CN208835986U - A kind of power device of generic encapsulation - Google Patents
A kind of power device of generic encapsulation Download PDFInfo
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- CN208835986U CN208835986U CN201821524345.7U CN201821524345U CN208835986U CN 208835986 U CN208835986 U CN 208835986U CN 201821524345 U CN201821524345 U CN 201821524345U CN 208835986 U CN208835986 U CN 208835986U
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Abstract
A kind of power device of generic encapsulation, comprising: thin-film capacitor, IGBT mould group, radiating subassembly, drive control component and barricade；Thin-film capacitor and/or IGBT mould group use generic encapsulation, and the size of the shape of thin-film capacitor and/or IGBT mould group is preset value；The size of the shape of corresponding radiating subassembly, drive control component and barricade is preset value；The film fuse connection position of multiple parallel connections is provided in thin-film capacitor, the quantity or size according to power device power output numerical value setting film fuse；Multiple chip dies connection positions are provided in IGBT mould group, the quantity or size according to power device power output numerical value setting chip dies.By using generic encapsulation, using universal standard component, design iterations can be avoided, improve versatility, reduce design cost and production cost for different power output requirements；Meanwhile by using modularized design, power density is improved, reduces the risk, difficulty and period of exploitation.
Description
Technical field
The utility model relates to electric vehicle controller fields, the in particular to power device of generic encapsulation.
Background technique
Orthodox car using petroleum as fuel, although with the continuous improvement of production technology and environmental protection standard, separate unit automobile
Exhaust emissions amount is lower and lower, but with the progress of social development levels, auto industry flourishes, orthodox car ownership
Rapidly increase, huge radix causes the pollution increasingly weighed to air, and automobile exhaust pollution has arrived improvement
Stage.Therefore, new-energy automobile is increasingly subject to the concern of society with its zero emission, zero pollution, and country is also as automobile
Industrial expansion direction is helped.Currently, new-energy automobile development level speed is getting faster, obtained public approval and
It supports, new-energy automobile sales volume increases substantially.
New energy hybrid vehicle/pure electric automobile power electronic controller PEU, core component be IGBT mould group (or
MOSFET mould group), drive control circuit and thin-film capacitor etc..With the development of technology, higher and higher to power density requirements, core
The integrated level and performance requirement of center portion part are higher and higher.The function of power electronic controller PEU is complicated, product design and development difficulty
Greatly, the period is long, risk is high.There are the following problems with production for current power electronic controller PEU design:
1. for power electronic controller PEU, the IGBT mould group (or MOSFET mould group) or thin-film capacitor of different capacity
Kernel size and number it is different, consider the cost of electronic device, generally require to redesign electronic device and encapsulation, lead
Other all components of power electronic controller PEU are caused to be also required to redesign, matched new energy hybrid vehicle/
Pure electric automobile associated components are also required to be modified accordingly, reduce the versatility between like products different model, pole
Big increases design cost and production cost；
2. for extra heavy power electronic controller PEU, the parallel IGBT mould group that need to use (or MOSFET mould
Group), integrated difficulty is big, and design is complicated.
Utility model content
The purpose of the utility model embodiment is to provide a kind of power device of generic encapsulation, by thin-film capacitor and/
Or IGBT mould group uses generic encapsulation, makes power electronic controller PEU can be for different power output requirements, using general
Standarized component avoids and redesigns again to power electronic controller PEU because of output power variation, improves the logical of product
With property, the design cost and production cost of power electronic controller PEU are greatly reduced；By using modular IGBT mould
Group, thin-film capacitor, drive control circuit, radiating subassembly, current detection component and barricade, improve power electronic controller
The power density of PEU effectively reduces risk, difficulty and the period of power electronic controller PEU exploitation.In addition, power device
Integrated form package arrangements have flexible direct current input interface, AC output interface, control circuit signaling interface and cooling medium
Access interface allows power device to be flexibly applied to various electric drive configurations field in different power electronic controller PEU
Institute.
In order to solve the above technical problems, the utility model embodiment provides a kind of power device of generic encapsulation, comprising:
Thin-film capacitor, IGBT mould group, radiating subassembly, drive control component and barricade；The thin-film capacitor and/or IGBT mould group use
The size of the shape of generic encapsulation, the thin-film capacitor and/or IGBT mould group is preset value；With the thin-film capacitor and/or
The size of the shape of the radiating subassembly, drive control component and barricade that IGBT mould group is applied in combination is preset value；It is described
The film fuse connection position of multiple parallel connections is provided in thin-film capacitor, according to described in power device power output numerical value setting
The quantity or size of film fuse；Multiple chip dies connection positions are provided in the IGBT mould group, according to the power device
Power output numerical value sets the quantity or size of the chip dies.
Further, the IGBT mould group is set to the top of the radiating subassembly, and fixes and connect with the radiating subassembly
It connects；The radiating subassembly and IGBT mould group are all set in the side of the thin-film capacitor；The thin-film capacitor respectively with it is described
IGBT mould group is connected with radiating subassembly.
Further, the side of the thin-film capacitor is provided with output copper bar, is provided at least one on the output copper bar
A first output port；The IGBT mould group side is provided at least one second input port, the other side be provided with it is described
The one-to-one second output terminal mouth of second input port；First output port and the second input port, which correspond, to be connected
It connects.
Further, the IGBT mould group includes three IGBT modules, and the opposite two sides of the IGBT module are respectively set
There are the second input port and second output terminal mouth, the first output port company of second input port and the thin-film capacitor
It connects；Second input port is respectively positioned on the side of the IGBT mould group, and the second output terminal mouth is respectively positioned on the IGBT mould
The side opposite with second input port side in group.
Further, first output port is the first lamination terminal, and the first lamination terminal is including being sheet
First positive terminal of structure and the first negative terminal being set to above first positive terminal；First positive terminal
The length of horizontal direction is longer than the length of the first negative terminal horizontal direction；First positive terminal and the first negative pole end
Son is overlapped in vertical direction, and first positive terminal and the first negative terminal are connected by insulating trip；Described second is defeated
Inbound port is the second lamination terminal being used cooperatively with the first lamination terminal, and the second lamination terminal is including being sheet
Second positive terminal of structure and the second negative terminal being set to below second positive terminal, second positive terminal
It is identical as the sum of the length of second negative terminal and the first negative terminal as the sum of the length of the first positive terminal, described
Two positive terminals and the second negative terminal it is of same size, second positive terminal and the second negative terminal pass through insulating trip and connect
It connects.
Further, first positive terminal is provided with first through hole far from the side of the thin-film capacitor, and described
One negative terminal is provided with the arc notch to match with first through hole circumference far from the side of the thin-film capacitor；Described second
Negative terminal is provided with the second through-hole identical with first through hole aperture, second anode far from the side of the IGBT mould group
Terminal is provided with the arc notch to match with the second through-hole circumference far from the side of the IGBT mould group；Described first is logical
Screw is provided in hole and the second through-hole, the screw passes through insulation tabletting and the first lamination terminal and the second lamination terminal
Insulation connection, the screw bottom is threadedly coupled with predeterminated position.
Further, first negative terminal and the second negative terminal bottom are provided with collets, first cathode
Terminal and the second negative terminal are connected by the collets and predeterminated position insulation.
Further, the lower surface of the radiating subassembly bottom is fixedly connected with the upper surface of the IGBT die set top,
To realize heat transfer with the IGBT mould group.
Further, the radiating subassembly top is provided with the cooling medium access of rectangular recess shape, the radiating subassembly
The opposite two sides in bottom are provided with cooling medium entrance and cooling medium outlet, cooling medium access one end and the cooling
Medium inlet connection, the other end and the cooling medium outlet.
Further, the edge of rectangular recess is provided with sealed colloid at the top of the radiating subassembly；And/or it is described cold
But medium inlet and cooling medium outlet edge are provided with sealed colloid.
Further, the sealed colloid is bi-component or multicomponent chemical compound body.
Further, the sealed colloid is molding silicone rubber elastomer.
Further, the barricade is set to the top of the IGBT mould group and the thin-film capacitor, and respectively with institute
Thin-film capacitor is stated to be fixedly connected with radiating subassembly.
Further, the drive control component is set between the IGBT mould group and the barricade, and described
IGBT mould group electrical connection, to control the output power of the IGBT mould group.
Further, the drive control component includes: second circuit board and the drive that is set on the second circuit board
Dynamic circuit module and control circuit module；The second circuit board is fixedly installed on the top of the IGBT mould group, and with it is described
The electrical connection of IGBT mould group.
Further, the drive control component includes: second circuit board, tertiary circuit plate, drive circuit module and control
Circuit module processed；The drive circuit module is set on the second circuit board；The control circuit module is set to described
On tertiary circuit plate；The second circuit board is fixedly installed between the IGBT mould group and the barricade, and with it is described
The electrical connection of IGBT mould group；The tertiary circuit plate is fixedly installed on above the barricade, and is electrically connected with the IGBT mould group.
Further, several the first heat-sink units are provided on the output copper bar of the thin-film capacitor；The heat dissipation group
Part includes radiator and several second heat-sink units for being set to the radiator side；First heat-sink unit and second
Heat-sink unit corresponds and heat conductive insulating connects.
Further, first heat-sink unit includes the first pin, and second heat-sink unit includes second pin, institute
It states the first pin and second pin corresponds；The upper surface of the second pin passes through the first heat conductive isolation sheet and the first pin
Lower surface connection；The barricade bottom, which is provided with, pre-tightens column, institute with one-to-one several of first heat-sink unit
The bottom for stating preload column is connect by the second heat conductive isolation sheet with the upper surface of first pin.
Further, several described first pins include the spaced first positive pin and the first negative pin,
Described first positive pin is connect with the anode of the output copper bar, the cathode of first negative pin and the output copper bar
Connection.
Further, the power device further include: the current detecting being set between the IGBT mould group and barricade
Component；The current detection component includes: first circuit board, insulate the magnetic gathering features being fixedly connected with the first circuit board
With the magnetic signal detection chip being electrically connected with the first circuit board, the first circuit board and the fixed company of the IGBT mould group
It connects；The magnetic gathering features are cyclic structure jaggy, and the magnetic signal detection chip is set to the magnetic gathering features
In the notch of cyclic structure.
Further, the second output terminal mouth is provided with second output terminal, and the second output terminal minor structure is edge
The column or tubbiness of vertical direction setting, the magnetic gathering features are sheathed on second output terminal.
Further, the cross section of second output terminal is round, polygon or annular.
The above-mentioned technical proposal of the utility model embodiment has following beneficial technical effect:
1. be directed to power electronic controller PEU can by using generic encapsulation to thin-film capacitor and/or IGBT mould group
Different power output requirements is avoided due to output power variation using general standarized component to power electronic controller
PEU carry out design iterations, improve the versatility of product, greatly reduce power electronic controller PEU design cost and
Production cost.
2. by using modular IGBT mould group, thin-film capacitor, drive control circuit, radiating subassembly, current detecting group
Part and barricade improve the power density of power electronic controller PEU, effectively reduce power electronic controller PEU exploitation
Risk, difficulty and period.
3. the integrated form package arrangements of power device have flexible direct current input interface, AC output interface, control circuit
Signaling interface and cooling medium access interface fit power device flexibly in different power electronic controller PEU
Place is configured for various electric drives.
Detailed description of the invention
Fig. 1 a is the big output power generic encapsulation schematic diagram of power module provided by the embodiment of the utility model；
Fig. 1 b is the small output power generic encapsulation schematic diagram of power module provided by the embodiment of the utility model；
Fig. 2 is the isometric front view of power module provided by the embodiment of the utility model；
Fig. 3 is the reverse side perspective view of power module provided by the embodiment of the utility model；
Fig. 4 is the Structure explosion diagram of power module provided by the embodiment of the utility model；
Fig. 5 is IGBT mould group stereoscopic schematic diagram provided by the embodiment of the utility model；
Fig. 6 is thin-film capacitor, radiating subassembly and IGBT mould group connection schematic diagram provided by the embodiment of the utility model；
Fig. 7 is thin-film capacitor and IGBT mould group connection terminal schematic diagram provided by the embodiment of the utility model；
Fig. 8 is thin-film capacitor stereoscopic schematic diagram provided by the embodiment of the utility model；
Fig. 9 is radiating subassembly positive stereoscopic diagram provided by the embodiment of the utility model；
Figure 10 is radiating subassembly reverse side stereoscopic schematic diagram provided by the embodiment of the utility model；
Figure 11 is thin-film capacitor and radiating subassembly provided by the embodiment of the utility model connecting pin heat transfer schematic diagram；
Figure 12 is current detection component structural schematic diagram provided by the embodiment of the utility model.
In attached drawing:
1, thin-film capacitor, 11, film fuse, 12, output copper bar, the 13, first output port, the 131, first positive terminal,
1311, first through hole, the 132, first negative terminal, the 14, first heat-sink unit, the 141, first pin, the 1411, first anode draw
Foot, the 1412, first negative pin, 2, IGBT mould group, 21, chip dies, the 22, second input port, the 221, second positive terminal
Son, the 222, second negative terminal, the 2221, second through-hole, 23, second output terminal mouth, 231, second output terminal, 3, heat dissipation group
Part, 31, radiator, 311, cooling medium entrance, 312, cooling medium outlet, the 32, second heat-sink unit, 321, second pin,
4, drive control component, 41, second circuit board, 42, tertiary circuit plate, 5, barricade, 51, preload column, 6, current detection component,
61, first circuit board, 62, magnetic gathering features, 63, magnetic signal detection chip, the 71, first heat conductive isolation sheet, 72, second is thermally conductive exhausted
Embolium, 73, screw, 74, insulation tabletting, 75, collets.
Specific embodiment
To make the objectives, technical solutions and advantages of the present invention clearer, With reference to embodiment
And referring to attached drawing, the utility model is further described.It should be understood that these descriptions are merely illustrative, and do not really want
Limit the scope of the utility model.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to avoid not
Necessarily obscure the concept of the utility model.
Fig. 1 a is the big output power generic encapsulation schematic diagram of power module provided by the embodiment of the utility model.
Fig. 1 b is the small output power generic encapsulation schematic diagram of power module provided by the embodiment of the utility model.
Fig. 2 is the isometric front view of power module provided by the embodiment of the utility model.
Fig. 3 is the reverse side perspective view of power module provided by the embodiment of the utility model.
Fig. 4 is the Structure explosion diagram of power module provided by the embodiment of the utility model.
Please refer to Fig. 1 a, Fig. 1 b, Fig. 2, Fig. 3 and Fig. 4, a kind of power device of generic encapsulation, comprising: thin-film capacitor 1,
IGBT mould group 2, radiating subassembly 3, drive control component 4 and barricade 5.Thin-film capacitor 1 and/or IGBT mould group 2 use general envelope
The size of the shape of dress, thin-film capacitor 1 and/or IGBT mould group 2 is preset value.It is combined with thin-film capacitor 1 and/or IGBT mould group 2
The size of the shape of the radiating subassembly 3, drive control component 4 and barricade 5 that use is preset value.It is provided in thin-film capacitor 1
11 connection position of film fuse of multiple parallel connections, the quantity or big of foundation power device power output numerical value setting film fuse 11
It is small.It is provided with multiple 21 connection positions of chip dies in IGBT mould group 2, sets chip dies according to power device power output numerical value
21 quantity or size.
As illustrated in figs. 1A and ib, power device is directed to different output powers, using identical modularized design.Pass through
Generic encapsulation is used to thin-film capacitor and/or IGBT mould group, power electronic controller PEU can for different power outputs
It asks, using general standarized component, avoids and design iterations are carried out to power electronic controller PEU because of output power variation,
The versatility for improving product greatly reduces the design cost and production cost of power electronic controller PEU.
IGBT mould group 2 is set to the top of radiating subassembly 3, and is fixedly connected with radiating subassembly 3.Radiating subassembly 3 and IGBT
Mould group 2 is all set in the side of thin-film capacitor 1.Thin-film capacitor 1 is connect with IGBT mould group 2 and radiating subassembly 3 respectively.
Fig. 5 is IGBT mould group stereoscopic schematic diagram provided by the embodiment of the utility model.
Fig. 6 is thin-film capacitor, radiating subassembly and IGBT mould group connection schematic diagram provided by the embodiment of the utility model.
Fig. 7 is thin-film capacitor and IGBT mould group connection terminal schematic diagram provided by the embodiment of the utility model.
Fig. 8 is thin-film capacitor stereoscopic schematic diagram provided by the embodiment of the utility model.
Referring to figure 5., Fig. 6 and Fig. 7, the side of thin-film capacitor 1 are provided with output copper bar 12, export and be provided on copper bar 12
At least one first output port 13；2 side of IGBT mould group is provided at least one second input port 22, and the other side is provided with
With the one-to-one second output terminal mouth 23 of the second input port 22；First output port 13 and the second input port 22 1 are a pair of
It should connect.
IGBT mould group 2 includes three IGBT modules, and the opposite two sides of IGBT module are respectively arranged with the second input port 22
With second output terminal mouth 23, the second input port 22 is connect with the first output port 13 of thin-film capacitor 1；Second input port 22
It is respectively positioned on the side of IGBT mould group 2, second output terminal mouth 23 is respectively positioned on opposite with 22 side of the second input port in IGBT mould group 2
Side.
First output port 13 is the first lamination terminal, and the first lamination terminal includes the first positive terminal for being laminated structure
Son 1341 and the first negative terminal 132 for being set to 131 top of the first positive terminal；First positive terminal, 131 horizontal direction
Length is longer than the length of 132 horizontal direction of the first negative terminal；First positive terminal 131 and the first negative terminal 132 are vertical
Direction overlaps, and the first positive terminal 131 is connected with the first negative terminal 132 by insulating trip；Second input port 22 is
The second lamination terminal being used cooperatively with the first lamination terminal, the second lamination terminal include the second positive terminal for being laminated structure
Son 221 and the second negative terminal 222 for being set to 221 lower section of the second positive terminal, the second positive terminal 221 and the first anode
The sum of length of terminal 131 is identical as the sum of the length of the second negative terminal 222 and the first negative terminal 132, the second positive terminal
Son 221 and the second negative terminal 222 it is of same size, the second positive terminal 221 and the second negative terminal 222 pass through insulating trip company
It connects.First lamination terminal and the second lamination terminal use stack bus bar, compared to traditional copper bar terminal, the faying surface of stack bus bar
Product is big, and current loop area is small, and the spike during stray inductance, electromagnetic interference influence and IGBT module switch can be obviously reduced
Voltage.
First positive terminal 131 is provided with first through hole 1311, the first negative terminal 132 far from the side of thin-film capacitor 1
Side far from thin-film capacitor 1 is provided with the arc notch to match with 1311 circumference of first through hole；Second negative terminal 222 is remote
Side from IGBT mould group 2 is provided with the second through-hole 2221 identical with 1311 aperture of first through hole, and the second positive terminal 221 is remote
Side from IGBT mould group 2 is provided with the arc notch to match with 2221 circumference of the second through-hole；First through hole 1311 and second
Screw 73 is provided in through-hole 2221, screw 73 is connected by insulation tabletting 74 and the first lamination terminal and the second lamination terminal insulative
It connects, 73 bottom of screw is threadedly coupled with predeterminated position.By will connect with the first lamination terminal and the second lamination terminal insulative
Screw 73 is fixed on predeterminated position, and the first lamination terminal and the second lamination terminal are connected firmly, it is ensured that electric property is stablized, Du
Absolutely because the performance that circuit virtual connection or disconnect influences power electronic controller PEU is stablized, the safety coefficient of driving is improved.
First negative terminal 132 and 222 bottom of the second negative terminal are provided with collets 75,132 He of the first negative terminal
Second negative terminal 222 is connected by collets 75 and predeterminated position insulation.Collets 75 realize 132 He of the first negative terminal
Second negative terminal, 222 bottom and for the insulation between the predeterminated position of fixing screws 73, avoids the first negative terminal 132
And second be electrically connected between negative terminal 222 and car body, improves safety coefficient.In addition, collets 75 are also folded to first
Layer terminal and the second lamination terminal link position provide support, improve the stabilization of the two connection structure.
Fig. 9 is radiating subassembly positive stereoscopic diagram provided by the embodiment of the utility model.
Figure 10 is radiating subassembly reverse side stereoscopic schematic diagram provided by the embodiment of the utility model.
Fig. 9 and Figure 10 are please referred to, the lower surface of 3 bottom of radiating subassembly is fixedly connected with the upper surface at 2 top of IGBT mould group,
To realize heat transfer with IGBT mould group 2.
3 top of radiating subassembly is provided with the cooling medium access of rectangular recess shape, and the opposite two sides in 3 bottom of radiating subassembly are set
It is equipped with cooling medium entrance 311 and cooling medium outlet 312, cooling medium access one end is connected to cooling medium entrance 311, separately
One end is connected to cooling medium outlet 312.
3 top of radiating subassembly is provided with sealed colloid, the edge dispenser point of rectangular recess along the edge of rectangular recess
Sealed colloid is applied, particular cross section size is formed, at certain size after solidification.After IGBT mould group is connect with radiator, screw is used
IGBT mould group and radiator are compressed, preforming cured glue surface is compressed and guarantees sealing effect.
Cooling medium entrance 311 and cooling medium export 312 edges and are provided with sealed colloid, 311 He of cooling medium entrance
Cooling medium exports 312 edges dispenser spot printing sealed colloid, connect with vehicle-mounted cooling water channel, and compressed with screw,
Ensure sealing effect, avoid in the prior art install rubber ring during it is easy to fall off cause rubber ring damage or use wet glue institute
The problems such as bring curing time is long.
Optionally, sealed colloid is bi-component or multicomponent chemical compound body, it is preferred that sealed colloid is molding silicone rubber
Elastomer.
Referring to figure 4., in an embodiment of the utility model embodiment, drive control component 4 is set to IGBT
It between mould group 2 and barricade 5, is electrically connected with IGBT mould group 2, to control the output power of IGBT mould group 2.
In the another embodiment of the utility model embodiment, drive control component 4 include: second circuit board 41,
Tertiary circuit plate 42, drive circuit module and control circuit module；Drive circuit module is set on second circuit board 41；Control
Circuit module is set on tertiary circuit plate 42；Second circuit board 41 is fixedly installed between IGBT mould group 2 and barricade 5, and
It is electrically connected with IGBT mould group 2；Tertiary circuit plate 42 is fixedly installed on 5 top of barricade, and is electrically connected with IGBT mould group 2.
Barricade 5 is set to the top of IGBT mould group 2 and thin-film capacitor 1, and respectively with thin-film capacitor 1 and radiating subassembly 3
It is fixedly connected.
Figure 11 is thin-film capacitor and radiating subassembly provided by the embodiment of the utility model connecting pin heat transfer schematic diagram.
Fig. 8 and Figure 11 are please referred to, several first heat-sink units 14 are provided on the output copper bar 12 of thin-film capacitor 1；It dissipates
Hot component 3 includes radiator 31 and several second heat-sink units 32 for being set to 31 side of radiator；First heat-sink unit 14
It is corresponded with the second heat-sink unit 32 and heat conductive insulating is connect.Pass through the company of the first heat-sink unit 14 and the second heat-sink unit 32
It connects, IGBT mould group 2 conducts the heat to heat and thin-film capacitor 1 itself generation of thin-film capacitor 1 by heat loss through conduction component 3
In, the temperature of thin-film capacitor 1 is reduced, performance and the service life of thin-film capacitor 1 are improved.
First heat-sink unit 14 includes the first pin 141, and the second heat-sink unit 32 includes second pin 321, the first pin
141 correspond with second pin 321；The upper surface of second pin 321 passes through the first heat conductive isolation sheet 71 and the first pin 141
Lower surface connection；5 bottom of barricade, which is provided with, pre-tightens column 51 with one-to-one several of the first heat-sink unit 14, pre-tightens column
51 bottom is connect by the second heat conductive isolation sheet 72 with the upper surface of the first pin 141.Pre-tighten column 51 and second pin 321
It is connect respectively by insulating materials and the first pin 141 realization insulating heat-conductive, and from the upper surface of the first pin 141 and following table
Face realizes the connection with the first pin 141, it is ensured that the first pin 141 is connected with 321 effective of second pin, is avoided
Because shake or hit cause heat transfer connecting component occur loosen or position offset due to cause heat-sinking capability reduce or can not be real
Existing heat sinking function, improves the stability of radiator structure.
Several first pins 141 include the spaced first positive pin 1411 and the first negative pin 1412, the
One positive pin 1411 is connect with the anode of output copper bar 12, and the first negative pin 1412 is connect with the cathode of output copper bar 12.
Respectively with the anode of the output copper bar 12 of thin-film capacitor 1 and the first pin 141 for connecting of cathode, pass through the with radiating subassembly 3
The connection of two pins 321 realizes the anode of the output copper bar 12 to thin-film capacitor 1 and cathode while cooling down, improves to film
Capacitor 1 itself generates the heat dissipation effect of heat, improves the performance of thin-film capacitor 1.
Figure 12 is current detection component structural schematic diagram provided by the embodiment of the utility model.
This power device further include: the current detection component 6 being set between IGBT mould group 2 and barricade 5；Current detecting
Component 6 includes: first circuit board 61, insulate the magnetic gathering features 62 and and first circuit board being fixedly connected with first circuit board 61
The magnetic signal detection chip 63 of 61 electrical connections, first circuit board 61 are fixedly connected with IGBT mould group 2；Magnetic gathering features 62 are scarce to have
The cyclic structure of mouth, magnetic signal detection chip 63 are set in the notch of the cyclic structure of magnetic gathering features 62.
Second output terminal mouth 23 is provided with second output terminal 231, and second output terminal 231 structures of son are to set along the vertical direction
The column or tubbiness set, magnetic gathering features 62 are sheathed on second output terminal 231.
By setting up cylindric output conductor in the ac output end of IGBT mould group 2, using magnetic gathering features 62 to IGBT
Mould group 2 exports curent change bring changes of magnetic field and is detected, by magnetic signal detection chip 63 to the changing value of magnetic signal into
Row calculates, and extrapolates the three-phase alternating current output current value of IGBT mould group.In addition, passing through integrated vertical current detection component
6, the horizontal space of power device is saved, space utilization rate is increased, improves power density.
Optionally, the cross section of second output terminal 231 is round, polygon or annular；Preferably, second output terminal
231 cross section is circle.
In conclusion the utility model is intended to protect a kind of power device of generic encapsulation, comprising: thin-film capacitor, IGBT
Mould group, radiating subassembly, drive control component and barricade；The thin-film capacitor and/or IGBT mould group use generic encapsulation, institute
The size for stating the shape of thin-film capacitor and/or IGBT mould group is preset value；Combining with the thin-film capacitor and/or IGBT mould group makes
The size of the shape of the radiating subassembly, drive control component and barricade is preset value；Setting in the thin-film capacitor
There is the film fuse connection position of multiple parallel connections, the quantity of the film fuse is set according to the power device power output numerical value
Or size；It is provided with multiple chip dies connection positions in the IGBT mould group, is set according to the power device power output numerical value
The quantity or size of the fixed chip dies.The above-mentioned technical proposal of the utility model has following effect:
1. be directed to power electronic controller PEU can by using generic encapsulation to thin-film capacitor and/or IGBT mould group
Different power output requirements is avoided due to output power variation using general standarized component to power electronic controller
PEU carry out design iterations, improve the versatility of product, greatly reduce power electronic controller PEU design cost and
Production cost.
2. by using modular IGBT mould group, thin-film capacitor, drive control circuit, radiating subassembly, current detecting group
Part and barricade improve the power density of power electronic controller PEU, effectively reduce power electronic controller PEU exploitation
Risk, difficulty and period.
3. the integrated form package arrangements of power device have flexible direct current input interface, AC output interface, control circuit
Signaling interface and cooling medium access interface fit power device flexibly in different power electronic controller PEU
Place is configured for various electric drives.
It should be understood that the above-mentioned specific embodiment of the utility model is used only for exemplary illustration or explains this reality
With novel principle, without constituting limitations of the present invention.Therefore, in the spirit and scope without departing from the utility model
In the case of any modification, equivalent substitution, improvement and etc. done, should be included within the scope of protection of this utility model.In addition,
The appended claims for the utility model are intended to cover to fall into attached claim scope and boundary or this range and boundary
Whole change and modification in equivalent form.
Claims (22)
1. a kind of power device of generic encapsulation characterized by comprising thin-film capacitor (1), IGBT mould group (2), radiating subassembly
(3), drive control component (4) and barricade (5)；
The thin-film capacitor (1) and/or the IGBT mould group (2) use generic encapsulation, the thin-film capacitor (1) and/or described
The size of the shape of IGBT mould group (2) is preset value；
The radiating subassembly (3) that is applied in combination with the thin-film capacitor (1) and/or the IGBT mould group (2), driving control
The size of the shape of component (4) processed and the barricade (5) is preset value；
Film fuse (11) connection position of multiple parallel connections, the function according to the power device are provided in the thin-film capacitor (1)
Rate output numerical value sets the quantity or size of the film fuse (11)；
Multiple chip dies (21) connection position, the power output according to the power device are provided in the IGBT mould group (2)
Numerical value sets the quantity or size of the chip dies (21).
2. power device according to claim 1, which is characterized in that
The IGBT mould group (2) is set to the top of the radiating subassembly (3), and is fixedly connected with the radiating subassembly (3)；
The radiating subassembly (3) and IGBT mould group (2) are all set in the side of the thin-film capacitor (1)；
The thin-film capacitor (1) connect with the IGBT mould group (2) and radiating subassembly (3) respectively.
3. power device according to claim 1, which is characterized in that
The side of the thin-film capacitor (1) is provided with output copper bar (12), is provided at least one on the output copper bar (12)
First output port (13)；
IGBT mould group (2) side is provided at least one second input port (22), and the other side is provided with and described second
The one-to-one second output terminal mouth (23) of input port (22)；
First output port (13) connects one to one with the second input port (22).
4. power device according to claim 1, which is characterized in that
The IGBT mould group (2) includes one or more IGBT modules, and the opposite two sides of the IGBT module are respectively arranged with the
Two input ports (22) and second output terminal mouth (23)；
Second input port (22) is respectively positioned on the side of the IGBT mould group (2), the equal position of the second output terminal mouth (23)
In side opposite with the second input port (22) side on the IGBT mould group (2).
5. power device according to claim 3, which is characterized in that
First output port (13) is the first lamination terminal, and the first lamination terminal includes be laminated structure first
Positive terminal (1341) and the first negative terminal (132) being set to above first positive terminal (131)；Described first just
The length of extreme son (131) horizontal direction is longer than the length of the first negative terminal (132) horizontal direction；First anode
Terminal (131) and the first negative terminal (132) are overlapped in vertical direction, first positive terminal (131) and first negative
Extreme son (132) is connected by insulating trip；
Second input port (22) is the second lamination terminal being used cooperatively with the first lamination terminal, and described second is folded
Layer terminal includes being the second positive terminal (221) of laminated structure and being set to below second positive terminal (221)
Second negative terminal (222), the sum of length of second positive terminal (221) and the first positive terminal (131) and described the
The sum of the length of two negative terminals (222) and the first negative terminal (132) is identical, second positive terminal (221) and second
Negative terminal (222) it is of same size, second positive terminal (221) and the second negative terminal (222) pass through insulating trip and connect
It connects.
6. power device according to claim 5, which is characterized in that
First positive terminal (131) is provided with first through hole (1311) far from the side of the thin-film capacitor (1), and described the
One negative terminal (132) is provided with the arc to match with first through hole (1311) circumference far from the side of the thin-film capacitor (1)
V notch v；
Second negative terminal (222) is provided with and first through hole (1311) aperture far from the side of the IGBT mould group (2)
Identical second through-hole (2221), second positive terminal (221) is provided with far from the side of the IGBT mould group (2) and institute
State the arc notch that the second through-hole (2221) circumference matches；
It is provided with screw (73) in the first through hole (1311) and second through-hole (2221), the screw (73) passes through exhausted
Edge tabletting (74) is connect with the first lamination terminal and the second lamination terminal insulative.
7. power device according to claim 6, which is characterized in that
First negative terminal (132) and the second negative terminal (222) bottom are provided with collets (75), first cathode
Terminal (132) and the second negative terminal (222) are connected by the collets (75) and predeterminated position insulation.
8. power device according to claim 2, which is characterized in that
The lower surface of radiating subassembly (3) bottom is fixedly connected with the upper surface at the top of the IGBT mould group (2), with it is described
IGBT mould group (2) realizes heat transfer.
9. power device according to claim 8, which is characterized in that
Radiating subassembly (3) top is provided with the cooling medium access of rectangular recess shape, and radiating subassembly (3) bottom is opposite
Two sides be provided with cooling medium entrance (311) and cooling medium outlet (312), cooling medium access one end with it is described cold
But medium inlet (311) are connected to, and the other end exports (312) with the cooling medium and is connected to.
10. power device according to claim 9, which is characterized in that
The edge of rectangular recess is provided with sealed colloid at the top of the radiating subassembly (3)；And/or
The cooling medium entrance (311) and cooling medium outlet (312) edge are provided with sealed colloid.
11. power device according to claim 10, which is characterized in that
The sealed colloid is bi-component or multicomponent chemical compound body.
12. power device according to claim 11, which is characterized in that
The sealed colloid is molding silicone rubber elastomer.
13. power device according to claim 1, which is characterized in that
The barricade (5) is set to the top of the IGBT mould group (2) and the thin-film capacitor (1), and respectively with it is described thin
Membrane capacitance (1) is fixedly connected with radiating subassembly (3).
14. power device according to claim 1, which is characterized in that
The drive control component (4) is set between the IGBT mould group (2) and the barricade (5), with the IGBT mould
Group (2) electrical connection, to control the output power of the IGBT mould group (2).
15. power device according to claim 14, which is characterized in that
The drive control component (4) includes: second circuit board (41) and the driving that is set on the second circuit board (41)
Circuit module and control circuit module；
The second circuit board (41) is fixedly installed on the top of the IGBT mould group (2), and is electrically connected with the IGBT mould group (2)
It connects.
16. power device according to claim 14, which is characterized in that
The drive control component (4) includes: second circuit board (41), tertiary circuit plate (42), drive circuit module and control
Circuit module；
The drive circuit module is set on the second circuit board (41)；
The control circuit module is set on the tertiary circuit plate (42)；
The second circuit board (41) is fixedly installed between the IGBT mould group (2) and the barricade (5), and with it is described
IGBT mould group (2) electrical connection；
The tertiary circuit plate (42) is fixedly installed on above the barricade (5), and is electrically connected with the IGBT mould group (2).
17. power device according to claim 1, which is characterized in that
Several first heat-sink units (14) are provided on the output copper bar (12) of the thin-film capacitor (1)；
The radiating subassembly (3) includes radiator (31) and several the second heat dissipation lists for being set to the radiator (31) side
First (32)；
First heat-sink unit (14) corresponds with the second heat-sink unit (32) and heat conductive insulating is connect.
18. power device according to claim 17, which is characterized in that
First heat-sink unit (14) includes the first pin (141), and second heat-sink unit (32) includes second pin
(321), first pin (141) and second pin (321) correspond；
The upper surface of the second pin (321) passes through the following table of the first heat conductive isolation sheet (71) and first pin (141)
Face connection；
Barricade (5) bottom, which is provided with, pre-tightens column (51) with one-to-one several of first heat-sink unit (14),
The bottom for pre-tightening column (51) is connect by the second heat conductive isolation sheet (72) with the upper surface of first pin (141).
19. power device according to claim 18, which is characterized in that
Several described first pins (141) include the spaced first positive pin (1411) and the first negative pin
(1412), the described first positive pin (1411) connect with the anode of output copper bar (12), first negative pin
(1412) it is connect with the cathode of output copper bar (12).
20. power device according to claim 1, which is characterized in that further include: be set to the IGBT mould group (2) and
Current detection component (6) between barricade (5)；
The current detection component (6) includes: first circuit board (61), insulating with the first circuit board (61) is fixedly connected
Magnetic gathering features (62) and the magnetic signal detection chip (63) being electrically connected with the first circuit board (61), the first circuit board
(61) it is fixedly connected with the IGBT mould group (2)；
The magnetic gathering features (62) are cyclic structure jaggy, and it is poly- that the magnetic signal detection chip (63) is set to the magnetic
Hold together in the notch of the cyclic structure of component (62).
21. power device according to claim 20, which is characterized in that
The second output terminal mouth (23) of the IGBT mould group (2) is provided with second output terminal (231), second output terminal
(231) structure is the column being arranged along the vertical direction or tubbiness, and the magnetic gathering features (62) are sheathed on the second output terminal
On sub (231).
22. power device according to claim 21, which is characterized in that
The cross section of the second output terminal sub (231) is round, polygon or annular.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821524345.7U CN208835986U (en) | 2018-09-18 | 2018-09-18 | A kind of power device of generic encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821524345.7U CN208835986U (en) | 2018-09-18 | 2018-09-18 | A kind of power device of generic encapsulation |
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| Publication Number | Publication Date |
|---|---|
| CN208835986U true CN208835986U (en) | 2019-05-07 |
Family
ID=66313754
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201821524345.7U Active CN208835986U (en) | 2018-09-18 | 2018-09-18 | A kind of power device of generic encapsulation |
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| Country | Link |
|---|---|
| CN (1) | CN208835986U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109217636A (en) * | 2018-09-18 | 2019-01-15 | 上海蔚来汽车有限公司 | A kind of power device of generic encapsulation |
| CN111800986A (en) * | 2020-05-25 | 2020-10-20 | 中国第一汽车股份有限公司 | Motor controller based on discrete device |
-
2018
- 2018-09-18 CN CN201821524345.7U patent/CN208835986U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109217636A (en) * | 2018-09-18 | 2019-01-15 | 上海蔚来汽车有限公司 | A kind of power device of generic encapsulation |
| CN109217636B (en) * | 2018-09-18 | 2024-02-02 | 上海蔚来汽车有限公司 | Universal packaged power device |
| CN111800986A (en) * | 2020-05-25 | 2020-10-20 | 中国第一汽车股份有限公司 | Motor controller based on discrete device |
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