CN109217636A - A kind of power device of generic encapsulation - Google Patents
A kind of power device of generic encapsulation Download PDFInfo
- Publication number
- CN109217636A CN109217636A CN201811088479.3A CN201811088479A CN109217636A CN 109217636 A CN109217636 A CN 109217636A CN 201811088479 A CN201811088479 A CN 201811088479A CN 109217636 A CN109217636 A CN 109217636A
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- China
- Prior art keywords
- mould group
- terminal
- thin
- film capacitor
- igbt mould
- Prior art date
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 23
- 239000003990 capacitor Substances 0.000 claims abstract description 72
- 239000010409 thin film Substances 0.000 claims abstract description 70
- 239000010408 film Substances 0.000 claims abstract description 14
- 239000002826 coolant Substances 0.000 claims description 30
- 238000003475 lamination Methods 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 239000000084 colloidal system Substances 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 6
- 238000013461 design Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000000306 component Substances 0.000 description 31
- 238000010586 diagram Methods 0.000 description 22
- 238000001514 detection method Methods 0.000 description 13
- 230000017525 heat dissipation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 229920001971 elastomer Polymers 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000011664 signaling Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000806 elastomer Substances 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000036316 preload Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Abstract
A kind of power device of generic encapsulation, comprising: thin-film capacitor, IGBT mould group, radiating subassembly, drive control component and barricade；Thin-film capacitor and/or IGBT mould group use generic encapsulation, and the size of the shape of thin-film capacitor and/or IGBT mould group is preset value；The size of the shape of corresponding radiating subassembly, drive control component and barricade is preset value；The film fuse connection position of multiple parallel connections is provided in thin-film capacitor, the quantity or size according to power device power output numerical value setting film fuse；Multiple chip dies connection positions are provided in IGBT mould group, the quantity or size according to power device power output numerical value setting chip dies.By using generic encapsulation, using universal standard component, design iterations can be avoided, improve versatility, reduce design cost and production cost for different power output requirements；Meanwhile by using modularized design, power density is improved, reduces the risk, difficulty and period of exploitation.
Description
Technical field
The present invention relates to electric vehicle controller fields, the in particular to power device of generic encapsulation.
Background technique
Orthodox car using petroleum as fuel, although with the continuous improvement of production technology and environmental protection standard, separate unit automobile
Exhaust emissions amount is lower and lower, but with the progress of social development levels, auto industry flourishes, orthodox car ownership
Rapidly increase, huge radix causes the pollution increasingly weighed to air, and automobile exhaust pollution has arrived improvement
Stage.Therefore, new-energy automobile is increasingly subject to the concern of society with its zero emission, zero pollution, and country is also as automobile
Industrial expansion direction is helped.Currently, new-energy automobile development level speed is getting faster, obtained public approval and
It supports, new-energy automobile sales volume increases substantially.
New energy hybrid vehicle/pure electric automobile power electronic controller PEU, core component be IGBT mould group (or
MOSFET mould group), drive control circuit and thin-film capacitor etc..With the development of technology, higher and higher to power density requirements, core
The integrated level and performance requirement of center portion part are higher and higher.The function of power electronic controller PEU is complicated, product design and development difficulty
Greatly, the period is long, risk is high.There are the following problems with production for current power electronic controller PEU design:
1. for power electronic controller PEU, the IGBT mould group (or MOSFET mould group) or thin-film capacitor of different capacity
Kernel size and number it is different, consider the cost of electronic device, generally require to redesign electronic device and encapsulation, lead
Other all components of power electronic controller PEU are caused to be also required to redesign, matched new energy hybrid vehicle/
Pure electric automobile associated components are also required to be modified accordingly, reduce the versatility between like products different model, pole
Big increases design cost and production cost；
2. for extra heavy power electronic controller PEU, the parallel IGBT mould group (or MOSFET mould group) that need to be used,
Integrated difficulty is big, and design is complicated.
Summary of the invention
The purpose of the embodiment of the present invention is that provide a kind of power device of generic encapsulation, by thin-film capacitor and/or
IGBT mould group uses generic encapsulation, makes power electronic controller PEU can be for different power output requirements, using general mark
Quasi-component avoids and redesigns again to power electronic controller PEU because of output power variation, improves the general of product
Property, greatly reduce the design cost and production cost of power electronic controller PEU；By using modular IGBT mould
Group, thin-film capacitor, drive control circuit, radiating subassembly, current detection component and barricade, improve power electronic controller
The power density of PEU effectively reduces risk, difficulty and the period of power electronic controller PEU exploitation.In addition, power device
Integrated form package arrangements have flexible direct current input interface, AC output interface, control circuit signaling interface and cooling medium
Access interface allows power device to be flexibly applied to various electric drive configurations field in different power electronic controller PEU
Institute.
In order to solve the above technical problems, the embodiment of the invention provides a kind of power devices of generic encapsulation, comprising: film
Capacitor, IGBT mould group, radiating subassembly, drive control component and barricade；The thin-film capacitor and/or IGBT mould group are using general
The size of the shape of encapsulation, the thin-film capacitor and/or IGBT mould group is preset value；With the thin-film capacitor and/or IGBT mould
The size of the shape of the radiating subassembly, drive control component and barricade that group is applied in combination is preset value；The thin-film electro
It is provided with the film fuse connection position of multiple parallel connections in appearance, sets the core film according to the power device power output numerical value
The quantity or size of son；Multiple chip dies connection positions are provided in the IGBT mould group, it is defeated according to the power device power
Numerical value sets the quantity or size of the chip dies out.
Further, the IGBT mould group is set to the top of the radiating subassembly, and fixes and connect with the radiating subassembly
It connects；The radiating subassembly and IGBT mould group are all set in the side of the thin-film capacitor；The thin-film capacitor respectively with it is described
IGBT mould group is connected with radiating subassembly.
Further, the side of the thin-film capacitor is provided with output copper bar, is provided at least one on the output copper bar
A first output port；The IGBT mould group side is provided at least one second input port, the other side be provided with it is described
The one-to-one second output terminal mouth of second input port；First output port and the second input port, which correspond, to be connected
It connects.
Further, the IGBT mould group includes three IGBT modules, and the opposite two sides of the IGBT module are respectively set
There are second input port and the second output terminal mouth, the first output of second input port and the thin-film capacitor
Port connection；Second input port is respectively positioned on the side of the IGBT mould group, and the second output terminal mouth is respectively positioned on described
The side opposite with second input port side in IGBT mould group.
Further, first output port is the first lamination terminal, and the first lamination terminal is including being sheet
First positive terminal of structure and the first negative terminal being set to above first positive terminal；First positive terminal
The length of horizontal direction is longer than the length of the first negative terminal horizontal direction；First positive terminal and the first negative pole end
Son is overlapped in vertical direction, and first positive terminal and the first negative terminal are connected by insulating trip；Described second is defeated
Inbound port is the second lamination terminal being used cooperatively with the first lamination terminal, and the second lamination terminal is including being sheet
Second positive terminal of structure and the second negative terminal being set to below second positive terminal, second positive terminal
It is identical as the sum of the length of second negative terminal and the first negative terminal as the sum of the length of the first positive terminal, described
Two positive terminals and the second negative terminal it is of same size, second positive terminal and the second negative terminal pass through insulating trip and connect
It connects.
Further, first positive terminal is provided with first through hole far from the side of the thin-film capacitor, and described
One negative terminal is provided with the arc notch to match with first through hole circumference far from the side of the thin-film capacitor；Described second
Negative terminal is provided with the second through-hole identical with first through hole aperture, second anode far from the side of the IGBT mould group
Terminal is provided with the arc notch to match with the second through-hole circumference far from the side of the IGBT mould group；The first through hole and
Screw is provided in second through-hole, the screw passes through insulation tabletting and the first lamination terminal and the second lamination terminal insulative
Connection, the screw bottom is threadedly coupled with predeterminated position.
Further, first negative terminal and the second negative terminal bottom are provided with collets, first cathode
Terminal and the second negative terminal are connected by the collets and predeterminated position insulation.
Further, the lower surface of the radiating subassembly bottom is fixedly connected with the upper surface of the IGBT die set top,
To realize heat transfer with the IGBT mould group.
Further, the radiating subassembly top is provided with the cooling medium access of rectangular recess shape, the radiating subassembly
The opposite two sides in bottom are provided with cooling medium entrance and cooling medium outlet, cooling medium access one end and the cooling
Medium inlet connection, the other end and the cooling medium outlet.
Further, the edge of rectangular recess is provided with sealed colloid at the top of the radiating subassembly；And/or the cooling
Medium inlet and cooling medium outlet edge are provided with sealed colloid.
Further, the sealed colloid is bi-component or multicomponent chemical compound body.
Further, the sealed colloid is molding silicone rubber elastomer.
Further, the barricade is set to the top of the IGBT mould group and the thin-film capacitor, and respectively with institute
Thin-film capacitor is stated to be fixedly connected with radiating subassembly.
Further, the drive control component is set between the IGBT mould group and the barricade, and described
IGBT mould group electrical connection, to control the output power of the IGBT mould group.
Further, the drive control component includes: second circuit board and the drive that is set on the second circuit board
Dynamic circuit module and control circuit module；The second circuit board is fixedly installed on the top of the IGBT mould group, and with it is described
The electrical connection of IGBT mould group.
Further, the drive control component includes: second circuit board, tertiary circuit plate, drive circuit module and control
Circuit module processed；The drive circuit module is set on the second circuit board；The control circuit module is set to described
On tertiary circuit plate；The second circuit board is fixedly installed between the IGBT mould group and the barricade, and with it is described
The electrical connection of IGBT mould group；The tertiary circuit plate is fixedly installed on above the barricade, and is electrically connected with the IGBT mould group.
Further, several the first heat-sink units are provided on the output copper bar of the thin-film capacitor；The heat dissipation group
Part includes radiator and several second heat-sink units for being set to the radiator side；First heat-sink unit and second
Heat-sink unit corresponds and heat conductive insulating connects.
Further, first heat-sink unit includes the first pin, and second heat-sink unit includes second pin, institute
It states the first pin and second pin corresponds；The upper surface of the second pin passes through the first heat conductive isolation sheet and the first heat dissipation
The lower surface of pin connects；The barricade bottom is provided with and several one-to-one preloads of first heat-sink unit
Column, the bottom for pre-tightening column are connect by the second heat conductive isolation sheet with the upper surface of the first heat dissipation pin.
Further, several described first pins include the spaced first positive pin and the first negative pin,
Described first positive pin is connect with the anode of the output copper bar, the cathode of first negative pin and the output copper bar
Connection.
Further, the power device further include: the current detecting being set between the IGBT mould group and barricade
Component；The current detection component includes: first circuit board, insulate the magnetic gathering features being fixedly connected with the first circuit board
With the magnetic signal detection chip being electrically connected with the first circuit board, the first circuit board and the fixed company of the IGBT mould group
It connects；The magnetic gathering features are cyclic structure jaggy, and the magnetic signal detection chip is set to the magnetic gathering features
In the notch of cyclic structure.
Further, the second output terminal mouth is provided with second output terminal, and the second output terminal minor structure is edge
The column or tubbiness of vertical direction setting, the magnetic gathering features are sheathed on second output terminal.
Further, the cross section of second output terminal is round, polygon or annular.
The above-mentioned technical proposal of the embodiment of the present invention has following beneficial technical effect:
1. making power electronic controller PEU can be for not by using generic encapsulation to thin-film capacitor and/or IGBT mould group
Same power output requirement is avoided due to output power variation using general standarized component to power electronic controller PEU
Design iterations are carried out, the versatility of product is improved, greatly reduces design cost and the production of power electronic controller PEU
Cost.
2. by using modular IGBT mould group, thin-film capacitor, drive control circuit, radiating subassembly, current detecting group
Part and barricade improve the power density of power electronic controller PEU, effectively reduce power electronic controller PEU exploitation
Risk, difficulty and period.
3. the integrated form package arrangements of power device have flexible direct current input interface, AC output interface, control circuit
Signaling interface and cooling medium access interface fit power device flexibly in different power electronic controller PEU
Place is configured for various electric drives.
Detailed description of the invention
Fig. 1 a is the big output power generic encapsulation schematic diagram of power module provided in an embodiment of the present invention；
Fig. 1 b is the small output power generic encapsulation schematic diagram of power module provided in an embodiment of the present invention；
Fig. 2 is the isometric front view of power module provided in an embodiment of the present invention；
Fig. 3 is the reverse side perspective view of power module provided in an embodiment of the present invention；
Fig. 4 is the Structure explosion diagram of power module provided in an embodiment of the present invention；
Fig. 5 is IGBT mould group stereoscopic schematic diagram provided in an embodiment of the present invention；
Fig. 6 is thin-film capacitor, radiating subassembly and IGBT mould group connection schematic diagram provided in an embodiment of the present invention；
Fig. 7 is thin-film capacitor and IGBT mould group connection terminal schematic diagram provided in an embodiment of the present invention；
Fig. 8 is thin-film capacitor stereoscopic schematic diagram provided in an embodiment of the present invention；
Fig. 9 is radiating subassembly positive stereoscopic diagram provided in an embodiment of the present invention；
Figure 10 is radiating subassembly reverse side stereoscopic schematic diagram provided in an embodiment of the present invention；
Figure 11 is thin-film capacitor and radiating subassembly provided in an embodiment of the present invention connecting pin heat transfer schematic diagram；
Figure 12 is current detection component structural schematic diagram provided in an embodiment of the present invention.
In attached drawing:
1, thin-film capacitor, 11, film fuse, 12, output copper bar, the 13, first output port, the 131, first positive terminal,
1311, first through hole, the 132, first negative terminal, the 14, first heat-sink unit, the 141, first pin, the 1411, first anode draw
Foot, the 1412, first negative pin, 2, IGBT mould group, 21, chip dies, the 22, second input port, the 221, second positive terminal,
222, the second negative terminal, the 2221, second through-hole, 23, second output terminal mouth, 231, second output terminal, 3, radiating subassembly,
31, radiator, 311, cooling medium entrance, 312, cooling medium outlet, the 32, second heat-sink unit, 321, second pin, 4, drive
Dynamic control assembly, 41, second circuit board, 42, tertiary circuit plate, 5, barricade, 51, preload column, 6, current detection component, 61,
First circuit board, 62, magnetic gathering features, 63, magnetic signal detection chip, the 71, first heat conductive isolation sheet, the 72, second heat conductive insulating
Piece, 73, screw, 74, insulation tabletting, 75, collets.
Specific embodiment
In order to make the objectives, technical solutions and advantages of the present invention clearer, With reference to embodiment and join
According to attached drawing, the present invention is described in more detail.It should be understood that these descriptions are merely illustrative, and it is not intended to limit this hair
Bright range.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to avoid this is unnecessarily obscured
The concept of invention.
Fig. 1 a is the big output power generic encapsulation schematic diagram of power module provided in an embodiment of the present invention.
Fig. 1 b is the small output power generic encapsulation schematic diagram of power module provided in an embodiment of the present invention.
Fig. 2 is the isometric front view of power module provided in an embodiment of the present invention.
Fig. 3 is the reverse side perspective view of power module provided in an embodiment of the present invention.
Fig. 4 is the Structure explosion diagram of power module provided in an embodiment of the present invention.
Please refer to Fig. 1 a, Fig. 1 b, Fig. 2, Fig. 3 and Fig. 4, a kind of power device of generic encapsulation, comprising: thin-film capacitor 1,
IGBT mould group 2, radiating subassembly 3, drive control component 4 and barricade 5.Thin-film capacitor 1 and/or IGBT mould group 2 use general envelope
The size of the shape of dress, thin-film capacitor 1 and/or IGBT mould group 2 is preset value.It is combined with thin-film capacitor 1 and/or IGBT mould group 2
The size of the shape of the radiating subassembly 3, drive control component 4 and barricade 5 that use is preset value.It is provided in thin-film capacitor 1
11 connection position of film fuse of multiple parallel connections, the quantity or big of foundation power device power output numerical value setting film fuse 11
It is small.It is provided with multiple 21 connection positions of chip dies in IGBT mould group 2, sets chip dies according to power device power output numerical value
21 quantity or size.
As illustrated in figs. 1A and ib, power device is directed to different output powers, using identical modularized design.Pass through
Generic encapsulation is used to thin-film capacitor and/or IGBT mould group, power electronic controller PEU can for different power outputs
It asks, using general standarized component, avoids and design iterations are carried out to power electronic controller PEU because of output power variation,
The versatility for improving product greatly reduces the design cost and production cost of power electronic controller PEU.
IGBT mould group 2 is set to the top of radiating subassembly 3, and is fixedly connected with radiating subassembly 3.Radiating subassembly 3 and IGBT
Mould group 2 is all set in the side of thin-film capacitor 1.Thin-film capacitor 1 is connect with IGBT mould group 2 and radiating subassembly 3 respectively.
Fig. 5 is IGBT mould group stereoscopic schematic diagram provided in an embodiment of the present invention.
Fig. 6 is thin-film capacitor, radiating subassembly and IGBT mould group connection schematic diagram provided in an embodiment of the present invention.
Fig. 7 is thin-film capacitor and IGBT mould group connection terminal schematic diagram provided in an embodiment of the present invention.
Fig. 8 is thin-film capacitor stereoscopic schematic diagram provided in an embodiment of the present invention.
Referring to figure 5., Fig. 6 and Fig. 7, the side of thin-film capacitor 1 are provided with output copper bar 12, export and be provided on copper bar 12
At least one first output port 13；2 side of IGBT mould group is provided at least one second input port 22, and the other side is provided with
With the one-to-one second output terminal mouth 23 of the second input port 22；First output port 13 and the second input port 22 1 are a pair of
It should connect.
IGBT mould group 2 includes three IGBT modules, and the opposite two sides of IGBT module are respectively arranged with the second input port 22
With second output terminal mouth 23, the second input port 22 is connect with the first output port 13 of thin-film capacitor 1；Second input port 22
It is respectively positioned on the side of IGBT mould group 2, second output terminal mouth 23 is respectively positioned on opposite with 22 side of the second input port in IGBT mould group 2
Side.
First output port 13 is the first lamination terminal, and the first lamination terminal includes the first positive terminal for being laminated structure
Son 1341 and the first negative terminal 132 for being set to 131 top of the first positive terminal；First positive terminal, 131 horizontal direction
Length is longer than the length of 132 horizontal direction of the first negative terminal；First positive terminal 131 and the first negative terminal 132 are vertical
Direction overlaps, and the first positive terminal 131 is connected with the first negative terminal 132 by insulating trip；Second input port 22 is
The second lamination terminal being used cooperatively with the first lamination terminal, the second lamination terminal include the second positive terminal for being laminated structure
Son 221 and the second negative terminal 222 for being set to 221 lower section of the second positive terminal, the second positive terminal 221 and the first positive terminal
The sum of the length of son 131, second positive terminal identical as the sum of the length of the second negative terminal 222 and the first negative terminal 132
221 and second negative terminal 222 it is of same size, the second positive terminal 221 and the second negative terminal 222 pass through insulating trip and connect
It connects.First lamination terminal and the second lamination terminal use stack bus bar, compared to traditional copper bar terminal, the faying surface of stack bus bar
Product is big, and current loop area is small, and the spike during stray inductance, electromagnetic interference influence and IGBT module switch can be obviously reduced
Voltage.
First positive terminal 131 is provided with first through hole 1311, the first negative terminal 131 far from the side of thin-film capacitor 1
Side far from thin-film capacitor 1 is provided with the arc notch to match with 1311 circumference of first through hole；Second negative terminal 222 is remote
Side from IGBT mould group 2 is provided with the second through-hole 2211 identical with 1311 aperture of first through hole, and the second positive terminal 221 is remote
Side from IGBT mould group 2 is provided with the arc notch to match with 2211 circumference of the second through-hole；First through hole 1311 and second
Screw 73 is provided in through-hole 2221, screw 73 is connected by insulation tabletting 74 and the first lamination terminal and the second lamination terminal insulative
It connects, 73 bottom of screw is threadedly coupled with predeterminated position.By will connect with the first lamination terminal and the second lamination terminal insulative
Screw 73 is fixed on predeterminated position, and the first lamination terminal and the second lamination terminal are connected firmly, it is ensured that electric property is stablized, Du
Absolutely because the performance that circuit virtual connection or disconnect influences power electronic controller PEU is stablized, the safety coefficient of driving is improved.
First negative terminal 132 and 222 bottom of the second negative terminal are provided with collets 75,132 He of the first negative terminal
Second negative terminal 222 is connected by collets 75 and predeterminated position insulation.Collets 75 realize 132 He of the first negative terminal
Second negative terminal, 222 bottom and for the insulation between the predeterminated position of fixing screws 73, avoids the first negative terminal 132
And second be electrically connected between negative terminal 222 and car body, improves safety coefficient.In addition, collets 75 are also folded to first
Layer terminal and the second lamination terminal link position provide support, improve the stabilization of the two connection structure.
Fig. 9 is radiating subassembly positive stereoscopic diagram provided in an embodiment of the present invention.
Figure 10 is radiating subassembly reverse side stereoscopic schematic diagram provided in an embodiment of the present invention.
Fig. 9 and Figure 10 are please referred to, the lower surface of 3 bottom of radiating subassembly is fixedly connected with the upper surface at 2 top of IGBT mould group,
To realize heat transfer with IGBT mould group 2.
3 top of radiating subassembly is provided with the cooling medium access of rectangular recess shape, and the opposite two sides in 3 bottom of radiating subassembly are set
It is equipped with cooling medium entrance 311 and cooling medium outlet 312, cooling medium access one end is connected to cooling medium entrance 311, separately
One end is connected to cooling medium outlet 312.
3 top of radiating subassembly is provided with sealed colloid, the edge dispenser point of rectangular recess along the edge of rectangular recess
Sealed colloid is applied, particular cross section size is formed, at certain size after solidification.After IGBT mould group is connect with radiator, screw is used
IGBT mould group and radiator are compressed, preforming cured glue surface is compressed and guarantees sealing effect.
Cooling medium entrance 311 and 312 outlet edge of cooling medium are provided with sealed colloid, 311 He of cooling medium entrance
Cooling medium exports 312 edges dispenser spot printing sealed colloid, connect with vehicle-mounted cooling water channel, and compressed with screw,
Ensure sealing effect, avoid in the prior art install rubber ring during it is easy to fall off cause rubber ring damage or use wet glue institute
The problems such as bring curing time is long.
Optionally, sealed colloid is bi-component or multicomponent chemical compound body, it is preferred that sealed colloid is molding silicone rubber
Elastomer.
Referring to figure 4., in an embodiment of the embodiment of the present invention, drive control component 4 is set to IGBT mould group 2
It between barricade 5, is electrically connected with IGBT mould group 2, to control the output power of IGBT mould group 2.
In the another embodiment of the embodiment of the present invention, drive control component 4 includes: second circuit board 41, third
Circuit board 42, drive circuit module and control circuit module；Drive circuit module is set on second circuit board 41；Control circuit
Module is set on tertiary circuit plate 42；Second circuit board 41 is fixedly installed between IGBT mould group 2 and barricade 5, and with
IGBT mould group 2 is electrically connected；Tertiary circuit plate 42 is fixedly installed on 5 top of barricade, and is electrically connected with IGBT mould group 2.
Barricade 5 is set to the top of IGBT mould group 2 and thin-film capacitor 1, and respectively with thin-film capacitor 1 and radiating subassembly 3
It is fixedly connected.
Figure 11 is thin-film capacitor and radiating subassembly provided in an embodiment of the present invention connecting pin heat transfer schematic diagram.
Fig. 8 and Figure 11 are please referred to, several first heat-sink units 14 are provided on the output copper bar 12 of thin-film capacitor 1；It dissipates
Hot component 3 includes radiator 31 and several second heat-sink units 32 for being set to 31 side of radiator；First heat-sink unit 14
It is corresponded with the second heat-sink unit 32 and heat conductive insulating is connect.Pass through the company of the first heat-sink unit 14 and the second heat-sink unit 32
It connecing, IGBT mould group 2 conducts to the heat and thin-film capacitor 1 itself of thin-film capacitor 1 heat generated by heat loss through conduction component 3,
The temperature for reducing thin-film capacitor 1 improves performance and the service life of thin-film capacitor 1.
First heat-sink unit 14 includes the first pin 141, and the second heat-sink unit 32 includes second pin 321, the first pin
141 correspond with second pin 321；Drawn by the first heat conductive isolation sheet 71 and the first heat dissipation the upper surface of second pin 321
The lower surface of foot 141 connects；5 bottom of barricade, which is provided with, pre-tightens column 51 with one-to-one several of the first heat-sink unit 14,
The bottom for pre-tightening column 51 is connect by the second heat conductive isolation sheet 72 with the upper surface of the first heat dissipation pin 141.Pre-tighten column 51 and the
Two pins 321 are connect by insulating materials and the first pin 141 realization insulating heat-conductive respectively, and from the upper table of the first pin 141
Face and lower surface realize the connection with the first pin 141, it is ensured that and the first pin 141 is connected with 321 effective of second pin,
Avoid because shake or hit cause heat transfer connecting component occur loosen or position offset due to cause heat-sinking capability reduce or
It cannot achieve heat sinking function, improve the stability of radiator structure.
Several first pins 141 include the spaced first positive pin 1411 and the first negative pin 1412, the
One positive pin 1411 is connect with the anode of output copper bar 12, and the first negative pin 1412 is connect with the cathode of output copper bar 12.
Respectively with the anode of the output copper bar 12 of thin-film capacitor 1 and the first pin 141 for connecting of cathode, pass through the with radiating subassembly 3
The connection of two pins 321 realizes the anode of the output copper bar 12 to thin-film capacitor 1 and cathode while cooling down, improves to film
Capacitor 1 itself generates the heat dissipation effect of heat, improves the performance of thin-film capacitor 1.
Figure 12 is current detection component structural schematic diagram provided in an embodiment of the present invention.
This power device further include: the current detection component 6 being set between IGBT mould group 2 and barricade 5；Current detecting
Component 6 includes: first circuit board 61, insulate the magnetic gathering features 62 and and first circuit board being fixedly connected with first circuit board 61
The magnetic signal detection chip 63 of 61 electrical connections, first circuit board 61 are fixedly connected with IGBT mould group 2；Magnetic gathering features 62 are scarce to have
The cyclic structure of mouth, magnetic signal detection chip 63 are set in the notch of the cyclic structure of magnetic gathering features 62.
Second output terminal mouth 23 is provided with second output terminal 231, and second output terminal 231 structures of son are to set along the vertical direction
The column or tubbiness set, magnetic gathering features 62 are sheathed on 231 on second output terminal.
By setting up cylindric output conductor in the ac output end of IGBT mould group 2, using magnetic gathering features 62 to IGBT
Mould group 2 exports curent change bring changes of magnetic field and is detected, by magnetic signal detection chip 63 to the changing value of magnetic signal into
Row calculates, and extrapolates the three-phase alternating current output current value of IGBT mould group.In addition, passing through integrated vertical current detection component
6, the horizontal space of power device is saved, space utilization rate is increased, improves power density.
Optionally, the cross section of second output terminal 231 is round, polygon or annular；Preferably, second output terminal
231 cross section is circle.
In conclusion the present invention is directed to protect a kind of power device of generic encapsulation, comprising: thin-film capacitor, IGBT mould group,
Radiating subassembly, drive control component and barricade；The thin-film capacitor and/or IGBT mould group use generic encapsulation, the film
The size of the shape of capacitor and/or IGBT mould group is preset value；The institute being applied in combination with the thin-film capacitor and/or IGBT mould group
The size for stating the shape of radiating subassembly, drive control component and barricade is preset value；It is provided in the thin-film capacitor multiple
Film fuse connection position in parallel sets the quantity of the film fuse or big according to the power device power output numerical value
It is small；It is provided with multiple chip dies connection positions in the IGBT mould group, sets institute according to the power device power output numerical value
State the quantity or size of chip dies.Above-mentioned technical proposal of the invention has following effect:
1. making power electronic controller PEU can be for not by using generic encapsulation to thin-film capacitor and/or IGBT mould group
Same power output requirement is avoided due to output power variation using general standarized component to power electronic controller PEU
Design iterations are carried out, the versatility of product is improved, greatly reduces design cost and the production of power electronic controller PEU
Cost.
2. by using modular IGBT mould group, thin-film capacitor, drive control circuit, radiating subassembly, current detecting group
Part and barricade improve the power density of power electronic controller PEU, effectively reduce power electronic controller PEU exploitation
Risk, difficulty and period.
3. the integrated form package arrangements of power device have flexible direct current input interface, AC output interface, control circuit
Signaling interface and cooling medium access interface fit power device flexibly in different power electronic controller PEU
Place is configured for various electric drives.
It should be understood that above-mentioned specific embodiment of the invention is used only for exemplary illustration or explains of the invention
Principle, but not to limit the present invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.In addition, appended claims purport of the present invention
Covering the whole variations fallen into attached claim scope and boundary or this range and the equivalent form on boundary and is repairing
Change example.
Claims (10)
1. a kind of power device of generic encapsulation characterized by comprising thin-film capacitor (1), IGBT mould group (2), radiating subassembly
(3), drive control component (4) and barricade (5)；
The thin-film capacitor (1) and/or the IGBT mould group (2) use generic encapsulation, the thin-film capacitor (1) and/or described
The size of the shape of IGBT mould group (2) is preset value；
The radiating subassembly (3) that is applied in combination with the thin-film capacitor (1) and/or the IGBT mould group (2), driving control
The size of the shape of component (4) processed and the barricade (5) is preset value；
Film fuse (11) connection position of multiple parallel connections, the function according to the power device are provided in the thin-film capacitor (1)
Rate output numerical value sets the quantity or size of the film fuse (11)；
Multiple chip dies (21) connection position, the power output according to the power device are provided in the IGBT mould group (2)
Numerical value sets the quantity or size of the chip dies (21).
2. power device according to claim 1, which is characterized in that
The IGBT mould group (2) is set to the top of the radiating subassembly (3), and is fixedly connected with the radiating subassembly (3)；
The radiating subassembly (3) and IGBT mould group (2) are all set in the side of the thin-film capacitor (1)；
The thin-film capacitor (1) connect with the IGBT mould group (2) and radiating subassembly (3) respectively.
3. power device according to claim 1, which is characterized in that
The side of the thin-film capacitor (1) is provided with output copper bar (12), is provided at least one on the output copper bar (12)
First output port (13)；
IGBT mould group (2) side is provided at least one second input port (22), and the other side is provided with and described second
The one-to-one second output terminal mouth (23) of input port (22)；
First output port (13) connects one to one with the second input port (22).
4. power device according to claim 1, which is characterized in that
The IGBT mould group (2) includes one or more IGBT modules, and the opposite two sides of the IGBT module are respectively set
State the second input port (22) and the second output terminal mouth (23)；
Second input port (22) is respectively positioned on the side of the IGBT mould group (2), the equal position of the second output terminal mouth (23)
In side opposite with the second input port (22) side on the IGBT mould group (2).
5. power device according to claim 3, which is characterized in that
First output port (13) is the first lamination terminal, and the first lamination terminal includes be laminated structure first
Positive terminal (1341) and the first negative terminal (132) being set to above first positive terminal (131)；Described first just
The length of extreme son (131) horizontal direction is longer than the length of the first negative terminal (132) horizontal direction；First anode
Terminal (131) and the first negative terminal (132) are overlapped in vertical direction, first positive terminal (131) and first negative
Extreme son (132) is connected by insulating trip；
Second input port (22) is the second lamination terminal being used cooperatively with the first lamination terminal, and described second is folded
Layer terminal includes being the second positive terminal (221) of laminated structure and being set to below second positive terminal (221)
Second negative terminal (222), the sum of length of second positive terminal (221) and the first positive terminal (131) and described the
The sum of the length of two negative terminals (222) and the first negative terminal (132) is identical, second positive terminal (221) and second
Negative terminal (222) it is of same size, second positive terminal (221) and the second negative terminal (222) pass through insulating trip and connect
It connects.
6. power device according to claim 5, which is characterized in that
First positive terminal (131) is provided with first through hole (1311) far from the side of the thin-film capacitor (1), and described the
One negative terminal (131) is provided with the arc to match with first through hole (1311) circumference far from the side of the thin-film capacitor (1)
V notch v；
Second negative terminal (222) is provided with and first through hole (1311) aperture far from the side of the IGBT mould group (2)
Identical second through-hole (2211), second positive terminal (221) are provided with and the far from the side of the IGBT mould group (2)
The arc notch that two through-holes (2211) circumference matches；
It is provided with screw (73) in the first through hole (1311) and second through-hole (2221), the screw (73) passes through exhausted
Edge tabletting (74) is connect with the first lamination terminal and the second lamination terminal insulative.
7. power device according to claim 6, which is characterized in that
First negative terminal (132) and the second negative terminal (222) bottom are provided with collets (75), first cathode
Terminal (132) and the second negative terminal (222) are connected by the collets (75) and predeterminated position insulation.
8. power device according to claim 2, which is characterized in that
The lower surface of radiating subassembly (3) bottom is fixedly connected with the upper surface at the top of the IGBT mould group (2), with it is described
IGBT mould group (2) realizes heat transfer.
9. power device according to claim 8, which is characterized in that
Radiating subassembly (3) top is provided with the cooling medium access of rectangular recess shape, and radiating subassembly (3) bottom is opposite
Two sides be provided with cooling medium entrance (311) and cooling medium outlet (312), cooling medium access one end with it is described cold
But medium inlet (311) are connected to, and the other end exports (312) with the cooling medium and is connected to.
10. power device according to claim 9, which is characterized in that
The edge of rectangular recess is provided with sealed colloid at the top of the radiating subassembly (3)；And/or
The cooling medium entrance (311) and cooling medium (312) outlet edge are provided with sealed colloid.
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| CN201811088479.3A CN109217636B (en) | 2018-09-18 | 2018-09-18 | Universal packaged power device |
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| CN201811088479.3A CN109217636B (en) | 2018-09-18 | 2018-09-18 | Universal packaged power device |
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| CN109217636B (en) | 2024-02-02 |
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