CN105162105A - DC power supply power flow controller topology - Google Patents

DC power supply power flow controller topology Download PDF

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CN105162105A
CN105162105A CN201510608338.XA CN201510608338A CN105162105A CN 105162105 A CN105162105 A CN 105162105A CN 201510608338 A CN201510608338 A CN 201510608338A CN 105162105 A CN105162105 A CN 105162105A
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full
leading
out terminal
semiconductor device
type semiconductor
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CN105162105B (en
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朱晋
何荣凯
尹靖元
韦统振
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Institute of Electrical Engineering of CAS
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Institute of Electrical Engineering of CAS
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Abstract

The invention discloses a DC power supply power flow controller topology, which is composed of a first guide switch module (11), a second guide switch module (12) and a full-bridge sub module (13), wherein the first leading-out terminal of the first guide switch module (11) is connected with the first leading-out terminal of the second guide switch module (12) to serve as a first leading-out terminal (1) of the DC power supply power flow controller; the second leading-out terminal of the first guide switch module (11) is connected with the first leading-out terminal (4) of the full-bridge sub module (13), and the connection point serves as a second leading-out terminal (2) of the DC power supply power flow controller; and the second leading-out terminal of the second guide switch module (12) is connected with the second leading-out terminal (5) of the full-bridge sub module (13) to serve as a third leading-out terminal (3) of the DC power supply power flow controller.

Description

A kind of direct current network flow controller topology
Technical field
The present invention relates to a kind of direct current network flow controller topology.
Background technology
Along with the shortage of traditional energy and the continuous aggravation of ecological deterioration problem, countries in the world have realized that the utilization and exploitation of the energy must from traditional energy to clean energy resource transition such as green regenerative energy sources.In recent years, the new energy technology such as wind energy, solar energy is developed rapidly, but because it has the feature such as intermittence, unsteadiness, make to receive the conventional art of ultra-large new forms of energy to be subject to increasing restriction, new technology, equipment and electric network composition must be adopted to meet the profound change of future source of energy general layout.And be one of effective technology means addressed this problem based on the multi-terminal direct current transmission system of customary DC and flexible direct current and direct current network technology.
Direct current network has 3 kinds of Basic Topologicals, is respectively dendroid, ring-type and netted, and multiple basic structure is combined as complicated direct current network.Containing in ring, cancellated direct current network, containing mesh and redundancy, which greatly enhances flexibility and the reliability of system, but many transmission lines may be there are between current conversion station, the number of transmission line is made to be greater than current conversion station number, cause the trend on circuit can not only rely on the voltage of current conversion station, Current Control to realize effectively regulating, namely DC power flow control freedom degree is inadequate, and this is that the power flowcontrol of whole network proposes challenge.Therefore, need to introduce extra direct current network power flow control devices, i.e. DC power flow controller, increase the Systematical control degree of freedom, improve system to effective control ability of trend.
In recent years, some researchers are with regard to DC power flow control problem both at home and abroad, propose relevant power flow control devices, and its basic thought is the parameter utilizing semiconductor device to change branch of a network, thus the constraints of influential system trend, reach the object of control system trend distribution.According to its basic functional principle, resistive and the large class of voltage-type two can be divided into.By the switching of switch, change the equivalent resistance sealing in branch road, and then reach the effect regulating branch current.Resistance is meritorious consumption-type device, and the excess power sealing in resistance consumption is general comparatively large, very uneconomical, does not generally consider in practical engineering application.
There is document (MuQ, LiangJ, LiYL, etal.PowerflowcontroldevicesinDCgrids [C] // 2012IEEEPowerandEnergySocietyGeneralMeeting.SanDiego, CA:IEEE, 2012:1-7.VeilleuxE, OoiBT.MultiterminalHVDCwiththyristorpower-flowcontroller [J] .IEEETransactionsonPowerDelivery, 2012,27 (3): 1205-1212.) propose 2 kinds of auxiliary voltage source topological structures, get energy by converter transformer from AC system.In such structure, converter transformer valve-side needs the high voltage bias bearing direct current system level, brings larger difficulty, too increase equipment cost simultaneously to the insulating Design of transformer.On the other hand, the introducing of more power electronic device causes system cloud gray model loss to increase, uneconomical.There is document (MukherjeeS, JonssonTU, SubramanianS, etal.Apparatusforcontrollingtheelectricpowertransmission inaHVDCtransmissionsystem [P] .US20130170255A1,2013.JuhlinLE.PowerflowcontrolinameshedHVDCpowertransmis sionnetwork [P] .US20120033462Al, 2011.) propose a kind of DC/DC converter, both operation mechanisms are similar.Circuit structure mainly comprises gets energy part and change of current part, get and can get energy by circuit from direct current system, utilize modulation control output AC voltage waveform, after transformer transformation, pulse thyristor bridge output dc voltage for regulating Branch Power Flow through three-phase six again, and this topological structure needs the introducing of more power electronic device to cause system cloud gray model loss to increase equally.And direct current is got can need multiple IGBT tandem working in system, and technical difficulty is larger.
Summary of the invention
The present invention proposes a kind of new direct current network flow controller topology, can make whole current conversion station while possessing DC power flow control ability, reduce costs and running wastage.
Described direct current network flow controller topology is by the first director switch module, and the second director switch module and full-bridge submodule form.First leading-out terminal of the first director switch module is connected with the first leading-out terminal of the second director switch module, as the first leading-out terminal of described direct current network flow controller, second leading-out terminal of the first director switch module is connected with the first leading-out terminal of full-bridge submodule, tie point is as the second leading-out terminal of described direct current network flow controller, second leading-out terminal of the second director switch module is connected with the second leading-out terminal of full-bridge submodule, as three terminal of described direct current network flow controller.
The first described director switch module is made up of the first full-control type semiconductor device, the second full-control type semiconductor device and respective anti-paralleled diode thereof.The emitter of the first full-control type semiconductor device is connected with the emitter of the first full-control type semiconductor device, the collector electrode of the first full-control type semiconductor device is as the first leading-out terminal of the first director switch module, and the collector electrode of the second full-control type semiconductor device is as the second leading-out terminal of the first director switch module.
The second described director switch module is made up of the 3rd full-control type semiconductor device, the 4th full-control type semiconductor device and respective anti-paralleled diode thereof.The emitter of the 3rd full-control type semiconductor device is connected with the emitter of the 4th full-control type semiconductor device, the collector electrode of the 3rd full-control type semiconductor device is as the first leading-out terminal of the second director switch module, and the collector electrode of the 4th full-control type semiconductor device is as the second leading-out terminal of the second director switch module.
Described full-bridge submodule by electric capacity, and four full-control type semiconductor device and anti-paralleled diode composition.The emitter of the 5th full-control type semiconductor device is connected with the emitter of the 7th full-control type semiconductor device and is connected with the negative pole of electric capacity, and the collector electrode of the 6th full-control type semiconductor device is connected with the collector electrode of the 8th full-control type semiconductor device and is connected with the positive pole of electric capacity; The collector electrode of the 5th full-control type semiconductor device is connected with the emitter of the 6th full-control type semiconductor device, tie point is as the first leading-out terminal of full-bridge submodule, the collector electrode of the 7th full-control type semiconductor device is connected with the emitter of the 8th full-control type semiconductor device, and tie point is as the second leading-out terminal of full-bridge submodule.
Described full-bridge submodule can be replaced by multiple full-bridge sub module cascade.
Described director switch also has another kind of composition form: be made up of four diodes and a wholly-controled device, the negative electrode of the first diode is connected with the negative electrode of the second diode, and is connected with the collector electrode of wholly-controled device; The anode of the 3rd diode is connected with the anode of the 4th diode, and is connected with the emitter of wholly-controled device; The anode of the first diode is connected with the negative electrode of the 3rd diode, as the first leading-out terminal of director switch; The anode of the second diode is connected the second leading-out terminal as director switch with the negative electrode of the 4th diode.
Three leading-out terminals of flow controller connect three-line respectively.When flowing into electric current one timing of flow controller first leading-out terminal, by the control of the full-control type semiconductor device to director switch and four full-bridge submodules, at flow controller first leading-out terminal and the direct forward of the second leading-out terminal or oppositely can access electric capacity, or access electric capacity forward or backwards between flow controller first leading-out terminal and three terminal.By the discharge and recharge to electric capacity, by the Power Exchange on the power on flow controller second leading-out terminal connection line and flow controller three terminal sub-connection circuit, thus control circuit trend.
Advantage of the present invention:
A. used semiconductor device quantity is few, and withstand voltage demand is low;
B. whole device passive device demand is few, and volume is little, lightweight;
C. adopt mature full-bridge modularization technique, be easy to Project Realization.
Accompanying drawing explanation
Fig. 1 is electrical block diagram of the present invention;
Fig. 2 is the circuit theory diagrams of embodiments of the invention 1;
Fig. 3 is the another kind of implementation of described director switch;
Fig. 4 is the another kind of implementation that described full-bridge submodule is replaced by multiple full-bridge sub module cascade structure.
Embodiment
Below in conjunction with the drawings and the specific embodiments, the invention will be further described.
As shown in Figure 1, described direct current network flow controller topology is made up of the first director switch module 11, second director switch module 12 and full-bridge submodule 13.First leading-out terminal of the first director switch module 11 is connected with the first leading-out terminal of the second director switch module 12, as the first leading-out terminal 1 of described direct current network flow controller, second leading-out terminal of the first director switch module 11 is connected with the first leading-out terminal 4 of full-bridge submodule 13, tie point is as the second leading-out terminal 2 of described direct current network flow controller, second leading-out terminal of the second director switch module 12 is connected with the second leading-out terminal 5 of full-bridge submodule 13, as three terminal 3 of described direct current network flow controller;
The first described director switch module 11 is made up of the first full-control type semiconductor device T1 and anti-paralleled diode D1 thereof, the second full-control type semiconductor device T2 and anti-paralleled diode D2 thereof.The emitter of the first full-control type semiconductor device T1 is connected with the emitter of the first full-control type semiconductor device T2, the collector electrode of the first full-control type semiconductor device T1 is as the first leading-out terminal of the first director switch module, and the collector electrode of the second full-control type semiconductor device T2 is as the second leading-out terminal of the first director switch module 11.
The second described director switch module 12 is made up of the first full-control type semiconductor device T3 and anti-paralleled diode D3 thereof, the second full-control type semiconductor device T4 and anti-paralleled diode D4 thereof.The emitter of the 3rd full-control type semiconductor device T3 is connected with the emitter of the 4th full-control type semiconductor device T4, the collector electrode of the 3rd full-control type semiconductor device T3 is as the first leading-out terminal of the second director switch module 12, and the collector electrode of the 4th full-control type semiconductor device T4 is as the second leading-out terminal of the second director switch module 12.
Described full-bridge submodule is made up of electric capacity C1 and four full-control type semiconductor device T5, T6, T7, T8 and anti-paralleled diode D5, D6, D7, D8, the emitter of the 5th full-control type semiconductor device T5 is connected with the emitter of the 7th full-control type semiconductor device T7 and is connected with the negative pole of electric capacity C1, the collector electrode of the 6th full-control type semiconductor device T6 is connected with the collector electrode of the 8th full-control type semiconductor device T8 and is connected with the positive pole of electric capacity C1, the collector electrode of the 5th full-control type semiconductor device T5 is connected with the emitter of the 6th full-control type semiconductor device T6, tie point is as the first leading-out terminal 4 of full-bridge submodule 13, the collector electrode of the 7th full-control type semiconductor device is connected with the emitter of the 8th full-control type semiconductor device, tie point is as the second leading-out terminal 5 of full-bridge submodule 13,
When electric capacity C1 forward is linked into flow controller first leading-out terminal 1 with flow controller the second leading-out terminal 2 by needs, first director switch module 11 turns off, second director switch module 12 is open-minded, 5th full-control type semiconductor device T5 and the 8th full-control type semiconductor device T8 is open-minded, and the 6th full-control type semiconductor device T6 and the 7th full-control type semiconductor device T7 turns off.
When electric capacity C1 negative sense is linked between flow controller first leading-out terminal 1 and flow controller second leading-out terminal 2 by needs, first director switch module 11 turns off, second director switch module 12 is open-minded, 5th full-control type semiconductor device T5 and the 8th full-control type semiconductor device T8 turns off, and the 6th full-control type semiconductor device T6 and the 7th full-control type semiconductor device T7 is open-minded.
When electric capacity C1 forward is linked between flow controller first leading-out terminal 1 and flow controller three terminal 3 by needs, first director switch module 11 is open-minded, second director switch module 12 turns off, 5th full-control type semiconductor device T5 and the 8th full-control type semiconductor device T8 turns off, and the 6th full-control type semiconductor device T6 and the 7th full-control type semiconductor device T7 is open-minded.
When electric capacity C1 forward is linked between flow controller first leading-out terminal 1 and flow controller three terminal 3 by needs, first director switch module 11 is open-minded, second director switch module 12 turns off, 5th full-control type semiconductor device T5 and the 8th full-control type semiconductor device T8 is open-minded, and the 6th full-control type semiconductor device T6 and the 7th full-control type semiconductor device T7 turns off.
By the switching between above-mentioned state, namely by the access forward or backwards of electric capacity C1, the electric current between each leading-out terminal of flow controller is regulated, thus control direct current network trend.
Embodiment 1
Figure 2 shows that described direct current network flow controller is linked into the embodiment of three end looped network of DC powers, wherein the first leading-out terminal 1 of flow controller is connected with the first current conversion station 21, second leading-out terminal 2 of flow controller is connected with the second current conversion station 22 by DC power transmission line, and three terminal 3 of flow controller is connected with the 3rd current conversion station 23 by DC power transmission line.
Embodiment 2
Figure 3 shows that the another kind of implementation of director switch module.As shown in Figure 3, director switch module is made up of four diodes, 24,25,26,27 and wholly-controled device 28.The negative electrode of the first diode 24 is connected with the negative electrode of the second diode 26, and is connected with the collector electrode of wholly-controled device 28; The anode of the 3rd diode 25 is connected with the anode of the 4th diode 27, and is connected with the emitter of wholly-controled device 28; The anode of the first diode 24 is connected with the negative electrode of the 3rd diode 25, as the first leading-out terminal of director switch; The anode of the second diode 26 is connected the second leading-out terminal as director switch with the negative electrode of the 4th diode 27.
Embodiment 3
Figure 4 shows that the another kind of implementation of described flow controller.As shown in Figure 4, full-bridge submodule is replaced by full-bridge sub module cascade structure 33.Described full-bridge sub module cascade structure 33 is made up of the first full-bridge submodule 31 and the second full-bridge submodule 32 cascade.First leading-out terminal 34 of the second full-bridge submodule 32 is connected with the second leading-out terminal 45 of the first full-bridge submodule 31, second leading-out terminal of the first director switch module 11 is connected with the first leading-out terminal 44 of the first full-bridge submodule 31, tie point is as the second leading-out terminal 2 of described direct current network flow controller, second leading-out terminal of the second director switch module 12 is connected with the second leading-out terminal 35 of the second full-bridge submodule 32, and tie point is as three terminal 3 of described direct current network flow controller.First switch S 1 by the first leading-out terminal 44 of the first full-bridge submodule 31 and the second leading-out terminal 45 of the first full-bridge submodule 31 in parallel with the first full-bridge submodule, the second leading-out terminal 35 that second switch S2 passes through the first leading-out terminal leading-out terminal 34 of the second full-bridge submodule 32 and the second full-bridge submodule 32 is in parallel with the first full-bridge submodule.Conducting and the bypass of the first full-bridge submodule 31 and the second full-bridge submodule 32 is controlled respectively by the first switch S 1, second switch S2.

Claims (6)

1. a direct current network flow controller topology, it is characterized in that: described direct current network flow controller topology is by the first director switch module (11), and the second director switch module (12) and full-bridge submodule (13) form; First leading-out terminal of the first director switch module (11) is connected with the first leading-out terminal of the second director switch module (12), as first leading-out terminal (1) of described direct current network flow controller; Second leading-out terminal of the first director switch module (11) is connected with first leading-out terminal (4) of full-bridge submodule (13), and tie point is as second leading-out terminal (2) of described direct current network flow controller; Second leading-out terminal of the second director switch module (12) is connected with second leading-out terminal (5) of full-bridge submodule (13), as three terminal (3) of described direct current network flow controller.
2., according to direct current network flow controller topology according to claim 1, it is characterized in that: the first described director switch module (11) is made up of the first full-control type semiconductor device (T1) and anti-paralleled diode (D1), the second full-control type semiconductor device (T2) and anti-paralleled diode (D2) thereof; The emitter of the first full-control type semiconductor device (T1) is connected with the emitter of the first full-control type semiconductor device (T2), the collector electrode of the first full-control type semiconductor device (T1) is as the first leading-out terminal of the first director switch module, and the collector electrode of the second full-control type semiconductor device (T2) is as the second leading-out terminal of the first director switch module (11).
3., according to direct current network flow controller topology according to claim 1, it is characterized in that: the second described director switch module (12) is made up of the first full-control type semiconductor device (T3) and anti-paralleled diode (D3), the second full-control type semiconductor device (T4) and anti-paralleled diode (D4) thereof; The emitter of the 3rd full-control type semiconductor device (T3) is connected with the emitter of the 4th full-control type semiconductor device (T4), the collector electrode of the 3rd full-control type semiconductor device (T3) is as the first leading-out terminal of the second director switch module (12), and the collector electrode of the 4th full-control type semiconductor device (T4) is as the second leading-out terminal of the second director switch module (12).
4. according to direct current network flow controller according to claim 1 topology, it is characterized in that: described full-bridge submodule is made up of electric capacity (C1) and four full-control type semiconductor device (T5, T6, T7, T8) and anti-paralleled diode (D5, D6, D7, D8) thereof; The emitter of the 5th full-control type semiconductor device (T5) is connected with the emitter of the 7th full-control type semiconductor device (T7), and is connected with the negative pole of electric capacity (C1); The collector electrode of the 6th full-control type semiconductor device (T6) is connected with the collector electrode of the 8th full-control type semiconductor device (T8), and is connected with the positive pole of electric capacity (C1); The collector electrode of the 5th full-control type semiconductor device (T5) is connected with the emitter of the 6th full-control type semiconductor device (T6), tie point is as first leading-out terminal (4) of full-bridge submodule (13), the collector electrode of the 7th full-control type semiconductor device is connected with the emitter of the 8th full-control type semiconductor device, and tie point is as second leading-out terminal (5) of full-bridge submodule (13).
5., according to direct current network flow controller topology according to claim 1, it is characterized in that: described full-bridge submodule is replaced by multiple full-bridge sub module cascade structure (33); Described full-bridge sub module cascade structure (33) is made up of the first full-bridge submodule (31) and the second full-bridge submodule (32) cascade; First leading-out terminal (34) of the second full-bridge submodule (32) is connected with second leading-out terminal (45) of the first full-bridge submodule (31), second leading-out terminal of the first director switch module (11) is connected with first leading-out terminal (44) of the first full-bridge submodule (31), and tie point is as second leading-out terminal (2) of described direct current network flow controller; Second leading-out terminal of the second director switch module (12) is connected with second leading-out terminal (35) of the second full-bridge submodule (32), and tie point is as three terminal (3) of described direct current network flow controller; First switch (S1) by first leading-out terminal (44) of the first full-bridge submodule (31) and second leading-out terminal (45) of the first full-bridge submodule (31) in parallel with the first full-bridge submodule, second switch (S2) draw leading-out terminal (34) by first of the second full-bridge submodule (32) and second leading-out terminal (35) of the second full-bridge submodule (32) in parallel with the first full-bridge submodule; Conducting and the bypass of the first full-bridge submodule (31) and the second full-bridge submodule (32) is controlled respectively by the first switch (S1) and second switch (S2).
6., according to direct current network flow controller topology according to claim 1, it is characterized in that: described director switch module is made up of four diodes (24,25,26,27) and a wholly-controled device (28); , the negative electrode of the first diode (24) is connected with the negative electrode of the second diode (26) and is connected with the collector electrode of wholly-controled device (28); 3rd diode (25) is connected with the anode of the 4th diode (27) and is connected with the emitter of wholly-controled device (28); The anode of the first diode (24) is connected with the negative electrode of the 3rd diode (26), as the first leading-out terminal of director switch; The anode of the second diode (25) is connected with the negative electrode of the 4th diode (27), as the second leading-out terminal of director switch.
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