CN103560682B - A kind of power driven system - Google Patents
A kind of power driven system Download PDFInfo
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- CN103560682B CN103560682B CN201310326699.6A CN201310326699A CN103560682B CN 103560682 B CN103560682 B CN 103560682B CN 201310326699 A CN201310326699 A CN 201310326699A CN 103560682 B CN103560682 B CN 103560682B
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- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 59
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000004411 aluminium Substances 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims abstract description 36
- 238000003466 welding Methods 0.000 claims abstract description 31
- 238000002788 crimping Methods 0.000 claims abstract description 24
- 239000002356 single layer Substances 0.000 claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 239000011889 copper foil Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
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- 238000005476 soldering Methods 0.000 claims description 3
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- 238000005516 engineering process Methods 0.000 description 3
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- 230000009286 beneficial effect Effects 0.000 description 2
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- 230000007423 decrease Effects 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
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- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000004899 motility Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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Abstract
The present invention relates to a kind of power driven system, including the technical-constructive design of the parallel three phase circuit of a kind of monolayer aluminium base, make each doab complete the parallel connection of corresponding MOSFET；The power input structure of a kind of aluminium base, DC current input uses the mode of welding to be connected on aluminium base, uses the mode screw of crimping and laminated bus to connect；A kind of alternating current export structure, uses the output interface of crimping mode, uses square pads, exports by the mode of screw fastening, makes production operation simple, and efficiency is high and is easily achieved modularity so that connect simple between each module；The structure of a kind of laminated bus, utilizes PCB as dc bus, and both positive and negative polarity walks PCB top layer and bottom respectively, repeatability the highest between both positive and negative polarity；A kind of input/output signal structure design so that the MOSFET of each brachium pontis is used alone an adapter；A kind of MOSFET layout for the design of monolayer aluminium base electrical property feature so that the output electric current of unitary block of aluminum substrate can reach 400Arms.
Description
Technical field
The present invention relates to a kind of power driven system, be mainly used in motor and drive.
Background technology
Along with minimizing and the growing interest of mankind's environmental pollution of fossil energy, the drive system with motor as power is able to extensively
Application, be especially able to high speed development in mobile traffic field, such as electric automobile and hybrid electric vehicle power drive system,
High-speed railway locomotive power-driven system, military boats and ships drive system, unmanned plane unmanned vehicle drive system etc..Mobile traffic
Drive system currently mainly has both direction, a class to be low-pressure systems, and cell voltage, typically at below 100V, is mainly used in
Low speed mobile traffic, such as low-speed electronic car, unmanned scout car etc.；Another kind of, it is high-pressure system, cell voltage typically exists
More than 200V, is mainly used in the high-speed mobile vehicles, such as height electric vehicle, high-speed railway locomotive etc..In drive system
Power device in, the features such as MOSFET is fast with its switching speed, it is easy in parallel, advantage of lower cost, be especially suitable for low pressure system
System.The R of low pressure MOSFETDS(ON)More than tens milliohms of milliohm can be accomplished at present, so make its conduction loss the lowest, separately
Its R outerDS(ON)There is positive temperature coefficient so that MOSFET is suitable for used in parallel, ideally the current capacity position after parallel connection
Each individual devices electric current sum, thus the number of paralleling MOS FET according to system power requirement, can be determined.But use multiple
The problem that paralleling MOS FET brings is the increase in device connection, heat radiation, current balance and thermal balance problem.
Used in parallel currently for multiple MOSFET, the design of its structure mainly has three kinds: (1) based on complicated dc bus also
Connection, this structure uses direct insertion MOSFET substantially, specific implementation method be: first planned that the distribution of element and direct current are female
The connected mode of line, is then welded on the MOSFET being fixed on dc bus on the pcb board designed, and this structure is pacified
Dress complex process, actual production inefficiency, and also maintenance and debugging are the most inconvenient；(2) parallel connection based on monolayer aluminium base,
This method is generally adopted by surface-adhered type MOSFET, connects with monolayer Copper Foil, and its mounting process is greatly simplified, heat conduction system
Number height are especially advantageous for the thermal balance of MOSFET, but to be current loop area big for its shortcoming, causes stray inductance big；(3) base
In the parallel connection of double layer substrate, that this method is typically also adopted by is surface-adhered type MOSFET, connects with double-deck Copper Foil, its electric current
Loop is little, is beneficial to reduce stray inductance, mounting process and monolayer aluminium base suitable, but its shortcoming is the production technology of aluminium base
Complexity, cost is greatly improved, and because adding one layer of FR-4, causing the heat conductivity of aluminium base to decline, and being unfavorable for
The thermal balance of MOSFET.Except of course that also have other certain methods beyond above method, but there is certain shortcoming.
Summary of the invention
The technology of the present invention solves problem: overcome the deficiencies in the prior art, it is provided that a kind of power driven system: based on monolayer aluminum base
Plate coordinates the electrical structure of laminated bus, while reducing current loop area, keeps monolayer aluminium base thermal conductivity high, hot all
The advantage that weighing apparatus property is good, provides bigger power density and good thermal balance with less area.
The technical solution of the present invention: a kind of power driven system, it is characterised in that: include the three-phase of a kind of monolayer aluminium base
Parallel circuit layout and electrical structure.
The parallel three phase circuit layout of described monolayer aluminium base includes: on monolayer aluminium base, is divided into 3 regions from the bottom to top
21,22,23 (as shown in Figure 2), is U, V, W alpha region respectively, each region by upper pipe paralleling MOS FET module and under
Pipe paralleling MOS FET module is constituted, and whole parallel three phase circuit has the paralleling MOS FET module that 6 rows are parallel, each row's module
Include n MOSFET, wherein n >=1；Monolayer aluminium base is divided into 7 electric current doabs by 6 row's paralleling MOS FET modules,
It is respectively pipe source electrode and U phase down tube drain electrode doab 36, U phase and V in U phase down tube source electrode doab 37, U phase from bottom to up
The upper pipe source electrode of Xiang Shangguan drain electrode doab 35, V phase and down tube drain doab 34, W phase and V phase down tube source electrode doab 33,
Pipe source electrode and pipe drain electrode doab 31 in down tube drain electrode doab 32, W phase in W phase；Pipe drain electrode doab 31, U in W phase
It is respectively disposed with positive pole electric current input interface 39 mutually with pipe drain electrode doab 35 in V phase, in U phase down tube drain electrode doab 37,
In V phase, pipe source electrode is respectively disposed with cathodal current output interface 38 with down tube drain electrode doab 33；Pipe source electrode and U in U phase
The upper pipe source electrode of phase down tube drain electrode doab 36, V phase and pipe source electrode in down tube drain electrode doab 34, W phase and down tube drain electrode doab
32 are respectively disposed with exchange output interface 310；
Owing to these three parallel circuits are symmetrical, describe dynamically so carrying out circuit as a example by the current trend of W phase.Electric current
Being flowed into pipe drain electrode doab in W phase by positive pole electric current input interface, from W phase, pipe paralleling MOS FET module flow in W phase pipe
Source electrode and down tube drain electrode doab, in W phase, pipe source electrode exchanges output interface with down tube drain electrode doab, is used for exporting electric current,
Electric current, through W phase down tube paralleling MOS FET module to W phase and V phase down tube source electrode doab, flows out through cathodal current output interface,
Complete the current loop that the input of current from power source positive pole exports to power cathode.
Described electrical structure includes: aluminium base direct current input/output structure, alternating current export structure, laminated bus structure and defeated
Enter output signal structure；Aluminium base direct current input/output structure uses the mode of welding to be connected to the positive pole electric current of parallel three phase circuit
On input interface 39, cathodal current output interface 38；The mode of alternating current export structure screw fastening is connected to three-phase also
On the exchange output interface 310 of connection circuit；The input and output crimping position 7 screw fastening of laminated bus structure is fitted in unidirectional current
On stream input structure；Signal input/output structure is welded on aluminium base so that U, V, W alpha region 21,22,23 is respectively
There is a signal input output end mouth.This electrical structure utilizes PCB as dc bus, and both positive and negative polarity walks PCB top layer and the end respectively
Layer, repeatability the highest between both positive and negative polarity, effectively reduce stray inductance, and make production operation simple, efficiency is high and is prone to
Realize modularity, connect simple and reliable between each module.
Described aluminium base direct current input/output structure uses U-shaped conductive sheet metal；The side of U-shaped conductive sheet metal is provided with for welding
Welding plane 91, welding plane 91 is provided with for increasing length of invasion, the convenient multiple flutings 93 welding aerofluxus, this fluting
Can effectively increase the length of invasion of welding, and the gas contributed to during large-area welding in soldering paste is discharged, reduce welding sky
Weld strength is improved while the rate of hole；The opposite side of U-shaped conductive sheet metal is provided with the conductive plane 92 for crimping, conductive plane 92
Being provided with the screwed hole 94 installed for screw, outside input and output electric current is flat in conduction by the conductor crimping such as bus, wire
Realize on face 92 and the electric current of module-external inputs and output.
Described alternating current export structure includes conducting block 101, insulating sheath 102, holding screw 103.
The side of described conducting block 101 is provided with the conductive plane 104,105 at 2 for crimping, conductive plane 104,105 at two
On be equipped with installing hole 106；The other side of conducting block 101 is provided with conductive plane 107 at 1, on described conductive plane 107
It is provided with screwed hole 108；The outside of described insulating sheath 102 is a multidiameter 109, and the center of multidiameter 109 is provided with installation
Hole 110, installing hole 110 is used for installing holding screw 103, and multidiameter 109 is used for compressing conducting block 101.
Described laminated bus structure uses PCB as dc bus, haves three layers, and ground floor is top layer Copper Foil, and this layer is top
Layer conductive layer；The second layer is FR-4 epoxy plate；Third layer is bottom Copper Foil, is bottom conductive layer.
Described signal input/output structure makes each phase of three-phase drive circuit use a signal input output end mouth respectively.
Compared with prior art, the performance of its beneficial effect is as follows for the present invention:
(1) present invention is reducing while current loop area, keeps that monolayer aluminium base thermal conductivity is high, that thermal balance is good is excellent
Point, so can provide bigger power density and good thermal balance with less area.
(2) circuit aspect simple in construction of the present invention, it is easy to extension and modularity, can be by changing the quantity of paralleling MOS FET
Mate the drive system of different capacity grade, there is bigger motility.
(3) electrical structure aspect of the present invention uses welding and the connected mode of screw fastening, and technique is easily achieved so that aluminum base
Plate produces and is prone to mass, and controller assembly operation is simple, and efficiency is high, and reliability is high.
(4) owing to reducing loop area, power density is high, thermal balance performance is good, reliability is high, so that system
Holistic cost is lower than original technical scheme, and the popularization to low-voltage driving system can play positive role.
Accompanying drawing explanation
Fig. 1 is the system schematic of the present invention；Wherein: 1 be diversion column B+, 2 be diversion column B-, 3 be electric capacity, 4 be top
Layer Copper Foil, 5 be FR-4 epoxy plate, 6 be bottom Copper Foil, 7 be aluminium base input and output crimping position, 8 be exchange diversion column, 9
It it is parallel three phase circuit.
Fig. 2 is the circuit theory diagrams of the present invention；Wherein: 21 be U alpha region, 22 be V alpha region, 23 be W alpha region.
Fig. 3 is parallel three phase circuit MOSFET distribution and the current relationship of the present invention；Wherein: 31 be pipe doab in W phase,
32 be pipe source electrode and down tube drain electrode doab in W phase, 33 be W phase with V phase down tube source electrode doab, 34 be Guan Yuan in V phase
Pole and down tube drain electrode doab, 35 be U phase and V phase in pipe drain electrode doab, 36 be U phase in pipe source electrode and U phase down tube leakage
Doab, pole, U phase down tube source electrode doab.
Fig. 4 is the aluminium base schematic diagram of the present invention；Wherein: 31 be pipe doab in W phase, 32 be in W phase pipe source electrode with under
Pipe drain electrode doab, 33 be W phase with V phase down tube source electrode doab, 34 be V phase in pipe source electrode and down tube drain doab,
35 be U phase with pipe drain electrode doab in V phase, 36 be pipe source electrode and U phase down tube drain electrode doab, U phase down tube source electrode U phase in
Doab, 38 be cathodal current output interface, 39 be positive pole electric current input interface, 310 be exchange output interface.
Fig. 5 is the parallel three phase electrical block diagram of the present invention；Wherein: 51 is holding screw, 52 is insulating sheath, 53
Being conducting block, 54 is B+ aluminium base input crimping position, and 55 is aluminium base, and 56 is heat-conducting interface material, and 57 is fin, 58,
59,510 it is signal input output end mouth, 511 is MOSFET, 512 is B-aluminium base input crimping position, 513 is B+ aluminum base
Plate input crimping position, 514 be B-aluminium base input crimping position.
Fig. 6 is the laminated bus structure schematic diagram of the present invention；Wherein: 4 be top layer Copper Foil, 5 be FR-4 epoxy plate, 6 be the end
Layer Copper Foil.
Fig. 7 is that the present invention often arranges 3 MOSFET circuit theory diagrams in parallel；
Fig. 8 is that the present invention often arranges 12 MOSFET circuit theory diagrams in parallel；
Fig. 9 is the aluminium base direct current input/output structure schematic diagram of the present invention；Wherein: 91 is welding plane, 92 is for pressing
The conductive plane connect, 93 is that 94 install for screw for increasing length of invasion, the convenient multiple flutings welding aerofluxus
Screwed hole.
Figure 10 is the exchange input structure schematic diagram of the present invention；Wherein: 104,105 is conductive plane, 106 be installing hole,
107 is the conductive plane of conducting block 53 other side, and 108 is screwed hole, and 109 is multidiameter, and 110 is installing hole.
Detailed description of the invention
As it is shown in figure 1, the power driven system of the present invention includes parallel three phase circuit layout and the electrical structure of monolayer aluminium base.
The parallel three phase circuit layout of monolayer aluminium base includes: on monolayer aluminium base, be divided into from the bottom to top 3 regions 21,22,
23 (as shown in Figure 2), are U, V, W alpha region respectively, and each region is by upper pipe paralleling MOS FET module and down tube paralleling MOS FET
Module is constituted, and whole parallel three phase circuit has the paralleling MOS FET module that 6 rows are parallel, and each row's module includes n
MOSFET, wherein n >=1；Monolayer aluminium base is divided into 7 electric current doabs by 6 row's paralleling MOS FET modules, divides from bottom to up
Not Wei in U phase down tube source electrode doab 37, U phase pipe source electrode and U phase down tube drain electrode doab 36, U phase and the upper pipe of V phase drain
Pipe source electrode and down tube drain electrode doab 34, W phase and Guan Yuan in V phase down tube source electrode doab 33, W phase in doab 35, V phase
Pole and pipe drain electrode doab 31 in down tube drain electrode doab 32, W phase；In W phase in pipe drain electrode doab 31, U phase and V phase
Pipe drain electrode doab 35 is respectively disposed with positive pole electric current input interface 39, Guan Yuan in U phase down tube drain electrode doab 37, V phase
Pole is respectively disposed with cathodal current output interface 38 with down tube drain electrode doab 33；In U phase, pipe source electrode drains with U phase down tube
Pipe source electrode and pipe source electrode in down tube drain electrode doab 34, W phase and down tube drain electrode doab 32 cloth respectively in doab 36, V phase
It is equipped with exchange output interface 310.
The parallel three phase circuit layout (as a example by the quantity of paralleling MOS FET is 8) of monolayer aluminium base is such as Fig. 2: Q1 to Q16
It is the MOSFET of V phase for the MOSFET of W phase, Q17 to Q32, the MOSFET of Q33 to Q48 position U phase.Wherein Q1 to Q8
These 8 MOSFET parallel connections；These 8 MOSFET parallel connections of Q9 to Q16；These 8 MOSFET parallel connections of Q17 to Q24；Q25
To these 8 MOSFET parallel connections of Q32, these 8 MOSFET parallel connections of Q33 to Q40；These 8 MOSFET parallel connections of Q41 to Q48.
Q1 to Q48 on aluminium base as in figure 2 it is shown, whole aluminium base is divided into 3 regions by the distribution of U, V, W phase, this
48 MOSFET are symmetrically distributed in these 3 regions.Q1 to Q16 is distributed in W alpha region 23；Q17 to Q32 is distributed in V
Alpha region 22；Q33 to Q48 is distributed in U alpha region 21.
In fig. 2, give the CURRENT DISTRIBUTION of MOSFET simultaneously, owing to each phase current trend is identical, the most specifically divide
The current trend of analysis W phase:
As shown in Figure 3, the drain electrode parallel connection of Q1 to Q8 forms pipe drain electrode doab 31, the source electrode of Q1 to Q8 and Q9 in W phase
Drain electrode to Q16 is connected to form pipe source electrode and down tube drain electrode doab 32 in W phase, and the sources connected in parallel of Q9 to Q16 forms W phase
With V phase down tube source electrode doab 33.
The current trend of W phase as it is shown on figure 3, electric current is flowed into the upper pipe of W phase by laminated bus power positive end drains doab 31, and
From W phase pipe source electrode and down tube drain electrode doab 32 flow out, by conducting block 53 with exchange diversion column 8 input and output alternating current
Stream, the power supply negative terminal of W phase and V phase down tube source electrode doab 33 laminated bus connects, and completes electric current by " B+ " input to " B-"
The current loop of output.In Fig. 3, in W phase, lamination is passed through with pipe drain electrode doab 35 in U phase and V phase in pipe drain electrode doab 31
Bus connects, and W phase and phase down tube doab, V phase down tube source electrode doab 33 and U 37 are connected by laminated bus.
Fig. 4 is aluminium base schematic diagram, the annexation of corresponding diagram 3.Pipe drain electrode doab 31, W phase in W phase as shown in Figure 4
Have respectively with pipe drain electrode doab 35, U phase down tube source electrode doab 37 in V phase with V phase down tube source electrode doab 33, U phase
One pad 38, for welding current input and output conducting strip；In W phase, pipe source electrode drains in doab 32, V phase with down tube
Pipe source electrode and the upper pipe source electrode of down tube drain electrode doab 34, U phase and down tube drain doab 36 have respectively 2 symmetrical right
Outer connection pad 39, for input and output alternating current.
Described electrical structure includes: aluminium base direct current input/output structure, alternating current export structure, laminated bus structure and defeated
Enter output signal structure；MOSFET 511 is welded on the pad of aluminium base Q1-Q48；Aluminium base direct current input/output structure is adopted
It is connected on the positive pole electric current input interface 39 of parallel three phase circuit, cathodal current output interface 38 by the mode of welding；Exchange
The mode of electric current export structure screw fastening is connected on the exchange output interface 310 of parallel three phase circuit；Laminated bus structure
Input and output crimping position 7 with screw fastening be fitted on DC current input structure；Signal input/output structure is welded on aluminum base
On plate so that U, V, W alpha region 21,22,23 has a signal input output end mouth respectively.
(1) as it is shown in figure 1, laminated bus such as 4 in figure, 5,6, by " 1 diversion column B+ ", " 2 diversion column B-"
It is connected with power supply, is fitted in the unidirectional current of parallel three phase circuit 9 by 4 aluminium base input and output crimping positions 7 with screw fastening
On stream input structure.Electric current from positive source by " 1 diversion column B+ " through top layer Copper Foil, electric capacity 3, flow to 2 " B+ aluminum
Substrate input crimping position " 54,513, it is transferred to the MOSFET drain electrode doab of each phase of parallel three phase circuit 9, each phase of aluminium base
MOSFET source doab by 2 " B-aluminium bases input crimping positions " 512,514, flow to " 2 water conservancy diversion through bottom Copper Foil
Post B-" complete electric current current loop from positive source to power cathode.This structure not only decreases current loop area, with
Time reduce the stray inductance in circuit, be effectively increased the current capacity of circuit.System has 3 exchange diversion columns 8, with W
As a example by Xiang, output baffle 53 is crimped on aluminium base 55 by screw 51 by insulation sleeve 52, and crimping pad is square, as
In Fig. 4 shown in 310, exchange diversion column 8 is crimped on the conductive plane of baffle 53 (as shown in Figure 10 107),
For system output AC electric current.System has three signal input output ends, and MOSFET controller signals passes through signal input and output
The grid control signal of three-phase six road MOSFET is inputted this power amplifier board by port 58,59,510, to control leading of each MOSFET
Logical-deadline, the MOSFET of each parallel connection is controlled by same control signal；Aluminium base 55 by heat-conducting interface material 56 with
Fin 57 is connected.This kind of electrical structure makes production operation simple, and efficiency is high and is easily achieved modularity so that each module
Between connect simple.
(2) described aluminium base direct current input/output structure is as it is shown in figure 9, use U-shaped conductive sheet metal；U-shaped conductive sheet metal
Side is provided with the welding plane 91 for welding, and welding plane 91 is provided with for increasing length of invasion, conveniently welding aerofluxus
Multiple flutings 93, this fluting can effectively increase the length of invasion of welding, and the gas contributed to during large-area welding in soldering paste
Body is discharged, and improves weld strength while reducing welding voidage；The opposite side of U-shaped conductive sheet metal is provided with the conduction for crimping
Plane 92, conductive plane 92 is provided with the screwed hole 94 installed for screw, and outside input and output electric current passes through bus, leads
The conductor crimpings such as line realize on conductive plane 92 and the electric current of module-external inputs and output.
(3) described alternating current export structure is as it is shown in figure 5, include: conducting block 53, insulating sheath 52, holding screw 51；
As shown in Figure 10, the side of described conducting block 53 is provided with at 2 for crimping conductive plane 104,105, conductive plane
104,105 it is provided with installing hole 106；The other side of conducting block 53 is provided with conductive plane 107 at 1, described conductive plane
107 are provided with screwed hole 108；The outside of described insulating sheath 52 is a multidiameter 109, and the center of multidiameter 109 is provided with
Installing hole 110, installing hole 110 is used for installing holding screw 51, and multidiameter 109 is used for compressing conducting block 53.
(4) described laminated bus structure uses PCB as dc bus, haves three layers, as shown in Figure 6.Ground floor is top layer
Copper Foil 4, this layer is top layer conductive layer, and its copper thickness is generally 35-140 μm；The second layer is FR-4 epoxy plate 5, its
Thickness is typically at 1.0-2.0mm；Third layer is bottom Copper Foil 6, and this layer is bottom conductive layer, and its thickness is typically at 35-140
μm.The laminated bus of this kind of structure can weld bus capacitor easily, makes that production operation is simple, efficiency is high and is prone to mould
Massing.
This parallel three phase circuit is applicable to the MOSFET parallel connection of varying number and (is such as formed module in parallel by 3 MOSFET
Schematic diagram as it is shown in fig. 7, the module schematic diagram in parallel being made up of 12 MOSFET as shown in Figure 8) different capacity can be mated
The drive system of grade.Simultaneously by a calibration power module can also be regarded with the parallel three phase circuit of upper type design, can
So that the parallel three phase circuit in parallel of above structure is used, only need to be by corresponding input and output terminal be linked together time in parallel
?.
This structure of the present invention is on conventional aluminum substrate in a word, is connected by custom-designed input and output port and laminated bus
Connecing is an entirety, can provide bigger power density and good thermal balance with less plate area.The present invention includes one
Plant the technical-constructive design of the parallel three phase circuit of monolayer aluminium base, make each doab complete the parallel connection of corresponding MOSFET；A kind of
The power input structure of aluminium base, DC current input uses the mode of welding to be connected on aluminium base, uses the mode of crimping
Connecting with screw and laminated bus, make production operation simple, efficiency is high and is easily achieved modularity so that connect between each module
Connect simple；A kind of alternating current export structure, uses the output interface of crimping mode, uses square pads, with screw fastening
Mode exports, and makes production operation simple, and efficiency is high and is easily achieved modularity so that connect simple between each module；A kind of
The structure of laminated bus, utilizes PCB as dc bus, and both positive and negative polarity walks PCB top layer and bottom respectively, between both positive and negative polarity very
High repeatability；A kind of input/output signal structure design so that the MOSFET of each brachium pontis is used alone an adapter；
A kind of MOSFET layout for the design of monolayer aluminium base electrical property feature so that the output electric current of unitary block of aluminum substrate can reach
400Arms。
Non-elaborated part of the present invention belongs to techniques well known.
Utilize technical solutions according to the invention, or those skilled in the art is under the inspiration of technical solution of the present invention, designs
Similar technical scheme, and reach above-mentioned technique effect, all fall into protection scope of the present invention.
Claims (5)
1. a power driven system, it is characterised in that: include parallel three phase circuit layout and the electrical structure of monolayer aluminium base；
The parallel three phase circuit layout of described monolayer aluminium base includes: on monolayer aluminium base, is divided into 3 regions from the bottom to top and divides
Not being U, V, W alpha region, each region is made up of upper pipe paralleling MOS FET module and down tube paralleling MOS FET module；Whole
Parallel three phase circuit has the paralleling MOS FET module that 6 rows are parallel, and each row's module includes n MOSFET, and wherein n is big
In 1；Monolayer aluminium base is divided into 7 electric current doabs, the most respectively U phase down tube source by 6 row's paralleling MOS FET modules
Pipe source electrode and pipe source electrode in pipe drain electrode doab, V phase in U phase down tube drain electrode doab, U phase and V phase in doab, pole, U phase
Manage in down tube drain electrode doab, W phase with pipe source electrode in V phase down tube source electrode doab, W phase with down tube drain electrode doab, W phase
Drain electrode doab；In W phase, in pipe drain electrode doab, U phase and V phase, pipe drain electrode doab is respectively disposed with the input of positive pole electric current
Interface, in U phase down tube source electrode doab, W phase and V phase down tube source electrode doab be respectively disposed with cathodal current output interface；
In U phase in pipe source electrode and U phase down tube drain electrode doab, V phase in pipe source electrode and down tube drain electrode doab, W phase pipe source electrode with
Down tube drain electrode doab is respectively disposed with exchange output interface；
Described electrical structure includes: direct current input/output structure, alternating current export structure, laminated bus structure and signal input
Export structure；Direct current input/output structure uses the mode of welding to be connected to the positive pole electric current input interface of parallel three phase circuit, bear
On electrode current output interface；The mode of alternating current export structure screw fastening is connected to the exchange output of parallel three phase circuit and connects
On mouth；The input and output crimping position screw fastening of laminated bus structure is fitted on direct current input/output structure；Signal input is defeated
Go out structure welding on aluminium base so that U, V, W alpha region has a signal input output end mouth respectively.
Power driven system the most according to claim 1, it is characterised in that: described direct current input/output structure uses U
Shape conductive sheet metal；The side of U-shaped conductive sheet metal is provided with the welding plane for welding, and welding plane is provided with for increasing infiltration
Length, the convenient multiple flutings welding aerofluxus, this fluting can effectively increase the length of invasion of welding, and contribute to big face
During long-pending welding, the gas in soldering paste is discharged, and improves weld strength while reducing welding voidage；The opposite side of U-shaped conductive sheet metal
Being provided with the conductive plane for crimping, conductive plane is provided with the screwed hole installed for screw.
Power driven system the most according to claim 1, it is characterised in that: described alternating current export structure includes leading
Electricity block, insulating sheath and holding screw；The side of described conducting block is provided with the conductive plane at two for crimping, and at two, conduction is flat
Installing hole it is equipped with on face；The other side of conducting block is provided with conductive plane at 1, and this conductive plane is provided with screwed hole；Described
The outside of insulating sheath is a multidiameter, and the center of multidiameter is provided with installing hole, and installing hole is used for installing holding screw, ladder
Axle is used for compressing conducting block.
Power driven system the most according to claim 1, it is characterised in that: described laminated bus structure haves three layers, the
One layer is top layer Copper Foil, and this layer is top layer conductive layer；The second layer is FR-4 epoxy plate；Third layer is bottom Copper Foil, is
Bottom conductive layer.
Power driven system the most according to claim 1, it is characterised in that: described signal input/output structure makes three-phase
Each phase of parallel circuit uses a signal input output end mouth respectively.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103824832B (en) * | 2014-03-13 | 2016-08-24 | 杭州明果教育咨询有限公司 | A kind of integrated six brachium pontis package modules of many MOSFET |
| CN104167931A (en) * | 2014-07-28 | 2014-11-26 | 奇瑞汽车股份有限公司 | Power integration apparatus of low-voltage electric vehicle |
| CN104734535A (en) * | 2015-03-31 | 2015-06-24 | 南通明诺机械有限公司 | Power drive system |
| CN105048911A (en) * | 2015-07-10 | 2015-11-11 | 沈阳航空航天大学 | Large power high efficiency PMSM (Permanent Magnet Synchronous Motor) servo controller for manned electric airplane |
| CN109839534B (en) * | 2017-11-27 | 2021-08-03 | 中国航空工业集团公司西安航空计算技术研究所 | Power current isolation acquisition circuit |
| CN109104814B (en) * | 2018-08-27 | 2020-10-30 | 深圳市兆鸿电子有限公司 | Stepped groove circuit board |
| CN109088187A (en) * | 2018-08-31 | 2018-12-25 | 苏州德锐朗智能科技有限公司 | A kind of transmission of electricity port organization of portable power station |
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| CN202652098U (en) * | 2012-05-22 | 2013-01-02 | 奇瑞汽车股份有限公司 | Inverter circuit module for electromobile controller |
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| JP5805513B2 (en) * | 2011-12-14 | 2015-11-04 | 三菱電機株式会社 | Power semiconductor device |
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| CN102029922A (en) * | 2009-09-27 | 2011-04-27 | 天津市松正电动科技有限公司 | Double-sided aluminum substrate-based power metal oxide semiconductor field effect transistor (MOSFET) parallel circuit and structural design |
| CN202652098U (en) * | 2012-05-22 | 2013-01-02 | 奇瑞汽车股份有限公司 | Inverter circuit module for electromobile controller |
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