CN103956897B - Power control circuit and SPM, frequency-conversion domestic electric appliances - Google Patents
Power control circuit and SPM, frequency-conversion domestic electric appliances Download PDFInfo
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- CN103956897B CN103956897B CN201410038991.2A CN201410038991A CN103956897B CN 103956897 B CN103956897 B CN 103956897B CN 201410038991 A CN201410038991 A CN 201410038991A CN 103956897 B CN103956897 B CN 103956897B
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Abstract
The invention provides a kind of power control circuit, including：Low power consumption switch element, is connected in parallel to any IGBT pipes in SPM, to constitute switch module；Frequency detection module, the working frequency for detecting the SPM；Switching control module, for in the case where receiving first signal, only make any IGBT pipes or while making any IGBT pipes and the low power consumption switch element in running order, and in the case where receiving the secondary signal, only make the low power consumption switch element in running order.The invention also provides a kind of SPM and a kind of frequency-conversion domestic electric appliances.Can so as to help to reduce the power consumption of SPM, and be not in the risk that switching device is punctured by excessively stream under different working frequencies, using different switching devices by technical scheme.
Description
Technical field
The present invention relates to power consumption control techniques field, in particular to a kind of power control circuit, a kind of intelligent power
Module and a kind of frequency-conversion domestic electric appliances.
Background technology
SPM, i.e. IPM (Intelligent Power Module) are a kind of by power electronics and integrated electricity
The power drive class product that road technique is combined.Device for power switching and high-voltage driving circuit are integrated in one by SPM
Rise, and interior keep the failure detector circuits such as overvoltage, overcurrent and overheat.On the one hand SPM receives MCU control
Signal, driving subsequent conditioning circuit work, on the other hand sends the state detection signal of system back to MCU.With traditional discrete scheme phase
Than SPM wins increasing market with advantages such as its high integration, high reliability, is particularly suitable for driving electricity
The frequency converter of machine and various inverters, are to be applied to frequency control, metallurgical machinery, electric propulsion, servo-drive, frequency-conversion domestic electric appliances
A kind of desired power level electronic device.
In the related art, the circuit structure of SPM 100 is as shown in Figure 1：
The VCC ends of HVIC pipes 1000 are as the low-pressure area power supply anode VDD of SPM 100, and VDD is generally
15V；Meanwhile, there is boostrap circuit inside the HVIC pipes 1000, boostrap circuit structure is as follows：
VCC ends drive with UH drive circuits 101, VH drive circuits 102, WH drive circuits 103, UL drive circuits 104, VL
Circuit 105, the low-pressure area power supply anode of WL drive circuits 106 are connected.
The HIN1 ends of the HVIC pipes 1000 as bridge arm input UHIN in the U phases of the SPM 100,
The inside of HVIC pipes 1000 is connected with the input of the UH drive circuits 101；The HIN2 ends conduct of the HVIC pipes 1000
Bridge arm input VHIN in the V phases of the SPM 100, in the inside of HVIC pipes 1000 and the VH drive circuits
102 input is connected；The HIN3 ends of the HVIC pipes 1000 are inputted as bridge arm in the W phases of the SPM 100
WHIN is held, is connected in the inside of HVIC pipes 1000 with the input of the WH drive circuits 103.
The LIN1 ends of the HVIC pipes 1000 as bridge arm input ULIN under the U phases of the SPM 100,
The inside of HVIC pipes 1000 is connected with the input of the UL drive circuits 104；The LIN2 ends conduct of the HVIC pipes 1000
Bridge arm input VLIN under the V phases of the SPM 100, in the inside of HVIC pipes 1000 and the VL drive circuits
105 input is connected；The LIN3 ends of the HVIC pipes 1000 are inputted as bridge arm under the W phases of the SPM 100
WLIN is held, is connected in the inside of HVIC pipes 1000 with the input of the WL drive circuits 106；Here, the intelligent power
The six tunnels input of U, V, W three-phase of module 100 receives 0V or 5V input signal.
The GND ends of the HVIC pipes 1000 as the SPM 100 low-pressure area power supply negative terminal COM,
And with the UH drive circuits 101, the VH drive circuits 102, the WH drive circuits 103, the UL drive circuits 104,
The VL drive circuits 105, the low-pressure area power supply negative terminal of the WL drive circuits 106 are connected.
The VB1 ends of the HVIC pipes 1000 are in the inside of HVIC pipes 1000 and the higher-pressure region of the UH drive circuits 101
Power supply anode is connected, and in one end of the external connection electric capacity 131 of HVIC pipes 1000, and is used as the SPM
100 U phases higher-pressure region power supply anode UVB；The HO1 ends of the HVIC pipes 1000 the inside of the HVIC pipes 1000 with it is described
The output end of UH drive circuits 101 is connected, and is connected in the outside of HVIC pipes 1000 with the grid of bridge arm IGBT pipes 121 in U phases；
The VS1 ends of the HVIC pipes 1000 are in the inside of HVIC pipes 1000 and the higher-pressure region power supply of the UH drive circuits 101
Negative terminal is connected, the bridge arm under emitter-base bandgap grading, the anode of FRD pipe 111, U phase of the outside of HVIC pipes 1000 with the IGBT pipes 121
Colelctor electrode, the negative electrode of FRD pipes 114, the other end of the electric capacity 131 of IGBT pipes 124 are connected, and are used as the intelligent power mould
The U phases higher-pressure region power supply negative terminal UVS of block 100.
The VB2 ends of the HVIC pipes 1000 are in the inside of HVIC pipes 1000 and the higher-pressure region of the VH drive circuits 102
Power supply anode is connected, and in one end of the external connection electric capacity 132 of HVIC pipes 1000, is used as the SPM
100 U phases higher-pressure region power supply anode VVB；The HO2 ends of the HVIC pipes 1000 the inside of the HVIC pipes 1000 with it is described
The output end of VH drive circuits 102 is connected, in the outside of HVIC pipes 1000 and the grid phase of bridge arm IGBT pipes 123 in V phases
Even；The VS2 ends of the HVIC pipes 1000 power electricity in the higher-pressure region of the inside of the HVIC pipes 1000 and the VH drive circuits 102
Source negative terminal is connected, the bridge arm under emitter-base bandgap grading, the anode of FRD pipe 112, V phase of the outside of HVIC pipes 1000 with the IGBT pipes 122
Colelctor electrode, the negative electrode of FRD pipes 115, the other end of the electric capacity 132 of IGBT pipes 125 are connected, and are used as the intelligent power mould
The W phases higher-pressure region power supply negative terminal VVS of block 100.
The VB3 ends of the HVIC pipes 1000 are in the inside of HVIC pipes 1000 and the higher-pressure region of the WH drive circuits 103
Power supply anode is connected, and in one end of the external connection electric capacity 133 of HVIC pipes 1000, is used as the SPM
100 W phases higher-pressure region power supply anode WVB；The HO3 ends of the HVIC pipes 1000 the inside of the HVIC pipes 1000 with it is described
The output end of WH drive circuits 101 is connected, and is connected in the outside of HVIC pipes 1000 with the grid of bridge arm IGBT pipes 123 in W phases；
The VS3 ends of the HVIC pipes 1000 are in the inside of HVIC pipes 1000 and the higher-pressure region power supply of the WH drive circuits 103
Negative terminal is connected, the bridge arm under emitter-base bandgap grading, the anode of FRD pipe 113, W phase of the outside of HVIC pipes 1000 with the IGBT pipes 123
Colelctor electrode, the negative electrode of FRD pipes 116, the other end of the electric capacity 133 of IGBT pipes 126 are connected, and are used as the intelligent power mould
The W phases higher-pressure region power supply negative terminal WVS of block 100.
The LO1 ends of the HVIC pipes 1000 are connected with the grid of the IGBT pipes 124；The LO2 ends of the HVIC pipes 1000
It is connected with the grid of the IGBT pipes 125；The LO3 ends of the HVIC pipes 1000 are connected with the grid of the IGBT pipes 126.
The emitter-base bandgap grading of the IGBT pipes 124 is connected with the anode of the FRD pipes 114, and is used as the SPM 100
U phase low reference voltages end UN；The emitter-base bandgap grading of the IGBT pipes 125 is connected with the anode of the FRD pipes 115, and is used as the intelligence
The V phase low reference voltages end VN of energy power model 100；The emitter-base bandgap grading of the IGBT pipes 126 is connected with the anode of the FRD pipes 116,
And it is used as the W phase low reference voltages end WN of the SPM 100.
It is the colelctor electrode of the IGBT pipes 121, the negative electrode of the FRD pipes 111, the colelctor electrode of the IGBT pipes 122, described
The negative electrode of FRD pipes 112, the colelctor electrode of the IGBT pipes 123, the negative electrode of the FRD pipes 113 are connected, and are used as the intelligent work(
High voltage the input P, P of rate module 100 typically meet 300V.
The effect of the HVIC pipes 1000 is：
VDD is the power supply anode of the HVIC pipes 1000, and GND is the power supply negative terminal of the HVIC pipes 1000
(VDD-GND voltages are generally 15V).VB1 and VS1 are respectively the positive pole and negative pole of the power supply of U phases higher-pressure region, and HO1 is U phase high pressures
The output end in area；VB2 and VS2 are respectively the positive pole and negative pole of the power supply of V phases higher-pressure region, and HO2 is the output end of V phases higher-pressure region；
VB3 and VS3 are respectively the positive pole and negative pole of the power supply of U phases higher-pressure region, and HO3 is the output end of W phases higher-pressure region；LO1、LO2、LO3
Respectively U phases, V phases, the output end of W phase low-pressure areas.
By input HIN1, HIN2, HIN3 and LIN1, the 0 of LIN2, LIN3 or 5V logic input signal pass to respectively it is defeated
Go out to hold HO1, HO2, HO3 and LO1, LO2, LO3, wherein, HO1 be VS1 or VS1+15V logic output signal, HO2 be VS2 or
VS2+15V logic output signal, HO3 are VS3 or VS3+15V logic output signal, and LO1, LO2, LO3 are patrolling for 0 or 15V
Collect output signal.
Meanwhile, the input signal of same phase can not be simultaneously high level, i.e. HIN1 and LIN1, HIN2 and LIN2, HIN3 and
LIN3 can not be high level simultaneously.
A kind of preferred circuit during 100 real work of SPM is as shown in Figure 2：
External capacitor 135 between UVB and UVS；External capacitor 136 between VVB and VVS；External capacitor 137 between WVB and WVS.
This, the electric capacity 133,132,131 mainly strobes, and the electric capacity 135,136,137 mainly plays storing electricity.
UN, VN, WN are connected, and connect one end of resistance 138 and the Pin7 of MCU pipes 200；The other end of the resistance 138
Meet COM.
The Pin1 of the MCU200 is connected with the UHIN ends of the SPM 100；The Pin2 of the MCU200 with
The VHIN ends of the SPM 100 are connected；The Pin3 of the MCU200 and the SPM 100 WHIN ends
It is connected；The Pin4 of the MCU200 is connected with the ULIN ends of the SPM 100；The Pin5 of the MCU200 with it is described
The VLIN ends of SPM 100 are connected；The Pin6 of the MCU200 and the SPM 100 WLIN ends phase
Even.
Illustrate the working condition of SPM 100 by taking U phases as an example：
1st, when the pin Pin4 of the MCU200 sends high level signal, the pin Pin1 of the MCU200 must be sent out
Go out low level signal, signal makes LIN1 be that high level, HIN1 are low level, at this moment, LO1 output high level and HO1 exports low electricity
It is flat, thus the IGBT pipes 124 are turned on and the IGBT pipes 121 end, VS1 voltages are about 0V；VCC to the electric capacity 133 and
The electric capacity 135 charges, and the dump energy when time long enough or before making the electric capacity 133 and the electric capacity 135 charge is enough
When many, VB1 obtains the voltage close to 15V to VS1.
2nd, when the pin Pin1 of the MCU200 sends high level signal, the pin Pin4 of the MCU200 must send out
Low level signal, signal makes LIN1 be that low level, HIN1 are high level, at this moment, LO1 output low levels and HO1 output high level,
So as to which the IGBT pipes 124 end and the IGBT pipes 121 are turned on, so that VS1 voltages are about 300V, VB1 voltages are lifted to
315V or so, by the electric capacity 133 and the electricity of the electric capacity 135, maintains the work of U phases higher-pressure region, if HIN1 is high electricity
The electricity that the flat duration is short enough or the electric capacity 133 and the electric capacity 135 are stored is enough, and VB1 is to VS1 in U phase height
Voltage in the nip course of work is positively retained at more than 14V.
In practical application, particularly in the application of convertible frequency air-conditioner, MCU200 can be according to environmental change using different
Algorithm controls the break-make of SPM 100, makes frequency-changeable compressor work at different frequencies：
When the break-make of SPM 100 quickly when, compressor operating in high frequency, at this moment, in SPM 100
Six pieces of IGBT pipes (such as IGBT pipes 121 to IGBT pipes 126) in portion need to flow through larger electric current；When SPM 100 is logical
When disconnected slower, at low frequency, at this moment, six pieces of IGBT pipes inside SPM 100 flow through less electricity to compressor operating
Stream.
For the state of compressor low frequency operation, often it is desirable to obtain low-power consumption, and uses IGBT pipes as break-make member
During part, due to the smearing of IGBT pipes, cause the switching loss of on-off element can not possibly be very low, so that SPM
100 loss is also impossible to be made very low.
If substituting IGBT pipes using the metal-oxide-semiconductor without smearing, it can reduce logical really in compressor low frequency operation
Breakdown consumption and system power dissipation, but be due to the limitation of metal-oxide-semiconductor current capacity, it is excessive when compressor enters high-frequency work state
The current range that be able to can bear beyond metal-oxide-semiconductor of electric current and cause metal-oxide-semiconductor excessively stream to burn, fire can be also caused when serious.
In the related art, the low frequency operation loss of SPM is reduced by improving the smearing of IGBT pipes
Realize, but this special process make it that the production cost of IGBT pipes is very high, is not suitable for pushing away in civil areas such as convertible frequency air-conditioners
Extensively.
Therefore, excessively stream wind when how to reduce loss of the SPM in low frequency operation, and avoiding high-frequency work
Danger, and production cost is applied to civil area, as technical problem urgently to be resolved hurrily at present.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art or correlation technique.
Therefore, it is an object of the present invention to propose a kind of power control circuit.
It is another object of the present invention to propose a kind of SPM.
A further object of the present invention is to propose a kind of frequency-conversion domestic electric appliances.
To achieve the above object, a kind of embodiment according to the first aspect of the invention, it is proposed that power control circuit, bag
Include：Low power consumption switch element, is connected in parallel to any IGBT pipes in SPM, to constitute switch module；Frequency detecting mould
Block, is connected to the SPM, the working frequency for detecting the SPM, and in the working frequency
The first signal is exported in the case of for high frequency, be low frequency in the working frequency in the case of export secondary signal；Switching control
Module, is connected to the switch module and the frequency detection module, in the case where receiving first signal, only
Make any IGBT pipes or while any IGBT is managed, Yi Ji in running order with the low power consumption switch element
In the case of receiving the secondary signal, only make the low power consumption switch element in running order.
In the technical scheme, by making low power consumption switch element and the parallel connection of IGBT pipes constitute switch module, and in intelligence
Power model only makes low power consumption switch element in running order when being in low frequency, so as to avoid the smearing of IGBT pipes
And cause unnecessary working loss, help to reduce the overall power of SPM.
Meanwhile, by when SPM is in high frequency so that IGBT pipes are in running order, so as to avoid low work(
Consumption switch element is punctured by excessively stream, helps to ensure the security of intelligent power consumption module.
Wherein, low power consumption switch element is specifically as follows metal-oxide-semiconductor, such as NMOS tube etc., so that intelligent work(can either be born
Rate module is in the current strength under low frequency operation state, and due to effectively reducing switching losses without smearing and being
System loss.
In addition, power control circuit according to the above embodiment of the present invention, can also have technical characteristic additional as follows：
According to one embodiment of present invention, it is preferable that the frequency detection module includes：Parameter sampling circuit, connection
To the switch module, sampled for the circuit characteristic parameter to the switch module；Parameter comparison circuit, is connected to institute
Parameter sampling circuit is stated, the numerical value for the circuit characteristic parameter in sampling judges the working frequency when being more than preset parameter value
For high frequency, otherwise judge the working frequency as low frequency.
In the technical scheme, directly detected, can accurately be judged by the working condition to SPM
Go out the working frequency that SPM is presently in, for the entrance work of control IGBT pipes and/or low power consumption switch element
Make state, it is ensured that entering only low power consumption switch element under low frequency must make IGBT pipes enter work shape under working condition, high frequency
State.
Wherein, the circuit characteristic parameter of switch module can have a lot, such as when the working frequency of SPM becomes
During change, curent change (operating current under high frequency is larger, the operating current under low frequency is smaller) may be directly resulted in, thus can be with
Directly electric current is sampled；Certainly, it will be understood by those skilled in the art that obviously can also be by other specification
Sample to realize the identification to working frequency, such as can be by being sampled to the voltage difference produced on some power consumption element.
According to one embodiment of present invention, it is preferable that if the switching control module is receiving first signal
In the case of only make that any IGBT pipe is in running order, then the switching control module includes：On-off circuit, is connected to
The frequency detection module and signal source, for being turned in the case where receiving first signal, so that the signal source
Ground connection, and disconnected in the case where receiving the secondary signal, so that the signal source is exported to state control circuit；Institute
State control circuit is stated, the control end of the state control circuit is connected between the signal source and the on-off circuit, used
In the case of being turned in the on-off circuit, control any IGBT pipes in running order, and in the switch electricity
In the case that road is ended, control the low power consumption switch element in running order.
In the technical scheme, by setting on-off circuit, the working frequency change of SPM is reflected into shape
The input signal change of state control circuit, so as to the working condition of accurate control IGBT pipes and low power consumption switch element.
A preferred embodiment of the invention, the state control circuit includes：Analog switch, the simulation
Switch includes：Control piece, is connected between the signal source and the on-off circuit, in the case where the on-off circuit is turned on
Generate the first switching signal, generate the second switching signal in the case where the on-off circuit disconnects；It is described by control by control
One end be connected to the corresponding signal input part of the switch module, the other end by control is cut receiving described first
The first drive circuit is connected in the case of changing signal, the second drive is connected in the case where receiving second switching signal
Dynamic circuit；Wherein, first drive circuit be used for any IGBT pipes are driven, second drive circuit is used for
The low power consumption switch element is driven.
In the technical scheme, independent drive circuit can be respectively adopted to realize to IGBT pipes and low power consumption switch member
The driving of part, thus can be controlled by the connection to signal input part and the first drive circuit or the second drive circuit, so that
Ensure, when SPM is under different operating frequency, corresponding drive circuit can be accurately switched to, to drive
IGBT is managed or low power consumption switch element enters working condition.
When IGBT pipes and low power consumption switch element use independent drive circuit, due to needed for low power consumption switch element
Driving voltage and electric current are smaller (relative to IGBT pipes), thus the driving force of corresponding second drive circuit can be smaller, interior
The size of the driving element in portion can also be smaller, so as to help to reduce the area occupied of the second drive circuit, the intelligent work(of reduction
The production cost of rate module.
According to another preferred embodiment of the present invention, the state control circuit includes：Analog switch, the simulation
Switch includes：Control piece, is connected between the signal source and the on-off circuit, in the case where the on-off circuit is turned on
Generate the 3rd switching signal, generate the 4th switching signal in the case where the on-off circuit disconnects；It is described by control by control
One end be connected to one end of drive circuit, the other end by control is in the case where receiving the 3rd switching signal
It is connected to any IGBT pipes, the low power consumption switch member is connected in the case where receiving the 4th switching signal
Part；Wherein, the other end of the drive circuit is connected to the corresponding signal input part of the switch module, for described any
IGBT is managed or the low power consumption switch element is driven.
In the technical scheme, IGBT pipes and low power consumption switch element can also be used and be driven with one drive circuit,
It can then be controlled by the connection to IGBT pipes or low power consumption switch element and the drive circuit, so that it is guaranteed that in intelligent power mould
When block is under different operating frequency, corresponding switching device can be accurately switched to, to drive IGBT to manage or low power consumption switch
Element enters working condition.
According to another embodiment of the invention, it is preferable that if the switching control module is receiving first letter
Make any IGBT pipes and the low power consumption switch element in running order simultaneously in the case of number, then the switching control
Module includes：Voltage follower circuit, is connected to the frequency detection module and signal source, for receiving first signal
In the case of export first voltage, and export second voltage in the case where receiving the secondary signal；State control electricity
Road, is connected to the voltage follower circuit, in the case of being in the first number range in the first voltage, and control is described
Any IGBT pipes and the low power consumption switch element are in running order, and are in second value scope in the second voltage
In the case of interior, control the low power consumption switch element in running order；Wherein, first number range refers to be more than the
One preset voltage value, the second value scope refers to be more than the second preset voltage value and less than or equal to the described first default electricity
Pressure value.
In the technical scheme, (the first signal is received) by the regulation and control to output voltage, i.e., under high frequency defeated
Go out under first voltage, low frequency and (receive secondary signal) output second voltage, the working frequency of SPM can be become
Change the numerical value change for being reflected into output voltage, then judge with reference to the number range residing for output voltage, you can accurate control
The working condition of IGBT pipes and low power consumption switch element.
A preferred embodiment of the invention, the voltage follower circuit includes：First resistor and second resistance,
The first resistor and the second resistance are sequentially connected in series between signal source and ground；Switching device and 3rd resistor, it is described to open
After pass device is connected with the 3rd resistor, the two ends of the second resistance are parallel to, the switching device is additionally coupled to described
Frequency detection module, for being turned in the case where receiving first signal, and is receiving the secondary signal
In the case of end.
In the technical scheme, pass through the on or off of controlling switch device so that the working condition hair of 3rd resistor
During changing, i.e. switch device conductive, after second resistance and 3rd resistor are in parallel, first resistor is series at；And switching device
During cut-off, only connected by first resistor and second resistance, so as to control the numerical value of output voltage to change.
A preferred embodiment of the invention, the state control circuit includes：First voltage comparator, it is described
The first input end of first voltage comparator is connected to common port, the second input of the first resistor and the second resistance
First preset voltage value is inputted, in the case of being in the first number range in the first voltage, output first is opened
Dynamic signal；Second voltage comparator, the first input end of the second voltage comparator is connected to the first resistor and described
The common port of second resistance, the second input input second preset voltage value, for being in second in the second voltage
In the case of number range, the second enabling signal is exported；First logic circuit, the first input end of first logic circuit connects
Be connected to the output end of the first voltage comparator, the second input be connected to the corresponding signal input part of the switch module,
Output end is connected to the first drive circuit, for that in the case where receiving first enabling signal, will come from the signal
The signal output of input is to first drive circuit；Second logic circuit, the first input end of second logic circuit
The output end of the second voltage comparator, the second input is connected to be connected to the signal input part, output end and be connected to
Second drive circuit, in the case where receiving second enabling signal, by the signal from the signal input part
Export to second drive circuit；Wherein, first drive circuit be used for any IGBT pipes are driven, it is described
Second drive circuit is used to be driven the low power consumption switch element.
In the technical scheme, independent drive circuit can be respectively adopted to realize to IGBT pipes and low power consumption switch member
The driving of part, thus can control whether to input a signal into the signal output at end to the first drive circuit or the second drive circuit,
So that it is guaranteed that when SPM is under different operating frequency, the signal output at end can be input a signal into exactly extremely
Corresponding drive circuit, to drive, IGBT is managed or low power consumption switch element enters working condition.
Similarly, when IGBT pipes and low power consumption switch element use independent drive circuit, due to low power consumption switch member
Driving voltage and electric current needed for part are smaller (relative to IGBT pipes), thus the driving force of corresponding second drive circuit can be with
The size of smaller, internal driving element can also be smaller, so as to help to reduce the area occupied of the second drive circuit, reduction
The production cost of SPM.
In any of the above-described technical scheme, it is preferable that also include：Time judgment module, is connected to the switching control mould
Block, for being more than default very first time threshold value in the duration for receiving first signal, or receives described second
In the case that the duration of signal is more than default second time threshold, it is allowed to which the switching control module is according to described first
Signal or the secondary signal control the working condition of the switch module, otherwise do not allow.
In the technical scheme, SPM when the working condition to itself is detected, by it is lasting when
Between judgement, ensure that SPM realizes corresponding switching really, so as to avoid instantaneous circuit characteristic from changing
Erroneous judgement caused by (such as instantaneous overvoltage or excessively stream) is possible, contributes to during the degree of accuracy and use that lifting judges
Security.
According to one embodiment of present invention, it is preferable that the time judgment module includes：Phase inverter, is connected to described
Switching control module, is carried out anti-phase for first signal to being transmitted in the switching control module or the secondary signal
Processing；Energy storage device, the anode of the energy storage device is connected to the input and the switching control module of the phase inverter, uses
In the case of low level first signal or the secondary signal is received in the switching control module, storage comes from
The electric energy of particular signal source, and receiving situation of the duration more than default very first time threshold value of first signal
Under, to the phase inverter input high level signal；Power consuming devices, are connected to the energy storage device and the switching control module,
In the case of receiving first signal or the secondary signal of high level in the switching control module, institute is consumed
The electric energy of energy storage device storage is stated, and in situation of the duration more than default second time threshold of the secondary signal
Under, to the phase inverter input low level signal.
In the technical scheme, by applying energy storage device so that the time-continuing process of the first signal or secondary signal can
Accurately reflect to storage of the energy storage device to electric energy or release process, and only electric energy be raised and lowered to certain threshold value it
Afterwards, just it is reflected as the change of level height.Meanwhile, based on the logic change in practical application, more phase inverters can be added,
To realize correct logic control.
Wherein, model that should be in advance to energy storage device and power consuming devices is chosen, to enable energy storage device to exist
After time span by very first time threshold value, by low level rise be high level, and by the second time threshold when
Between after length, low level is reduced to by high level.
A kind of embodiment according to a second aspect of the present invention, it is proposed that SPM, including such as above-mentioned technical scheme
Any one of power control circuit.
A kind of embodiment according to a third aspect of the present invention, it is proposed that frequency-conversion domestic electric appliances, including as described in above-mentioned technical scheme
SPM, such as convertible frequency air-conditioner, frequency conversion refrigerator, variable-frequency washing machine etc..
, can be under different working frequencies, using different switching devices, so as to contribute to by above technical scheme
The power consumption of SPM is reduced, and is not in the risk that switching device is punctured by excessively stream.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention will become from description of the accompanying drawings below to embodiment is combined
Substantially and be readily appreciated that, wherein：
Fig. 1 shows the structural representation of the SPM in correlation technique；
Fig. 2 show in correlation technique to SPM carry out SECO when structural representation；
Fig. 3 A show the structural representation of power control circuit according to an embodiment of the invention；
Fig. 3 B show the structural representation of power control circuit according to another embodiment of the invention；
Fig. 3 C show the structural representation of power control circuit according to still another embodiment of the invention；
Fig. 4 shows the schematic diagram of the working frequency of detection SPM according to an embodiment of the invention；
Fig. 5 shows the concrete structure schematic diagram of power control circuit according to an embodiment of the invention；
Fig. 6 A are a kind of structural representations of embodiment of embodiment illustrated in fig. 5；
Fig. 6 B are the structural representations of another embodiment of embodiment illustrated in fig. 5；
Fig. 6 C are the structural representations of the corresponding SPM of embodiment illustrated in fig. 5；
Fig. 7 shows the concrete structure schematic diagram of power control circuit according to another embodiment of the invention；
Fig. 8 is a kind of structural representation of embodiment of embodiment illustrated in fig. 7；
Fig. 9 A are the structural representations of the corresponding SPM of embodiment illustrated in fig. 7；
Fig. 9 B are the structural representations for exporting gating circuit in the SPM shown in Fig. 9 A.
Embodiment
It is below in conjunction with the accompanying drawings and specific real in order to be more clearly understood that the above objects, features and advantages of the present invention
Mode is applied the present invention is further described in detail.It should be noted that in the case where not conflicting, the reality of the application
Applying the feature in example and embodiment can be mutually combined.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still, the present invention may be used also
Implemented with being different from other modes described here using other, therefore, protection scope of the present invention is not limited to following public affairs
The limitation for the specific embodiment opened.
First, overall structure
But on the one hand in the related art, SPM is all using IGBT pipes as switching device, and, IGBT pipes are dragged
Tail effect causes the switching loss under its low frequency too high, on the other hand, if low power consumption switch element is directly used, due to high frequency
Under electric current it is excessive and easily damage low power consumption switch element, or even trigger the unsafe conditions such as fire.
Therefore, in order to solve many problems such as switching loss and excessively stream risk, Fig. 3 A are shown according to the present invention's
The structural representation of the power control circuit of one embodiment.
As shown in Figure 3A, power control circuit according to an embodiment of the invention, including：Low power consumption switch element
111 ', any IGBT being connected in parallel in SPM (than SPM 100 as shown in Figure 1) is managed (shown in Fig. 3 A
For IGBT pipes 121), to constitute switch module (not specific sign in figure)；Frequency detection module 304, is connected to the intelligent work(
Rate module, the working frequency for detecting the SPM, and exported in the case where the working frequency is high frequency
First signal, the working frequency be low frequency in the case of export secondary signal；Switching control module 306, is connected to described
Switch module and the frequency detection module 304, in the case where receiving first signal, only making described any
IGBT is managed or is made any IGBT pipes and the low power consumption switch element 111 ' in running order simultaneously, and is being received
In the case of the secondary signal, only make the low power consumption switch element 111 ' in running order.
In the technical scheme, by make low power consumption switch element 111 ' and IGBT pipes parallel connection constitute switch module, and
SPM only makes low power consumption switch element 111 ' in running order when being in low frequency, so as to avoid IGBT pipes
Smearing and cause unnecessary working loss, contribute to reduce SPM overall power.
Meanwhile, by when SPM is in high frequency so that IGBT pipes are in running order, so as to avoid low work(
Consumption switch element 111 ' is punctured by excessively stream, helps to ensure the security of intelligent power consumption module.
Wherein, low power consumption switch element 111 ' is specifically as follows metal-oxide-semiconductor, such as NMOS tube etc., so that intelligence can either be born
Energy power model is in the current strength under low frequency operation state, and due to effectively reducing switching losses without smearing
And system loss.
In figure 3 a, specifically it is illustrated by taking the IGBT pipes 121 of bridge arm in U phases as shown in Figure 1 as an example；But it is actual
On, it is clear that identical power consumption can be carried out to the IGBT pipes 122 of bridge arm, IGBT pipes 123 in the V phases in SPM, W phases
Control, can also carry out identical power consumption to the IGBT pipes 124 of bridge arm, IGBT pipes 125 and IGBT pipes 126 under U phases, V phases and W phases
Control.
With reference to Fig. 3 B, still by taking U phases as an example, the attachment structure to lower bridge arm is described in detail.Wherein, Fig. 3 B are shown
The structural representation of power control circuit according to another embodiment of the invention.
As shown in Figure 3 B, in another embodiment of the present invention, the IGBT pipes 124 that can also be directed to bridge arm under U phases enter
Row power consumption control.Specifically, low power consumption switch element 114 ' can be connected in parallel to the two ends of IGBT pipes 124, so that by IGBT pipes 124
A switch module (not specific sign in figure) is constituted with low power consumption switch element 114 '.
Based on said structure, on the one hand the working frequency of above-mentioned switch module is detected by frequency detection module 304,
On the other hand by switching control module 306 according to the working frequency detected, control IGBT pipes 124 and low power consumption switch element
Whether 114 ' enter working condition, if into working condition, break-make control is carried out by the port LIN1 signals inputted.
In Fig. 3 A and Fig. 3 B, for the ease of individually explanation, frequency detection module 304 and switching control module are all illustrated
306；In fact, in order to simplify circuit, improve synchronism, same frequency detecting can also be used between different IGBT pipes
Module 304.
Fig. 3 C show the structural representation of power control circuit according to still another embodiment of the invention.
As shown in Figure 3 C, power control circuit according to still another embodiment of the invention, still by taking U phases as an example, it is assumed that by
Switching control module 306A carries out power consumption control to the IGBT pipes 121 and low power consumption switch element 111 ' of upper bridge arm, controlled by switching
Molding block 306B carries out power consumption control to the IGBT pipes 124 and low power consumption switch element 114 ' of lower bridge arm, while only being examined by frequency
It is that switching control module 306A and switching control module 306B provide corresponding working frequency testing result to survey module 304.
User or manufacturer can according to the actual requirements, and number and connected mode to frequency detection module 304 are selected,
Such as one independent frequency detection module 304 of each IGBT pipes correspondence, or per corresponding one independent frequency detecting mould
Block 304, or all IGBT pipes all correspond to same frequency detection module 304.
2nd, frequency detection module
According to one embodiment of present invention, it is preferable that the frequency detection module 304 includes：Parameter sampling circuit, even
The switch module is connected to, is sampled for the circuit characteristic parameter to the switch module；Parameter comparison circuit, is connected to
The parameter sampling circuit, the numerical value for the circuit characteristic parameter in sampling judges the work frequency when being more than preset parameter value
Rate is high frequency, otherwise judges the working frequency as low frequency.
In the technical scheme, directly detected, can accurately be judged by the working condition to SPM
Go out the working frequency that SPM is presently in, for the entrance work of control IGBT pipes and/or low power consumption switch element
Make state, it is ensured that entering only low power consumption switch element under low frequency must make IGBT pipes enter work shape under working condition, high frequency
State.
Specifically, Fig. 4 shows the working frequency of detection SPM according to an embodiment of the invention
Schematic diagram.
As shown in figure 4, in SPM 4100 according to an embodiment of the invention, exporting gating circuit 4400
Power positive end VCC ends as low-pressure area power supply the anode VDD, VDD of the SPM 4100 be generally 15V.
The first input end HIN1 of the output gating circuit 4400 is used as bridge in the U phases of the SPM 4100
Arm input UHIN；It is described output gating circuit 4400 the second input HIN2 as the SPM 4100 V
Bridge arm input VHIN in phase；3rd input HIN3 of the output gating circuit 4400 is used as the SPM
Bridge arm input WHIN in 4100 W phases；4th input LIN1 of the output gating circuit 4400 is used as the intelligent work(
Bridge arm input ULIN under the U phases of rate module 4100；5th input LIN2 of the output gating circuit 4400 is as described
Bridge arm input VLIN under the V phases of SPM 4100；6th input LIN3 of the output gating circuit 4400 makees
For bridge arm input WLIN under the W phases of the SPM 4100.
Meanwhile, the 7th output end ITRIP of the output gating circuit 4400 and the output gating circuit 4400 U
Phase low reference voltage end UN, the output gating circuit 4400 V phase low reference voltages end VN, the output gating circuit 4400
W phase low reference voltages end WN, one end of sampling resistor 4301 is connected, and is used as the abnormal anti-of the SPM 4100
Present end ISO.
The power supply negative terminal GND of the output gating circuit 4400 is connected with the other end of the sampling resistor 4301, and makees
For the minimum voltage reference point N of the SPM 4100.
The U phases higher-pressure region power supply anode VB1 of the output gating circuit 4400 is connected with one end of electric capacity 4133, and
It is used as the U phases higher-pressure region power supply anode UVB of the SPM 4100；The U phases of the output gating circuit 4400
Higher-pressure region power supply negative terminal VS1 is connected with the other end of the electric capacity 4133, and is used as the U of the SPM 4100
Phase higher-pressure region power supply negative terminal UVS.
The V phases higher-pressure region power supply anode VB2 of the output gating circuit 4400 is connected with one end of electric capacity 4132, and
It is used as the V phases higher-pressure region power supply anode VVB of the SPM 4100；The V phases of the output gating circuit 4400
Higher-pressure region power supply negative terminal VS2 is connected with the other end of the electric capacity 4132, and is used as the V of the SPM 4100
Phase higher-pressure region power supply negative terminal VVS.
The W phases higher-pressure region power supply anode VB3 of the output gating circuit 4400 is connected with one end of electric capacity 4131, and
It is used as the W phases higher-pressure region power supply anode WVB of the SPM 4100；The W phases of the output gating circuit 4400
Higher-pressure region power supply negative terminal VS3 is connected with the other end of the electric capacity 4131, and is used as the W of the SPM 4100
Phase higher-pressure region power supply negative terminal WVS.
The maximum voltage reference end P of the output gating circuit 4400 is electric as the highest of the SPM 4100
Press reference point P.
In the structure shown in Fig. 4, with the concrete structure that sampling resistor 4301 is parameter sampling circuit, by intelligent power mould
The working frequency of block 4100 is converted to the voltage drop numerical value on sampling resistor 4301, and input is extremely joined after ITRIP port processings
Number comparison circuit is compared and judged.
Certainly, it will be understood by those skilled in the art that obviously can also be realized by the sampling to other specification
Identification to working frequency, is only illustrated by taking voltage sample as an example here, and the circuit characteristic parameter of switch module can have
A lot, such as when the working frequency change of SPM, curent change (the work electricity under high frequency may be directly resulted in
The operating current flowed under larger, low frequency is smaller), thus directly electric current can also be sampled.
3rd, switching control module
Embodiment one：Switching control module 306 only makes any IGBT in the case where receiving first signal
Pipe is in running order.
(1) module composition
According to one embodiment of present invention, it is preferable that switching control module 306 as shown in Figure 3A can include：Open
Powered-down road, is connected to the frequency detection module and signal source, for being turned in the case where receiving first signal, with
Make the source ground, and disconnected in the case where receiving the secondary signal, so that the signal source is exported to shape
State controls circuit；The state control circuit, the control end of the state control circuit is connected to the signal source and described opened
Between powered-down road, in the case of being turned in the on-off circuit, control any IGBT pipes in running order, and
In the case where the on-off circuit ends, control the low power consumption switch element in running order.
In the technical scheme, by setting on-off circuit, the working frequency change of SPM is reflected into shape
The input signal change of state control circuit, so as to the working condition of accurate control IGBT pipes and low power consumption switch element.
(2) circuit structure
Corresponding to the SPM shown in Fig. 4, Fig. 5 shows power consumption control according to an embodiment of the invention
The concrete structure schematic diagram of circuit.
As shown in figure 5, in power control circuit according to an embodiment of the invention, above-mentioned frequency detection module
304 are specifically made up of voltage comparator 4502, and the positive input terminal of the voltage comparator 4502 is received from the ITRIP shown in Fig. 4
Sampled voltage, the preset voltage value of negative input end receiving voltage source input of port, and by comparative result input by on-off circuit
3062 and state control circuit 3064 constitute switching control module 306.
Specifically, on-off circuit 3062 can be connected to voltage comparator 4502 for the metal-oxide-semiconductor shown in Fig. 5, its grid
Output end.When SPM 4100 is in high frequency, the positive input terminal voltage of voltage comparator 4502 is higher than negative input end
Voltage, makes voltage comparator 4502 export high level, metal-oxide-semiconductor 3062 and turns on；When SPM 4100 is in low frequency, electricity
Press the positive input terminal voltage of comparator 4502 to be less than negative input end voltage, voltage comparator 4502 is exported low level, metal-oxide-semiconductor
3062 cut-offs.
When metal-oxide-semiconductor 3062 is turned on, the current signal source for being connected to VCC ends is grounded, then state control circuit 3064 is defeated
Enter for 0V；When metal-oxide-semiconductor 3062 ends, above-mentioned current signal source directly inputs state control circuit 3064.
For state control circuit 3064, its concrete structure is also possible to, with a variety of situations, carry out separately below specifically
It is bright.
Embodiment one
Fig. 6 A are a kind of structural representations of embodiment of embodiment illustrated in fig. 5.
As shown in Figure 6A, a preferred embodiment of the invention, the state control circuit 3064 includes：Simulation
Switch, the analog switch includes：Control piece, is connected to the signal source (than current signal source described above) and the switch
Between circuit 3062, the first switching signal is generated in the case where the on-off circuit 3062 is turned on, in the on-off circuit
The second switching signal is generated in the case of 3062 disconnections；By control, described one end by control is connected to the switch module pair
The signal input part answered, the other end by control is connected to the first drive in the case where receiving first switching signal
Move circuit 4409, the second drive circuit 4410 is connected in the case where receiving second switching signal；Wherein, described
One drive circuit 4409 to any IGBT pipes 4121 for being driven, second drive circuit 4410 is used for described
Low power consumption switch element 4111 is driven.
In the technical scheme, independent drive circuit can be respectively adopted IGBT pipes 4121 and low-power consumption are opened to realize
The driving of element 4111 is closed, thus can be by signal input part HIN1 and the first drive circuit 4409 or the second drive circuit
4410 connection control, so that it is guaranteed that when SPM 4100 is under different operating frequency, can accurately switch to
Corresponding drive circuit, to drive IGBT pipes 4121 or low power consumption switch element 4111 to enter working condition.
When IGBT pipes 4121 and low power consumption switch element 4111 are using independent drive circuit, due to low power consumption switch member
Driving voltage and electric current needed for part 4111 is smaller (relative to IGBT pipes 4121), thus corresponding second drive circuit 4410
Driving force can be smaller, internal the size of driving element can also be smaller, so as to help to reduce the second drive circuit
4410 area occupied, reduces the production cost of SPM 4100.
Embodiment two
Fig. 6 B are the structural representations of another embodiment of embodiment illustrated in fig. 5.
As shown in Figure 6B, according to another preferred embodiment of the present invention, the state control circuit 3064 includes：Mould
Intend switch, the analog switch includes：Control piece, is connected to the signal source (than current signal source described above) and described opens
Between powered-down road 3062, the 3rd switching signal is generated in the case where the on-off circuit 3062 is turned on, in the on-off circuit
The 4th switching signal is generated in the case of 3062 disconnections；By control, described one end by control is connected to drive circuit 4409 '
One end, the other end by control is connected to any IGBT pipes in the case where receiving the 3rd switching signal
4121st, it is connected to the low power consumption switch element 4111 in the case where receiving the 4th switching signal；Wherein, it is described to drive
The other end of dynamic circuit 4409 ' is connected to the corresponding signal input part of the switch module (HIN1 ports as shown in Figure 6B),
For being driven to any IGBT pipes 4121 or the low power consumption switch element 4111.
In the technical scheme, IGBT pipes 4121 and low power consumption switch element 4111 can also use same one drive circuit
4409 ' are driven, then can pass through the company to IGBT pipes 4121 or low power consumption switch element 4111 and the drive circuit 4409 '
Control is connect, so that it is guaranteed that when SPM 4100 is under different operating frequency, can accurately switch to corresponding logical
Disconnected device, to drive IGBT pipes 4121 or low power consumption switch element 4111 to enter working condition.
(3) integrated circuit structure
Fig. 6 C are the structural representations of the corresponding SPM of embodiment illustrated in fig. 5.
As shown in Figure 6 C, each IGBT pipes in SPM 4100 can be directed to using reality as shown in Figure 6A
Mode is applied, power consumption control is realized；Certainly, it will be understood by those skilled in the art that here using the embodiment party shown in Fig. 6 A
Formula is only used for illustrating, it is clear that can use other either types, than embodiment as shown in Figure 6B etc., can equally use
In power consumption control of the realization to SPM 4100.
Specifically, the structure of the output gating circuit 4400 in the SPM 4100 shown in Fig. 6 C can be：
The anode of voltage source 4401 is connected with the negative terminal of voltage comparator 4402, the anode of the voltage comparator 4402 with
The ITRIP ends of the output gating circuit 4400 are connected, the output end of the voltage comparator 4402 and the grid of NMOS tube 4404
Extremely it is connected, the substrate of the NMOS tube 4404 is connected with source electrode and is connected to one end of resistance 4406, the NMOS tube 4404
Drain electrode be connected with the input of the anode of current source 4403, one end of electric capacity 4405, NOT gate 4407, the current source 4403 bear
The VCC ends of the termination output gating circuit 4400, the other end phase of the other end of the resistance 4406 and the electric capacity 4405
Connect and be connected to GND ends, the output end of the NOT gate 4407 is used as the control end of analog switch 4408, the analog switch 4408
Fixing end with it is described output gating circuit 4400 HIN1 ends be connected, the high-level strobe end of the analog switch 4408 and UH
The input of drive circuit 4409 is connected, the low level gating end of the analog switch 4408 and the input of UH drive circuits 4410
End is connected, and the low-pressure area power supply anode of the UH drive circuits 4409 and the UH drive circuits 4410 is selected with the output
The VCC ends of circuit passband 4400 are connected, the low-pressure area power supply of the UH drive circuits 4409 and the UH drive circuits 4410
Negative terminal is connected with the GND ends of the output gating circuit 4400, the UH drive circuits 4409 and the UH drive circuits 4410
Higher-pressure region power supply anode with it is described output gating circuit 4400 VB1 ends be connected, the UH drive circuits 4409 and institute
The higher-pressure region power supply negative terminal for stating UH drive circuits 4410 is connected with the VS1 ends of the output gating circuit 4400, the UH
The output end of drive circuit 4409 with it is described output gating circuit 4400 UHO1 ends be connected, the UH drive circuits 4410 it is defeated
The UHO2 ends for going out end with the output gating circuit 4400 are connected.
The anode of voltage source 4501 is connected with the negative terminal of voltage comparator 4502, the anode of the voltage comparator 4502 with
The ITRIP ends of the output gating circuit 4400 are connected, the output end of the voltage comparator 4502 and the grid of NMOS tube 4504
Extremely it is connected, the substrate of the NMOS tube 4504 is connected one end of simultaneously connecting resistance 4506, the drain electrode of the NMOS tube 4504 with source electrode
Anode, one end of electric capacity 4505, the input of NOT gate 4507 with current source 4503 are connected, and the negative terminal of the current source 4503 connects
The VCC ends of the output gating circuit 4400, the other end of the resistance 4506 is connected simultaneously with the other end of the electric capacity 4505
The GND ends of the output gating circuit 4400 are connect, the output end of the NOT gate 4507 is used as the control end of analog switch 4508, institute
The fixing end for stating analog switch 4508 is connected with the HIN2 ends of the output gating circuit 4400, the height of the analog switch 4508
Level gating end is connected with the input of VH drive circuits 4509, and low level gating end and the VH of the analog switch 4508 drive
The input of circuit 4510 is connected, and the low-pressure area power supply of the VH drive circuits 4509 and the VH drive circuits 4510 is just
End is connected with the VCC ends for exporting gating circuit 4400, the VH drive circuits 4509 and the VH drive circuits 4510
Low-pressure area power supply negative terminal is connected with the GND ends of the output gating circuit 4400, VH drive circuits 4509 and described
The higher-pressure region power supply anode of VH drive circuits 4510 is connected with the VB2 ends of the output gating circuit 4400, and the VH drives
The higher-pressure region power supply negative terminal of dynamic circuit 4509 and the VH drive circuits 4510 and the VS2 of the output gating circuit 4400
End is connected, and the output end of the VH drive circuits 4509 is connected with the VHO1 ends of the output gating circuit 4400, and the VH drives
The output end of dynamic circuit 4510 is connected with the VHO2 ends of the output gating circuit 4400.
The anode of voltage source 4601 is connected with the negative terminal of voltage comparator 4602, the anode of the voltage comparator 4602 with
The ITRIP ends of the output gating circuit 4400 are connected, the output end of the voltage comparator 4602 and the grid of NMOS tube 4604
Extremely it is connected, the substrate of the NMOS tube 4604 is connected one end of simultaneously connecting resistance 4606, the drain electrode of the NMOS tube 4604 with source electrode
Anode, one end of electric capacity 4605, the input of NOT gate 4607 with current source 4603 are connected, and the negative terminal of the current source 4603 connects
The VCC ends of the output gating circuit 4400, the other end of the resistance 4606 is connected simultaneously with the other end of the electric capacity 4605
The GND ends of the output gating circuit 4400 are connect, the output end of the NOT gate 4607 is used as the control end of analog switch 4608, institute
The fixing end for stating analog switch 4508 is connected with the HIN3 ends of the output gating circuit 4400, the height of the analog switch 4608
Level gating end is connected with the input of WH drive circuits 4609, and low level gating end and the WH of the analog switch 4608 drive
The input of circuit 4610 is connected, and the low-pressure area power supply of the WH drive circuits 4609 and the WH drive circuits 4610 is just
End is connected with the VCC ends for exporting gating circuit 4400, the WH drive circuits 4609 and the WH drive circuits 4610
Low-pressure area power supply negative terminal is connected with the GND ends of the output gating circuit 4400, WH drive circuits 4609 and described
The higher-pressure region power supply anode of VH drive circuits 4610 is connected with the VB3 ends of the output gating circuit 4400, and the WH drives
The higher-pressure region power supply negative terminal of dynamic circuit 4609 and the WH drive circuits 4610 and the VS3 of the output gating circuit 4400
End is connected, and the output end of the WH drive circuits 4609 is connected with the WHO1 ends of the output gating circuit 4400, and the WH drives
The output end of dynamic circuit 4610 is connected with the WHO2 ends of the output gating circuit 4400.
The anode of voltage source 4701 is connected with the negative terminal of voltage comparator 4702, the anode of the voltage comparator 4702
It is connected with the ITRIP ends of the output gating circuit 4400, output end and the NMOS tube 4704 of the voltage comparator 4702
Grid is connected, and the substrate of the NMOS tube 4704 is connected one end of simultaneously connecting resistance 4706, the leakage of the NMOS tube 4704 with source electrode
Pole is connected with the input of the anode of current source 4703, one end of electric capacity 4705, NOT gate 4707, the negative terminal of the current source 4703
The VCC ends of the output gating circuit 4400 are connect, the other end of the resistance 4706 is connected with the other end of the electric capacity 4705
And connect the GND ends of the output gating circuit 4400, the output end of the NOT gate 4707 as analog switch 4708 control end,
The fixing end of the analog switch 4708 is connected with the LIN1 ends of the output gating circuit 4400, the analog switch 4708
High-level strobe end is connected with the input of UL drive circuits 4709, and low level gating end and the UL of the analog switch 4708 drive
The input of dynamic circuit 4710 is connected, the low-pressure area power supply of the UL drive circuits 4709 and the UL drive circuits 4710
Anode is connected with the VCC ends of the output gating circuit 4400, the UL drive circuits 1 4709 and the UL drive circuits 2
4710 low-pressure area power supply negative terminal is connected with the GND ends of the output gating circuit 4400, the UL drive circuits 1
4709 output end with it is described output gating circuit 4400 ULO1 ends be connected, the output end of the UL drive circuits 2 4710 and
The ULO2 ends of the output gating circuit 4400 are connected.
The anode of voltage source 4801 is connected with the negative terminal of voltage comparator 4802, the anode of the voltage comparator 4802 with
The ITRIP ends of the output gating circuit 4400 are connected, the output end of the voltage comparator 4802 and the grid of NMOS tube 4804
Extremely it is connected, the substrate of the NMOS tube 4804 is connected one end of simultaneously connecting resistance 4806, the drain electrode of the NMOS tube 4804 with source electrode
Anode, one end of electric capacity 4805, the input of NOT gate 4807 with current source 4803 are connected, and the negative terminal of the current source 4803 connects
The VCC ends of the output gating circuit 4400, the other end of the resistance 4806 is connected simultaneously with the other end of the electric capacity 4805
The GND ends of the output gating circuit 4400 are connect, the output end of the NOT gate 4807 is used as the control end of analog switch 4808, institute
The fixing end for stating analog switch 4808 is connected with the LIN2 ends of the output gating circuit 4400, the height of the analog switch 4808
Level gating end is connected with the input of VL drive circuits 4809, and low level gating end and the VL of the analog switch 4808 drive
The input of circuit 4810 is connected, and the low-pressure area power supply of the VL drive circuits 4809 and the VL drive circuits 4810 is just
End is connected with the VCC ends for exporting gating circuit 4400, the VL drive circuits 4809 and the VL drive circuits 4810
Low-pressure area power supply negative terminal is connected with the GND ends of the output gating circuit 4400, the output of the VL drive circuits 4809
The VLO1 ends with the output gating circuit 4400 are held to be connected, the output end of the VL drive circuits 4810 is gated with the output
The VLO2 ends of circuit 4400 are connected.
The anode of voltage source 4901 is connected with the negative terminal of voltage comparator 4902, the anode of the voltage comparator 4902 with
The ITRIP ends of the output gating circuit 4400 are connected, the output end of the voltage comparator 4902 and the grid of NMOS tube 4904
Extremely it is connected, the substrate of the NMOS tube 4904 is connected one end of simultaneously connecting resistance 4906, the drain electrode of the NMOS tube 4904 with source electrode
Anode, one end of electric capacity 4905, the input of NOT gate 4807 with current source 4903 are connected, and the negative terminal of the current source 4903 connects
The VCC ends of the output gating circuit 4400, the other end of the resistance 4906 is connected simultaneously with the other end of the electric capacity 4905
The GND ends of the output gating circuit 4400 are connect, the output end of the NOT gate 4907 is used as the control end of analog switch 4908, institute
The fixing end for stating analog switch 4908 is connected with the LIN3 ends of the output gating circuit 4400, the height of the analog switch 4908
Level gating end is connected with the input of WL drive circuits 4909, and low level gating end and the WL of the analog switch 4808 drive
The input of circuit 4910 is connected, and the low-pressure area power supply of the WL drive circuits 4909 and the WL drive circuits 4910 is just
End is connected with the VCC ends for exporting gating circuit 4400, the WL drive circuits 4909 and the WL drive circuits 4910
Low-pressure area power supply negative terminal is connected with the GND ends of the output gating circuit 4400, the output of the WL drive circuits 4909
The WLO1 ends with the output gating circuit 4400 are held to be connected, the output end of the WL drive circuits 4910 is gated with the output
The WLO2 ends of circuit 4400 are connected.
The UHO1 ends are connected with the grid of IGBT pipes 4121, and the UHO2 ends are connected with the grid of NMOS tube 4111；Institute
State the P that the colelctor electrode of IGBT pipes 4121 is connected with the drain electrode of the high pressure NMOS pipe 4111 and connects the output gating circuit 4400
End, the emitter-base bandgap grading of the IGBT pipes 4121, which is connected with the substrate and source electrode of the high pressure NMOS pipe 4111 and connects the output, gates electricity
The VS1 ends on road 4400；The VHO1 ends are connected with the grid of IGBT pipes 4122, the VHO2 ends and the grid phase of NMOS tube 4112
Even；The colelctor electrode of the IGBT pipes 4122 is connected with the drain electrode of the high pressure NMOS pipe 4112 and connects the output gating circuit
4400 P ends, the emitter-base bandgap grading of the IGBT pipes 4122 is connected with the substrate and source electrode of the high pressure NMOS pipe 4112 and connects described defeated
Go out the VS2 ends of gating circuit 4400；The WHO1 ends are connected with the grid of IGBT pipes 4123, the WHO2 ends and NMOS tube 4113
Grid be connected；The colelctor electrode of the IGBT pipes 4123, which is connected with the drain electrode of the high pressure NMOS pipe 4113 and connects the output, to be selected
The P ends of circuit passband 4400, the emitter-base bandgap grading of the IGBT pipes 4123 is connected and connect with the substrate and source electrode of the high pressure NMOS pipe 4113
The VS3 ends of the output gating circuit 4400.
The ULO1 ends are connected with the grid of IGBT pipes 4124, and the ULO2 ends are connected with the grid of NMOS tube 4114；Institute
The colelctor electrode of IGBT pipes 4124 is stated to be connected with the drain electrode of the high pressure NMOS pipe 4114 and connect the output gating circuit 4400
VS1 ends, the emitter-base bandgap grading of the IGBT pipes 4124, which is connected with the substrate and source electrode of the high pressure NMOS pipe 4114 and connects the output, to be selected
The UN ends of circuit passband 4400；The VLO1 ends are connected with the grid of IGBT pipes 4125, the VLO2 ends and the grid of NMOS tube 4115
Extremely it is connected；The colelctor electrode of the IGBT pipes 4125, which is connected with the drain electrode of the high pressure NMOS pipe 4115 and connects the output, gates electricity
The VS2 ends on road 4400, the emitter-base bandgap grading of the IGBT pipes 4124 is connected with the substrate and source electrode of the high pressure NMOS pipe 4115 and meets institute
State the VN ends of output gating circuit 4400；The WLO1 ends are connected with the grid of IGBT pipes 4125, the WLO2 ends and NMOS tube
4115 grid is connected；The colelctor electrode of the IGBT pipes 4125 is connected with the drain electrode of the high pressure NMOS pipe 4115 and connects described defeated
Go out the VS3 ends of gating circuit 4400, the substrate and source electrode phase of the emitter-base bandgap grading of the IGBT pipes 4125 and the high pressure NMOS pipe 4115
Connect and connect the WN ends of the output gating circuit 4400.
(4) time judges
In any of the above-described technical scheme, it is preferable that also include：Time judgment module, is connected to the switching control mould
Block, for being more than default very first time threshold value in the duration for receiving first signal, or receives described second
In the case that the duration of signal is more than default second time threshold, it is allowed to which the switching control module is according to described first
Signal or the secondary signal control the working condition of the switch module, otherwise do not allow.
In the technical scheme, SPM when the working condition to itself is detected, by it is lasting when
Between judgement, ensure that SPM realizes corresponding switching really, so as to avoid instantaneous circuit characteristic from changing
(such as instantaneous overvoltage or excessively stream) may caused erroneous judgement, the peace contributed to during the degree of accuracy and use that lifting judges
Quan Xing.
Specifically, in the circuit structure shown in Fig. 6 C, such as the IGBT pipes 4121 for bridge arm in U phases, show by
The time judgment module of the compositions such as phase inverter 4407, electric capacity 4405 and resistance 4406.
So, as a kind of more upper describing mode, it is preferable that the time judgment module includes：Phase inverter is (such as
Phase inverter 4407 shown in Fig. 6 C), the switching control module (switching control module 306 as shown in Figure 3A) is connected to, is used
First signal transmitted in the switching control module or the secondary signal carry out anti-phase processing；Energy storage device
(electric capacity 4405 as shown in Figure 6 C), the anode of the energy storage device is connected to the input of the phase inverter and the switching control
Molding block, the situation for receiving low level first signal or the secondary signal in the switching control module
Under, the electric energy from particular signal source is stored, and when the duration for receiving first signal being more than default first
Between in the case of threshold value, to the phase inverter input high level signal；Power consuming devices (resistance 4406 as shown in Figure 6 C), connection
To the energy storage device and the switching control module, for receiving described the first of high level in the switching control module
In the case of signal or the secondary signal, the electric energy of the energy storage device storage, and continuing in the secondary signal are consumed
In the case that time is more than default second time threshold, to the phase inverter input low level signal.
In the technical scheme, by applying energy storage device so that the time-continuing process of the first signal or secondary signal can
Accurately reflect to storage of the energy storage device to electric energy or release process, and only electric energy be raised and lowered to certain threshold value it
Afterwards, just it is reflected as the change of level height.Meanwhile, based on the logic change in practical application, more phase inverters can be added,
To realize correct logic control.
Wherein, model that should be in advance to energy storage device and power consuming devices is chosen, to enable energy storage device to exist
After time span by very first time threshold value, by low level rise be high level, and by the second time threshold when
Between after length, low level is reduced to by high level.
(5) operation principle
Because the structure and parameter of three upper bridge arms is completely the same, three lower bridge arms structure and parameters are completely the same, and
And upper bridge arm and lower bridge arm are completely the same in gating principle, thus below by taking bridge arm in U phases as an example, illustrate the present invention's
Gate principle.
No matter the on off operating mode of six IGBT pipes 4121~4126 and six high pressure NMOS pipes 4111~4116
How, electric current always flows through from the resistance 4301, and produces pressure drop Vt at ITRIP ends, thus can be used for judging intelligent work(
The working frequency of rate module 4100.Furthermore, it is possible to which the pressure drop for remembering the voltage source 4401 is Vd.
1st, Vt is worked as<During Vd：
The voltage comparator 4402 exports low level, and the NMOS tube 4404 is ended, and the current source 4403 is described
Electric capacity 4405 charges, after a period of time, the voltage Vc of the electric capacity 4405 is more than the threshold voltage Vi of the NOT gate 4407, then
The NOT gate 4407 exports low level, and the analog switch 4408 gates low-pressure end, the HIN1 incoming UH drivings electricity of signal
Road 4410, after the UH drive circuits 4410 processing, in the output of UHO2 ends, controls the logical of the high pressure NMOS pipe 4111
It is disconnected.
2nd, Vt is worked as>During Vd：
The voltage comparator 4402 exports high level, and the NMOS tube 4404 is turned on, and the electric capacity 4405 is by described
Resistance 4406 discharges, after a period of time, the voltage Vc of the electric capacity 4405 is less than the threshold voltage Vi of the NOT gate 4407, then
The NOT gate 4407 exports high level, and the analog switch 4408 gates high-pressure side, the HIN1 incoming UH drivings electricity of signal
Road 4409, after the UH drive circuits 4409 processing, in the output of UHO1 ends, controls the break-make of the IGBT pipes 4121.
By the above-mentioned means, being realized for the on-off element of bridge arm in U phases：1) when the electric current for needing to flow through is smaller,
Gating switch speed but the less high pressure NMOS pipe of withstanding current capability, to reduce switching loss and system loss；2) needing
When the electric current to be flowed through is larger, gating has smearing but the larger IGBT pipes of withstanding current capability, to avoid high pressure NMOS pipe mistake
Stream punctures.
(6) parameter setting
Illustrate that the parameter of each key componentses is chosen below：
For general high pressure NMOS pipe, current capacity is in below 5A, and general IGBT tube currents ability can reach
More than 5A.Accordingly it is contemplated that when electric current is less than 5A, NMOS tube is gated, and when electric current is more than 5A, gating IGBT pipes.
The value of the resistance 4301 can be taken as 10m Ω, Vd=50mV.As the electric current Ir for flowing through the resistance 4301<During 5A,
ITRIP pressure drop Vi<Vd, makes the output of voltage comparator 4402 low level；As the electric current Ir for flowing through the resistance 4301>5A
When, ITRIP pressure drop Vi>Vd, makes the output of voltage comparator 4402 high level.
1st, when the voltage comparator 4402 exports low level, the NMOS tube 4404 is turned off, the current source 4403
Charged for the electric capacity 4405, the current value of the current source 4403 may be designed as Id=8 μ A, and the resistance of the resistance 4406 can
Rd=1.25k Ω are designed as, the capacitance of the electric capacity 4405 may be designed as Cd=1 μ F, and the threshold value for designing the NOT gate 4407 is
8V, then：
When the NMOS tube is in opening state, the pressure drop of the electric capacity 4405 and the pressure drop phase of the resistance 4406
Together, the μ A=0.01V ≈ 0 of pressure drop Vc=Rd × Id=1.25k Ω × 8, the thus after NMOS tube 4404 is turned off, the electric capacity
4405 voltage Vc and charging interval tc relation is about：
When Vc is charged to Vc=Vi：
Substitute into and calculate, obtain tc=1s, i.e., after 1s, the input of the NOT gate 4407 obtains high level signal, and its is defeated
Go out end output low level, so that the gating low level gating of the analog switch 4408 end, input signal drives into the UH
Circuit 2 4410 drives the high pressure NMOS pipe 4111.
2nd, when the voltage comparator 4402 exports high level, the NMOS tube 4404 is open-minded, and the electric capacity 4405 is passed through
Cross the NMOS tube 4404 to discharge by the resistance 4406, the voltage Vc of the electric capacity 4405 is up to Vcc=15V, and by
Saturation conduction state is in the NMOS tube 4404, its resistance can ignore, then the voltage of the electric capacity 4405 and during electric discharge
Between td relation be about：
When Vc discharges into Vc=Vi：
Substitute into and calculate, obtain td ≈ 0.8ms, i.e., after 0.8ms, the input of the NOT gate 4407 obtains low level letter
Number, its output end output high level, so that the gating high-level strobe of the analog switch 4408 end, input signal enters described
UH drive circuits 1 4409 drive the IGBT pipes 4121.
Therefore, after the electric current for flowing through the resistance 4301 is less than 5A and continues 1s, the SPM 4100 is selected
Logical high pressure NMOS pipe is used as on-off element, after the electric current for flowing through the resistance 4301 is more than 5A and continues 0.8ms, the intelligence
The gating IGBT pipes of power model 4100 are used as on-off element.
It should be noted that：The time for why being switched to high pressure NMOS pipe from IGBT pipes is longer, be because to ensure be
System comes into low current mode of operation, in case SPM is damaged caused by high pressure NMOS tube current scarce capacity；It
It is in order to ensure having increased in system power ability need so the time for being switched to IGBT pipes from high pressure NMOS pipe is extremely short
When, SPM just can provide current capacity enough on-off elements rapidly, it is ensured that system worked well.
Meanwhile, the structure of the UH drive circuits 4409 and the UH drive circuits 4410 can be made it is completely the same and and
Prior art is completely the same, considers for systematic function is improved, can also be by the under-voltage protection electricity of the UH drive circuits 4410
Pressure is made lower than the UH drive circuits 4409, because high pressure NMOS pipe only needs to lower supply voltage it is ensured that device
Saturation conduction, so that during gating high pressure NMOS pipe, SPM can be operated under lower supply voltage, for drop
Cost consideration, being sized for for the driving CMOS of the UH drive circuits 4410 is smaller than the UH drive circuits 4409, because high
Pressure NMOS tube only needs smaller current capacity with regard to that can control its on or off, so as to save the face of the UH drive circuits 4410
Product.
Embodiment two：Switching control module is in the case where receiving first signal while making any IGBT pipes
It is in running order with the low power consumption switch element.
(1) module composition
Fig. 7 shows the concrete structure schematic diagram of power control circuit according to another embodiment of the invention.
As shown in fig. 7, according to one embodiment of present invention, it is preferable that switching control module 306 as shown in Figure 3A can
With including：Voltage follower circuit 3062 ', is connected to the frequency detection module (frequency detection module 304 as shown in Figure 3A)
With signal source (Fig. 7, which is shown, is connected to the current source at VCC ends), for exporting in the case where receiving first signal
One voltage, and export second voltage in the case where receiving the secondary signal；State control circuit 3064 ', is connected to
The voltage follower circuit 3062 ', in the case of being in the first number range in the first voltage, is controlled described any
IGBT pipes 4121 and the low power consumption switch element 4111 are in running order, and are in second value in the second voltage
In the range of in the case of, control the low power consumption switch element 4111 in running order；Wherein, first number range is
Refer to and be more than the first preset voltage value, the second value scope refers to be more than the second preset voltage value and less than or equal to described the
One preset voltage value.
In the technical scheme, (the first signal is received) by the regulation and control to output voltage, i.e., under high frequency defeated
Go out under first voltage, low frequency and (receive secondary signal) output second voltage, the working frequency of SPM can be become
Change the numerical value change for being reflected into output voltage, then judge with reference to the number range residing for output voltage, you can accurate control
The working condition of IGBT pipes 4121 and low power consumption switch element 4111.
(2) circuit structure
Fig. 8 is a kind of structural representation of embodiment of embodiment illustrated in fig. 7.
As shown in figure 8, a preferred embodiment of the invention, the voltage follower circuit 3062 ' shown in Fig. 7 is wrapped
Include：First resistor R1 and second resistance R2, the first resistor R1 and the second resistance R2 be sequentially connected in series in signal source VCC and
Between ground；Switching device 5200 and 3rd resistor R3, after the switching device 5200 is connected with the 3rd resistor R3, are parallel to
The two ends of the second resistance R2, the switching device 5200 is additionally coupled to the frequency detection module (by the electricity shown in figure
Comparator 4502 and unshowned voltage sampling circuit is pressed to constitute), for being turned in the case where receiving first signal,
And end in the case where receiving the secondary signal.
In the technical scheme, pass through the on or off of controlling switch device 5200 so that 3rd resistor R3 work
State changes, i.e., when switching device 5200 is turned on, after second resistance R2 and 3rd resistor R3 is in parallel, is series at the first electricity
Hinder R1；And during the cut-off of switching device 5200, only connected by first resistor R1 and second resistance R2, so as to control the number of output voltage
Value changes.
A preferred embodiment of the invention, the state control circuit 3064 ' includes：First voltage comparator
501, the first input end (being positive input terminal shown in figure) of the first voltage comparator 501 is connected to the first resistor R1
Common port, the second input (being negative input end shown in figure) described first predeterminated voltage of input with the second resistance R2
Value, in the case of being in the first number range in the first voltage, exports the first enabling signal；Second voltage comparator
502, the first input end (being positive input terminal shown in figure) of the second voltage comparator 502 is connected to the first resistor R1
Common port, the second input (being negative input end shown in figure) described second predeterminated voltage of input with the second resistance R2
Value, in the case of being in second value scope in the second voltage, exports the second enabling signal；First logic circuit
503, the first input end of first logic circuit 503 is connected to the output end of the first voltage comparator 501, second
Input is connected to the corresponding signal input part of the switch module (being HIN1 ports shown in figure), output end and is connected to first
Drive circuit 4409, in the case where receiving first enabling signal, by the signal from the signal input part
Export to first drive circuit 4409；Second logic circuit 504, the first input end of second logic circuit 504 connects
The output end of the second voltage comparator 502, the second input is connected to be connected to the signal input part, output end and be connected to
Second drive circuit 4410, in the case where receiving second enabling signal, by from the signal input part
Signal output is to second drive circuit 4410；Wherein, first drive circuit 4409 is used to manage any IGBT
4121 are driven, second drive circuit 4410 is used to be driven the low power consumption switch element 4111.
In the technical scheme, independent drive circuit can be respectively adopted IGBT pipes 4121 and low-power consumption are opened to realize
The driving of element 4111 is closed, thus can control whether to input a signal into the signal output at end to the first drive circuit 4409 or the
Two drive circuits 4410, so that it is guaranteed that when SPM is under different operating frequency, can be defeated by signal exactly
Enter the signal output at end to corresponding drive circuit, to drive IGBT pipes 4121 or low power consumption switch element 4111 to enter work shape
State.
Similarly, when IGBT pipes 4121 and low power consumption switch element 4111 are using independent drive circuit, due to low work(
Driving voltage and electric current needed for consumption switch element 4111 is smaller (relative to IGBT pipes), thus corresponding second drive circuit
4410 driving force can be smaller, internal the size of driving element can also be smaller, driven so as to help to reduce second
The area occupied of circuit 4410, reduces the production cost of SPM.
(3) integrated circuit structure
Fig. 9 A are the structural representations of the corresponding SPM of embodiment illustrated in fig. 7.
As shown in Figure 9 A, it is assumed that the lower bridge arm of U phases, V phases, W phases only in SPM is carried out based on the present invention
Power consumption control, illustrated with the integrated circuit structure to the SPM in embodiments of the invention two.
Certainly, those skilled in the art should understand that be：The either upper bridge arm or lower bridge arm in SPM
In any number of IGBT pipe, can use technical scheme, realize effective power consumption control.
So, the structure based on the SPM shown in Fig. 9 A is as follows：
The power positive end VCC ends for exporting gating circuit 4400 power electricity as the low-pressure area of the SPM 4100
Source anode VDD, VDD are generally 15V.
The first input end HIN1 of the output gating circuit 4400 is used as bridge in the U phases of the SPM 4100
Arm input UHIN；It is described output gating circuit 4400 the second input HIN2 as the SPM 4100 V
Bridge arm input VHIN in phase；3rd input HIN3 of the output gating circuit 4400 is used as the SPM
Bridge arm input WHIN in 4100 W phases；4th input LIN1 of the output gating circuit 4400 is used as the intelligent work(
Bridge arm input ULIN under the U phases of rate module 4100；5th input LIN2 of the output gating circuit 4400 is as described
Bridge arm input VLIN under the V phases of SPM 4100；6th input LIN3 of the output gating circuit 4400 makees
For bridge arm input WLIN under the W phases of the SPM 4100；7th input of the output gating circuit 4400
ITRIP as the SPM 4100 switching signal input ISO；The power supply of the output gating circuit 4400 is born
GND is held as the low-pressure area power supply negative terminal COM of the SPM 4100.
The U phases higher-pressure region power supply anode VB1 of the output gating circuit 4400 is connected with one end of electric capacity 4133, and
It is used as the U phases higher-pressure region power supply anode UVB of the SPM 4100；The U phases of the output gating circuit 4400
Higher-pressure region power supply negative terminal VS1 is connected with the other end of the electric capacity 4133, and is used as the U of the SPM 4100
Phase higher-pressure region power supply negative terminal UVS.
The V phases higher-pressure region power supply anode VB2 of the output gating circuit 4400 is connected with one end of electric capacity 4132, and
It is used as the V phases higher-pressure region power supply anode VVB of the SPM 4100；The V phases of the output gating circuit 4400
Higher-pressure region power supply negative terminal VS2 is connected with the other end of the electric capacity 4132, and is used as the V of the SPM 4100
Phase higher-pressure region power supply negative terminal VVS.
The W phases higher-pressure region power supply anode VB3 of the output gating circuit 4400 is connected with one end of electric capacity 4131, and
It is used as the W phases higher-pressure region power supply anode WVB of the SPM 4100；The W phases of the output gating circuit 4400
Higher-pressure region power supply negative terminal VS3 is connected with the other end of the electric capacity 4131, and is used as the W of the SPM 4100
Phase higher-pressure region power supply negative terminal WVS.
The UHO ends of the output gating circuit 4400 are connected with the grid of IGBT pipes 4121, the collection of the IGBT pipes 4121
Electrode is connected with the negative electrode of FRD pipes 4111 and connects the ceiling voltage point P ends of the SPM 4100, and the IGBT is managed
4121 emitter-base bandgap grading is connected with the anode of the FRD pipes 4111 and connects the UVS ends of the SPM 4100.
The VHO ends of the output gating circuit 4400 are connected with the grid of IGBT pipes 4122, the collection of the IGBT pipes 4122
Electrode is connected with the negative electrode of FRD pipes 4112 and connects the ceiling voltage point P ends of the SPM 4100, and the IGBT is managed
4122 emitter-base bandgap grading is connected with the anode of the FRD pipes 4112 and connects the VVS ends of the SPM 4100.
The WHO ends of the output gating circuit 4400 are connected with the grid of IGBT pipes 4123, the collection of the IGBT pipes 4123
Electrode is connected with the negative electrode of FRD pipes 4113 and connects the ceiling voltage point P ends of the SPM 4100, and the IGBT is managed
4123 emitter-base bandgap grading is connected with the anode of the FRD pipes 4113 and connects the WVS ends of the SPM 4100.
The ULO1 ends of the SPM 4100 are connected with the grid of IGBT pipes 4124, the SPM
4100 ULO2 ends are connected with the grid of NMOS tube 4114；The colelctor electrode of the IGBT pipes 4124 and the high pressure NMOS pipe 4114
Drain electrode be connected and connect the UVS ends of the SPM 4100, emitter-base bandgap grading and the high pressure NMOS of the IGBT pipes 4124
The substrate of pipe 4114 is connected with source electrode and connects the UN ends of the SPM 4100.
The VLO1 ends of the SPM 4100 are connected with the grid of IGBT pipes 4125, the SPM
4100 VLO2 ends are connected with the grid of NMOS tube 4115；The colelctor electrode of the IGBT pipes 4125 and the high pressure NMOS pipe 4115
Drain electrode be connected and connect the VVS ends of the SPM 4100, emitter-base bandgap grading and the high pressure NMOS of the IGBT pipes 4124
The substrate of pipe 4115 is connected with source electrode and connects the VN ends of SPM 4100.
The WLO1 ends of the SPM 4100 are connected with the grid of IGBT pipes 4125, the SPM
4100 WLO2 ends are connected with the grid of NMOS tube 4115；The colelctor electrode of the IGBT pipes 4125 and the high pressure NMOS pipe 4115
Drain electrode be connected and connect the WVS ends of the SPM 4100, emitter-base bandgap grading and the high pressure NMOS of the IGBT pipes 4125
The substrate of pipe 4115 is connected with source electrode and connects the WN ends of the SPM 4100.
Fig. 9 B are the structural representations for exporting gating circuit in the SPM shown in Fig. 9 A.
As shown in Figure 9 B, as one kind more preferred embodiment, it is defeated in the SPM 4100 in Fig. 9 A
Going out the concrete structure of gating circuit 4400 (by taking the lower bridge arm of U phases, V phases and W phases as an example) can be：
The low-pressure area power supply anode VCC of the output gating circuit 4400 and one end of resistance 5202, UL driving electricity
The low-pressure area power supply anode on road 5014, low-pressure area power supply anode, the WL drive circuits 5016 of VL drive circuits 5015
Low-pressure area power supply anode be connected.
The other end of the resistance 5202 and the positive input terminal of voltage comparator 5111, the positive input of voltage comparator 5113
End, the positive input terminal of voltage comparator 5121, the positive input terminal of voltage comparator 5123, the positive input of voltage comparator 5131
End, the positive input terminal of voltage comparator 5133, one end of resistance 5201, one end of resistance 5203 are connected.
The anode of voltage source 5110 is connected with the negative terminal of the voltage comparator 5111, and the negative terminal of the voltage source 5110 connects
The low-pressure area potential minimum reference point GND of the output gating circuit 4400；The anode of voltage source 5112 and the voltage ratio compared with
The negative terminal of device 5113 is connected, and the negative terminal of the voltage source 5112 connects the low-pressure area potential minimum ginseng of the output gating circuit 4400
Examination point GND；The output end of the voltage comparator 5111 is connected with 5,115 1 inputs of door, described another with door 5115
Input is connected with the ULIN ends of the output gating circuit 4400；The output end of the voltage comparator 5113 with door 5114
One input is connected, described to be connected with another input of door 5114 with the ULIN ends of the output gating circuit 4400；Institute
State and be connected with the output end of door 5115 with the input of the UL drive circuits 5014, the output end of the UL drive circuits 5014
It is connected with the ULO1 ends of the output gating circuit 4400；The output end and the UL drive circuits 5024 with door 5114
Input is connected, and the output end of the UL drive circuits 5024 is connected with the ULO2 ends of the output gating circuit 4400.
The anode of voltage source 5120 is connected with the negative terminal of the voltage comparator 5121, and the negative terminal of the voltage source 5120 connects
The low-pressure area potential minimum reference point GND of the output gating circuit 4400；The anode of voltage source 5122 and the voltage ratio compared with
The negative terminal of device 5123 is connected, and the negative terminal of the voltage source 5122 connects the low-pressure area potential minimum ginseng of the output gating circuit 4400
Examination point GND；The output end of the voltage comparator 5121 is connected with 5,125 1 inputs of door, described another with door 5125
Input is connected with the VLIN ends of the output gating circuit 4400；The output end of the voltage comparator 5123 with door
5124 1 inputs are connected, the VLIN ends phase of another input and the output gating circuit 4400 with door 5124
Even；It is described to be connected with the output end of door 5125 with the input of the VL drive circuits 5015, the VL drive circuits 5015
Output end is connected with the VLO1 ends of the output gating circuit 4400；The output end and the VL drive circuits with door 5124
5025 input is connected, the output end of the VL drive circuits 5025 and the VLO2 ends phase of the output gating circuit 4400
Even.
The anode of voltage source 5130 is connected with the negative terminal of the voltage comparator 5131, and the negative terminal of the voltage source 5130 connects
The low-pressure area potential minimum reference point GND of the output gating circuit 4400；The anode of voltage source 5132 and the voltage ratio compared with
The negative terminal of device 5133 is connected, and the negative terminal of the voltage source 5132 connects the low-pressure area potential minimum ginseng of the output gating circuit 4400
Examination point GND；The output end of the voltage comparator 5131 is connected with 5,135 1 inputs of door, described another with door 5135
Input is connected with the WLIN ends of the output gating circuit 4400；The output end of the voltage comparator 5133 with door 5134
One input is connected, described to be connected with another input of door 5134 with the WLIN ends of the output gating circuit 4400；Institute
State and be connected with the output end of door 5135 with the input of the WL drive circuits 5016, the output end of the WL drive circuits 5016
It is connected with the WLO1 ends of the output gating circuit 4400；The output end and the WL drive circuits 5026 with door 5134
Input is connected, and the output end of the WL drive circuits 5026 is connected with the WLO2 ends of the output gating circuit 4400.
The drain electrode of NMOS tube 5200 is connected with the other end of the resistance 5203, the substrate and source electrode of the NMOS tube 5200
It is connected and connects the other end of the resistance 5201, and meets GND；The grid of the NMOS tube 5200 is defeated with voltage comparator 5300
Go out end to be connected, the positive input terminal of the voltage comparator 5300 is connected to current source 5400, negative input end and is connected to port
ITRIP。
The UL drive circuits 5014, the low-pressure area power supply negative terminal of UL drive circuits 5024, the VL drive circuits
5015th, the low-pressure area power supply negative terminal of VL drive circuits 5025, the WL drive circuits 5016, WL drive circuits 5026 it is low
Nip power supply negative terminal is connected, and meets GND.
(4) operation principle
Because upper bridge arm U, V, W three-phase structure is identical and parameter setting is completely the same, and lower bridge arm U, V, W three-phase
Structure is identical and parameter setting is completely the same, is only illustrated herein by taking bridge arm under U phases as an example：
1st, when SPM 4100 is operated in high frequency, ITRIP ports input high level, voltage comparator 5300 are defeated
Go out low level, the NMOS tube 5200 is turned off, if the resistance of the resistance 5201 is R1, the resistance of the resistance 5202 be R2,
The resistance of the resistance 5203 is R3, then the voltage VA of A points is in Fig. 9 B：
It is assumed that the magnitude of voltage of the voltage source 5110 is V1, the magnitude of voltage of the voltage source 5112 is V2, designs V1 and V2
Value, make V1<VA、V2<VA, so that the voltage comparator 5111 and the output high level of voltage comparator 5113, ULIN's
Signal is by described with after door 5115 and described and door 5114, distinguishing described with door 5115 and the output end with door 5114
Produce and ULIN identical signals, to control the UL drive circuits 5014 and the UL drive circuits 5024 respectively.
2nd, when SPM 4100 is operated in low frequency, ITRIP ports input low level, voltage comparator 5300 are defeated
Go out high level, the NMOS tube 5200 is turned on, then the voltage VA of A points is in Fig. 9 B：
V1 and V2 value is designed, makes V1>VA、V2<VA so that the voltage comparator 5111 output low level and it is described
Voltage comparator 5113 exports high level, now, the signal regardless of ULIN, the described and constant output low level of door 5115,
And the output with door 5114 is then synchronous with ULIN signals, the input perseverance of the UL drive circuits 5014 is low level, makes institute
It is low level to state the output of UL drive circuits 5014 also correspondingly permanent, therefore the permanent shut-off of the IGBT pipes 4124, and the UL drives
The output of dynamic circuit 5024 is made the high pressure NMOS pipe 4114 ensure normal break-make in the presence of ULIN by ULIN controls.
Wherein, the circuit structure of the UL drive circuits 5024 can be complete with the circuit structures of the UL drive circuits 5014
It is exactly the same；But because the gate capacitance of the high pressure NMOS pipe 4114 will be generally less than the gate capacitance of the IGBT pipes 4124, therefore
For the consideration of cost is reduced, the fan-out capability of the UL drive circuits 5024 can also be suitably reduced, institute can be equally controlled
State break-make control of the high pressure NMOS pipe 4114 under ULIN effects.
(5) parameter is selected
V1, which is contemplated that, is designed as 11V, and V2, which is contemplated that, may be designed to 9V, and R1, which is contemplated that, is designed as 130k Ω, and R2, which is contemplated that, to be set
20k Ω are calculated as, R3, which is contemplated that, is designed as 58k Ω, then,
When ITRIP ends input high level, VA=13V meets VA>V1, VA>V2；
When ITRIP ends input low level, VA=10V meets VA<V1, VA>V2.
Because R1, R2, R3 value are all very big, no matter the NMOS tube 5200 is opened or turned off, and flows through the resistance branch
The electric current on road is all μ A ranks, the quiescent dissipation of system is controlled in very low level；Meanwhile, V1 and V2 value compared with
Greatly, it is in order to avoid ground line current noise causes false triggering.
Certainly, value here be only it is a kind of more preferred embodiment, it will be understood by those skilled in the art that
Other numerical value can be selected according to actual conditions and demand, to realize identical control effect.
The invention also provides a kind of SPM, including the power consumption control as any one of above-mentioned technical scheme
Circuit processed.
The invention also provides a kind of frequency-conversion domestic electric appliances, including the SPM as described in above-mentioned technical scheme, such as
Convertible frequency air-conditioner, frequency conversion refrigerator, variable-frequency washing machine etc..
Be described in detail technical scheme above in association with accompanying drawing, the present invention propose a kind of power control circuit,
A kind of SPM and a kind of frequency-conversion domestic electric appliances, it is possible to achieve following technique effect：
When SPM needs to produce larger driving current, SPM, which can be provided, to be had enough
The on-off element of current capacity, because when system needs big driving current, it is always desirable to quickly obtain enough energy and right
Power consumption concern is less, even if so switching loss now is higher, also having no effect on overall system performance evaluation.
When SPM needs to produce less driving current, SPM can provide switching loss compared with
Small on-off element, because when system needs less driving current, it is always desirable to obtain less energy consumption, so, in electric current
In the case that ability meets system requirements, smaller switching loss can improve overall system performance evaluation.
In low current, SPM of the invention can switch to the smaller low current of only switching loss in time
The pattern of ability on-off element work, can effectively reduce the energy consumption of SPM；And in high current, intelligence of the invention
Power model can switch to the on-off element with larger current ability and the break-make member with smaller current ability in time again
The pattern that part works simultaneously, it is to avoid the element damage caused by electric current is excessive, effectively improves the robustness of SPM,
Avoid SPM because pursue low energy consumption and caused by excessively stream puncture wait negatively affect so that the synthesis of SPM
Performance is improved.
Simultaneously as on-off element during using high pressure NMOS pipe as low current, can directly using high pressure NMOS pipe from
The parasitic diode of body makes lower bridge arm to reuse FRD pipes, in terms of on-off element, the present invention as anti-paralleled diode
Compared with prior art, cost increase is very limited；In addition, switching different break-make members according to different current capacity demands
Part, harsh switching characteristic requirement is no longer proposed to high current on-off element, the small of SPM can be realized with a low cost
Small energy consumption under electric current, makes it possible the civil nature of low power-consumption intelligent power model.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (11)
1. a kind of power control circuit, it is characterised in that including：
Low power consumption switch element, is connected in parallel to any IGBT pipes in SPM, to constitute switch module；
Frequency detection module, is connected to the SPM, the working frequency for detecting the SPM, and
The first signal is exported in the case of being high frequency in the working frequency, be low frequency in the working frequency in the case of export second
Signal；
Switching control module, is connected to the switch module and the frequency detection module, for receiving first letter
In the case of number, only make any IGBT pipes or while any IGBT pipes and the low power consumption switch element is in work
Make state, and in the case where receiving the secondary signal, only make the low power consumption switch element in running order；
If the switching control module is in the case where receiving first signal while making any IGBT pipes and described
Low power consumption switch element is in running order, then the switching control module includes：
Voltage follower circuit, is connected to the frequency detection module and signal source, for receiving the feelings of first signal
First voltage is exported under condition, and second voltage is exported in the case where receiving the secondary signal；
State control circuit, is connected to the voltage follower circuit, for being in the first number range in the first voltage
In the case of, control any IGBT pipes and the low power consumption switch element in running order, and in the second voltage
In the case of in the range of second value, control the low power consumption switch element in running order；
Wherein, first number range refers to be more than the first preset voltage value, and the second value scope refers to be more than second
Preset voltage value and less than or equal to first preset voltage value.
2. power control circuit according to claim 1, it is characterised in that the frequency detection module includes：
Parameter sampling circuit, is connected to the switch module, is sampled for the circuit characteristic parameter to the switch module；
Parameter comparison circuit, is connected to the parameter sampling circuit, and the numerical value for the circuit characteristic parameter in sampling is more than pre-
Judge that the working frequency judges the working frequency as low frequency as high frequency, otherwise during setting parameter value.
3. power control circuit according to claim 1, it is characterised in that if the switching control module is receiving
Manage only any IGBT in the case of stating the first signal in running order, then the switching control module includes：
On-off circuit, is connected to the frequency detection module and signal source, in the case where receiving first signal
Conducting, so that the source ground, and disconnected in the case where receiving the secondary signal, so that the signal source is defeated
Go out to state control circuit；
The state control circuit, the control end of the state control circuit be connected to the signal source and the on-off circuit it
Between, in the case of being turned in the on-off circuit, control any IGBT pipes in running order, and opened described
In the case of powered-down road cut-off, control the low power consumption switch element in running order.
4. power control circuit according to claim 3, it is characterised in that the state control circuit includes：
Analog switch, the analog switch includes：
Control piece, is connected between the signal source and the on-off circuit, is generated in the case where the on-off circuit is turned on
First switching signal, the on-off circuit disconnect in the case of generate the second switching signal；
By control, described one end by control is connected to the corresponding signal input part of the switch module, described by the another of control
One end is connected to the first drive circuit in the case where receiving first switching signal, is receiving the second switching letter
The second drive circuit is connected in the case of number；
Wherein, first drive circuit be used for any IGBT pipes are driven, second drive circuit be used for pair
The low power consumption switch element is driven.
5. power control circuit according to claim 3, it is characterised in that the state control circuit includes：
Analog switch, the analog switch includes：
Control piece, is connected between the signal source and the on-off circuit, is generated in the case where the on-off circuit is turned on
3rd switching signal, the 4th switching signal of generation in the case where the on-off circuit disconnects；
By control, described one end by control is connected to one end of drive circuit, and the other end by control is receiving
Any IGBT pipes are connected in the case of stating the 3rd switching signal, are connected in the case where receiving the 4th switching signal
It is connected to the low power consumption switch element；
Wherein, the other end of the drive circuit is connected to the corresponding signal input part of the switch module, for described
One IGBT is managed or the low power consumption switch element is driven.
6. power control circuit according to claim 1, it is characterised in that the voltage follower circuit includes：
First resistor and second resistance, the first resistor and the second resistance are sequentially connected in series between signal source and ground；
Switching device and 3rd resistor, after the switching device is connected with the 3rd resistor, are parallel to the second resistance
Two ends, the switching device is additionally coupled to the frequency detection module, for being cut in the case where receiving first signal
Only, and in the case where receiving the secondary signal turn on.
7. power control circuit according to claim 6, it is characterised in that the state control circuit includes：
First voltage comparator, the first input end of the first voltage comparator is connected to the first resistor and described second
The common port of resistance, the second input input first preset voltage value, for being in the first numerical value in the first voltage
In the case of scope, the first enabling signal is exported；
Second voltage comparator, the first input end of the second voltage comparator is connected to the first resistor and described second
The common port of resistance, the second input input second preset voltage value, for being in second value in the second voltage
In the case of scope, the second enabling signal is exported；
First logic circuit, the first input end of first logic circuit is connected to the output of the first voltage comparator
End, the second input are connected to the corresponding signal input part of the switch module, output end and are connected to the first drive circuit, are used for
In the case where receiving first enabling signal, by the signal output from the signal input part to the described first driving
Circuit；
Second logic circuit, the first input end of second logic circuit is connected to the output of the second voltage comparator
End, the second input are connected to the signal input part, output end and are connected to the second drive circuit, for receiving described the
In the case of two enabling signals, by the signal output from the signal input part to second drive circuit；
Wherein, first drive circuit be used for any IGBT pipes are driven, second drive circuit be used for pair
The low power consumption switch element is driven.
8. power control circuit according to any one of claim 1 to 7, it is characterised in that also include：
Time judgment module, is connected to the switching control module, for big in the duration for receiving first signal
In default very first time threshold value, or receive feelings of the duration more than default second time threshold of the secondary signal
Under condition, it is allowed to which the switching control module controls the work of the switch module according to first signal or the secondary signal
State, does not otherwise allow.
9. power control circuit according to claim 8, it is characterised in that the time judgment module includes：
Phase inverter, is connected to the switching control module, for first signal to being transmitted in the switching control module
Or the secondary signal carries out anti-phase processing；
Energy storage device, the anode of the energy storage device is connected to the input and the switching control module of the phase inverter, uses
In the case of low level first signal or the secondary signal is received in the switching control module, storage comes from
The electric energy of particular signal source, and receiving situation of the duration more than default very first time threshold value of first signal
Under, to the phase inverter input high level signal；
Power consuming devices, are connected to the energy storage device and the switching control module, for being received in the switching control module
In the case of first signal of high level or the secondary signal, the electric energy of the consumption energy storage device storage, and
In the case that the duration of the secondary signal is more than default second time threshold, believe to the phase inverter input low level
Number.
10. a kind of SPM, it is characterised in that including power consumption control as claimed in any one of claims 1-9 wherein electricity
Road.
11. a kind of frequency-conversion domestic electric appliances, it is characterised in that including SPM as claimed in claim 10.
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| CN201410038991.2A CN103956897B (en) | 2014-01-26 | 2014-01-26 | Power control circuit and SPM, frequency-conversion domestic electric appliances |
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| CN201410038991.2A CN103956897B (en) | 2014-01-26 | 2014-01-26 | Power control circuit and SPM, frequency-conversion domestic electric appliances |
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| CN203747652U (en) * | 2014-01-26 | 2014-07-30 | 广东美的制冷设备有限公司 | Power consumption control circuit, intelligent power module and frequency-variable household electrical appliance |
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| JP2002016486A (en) * | 2000-06-30 | 2002-01-18 | Matsushita Electric Ind Co Ltd | Semiconductor device |
| US9030054B2 (en) * | 2012-03-27 | 2015-05-12 | Raytheon Company | Adaptive gate drive control method and circuit for composite power switch |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5610507A (en) * | 1993-04-16 | 1997-03-11 | Gec Marconi Ltd. | Power control switch |
| CN1551067A (en) * | 2003-05-09 | 2004-12-01 | 富士通日立等离子显示器股份有限公司 | Plasma display device |
| CN1612479A (en) * | 2003-10-27 | 2005-05-04 | 三菱电机株式会社 | Driving circuit and semiconductor device |
| CN102223065A (en) * | 2010-03-31 | 2011-10-19 | 瑞萨电子株式会社 | Electronic device and semiconductor device |
| CN102684661A (en) * | 2011-03-15 | 2012-09-19 | 英飞凌科技股份有限公司 | Circuit arrangement with a mosfet and an igbt |
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|---|---|
| CN103956897A (en) | 2014-07-30 |
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