CN208271887U - A kind of high-power super-high pressure pulse half-wave rectifier bridge - Google Patents
A kind of high-power super-high pressure pulse half-wave rectifier bridge Download PDFInfo
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- CN208271887U CN208271887U CN201820795354.3U CN201820795354U CN208271887U CN 208271887 U CN208271887 U CN 208271887U CN 201820795354 U CN201820795354 U CN 201820795354U CN 208271887 U CN208271887 U CN 208271887U
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- backlight unit
- interconnecting piece
- pressure pulse
- diode chip
- high pressure
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Abstract
The utility model discloses a kind of high-power super-high pressure pulse half-wave rectifier bridges, belong to power semiconductor, the technical problems to be solved in the utility model is that more discrete diode products are combined into half-wave bridge, rectification efficiency, power density, the miniaturization of product is restricted, the technical solution of use are as follows: its structure includes including four diode chip for backlight unit, four diode chip for backlight unit are divided into two dual chip series connection groups, two dual chip series connection group common cathodes export to form half-bridge structure, and two leads are drawn at common cathode, the anode of two dual chip series connection groups draws a lead respectively.
Description
Technical field
The utility model relates to power semiconductor, specifically a kind of high-power super-high pressure pulse halfwave rectifier
Bridge.
Background technique
In recent years since the terminal applies such as industrial automatic control, household appliances, charging equipment constantly pursue more high-energy source
Efficiency, the steady expansion of power device downstream product range, especially CHINESE REGION is all protected in the world in power device market
Hold steady-state growth, the forward and reverse voltage that single power electronic devices can be born be it is certain, the size of current that can pass through is also one
Fixed.Therefore, the power electronic equipment capacity being made of single power electronic devices is restricted, and is generallyd use in practical more
Component is formed with several power electronic devices serial or parallel connections, to increase the capacity of power electronic equipment.
Based on diode in the application of high-power super-high pressure pulse circuit, more discrete diode products are combined into half-wave
The miniaturization of bridge, rectification efficiency, power density, product is restricted.
Summary of the invention
The technical assignment of the utility model is to provide a kind of high-power super-high pressure pulse half-wave rectifier bridge, to solve more points
The problem of vertical diode product is combined into half-wave bridge, and the miniaturization of rectification efficiency, power density, product is restricted.
The technical assignment of the utility model realizes in the following manner, a kind of high-power super-high pressure pulse halfwave rectifier
Bridge, including four diode chip for backlight unit, four diode chip for backlight unit are divided into two dual chip series connection groups, two dual chip series connection group common cathodes
Pole exports to form half-bridge structure, and two leads are drawn at common cathode, and the anode of two dual chip series connection groups draws one respectively
Bar lead.
Preferably, further including plastic-sealed body and metal framework, pad is provided on metal framework, there are four pad settings,
Diode chip for backlight unit is arranged on pad, and diode chip for backlight unit one side (anode surface) is fixedly welded on the pad of metal framework, another
Face (cathode plane) is welded on metal framework by film dancing, wherein metal framework uses oxygen-free copper frame.
Preferably, the middle position of the plastic-sealed body is provided with strip hole, two dual chip series connection groups are separately positioned on
The two sides of strip hole and centered on strip hole be symmetrical arranged.
More preferably, described lead one end connects film dancing, and the other end extends plastic-sealed body.
More preferably, the diode chip for backlight unit on metal framework uniformly respectively and adjacent two diode chip for backlight unit between spacing
For 8mm-10mm.
More preferably, the diode chip for backlight unit is having a size of for 100mil ~ 220mil.
More preferably, the diode chip for backlight unit is all made of with metal framework, diode chip for backlight unit and film dancing and film dancing and lead
Slicker solder silver high-temperature solder is welded to connect.
More preferably, the diode chip for backlight unit uses high-voltage switch gear diode chip for backlight unit.
More preferably, the film dancing includes round interconnecting piece, transition connection portion and rectangular interconnecting piece, and round interconnecting piece is in circle
Shape, transition connection portion is arranged between round interconnecting piece and rectangular interconnecting piece and the width of transition connection portion is less than rectangular interconnecting piece
Width；Round interconnecting piece is used to connect round interconnecting piece and rectangular interconnecting piece for connecting diode chip for backlight unit, transition connection portion,
Rectangular interconnecting piece is used for connecting lead wire.
More preferably, the junction of the transition connection portion and rectangular interconnecting piece passes through arc transition.
The high-power super-high pressure pulse half-wave rectifier bridge of the utility model has the advantage that compared with prior art
(1), it is laid out uniformly between plastic-sealed body internal high pressure switching diode chip, spacing is big, in high-voltage pulse work
High pressure can be avoided to hit discharge breakdown phenomenon completely；
(2), larger size chip can be placed inside plastic-sealed body, realize that electric current, power maximize；
(3) high-voltage switch gear diode chip for backlight unit is high-speed chip, realizes the working efficiency under the conditions of pulsed operation；
(4), the utility model uses symmetrical half bridge designs, the design application of great convenience；In plastic-sealed body and bottom plate
Centre offers strip hole, facilitates installation and finned；
(5), the direct insertion rectifier bridge of the all-wave of the utility model shape compatible conventional, good heat dissipation, use easy for installation can
It leans on；Frame structure is used simultaneously, can facilitate realization automated production in technique；
(6), encapsulation the utility model uses the direct insertion rectifier bridge shape of four leads, and half-bridge circuit is designed using common cathode,
The frame structure of four leads is mutually compatible with existing installation specification；Oxygen-free copper ram frame structure is used simultaneously, ensure that product
Low thermal resistance and power density and reliability；
(7), the utility model uses four high-voltage switch gear diode chip for backlight unit, integrated to be welded on oxygen-free copper frame, forms
Two poles of the diode of planar epitaxial structure, SIPOS process structure and GPP process structure can be used in half-bridge circuit, single chip
Pipe etc.；General-purpose diode and the switching diode of 25ns-500ns can be used according to application in switch time；Maximum breakdown voltage
Single is greater than 1000V；Maximum current 20A；
(8), the utility model is integrated with four high-voltage switch gear diode chip for backlight unit encapsulation and uses the direct insertion common cathode of four leads
Pole design, electrical parameter can provide the continuous impulse operating current of maximum 20A, can reversely bear the breakdown voltage of 2000V, and can
Adapt to high-frequency impulse operating mode (preferably switch time is less than 35ns)；In addition, design anti-insulating capacity reach 100 megohms with
Above, it can be achieved that anti-high-voltage pulse 2000V or more.
Detailed description of the invention
The present invention will be further described with reference to the accompanying drawing.
Attached drawing 1 is the structural schematic diagram of high-power super-high pressure pulse half-wave rectifier bridge；
Attached drawing 2 is the schematic diagram of attached drawing 1；
Attached drawing 3 is the structural schematic diagram of film dancing in attached drawing 1；
Attached drawing 4 be attached drawing 3 in A to structural schematic diagram.
In figure, 1, metal framework, 2, lead, 3, diode chip for backlight unit, 4, plastic-sealed body, 5, film dancing, 6, strip hole, 7, round company
Socket part, 8, transition connection portion, 9, rectangular interconnecting piece, 10, circular arc, 11, pad.
Specific embodiment
Referring to Figure of description and specific embodiment to a kind of high-power super-high pressure pulse halfwave rectifier of the utility model
Bridge is described in detail below.
Embodiment:
As shown in Fig. 2, the high-power super-high pressure pulse half-wave rectifier bridge of the utility model, structure mainly include modeling
Seal body 4, metal framework 1 and four diode chip for backlight unit 3.Four diode chip for backlight unit 3 are divided into two dual chip series connection groups, two twin-cores
Piece series connection group common cathode exports to form half-bridge structure, and draws two leads 2, and the anode of two dual chip series connection groups draws respectively
A lead 2 out.2 one end of lead connects film dancing 5, and the other end extends plastic-sealed body 4.The utility model uses dual chip series connection group
Realize that superelevation is reversely pressed, breakdown voltage can reach 2500V；Plastic-sealed body 4 represents encapsulation GBU/GBJ at half-wave bridge structure；Using
In the rectification of high voltage pulse transformer.
As shown in Fig. 1, installation settings has pad 11 on metal framework 1, and there are four pad 11 is set, diode chip for backlight unit 3 is welded
It connects on pad 11,3 one side (anode surface) of diode chip for backlight unit is fixedly welded on the pad 11 of metal framework 1, another side (cathode
Face) it is welded on metal framework 1 by film dancing 5, wherein metal framework uses oxygen-free copper frame.Wherein, metal framework 1 uses
Oxygen-free copper frame ensure that the low thermal resistance and power density and reliability of product.The middle position of plastic-sealed body 4 offers strip
Hole 6, two dual chip series connection groups are separately mounted to the two sides of strip hole 6 and are symmetrical arranged centered on strip hole 6.Diode core
Uniformly the spacing respectively and between adjacent two diode chip for backlight unit 3 is 8mm to piece 3 on metal framework 1.Diode chip for backlight unit 3 having a size of
100mil, other electrical parameters of diode chip for backlight unit 3: breakdown voltage: 600V-1000V；Maximum current: 20A；Switch time: most
Small 35ns.Diode chip for backlight unit 3 and metal framework 1, diode chip for backlight unit 3 and film dancing 5 and film dancing 5 and lead 2 are all made of slicker solder silver
High-temperature solder is welded to connect.Diode chip for backlight unit 3 uses high-voltage switch gear diode chip for backlight unit.
As shown in figures 3 and 4, film dancing 5 includes round interconnecting piece 7, transition connection portion 8 and rectangular interconnecting piece 9, circle connection
Portion 7 is rounded, and transition connection portion 8 is mounted between round interconnecting piece 7 and rectangular interconnecting piece 9 and the width of transition connection portion 8 is small
In the width of rectangular interconnecting piece 9；Round interconnecting piece 7 is for connecting diode chip for backlight unit 3, and transition connection portion 8 is for connecting round connect
Socket part 7 and rectangular interconnecting piece 9, rectangular interconnecting piece 9 are used for connecting lead wire 2.The junction of transition connection portion 8 and rectangular interconnecting piece 9
Pass through 10 transition of circular arc.
The technical personnel in the technical field can readily realize the utility model with the above specific embodiments,.But
It is it should be appreciated that the utility model is not limited to above-mentioned specific embodiment.On the basis of the disclosed embodiments, described
Those skilled in the art can arbitrarily combine different technical features, to realize different technical solutions.
Except for the technical features described in the specification, it all is technically known to those skilled in the art.
Claims (10)
1. a kind of high-power super-high pressure pulse half-wave rectifier bridge, which is characterized in that including four diode chip for backlight unit, four diodes
Chip is divided into two dual chip series connection groups, and two dual chip series connection group common cathodes export to form half-bridge structure, and at common cathode
Two leads are drawn, the anode of two dual chip series connection groups draws a lead respectively.
2. high-power super-high pressure pulse half-wave rectifier bridge according to claim 1, which is characterized in that further include plastic-sealed body and
Metal framework is provided with pad on metal framework, and there are four pad settings, and diode chip for backlight unit is arranged on pad, diode core
Piece is fixedly welded on one side on the pad of metal framework, and another side is welded on metal framework by film dancing.
3. high-power super-high pressure pulse half-wave rectifier bridge according to claim 2, which is characterized in that in the plastic-sealed body
Meta position, which installs, is equipped with strip hole, and two dual chip series connection groups are separately positioned on two sides of strip hole and symmetrical centered on strip hole
Setting.
4. high-power super-high pressure pulse half-wave rectifier bridge according to claim 3, which is characterized in that described lead one end connects
Film dancing is connect, the other end extends plastic-sealed body.
5. high-power super-high pressure pulse half-wave rectifier bridge according to claim 4, which is characterized in that the diode chip for backlight unit
Uniformly the spacing respectively and between adjacent two diode chip for backlight unit is 8mm-10mm on metal framework.
6. high-power super-high pressure pulse half-wave rectifier bridge according to claim 5, which is characterized in that the diode chip for backlight unit
Having a size of for 100mil ~ 220mil.
7. high-power super-high pressure pulse half-wave rectifier bridge according to claim 6, which is characterized in that the diode chip for backlight unit
Slicker solder silver high-temperature solder is all made of with metal framework, diode chip for backlight unit and film dancing and film dancing and lead to be welded to connect.
8. high-power super-high pressure pulse half-wave rectifier bridge according to claim 7, which is characterized in that the diode chip for backlight unit
Using high-voltage switch gear diode chip for backlight unit.
9. high-power super-high pressure pulse half-wave rectifier bridge according to claim 8, which is characterized in that the film dancing includes circle
Shape interconnecting piece, transition connection portion and rectangular interconnecting piece, round interconnecting piece is rounded, transition connection portion setting in round interconnecting piece and
Between rectangular interconnecting piece and the width of transition connection portion is less than the width of rectangular interconnecting piece；Round interconnecting piece is for connecting diode
Chip, transition connection portion are used for connecting lead wire for connecting round interconnecting piece and rectangular interconnecting piece, rectangular interconnecting piece.
10. high-power super-high pressure pulse half-wave rectifier bridge according to claim 9, which is characterized in that the transition connection
Portion and the junction of rectangular interconnecting piece pass through arc transition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820795354.3U CN208271887U (en) | 2018-05-25 | 2018-05-25 | A kind of high-power super-high pressure pulse half-wave rectifier bridge |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820795354.3U CN208271887U (en) | 2018-05-25 | 2018-05-25 | A kind of high-power super-high pressure pulse half-wave rectifier bridge |
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| CN208271887U true CN208271887U (en) | 2018-12-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110708780A (en) * | 2019-09-04 | 2020-01-17 | 九阳股份有限公司 | Rectifier bridge stack for electromagnetic heating control and electromagnetic heating circuit |
-
2018
- 2018-05-25 CN CN201820795354.3U patent/CN208271887U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110708780A (en) * | 2019-09-04 | 2020-01-17 | 九阳股份有限公司 | Rectifier bridge stack for electromagnetic heating control and electromagnetic heating circuit |
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