CN104701274A - Power module with double radiators - Google Patents
Power module with double radiators Download PDFInfo
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- CN104701274A CN104701274A CN201310666548.5A CN201310666548A CN104701274A CN 104701274 A CN104701274 A CN 104701274A CN 201310666548 A CN201310666548 A CN 201310666548A CN 104701274 A CN104701274 A CN 104701274A
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- cermet substrate
- circuit board
- printed circuit
- radiator
- emitter
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Abstract
The invention relates to a power module with double radiators. A lower metal-clad ceramic substrate is fixedly connected with the lower radiator through a copper substrate. A collector of a semiconductor chip is connected with the lower metal-clad ceramic substrate; an emitter of the semiconductor and a gate thereof are connected with an emitter of an upper metal-clad ceramic substrate and a gate thereof, respectively; an upper radiator is fixed to the top of the upper metal-clad ceramic substrate; a printed circuit board which is hollow is mounted on the copper substrate; an emitter outgoing end of the upper metal-clad ceramic substrate and a gate outgoing end thereof are both connected with the printed circuit board; a collector area of the lower metal-clad ceramic substrate is connected with the printed circuit board; the printed circuit board is provided with two electrode holders corresponding to each other and a terminal holder; a housing is mounted on the copper substrate and covers the upper metal-clad ceramic substrate; the electrode holders and the terminal holder penetrate the housing and are disposed on the top of the housing; the housing is provided with a window allowing penetration of the upper radiator. The power module is reasonable in structure, easier to manufacture, lower in manufacturing cost and capable of running efficiently and reliably for a long period of time.
Description
Technical field
The present invention relates to a kind of power model with double-radiator, belong to the technical field of heat dissipation of power model.
Background technology
Semi-conductor power module mainly comprises copper base, covers cermet substrate, semiconductor chip and electrode terminal and housing.In the course of the work, to semi-conductor power module the heat that semiconductor chip produces be passed on the radiator with its underpart by copper base, shed by the heat of semiconductor chip.Along with the development of technology, the power of power device is more and more higher, and the power consumption of semiconductor chip is also increasing gradually, and often the heat that produces of semiconductor chip is also increasing, heat as semiconductor chip sheds not in time, has a strong impact on the service behaviour of power model.The cooling mechanism of current power model mostly adopts finned radiator, this radiator is connected to the bottom of copper base, therefore semiconductor chip is one side heat radiation, and one side heat radiation can not meet the cooling requirements of high power semiconductor chip, now in the urgent need to adopting new technology solve the performance of heat radiation thus ensure that modular high-performance uses reliably for a long time.
Summary of the invention
The object of this invention is to provide a kind of rational in infrastructure, manufacture difficulty and manufacturing cost can be reduced, the power model with double-radiator of power model heat radiation reliability can be improved.
The present invention is the technical scheme achieved the above object: a kind of power model with double-radiator, comprise copper base, cover cermet substrate and semiconductor chip, it is characterized in that: described cover cermet substrate comprise cover cermet substrate and under cover cermet substrate, under cover cermet substrate and be fixed on copper base, copper base is fixedly connected with lower radiator, semiconductor chip be arranged on cover cermet substrate and under cover between cermet substrate, and the collector electrode of semiconductor chip with under cover cermet substrate and be connected, emitter and grid are connected with the emitter region above covered on cermet substrate and gate regions respectively, upper radiator is fixed on the top covering cermet substrate, the printed circuit board of hollow is arranged on copper base, on cover its emitter exit of cermet substrate and be connected with printed circuit board respectively with gate terminal, under cover cermet substrate collector area be connected with printed circuit board, printed circuit board is provided with two corresponding electrode tip holders and terminal base, shell to be arranged on copper base and to cover on and covers cermet substrate, electrode tip holder and terminal base pass shell and are arranged on the top of shell, shell is provided with the window that radiator passes.
Of the present invention cover cermet substrate comprise cover cermet substrate and under cover cermet substrate, being welded on down by the collector electrode of semiconductor chip covers on cermet substrate, its emitter and grid are connected with the emitter above covered on cermet substrate and grid respectively, semiconductor chip being connected to two covers between cermet substrate, and under cover cermet substrate by copper base and be connected with lower radiator, on cover cermet substrate and be connected with upper radiator again, therefore by upper, lower two radiators shed in time to the heat produced in semiconductor chip work, the integral heat sink effect of power model can be improved, can use for a long time reliably by guaranteed output modular high-performance, improve the useful life of power model.Ceramic layer the present invention's utilization being covered its inside of cermet substrate plays electrical insulation properties, and be connected with printed circuit board by two exits above covering cermet substrate, signal terminal is caused printed circuit board, and under cover cermet substrate collector area also cause on printed circuit board, by setting electrode tip holder on a printed circuit board and the connection of terminal base extraction shell realization and external circuit, rational in infrastructure, domain manufacture difficulty and the welding procedure of cermet substrate is covered on significantly reducing, flexibly and easily each electrode terminal and signal terminal can be drawn.The present invention is provided with the window that radiator passes on shell, passing shell, directly contacting being connected to the radiator covered on cermet substrate with extraneous air, and improving radiating effect.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, embodiments of the invention are described in further detail.
Fig. 1 is the structural representation of the present invention with the power model of double-radiator.
Fig. 2 is the perspective view of the present invention with the power model dismounting shell of double-radiator.
Fig. 3 is structural representation the present invention being covered cermet substrate.
Wherein: 1-lower radiator, 2-copper base, 3-printed circuit board, 4-shell, 4-1-window, 5-under cover cermet substrate, 6-semiconductor chip, 7-molybdenum sheet, 8-above cover cermet substrate, 8-1-emitter exit, 8-2-gate terminal, 9-upper radiator, 10-electrode tip holder, 11-securing member, 12-terminal base.
Embodiment
See shown in Fig. 1,2, the present invention is with the power model of double-radiator, and comprise copper base 2, cover cermet substrate and semiconductor chip 6, this semiconductor chip 6 can adopt metal-oxide-semiconductor, IGBT or thyristor etc.
See Fig. 1, shown in 2, of the present invention cover cermet substrate comprise cover cermet substrate 8 and under cover cermet substrate 5, on cover cermet substrate 8 and under cover cermet substrate 5 and form by ceramic layer and the metal level that overlays on ceramic layer upper and lower surface, under cover cermet substrate 5 and be fixed on copper base 2, can adopt the mode of welding by under cover cermet substrate 5 and be welded on copper base 2, and copper base 2 is fixedly connected with lower radiator 1, copper base 2 can adopt heat-conducting glue to be fixed on lower radiator 1, the connection area of its lower radiator 1 is greater than the area of copper base 2, semiconductor chip 6 be arranged on cover cermet substrate 8 and under cover between cermet substrate 5, the collector electrode of semiconductor chip 6 with under cover cermet substrate 5 and be connected, emitter and grid are connected with the emitter region above covered on cermet substrate 8 and gate regions respectively, under cover cermet substrate 5 collector area be connected with printed circuit board 3, semiconductor chip 6 by bottom weld tabs with under cover cermet substrate 5 and weld, by the collector electrode of semiconductor chip 6 with under cover cermet substrate 5 and be connected, and under cover cermet substrate 5 collector area weld with printed circuit board 3, collector electrode is caused on printed circuit board 3.Cover cermet substrate 8 on of the present invention and be provided with domain, the emitter of semiconductor chip 6 and grid connect with the emitter region and gate regions welding heat above covering cermet substrate 8 respectively by the weld tabs on top, the present invention reduces semiconductor chip 6 and the thermal coefficient of expansion above covered when cermet substrate 8 is connected, the emitter of semiconductor chip 6 of the present invention is connected with the emitter region above covered on cermet substrate 8 and gate regions respectively by molybdenum sheet 7 with grid, upper radiator 9 is fixed on the top covering cermet substrate 8, by heat-conducting glue, upper radiator 9 is fixed on the top covering cermet substrate 8 equally, and the ceramic layer covering insulation in cermet substrate 8 on utilizing plays electric insulation property, radiator 9 can be realized and lower radiator 1 dispels the heat to semiconductor chip 6 simultaneously.
See Fig. 1, shown in 2, the printed circuit board 3 of hollow of the present invention is arranged on copper base 2, this printed circuit board 3 comprises insulating barrier and overlays on the layers of copper formation on insulating barrier two sides, the layers of copper of printed circuit board 3 is provided with domain, printed circuit board 3 is arranged on copper base 2 by securing member 11, on cover its emitter exit of cermet substrate 8 8-1 and be connected with printed circuit board 3 respectively with gate terminal 8-2, as shown in Figure 2, emitter exit 8-1 of the present invention and gate terminal 8-2 is respectively equipped with connecting hole, and printed circuit board 3 is provided with corresponding installing hole, emitter exit 8-1 and gate terminal 8-2 is fixed on printed circuit board 3 by electric-conductor, electric-conductor can adopt metal fastener or rivet etc., by on cover its emitter exit of cermet substrate 8 8-1 and be reliably connected with printed circuit board 3 with gate terminal 8-2, also convenient by solder by cover its emitter exit of cermet substrate 8 8-1 and be reliably connected with printed circuit board 3 with gate terminal 8-2, the emitter of semiconductor chip 6 and grid are caused on printed circuit board 3.
See shown in Fig. 1,2, printed circuit board 3 of the present invention is provided with corresponding two electrode tip holders 10 and a terminal base 12, the emitter and collector of semiconductor chip is caused on two electrode tip holders 10, and grid causes terminal base 12, be connected with outside circuit with terminal base 12 by two electrode tip holders 10.
See shown in Fig. 1,2, shell 4 of the present invention is arranged on copper base 2, be arranged on copper base 2 by securing member, shell 4 is provided with inner stopper and matches with copper base 2 periphery, the convenient location to shell 4, and shell 4 covers on and covers cermet substrate 8, electrode tip holder 10 and terminal base 12 pass shell 4 and are arranged on the top of shell 4, shell 4 is provided with the window 4-1 that radiator 9 passes, and radiator 9 is passed, and radiator 9 is contacted with extraneous air.The present invention is dispelled the heat to semiconductor chip 6 by upper and lower two radiators, improves radiating effect.
Claims (4)
1. the power model with double-radiator, comprise copper base (2), cover cermet substrate and semiconductor chip (6), it is characterized in that: described cover cermet substrate comprise cover cermet substrate (8) and under cover cermet substrate (5), under cover cermet substrate (5) and be fixed on copper base (2), copper base (2) is fixedly connected with lower radiator (1), semiconductor chip (6) be arranged on cover cermet substrate (8) and under cover between cermet substrate (5), and the collector electrode of semiconductor chip (6) with under cover cermet substrate (5) and be connected, emitter and grid are connected with the emitter region above covered on cermet substrate (8) and gate regions respectively, upper radiator (9) is fixed on the top covering cermet substrate (8), the printed circuit board (3) of hollow is arranged on copper base (2), on cover its emitter exit (8-1) of cermet substrate (8) and be connected with printed circuit board (3) respectively with gate terminal (8-2), under cover cermet substrate (5) collector area be connected with printed circuit board (3), printed circuit board (3) is provided with two corresponding electrode tip holders (10) and terminal base (12), shell (4) is arranged on copper base (2) and goes up and cover on and cover cermet substrate (8), electrode tip holder (10) and terminal base (12) pass shell (4) and are arranged on the top of shell (4), shell (4) is provided with the window (4-1) that radiator (9) passes.
2. the power model with double-radiator according to claim 1, is characterized in that: the emitter of described semiconductor chip (6) is connected with the emitter region above covered on cermet substrate (8) and gate regions respectively by molybdenum sheet (7) with grid.
3. the power model with double-radiator according to claim 1, is characterized in that: described printed circuit board (3) comprises insulating barrier and overlays on the metal level on insulating barrier two sides.
4. the power model with double-radiator according to claim 1, it is characterized in that: described emitter exit (8-1) and gate terminal (8-2) are respectively equipped with connecting hole, printed circuit board (3) is provided with corresponding installing hole, and emitter exit (8-1) and gate terminal (8-2) are fixed on printed circuit board (3) by electric-conductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310666548.5A CN104701274B (en) | 2013-12-10 | 2013-12-10 | Power model with double-radiator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310666548.5A CN104701274B (en) | 2013-12-10 | 2013-12-10 | Power model with double-radiator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104701274A true CN104701274A (en) | 2015-06-10 |
| CN104701274B CN104701274B (en) | 2017-11-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201310666548.5A Active CN104701274B (en) | 2013-12-10 | 2013-12-10 | Power model with double-radiator |
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| Country | Link |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934386A (en) * | 2015-06-16 | 2015-09-23 | 苏州旭创科技有限公司 | Packaging structure and optical module |
| CN105099564A (en) * | 2015-06-16 | 2015-11-25 | 苏州旭创科技有限公司 | Encapsulation structure and optical module |
| CN110246808A (en) * | 2018-03-09 | 2019-09-17 | 南京银茂微电子制造有限公司 | Power module and its manufacturing method with reduced junction temperature |
| FR3115654A1 (en) * | 2020-10-28 | 2022-04-29 | Valeo Systemes De Controle Moteur | Electronic assembly featuring an improved cooling system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010055714A1 (en) * | 2000-05-22 | 2001-12-27 | Alstom | Electronic power device |
| JP2002164485A (en) * | 2000-11-28 | 2002-06-07 | Toyota Industries Corp | Semiconductor module |
| CN101281904A (en) * | 2007-04-02 | 2008-10-08 | 株式会社日立制作所 | Power semiconductor module for inverter circuit system |
| US20110037166A1 (en) * | 2008-04-09 | 2011-02-17 | Fuji Electric Systems Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
-
2013
- 2013-12-10 CN CN201310666548.5A patent/CN104701274B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010055714A1 (en) * | 2000-05-22 | 2001-12-27 | Alstom | Electronic power device |
| JP2002164485A (en) * | 2000-11-28 | 2002-06-07 | Toyota Industries Corp | Semiconductor module |
| CN101281904A (en) * | 2007-04-02 | 2008-10-08 | 株式会社日立制作所 | Power semiconductor module for inverter circuit system |
| US20110037166A1 (en) * | 2008-04-09 | 2011-02-17 | Fuji Electric Systems Co., Ltd. | Semiconductor device and semiconductor device manufacturing method |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104934386A (en) * | 2015-06-16 | 2015-09-23 | 苏州旭创科技有限公司 | Packaging structure and optical module |
| CN105099564A (en) * | 2015-06-16 | 2015-11-25 | 苏州旭创科技有限公司 | Encapsulation structure and optical module |
| CN104934386B (en) * | 2015-06-16 | 2017-11-28 | 苏州旭创科技有限公司 | Encapsulating structure and optical module |
| CN105099564B (en) * | 2015-06-16 | 2018-04-10 | 苏州旭创科技有限公司 | Encapsulating structure and optical module |
| CN110246808A (en) * | 2018-03-09 | 2019-09-17 | 南京银茂微电子制造有限公司 | Power module and its manufacturing method with reduced junction temperature |
| CN110246808B (en) * | 2018-03-09 | 2021-08-10 | 南京银茂微电子制造有限公司 | Power module with reduced junction temperature and method of manufacturing the same |
| FR3115654A1 (en) * | 2020-10-28 | 2022-04-29 | Valeo Systemes De Controle Moteur | Electronic assembly featuring an improved cooling system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104701274B (en) | 2017-11-14 |
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