CN110401365A - GaN non-bridge PFC power module for high-power charger - Google Patents
GaN non-bridge PFC power module for high-power charger Download PDFInfo
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- CN110401365A CN110401365A CN201910739167.2A CN201910739167A CN110401365A CN 110401365 A CN110401365 A CN 110401365A CN 201910739167 A CN201910739167 A CN 201910739167A CN 110401365 A CN110401365 A CN 110401365A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
- H02M1/4208—Arrangements for improving power factor of AC input
- H02M1/4233—Arrangements for improving power factor of AC input using a bridge converter comprising active switches
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Power Engineering (AREA)
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Abstract
The present invention relates to a kind of GaN non-bridge PFC power modules, comprising: EMI filter circuit, commutation capacitor C2, inductance L1, inductance L2, the first GaN half-bridge circuit, the 2nd GaN half-bridge circuit, metal-oxide-semiconductor MP, metal-oxide-semiconductor Mn, third gate drive circuit, output capacitance C1, output detection circuit, output feed circuit, input detecting circuit, input feedback circuit and pfc controller.Circuit uses two-sided layout structure in practical laying out pattern, comprising: positioned at positive input higher-pressure region, the input area high voltage bus Vac, output voltage area and positioned at the low-voltage power supply area of reverse side.The present invention is by using interleaving technique, realizing bigger power output on the basis of existing no bridge boost APFC technology；Switch change-over is carried out using novel GaN high-speed switching devices, realizes higher power density；Optimization is laid out to GaN device, crisscross parallel signal and high voltage bus using two-sided layout structure, reliability is improved, can be widely applied in all kinds of high-power charger systems.
Description
Technical field
The present invention relates to a kind of GaN non-bridge PFC power supplys for high-power charger for high-power charger system
Module belongs to field of power electronics.
Background technique
In the 21st century, is under the traction of the new industries such as smart grid, mobile communication and new-energy automobile, electric power electricity
Sub- application system requires to further increase the efficiency of system, miniaturization and increases function, and special requirement circuit is applied in size, matter
Tradeoff between amount, power and efficiency, such as micro- inverter of server power supply management, battery charger and solar energy electric field.
Above-mentioned application requirement power electronic system also has high power density (> 500W/in while design efficiency > 95%3, i.e.,
30.5W/cm3), high-specific-power (10kW/ pounds, 22kW/kg) and high total load point (> 1000W).With super node MOSFET and insulation
The appearance and application popularization of grid bipolar transistor (IGBT), device performance move closer to the limit of silicon materials, and every 4 years power is close
The rule that degree promotes 1 times tends to be saturated (Moore's Law of field of power electronics), and power density is only the silicon-based power of units
The exploitation of semiconductor devices is for these reasons and difficult.
It is in recent years the third generation semiconductor power device of representative with gallium nitride (GaN), because forbidden band is wide, breakdown field strength
High, high electron saturation velocities are fast, lead in high-power, high temperature, high frequency, anti-radiation microelectronic field and short-wavelength light electronics
There is the performance for being substantially better than the first generation such as Si, Ge, GaAs and second generation semiconductor material in domain.GaN power device and Si device phase
Than with superior on-state characteristic and extraordinary switching characteristic, therefore the pass of industry is just attracted in a relatively short period of time
Note, the scholars for being engaged in application study have also carried out a large amount of research work, have applied it to the low pressure such as POL, DC/DC, small function
In the power supply device of rate.Studies have shown that switching frequency can be increased substantially with GaN device replacement Si device, maintain
Good efficiency index.Unquestionably, in low pressure, low-power applications, GaN device will obtain more and more common application,
And greatly facilitate these field power supply devices power density, in terms of performance raising.
Increasingly serious choose is faced in the design of current new-energy automobile and power battery of electric vehicle charger system
War, needs higher charge efficiency and bigger charge power.As Full Vehicle System is to power module miniaturization and power density
It is required that it is increasingly strict, how in the case where space invariance, higher and higher output power is provided, and there is ultra-high speed transient to ring
It should be a comprehensive bottleneck problem of charging electromechanical source design with optimal cost performance.High-performance Vehicular charger needs technology
It is required that mainly having: high power density, high efficiency, High Power Factor and low harmony wave, electrical isolation, over-voltage, overcurrent, short-circuit protection
Deng.In order to meet requirements above, from circuit topology, representative on-board charger mainly uses two-stage topology, the non-isolated AC- of prime
DC converter is for PFC and exports stable DC bus-bar voltage, and rear class isolation type DC-DC converter realizes electricity
The electrical isolation of net input side and battery outlet side simultaneously exports the voltage of charging instruction requirement, electric current.Charging instruction is usually by electricity
The battery management system of pond group provides, and is sent to charger with specific communication mode.
There are mainly two types of currently used power factor correction technologies, active correction and passive correction.Passive calibration network
It is to be formed with passive devices such as capacitor, inductance, two pole of power battalion, reduces higher hamonic wave by improving the method for the rectification angle of flow
Increase power factor.Passive way control simple, at low cost, high reliablity, but it is bulky and seldom arrive very high power because
Number.Very high power factor can be obtained in active power factor correction, small in size, is widely used in Switching Power Supply.Power factor school
The most important research hotspot of positive technology is novel circuit topological research, and in comparison boost topology has the advantages that more: inductance leans on
Nearly input terminal, input current pulsation is small, EMI is small, and input current is easily controllable, reliability height etc. under load short circuits, therefore industry
It is most widely used.Typical boost APFC structure needs increase diode rectifier bridge before converter, and switching tube works in
Hard switching state has 2 in middle high-power applications occasion: (1) the low pressure operating condition under wide input voltage requires, input electricity
Stream is big, and rectifier bridge loss is big；(2) under the conditions of high-frequency work, switching loss is big, and EMI is serious.Improvement skill regarding to the issue above
Art includes: non-bridge PFC technology, interleaving technique and soft switch technique.
It is basic without bridge boost APFC converter, be called and make double boost APFC converters, as shown in Figure 1.Work as input
When voltage is positive half cycle, L1-M1-D1 and M2 participate in work and constitute boost circuit all the way, when input voltage is negative half period,
L1-M2-D2 and M1 participates in work, constitutes another way boost circuit.Compared to traditional boost APFC circuit, no bridge circuit
Two diodes are eliminated, input current only flows through 1 diode and two metal-oxide-semiconductors, reduces conduction loss.But Fig. 1 gives
Circuit out is difficult to realize high-power output, also requires further improvement optimization thus.To realize bigger power output, use
Interleaving technique is more feasible measure, but the power mismatch between crisscross parallel phase must be limited；For reality
Existing higher power density, carrying out switch change-over using novel high speed switching device is main path.
The characteristic of GaN device, so that gate driving charge (Qg) very little of GaN device, junction capacity is also very small, switch speed
It spends more faster than Si device.And switching frequency raising has the advantage that raising power density, therefore new using GaN device exploitation
Type PFC power module is a kind of good technological approaches.However power density is improved by the way of improving switching frequency, it needs
Bottleneck problem of both facing: first is that the curent change of switching branches is very fast in GaN device switching process, di/dt
It is very high, due to inevitably there is parasitic inductance in loop of power circuit, when electric current changes rapidly, can be produced at switching device both ends
Raw very high peak overvoltage.It is light then cause circuit erroneous action, EMI exceeded, it is heavy then device breakdown is caused to be damaged.GaN device is very
High switching speed causes unwanted oscillation in its switching process and overvoltage phenomenon obvious more than Si device.GaN device due to
Switching speed is faster, therefore more sensitive to the parasitic inductance in circuit.If wiring not enough optimization, parasitic inductance is larger, then
It will have a direct impact on the normal work of circuit.Second is that the power density with GaN power module improves, the cooling requirements of power device
It is more stringent.Reason is that module volume reduces, the selections of heat spreader structures and position put on the performance of module influence compared with
Conventional power module is more sensitive.
In conclusion there are efficiency for existing no bridge boost APFC technology not for new-energy automobile charging application demand
High, power grade and the inadequate defect of power density.The present invention is on the basis of existing no bridge boost APFC technology, using friendship
Wrong parallel technology realizes bigger power output；Switch change-over is carried out using novel GaN high-speed switching devices, is realized higher
Power density；Optimization is laid out to GaN device, crisscross parallel signal and high voltage bus using two-sided layout structure, raising can
By property.
Summary of the invention
For the application challenge for face when power is integrated using GaN power device, the present invention is in gate drive circuit, device
Part layout and heat dissipation etc. design is optimized, propose it is a kind of use GaN power device applications in high-power charger
GaN non-bridge PFC power module.
According to technical solution provided by the invention, the GaN non-bridge PFC power module packet for high-power charger
It includes: EMI filter circuit, commutation capacitor C2, inductance L1, inductance L2, the first GaN half-bridge circuit, the 2nd GaN half-bridge circuit, metal-oxide-semiconductor
MP, metal-oxide-semiconductor Mn, third gate drive circuit, output capacitance C1, output detection circuit, output feed circuit, input detecting circuit,
Input feedback circuit and pfc controller；
Input high voltage AC bus AC is connected to the input terminal of EMI filter circuit；The high-voltage output end of EMI filter circuit
Vac is connected to a left side for the upper end of commutation capacitor C2, the first input end of input detecting circuit, the left end of inductance L1 and inductance L2
End；The low-voltage output Vacgnd of EMI filter circuit is connected to the source of the second input terminal of input detecting circuit, metal-oxide-semiconductor MP
With the source of metal-oxide-semiconductor Mn；The right end VH of inductance L1 is connected to the high side input terminal and the 2nd GaN half-bridge of the first GaN half-bridge circuit
The downside input terminal of circuit；The right end VL of inductance L2 is connected to the downside input terminal and the 2nd GaN half-bridge of the first GaN half-bridge circuit
The high side input terminal of circuit；First pulse width signal PWH1 of pfc controller and the second pulse width signal PWL1 output end are separately connected
To the high side and downside input terminal of the first GaN half-bridge circuit, the third pulse width signal PWH2 and the 4th pulse width signal of pfc controller
PWL2 output end is connected respectively to the high side and downside input terminal of the 2nd GaN half-bridge circuit, the 5th pulse width signal of pfc controller
PWH3 and the 6th pulse width signal PWL3 output end are connected respectively to the high side and downside input terminal of third gate drive circuit；First
The half-bridge output end of GaN half-bridge circuit be connected to output high voltage bus end Vout+, metal-oxide-semiconductor MP drain terminal, output detection circuit the
The upper end of two input ports and output capacitance C1；The half-bridge output end of 2nd GaN half-bridge circuit is connected to output low-voltage bus bar end
Vout-, the drain terminal of metal-oxide-semiconductor Mn, the first input port of output detection circuit and output capacitance C1 lower end；Output detection circuit
Voltage sense signal output end, output electric current measure signal output end and temperature detection signal output end be connected respectively to
Export the input terminal of feed circuit；Through exporting output voltage feedback signal, the output current feedback letter that feed circuit is handled
Number and temperature feedback signal be connected respectively to the input terminal of pfc controller；The input voltage measurement signal of input detecting circuit is defeated
Outlet, input electric cur- rent measure signal output end are connected respectively to the input terminal of input feedback circuit, through input feedback processing of circuit
Obtained input voltage feedback signal and input current feedback signal are connected respectively to the input terminal of pfc controller.
Specifically, the first GaN half-bridge circuit and the 2nd GaN half-bridge circuit use identical GaN half-bridge circuit, it should
GaN half-bridge circuit includes: that the first gate drive circuit, the second gate drive circuit, the first GaN power switch, the 2nd GaN power are opened
Pass, the first current-limiting resistance and the second current-limiting resistance；The high side input terminal of GaN half-bridge circuit is connected to the defeated of the first gate drive circuit
Enter end；The downside input terminal of GaN half-bridge circuit is connected to the input terminal of the second gate drive circuit；The output of first gate drive circuit
End is connected to the left end of the first current-limiting resistance, and the right end of the first current-limiting resistance is connected to the grid end of the first GaN power switch, and second
The output end of gate drive circuit is connected to the left end of the second current-limiting resistance, and the right end of the second current-limiting resistance is connected to the 2nd GaN function
The grid end of rate switch；It is female to be connected to input high pressure for the source of first GaN power switch, the i.e. high voltage input terminal of GaN half-bridge circuit
Line Vbus；The drain terminal of first GaN power switch is that half-bridge exports HB, and half-bridge output HB is connected to the leakage of the 2nd GaN power switch
End；The source of 2nd GaN power switch, the i.e. low pressure, input end of GaN half-bridge circuit are connected to input low-voltage bus bar Vgnd.
Specifically, the first GaN power switch and the 2nd GaN power switch are all made of multiple low current GaN power
Switch in parallel realizes High-current output, and is all made of the HEMT device of LGA package form.
Specifically, circuit uses two-sided layout structure in practical laying out pattern, comprising: input higher-pressure region, input high pressure
The area bus Vac, output voltage area and low-voltage power supply area；The input higher-pressure region, the input area high voltage bus Vac, output voltage area
It is distributed in front, the low-voltage power supply area is distributed in reverse side, all PWM pulse width signals between obverse and reverse, and input
Voltage detection signal, input electric cur- rent measure signal, voltage sense signal, output electric current measure signal and temperature detection signal
Pass through through-hole connection signal；
It include: EMI filter circuit domain area, commutation capacitor C2 domain area, input detection electricity inside the input higher-pressure region
Road domain area, input high voltage AC bus AC domain area and input high-voltage ground wire domain area；
It include: the first GaN half-bridge circuit domain area, the first radiator domain area, the 2nd GaN inside the output voltage area
Half-bridge circuit domain area, the second radiator domain area, inductance L1 domain area, inductance L2 domain area, third gate drive circuit domain
Area, metal-oxide-semiconductor Mp domain area, metal-oxide-semiconductor Mn domain area, third radiator domain area, output capacitance C1 domain area, output high voltage bus
Vout+ domain area, output low-voltage bus bar Vout- domain area, VH domain area, VL domain area and output detection circuit domain area；Institute
The first radiator domain area is stated inside the first GaN half-bridge circuit domain area, second heat dissipation domain area is in the 2nd GaN half-bridge
Inside circuit layout area；
The area the input high voltage bus Vac is connected across between input higher-pressure region and output voltage area, inputs high voltage bus Vac
On the left of the area and right side in EMI filter circuit domain area is overlapped；Input the area high voltage bus Vac right side while and output voltage Qu Zhong electricity
Feel on the left of L1 domain area and is overlapped on the left of inductance L2 domain area；
Include pfc controller domain area, input feedback circuit layout area, output feed circuit inside the low-voltage power supply area
Domain area and low-voltage ground wire domain area.
Specifically, the half-bridge circuit domain area the first GaN is with the 2nd half-bridge circuit domain area GaN using mutually isostructural
GaN half-bridge domain area, the GaN half-bridge domain area include: the first gate drive circuit H domain area, the second gate drive circuit L domain
Area, the first current-limiting resistance domain area, the second current-limiting resistance domain area, first through hole domain area, the second through-hole domain area, third are logical
Hole domain area, the first HEMT device domain area, the second HEMT device domain area, third HEMT device domain area, the 4th HEMT device
Part domain area, the first radiator domain area, half-bridge output HB domain area, input high voltage bus Vbus domain area and input high pressure
Line Vgnd domain area；Wherein the first HEMT device and the second HEMT device parallel connection constitute the first GaN power switch, the 3rd HEMT device
Part and the 4th HEMT device parallel connection constitute the 2nd GaN power switch；The first radiator domain area is distributed in half-bridge output HB
The inside in domain area.
Specifically, input high voltage bus Vbus domain area uses c-type semi-surrounding structure, divide in the space surrounded
It is furnished with: first through hole domain area, the first gate drive circuit H domain area, the first current-limiting resistance domain area, the first HEMT device domain
Area and the second HEMT device domain area；On the left of the first HEMT device domain area and the second sub- HEMT device domain area left side court
To the right end of the first current-limiting resistance；
Two ends of the input high voltage bus Vbus domain area c-type semi-surrounding structure are all made of right angled triangle knot
The bevel edge of structure, 2 right angled triangles is opposite, is separately connected the source in the first HEMT device domain area and the second HEMT device domain area
Pole；The half-bridge output HB domain is clipped between the first HEMT device domain area and the drain electrode in the second HEMT device domain area
The upper left corner in area, the shape in the upper left corner be an apex angle towards a left side and be acute angle isosceles triangle；
Input high-voltage ground wire Vgnd domain area uses same c-type semi-surrounding structure, divides in the space surrounded
It is furnished with the second through-hole domain area, the second gate drive circuit L domain area, the second current-limiting resistance domain area, third HEMT device domain
Area and the 4th HEMT device domain area；On the left of the third HEMT device domain area and domain area of the 4th HEMT device left side court
To the right end of the second current-limiting resistance；
Two ends of the input high-voltage ground wire Vgnd domain area c-type semi-surrounding structure are all made of right angled triangle knot
The bevel edge of structure, 2 right angled triangles is opposite, is separately connected the source in third HEMT device domain area and the 4th HEMT device domain area
Pole；The half-bridge output HB domain is clipped between the third HEMT device domain area and the drain electrode in the 4th HEMT device domain area
The lower left corner in area, the shape in the lower left corner be an apex angle towards a left side and be acute angle isosceles triangle.
Specifically, metal wire and first current-limiting resistance of the right end of first current-limiting resistance to the first HEMT device grid end
Right end to the second HEMT device grid end wire lengths it is strictly equal, and the length of two wires is respectively less than 5mm, together
When between angle less than 120 degree；Metal wire and second of the right end of second current-limiting resistance to third HEMT device grid end
The wire lengths of the right end of current-limiting resistance to the 4th HEMT device grid end are strictly equal, and the length of two wires is small
In 5mm, at the same between angle less than 120 degree.
Specifically, being responsible for two wires of transmission the first pulse width signal PWH1 and the second pulse width signal PWL1, being responsible for biography
Two wires of defeated third pulse width signal PWH2 and the 4th pulse width signal PWL2, and it is responsible for the 5th pulse width signal PWH3 of transmission
There is following requirement with two wires of the 6th pulse width signal PWL3:
One, two wires length, width and thickness all must be stringent equal；
Two, two wires must use parallel cabling mode, and mutual vertical range is not more than 2mm；
Three, the region that two wires layout is passed by must carry out insulation blocking by low-voltage ground wire.
The invention has the advantages that the GaN non-bridge PFC power module provided by the present invention for high-power charger, In
On the basis of existing no bridge boost APFC technology, using interleaving technique, bigger power output is realized；Using novel
GaN high-speed switching devices carry out switch change-over, realize higher power density；Using two-sided layout structure to GaN device, staggeredly
Parallel signal and high voltage bus are laid out optimization, improve reliability, can be widely applied to all kinds of high-power charger systems
In.
Detailed description of the invention
The existing basic non-bridge PFC circuits structure chart of Fig. 1.
Fig. 2 is circuit structure diagram of the invention.
Fig. 3 is GaN half-bridge circuit structure chart of the present invention.
Fig. 4 is the two-sided layout of power module of the present invention.
Fig. 5 is the detailed placement figure in GaN half-bridge domain area of the present invention.
Fig. 6 is a kind of practical layout figure in the GaN half-bridge domain area realized using the present invention.
Fig. 7 is controller and output feedback fraction practical layout figure in the low-voltage power supply area realized using the present invention.
Fig. 8 is the test waveform using the embodiment of the present invention.
Specific embodiment
The present invention is described in more detail with example with reference to the accompanying drawing.
Fig. 2 is the GaN non-bridge PFC power module circuitry structure chart that the present invention is used for high-power charger, including EMI filtering
Circuit U 6, commutation capacitor C2, inductance L1, inductance L2, the first GaN half-bridge circuit U7, the 2nd GaN half-bridge circuit U8, metal-oxide-semiconductor MP,
Metal-oxide-semiconductor Mn, third third gate drive circuit, output capacitance C1, output detection circuit U3, output feed circuit U2, input detection
Circuit U 5, input feedback circuit U 4 and pfc controller U1.
Circuit connecting relation is as follows: input high voltage AC bus AC is connected to the input terminal of EMI filter circuit U6；EMI filter
The high-voltage output end Vac of wave circuit U6 is connected to the upper end of commutation capacitor C2, the first input end of input detecting circuit U5, inductance
The left end of L1 and the left end of inductance L2；The low-voltage output Vacgnd of EMI filter circuit U6 is connected to input detecting circuit U5's
Second input terminal connects, the source of the source of metal-oxide-semiconductor MP and metal-oxide-semiconductor Mn；The right end VH of inductance L1 is connected to the first GaN half-bridge circuit
The downside input terminal of the high side input terminal of U7 and the 2nd GaN half-bridge circuit U8；The right end VL of inductance L2 is connected to the first GaN half-bridge
The high side input terminal of the downside input terminal of circuit U 7 and the 2nd GaN half-bridge circuit U8；The first pulse width signal of pfc controller U1
PWH1 and the second pulse width signal PWL1 output end are connected respectively to the high side H and downside L input terminal of the first GaN half-bridge circuit U7,
The third pulse width signal PWH2 of pfc controller U1 and the 4th pulse width signal PWL2 output end are connected respectively to the 2nd GaN half-bridge electricity
The high side and downside input terminal of road U8, the 6th pulse width signal PWL3 output end of the 5th pulse width signal PWH3 point of pfc controller U1
It is not connected to the high side and downside input terminal of third gate drive circuit；The half-bridge output end of first GaN half-bridge circuit U7 is connected to
Export high voltage bus end Vout+, the drain terminal of metal-oxide-semiconductor MP, the second input port of output detection circuit U3 and output capacitance C1
Upper end；The half-bridge output end of 2nd GaN half-bridge circuit U8 is connected to the drain terminal, defeated of output low-voltage bus bar end Vout-, metal-oxide-semiconductor Mn
The lower end of the first input port of detection circuit U3 and output capacitance C1 out.The voltage sense signal of output detection circuit U3
F1 output end, output electric current measure signal f2 output end and temperature detection signal f3 output end are connected respectively to output feed circuit
The first, second, and third input terminal of U2；Through exporting output voltage feedback signal fb1, the output that feed circuit U2 is handled
Current feedback signal fb2 and temperature feedback signal fb3 is connected respectively to the first, second, and third input terminal of pfc controller U1；
Input voltage measurement signal ff1 output end, the input electric cur- rent measure signal ff2 output end of input detecting circuit U5 is connected respectively to
First, second input terminal of input feedback circuit U 4 handles obtained input voltage feedback signal through input feedback circuit U 4
Ffb1 and input current feedback signal ffb2 is connected respectively to the four, the 5th input terminals of pfc controller U1.
Foregoing circuit uses two-sided layout structure in practical laying out pattern.
The base of non-bridge PFC power module circuitry structure proposed by the present invention existing no bridge boost APFC technology in Fig. 1
Improvement on plinth mainly has at 2 points: (1) using interleaving technique, realize bigger power output.Inductance L1, the first GaN in figure
Half-bridge circuit U7 and metal-oxide-semiconductor Mp constitutes a boost APFC branch；Inductance L2, the 2nd GaN half-bridge circuit U8 and metal-oxide-semiconductor Mn
Constitute another boost APFC branch.To increase output power, traditional power switch without bridge boost APFC is by GaN
Half-bridge circuit replaces.(2) switch change-over is carried out using novel GaN high-speed switching devices, realizes higher power density.By adopting
500KHz can be can easily exceed with the switching frequency of the GaN device of LGA package, PFC module, substantially reduce volume, improve function
Rate density.In addition, the present invention is also laid out GaN device, crisscross parallel signal and high voltage bus using two-sided layout structure
Optimization improves reliability.Circuit operating pattern is similar with the operating mode of non-bridge PFC basic in Fig. 1 in Fig. 2, no longer heavy herein
Multiple description.
First GaN half-bridge circuit U7 and the 2nd GaN half-bridge circuit U8 of the present invention are identical GaN half-bridge electricity
Road, circuit structure diagram are as shown in Figure 3.The GaN half-bridge circuit include: the first gate drive circuit H, the second gate drive circuit L,
GaN power switch MH, GaN power switch ML, current-limiting resistance RH and current-limiting resistance RL.The high side input terminal of GaN half-bridge circuit, i.e.,
Pulse width signal PWH (PWH1, PWH2 of corresponding diagram 2) is connected to the input terminal of the first gate drive circuit (H)；GaN half-bridge circuit
Downside input terminal, i.e. pulse width signal PWL (PWL1, PWL2 of corresponding diagram 2) are connected to the input terminal of the second gate drive circuit L；The
The output end of one gate drive circuit H is connected to the left end of current-limiting resistance RH, and the right end of current-limiting resistance RH is connected to GaN power switch
The output end of the grid end of MH, the second gate drive circuit L is connected to the left end of current-limiting resistance RL, and the right end of current-limiting resistance RL is connected to
The grid end of GaN power switch ML；The source of GaN power switch MH, the i.e. high voltage input terminal of GaN half-bridge circuit, are connected to input
High voltage bus Vbus；The drain terminal of GaN power switch MH is that half-bridge exports HB, and half-bridge output HB is connected to GaN power switch ML's
Drain terminal；The source of GaN power switch ML, the i.e. low pressure, input end of GaN half-bridge circuit are connected to input low-voltage bus bar Vgnd.
In the circuit structure of Fig. 2, in 3 groups of pulse width signals of pfc controller U1 output, PWH1 and PWL1 are first group complementary
Pulse signal, PWH2 and PWL2 are second group of complementary pulse signal, and PWH3 and PWL3 are third group complementary pulse signal.Wherein,
First and second groups of complementary pulse signals are all the high-frequency signals that frequency is more than 500KHz, for driving high speed GaN switching device；
Third group complementary pulse signal is the low speed pulse signal that frequency is equal to power frequency component, for driving metal-oxide-semiconductor MP and metal-oxide-semiconductor Mn.
In practical applications, the first gate drive circuit H and the second gate drive circuit L can by GaN half-bridge circuit shown in Fig. 3
To use a half-bridge drive circuit to realize, therefore gate drive circuit can be merged into one.Existing GaN device is defeated simultaneously
Electric current is also unable to reach the size of current of silicon-based devices out, and to realize High-current output ability, GaN power switch of the invention is adopted
High-current output is realized with multiple low current switch pipe parallel connections.To realize optimal switching frequency, GaN function of the present invention
Rate switch MH and GaN power switch ML is all made of the HEMT device of LGA package form, reduces the shadow of parasitic parameter to the full extent
It rings.
The pfc controller U1 can realize using analog linear circuit or DSP, the chip area of pfc controller
There can be certain difference according to different controller types with layout type.First pulse width signal PWH1 of pfc controller output
It can be identical signal, the second pulse width signal PWL1 and the 4th pulsewidth letter of pfc controller output with third pulse width signal PWH2
Number PWL2 equally may be identical signal.
Correlation function can be completed using existing enhanced GaN HEMT driving chip in gate drive circuit of the present invention；
Input detecting circuit U5 and output detection circuit U3 uses the common temperature sensing circuit of existing Switching Power Supply, current detection circuit
It can be realized with voltage detecting circuit；The input feedback circuit U 4 and output feed circuit U2 are using optocoupler progress signal
Transmission, then handle and can be realized through voltage integral circuit.
Fig. 4 is the two-sided layout structure chart that uses of the present invention, including input higher-pressure region 31, the input area high voltage bus Vac 32,
Output voltage area 33 and low-voltage power supply area 34.The input higher-pressure region 31, the input area high voltage bus Vac 32, output voltage area 33
It is distributed in the front of power module, the low-voltage power supply area 34 is distributed in reverse side, the first pulse width signal between obverse and reverse
PWH1, the second pulse width signal PWL1, third pulse width signal PWH2, the 4th pulse width signal PWL2, the 5th pulse width signal PWH3, the 6th
Pulse width signal PWL3, input voltage measurement signal ff1, input electric cur- rent measure signal ff2, voltage sense signal f1, output
Current detection signal f2 and output temperature detection signal f3 pass through through-hole connection signal.
It include EMI filter circuit U6 domain area, commutation capacitor C2 domain area, input detection inside the input higher-pressure region 31
5 domain area of circuit U, input high voltage AC bus AC domain area and input high-voltage ground wire domain area.
It include the first GaN half-bridge U7 domain area, the first radiator domain area, the 2nd GaN inside the output voltage area 33
Half-bridge U8 domain area, the second radiator domain area, inductance L1 domain area, inductance L2 domain area, third gate drive circuit domain area,
Metal-oxide-semiconductor MP domain area, metal-oxide-semiconductor Mn domain area, third radiator domain area, output capacitance C1 domain area, output high voltage bus
Vout+ domain area, output low-voltage bus bar Vout- domain area, VH domain area, VL domain area and detection circuit domain area；Described
One radiator domain area is inside the first GaN half-bridge U7 domain area, and the second radiator domain area is at the 2nd GaN half-bridge U8 editions
Inside figure area.
The area the input high voltage bus Vac 32 is connected across between input higher-pressure region 31 and output voltage area 33, inputs high pressure
The right side in 32 left side of the area bus Vac and EMI filter circuit U6 domain area is overlapped；Input the right side of the area high voltage bus Vac 32 simultaneously and
It is overlapped on the left of inductance L1 domain area and inductance L2 domain area in output voltage area 33.
It is anti-comprising pfc controller U1 domain area, 4 domain area of input feedback circuit U, output inside the low-voltage power supply area 34
Current feed circuit U2 domain area and low-voltage ground wire domain area.
The first GaN half-bridge U7 domain area and the 2nd GaN half-bridge U8 domain area use identical GaN half-bridge domain area.
Fig. 5 is the detailed placement figure in the GaN half-bridge domain area.GaN power switch MH and GaN power switch ML is all made of 2 low currents
HEMT device parallel connection realizes that i.e. GaN power switch MH is formed in parallel by the first HEMT device MH1 and the second HEMT device MH2,
GaN power switch ML is formed in parallel by third HEMT device ML1 and the 4th HEMT device ML2.Inside the GaN half-bridge domain area
Including the first gate drive circuit H domain area, the second gate drive circuit L domain area, the first current-limiting resistance RH domain area, the second current limliting
Resistance RL domain area, first through hole P_PWH domain area, the second through-hole P_PWL domain area, third through-hole P_T3 domain area, first
HEMT device MH1 domain area, the second HEMT device MH2 domain area, third HEMT device ML1 domain area, the 4th HEMT device ML2
Domain area, the first radiator domain area, half-bridge output HB domain area, input high voltage bus Vbus domain area and input high-voltage ground wire
Vgnd domain area, the first radiator domain area are distributed in the inside in half-bridge output HB domain area.
Input high voltage bus Vbus domain area uses c-type semi-surrounding structure, is distributed with first in the space surrounded
Through-hole P_PWH domain area, the first gate drive circuit H domain area, current-limiting resistance RH domain area, the first HEMT device MH1 domain area
With the second HEMT device MH2 domain area.The first HEMT device MH1 domain area and the domain area of the second HEMT device MH2
Left side, i.e. grid end are positioned against the right end PH of current-limiting resistance RH, the HEMT device MH1 grid end of right end PH to first of current-limiting resistance RH
Metal wire and the wire lengths of the HEMT device MH2 grid end of right end PH to second of current-limiting resistance RH must be stringent equal, and
And two the length of wires be necessarily less than 5mm, while between angle be necessarily less than 120 degree.The input high voltage bus
Vbus domain area is all made of triangular structure of right angle, the bevel edge of 2 right angled triangles using two ends of c-type semi-surrounding structure
Relatively, it is separately connected the source electrode in the first HEMT device MH1 domain area and the second HEMT device MH2 domain area.The input high pressure
All metal layer coverings inside bus Vbus domain area, and include 2 through-hole domain areas P_H1 and P_H2.First HEMT device
The upper left corner in HB domain area, shape are exported between part MH1 domain area and the drain electrode in the second HEMT device MH2 domain area for half-bridge
For an apex angle towards a left side and be acute angle isosceles triangle, and isosceles triangle inside there are a through-hole domain area P_T1.
Input high-voltage ground wire Vgnd domain area uses same c-type semi-surrounding structure, and the spatial distribution surrounded has
Second through-hole P_PWL domain area, the second gate drive circuit L domain area, the second current-limiting resistance RL domain area, third HEMT device
ML1 domain area and the 4th HEMT device ML2 domain area.The third HEMT device ML1 domain area and the 4th HEMT device ML2's
The left side in domain area, i.e. grid end are positioned against the right end PL to of the right end PL, the second current-limiting resistance RL of the second current-limiting resistance RL
The gold of the sub- HEMT device ML2 grid end of right end PL to the 4th of the metal wire and the second current-limiting resistance RL of three HEMT device ML1 grid ends
Belonging to line length must be stringent equal, and the length of two wires is necessarily less than 5mm, at the same between angle be necessarily less than
120 degree.The input high-voltage ground wire Vgnd domain area is all made of right angled triangle knot using two ends of c-type semi-surrounding structure
The bevel edge of structure, 2 right angled triangles is opposite, is separately connected third HEMT device ML1 domain area and the 4th HEMT device ML2 domain
The source electrode in area.All metal layer coverings inside the input high-voltage ground wire Vgnd domain area, and include 2 through-hole domain areas
P_L1 and P_L2.HB is exported between third HEMT device ML1 domain area and the drain electrode in the 4th HEMT device ML2 domain area for half-bridge
The lower left corner in domain area, shape be an apex angle towards a left side and be acute angle isosceles triangle, and deposited inside isosceles triangle
In a through-hole domain area P_T2.
It include 2 gate drive circuit versions in the detailed placement figure of input higher-pressure region 31 shown in Fig. 5 in the embodiment of the present invention
Figure area, 2 current-limiting resistance domain areas, 4 GaN power switch domain areas, 1 the first radiator domain area, 1 half-bridge export HB
Domain area, input high voltage bus Vbus domain area and input high-voltage ground wire Vgnd domain area.In practical application, driven according to half-bridge
Dynamic device, then only need 1 gate drive circuit domain area in Fig. 5.If single GaN power switch is opened using 3 low current GaN power
Pass is formed in parallel, then 6 GaN power switch domain areas are needed in Fig. 5；If single GaN power switch uses 4 low current GaN
Power switch is formed in parallel, then 8 GaN power switch domain areas are needed in Fig. 5.
Fig. 6 is a kind of practical layout figure in the GaN half-bridge domain area realized using the present invention.Third HEMT device ML1 editions
The connection of the source electrode and Vgnd in figure area and the 4th HEMT device ML2 domain area use the hypotenuse way of contact, be for
Adaptation current trend.Using the HEMT device of LGA package, source and drain terminal are all made of multi-fork and refer to parallel-connection structure, and Vgnd
Main electrical current converge and circulate in the left side in third HEMT device ML1 domain area and the 4th HEMT device ML2 domain area, therefore lean on
Electricity of the electric current of nearly third HEMT device ML1 domain area's left part convergence than third HEMT device ML1 domain area right part
Stream is big, so being attached by the way of hypotenuse, close to third HEMT device ML1 domain area left part
It is the top of bevel edge close to third HEMT device ML1 domain area's right part for the bottom of bevel edge.Third HEMT device ML1 editions
The drain electrode in figure area and the 4th HEMT device ML2 domain area and the connection of half-bridge output HB then use the right angled triangle of opposite direction
The bevel edge way of contact.First radiator uses cylindrical structure, and layout area is distributed in inside half-bridge output HB domain area.
The right end PL of second current-limiting resistance RL is arrived to the metal wire of third HEMT device ML1 grid end and the right end PL of the second current-limiting resistance RL
The wire lengths of 4th sub- HEMT device ML2 grid end must be stringent equal.The right end PH of current-limiting resistance RH is to the first HEMT device
The wire lengths of the HEMT device MH2 grid end of right end PH to second of the metal wire and current-limiting resistance RH of part MH1 grid end must be tight
Lattice are equal.In each metal throuth hole region in figure, how much are the position of specific through-hole and number of through-holes, can be according to different power
Grade and demand carry out differentiation design.The all metal layer filling regions in figure grey area.Assistant solves supplemented by heavy black line
Added region segmentation line.
Third gate drive circuit domain area, metal-oxide-semiconductor MP domain area, metal-oxide-semiconductor inside output voltage area 33 of the present invention
Mn domain area, third radiator domain area, VH domain area, VL domain area, output high voltage bus Vout+ domain area and output low pressure
The specific layout in bus Vout- domain area is realized, the similar layout type of Fig. 4 can be used.VH and VL domain area be respectively adopted with
Above-mentioned similar c-type surrounds structure, surrounds metal-oxide-semiconductor MP domain area and metal-oxide-semiconductor Mn domain area respectively；The c-type in VH and VL domain area
Surround on the right side of structure is respectively output high voltage bus Vout+ domain area and output low-voltage bus bar Vout- domain area；It is female to export high pressure
It is output capacitance C1 domain area between line Vout+ domain area and output low-voltage bus bar Vout- domain area；In addition detection circuit domain
Area can be laid out the right side in output capacitance C1 domain area.Half-bridge output HB domain area in the present invention in 1 domain area of GaN half-bridge connects
The left side in VH domain area is connect, the half-bridge output HB domain area in 2 domain area of GaN half-bridge connects the left side in VL domain area
Side.
Fig. 7 is the practical layout figure of controller and output feedback fraction in the low-voltage power supply area 34 realized using the present invention,
Include pfc controller U1 domain area, output feed circuit U2 domain area and low-voltage ground wire domain area 34-1.Signal PWL2, PWH2,
F1, f2 and f3 pass through through-hole connection signal.PWL2 and PWH2 signal is the low pressure pulsewidth that pfc controller U1 is output to gate driver
Signal, therefore PWL2 and PWH2 signal routing is it must be particularly noted that be first responsible for two metals of transmission PWL2 and PWH2 signal
Line length, width and thickness all must be stringent equal；Secondly two wires must use parallel cabling mode, hang down between each other
Straight distance is not more than 2mm；Furthermore the region that two wires layout is passed by must carry out isolation guarantor by low-voltage ground wire metallic region
Shield.4 domain area of input feedback circuit U uses the layout type similar with feed circuit U2 domain area is exported in Fig. 6 in the present invention
Realization, the metal wire for being in addition responsible for transmission PWL1 and PWH1 signal require as PWL2 and PWH2, are responsible for transmission PWL3
It is required also as PWL2 and PWH2 with the metal wire of PWH3 signal.Gray area in Fig. 6 is equally entirely metal layer filling
Region.The region segmentation line of assistant Xie Suojia supplemented by heavy black line.
Fig. 8 is using a kind of GaN non-bridge PFC power module for high-power charger realized in the embodiment of the present invention
Test waveform.It can be seen that the period of grid end PL and the PH signal waveform of GaN power switch is 1us, corresponding working frequency is
1MHz, raising and lowering waveform function is completely correct, and the GaN power module function that surface uses layout type of the present invention to realize is just
Really, technical solution of the present invention is practical.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (8)
1. being used for the GaN non-bridge PFC power module of high-power charger, characterized in that include: EMI filter circuit (U6), rectification
Capacitor C2, inductance L1, inductance L2, the first GaN half-bridge circuit (U7), the 2nd GaN half-bridge circuit (U8), metal-oxide-semiconductor MP, metal-oxide-semiconductor Mn,
Third gate drive circuit, output capacitance C1, output detection circuit (U3), output feed circuit (U2), input detecting circuit (U5),
Input feedback circuit (U4) and pfc controller (U1)；
Input high voltage AC bus AC is connected to the input terminal of EMI filter circuit (U6)；The High voltage output of EMI filter circuit (U6)
End Vac is connected to the upper end of commutation capacitor C2, the first input end of input detecting circuit (U5), the left end of inductance L1 and inductance L2
Left end；The low-voltage output Vacgnd of EMI filter circuit (U6) be connected to input detecting circuit (U5) the second input terminal,
The source of metal-oxide-semiconductor MP and the source of metal-oxide-semiconductor Mn；The high side that the right end VH of inductance L1 is connected to the first GaN half-bridge circuit (U7) is defeated
Enter the downside input terminal of end and the 2nd GaN half-bridge circuit (U8)；The right end VL of inductance L2 is connected to the first GaN half-bridge circuit (U7)
Downside input terminal and the 2nd GaN half-bridge circuit (U8) high side input terminal；First pulse width signal PWH1 of pfc controller (U1)
The high side and downside input terminal of the first GaN half-bridge circuit (U7), PFC control are connected respectively to the second pulse width signal PWL1 output end
The third pulse width signal PWH2 and the 4th pulse width signal PWL2 output end of device (U1) processed are connected respectively to the 2nd GaN half-bridge circuit
(U8) high side and downside input terminal, the 5th pulse width signal PWH3 and the 6th pulse width signal the PWL3 output of pfc controller (U1)
End is connected respectively to the high side and downside input terminal of third gate drive circuit；The half-bridge output end of first GaN half-bridge circuit (U7)
It is connected to output high voltage bus end Vout+, metal-oxide-semiconductor MP drain terminal, the second input port of output detection circuit (U3) and output electricity
Hold the upper end of C1；The half-bridge output end of 2nd GaN half-bridge circuit (U8) is connected to output low-voltage bus bar end Vout-, metal-oxide-semiconductor Mn
The lower end of drain terminal, the first input port of output detection circuit (U3) and output capacitance C1；The output of output detection circuit (U3)
It is anti-that voltage detection signal output end, output electric current measure signal output end and temperature detection signal output end are connected respectively to output
The input terminal of current feed circuit (U2)；Obtained output voltage feedback signal, output current feedback are handled through output feed circuit (U2)
Signal and temperature feedback signal are connected respectively to the input terminal of pfc controller (U1)；The input voltage of input detecting circuit (U5)
Detection signal output end, input electric cur- rent measure signal output end are connected respectively to the input terminal of input feedback circuit (U4), through defeated
Enter feed circuit (U4) obtained input voltage feedback signal of processing and input current feedback signal is connected respectively to pfc controller
(U1) input terminal.
2. the GaN non-bridge PFC power module according to claim 1 for high-power charger, characterized in that described
One GaN half-bridge circuit (U7) and the 2nd GaN half-bridge circuit (U8) use identical GaN half-bridge circuit, the GaN half-bridge circuit packet
It includes: the first gate drive circuit (H), the second gate drive circuit (L), the first GaN power switch, the 2nd GaN power switch, the first limit
Leakage resistance and the second current-limiting resistance；The high side input terminal of GaN half-bridge circuit is connected to the input terminal of the first gate drive circuit (H)；
The downside input terminal of GaN half-bridge circuit is connected to the input terminal of the second gate drive circuit (L)；First gate drive circuit (H) it is defeated
Outlet is connected to the left end of the first current-limiting resistance, and the right end of the first current-limiting resistance is connected to the grid end of the first GaN power switch, the
The output end of two gate drive circuits (L) is connected to the left end of the second current-limiting resistance, and the right end of the second current-limiting resistance is connected to second
The grid end of GaN power switch；The source of first GaN power switch, the i.e. high voltage input terminal of GaN half-bridge circuit, are connected to input
High voltage bus Vbus；The drain terminal of first GaN power switch is that half-bridge exports HB, and half-bridge output HB is connected to the 2nd GaN power and opens
The drain terminal of pass；The source of 2nd GaN power switch, the i.e. low pressure, input end of GaN half-bridge circuit, are connected to input low-voltage bus bar
Vgnd。
3. the GaN non-bridge PFC power module according to claim 1 for high-power charger, characterized in that described
First GaN power switch and the 2nd GaN power switch are all made of multiple low current GaN power switch parallel connections to realize that high current is defeated
Out, and it is all made of the HEMT device of LGA package form.
4. the GaN non-bridge PFC power module according to claim 3 for high-power charger, characterized in that circuit exists
Two-sided layout structure is used when practical laying out pattern, comprising: input higher-pressure region (31), the input area high voltage bus Vac (32), output
Voltage zone (33) and low-voltage power supply area (34)；The input higher-pressure region (31), the input area high voltage bus Vac (32), output voltage
Area (33) is distributed in front, and the low-voltage power supply area (34) is distributed in reverse side, all PWM pulsewidths letter between obverse and reverse
Number and input voltage measurement signal, input electric cur- rent measure signal, voltage sense signal, output electric current measure signal and
Temperature detection signal passes through through-hole connection signal；
It include: EMI filter circuit (U6) domain area, commutation capacitor C2 domain area, input inspection inside the input higher-pressure region (31)
Slowdown monitoring circuit (U5) domain area, input high voltage AC bus AC domain area and input high-voltage ground wire domain area；
It include: the first GaN half-bridge circuit (U7) domain area, the first radiator domain area, the inside the output voltage area (33)
Two GaN half-bridge circuit (U8) domain areas, the second radiator domain area, inductance L1 domain area, inductance L2 domain area, the driving of third grid
Circuit layout area, metal-oxide-semiconductor Mp domain area, metal-oxide-semiconductor Mn domain area, third radiator domain area, output capacitance C1 domain area, output
High voltage bus Vout+ domain area, output low-voltage bus bar Vout- domain area, VH domain area, VL domain area and output detection circuit
(U3) domain area；The first radiator domain area is inside the first GaN half-bridge circuit (U7) domain area, the second heat dissipation version
Scheme inside bis- GaN half-bridge circuit (U8) the domain area Qu；
The area the input high voltage bus Vac (32) is connected across between input higher-pressure region (31) and output voltage area (33), and input is high
It presses on the left of the area bus Vac and the right side in EMI filter circuit (U6) domain area is overlapped；Input the area high voltage bus Vac on the right side of simultaneously and
It is overlapped on the left of inductance L1 domain area and on the left of inductance L2 domain area in output voltage area；
Include pfc controller (U1) domain area, input feedback circuit (U4) domain area, output inside the low-voltage power supply area (34)
Feed circuit (U2) domain area and low-voltage ground wire domain area (34-1).
5. the GaN non-bridge PFC power module according to claim 3 for high-power charger, characterized in that described
One GaN half-bridge circuit (U7) domain area uses mutually isostructural GaN half-bridge domain with the 2nd GaN half-bridge circuit (U8) domain area
Area, the GaN half-bridge domain area include: the first gate drive circuit H domain area, the second gate drive circuit L domain area, the first current limliting electricity
Hinder domain area, the second current-limiting resistance domain area, first through hole domain area, the second through-hole domain area, third through-hole domain area, first
HEMT device domain area, the second HEMT device domain area, third HEMT device domain area, the 4th HEMT device domain area, first
Radiator domain area, half-bridge output HB domain area, input high voltage bus Vbus domain area and input high-voltage ground wire Vgnd domain area；
Wherein the first HEMT device and the second HEMT device parallel connection constitute the first GaN power switch, third HEMT device and the 4th HEMT
Device parallel connection constitutes the 2nd GaN power switch；The first radiator domain area is distributed in the inside in half-bridge output HB domain area.
6. the GaN non-bridge PFC power module according to claim 4 for high-power charger, characterized in that described defeated
Enter high voltage bus Vbus domain area using c-type semi-surrounding structure, is distributed in the space surrounded: first through hole domain area,
First gate drive circuit H domain area, the first current-limiting resistance domain area, the first HEMT device domain area and the second HEMT device domain
Area；The right side of on the left of the first HEMT device domain area and the second sub- HEMT device domain area left side the first current-limiting resistance of direction
End；
Two ends of the input high voltage bus Vbus domain area c-type semi-surrounding structure are all made of triangular structure of right angle, and 2
The bevel edge of right angled triangle is opposite, is separately connected the source electrode in the first HEMT device domain area and the second HEMT device domain area；Institute
It states and clips half-bridge output HB domain area between the first HEMT device domain area and the drain electrode in the second HEMT device domain area
The upper left corner, the shape in the upper left corner be an apex angle towards a left side and be acute angle isosceles triangle；
Input high-voltage ground wire Vgnd domain area uses same c-type semi-surrounding structure, is distributed in the space surrounded
Second through-hole domain area, the second gate drive circuit L domain area, the second current-limiting resistance domain area, third HEMT device domain area and
4th HEMT device domain area；Towards the on the left of the third HEMT device domain area and on the left of the domain area of the 4th HEMT device
The right end of two current-limiting resistances；
Two ends of the input high-voltage ground wire Vgnd domain area c-type semi-surrounding structure are all made of triangular structure of right angle, and 2
The bevel edge of right angled triangle is opposite, is separately connected the source electrode in third HEMT device domain area and the 4th HEMT device domain area；Institute
It states and clips half-bridge output HB domain area between third HEMT device domain area and the drain electrode in the 4th HEMT device domain area
The lower left corner, the shape in the lower left corner be an apex angle towards a left side and be acute angle isosceles triangle.
7. the GaN non-bridge PFC power module according to claim 6 for high-power charger, characterized in that described
The right end of one current-limiting resistance is to the metal wire of the first HEMT device grid end and the right end of the first current-limiting resistance to the second HEMT device
The wire lengths of grid end are strictly equal, and the length of two wires is respectively less than 5mm, at the same between angle less than 120
Degree；The right end of second current-limiting resistance is to the metal wire of third HEMT device grid end and the right end of the second current-limiting resistance to the 4th
The wire lengths of HEMT device grid end are strictly equal, and the length of two wires is respectively less than 5mm, at the same between angle
Less than 120 degree.
8. the GaN non-bridge PFC power module according to claim 4 for high-power charger, characterized in that be responsible for biography
Two wires of defeated first pulse width signal PWH1 and the second pulse width signal PWL1 are responsible for transmission third pulse width signal PWH2 and the
Two wires of four pulse width signal PWL2, and it is responsible for the two of transmission the 5th pulse width signal PWH3 and the 6th pulse width signal PWL3
Wires have following requirement:
One, two wires length, width and thickness all must be stringent equal；
Two, two wires must use parallel cabling mode, and mutual vertical range is not more than 2mm；
Three, the region that two wires layout is passed by must carry out insulation blocking by low-voltage ground wire.
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| WO2021139507A1 (en) * | 2020-01-09 | 2021-07-15 | 杭州中恒电气股份有限公司 | Totem-pole bridgeless pfc circuit, control method, electronic device, and medium |
| CN113595410A (en) * | 2021-04-19 | 2021-11-02 | 华南理工大学 | High-frequency high-efficiency half-bridge LLC resonant converter based on GaN device |
| CN113890328A (en) * | 2021-12-08 | 2022-01-04 | 成都天核科技有限公司 | Three-phase staggered parallel PFC circuit based on GaN power device |
| CN114977374A (en) * | 2022-04-12 | 2022-08-30 | 安徽奥源电子科技有限公司 | Bridgeless PFC switching power supply circuit |
| EP4329138A1 (en) * | 2022-08-22 | 2024-02-28 | Nanjing Chervon Industry Co., Ltd. | Charging apparatus |
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