CN102029922B - Double-sided aluminum substrate-based power metal oxide semiconductor field effect transistor (MOSFET) parallel circuit and structural design - Google Patents
Double-sided aluminum substrate-based power metal oxide semiconductor field effect transistor (MOSFET) parallel circuit and structural design Download PDFInfo
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Abstract
The invention relates to the structural design of a power drive unit for an electric vehicle, in particular to the structural design of a double-sided aluminum substrate-based power metal oxide semiconductor field effect transistor (MOSFET) parallel circuit. In the invention, a novel process structure is designed for the structural characteristics of a circuit formed by connecting a plurality of MOSFETs in parallel. In the structure, a double-sided epoxy board is laminated on a conventional aluminum substrate so as to achieve relatively higher power density and high thermal conductivity with a relatively smaller board area. The invention comprises the process structural design of the three-phase parallel circuit with the double-sided aluminum substrate, the thermal conduction treatment of the MOSFET and the aluminum substrate, the five-layer structure of the double-sided aluminum substrate, the structural design for signal input/output, the structural design for power input and drive signal output and the structural design for electrical property characteristics of the double-sided aluminum substrate, wherein the parallel connection of the corresponding MOSFETs is realized in each convergent area in the structural design of the three-phase parallel circuit with the double-sided aluminum substrate; in the thermal conduction treatment of the MOSFET and the aluminum substrate, an array through hole soldering-pan is adopted and thermal conduction is better realized between each power MOSFET and the aluminum substrate; in the structural design for the signal input/output, a control signal is input to each parallel MOSFET by the same connector; in the structural design for the power input and the drive signal output, ports connected in a pressure welding way are arranged, a circular soldering-pan is adopted and simultaneously the connecting way of bolt fastening is adopted.
Description
Technical field
The present invention relates to a kind of structure design of power drive unit used for electric vehicle, specifically a kind of power MOSFET circuit parallel based on double-face aluminium substrate and structure design thereof.
Background technology
Along with day by day reducing and the growing interest of mankind's environmental pollution of petroleum-based energy, the electronlmobil formed with permanent-magnet synchronous and AC induction motor now and hybrid power automobile power system have caused showing great attention to of each automobile vendor.Power system mainly contains both direction at present, and a class take lead-acid storage battery as the low-pressure system of electrical source of power, and voltage, generally within 100V, is mainly used in electrocar; Another kind of, be high-pressure system, its voltage, at more than 200V, is mainly used in high-speed multiply electronlmobil and hybrid power big bus.In low-pressure system, Lead-acid Battery Technology is very ripe, and properties of product are stablized, and thus low-pressure electric System Development is very fast at present.In existing power device, MOSFET is fast with its switching speed, and control circuit is simple, is easy to the features such as parallel connection, is very applicable to this low-pressure electric system.The channel resistance of low pressure MOSFET is generally in tens milliohms, even lower (the MOSFET of employing trench technique, its channel resistance can accomplish a few milliohm), its conduction loss is very low like this, its channel resistance has positive temperature coefficient in addition, and make MOSFET be suitable in parallel use, the current capacity ideally after parallel connection is each individual devices electric current sum, thus according to system power requirement, the number of paralleling MOS FET can be determined.But the shortcoming using multiple paralleling MOS FET to bring is, adds device and connect and heat dissipation problem.
Along with the progress of science and technology, new power device is also constantly applied to various occasion, as IGBT.IGBT is generally made into module, and control and mouth, in an encapsulation, are drawn by multiple device package in the manner of pins, and thus its circuit connects very simple, and heat radiation also easily processes.Although IGBT has above advantage, its price is very expensive, and at this low pressure low-power system, use IGBT, cost comparatively MOSFET will exceed a lot, therefore MOSFET or the first-selected element of low-pressure system.
Use for multiple MOSFET parallel connection at present, its structure design mainly contains two kinds: 1) connect based on DC master row, the specific implementation method of this structure is roughly as follows: first planned the distribution of element and the connection mode of DC master row, then the MOSFET element on pcb board will be welded on, linked together by the DC master row designed, the major defect of this method has: mounting process is complicated, and actual production efficiency of getting up is lower, and maintenance and debugging very inconvenient; 2) based on single-sided aluminum-base plate structure: this method uses paster power MOSFET, single-sided aluminum-base plate uses individual layer Copper Foil to connect, and its current return needs larger area.Single-sided aluminum-base plate structure is compared with DC master row connection structure, and its mounting process simplifies greatly, has overcome the shortcoming of DC master row structure, but this structure also has its shortcoming, and that is exactly that its power density is lower.Certainly except above two kinds of methods, also have some other method, but have certain shortcoming.For the shortcoming of above method, design a kind of new structural manufacturing process here: based on the structure of double-face aluminium substrate.This structure is lamination a pair of face epoxy plate on conventional aluminum substrate, with less plate area, can provide larger power density and good heat conductivity like this.
The content of invention
The present invention is in order to overcome deficiency of the prior art, there is provided a kind of new structural manufacturing process: based on the structure of double-face aluminium substrate, this structure is lamination a pair of face epoxy plate on conventional aluminum substrate, with less plate area, can provide larger power density and good heat conductivity like this.
The present invention solves the technical scheme that its technical matters takes: based on the structure of double-face aluminium substrate, this structure is lamination a pair of face epoxy plate on conventional aluminum substrate, with less plate area, larger power density and good heat conductivity can be provided like this.
The present invention includes a kind of technical-constructive design of parallel three phase circuit of double-face aluminium substrate, make each doab complete the parallel connection of corresponding MOSFET; A heat conduction process for MOSFET and aluminium base, the pad of MOSFET adopts array via pad, and every power MOSFET can be made like this to obtain better heat transfer between aluminium base; Comprise a kind of 5 Rotating fields of double-face aluminium substrate; A kind of input/output signal structure design, makes the MOSFET of each parallel connection by same adaptor union input control signal; A kind of power supply input and the design of drive singal export structure, input/output terminal being provided with crimps the port that mode connects, and adopts circular pad, makes production operation simple by the connection mode of screw fastening, and efficiency is high and be easy to modularization, makes each model calling simple; A structure design for the electrical property feature of double-face aluminium substrate, two pieces of such structure parallel connections make outgoing current can reach 600Arms@2min.
The technical-constructive design of the parallel three phase circuit of described double-face aluminium substrate, in three-phase low-voltage electric system MOSFET in parallel as Fig. 1, Q1 to Q16 be the MOSFET of W phase, the MOSFET of Q13 to Q32 to be the MOSFET of V phase, Q33 to Q48 be U phase.Wherein Q1 to Q4 and Q13 to Q16, these 8 MOSFET parallel connections; These 8 MOSFET parallel connections of Q5 to Q12; Q17 to Q20 and Q29 to Q32, these 8 MOSFET parallel connections; Q21 to Q28, these 8 MOSFET parallel connections; Q33 to Q37 and Q46 to Q48, these 8 MOSFET parallel connections; These 8 MOSFET parallel connections of Q38 to Q45.Whole aluminium base as shown in Figure 2, can be divided into 3 regions by the distribution of U, V, W phase by the distribution of Q1 to Q48 on double-face aluminium substrate, and these 48 MOSFET are symmetrically distributed in these 3 regions.Q1 to Q8 is distributed in the region of upper left corner W phase, and Q9 to Q16 is distributed in the region of lower left corner W phase; Q17 to Q24 is distributed in the region of middle and upper part V phase, and Q25 to Q32 is distributed in the region of middle and lower part V phase; Q34 to Q41 is distributed in the region of upper right corner U phase, and Q33 and Q42 to Q48 is distributed in the region of lower right corner U phase.In fig. 2, give the current distribution of MOSFET simultaneously, because each phase current trend is consistent, make a concrete analysis of the current trend of W phase here.The current trend of W phase is as shown in left-half in Fig. 2, " B+ " is top layer PCB Copper Foil, it externally connects power positive end, to MOSFET annexation be, the drain electrode of the Q5 to Q12 of W phase connects " B+ " PCB Copper Foil, such electric current has power positive end to flow into the drain electrode of Q5 to Q12, source electrode from Q5 to Q12 flows out, the source electrode of Q5 to Q8 is connected with the drain electrode of Q1 to Q4, the source electrode of Q9 to Q12 is connected with the drain electrode of Q13 to Q16, in the drain electrode of Q1 to Q4 and the drain electrode of Q13 to Q16, one is respectively had externally to connect pad, by outside copper bar, Q1 to Q4 is connected with the drain electrode of Q13 to Q16, such Q1 to Q4 realizes in parallel with the drain electrode of Q13 to Q16, Q1 to Q4 is connected with power supply negative terminal " B-" by bottom PCB Copper Foil with the source electrode of Q13 to Q16, complete electric current and input to by " B+ " current return that " B-" export.In Fig. 2, namely each doab completes the parallel connection of corresponding MOSFET.Fig. 4 is PCB top layer diagram of wiring, the i.e. annexation of corresponding diagram 2.
The heat conduction process of described MOSFET and aluminium base: Fig. 3 is the schematic diagram that MOSFET welds with aluminium base, and MOSFET selects paster to encapsulate, on PCB, the pad of MOSFET, adopt array via pad, this pad heat-conducting effect is better.
Described double-face aluminium substrate is of five storeys, as shown in Figure 6.Ground floor is top layer Copper Foil, and this one deck is top layer conductive layer, and its copper thickness is generally at 35um ~ 140um; The second layer is FR-4 epoxy plate, and its thickness is generally at 0.2mm ~ 0.4mm; Third layer is bottom Copper Foil, and this one deck is bottom conductive layer; 4th layer is the insulating barrier of high thermal conductivity, and be generally the particular polymer of ceramic filler, its thickness is generally at 70um ~ 150um; Layer 5 is aluminium base, and this one deck also useful copper is basic unit, and the thickness of aluminium lamination is generally at 0.6mm ~ 2mm, the thickness of layers of copper is generally at 1.0mm ~ 2.0mm.
Described input and output terminal: as shown in Figure 5, the grid control signal of three-phase six road MOSFET is inputted this control desk by input terminal 16 by MOSFET control signal, to control the enablement and disablement time of each MOSFET, the MOSFET of each parallel connection is controlled by same control signal;
Described power supply input and drive singal export: this power model has two power inputs (as 13 in figure and 15) and three drive singal mouths (as the W phase in figure, U phase, V phase), on aluminium base, for these input/output terminal being provided with crimp port that mode connects (as 1 in figure, 2,3,4,5).Power input, adopts circular pad, as shown in Figure 3 " B+ copper post installation position " and " B-copper post installation position ".Mouth is for U phase, and during connection, linked together by the output of copper bar 4 by both sides, output is connected with screw assemblies 2 by copper sheathing 5, and U phase exports and exported by copper post 1, and copper bar 4 is fixedly connected with by holding screw 3 with copper post 1.This employing screw fastening connection mode has many good qualities relative to welding manner, and such as aluminium base dissipating area is large, welds more difficult; Production operation is simple, and efficiency is high; Be easy to modularization, each model calling is simple.
The structure of described double-face aluminium substrate is as 7,8,9,10,11 in figure, and double-face aluminium substrate is fixedly connected with radiator 12 by heat-conducting interface material 6.
The electrical property feature of described double-face aluminium substrate: the three phase electric machine drive plate be made up of Q1 to Q48 parallel connection, its maximum current output can reach 300Arms (@2min).Can also a standardized power module be regarded by the aluminium base of above patten's design, when needing larger power stage, can be in parallel by the aluminium base of above structure, only need by corresponding input and output terminal be linked together time in parallel.Such as by two pieces of such wired in parallel, its outgoing current can reach 600Arms (@2min).
Compared with prior art, the performance of its beneficial effect is as follows in the present invention:
The present invention uses the structure design based on the element with small capacity circuit parallel of double-face aluminium substrate.MOSFET is fast with its switching speed, and control circuit is simple, is easy to the features such as parallel connection, is very applicable to low-pressure electric system, and properties of product are stablized.Abandon the expensive shortcoming of IGBT, decrease the cost more than 25% of manufacturer.The present invention is based on the structure of double-face aluminium substrate, this structure, on the basis of single-sided aluminum-base plate, PCB increases one deck Copper Foil again, with less plate area, can provide larger power density like this.Adopt the connection mode of screw fastening simultaneously, have many good qualities relative to welding manner.Such as aluminium base dissipating area is large, welds more difficult etc.Adopt and make production operation simple in this way, efficiency is high; Be easy to modularization, each model calling is simple.The present invention coordinates MOSFET parallel-connection structure, and technique is easy to realize, and the use of supporting control system also has larger alerting ability, plays a positive role to promoting the use of of low-pressure electric system.
Accompanying drawing explanation
Fig. 1 is MOSFET principle of parallel figure of the present invention;
Fig. 2 is MOSFET distribution and current relationship on PCB of the present invention;
Fig. 3 is MOSFET weld characteristics figure of the present invention;
Fig. 4 is PCB top-level schematic of the present invention;
Fig. 5 is integral structure schematic diagram of the present invention;
Fig. 6 is double-face aluminium substrate constructional drawing of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing and detailed description of the invention, the present invention is described further:
As Fig. 1, planning principle figure, analyzes the distribution of MOSFET on PCB.In three-phase low-voltage electric system MOSFET in parallel as Fig. 1, Q1 to Q16 be the MOSFET of W phase, the MOSFET of Q13 to Q32 to be the MOSFET of V phase, Q33 to Q48 be U phase.Wherein Q1 to Q4 and Q13 to Q16, these 8 MOSFET parallel connections; These 8 MOSFET parallel connections of Q5 to Q12; Q17 to Q20 and Q29 to Q32, these 8 MOSFET parallel connections; Q21 to Q28, these 8 MOSFET parallel connections; Q33 to Q37 and Q46 to Q48, these 8 MOSFET parallel connections; These 8 MOSFET parallel connections of Q38 to Q45.Whole aluminium base as shown in Figure 2, can be divided into 3 regions by the distribution of U, V, W phase by the distribution of Q1 to Q48 on double-face aluminium substrate, and these 48 MOSFET are symmetrically distributed in these 3 regions.Q1 to Q8 is distributed in the region of upper left corner W phase, and Q9 to Q16 is distributed in the region of lower left corner W phase; Q17 to Q24 is distributed in the region of middle and upper part V phase, and Q25 to Q32 is distributed in the region of middle and lower part V phase; Q34 to Q41 is distributed in the region of upper right corner U phase, and Q33 and Q42 to Q48 is distributed in the region of lower right corner U phase.In fig. 2, give the current distribution of MOSFET simultaneously, because each phase current trend is consistent, make a concrete analysis of the current trend of W phase here.The current trend of W phase is as shown in left-half in Fig. 2, " B+ " is top layer PCB Copper Foil, it externally connects power positive end, to MOSFET annexation be, the drain electrode of the Q5 to Q12 of W phase connects " B+ " PCB Copper Foil, such electric current has power positive end to flow into the drain electrode of Q5 to Q12, source electrode from Q5 to Q12 flows out, the source electrode of Q5 to Q8 is connected with the drain electrode of Q1 to Q4, the source electrode of Q9 to Q12 is connected with the drain electrode of Q13 to Q16, in the drain electrode of Q1 to Q4 and the drain electrode of Q13 to Q16, one is respectively had externally to connect pad, by outside copper bar, Q1 to Q4 is connected with the drain electrode of Q13 to Q16, such Q1 to Q4 realizes in parallel with the drain electrode of Q13 to Q16, Q1 to Q4 is connected with power supply negative terminal " B-" by bottom PCB Copper Foil with the source electrode of Q13 to Q16, complete electric current and input to by " B+ " current return that " B-" export.In Fig. 2, namely each doab completes the parallel connection of corresponding MOSFET.Fig. 4 is PCB top layer diagram of wiring, the i.e. annexation of corresponding diagram 2.
As shown in Figure 5,1): the grid control signal of three-phase six road MOSFET is inputted this control desk by input terminal 16 by MOSFET control signal, and to control the enablement and disablement time of each MOSFET, the MOSFET of each parallel connection is controlled by same control signal;
2) power supply input and drive singal export: this power model has two power inputs (as 13 in figure and 15) and three drive singal mouths (as the W phase in figure, U phase, V phase), on aluminium base, for these input/output terminal being provided with crimp port that mode connects (as 1 in figure, 2,3,4,5).Power input, adopts circular pad, as shown in Figure 3 " B+ copper post installation position " and " B-copper post installation position ".Mouth is for U phase, and during connection, linked together by the output of copper bar 4 by both sides, output is connected with screw assemblies 2 by copper sheathing 5, and U phase exports and exported by copper post 1, and copper bar 4 is fixedly connected with by holding screw 3 with copper post 1.
3) structure of double-face aluminium substrate is as 7,8,9,10,11 in figure, and double-face aluminium substrate is fixedly connected with radiator 12 by heat-conducting interface material 6.
Utilize technical solutions according to the invention, or those skilled in the art being under the inspiration of technical solution of the present invention, designing similar technical scheme, and reach above-mentioned technique effect, is all fall into protection scope of the present invention.
Claims (4)
1. a MOSFET parallel circuit structure, double-face aluminium substrate adopts 5 Rotating fields: ground floor is top layer Copper Foil, and this one deck is top layer conductive layer; The second layer is FR-4 epoxy plate; Third layer is bottom Copper Foil, and this one deck is bottom conductive layer; 4th layer is the insulating barrier of high thermal conductivity; Layer 5 is aluminium base; It is characterized in that:
The structure of described MOSFET parallel circuit is composed in parallel by Q1 to Q48, wherein the MOSFET of Q1 to Q16 to be the MOSFET of W phase, Q17 to Q32 be V phase, and Q33 to Q48 is the MOSFET of U phase;
The drain electrode of described Q5 to Q12 connects described top layer conductive layer;
The source electrode of Q5 to Q8 is connected with the drain electrode of Q1 to Q4, and the source electrode of Q9 to Q12 is connected with the drain electrode of Q13 to Q16;
Described Q1 to Q4 is connected with the drain electrode of Q13 to Q16;
Described Q1 to Q4 is connected described bottom conductive layer with the source electrode of Q13 to Q16.
2. MOSFET parallel circuit structure according to claim 1, is characterized in that: the pad of MOSFET adopts array via pad.
3. MOSFET parallel circuit structure according to claim 1, it is characterized in that: MOSFET control signal passes through input terminal (16) by the grid control signal input circuit of three-phase six road MOSFET, to control the enablement and disablement time of each MOSFET, the MOSFET of each parallel connection is controlled by same control signal.
4. MOSFET parallel circuit structure according to claim 1, is characterized in that: input/output terminal being provided with crimps the port that mode connects, and adopts via pad, by the connection mode of screw fastening.
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| CN102638190B (en) * | 2012-04-24 | 2014-03-26 | 锦州海伯伦汽车电子有限公司 | Three-phase motor drive power module based on single-side aluminium-based circuit board |
| CN103560682B (en) * | 2013-07-31 | 2016-09-21 | 佟炳然 | A kind of power driven system |
| CN103582408B (en) * | 2013-07-31 | 2017-05-17 | 天津中科华盈科技有限公司 | MOSFET parallel circuit layout |
| CN105375787B (en) * | 2014-08-28 | 2018-10-26 | 株洲南车时代电气股份有限公司 | Modular power terminal plane connecting equipment |
| CN111295035B (en) * | 2018-12-07 | 2023-09-01 | 上海航空电器有限公司 | Metal base PCB high-current SSPC wiring structure |
| CN109728737B (en) * | 2019-01-24 | 2024-03-01 | 浙江动一新能源动力科技股份有限公司 | Brushless motor controller system and assembly method thereof |
| CN110855275B (en) * | 2019-12-02 | 2023-09-29 | 山东元齐新动力科技有限公司 | electronic switch |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3649475A (en) * | 1969-07-22 | 1972-03-14 | Gen Dynamics Corp | Multi-layer printed circuit boards and methods of making same |
| CN2051427U (en) * | 1989-05-29 | 1990-01-17 | 谢保忠 | Metallized-hole-free single face multi-layer printing circuit board |
| CN1237508A (en) * | 1998-05-29 | 1999-12-08 | 三井金属鉱业株式会社 | Resin-coated composite foil, production thereof, and productions of multilayer copper-clad laminate and multilayer printed wiring board using resin-coated composite foil |
| CN1248882A (en) * | 1998-09-18 | 2000-03-29 | 日本电气株式会社 | Multi-layer circuit board for semiconductor chip set unit and making method thereof |
| CN1612677A (en) * | 2003-10-27 | 2005-05-04 | 技嘉科技股份有限公司 | Method formanufacturing multi-layer circuit board |
| CN101211911A (en) * | 2006-12-28 | 2008-07-02 | 松下电器产业株式会社 | Semiconductor integrated circuit |
-
2009
- 2009-09-27 CN CN200910070624.XA patent/CN102029922B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3649475A (en) * | 1969-07-22 | 1972-03-14 | Gen Dynamics Corp | Multi-layer printed circuit boards and methods of making same |
| CN2051427U (en) * | 1989-05-29 | 1990-01-17 | 谢保忠 | Metallized-hole-free single face multi-layer printing circuit board |
| CN1237508A (en) * | 1998-05-29 | 1999-12-08 | 三井金属鉱业株式会社 | Resin-coated composite foil, production thereof, and productions of multilayer copper-clad laminate and multilayer printed wiring board using resin-coated composite foil |
| CN1248882A (en) * | 1998-09-18 | 2000-03-29 | 日本电气株式会社 | Multi-layer circuit board for semiconductor chip set unit and making method thereof |
| CN1612677A (en) * | 2003-10-27 | 2005-05-04 | 技嘉科技股份有限公司 | Method formanufacturing multi-layer circuit board |
| CN101211911A (en) * | 2006-12-28 | 2008-07-02 | 松下电器产业株式会社 | Semiconductor integrated circuit |
Non-Patent Citations (1)
| Title |
|---|
| 集成电力电子模块封装技术的研究;王建冈;《中国博士学位论文全文库》;20080702;正文第27-28，33-40页 * |
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