CN204858955U - Igto packaging structure - Google Patents
Igto packaging structure Download PDFInfo
- Publication number
- CN204858955U CN204858955U CN201520584521.6U CN201520584521U CN204858955U CN 204858955 U CN204858955 U CN 204858955U CN 201520584521 U CN201520584521 U CN 201520584521U CN 204858955 U CN204858955 U CN 204858955U
- Authority
- CN
- China
- Prior art keywords
- circuit board
- drive circuit
- gto device
- gto
- fixing hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 238000004806 packaging method and process Methods 0.000 title abstract 2
- 239000000758 substrate Substances 0.000 claims description 44
- 230000001681 protective effect Effects 0.000 claims description 24
- 238000009413 insulation Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000011889 copper foil Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 238000002788 crimping Methods 0.000 abstract description 5
- 239000006185 dispersion Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Landscapes
- Thyristors (AREA)
Abstract
The utility model provides a IGTO packaging structure, including GTO device, dirver circuit board, the GTO device includes insulating housing, does the positive pole of IGTO device in the middle of insulating housing's the top simultaneously for the positive pole of GTO device, be equipped with twice spaced loop configuration from top to bottom on GTO device insulating housing's the lateral surface, one last loop configuration is the gate pole ring of GTO device, and one lower loop configuration is the cathode loop of GTO device, the cathode loop of GTO device is discontinuous, and it has a breach to open at least, during the cathode loop of GTO device passed through the breach mounting hole on partly dirver circuit board of entering is gone into to the card earlier, rotatory making in the mounting hole that GTO device card goes into dirver circuit board, and the cathode loop of GTO device again and gate pole ring were located dirver circuit board's reverse side and front respectively, and GTO device gate pole ring sum cathode loop is connected with the first electric joining region in close contact with of dirver circuit board positive and negative is electric respectively. The utility model discloses the lead inductance is little, and heat dispersion is good, also makes things convenient for the crimping to use.
Description
Technical field
The utility model relates to a kind of electron device package structure, especially a kind of encapsulating structure of IGTO device.
Background technology
Turn-off thyristor GTO(GateTurn-OffThyristor) also known as gated thyristor.Triode thyristor (SCR) removes signal and also can maintain on-state after triggering by gate pole positive signal.Turning off for making it, must cut off the electricity supply, make forward current lower than maintenance electric current, or impose reverse voltage and closely turn off by force.This just needs to increase commutating circuit, not only makes the volume weight of equipment increase, and can lower efficiency, and produces wave distortion and noise.Turn-off thyristor (GTO) overcomes above-mentioned defect, and it had both remained the advantages such as the withstand voltage height of triode thyristor, electric current are large, had again self-switching-off capability, thus convenient than triode thyristor in use, is desirable high pressure, high-current switch device.High Power Gate Turn-Off Thyristor has been widely used in the fields such as chopping regulating speed, frequency control, inverter.
IGTO device is made up of jointly GTO and supporting drive circuit, principle as shown in Figure 1, GTO device with drive with MOS switching tube (S1, S2, S3 in Fig. 1) be connected; The drive circuit of GTO device is made on one piece of drive circuit board (pcb board), GTO device is a cake type device be separated, reliable electrical connection is not only needed between GTO device and drive circuit board, also require that the lead-in inductance of this electrical connection drops to minimum, the loss on drive circuit is generated heat the radiator also conducted to by this electrical connection on GTO.
When considering application in addition, IGTO is a crimp type device, and package design needs the needs taking into account IGTO crimping use.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, provides a kind of IGTO encapsulating structure, substantially reduces the lead-in wire of GTO device to drive circuit board, significantly can reduce lead-in inductance; And GTO device and driver circuit plate are connected firmly stable, good heat dissipation effect, packaged ITGO device is also convenient to crimping and is used.The technical solution adopted in the utility model is:
A kind of IGTO encapsulating structure, comprise GTO device, drive circuit board, described GTO device is stuck in the installing hole on drive circuit board, and the gate pole of GTO device and negative electrode are electrically connected with drive circuit board.
Particularly, described GTO device comprises insulation shell, and the crown center of insulation shell is the double anode making IGTO device of anode of GTO device; The lateral surface of GTO device isolation housing be provided with twice between the upper and lower every loop configuration, upper one loop configuration is the gate pole ring of GTO device, and lower one loop configuration is the cathode loop of GTO device; The cathode loop of GTO device is discontinuous, at least has place's breach; The cathode loop of GTO device first snaps in the installing hole that a part enters on drive circuit board by breach, rotating makes GTO device snap in the installing hole of drive circuit board again, and the cathode loop of GTO device and gate pole ring lay respectively at reverse side and the front of drive circuit board;
The gate pole ring and cathode loop of GTO device have the first fixing hole corresponding to position;
On drive circuit board, side has an installing hole, and the drive circuit board obverse and reverse that installing hole week makes a circle is provided with the first electrical connection district; Second fixing hole corresponding with the first fixing hole position on GTO device is had in the first electrical connection district around drive circuit board installing hole;
After GTO device snaps in the installing hole of drive circuit board, the first fixing hole on GTO device gate pole ring and cathode loop and the second fixing hole contraposition on drive circuit board are also fastening with insulating screw, make GTO device gate pole ring and cathode loop be electrically connected district's close contact with first of drive circuit board positive and negative respectively and are electrically connected.
Further, described IGTO encapsulating structure, also comprises a conductive substrates; Fix conductive substrates at drive circuit board reverse side, conductive substrates is class tray type structure, by the bottom covering protection of GTO device, and and be provided with insulation cushion between GTO bottom device; Conductive substrates is electrically connected with the contact site of drive circuit board, as the negative electrode of IGTO device.
Further, be flat region bottom conductive substrates, extend substrate connecting portion upwardly and outwardly from outer, bottom flat district, substrate connecting portion has the 3rd fixing hole; And on drive circuit board, have four fixing hole corresponding with the 3rd fixing hole position; Be provided with around drive circuit board reverse side the 4th fixing hole and be electrically connected district with second of the contact of conductive substrates.
Further, described IGTO encapsulating structure, also comprises a protective cover; Protective cover is semi-open structure, comprises protective cover and lower protective cover; The crimpless region overlay of GTO device and drive circuit board is only protected by protective cover; On lower protective cover, side is provided with perforate, for holding conductive substrates; Five fixing hole corresponding with the 3rd fixing hole position on substrate connecting portion is provided with around the perforate of lower protective cover; Use conduction screw through the 5th fixing hole, the 3rd fixing hole, the 4th fixing hole; drive circuit board, conductive substrates are fixed together with lower protective cover, and makes the substrate connecting portion of conductive substrates be electrically connected district's close contact with second of drive circuit board reverse side to be electrically connected.
More preferably, on the cathode loop of GTO device, the maximum central angle corresponding to a breach is greater than 25 degree.
Particularly, the material of GTO device gate pole ring and cathode loop is Copper Foil.
The utility model has the advantage of:
1) syndeton of GTO device and drive circuit board, the connecting lead wire of the gate pole of GTO device, negative electrode and drive circuit board can be reduced to the shortest, reduce the lead-in inductance of the MOS switching tube on GTO and drive circuit board to greatest extent, the lead-in inductance of this mode is less than 20nH; And the contact-making surface of loop configuration makes GTO device be connected contact area with drive circuit board greatly, be electrically connected reliable and stable, be also conducive to heat transfer simultaneously.
2) conductive substrates connects the negative electrode that driver circuit plate is used as IGTO device, can play good heat radiating effect simultaneously, and compared with traditional GTO, the heat that GTO device, MOS switching tube produce all is passed to radiator by conductive substrates.
Accompanying drawing explanation
Fig. 1 is IGTO device principle figure.
Fig. 2 is GTO device appearance schematic diagram of the present utility model.
Fig. 3 is GTO device cathodes schematic diagram of the present utility model.
Fig. 4 a and Fig. 4 b is respectively drive circuit board obverse and reverse schematic diagram of the present utility model.
Fig. 5 is encapsulating structure explosive view of the present utility model.
Embodiment
Below in conjunction with concrete drawings and Examples, the utility model is described in further detail.
The IGTO encapsulating structure that the utility model proposes, comprises GTO device 1, drive circuit board 2, conductive substrates 3 and protective cover 4;
As shown in Figure 2, totally become cake type, comprise insulated ceramic shell 101, the crown center of insulation shell 101 is the double anode making IGTO device of anode 102 of GTO device to GTO device 1; The lateral surface of GTO device isolation housing 101 be provided with twice between the upper and lower every loop configuration, upper one loop configuration is the gate pole ring 103 of GTO device, and lower one loop configuration is the cathode loop 104 of GTO device; Mark 103 and 104 in accompanying drawing 1 is the gate pole of GTO and negative electrode namely; And traditional GTO gate pole lead-out wire is the copper cash of one 4 square millimeters; The gate pole ring 103 of GTO device and cathode loop 104 are all Copper Foil, electroplating surfaces with tin or silver-plated;
The cathode loop 104 of GTO device is discontinuous, at least has place's breach 105; In this example, as shown in Figure 3, the cathode loop 104 of GTO device has breach everywhere, and the maximum central angle corresponding to a breach is more preferably greater than 25 degree.Because Copper Foil is flexible, therefore the cathode loop 104 of GTO device first can snap in the installing hole that a part enters on drive circuit board 2 by maximum breach, rotating makes GTO device 1 snap in the installing hole of drive circuit board 2 again, and the cathode loop 104 of GTO device and gate pole ring 103 lay respectively at reverse side and the front of drive circuit board 2;
In order to GTO device 1 and drive circuit board 2 be fixed, the gate pole ring 103 and cathode loop 104 of GTO device have the first fixing hole 106 that position is corresponding;
Drive circuit board 2 as shown in figures 4 a and 4b, drive circuit board 2 is provided with the MOS switching tube (in Fig. 4 a and Fig. 4 b do not draw S2, S3) relevant to GTO device 1, on drive circuit board 2, side has an installing hole 201, the drive circuit board obverse and reverse that installing hole makes a circle for 201 weeks all covers copper, as the first electrical connection district 202; Second fixing hole 203 corresponding with the first fixing hole 106 position on GTO device 1 is had in the first electrical connection district 202 around drive circuit board 2 installing hole 201; (notice that the first electrical connection district 202 positive and negative is disconnected, otherwise the gate pole of GTO and negative electrode being with regard to short circuit)
After GTO device 1 snaps in the installing hole 201 of drive circuit board 2, the first fixing hole 106 on GTO device gate pole ring 103 and cathode loop 104 is fastening with insulating screw 5 with the second fixing hole 203 contraposition on drive circuit board 2, as shown in Figure 5, make GTO device gate pole ring 103 and cathode loop 104 be electrically connected district 202 close contact with first of drive circuit board 2 positive and negative to be respectively electrically connected; Thus the gate pole of GTO device 1 and negative electrode can be connected other element on drive circuit board 2, the negative electrode of such as GTO device 1 is connected with MOS switching tube S2 with S3.
The above-mentioned syndeton of GTO device 1 and drive circuit board 2, the connecting lead wire of the gate pole of GTO, negative electrode and drive circuit board can be reduced to the shortest, reduce the lead-in inductance of MOS switching tube S3 and S2 on GTO and drive circuit board to greatest extent, the lead-in inductance of this mode is less than 20nH; And the contact-making surface of loop configuration makes connection contact area large, be electrically connected reliable and stable, also be conducive to heat transfer simultaneously, the partial heat that MOS switching tube on drive circuit board 2 produces is transmitted on GTO device 1 by this syndeton, realizes quick heat radiating by the electrode metal being crimped on the large-size on GTO device 1 anode 102.
Fix conductive substrates 3 at drive circuit board 2 reverse side, conductive substrates 3 is class tray type structure, by the bottom covering protection of GTO device 1, and and bottom GTO device 1 between be provided with insulation cushion 6; Conductive substrates 3 is electrically connected with the contact site of drive circuit board 2, thus can be electrically connected with the source electrode of MOS switching tube on drive circuit board 2, as the negative electrode of IGTO device (namely packaged integral device);
Particularly, conductive substrates 3 is aluminum, and bottom is flat region, extends substrate connecting portion 301 upwardly and outwardly from outer, bottom flat district, and substrate connecting portion 301 has the 3rd fixing hole 302; And on drive circuit board 2, have four fixing hole 204 corresponding with the 3rd fixing hole 302 position; Cover copper around drive circuit board reverse side the 4th fixing hole 204, be electrically connected district 205 as second of the contact with conductive substrates 3;
Protective cover 4 is semi-open structure, comprises protective cover 41 and lower protective cover 42; Protective cover 4 is only by crimpless region (left side of the IGTO overall device structure in Fig. 5) covering protection of GTO device 1 and drive circuit board 2; On lower protective cover 42, side is provided with perforate 421, for holding conductive substrates 3; Five fixing hole 422 corresponding with the 3rd fixing hole 302 position on substrate connecting portion 301 is provided with around the perforate 421 of lower protective cover 42; Use conduction screw 7(metal screws) through the 5th fixing hole 422, the 3rd fixing hole 302, the 4th fixing hole 204; drive circuit board 2, conductive substrates 3 can be fixed together with lower protective cover 42, and make the substrate connecting portion 301 of conductive substrates 3 be electrically connected district 205 close contact with second of drive circuit board reverse side to be electrically connected.
Shown in Fig. 5, whole packaged structure is referred to as IGTO device, the anode of IGTO device and negative electrode by the agency of above, and the gate pole of IGTO device does not then need crimping mode to pick out; The gate pole ring 103 of GTO device 1 is connected with drive circuit board 2, and drive circuit board 2 is provided with gate drive circuit (not shown).
The main power section of whole IGTO device adopts two-sided crimping mode to can be applicable in high-power electric and electronic energy transition equipment, compared with traditional GTO, the heat that GTO device 1, MOS switching tube S2 and S3 produce all is passed to radiator by conductive substrates 3, conductive substrates 3 in Fig. 5 is aluminum trays structure, thickness is 3 millimeters, itself has good conduction and heat conductivility.Being crimped to conductive substrates 3(IGTO negative electrode) electrode metal of bottom not only conducts electricity as electrode, plays radiator effect simultaneously, the heat that can rapid divergence GTO device 1 and drive circuit board 2 produce.
Claims (7)
1. an IGTO encapsulating structure, comprise GTO device (1), drive circuit board (2), it is characterized in that: described GTO device (1) is stuck in the installing hole on drive circuit board (2), and the gate pole of GTO device (1) and negative electrode are electrically connected with drive circuit board (2).
2. IGTO encapsulating structure as claimed in claim 1, is characterized in that:
Described GTO device (1) comprises insulation shell (101), and the crown center of insulation shell (101) is the double anode making IGTO device of anode (102) of GTO device; The lateral surface of GTO device isolation housing (101) be provided with twice between the upper and lower every loop configuration, upper one loop configuration is the gate pole ring (103) of GTO device, and lower one loop configuration is the cathode loop (104) of GTO device; The cathode loop (104) of GTO device (1) is discontinuous, at least has place's breach (105); The cathode loop (104) of GTO device (1) first snaps in the installing hole that a part enters on drive circuit board (2) by breach, rotating makes GTO device (1) snap in the installing hole of drive circuit board (2) again, and the cathode loop of GTO device (104) and gate pole ring (103) lay respectively at reverse side and the front of drive circuit board (2);
The gate pole ring (103) and cathode loop (104) of GTO device have the first fixing hole (106) corresponding to position;
Have an installing hole (201) in the upper side of drive circuit board (2), the drive circuit board obverse and reverse that installing hole (201) week makes a circle is provided with the first electrical connection district (202); Second fixing hole (203) corresponding with GTO device (1) upper first fixing hole (106) position is had in the first electrical connection district (202) around drive circuit board (2) installing hole (201);
After GTO device (1) snaps in the installing hole (201) of drive circuit board (2), the first fixing hole (106) on GTO device gate pole ring (103) and cathode loop (104) is with insulating screw (5) fastening with the second fixing hole (203) contraposition on drive circuit board (2), makes GTO device gate pole ring (103) and cathode loop (104) be electrically connected district's close contact with first of drive circuit board (2) positive and negative respectively and is electrically connected.
3. IGTO encapsulating structure as claimed in claim 2, is characterized in that: also comprise a conductive substrates (3);
Conductive substrates (3) is fixed at drive circuit board (2) reverse side, conductive substrates (3) is class tray type structure, by the bottom covering protection of GTO device (1), and and be provided with insulation cushion (6) between GTO device (1) bottom; Conductive substrates (3) is electrically connected with the contact site of drive circuit board (2), as the negative electrode of IGTO device.
4. IGTO encapsulating structure as claimed in claim 3, is characterized in that:
Conductive substrates (3) bottom is flat region, extends substrate connecting portion (301) upwardly and outwardly, substrate connecting portion (301) has the 3rd fixing hole (302) from outer, bottom flat district; And on drive circuit board (2), have four fixing hole (204) corresponding with the 3rd fixing hole (302) position; Drive circuit board reverse side the 4th fixing hole (204) is around provided with and is electrically connected district (205) with second of the contact of conductive substrates (3).
5. IGTO encapsulating structure as claimed in claim 4, is characterized in that: also comprise a protective cover (4);
Protective cover (4) comprises protective cover (41) and lower protective cover (42); The crimpless region overlay of GTO device (1) and drive circuit board (2) is only protected by protective cover (4); The upper side of lower protective cover (42) is provided with perforate (421), for holding conductive substrates (3); The perforate (421) of lower protective cover (42) is provided with five fixing hole (422) corresponding with the 3rd fixing hole (302) position on substrate connecting portion (301) around; Use conduction screw (7) through the 5th fixing hole (422), the 3rd fixing hole (302), the 4th fixing hole (204); drive circuit board (2), conductive substrates (3) and lower protective cover (42) are fixed together, and makes the substrate connecting portion (301) of conductive substrates (3) be electrically connected district (205) close contact with second of drive circuit board reverse side to be electrically connected.
6. IGTO encapsulating structure as claimed in claim 2, is characterized in that:
The upper maximum central angle corresponding to a breach of cathode loop (10) of GTO device is greater than 25 degree.
7. IGTO encapsulating structure as claimed in claim 2, is characterized in that:
The material of GTO device gate pole ring (103) and cathode loop (104) is Copper Foil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520584521.6U CN204858955U (en) | 2015-08-05 | 2015-08-05 | Igto packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520584521.6U CN204858955U (en) | 2015-08-05 | 2015-08-05 | Igto packaging structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204858955U true CN204858955U (en) | 2015-12-09 |
Family
ID=54749467
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520584521.6U Withdrawn - After Issue CN204858955U (en) | 2015-08-05 | 2015-08-05 | Igto packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204858955U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006955A (en) * | 2015-08-05 | 2015-10-28 | 无锡同方微电子有限公司 | IGTO encapsulation structure |
-
2015
- 2015-08-05 CN CN201520584521.6U patent/CN204858955U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105006955A (en) * | 2015-08-05 | 2015-10-28 | 无锡同方微电子有限公司 | IGTO encapsulation structure |
| CN105006955B (en) * | 2015-08-05 | 2017-07-14 | 无锡同方微电子有限公司 | IGTO encapsulating structures |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: IGTO encapsulation structure Effective date of registration: 20170117 Granted publication date: 20151209 Pledgee: Agricultural Bank of China Limited by Share Ltd. Wuxi science and Technology Branch Pledgor: WUXI TONGFANG MICROELECTRONICS Co.,Ltd. Registration number: 2017990000043 |
|
| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20151209 Effective date of abandoning: 20170714 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20151209 Effective date of abandoning: 20170714 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20151209 Pledgee: Agricultural Bank of China Limited by Share Ltd. Wuxi science and Technology Branch Pledgor: WUXI TONGFANG MICROELECTRONICS Co.,Ltd. Registration number: 2017990000043 |