CN220569660U - IGBT packaging structure based on copper-clad ceramic substrate - Google Patents
IGBT packaging structure based on copper-clad ceramic substrate Download PDFInfo
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- CN220569660U CN220569660U CN202321521834.8U CN202321521834U CN220569660U CN 220569660 U CN220569660 U CN 220569660U CN 202321521834 U CN202321521834 U CN 202321521834U CN 220569660 U CN220569660 U CN 220569660U
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- 239000000919 ceramic Substances 0.000 title claims abstract description 49
- 239000000758 substrate Substances 0.000 title claims abstract description 47
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 20
- 229910000679 solder Inorganic materials 0.000 claims description 24
- 238000003466 welding Methods 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 8
- 238000010586 diagram Methods 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009421 internal insulation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Abstract
The utility model relates to an IGBT packaging structure based on a copper-clad ceramic substrate, which comprises the following components: the power terminal comprises a bottom plate, a copper-clad ceramic substrate welded on the bottom plate, four power terminals arranged on the copper-clad ceramic substrate, an IGBT chip and an FRD chip; the copper-clad ceramic substrate is divided into a gate region, a drain region and a source region which are insulated from each other; the two power terminals are arranged in the source region, one power terminal is arranged in the gate region, and the other power terminal is arranged in the drain region, wherein the area of the drain region is larger than that of the gate region and the source region; the IGBT chip and the FRD chip are arranged on the drain electrode region; the IGBT chip is connected with the grid region through bonding wires, and is connected with the source region through bonding wires, and the FRD chip is connected with the source region through bonding wires. Through redesigning the layout structure of the DBC, the DBC is suitable for packaging triodes such as IGBT, MOSFET and the like, and the suitability of IGBT chips with different sizes is improved.
Description
Technical Field
The utility model relates to the field of IGBT module packaging, in particular to the field of IGBT module packaging structure based on a copper-clad ceramic substrate.
Background
The SOT227 type power device packaging module is a composite power device and has the advantages of voltage type control, large input impedance, small driving power, simple control circuit, small switching loss, high on-off speed, high working frequency, large element capacity and the like. The product uses copper base plates (four corners are all provided with fixed hole sites), copper-clad ceramic base plates (Direct Bonding Copper are called DBC for short), insulated gate bipolar field effect transistor (IGBT) chips, follow current diode (FRD) chips, ultra-pure aluminum wires and the like, the special performance of the chips is added through the layout design of the DBC, aluminum wires are bonded and communicated together through reflow sintering, and a protective shell (fixed on the base plates) is assisted and filled with silica gel. SOT227 encapsulation volume is between single tube and module, and M4 screw flange bottom plate installation 4 draw forth the port, belongs to one kind of internal insulation encapsulation, and it has small, simple to operate, and a specific unit design has the characteristics of higher flexibility ratio, is used for encapsulating IGBT, all kinds of diodes, MOSFET etc. often.
Referring to fig. 1, fig. 2 and fig. 3, fig. 1 is a structural diagram of an existing SOT227 type power device package module, fig. 2 is a circuit topology diagram of an existing SOT227 type power device package module, according to a diode topology circuit and a front side of a chip being a positive electrode and a back side of the chip being a negative electrode, it is known that the chip needs to be placed on 1,4 copper sheets, an area of the 1.4 copper sheets is increased by an existing DBC structure for placing the chip, and the four copper sheets are independent and unconnected, and in combination with fig. 3, fig. 3 is a topology circuit diagram of an IGBT module, it is known that the 1,4 terminals of the IGBT module are connected to each other, but the 1,4 copper sheets of the existing DBC are not connected to each other, and need to be connected by aluminum wire welding, which is too troublesome.
Therefore, the internal structure of the copper-clad ceramic substrate of the existing SOT227 type power device packaging module is not suitable for the packaging structure of the IGBT module, which consists of an IGBT chip and an FRD chip, and the welding point of the power terminal is close to the chip, so that the chip and the power terminal are easily and directly communicated in the welding and fixing process.
Disclosure of Invention
Accordingly, an object of the present utility model is to provide an IGBT package structure based on a copper-clad ceramic substrate, which is suitable for packaging transistors such as IGBTs and MOSFETs by redesigning the layout structure of DBCs, and which has improved suitability for IGBT chips of different sizes.
The utility model is realized by the following technical scheme:
an IGBT packaging structure based on a copper-clad ceramic substrate, comprising: the power terminal comprises a bottom plate, a copper-clad ceramic substrate welded on the bottom plate, four power terminals arranged on the copper-clad ceramic substrate, an IGBT chip and an FRD chip;
the copper-clad ceramic substrate is divided into a gate region, a drain region and a source region which are insulated from each other; two power terminals are arranged in the source region, one power terminal is arranged in the gate region, one power terminal is arranged in the drain region, and the area of the drain region is larger than that of the gate region and the source region; the IGBT chip and the FRD chip are arranged on the drain electrode region; the IGBT chip is connected with the grid region through bonding wires, and is connected with the source region through bonding wires, and the FRD chip is connected with the source region through bonding wires.
Further, the copper-clad ceramic substrate is rectangular, and the IGBT chips and the FRD chips are arranged in a 7-shaped mode. By combining the area ratio of the IGBT chip and the FRD chip, the gate region power terminal and the FRD chip are arranged at the adjacent positions through 7-word arrangement, the available area of the IGBT chip is increased, pins of the IGBT chip and the FRD chip, which are required to be connected with the gate, are close to the gate power terminal, and loss is reduced.
Further, a resistance welding wire is arranged on the copper-clad ceramic substrate, four power terminal welding areas are respectively formed, and the power terminals are arranged on the power terminal welding areas.
Further, the mutually insulated gate region, drain region and source region are separated by a cross separation groove, and the power terminal bonding region on the same side of the source region and the gate region is formed by surrounding a bonding wire and a groove line of the cross separation groove. By this design, the arrangement of one solder resist 24 can be omitted, and solder paste overflow during soldering of the power terminals can be prevented by the slot lines of the cross-shaped separation slots.
Further, an isolation groove is formed in the copper-clad ceramic substrate between the IGBT chip and the FRD chip.
Further, the gate of the IGBT chip is close to the gate region.
Further, the solder resist line is a PSR solder resist green oil solder resist line.
The application provides a IGBT packaging structure based on cover copper ceramic substrate redesigns through the overall arrangement structure to DBC, make it be applicable to the encapsulation of triodes such as IGBT, MOSFET, the suitability to not unidimensional IGBT chip has been improved, and the welding line has been added to the welding mouth position of power terminal, the solder paste outwards diffuses to the chip when preventing welding power terminal, stray inductance of circuit has been reduced and the welding of power terminal is more firm, improve the shock resistance of power terminal, the isolation groove that sets up between IGBT chip and the FRD chip prevents that two chips from welding together, in order to prevent that the chip from touching and producing the collision and damaging the chip.
Drawings
Fig. 1 is a block diagram of an existing SOT227 type power device package module provided in the present application;
fig. 2 is a circuit topology diagram of a conventional SOT 227-type power device package module provided in the present application;
fig. 3 is a circuit topology diagram of an IGBT module provided in the present application;
FIG. 4 is a block diagram of an exemplary copper-clad ceramic substrate provided herein;
FIG. 5 is an assembly diagram of an exemplary IGBT package structure based on a copper-clad ceramic substrate provided herein;
fig. 6 is an assembly diagram of another exemplary IGBT package structure based on a copper-clad ceramic substrate provided herein.
Description of the drawings:
10: a bottom plate; 20: a copper-clad ceramic substrate; 21: a gate region; 22: a drain region; 23: a source region; 24: resistance welding wire; 25: an isolation groove; 26: a power terminal pad; 27: an IGBT chip; 28: an FRD chip; 30: and a power terminal.
For a better understanding and implementation, the present utility model is described in detail below with reference to the drawings.
Detailed Description
The following are specific embodiments of the present utility model and the technical solutions of the present utility model will be further described with reference to the accompanying drawings, but the present utility model is not limited to these embodiments.
In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model.
It will be understood that when an element is referred to as being "fixed to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
Referring to FIGS. 4-6, the present utility model provides a package structure of a copper-clad ceramic substrate 20 of an SOT227 type IGBT, which comprises a bottom plate 10, a copper-clad ceramic substrate 20 welded on the bottom plate, four power terminals 30 arranged on the copper-clad ceramic substrate, an IGBT chip 27 and an FRD chip 28;
the copper-clad ceramic substrate 20 is divided into a gate region 21, a drain region 22 and a source region 23 which are insulated from each other; two power terminals 30 are arranged in the source region 23, one power terminal is arranged in the gate region 21, one power terminal is arranged in the drain region 22, and the area of the drain region 22 is larger than the areas of the gate region 21 and the source region 23; the IGBT chip 27 and the FRD chip 28 are disposed on the drain region 22; the IGBT chip 27 is connected to the gate region 21 by bonding wires and to the source region 23 by bonding wires, and the FRD chip 28 is connected to the source region 23 by bonding wires.
The copper-clad ceramic substrate (Direct Bonding Copper) is simply referred to as DBC. The semiconductor device is formed by combining an oxygen-free copper plate and a ceramic plate, referring to fig. 5, in the application, the copper-clad ceramic substrate is rectangular, the IGBT chips and the FRD chips are arranged in a 7-shaped mode, and the grid electrodes of the IGBT chips are close to the grid region. The IGBT chip is fixed on the copper-clad ceramic substrate 20 by vacuum welding, the bottom of the IGBT chip is electrically connected to the copper-clad ceramic substrate 20, and since the IGBT chip has three electrodes, which are G-electrode-gate, D-electrode-drain, and S-electrode-source, the copper-clad ceramic substrate 20 is divided into a gate region 21, a drain region 22, and a source region 23, and considering that the bottom of the IGBT chip is a collector (i.e., drain) and the bottom of the FRD chip is a negative electrode, the FRD negative electrode is connected to the collector and D-electrode of the IGBT chip, the top of the IGBT chip is an emitter (i.e., source) and the top of the FRD are positive electrodes, and the FRD positive electrode is connected to the emitter and S-electrode of the IGBT chip, an ultra-pure aluminum wire is used to connect the two chip tops to the source region 23. Since the IGBT gate is on top of the chip, the gate is finally connected to the gate region 21 with an ultrapure aluminium wire, and the gate of the IGBT chip is close to the gate region, so that the aluminium wire bonding length is in this case shortest, avoiding long aluminium wire bonding. Thus, the circuit connection of the internal structure of the IGBT module is completed.
The IGBT chip and the FRD chip are distributed in a 7-shaped mode, the size of the IGBT chip is positively related to the power of the IGBT chip by combining the area occupied ratio of the IGBT chip and the FRD chip, the FRD chip usually needs smaller power, the power terminal of the gate region and the FRD chip are arranged in the adjacent position through the 7-shaped distribution, the available area of the IGBT chip is increased, the selectable range of the IGBT is larger, and the adaptability of the module is improved. And pins of the IGBT chip and the FRD chip, which are required to be connected with the grid, are close to the grid power terminal, so that loss is reduced.
In another embodiment, four power terminal bonding areas 26 are formed by surrounding the four power terminal bonding areas with solder resist 24, which is a PSR solder resist green oil solder resist. By introducing the solder resist 24, the solder paste can be prevented from diffusing outwards when the power terminal 30 is welded, so that the power terminal 30 is welded more firmly, and the shock resistance of the power terminal 30 is improved. At the same time, the solder paste of the power terminal 30 and the solder paste of the chip can be blocked to prevent short circuit caused by accidental communication.
The plurality of power terminals 30 are disposed in the power terminal lands 26 and soldered to the copper-clad ceramic substrate 20. After the wiring connection of the copper-clad ceramic substrate 20 is completed, the power terminal 30 is soldered, and the power terminal 30 is soldered to the land of the power terminal 30 by solder paste. A power terminal 30, the power terminal 30 providing an external interface for receiving and streaming circuit signals.
In another embodiment, the gate region 21, the drain region 22 and the source region 23, which are insulated from each other, are separated by a cross-shaped separation groove, and the power terminal bonding region 26 on the same side of the source region 21 as the gate region 22 is formed around by a bonding wire 24 and the groove line of the cross-shaped separation groove.
In this application, the power terminal area in the source region, which is nearer to the gate region, is surrounded by the group bonding wires and the slot lines of the cross separation grooves, so that the arrangement of one resistance bonding wire 24 can be omitted, and the solder paste during bonding the power terminal can be prevented from overflowing by the slot lines of the cross separation grooves.
In another preferred embodiment, an isolation groove 25 is further arranged between the IGBT chip and the FRD chip, and the isolation groove 25 is used for isolating the IGBT chip and the FRD chip. The topology circuit can know that the D pole (source) of the IGBT chip is connected with the negative pole of the FRD chip, the S pole (drain) of the IGBT chip is connected with the positive pole of the chip, the area with larger area on the front side of the IGBT chip is the S pole, the back is the D pole, the front side of the FRD chip is the positive pole, and the back is the negative pole, so that the S pole on the front side of the IGBT is connected with the positive pole on the front side of the FRD through an aluminum wire, and the D pole on the back side of the IGBT is connected with the negative pole on the back side of the FRD through a copper sheet of the copper-clad ceramic substrate 20. The solder paste is flowing during the vacuum soldering process, and the isolation groove 25 can prevent the flowing solder paste from soldering two chips together, so as to prevent the chips from being collided and damaged.
The application provides a IGBT packaging structure based on cover copper ceramic substrate redesigns through the overall arrangement structure to DBC, makes its encapsulation that is applicable to triodes such as IGBT, MOSFET, has improved the suitability to not unidimensional IGBT chip to the solder resist line 24 has been added in power terminal 30 soldered connection position, and solder paste outwards diffuses to the chip when preventing to weld power terminal 30, has reduced the stray inductance of circuit and has made power terminal 30 welding more firm, improves power terminal 30's shock resistance. The isolation groove 25 provided between the IGBT chip and the FRD chip prevents the flowing solder paste from soldering the two chips together to prevent the chips from colliding with the chips to cause collision damage.
The above examples merely represent a few embodiments of the utility model, which are described in more detail and are not to be construed as limiting the scope of the utility model. It should be noted that modifications and improvements can be made by those skilled in the art without departing from the spirit of the utility model, and the utility model is intended to encompass such modifications and improvements.
Claims (7)
1. IGBT packaging structure based on copper-clad ceramic substrate, characterized by comprising: the power terminal comprises a bottom plate, a copper-clad ceramic substrate welded on the bottom plate, four power terminals arranged on the copper-clad ceramic substrate, an IGBT chip and an FRD chip;
the copper-clad ceramic substrate is divided into a gate region, a drain region and a source region which are insulated from each other; two power terminals are arranged in the source region, one power terminal is arranged in the gate region, one power terminal is arranged in the drain region, and the area of the drain region is larger than that of the gate region and the source region; the IGBT chip and the FRD chip are arranged on the drain electrode region; the IGBT chip is connected with the grid region through bonding wires, and is connected with the source region through bonding wires, and the FRD chip is connected with the source region through bonding wires.
2. The IGBT packaging structure based on a copper-clad ceramic substrate according to claim 1, wherein:
the copper-clad ceramic substrate is rectangular, and the IGBT chips and the FRD chips are arranged in a 7-shaped mode.
3. The IGBT packaging structure based on a copper-clad ceramic substrate according to claim 2, characterized in that:
and the copper-clad ceramic substrate is provided with solder resist wires, four power terminal welding areas are respectively formed, and the power terminals are arranged on the power terminal welding areas.
4. The IGBT packaging structure based on a copper-clad ceramic substrate according to claim 3, wherein:
the mutually insulated gate region, drain region and source region are separated by a cross separation groove, and the power terminal welding area on the same side of the source region and the gate region is formed by surrounding a bonding wire and a groove line of the cross separation groove.
5. The IGBT packaging structure based on a copper clad ceramic substrate according to any one of claims 1 to 4, wherein:
and an isolation groove is arranged on the copper-clad ceramic substrate between the IGBT chip and the FRD chip.
6. The IGBT packaging structure based on copper clad ceramic substrates of claim 5 wherein: and the grid electrode of the IGBT chip is close to the grid electrode region.
7. The IGBT packaging structure based on the copper clad ceramic substrate according to claim 4, wherein:
the solder resist line is PSR solder resist green oil solder resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321521834.8U CN220569660U (en) | 2023-06-14 | 2023-06-14 | IGBT packaging structure based on copper-clad ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321521834.8U CN220569660U (en) | 2023-06-14 | 2023-06-14 | IGBT packaging structure based on copper-clad ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220569660U true CN220569660U (en) | 2024-03-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321521834.8U Active CN220569660U (en) | 2023-06-14 | 2023-06-14 | IGBT packaging structure based on copper-clad ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220569660U (en) |
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2023
- 2023-06-14 CN CN202321521834.8U patent/CN220569660U/en active Active
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