CN206148429U - High -power IGBT module convenient to establish ties and use - Google Patents
High -power IGBT module convenient to establish ties and use Download PDFInfo
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- CN206148429U CN206148429U CN201620356491.8U CN201620356491U CN206148429U CN 206148429 U CN206148429 U CN 206148429U CN 201620356491 U CN201620356491 U CN 201620356491U CN 206148429 U CN206148429 U CN 206148429U
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 70
- 239000002184 metal Substances 0.000 claims abstract description 70
- 239000004065 semiconductor Substances 0.000 claims abstract description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 37
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 239000010949 copper Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000002788 crimping Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005493 welding type Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000000080 chela (arthropods) Anatomy 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4846—Connecting portions with multiple bonds on the same bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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Abstract
The utility model provides a high -power IGBT module convenient to establish ties and use, including power subelement, metal electrode board and outside tube, the metal electrode board sets up the externally bottom of tube, outside tube includes that two are listed as square frame, two are listed as and leave the space between the square frame and form a strip frame, the power subelement set up in square frame and with metal electrode board in close contact with, it includes metal end cap, grid PCB board, auxiliary grid PCB board and a plurality of power semiconductor chip, the auxiliary grid PCB board sets up in the strip frame, metal end cap, metal electrode board and grid PCB board respectively with collecting electrode, projecting pole and the grid electrical connection of power semiconductor chip. Compared with the prior art, the utility model provides a pair of high -power IGBT module convenient to establish ties and use, the existing series connection that does benefit to power semiconductor does not need too big clamper pressure simultaneously, has reduced power semiconductor in the requirement of practical application in -process to mechanical structure.
Description
Technical field
This utility model is related to the encapsulation technology field of igbt, and in particular to a kind of big work(for being easy to be used in series
Rate IGBT module.
Background technology
Igbt (Insulated Gate Bipolar Transistor-IGBT) combines MOSFET and BJT two
The advantage of person, with voltage drive, on-state voltage drop is low, current capacity is big the features such as, be widely used in industry, traffic, electricity
The fields such as power, military affairs, aviation and electronic information.Forms of the welding type IGBT based on bonding line conduction, by multiple chips simultaneously
Connection is realized high-power, and current technology is highly developed.Compression joint type IGBT combines the advantage of both GTO and IGBT, tool
The features such as having two-side radiation, high reliability and short-circuit failure, is very suitable for the series connection application such as power system, ship.
For solder type IGBT, high current is realized by multiple chips form in parallel, but due to its encapsulating structure, caused
When power grade is too big, between chip there is very big discordance in CURRENT DISTRIBUTION, and this is caused due to encapsulating geometry, this
The encapsulating structure of outer one side radiating, it is impossible to enough easily to connect as crimp type IGBT device.Compression joint type IGBT, Ke Yishi
The intensive parallel connection of existing multiple chips, but the pressure consistency requirement to chip is very high, and device operationally needs very big pincers
Position pressure, so as to propose very high mechanical requirements to system.
Since the concept of IGBT is proposed from nineteen eighty-two, the IGBT of welding type has widely realized commercialization, big work(at present
The welding type IGBT device manufacturer of rate mainly has car etc. in Rhizoma Sparganii, Infineon, FUJI ELECTRIC, China.Existing two kinds of masters
Stream crimping form is the Press Pack IGBT of the StakPak crimp type IGBT and Westcode companies that ABB AB releases.It is public
The number of opening discloses a kind of high-power semiconductor module of ABB AB for the utility model patent of CN1596472A, and its crimping is logical
Cross disc spring to realize, be advantageously implemented the uniform properties of pressure distribution.The utility model patent of Publication No. US6678163B1 is public
The crimp type IGBT encapsulating structures of Westcode companies are opened, this structure is conducive to two-side radiation, but is perpendicular to chip list
The mode of all hard crimping on the direction of face, for the coherence request pole of chip, molybdenum sheet, the thickness of silver strip and boss height
Height, because trickle thickness will cause the dramatic difference of pressure, so as to cause thermal resistance difference too big or due directly to excessive pressure
Power causes the physical damage of chip.
Utility model content
In order to meet the needs of prior art, this utility model provides a kind of high-power IGBT module for being easy to be used in series.
The technical solution of the utility model is：
The high-power IGBT module includes power subelement (1), metal electrode board (3) and outside shell (4)；
The metal electrode board (3) is arranged on the bottom of the outside shell (4)；
Including two row quadras, each column quadra includes multiple quadras being sequentially arranged to the outside shell (4)；Institute
State and formation one strip framework in space is left between two row quadras；
The power subelement (1) is arranged in the quadra and is in close contact with the metal electrode board (3), its bag
Include metal end (11), grid pcb board (17), auxiliary grid pcb board (2) and multiple power semiconductor chips (13)；
The auxiliary grid pcb board (2) is arranged in the strip framework, its pass through the through hole (5) of the quadra with
Grid pcb board (17) connects；The metal end (11), metal electrode board (3) and grid pcb board (17) are respectively
Colelctor electrode, emitter stage and grid electrical connection with the power semiconductor chip (13).
The preferred embodiment that this utility model is further provided for is：The power subelement (1) also include insulated substrate (15),
Conducting metal block (16) and subelement framework (18)；
The upper surface of the insulated substrate (15) is laid with square layers of copper (14), and its surface area is less than the insulated substrate (15)
Surface area；Four edges of the square layers of copper (14) are equally spaced multiple power semiconductor chips (13), the side
The central authorities of shape layers of copper (14) arrange a copper post (141), the other end of the copper post (141) weld with metal end (11) or
Person's burn-back；
The conducting metal block (16) is the square metal block with a square groove, its bottom and the metal electrode board (3)
It is in close contact；Insulated substrate (15), square layers of copper (14) and power are sequentially arranged from the bottom to top in the square groove partly to lead
Body chip (13)；
The subelement framework (18) is set in the outside of the conducting metal block (16), for supporting the metal end (11)
With the metal electrode board (3)；The grid pcb board is arranged on the subelement framework (18) and conducting metal block (16)
Between.
The preferred embodiment that this utility model is further provided for is：The colelctor electrode side of the power semiconductor chip (13) and institute
Square layers of copper (14) contact is stated, its emitter stage is connected by emitter stage bonding line (121) with the conducting metal block (16),
Its grid is connected by gate bond line (12) with the grid pcb board；
The colelctor electrode of the power semiconductor chip (13), square layers of copper (14), copper post (141) and metal end (11)
Sequentially it is electrically connected；
The emitter stage of the power semiconductor chip (13), emitter stage bonding line (121), conducting metal block (16) and metal
Battery lead plate (3) is sequentially electrically connected；
The grid of the power semiconductor chip (13), gate bond line (12), grid pcb board (17) and auxiliary grid
Pcb board (2) is sequentially electrically connected.
The preferred embodiment that this utility model is further provided for is：
The edge of the metal electrode board (3) is provided with an auxiliary emitter electrode terminal, the auxiliary emitter electrode terminal and the auxiliary
The part that grid pcb board (2) is drawn outside the strip framework is corresponding.
The preferred embodiment that this utility model is further provided for is：
Filling transparent silica gel inside the power subelement (1).
The preferred embodiment that this utility model is further provided for is：
The outside shell (4) is using ceramics or high strength composite.
Compared with immediate prior art, the beneficial effects of the utility model are：
1st, a kind of high-power IGBT module for being easy to be used in series that this utility model is provided, not only improves power semiconductor
Series connection, without the need for too big clamper pressure, reduce power semiconductor in actual application to frame for movement
Requirement；
2nd, a kind of high-power IGBT module for being easy to be used in series that this utility model is provided, can select according to required current class
Suitable power semiconductor parallel connection quantity is selected, such that it is able to the power grade of high-power IGBT module is adjusted flexibly；
3rd, a kind of high-power IGBT module for being easy to be used in series that this utility model is provided, relative to crimp type IGBT device
For, its pressure is not required to be applied directly on power semiconductor chip, therefore is not required to consider to apply the whether consistent problem of pressure；
4th, a kind of high-power IGBT module for being easy to be used in series that this utility model is provided, relative to solder type IGBT device
For, it is possible to achieve the Current compliance of two-side radiation and each power semiconductor chip is more preferable.
Description of the drawings
Fig. 1：A kind of high-power IGBT module diagram for being easy to be used in series in this utility model embodiment；
Fig. 2：A kind of high-power IGBT decomposition module schematic diagram for being easy to be used in series in this utility model embodiment；
Fig. 3：Power subelement interior views in this utility model embodiment；
Fig. 4：Power subelement inside top figure in this utility model embodiment；
Fig. 5：Power subelement internal view in this utility model embodiment；
Fig. 6：Grid pcb board and auxiliary grid pcb board layout in this utility model embodiment；
Wherein, 1：Power subelement；11：Metal end；12：Gate bond line；121：Emitter stage bonding line；13：Work(
Rate semiconductor chip；14：Square layers of copper；141：Copper post；15：Insulated substrate；16：Conducting metal block；17：Grid PCB
Plate；18：Subelement framework；2：Auxiliary grid pcb board；3：Metal electrode board；31：Auxiliary emitter electrode terminal；4：Outward
Portion's shell；5：Through hole.
Specific embodiment
To make purpose, technical scheme and the advantage of this utility model embodiment clearer, implement below in conjunction with this utility model
Accompanying drawing in example, is clearly and completely illustrated, it is clear that described reality to the technical scheme in this utility model embodiment
It is a part of embodiment of this utility model to apply example, rather than the embodiment of whole.Based on the embodiment in this utility model, ability
The every other embodiment that domain those of ordinary skill is obtained under the premise of creative work is not made, belongs to this utility model
The scope of protection.
Accompanying drawing is combined separately below, is easy to the high-power IGBT module being used in series to enter a kind of of this utility model embodiment offer
Row explanation.
Fig. 1 is a kind of high-power IGBT module diagram for being easy to be used in series in this utility model embodiment, and Fig. 2 is this practicality
A kind of high-power IGBT decomposition module schematic diagram for being easy to be used in series in new embodiment, as illustrated in fig. 1 and 2, this enforcement
High-power IGBT module includes power subelement 1, metal electrode board 3 and outside shell 4 in example.Wherein,
Metal electrode board 3 is arranged on the bottom of outside shell 4.
Outside shell 4 includes two row quadras, and each column quadra includes multiple quadras being sequentially arranged, while two row
Space is left between quadra and forms a strip framework.Outside shell 4 is using ceramics or high-strength composite in the present embodiment
Material.
Power subelement 1 is arranged in quadra and is in close contact with metal electrode board 3, power subelement 1 in the present embodiment
Fill the transparent silica gel for electric insulation in inside.
Fig. 3 is power subelement interior views in this utility model embodiment, and Fig. 4 is that power is single in this utility model embodiment
First inside top figure, as shown in Figures 3 and 4, power subelement 1 includes metal end 11, grid pcb board in the present embodiment
17th, auxiliary grid pcb board 3, multiple power semiconductor chips 13, insulated substrate 15, conducting metal block 16 and subelement
Framework 18.Metal end 11, metal electrode board 3 and grid pcb board 17 colelctor electrode respectively with power semiconductor chip 13,
Emitter stage and grid are electrically connected.Wherein,
1st, auxiliary grid pcb board
Auxiliary grid pcb board 2 is arranged in the strip framework of outside shell 4 in the present embodiment, and it is by the through hole of quadra
5 are connected with grid pcb board 17.
2nd, insulated substrate
The upper surface of insulated substrate 15 is laid with square layers of copper 14 in the present embodiment, surface of its surface area less than insulated substrate 15
Product, so as to there is enough spaces to can ensure that the requirement of insulation.Four edges of square layers of copper 14 are equally spaced multiple power
Semiconductor chip 13, central authorities arrange a copper post 141, and the other end and the metal end 11 of the copper post 141 are welded or burn-back.
3rd, conducting metal block
Fig. 5 is power subelement internal view in this utility model embodiment, as illustrated, conducting metal block in the present embodiment
16 is the square metal block with a square groove, and its bottom is in close contact with metal electrode board 3.In square groove from the bottom to top
It has been sequentially arranged insulated substrate 15, square layers of copper 14 and power semiconductor chip 13.
4th, subelement framework
The present embodiment neutron cells framework 18 is set in the outside of conducting metal block 16, for supporting metal end 11 with metal electricity
Pole plate 3.
Fig. 6 is grid pcb board and auxiliary grid pcb board layout in this utility model embodiment, as illustrated, this enforcement
Grid pcb board is arranged between subelement framework 18 and conducting metal block 16 in example, and auxiliary grid pcb board 2 draws strip
Gate terminal of the outer part of framework as high-power IGBT module.Meanwhile, as shown in figure 1, metal electrode in the present embodiment
The edge of plate 3 is provided with an auxiliary emitter electrode terminal 31, and the auxiliary emitter electrode terminal 31 is drawn with auxiliary grid pcb board 2
Part outside strip framework is corresponding.
As shown in Figures 4 and 5, the colelctor electrode side of power semiconductor chip 13 contacts with square layers of copper 14 in the present embodiment, its
Emitter stage is connected by emitter stage bonding line 121 with conducting metal block 16, and its grid is by gate bond line 12 and grid PCB
Plate connects.Wherein,
The colelctor electrode of power semiconductor chip 13, square layers of copper 14, copper post 141 and metal end 11 are sequentially electrically connected, work(
The emitter stage of rate semiconductor chip 13, emitter stage bonding line 121, conducting metal block 16 and metal electrode board 3 sequentially electrically connect
Connect, the grid of power semiconductor chip 13, gate bond line 12, grid pcb board 17 and auxiliary grid pcb board 2 are sequentially
Electrical connection.
Power semiconductor chip 13 includes igbt chip and Diode chips in the present embodiment, and the quantitative proportion of the two can be in advance
It is preset.Power semiconductor chip 13 is set in qually spaced in four edges of square layers of copper 14, is not limited only to each shown in Fig. 4
Edge arranges 4 power semiconductor chips 13, can be any number of power semiconductor chip 13, or with square copper
The central shaft of layer 14 is the rounded distribution of axis of symmetry.
A kind of high-power IGBT module for being easy to be used in series, not only improves power semiconductor in this utility model embodiment
Series connection, without the need for too big clamper pressure, reduce power semiconductor in actual application to frame for movement
Requirement.
Obviously, those skilled in the art can carry out various changes and modification without deviating from of the present utility model to this utility model
Spirit and scope.So, if these modifications of the present utility model and modification belong to this utility model claim and its equivalent skill
Within the scope of art, then this utility model is also intended to comprising these changes and modification.
Claims (6)
1. a kind of high-power IGBT module for being easy to be used in series, it is characterised in that the high-power IGBT module includes work(
Rate subelement (1), metal electrode board (3) and outside shell (4)；
The metal electrode board (3) is arranged on the bottom of the outside shell (4)；
Including two row quadras, each column quadra includes multiple quadras being sequentially arranged to the outside shell (4)；Institute
State and formation one strip framework in space is left between two row quadras；
The power subelement (1) is arranged in the quadra and is in close contact with the metal electrode board (3), its bag
Include metal end (11), grid pcb board (17), auxiliary grid pcb board (2) and multiple power semiconductor chips (13)；
The auxiliary grid pcb board (2) is arranged in the strip framework, its pass through the through hole (5) of the quadra with
Grid pcb board (17) connects；The metal end (11), metal electrode board (3) and grid pcb board (17) are respectively
Colelctor electrode, emitter stage and grid electrical connection with the power semiconductor chip (13).
2. a kind of high-power IGBT module for being easy to be used in series as claimed in claim 1, it is characterised in that the power
Subelement (1) also includes insulated substrate (15), conducting metal block (16) and subelement framework (18)；
The upper surface of the insulated substrate (15) is laid with square layers of copper (14), and its surface area is less than the insulated substrate (15)
Surface area；Four edges of the square layers of copper (14) are equally spaced multiple power semiconductor chips (13), the side
The central authorities of shape layers of copper (14) arrange a copper post (141), the other end of the copper post (141) weld with metal end (11) or
Person's burn-back；
The conducting metal block (16) is the square metal block with a square groove, its bottom and the metal electrode board (3)
It is in close contact；Insulated substrate (15), square layers of copper (14) and power are sequentially arranged from the bottom to top in the square groove partly to lead
Body chip (13)；
The subelement framework (18) is set in the outside of the conducting metal block (16), for supporting the metal end (11)
With the metal electrode board (3)；The grid pcb board is arranged on the subelement framework (18) and conducting metal block (16)
Between.
3. a kind of high-power IGBT module for being easy to be used in series as claimed in claim 2, it is characterised in that the power
The colelctor electrode side of semiconductor chip (13) contacts with the square layers of copper (14), and its emitter stage passes through emitter stage bonding line (121)
It is connected with the conducting metal block (16), its grid is connected by gate bond line (12) with the grid pcb board；
The colelctor electrode of the power semiconductor chip (13), square layers of copper (14), copper post (141) and metal end (11)
Sequentially it is electrically connected；
The emitter stage of the power semiconductor chip (13), emitter stage bonding line (121), conducting metal block (16) and metal
Battery lead plate (3) is sequentially electrically connected；
The grid of the power semiconductor chip (13), gate bond line (12), grid pcb board (17) and auxiliary grid
Pcb board (2) is sequentially electrically connected.
4. a kind of high-power IGBT module for being easy to be used in series as claimed in claim 1, it is characterised in that
The edge of the metal electrode board (3) is provided with an auxiliary emitter electrode terminal, the auxiliary emitter electrode terminal and the auxiliary
The part that grid pcb board (2) is drawn outside the strip framework is corresponding.
5. a kind of high-power IGBT module for being easy to be used in series as claimed in claim 1, it is characterised in that
Filling transparent silica gel inside the power subelement (1).
6. a kind of high-power IGBT module for being easy to be used in series as claimed in claim 1, it is characterised in that
The outside shell (4) is using ceramics or high strength composite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620356491.8U CN206148429U (en) | 2016-04-25 | 2016-04-25 | High -power IGBT module convenient to establish ties and use |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620356491.8U CN206148429U (en) | 2016-04-25 | 2016-04-25 | High -power IGBT module convenient to establish ties and use |
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| Publication Number | Publication Date |
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| CN206148429U true CN206148429U (en) | 2017-05-03 |
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| CN201620356491.8U Expired - Fee Related CN206148429U (en) | 2016-04-25 | 2016-04-25 | High -power IGBT module convenient to establish ties and use |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107305886A (en) * | 2016-04-25 | 2017-10-31 | 华北电力大学 | A kind of high-power IGBT module for being easy to be used in series |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107305886A (en) * | 2016-04-25 | 2017-10-31 | 华北电力大学 | A kind of high-power IGBT module for being easy to be used in series |
| CN107305886B (en) * | 2016-04-25 | 2024-04-05 | 华北电力大学 | High-power IGBT module convenient to use in series |
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