CN206992983U - A kind of translation circuit and corresponding three-phase translation circuit and converting means - Google Patents
A kind of translation circuit and corresponding three-phase translation circuit and converting means Download PDFInfo
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- CN206992983U CN206992983U CN201720562629.4U CN201720562629U CN206992983U CN 206992983 U CN206992983 U CN 206992983U CN 201720562629 U CN201720562629 U CN 201720562629U CN 206992983 U CN206992983 U CN 206992983U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The utility model discloses a kind of translation circuit and corresponding three-phase translation circuit and converting means.In translation circuit, by adding an inductance, four diodes and two electric capacity in the I type translation circuits of prior art, so that I types translation circuit gate-controlled switch device and diode component can realize Sofe Switch, the power consumption of power device and diode component is reduced.Using the converting means of above-mentioned translation circuit, by setting the first circuit module or second circuit module and tertiary circuit module or the 4th circuit module, component of the prior art is combined with the component increased newly in the technical program, improvement cost is greatly reduced in the case of so as to be laid out in the internal wiring for not changing existing inversion/fairing substantially, topological structure is compact, busbar design is simple, extremely advantageous in electrical layout and structure design.
Description
Technical field
It the utility model is related to field of conversion of electrical energy, and in particular to a kind of I types translation circuit.
Background technology
As shown in figure 1, in the prior art, the level-conversion circuit of I types three includes the first gate-controlled switch device, second controllable opened
Close device, the 3rd gate-controlled switch device, the 4th gate-controlled switch device, the 5th diode D5, the 6th diode D6；First controllable opens
Close device, the second gate-controlled switch device, the 3rd gate-controlled switch device and the 4th gate-controlled switch device are sequentially connected in series in positive bus-bar and
Between negative busbar；5th diode D5 and the 6th diode D6 concatenations, the 5th diode D5 negative electrode are connected to the first gate-controlled switch
The tie point of device and the second gate-controlled switch device, the 6th diode D6 anode is connected to the 3rd gate-controlled switch device and the 4th can
Control the tie point of switching device；The tie point of second gate-controlled switch device and the 3rd gate-controlled switch device is as input/output terminal；
The tie point of 5th diode and the 6th diode is connected to center line；Wherein, the first gate-controlled switch device includes the first IGBT pipes Q1
The first sustained diode q1 being connected with its inverse parallel；Second gate-controlled switch device includes the 2nd IGBT pipes Q2 and anti-with it
The second sustained diode q2 being connected in parallel；3rd gate-controlled switch device includes the 3rd IGBT pipes Q3 and is connected with its inverse parallel
The 3rd sustained diode q3；4th gate-controlled switch device include the 4th IGBT pipes Q4 and be connected with its inverse parallel the 4th continue
Flow diode Dq4；And the first IGBT pipes Q1 colelctor electrode is connected to positive bus-bar, the 4th IGBT pipes Q4 emitter stage is connected to negative busbar；
In the prior art, also include being used to trigger the first IGBT pipes Q1, the 2nd IGBT pipes Q2, the 3rd IGBT pipes Q3 and the 4th IGBT certainly
Pipe Q4 controller.The level-conversion circuit of I types three of the prior art has single IGBT pipes compared to double level-conversion circuits
The advantages such as blocking voltage halves, harmonic wave is small, loss is low, efficiency is high.
In the level-conversion circuit of I types three, the power consumption of each IGBT pipes can be divided into on-state power consumption, break-make power consumption, wherein logical
Disconnected power consumption can separate logical stage power consumption and off-phases power consumption again.When working frequency is relatively low, on-state power consumption is main；But
When working frequency is higher, break-make power consumption then rises to main power consumption, wherein opening stage power dissipation ratio off-phases power consumption also
It is big.Therefore, in the case of higher operating frequencies, it is necessary to realize " Sofe Switch ", so-called " Sofe Switch " refers to gate-controlled switch
Device can realize ZVT (ZVS), Zero Current Switch (ZCS) or zero-voltage and zero-current switch (ZVZXCS), either
Curtage is risen by limited slope in make and break process.If Sofe Switch can not be realized, problems with occurs：
1st, power device (gate-controlled switch device) loss is big；And cause power device temperature to rise, not only make working frequency
It can not improve, and the electric current of power device, voltage capacity are also unable to reach rating index, make power device can not be in specified bar
Run under part, so as to restrict the application of three-level topology；
2nd, power device is easily secondary breakdown；Under the conditions of inductive load, there is peak voltage in power device when turning off；And
Under the conditions of capacitive load, peak current when power device is opened be present；So as to easily lead to second breakdown, work(is greatly endangered
The safe operation of rate device so that need to design larger safety operation area (SOA)；
3rd, larger EMI electromagnetic interferences are produced；When high-frequency work state is run, the parasitic electricity of the interpolar of power device in itself
Appearance is particularly important parameter.This interelectrode capacity can produce two kinds of unfavorable factors in the switching process of power device：(1) exist
When being opened under high voltage, the energy storage of interpolar parasitic capacitance is absorbed and dissipated in itself by device, certainly will produce temperature rise, and frequency gets over high temperature
Rise more serious；(2) dv/dt can be coupled to output end during interelectrode capacity voltage conversion, produce electromagnetic interference, make system unstable
It is fixed.In addition, interelectrode capacity can produce vibration, interference system normal work with the stray inductance in circuit；
4th, cause circuit topology very sensitive to the parasitic parameter of power device；When Sofe Switch can not be realized, Ke Nengcun
Problem is led directly in upper and lower bridge arm, and due to Sofe Switch can not be realized, open time delay (dead time) also be present in power device,
And at high frequencies, for influence of the deadband eliminating time to inverter performance, the corrective action taken make again be entirely
The design of system becomes complicated；
5th, need to design absorbing circuit, absorbing circuit is used to limit dv/ when di/dt and the shut-off when power device is opened
Dt, dynamic switch track is narrowed down in the SOA of direct current place of safety, ensure power device can safe operation, but absorbing circuit is not
Switching loss can be eliminated, and adds the design difficulty of whole converting means again, while can also result in energy regeneration process
Middle interfering for fly-wheel diode Reverse recovery and absorbing circuit causes larger stresses of parts；
6th, power device can produce noise pollution in HF switch, therefore can cause translation circuit to inputting, exporting filter
The requirement of ripple device is higher.
6 problems based on more than, there is an urgent need to realize the Sofe Switch of the level-conversion circuit of I types three.
Utility model content
The purpose of this utility model is solve the problems of the prior art, there is provided a kind of translation circuit and corresponding three-phase
Translation circuit and converting means, so that power device can realize that Sofe Switch works, so as to reduce power device and diode component
Power consumption, and solve problems of the prior art.
To reach above-mentioned purpose, the utility model adopts the following technical scheme that：
A kind of translation circuit, including the first gate-controlled switch device, the second gate-controlled switch device, the 3rd gate-controlled switch device,
4th gate-controlled switch device, the 5th diode, the 6th diode, inductance, the first diode, the second diode, the 3rd diode,
4th diode, the first electric capacity and the second electric capacity；Described the first gate-controlled switch device, the second gate-controlled switch device, the 3rd can
Control switching device and the 4th gate-controlled switch device are sequentially connected in series between positive bus-bar and negative busbar；The 5th described diode and
Six diodes concatenate, and the negative electrode of the 5th diode is connected to the tie point of the first gate-controlled switch device and the second gate-controlled switch device,
The anode of 6th diode is connected to the tie point of the 3rd gate-controlled switch device and the 4th gate-controlled switch device；Second gate-controlled switch device
The tie point of part and the 3rd gate-controlled switch device is as input/output terminal；Described inductance one end connection center line, it is another to be connected to
The tie point of 5th diode and the 6th diode；The first described diode and the second diode concatenation, the first diode
Negative electrode connects positive bus-bar, and the anode of the second diode is connected to the tie point of the first gate-controlled switch device and the second gate-controlled switch device,
The described end of the first electric capacity one is connected to the tie point of the first diode and the second diode, another to be connected to the second gate-controlled switch device
The tie point of part and the 3rd gate-controlled switch device；The 3rd described diode and the 4th diode concatenation, the moon of the 3rd diode
Pole is connected to the tie point of the 3rd gate-controlled switch device and the 4th gate-controlled switch device, and the anode of the 4th diode connects negative busbar, institute
The end of the second electric capacity one stated is connected to the tie point of the second gate-controlled switch device and the 3rd gate-controlled switch device, another to be connected to the 3rd
The tie point of diode and the 4th diode.
Further, the first described gate-controlled switch device is IGBT units or MOS cell, when the first gate-controlled switch device
For IGBT units when, described IGBT units include IGBT and managed and the diode that is connected with IGBT pipe inverse parallels；When first controllable
When switching device is MOS cell, described MOS cell can be for the metal-oxide-semiconductor with body diode or including the MOS without body diode
Pipe and anti-paralleled diode.
Further, the second described gate-controlled switch device is IGBT units or MOS cell, when the second gate-controlled switch device
For IGBT units when, described IGBT units include IGBT and managed and the diode that is connected with IGBT pipe inverse parallels；When second controllable
When switching device is MOS cell, described MOS cell can be for the metal-oxide-semiconductor with body diode or including the MOS without body diode
Pipe and anti-paralleled diode.
Further, the 3rd described gate-controlled switch device is IGBT units or MOS cell, when the 3rd gate-controlled switch device
For IGBT units when, described IGBT units include IGBT and managed and the diode that is connected with IGBT pipe inverse parallels；When the 3rd controllable
When switching device is MOS cell, described MOS cell can be for the metal-oxide-semiconductor with body diode or including the MOS without body diode
Pipe and anti-paralleled diode.
Further, the 4th described gate-controlled switch device is IGBT units or MOS cell, when the 4th gate-controlled switch device
For IGBT units when, described IGBT units include IGBT and managed and the diode that is connected with IGBT pipe inverse parallels；When the 4th controllable
When switching device is MOS cell, described MOS cell can be for the metal-oxide-semiconductor with body diode or including the MOS without body diode
Pipe and anti-paralleled diode.
A kind of three-phase translation circuit, including the first translation circuit, the second translation circuit, the 3rd translation circuit；Described
One translation circuit, the second translation circuit and the 3rd translation circuit use a kind of above-mentioned translation circuit；First translation circuit
The center line of center line, the center line of the second translation circuit and the 3rd translation circuit is connected with each other.
A kind of converting means, including above-mentioned translation circuit, for realizing unsteady flow, make electric energy flow to AC from DC side
Or electric energy is set to flow to DC side from AC.
Further, the first diode in translation circuit, the second diode and the first electric capacity and the first gate-controlled switch device
Part is integrated and is arranged to the first circuit module or is arranged to second circuit module with the second gate-controlled switch device integration；When the one or two pole
When pipe, the second diode and the first electric capacity and the first gate-controlled switch device integration are arranged to the first circuit module, described first
First end of circuit module is connected to the negative electrode of the first diode, for connecting positive bus-bar；The second of the first described circuit module
The anode of the second diode is connected to, for connecting the second gate-controlled switch device；3rd termination of the first described circuit module
To one end of the first electric capacity, for connecting the tie point of the second gate-controlled switch device and the 3rd gate-controlled switch device；When the one or two
When pole pipe, the second diode and the first electric capacity and the second gate-controlled switch device integration are arranged to second circuit module, described
4th end of two circuit modules is connected to the negative electrode of the first diode, for connecting positive bus-bar；The of described second circuit module
Five ends are connected to the anode of the second diode, for connecting the first gate-controlled switch device；6th end of described second circuit module
One end of the first electric capacity is connected to, for connecting the 3rd gate-controlled switch device.
Further, the 3rd diode in translation circuit, the 4th diode and the second electric capacity and the 3rd gate-controlled switch device
Part is integrated and is arranged to tertiary circuit module or is arranged to the 4th circuit module with the 4th gate-controlled switch device integration；When the three or two pole
When pipe, the 4th diode and the second electric capacity and the 3rd gate-controlled switch device integration are arranged to tertiary circuit module, the described the 3rd
7th end of circuit module is connected to one end of the second electric capacity, for connecting the second gate-controlled switch device；Described tertiary circuit mould
8th end of block is connected to the negative electrode of the 3rd diode, for connecting the 4th gate-controlled switch device；Described tertiary circuit module
9th end is connected to the anode of the 4th diode, for connecting negative busbar；When the 3rd diode, the 4th diode and the second electric capacity with
When 4th gate-controlled switch device integration is arranged to four circuit modules, the tenth end of the 4th described circuit module is connected to the second electricity
One end of appearance, for connecting the tie point of the second gate-controlled switch device and the 3rd gate-controlled switch device；The 4th described circuit mould
11st end of block is connected to the negative electrode of the 3rd diode, for connecting the 3rd gate-controlled switch device；The 4th described circuit module
The 12nd end be connected to the anode of the 4th diode, for connecting negative busbar.
Technical scheme described in the utility model is relative to prior art, the beneficial effect of acquirement：
1st, in the translation circuit in the utility model, all gate-controlled switch devices and diode component can realize soft open
Close, i.e. ZVT (ZVS), Zero Current Switch (ZCS) or zero-voltage and zero-current switch (ZVZCS), or with limited dv/
Dt and di/dt carries out break-make switching.So as to significantly reduce the switching losses of gate-controlled switch device, translation circuit is improved
Operating efficiency；Make power device be not easy to be secondary breakdown, while be eliminated dead time；
2nd, gate-controlled switch device carries out break-make switching with limited dv/dt and di/dt, thus system EMI electromagnetic interferences compared with
Unrealized Sofe Switch will optimize much；
3rd, because the switching losses of gate-controlled switch device diminish so that converting means can exponentially work in conventional transformation
On device working frequency, therefore output filter parameter request step-down needed for converting means, size can also reduce at double, from
And be advantageous to further reduce Material Cost, reduction product size, improve product power density；
4th, compare and an inductance, four diodes and two electric capacity are merely add in prior art, the utility model, increase
Add number of devices few, simple and compact structure, it is not necessary to extra increase gate-controlled switch device and control circuit；
5th, because two groups of diode components and electric capacity are respectively connected across a gate-controlled switch device both ends, the first circuit mould is formed
Block or second circuit module and tertiary circuit module or the 4th circuit module, so as to by component of the prior art and this skill
The component increased newly in art scheme combines, the feelings that can be laid out in the internal wiring for not changing existing inversion/fairing substantially
The technical program is realized under condition, greatly reduces improvement cost, topological structure is compact, and busbar design is simple, extremely advantageous in electricity
Gas is laid out and structure design.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding utility model, forms one of the present utility model
Point, schematic description and description of the present utility model is used to explain the utility model, does not form to of the present utility model
Improper restriction.In the accompanying drawings：
Fig. 1 is the schematic diagram of I types translation circuit in the prior art；
Fig. 2 is the schematic diagram of the utility model translation circuit embodiment；
Fig. 3 is the schematic diagram of the utility model three-phase translation circuit embodiment；
Fig. 4 is the electrical connection schematic diagram of the utility model converting means embodiment one；
Fig. 5 is the electrical connection schematic diagram of the utility model converting means embodiment two；
Fig. 6 is that the embodiment of the utility model translation circuit carries out DC/AC conversion, when inverter output voltage is positive half period
Positive level is to the operating diagram before the zero level change of current；
Fig. 7 is that the embodiment of the utility model translation circuit carries out DC/AC conversion, when inverter output voltage is positive half period
First stage operating diagram of the positive level to the zero level change of current；
Fig. 8 is that the embodiment of the utility model translation circuit carries out DC/AC conversion, when inverter output voltage is positive half period
Second stage operating diagram of the positive level to the zero level change of current；
Fig. 9 is that the embodiment of the utility model translation circuit carries out DC/AC conversion, when inverter output voltage is positive half period
Zero level is to the operating diagram before the positive level change of current；
Figure 10 is that the embodiment of the utility model translation circuit carries out DC/AC conversion, and inverter output voltage is positive half period
When phase III operating diagram from zero level to the positive level change of current；
Figure 11 is that the embodiment of the utility model translation circuit carries out DC/AC conversion, and inverter output voltage is positive half period
When fourth stage operating diagram from zero level to the positive level change of current；
Figure 12 is that the embodiment of the utility model translation circuit carries out AC/DC conversion, and AC-input voltage is positive half period
When positive level to the operating diagram before the zero level change of current；
Figure 13 is that the embodiment of the utility model translation circuit carries out AC/DC conversion, and AC-input voltage is positive half period
When first stage operating diagram from positive level to the zero level change of current；
Figure 14 is that the embodiment of the utility model translation circuit carries out AC/DC conversion, and AC-input voltage is positive half period
When second stage operating diagram from positive level to the zero level change of current；
Figure 15 is that the embodiment of the utility model translation circuit carries out AC/DC conversion, and AC-input voltage is positive half period
When zero level to the operating diagram before the positive level change of current；
Figure 16 is that the embodiment of the utility model translation circuit carries out AC/DC conversion, and AC-input voltage is positive half period
When operating diagram from zero level to the positive level change of current.
Embodiment
In order that technical problem to be solved in the utility model, technical scheme and beneficial effect are clearer, clear, with
Under in conjunction with the accompanying drawings and embodiments, the utility model is further elaborated.It is it should be appreciated that described herein specific real
Example is applied only to explain the utility model, is not used to limit the utility model.
Fig. 2 shows the schematic diagram of the embodiment of the utility model translation circuit.As shown in Fig. 2 the conversion in embodiment
Circuit include the first gate-controlled switch device, the second gate-controlled switch device, the 3rd gate-controlled switch device, the 4th gate-controlled switch device,
First diode D1, the second diode D2, the 3rd diode D3, the 4th diode D4, the 5th diode D5, the 6th diode
D6, the first electric capacity C1, the second electric capacity C2, the 3rd polar capacitor C3, quadripolarity electric capacity C4 and inductance L.
Wherein, the first gate-controlled switch device uses IGBT units, including the first IGBT pipes Q1 and is connected with its inverse parallel
First sustained diode q1；Second gate-controlled switch device uses IGBT units, including the 2nd IGBT pipes Q2 and with its inverse parallel
Second sustained diode q2 of connection；3rd gate-controlled switch device uses IGBT units, including the 3rd IGBT pipes Q3 and anti-with it
The 3rd sustained diode q3 being connected in parallel；4th gate-controlled switch device uses IGBT units, including the 4th IGBT pipes Q4 and
The 4th sustained diode q4 being connected with its inverse parallel.Above-mentioned inverse parallel connection, specifically refers to that the anode of diode connects
The emitter stage of IGBT pipes, and the negative electrode of diode connects the colelctor electrode of IGBT pipes.Certainly, gate-controlled switch device can also be used MOS mono-
Member, described MOS cell can be for the metal-oxide-semiconductors with body diode or including the metal-oxide-semiconductor without body diode and the pole of inverse parallel two
Pipe.
First gate-controlled switch device, the second gate-controlled switch device, the 3rd gate-controlled switch device and the 4th gate-controlled switch device
It is sequentially connected in series between positive bus-bar and negative busbar.Specifically, the first IGBT pipes Q1 colelctor electrode meets positive bus-bar, the first IGBT
Pipe Q1 emitter stage connects the 2nd IGBT pipes Q2 colelctor electrode, and the 2nd IGBT pipes Q2 emitter stage connects the 3rd IGBT pipes Q3 current collection
Pole, the 3rd IGBT pipes Q3 emitter stage connect the 4th IGBT pipes Q4 colelctor electrode, and the 4th IGBT pipes Q4 emitter stage connects negative busbar.
5th diode D5 and the 6th diode D6 concatenations, the 5th diode D5 negative electrode be connected to the first IGBT pipes Q1 and
2nd IGBT pipes Q2 tie point, the 6th diode D6 anode are connected to the 3rd IGBT pipes Q3 and the 4th IGBT pipes Q4 connection
Point.5th diode D5 anode is connected to the 6th diode D6 negative electrode.
3rd polar capacitor C3 positive pole connects positive bus-bar, and negative pole connects center line；Quadripolarity electric capacity C4 positive pole connects center line, bears
Pole connects negative busbar.
Inductance L one end connects neutral terminal, another tie point for being connected to the 5th diode D5 and the 6th diode D6.
First diode D1 and the second diode D2 concatenations, the first diode D1 negative electrode connect positive bus-bar, the second diode
D2 anode connects the first IGBT pipes Q1 and the 2nd IGBT pipes Q2 tie point, and the first diode D1 anode meets the second diode D2
Negative electrode.A first electric capacity C1 termination first diode D1 and the second diode D2 tie point, it is another to be connected to second
IGBT pipes Q2 and the 3rd IGBT pipes Q3 tie point.
3rd diode D3 and the 4th diode D4 concatenations, the 3rd diode D3 negative electrode meet the 3rd IGBT pipes Q3 and the
Four IGBT pipes Q4 tie point, the 3rd diode D3 anode connect the 4th diode D4 negative electrode.4th diode D4 anode
Connect negative busbar.Second electric capacity C2 termination a 3rd diode D3 and the 4th diode D4 tie point, it is another to be connected to second
IGBT pipes Q2 and the 3rd IGBT pipes Q3 tie point.
The translation circuit of the present embodiment, it is possible to achieve in inversion and switching process, all gate-controlled switch devices and two poles
Tube device can realize Sofe Switch, i.e. ZVT (ZVS), Zero Current Switch (ZCS) or zero-voltage and zero-current switch
(ZVZCS), or with limited dv/dt and di/dt break-make switching is carried out.Specifically：
When translation circuit works in inversion, including inverter output voltage is positive half period and inverter output voltage is negative half
Two half periods of cycle, each half period are divided into positive/negative level to the zero level change of current and zero level to the positive/negative level change of current two again
Individual process：
When inverter output voltage is positive half period, positive level is as follows to zero level commutation course：
Fig. 6 shows positive level to the state before the zero level change of current.Positive level is to before the zero level change of current, the first IGBT pipes
Q1 and the 2nd IGBT pipes Q2 are in the conduction state, and the 3rd IGBT pipes Q3 and the 4th IGBT pipes Q4 are in cut-off state.Electric current is from just
Bus, through the first IGBT pipes Q1 and the 2nd IGBT pipes Q2 flow direction loads Z.Because the 2nd IGBT pipes Q2 is turned on, therefore the first electric capacity
C1 is in no-voltage discharge condition.Because the first IGBT pipes Q1 and the 2nd IGBT pipes Q2 are in the conduction state, load output point electricity
Flat pliers position is charged to Vdc states in positive bus-bar, the second electric capacity C2.And inductance L electric current is zero.
The working condition of Fig. 7 shows positive level into zero level commutation course first stage.In the first phase, second
IGBT pipes Q2 is tended to remain on, and the 4th IGBT pipes Q4 keeps cut-off state, and the first IGBT pipes Q1 is then gone to from conducting state
Cut-off state, the 3rd IGBT pipes Q3 then go to conducting state from cut-off state.As shown in fig. 7, the second electric capacity C2 passes through the four or two
Pole pipe D4 discharges to load Z.After the completion of the second electric capacity C2 electric discharges, the 4th diode D4 cut-offs.First stage completes.Due to
Voltage is gradually discharged to zero on two electric capacity C2.Therefore, voltages of the first IGBT pipes Q1 during cut-off is gone to from conducting
It is to start from scratch to establish with limited dV/dt.The electric current for loading Z is then provided by the second electric capacity C2.Therefore, the first IGBT pipes Q1
Turned off in a manner of no-voltage, and the 3rd IGBT pipes Q3 does not have electric current process, the loss of turn-on and turn-off opening overall process
All it is zero, belongs to typical Sofe Switch process.
Fig. 8 shows the working condition of positive level second stage into zero level commutation course.After first stage terminates, the
Three sustained diode q3 and the 4th sustained diode q4 start afterflow conducting.Output level clamper is loaded in-Vdc/2 level.
Now, inductance L starts energy storage by the 5th diode D5, the 2nd IGBT pipes Q2.Inductance L electric current is then started from scratch linear increasing
Add.At the same time, the 3rd sustained diode q3 and the 4th sustained diode q4 electric current is then reduced on year-on-year basis.When the 3rd afterflow two
After pole pipe Dq3 and the 4th sustained diode q4 electric current are zero, commutation course is completed.Now, the 3rd sustained diode q3 and
4th sustained diode q4 ends, by the 5th diode D5, the 2nd IGBT pipe Q2 carry load electric currents.Due to flowing through inductance L
Electric current can not be mutated, it is necessary to start from scratch linearly increasing, therefore, in the 3rd sustained diode q3, the 4th continuous in above procedure
The curent change occurred in stream diode Dq4, the 2nd IGBT pipes Q2 and the 5th diode D5 is all with limited current changing rate
What di/dt was carried out.So in second stage, all gate-controlled switch devices and diode component are all operated in Sofe Switch state.
When inverter output voltage is positive half period, zero level is as follows to positive level commutation course：
Fig. 9 shows inverter output voltage when being positive half period, and positive level is to the state after the zero level change of current, in other words
Zero level is to the state before the positive level change of current.Zero level is to before the positive level change of current, at the first IGBT pipes Q1 and the 4th IGBT pipes Q4
In cut-off state, the 2nd IGBT pipes Q2 and the 3rd IGBT pipes Q3 are in the conduction state.Now, electric current flows through the five or two from inductance L
Pole pipe D5 and the 2nd IGBT pipes Q2 cuts Z power supplies to be negative.Now, although the 3rd IGBT pipes Q3 is turned on, no electric current flows through, and
First electric capacity C1 and the second electric capacity C2 are in no-voltage discharge condition.
The working condition of Figure 10 shows zero level into positive level commutation course phase III.In the phase III, the
Two IGBT pipes Q2 are tended to remain on, and the 4th IGBT pipes Q4 keeps cut-off state, and the first IGBT pipes Q1 then turns from cut-off state
To conducting state, the 3rd IGBT pipes Q3 then goes to cut-off state from conducting state.As shown in Figure 10, in transfer process, first
IGBT pipes Q1 upper half busbar voltage exports clamper in Vdc/2 level by the first IGBT pipes Q1, the 5th diode D5, to inductance L
Reversely pressurization, forces inductance L electric currents linearly to reduce.At the same time, upper half bus is managed by the first IGBT pipes Q1 and the 2nd IGBT
Q2 establishes current supply circuit to load.Simultaneously deposit while work in above-mentioned two loop.As inductive current gradually decreases, load current to
First IGBT pipes Q1 and the 2nd IGBT pipe Q2 transition.When inductive current is kept to zero, the 5th diode D5 reversely ends.It is above-mentioned
During, conducting state moment is gone to from cut-off state in the first IGBT pipes Q1, because inductance L electric current is load current, because
This first IGBT pipe Q1 turn on process is zero current passing, and electric currents of the first IGBT pipes Q1 in opening process is with limited
Di/dt establish, so opening for the first IGBT pipes Q1 is Sofe Switch mode of operation.And the 3rd IGBT pipes Q3 is from conducting state
Go to during cut-off state all without electric current by belonging to no-voltage, zero current cut-off, and belong to Sofe Switch Working mould
Formula.
Figure 11 shows the working condition of zero level fourth stage into positive level commutation course.After the completion of phase III,
Because the second electric capacity C2 voltages are zero, load output level clamper is in Vdc/2 level.Therefore, upper half bus passes through the first IGBT
Pipe Q1, the 2nd IGBT pipes Q2, the 3rd diode D3, the 6th diode D6 and inductance L charge to the second electric capacity C2.Due to inductance L
Presence, when the second electric capacity C2 voltages are charged to Vdc, the 3rd diode D3 and the 6th diode D6 reversely end, and charging is changed
Stream process is completed, and returns to the state to load Z power supplies, i.e. Fig. 6 state by the first IGBT pipes Q1 and the 2nd IGBT pipes Q2.
In the second electric capacity C2 charging processes, the 3rd diode D3, the 6th diode D6 are with limited due to being connected with inductance L
Current changing rate di/dt turn on and cut-off.Therefore, in the 3rd diode D3 and the 6th diode D6 conductings and procedures of turn-off
Switching loss is very low.
Change of current when commutation course and inverter output voltage when inverter output voltage is negative half-cycle are positive half period
Journey is similar, and negative level is equally required for undergoing two stages to the zero level change of current or zero level to the negative level change of current, herein not
It is described in detail again.
When translation circuit works in rectification, including AC-input voltage is positive half period and AC-input voltage is negative half
Two half periods of cycle, each half period are divided into positive/negative level to the zero level change of current and zero level to the positive/negative level change of current two again
Individual process：
When AC-input voltage is positive half period, positive level is as follows to zero level commutation course：
Figure 12 shows positive level to the state before the zero level change of current.Positive level is to before the zero level change of current, the first IGBT pipes
Q1 and the 2nd IGBT pipes Q2 are in the conduction state, and the 3rd IGBT pipes Q3 and the 4th IGBT pipes Q4 are in cut-off state.Rectified current
Bus is flowed to by the second sustained diode q2 and the first sustained diode q1.Because the 2nd IGBT pipes Q2 is turned on, therefore the
One electric capacity C1 is in no-voltage discharge condition.Because the first IGBT pipes Q1 and the 2nd IGBT pipes Q2 is turned on, therefore the second electric capacity C2
Vdc states are charged to, now inductance L electric current is zero.
The working condition of Figure 13 shows positive level into zero level commutation course first stage.In the first phase,
Two IGBT pipes Q2 are tended to remain on, and the 4th IGBT pipes Q4 keeps cut-off state, and the first IGBT pipes Q1 then turns from conducting state
To cut-off state, the 3rd IGBT pipes Q3 then goes to conducting state from cut-off state.During this, the 3rd IGBT pipes Q3, the 6th
Diode D6 and inductance L and input source Z establishes loop.Due to inductance L presence, after the 3rd IGBT pipes Q3 conductings, inductance L electricity
Stream is started from scratch linearly increasing.At the same time, the first sustained diode q1 and the second sustained diode q2 electric current phase are flowed through
Linear reduction is answered, until inductance L electric current reaches rectified current, now the first sustained diode q1 and the pole of the second afterflow two
Pipe Dq2 ends.In this stage, due to the first sustained diode q1 presence, the first IGBT pipes Q1 goes to from conducting state and cut
Only the process of state belongs to no-voltage, zero current cut-off.And because inductance L presence, the 3rd IGBT pipes Q3 turn from cut-off state
To conducting state, electric current start from scratch it is linearly increasing, therefore the 3rd IGBT pipe Q3 turn on process belong to zero electricity
Flow open-minded, and Sofe Switch process.
Figure 14 shows the working condition of positive level second stage into zero level commutation course.After the completion of first stage,
First sustained diode q1 and the second sustained diode q2 cut-offs.Second electric capacity C2 passes through the 3rd IGBT pipes Q3, the four or two pole
Pipe D4 and inductance L start to discharge.After discharging into zero, second stage is completed.
When AC-input voltage is positive half period, zero level is as follows to positive level commutation course：
Figure 15 show positive level terminate to zero level commutation course after state, that is to say zero level to the positive level change of current
State before.Now, the second electric capacity C2 electric discharges terminate, and rectification is carried by the 3rd IGBT pipes Q3, the 6th diode D6, inductance L
Electric current.First IGBT pipes Q1 and the 4th IGBT pipes Q4 is in cut-off state, and the 2nd IGBT pipes Q2 and the 3rd IGBT pipes Q3, which are in, to be led
Logical state, but wherein, the 2nd IGBT pipes Q2 does not have electric current to flow through.And the first electric capacity C1 and the second electric capacity C2 are in zero electric discharge shape
State.Electric current by inductance L is rectified current.
Figure 16 shows zero level to the working condition of positive level commutation course.Zero level is to during the positive level change of current, and second
IGBT pipes Q2 is tended to remain on, and the 4th IGBT pipes Q4 keeps cut-off state, and the first IGBT pipes Q1 is then gone to from cut-off state
Conducting state, the 3rd IGBT pipes Q3 then go to cut-off state from conducting state.When the 3rd IGBT pipes go to cut-off state, due to
Second electric capacity C2 presence, rectified current from it is original flowed through the 3rd IGBT pipes Q3 and went to flow through the second electric capacity C2, to the second electric capacity
C2 charges.When the second electric capacity C2 completes to charge, inductance L electric current vanishing, rectified current is through the second sustained diode q2 and the
One sustained diode q1 completes the change of current, so as to return to the positive level shown in Figure 13 to the working condition before the zero level change of current.On
During stating, the 3rd IGBT pipes Q3 is ending moment, and due to the second electric capacity C2 presence, the 3rd IGBT pipes Q3 voltage is linear
Increased, therefore, the 3rd IGBT pipes Q3 procedures of turn-off belongs to zero-voltage zero-current procedures of turn-off, is Sofe Switch process.And the
One IGBT pipes from cut-off state during conducting state is gone to, and without flow through electric current, therefore is fallen within zero-voltage zero-current and is cut
Only process, it is Sofe Switch process.Due to inductance L presence, the 3rd diode D3 and the 6th diode D6 are in procedures of turn-off, electricity
Stream is the linear reduction in a manner of di/dt, therefore falls within Sofe Switch process.
Change of current when commutation course and AC-input voltage when AC-input voltage is negative half-cycle are positive half period
Journey is similar, and negative level is also similar to the zero level change of current or zero level to the commutation course of negative level, will not be described in detail herein.
In summary, can be realized using the translation circuit in embodiment, all gate-controlled switch devices and diode component
Sofe Switch, i.e. ZVT (ZVS), Zero Current Switch (ZCS) or zero-voltage and zero-current switch (ZVZCS), or with limited
Dv/dt and di/dt carries out break-make switching.So as to significantly reduce the switching losses of gate-controlled switch device, conversion electricity is improved
The operating efficiency on road, make power device be not easy to be secondary breakdown, while be eliminated dead time.Simultaneously gate-controlled switch device with
Limited dv/dt and di/dt carries out break-make switching, therefore system EMI electromagnetic interferences are relatively not implemented Sofe Switch and optimized much.By
Diminish in the switching losses of gate-controlled switch device so that converting means can exponentially work in conventional transformation device working frequency
On, therefore output filter parameter request step-down needed for converting means, size can also reduce at double, so as to be advantageous into one
Step reduces Material Cost, reduction product size, improves product power density.Compare only increases in prior art, the present embodiment
One inductance, four diodes and two electric capacity, increase number of devices is few, simple and compact structure, it is not necessary to extra increase
Gate-controlled switch device and control circuit.
Fig. 3 shows the embodiment schematic diagram of three-phase translation circuit in the utility model.As shown in figure 3, in embodiment
Three-phase translation circuit includes the first translation circuit, the second translation circuit, the 3rd translation circuit；First translation circuit, the second conversion
Translation circuit described in the embodiment of circuit and the 3rd translation circuit using above-mentioned translation circuit；In first translation circuit
The center line of line, the center line of the second translation circuit and the 3rd translation circuit is connected with each other.
Above-mentioned three-phase translation circuit can equally realize that gate-controlled switch device is soft as a result of foregoing translation circuit
The effect of switch.
Fig. 4 is the schematic diagram of the embodiment one of converting means.The converting means employs translation circuit as described in Figure 2.
Wherein, the first diode D1, the second diode D2, the first electric capacity C1 and the first gate-controlled switch device integration are arranged to
First circuit module U1, wherein the first gate-controlled switch device includes the first IGBT pipes Q1 and the first afterflow being connected with its inverse parallel
Diode Dq1.First circuit module U1 is provided with the first connection end S1, second connection end S2 and the 3rd connection end S3；Described
One connection end S1 is connected to the first diode D1 negative electrode, for connecting positive bus-bar；Described second connection end S2 is connected to the two or two
Pole pipe D2 anode, for connecting the second gate-controlled switch device；The 3rd described connection end S3 is connected to the one of the first electric capacity C1
End, for connecting the tie point of the second gate-controlled switch device and the 3rd gate-controlled switch device.And in the first circuit module U1, each member
Device keeps their annexations in the translation circuit described in Fig. 2.
Meanwhile the 3rd diode D3, the 4th diode D4, the second electric capacity C2 are arranged to the 4th gate-controlled switch device integration
4th circuit module U4, wherein the 4th gate-controlled switch device includes the 4th IGBT pipes Q4 and the 4th afterflow being connected with its inverse parallel
Diode Dq4.4th circuit module U4 is provided with the tenth connection end S10, the 11st connection end S11 and the 12nd connection end S12；Institute
The tenth connection end S10 stated is connected to the second electric capacity C2 one end, for connecting the second gate-controlled switch device and the 3rd gate-controlled switch
The tie point of device；The 11st described connection end S11 is connected to the 3rd diode D3 negative electrode, for connecting the 3rd gate-controlled switch
Device；The 12nd described connection end S12 is connected to the anode of the 4th diode, for connecting negative busbar.And the 4th circuit module
In U4, each component keeps their annexations in the translation circuit described in Fig. 2.
Fig. 5 is the schematic diagram of the embodiment two of converting means.The converting means employs translation circuit as described in Figure 2.
Wherein, the first diode D1, the second diode D2, the first electric capacity C1 and the second gate-controlled switch device integration are arranged to
Second circuit module U2, wherein the second gate-controlled switch device includes the 2nd IGBT pipes Q2 and the first afterflow being connected with its inverse parallel
Diode Dq2.Second circuit module U2 is provided with the 4th connection end S4, the 5th connection end S5 and the 6th connection end S6；Described
Four connection end S4 are connected to the first diode D1 negative electrode, for connecting positive bus-bar；The 5th described connection end S5 is connected to the two or two
Pole pipe D2 anode, for connecting the first gate-controlled switch device；The 6th described connection end S6 is connected to the one of the first electric capacity C1
End, for connecting the 3rd gate-controlled switch device；And in second circuit module U2, each component keeps them in the change described in Fig. 2
The annexation changed in circuit.
Meanwhile the 3rd diode D3, the 4th diode D4, the second electric capacity C2 are arranged to the 3rd gate-controlled switch device integration
4th circuit module U3, wherein the 3rd gate-controlled switch device includes the 3rd IGBT pipes Q3 and the 3rd afterflow being connected with its inverse parallel
Diode Dq3.Tertiary circuit module U4 is provided with the 7th connection end S7, the 8th connection end S8 and the 9th connection end S9；Described
Seven connection end S7 are connected to the second electric capacity C2 one end, for connecting the second gate-controlled switch device；The 8th described connection end S8 connects
To the 3rd diode D3 negative electrode, for connecting the 4th gate-controlled switch device；The 9th described connection end S9 is connected to the four or two pole
Pipe D4 anode, for connecting negative busbar；And in tertiary circuit module U3, each component keeps them in the conversion described in Fig. 2
Annexation in circuit.
In addition to both examples above, the first circuit module U1 or second circuit module U2 can with individualism, the 3rd
Circuit module U3 or the 4th circuit module U4 can also individualism, the first circuit module U1 can match somebody with somebody with tertiary circuit module U3
Close, second circuit module U2 can also coordinate with the 4th circuit module U4.
From the embodiment of above-mentioned two converting means it will be seen that because two groups of diode components and electric capacity respectively bridge
At a gate-controlled switch device both ends, the first circuit module or second circuit module and tertiary circuit module or the 4th electricity are formed
Road module, so as to which component of the prior art be combined with the component increased newly in the technical program, it can not change substantially
The technical program is realized in the case of the internal wiring layout for becoming existing inversion/fairing, improvement cost is greatly reduced, opens up
Flutter compact-sized, busbar design is simple, extremely advantageous in electrical layout and structure design.
Preferred embodiment of the present utility model is description above described, it is to be understood that the utility model is not limited to
Embodiment is stated, and the exclusion to other embodiment should not be regarded as.By enlightenment of the present utility model, those skilled in the art combine
The change that known or prior art, knowledge are carried out also should be regarded as in the scope of protection of the utility model.
Claims (9)
1. a kind of translation circuit, including the first gate-controlled switch device, the second gate-controlled switch device, the 3rd gate-controlled switch device,
Four gate-controlled switch devices, the 5th diode and the 6th diode；Described the first gate-controlled switch device, the second gate-controlled switch device
Part, the 3rd gate-controlled switch device and the 4th gate-controlled switch device are sequentially connected in series between positive bus-bar and negative busbar；Described the 5th
Diode and the 6th diode concatenation, the negative electrode of the 5th diode are connected to the first gate-controlled switch device and the second gate-controlled switch device
Tie point, the anode of the 6th diode is connected to the tie point of the 3rd gate-controlled switch device and the 4th gate-controlled switch device；Second
The tie point of gate-controlled switch device and the 3rd gate-controlled switch device is as input/output terminal；
It is characterized in that in addition to inductance, the first diode, the second diode, the 3rd diode, the 4th diode, the first electric capacity
With the second electric capacity；
Described inductance one end connection center line, another tie point for being connected to the 5th diode and the 6th diode；
The first described diode and the second diode concatenation, the negative electrode of the first diode connect positive bus-bar, the sun of the second diode
Pole is connected to the tie point of the first gate-controlled switch device and the second gate-controlled switch device, and the described end of the first electric capacity one is connected to the first two
The tie point of pole pipe and the second diode, another connection for being connected to the second gate-controlled switch device and the 3rd gate-controlled switch device
Point；
The 3rd described diode and the 4th diode concatenation, the negative electrode of the 3rd diode are connected to the 3rd gate-controlled switch device and the
The tie point of four gate-controlled switch devices, the anode of the 4th diode connect negative busbar, and the described end of the second electric capacity one is connected to second can
Control the tie point of switching device and the 3rd gate-controlled switch device, another connection for being connected to the 3rd diode and the 4th diode
Point.
2. a kind of translation circuit as claimed in claim 1, it is characterized in that, the first described gate-controlled switch device is IGBT units
Or MOS cell, when the first gate-controlled switch device is IGBT units, described IGBT units include IGBT and manage and managed with IGBT anti-
The diode being connected in parallel；When the first gate-controlled switch device is MOS cell, described MOS cell can be with body diode
Metal-oxide-semiconductor or including the metal-oxide-semiconductor and anti-paralleled diode without body diode.
3. a kind of translation circuit as claimed in claim 1, it is characterized in that, the second described gate-controlled switch device is IGBT units
Or MOS cell, when the second gate-controlled switch device is IGBT units, described IGBT units include IGBT and manage and managed with IGBT anti-
The diode being connected in parallel；When the second gate-controlled switch device is MOS cell, described MOS cell can be with body diode
Metal-oxide-semiconductor or including the metal-oxide-semiconductor and anti-paralleled diode without body diode.
4. a kind of translation circuit as claimed in claim 1, it is characterized in that, the 3rd described gate-controlled switch device is IGBT units
Or MOS cell, when the 3rd gate-controlled switch device is IGBT units, described IGBT units include IGBT and manage and managed with IGBT anti-
The diode being connected in parallel；When the 3rd gate-controlled switch device is MOS cell, described MOS cell can be with body diode
Metal-oxide-semiconductor or including the metal-oxide-semiconductor and anti-paralleled diode without body diode.
5. a kind of translation circuit as claimed in claim 1, it is characterized in that, the 4th described gate-controlled switch device is IGBT units
Or MOS cell, when the 4th gate-controlled switch device is IGBT units, described IGBT units include IGBT and manage and managed with IGBT anti-
The diode being connected in parallel；When the 4th gate-controlled switch device is MOS cell, described MOS cell can be with body diode
Metal-oxide-semiconductor or including the metal-oxide-semiconductor and anti-paralleled diode without body diode.
6. a kind of three-phase translation circuit, it is characterized in that, including the first translation circuit, the second translation circuit, the 3rd translation circuit；
Described the first translation circuit, the second translation circuit and the 3rd translation circuit is used such as any one of claim 1 to 5
A kind of described translation circuit；
The center line of the center line of first translation circuit, the center line of the second translation circuit and the 3rd translation circuit is connected with each other.
7. a kind of converting means, it is characterized in that, including a kind of translation circuit as any one of claim 1 to 5, it is used for
Unsteady flow is realized, electric energy is flowed to AC from DC side or electric energy is flowed to DC side from AC.
8. a kind of converting means as claimed in claim 7, it is characterized in that, the first diode, the two or two pole in translation circuit
Pipe and the first electric capacity and the first gate-controlled switch device integration be arranged to the first circuit module or with the second gate-controlled switch device integration
It is arranged to second circuit module；
When the first diode, the second diode and the first electric capacity and the first gate-controlled switch device integration are arranged to the first circuit module
When, the first end of the first described circuit module is connected to the negative electrode of the first diode, for connecting positive bus-bar；The first described electricity
Second end of road module is connected to the anode of the second diode, for connecting the second gate-controlled switch device；The first described circuit mould
3rd end of block is connected to one end of the first electric capacity, for connecting the connection of the second gate-controlled switch device and the 3rd gate-controlled switch device
Point；
When the first diode, the second diode and the first electric capacity and the second gate-controlled switch device integration are arranged to second circuit module
When, the 4th end of described second circuit module is connected to the negative electrode of the first diode, for connecting positive bus-bar；The second described electricity
5th end of road module is connected to the anode of the second diode, for connecting the first gate-controlled switch device；Described second circuit mould
6th end of block is connected to one end of the first electric capacity, for connecting the 3rd gate-controlled switch device.
9. a kind of converting means as claimed in claim 7, it is characterized in that, the 3rd diode in translation circuit, the four or two pole
Pipe and the second electric capacity and the 3rd gate-controlled switch device integration be arranged to tertiary circuit module or with the 4th gate-controlled switch device integration
It is arranged to the 4th circuit module；
When the 3rd diode, the 4th diode and the second electric capacity and the 3rd gate-controlled switch device integration are arranged to tertiary circuit module
When, the 7th end of described tertiary circuit module is connected to one end of the second electric capacity, for connecting the second gate-controlled switch device；It is described
The 8th end of tertiary circuit module be connected to the negative electrode of the 3rd diode, for connecting the 4th gate-controlled switch device；Described
9th end of three-circuit module is connected to the anode of the 4th diode, for connecting negative busbar；
When the 3rd diode, the 4th diode and the second electric capacity and the 4th gate-controlled switch device integration are arranged to the 4th circuit module
When, the tenth end of the 4th described circuit module is connected to one end of the second electric capacity, for connecting the second gate-controlled switch device and the
The tie point of three gate-controlled switch devices；11st end of the 4th described circuit module is connected to the negative electrode of the 3rd diode, is used for
Connect the 3rd gate-controlled switch device；12nd end of the 4th described circuit module is connected to the anode of the 4th diode, for even
Connect negative busbar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720562629.4U CN206992983U (en) | 2017-05-19 | 2017-05-19 | A kind of translation circuit and corresponding three-phase translation circuit and converting means |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720562629.4U CN206992983U (en) | 2017-05-19 | 2017-05-19 | A kind of translation circuit and corresponding three-phase translation circuit and converting means |
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| Publication Number | Publication Date |
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| CN206992983U true CN206992983U (en) | 2018-02-09 |
Family
ID=61389694
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|---|---|---|---|
| CN201720562629.4U Withdrawn - After Issue CN206992983U (en) | 2017-05-19 | 2017-05-19 | A kind of translation circuit and corresponding three-phase translation circuit and converting means |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108964506A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of translation circuit and corresponding three-phase translation circuit and converting means |
| CN109361323A (en) * | 2018-11-14 | 2019-02-19 | 厦门科华恒盛股份有限公司 | I type three-level soft switch circuit and corresponding three-phase translation circuit and converter plant |
-
2017
- 2017-05-19 CN CN201720562629.4U patent/CN206992983U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108964506A (en) * | 2017-05-19 | 2018-12-07 | 厦门科华恒盛股份有限公司 | A kind of translation circuit and corresponding three-phase translation circuit and converting means |
| CN108964506B (en) * | 2017-05-19 | 2024-03-15 | 科华恒盛股份有限公司 | Conversion circuit and corresponding three-phase conversion circuit and conversion device |
| CN109361323A (en) * | 2018-11-14 | 2019-02-19 | 厦门科华恒盛股份有限公司 | I type three-level soft switch circuit and corresponding three-phase translation circuit and converter plant |
| CN109361323B (en) * | 2018-11-14 | 2020-05-15 | 科华恒盛股份有限公司 | I-type three-level soft switching circuit and corresponding three-phase conversion circuit and converter |
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