described first signal, and in the situation that receiving described secondary signal, exports second voltage;

State control circuit, be connected to described voltage follower circuit, for at described the first voltage in the first number range in the situation that, control described arbitrary IGBT pipe and described low-power consumption switch element in running order, and in the situation that described second voltage is within the scope of second value, control described low-power consumption switch element in running order;

Wherein, described the first number range refers to and is greater than the first predeterminated voltage value, and described second value scope refers to and is greater than the second predeterminated voltage value and is less than or equal to described the first predeterminated voltage value.

7. power control circuit according to claim 6, is characterized in that, described voltage follower circuit comprises:

The first resistance and the second resistance, described the first resistance and described the second resistance are connected between signal source and ground successively;

Switching device and the 3rd resistance, after described switching device is connected with described the 3rd resistance, be parallel to the two ends of described the second resistance, described switching device is also connected to described frequency detection module, for conducting in the situation that receiving described first signal, and end in the situation that receiving described secondary signal.

8. power control circuit according to claim 6, is characterized in that, described state control circuit comprises:

The first voltage comparator, the first input end of described the first voltage comparator is connected to common port, second input of described the first resistance and described the second resistance and inputs described the first predeterminated voltage value, for at described the first voltage in the first number range in the situation that, output the first enabling signal;

Second voltage comparator, the first input end of described second voltage comparator is connected to common port, second input of described the first resistance and described the second resistance and inputs described the second predeterminated voltage value, for at described second voltage in second value scope in the situation that, output the second enabling signal;

The first logical circuit, output, the second input that the first input end of described the first logical circuit is connected to described the first voltage comparator are connected to signal input part, the output that described switch module is corresponding and are connected to the first drive circuit, for in the situation that receiving described the first enabling signal, export the signal from described signal input part to described the first drive circuit;

The second logical circuit, output, the second input that the first input end of described the second logical circuit is connected to described second voltage comparator is connected to described signal input part, output is connected to the second drive circuit, for in the situation that receiving described the second enabling signal, export the signal from described signal input part to described the second drive circuit;

9. according to the power control circuit described in any one in claim 1 to 8, it is characterized in that, also comprise:

Time judgment module, be connected to described switching controls module, for being greater than default very first time threshold value in the duration that receives described first signal, or the duration that receives described secondary signal is greater than in the situation of the second default time threshold, allow described switching controls module according to described first signal or described secondary signal, to control the operating state of described switch module, otherwise do not allow.

10. power control circuit according to claim 9, is characterized in that, described time judgment module comprises:

Inverter, is connected to described switching controls module, for described first signal or described secondary signal that described switching controls module is transmitted, carries out anti-phase processing;

Energy storage device, the anodic bonding of described energy storage device is to input and the described switching controls module of described inverter, for in the situation that described switching controls module receives low level described first signal or described secondary signal, storage is from the electric energy of particular signal source, and be greater than default very first time threshold value in the situation that receive the duration of described first signal, to described inverter input high level signal;

Power consumption device, be connected to described energy storage device and described switching controls module, be used in the situation that described switching controls module receives described first signal or the described secondary signal of high level, consume the electric energy of described energy storage device storage, and in the situation that the duration of described secondary signal be greater than the second default time threshold, to described inverter input low level signal.

11. 1 kinds of Intelligent Power Module, is characterized in that, comprise the power control circuit as described in any one in claim 1-10.

12. 1 kinds of frequency-conversion domestic electric appliances, is characterized in that, comprise Intelligent Power Module as claimed in claim 11.