CN109217636B - Universal packaged power device - Google Patents

Universal packaged power device Download PDF

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Publication number
CN109217636B
CN109217636B CN201811088479.3A CN201811088479A CN109217636B CN 109217636 B CN109217636 B CN 109217636B CN 201811088479 A CN201811088479 A CN 201811088479A CN 109217636 B CN109217636 B CN 109217636B
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China
Prior art keywords
igbt module
power device
terminal
thin film
heat dissipation
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CN109217636A (en
Inventor
王新国
单亮
庄朝晖
牛培路
孙立志
张煜
沈唐斌
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NIO Co Ltd
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NIO Co Ltd
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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003Constructional details, e.g. physical layout, assembly, wiring or busbar connections

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

A generic packaged power device comprising: the device comprises a thin film capacitor, an IGBT module, a heat dissipation assembly, a driving control assembly and a shielding plate; the thin film capacitor and/or the IGBT module adopts universal packaging, and the dimension of the appearance of the thin film capacitor and/or the IGBT module is a preset value; the dimensions of the corresponding heat dissipation assembly, driving control assembly and shielding plate are preset values; a plurality of parallel thin film core connection positions are arranged in the thin film capacitor, and the number or the size of the thin film cores is set according to the power output value of the power device; a plurality of chip bare chip connecting positions are arranged in the IGBT module, and the number or the size of the chip bare chips is set according to the power output value of the power device. By adopting the universal packaging, the universal standard component can be adopted aiming at different power output requirements, so that repeated design is avoided, the universality is improved, and the design cost and the production cost are reduced; meanwhile, by adopting a modularized design, the power density is improved, and the development risk, difficulty and period are reduced.

Description

Universal packaged power device
Technical Field
The invention relates to the field of electric automobile controllers, in particular to a power device with universal packaging.
Background
The traditional automobile takes petroleum as fuel, while the exhaust emission of a single automobile is lower along with the continuous improvement of the production process and environmental protection standard, the automobile industry is vigorously developed along with the progress of the society development level, the traditional automobile has a huge maintenance quantity which is rapidly increased, the huge base of the traditional automobile causes heavier and heavier pollution to air, and the automobile exhaust pollution has reached an unreliability step. Therefore, new energy automobiles are increasingly focused on society with zero emission and zero pollution, and the countries support the new energy automobiles as the development direction of the automobile industry. At present, the development speed of new energy automobiles is faster and faster, the new energy automobiles are accepted and supported by the public, and the sales of the new energy automobiles are greatly increased.
The core components of the PEU of the power electronic controller of the new energy hybrid electric vehicle/pure electric vehicle are an IGBT module (or a MOSFET module), a driving control circuit, a thin film capacitor and the like. With the development of technology, the requirements on power density are higher and higher, and the integration level and performance requirements of core components are higher and higher. The power electronic controller PEU has complex functions, large product design and development difficulty, long period and high risk. The current power electronic controller PEU design and production has the following problems:
1. for the PEU of the power electronic controller with different powers, the sizes and the numbers of the cores of the IGBT modules (or the MOSFET modules) or the film capacitors are different, and the cost of the electronic devices is considered, so that the electronic devices and the packaging are often required to be redesigned, all other components of the PEU of the power electronic controller are also required to be redesigned, and related components of the hybrid electric vehicle/pure electric vehicle matched with the PEU of the power electronic controller are also required to be correspondingly modified, so that the universality among different models of the same product is reduced, and the design cost and the production cost are greatly increased;
2. for the PEU of the power electronic controller with super-high power, the parallel IGBT module (or the MOSFET module) needs to be used, so that the integration difficulty is high, and the design is complex.
Disclosure of Invention
The embodiment of the invention aims to provide a power device with universal packaging, which enables a power electronic controller PEU to meet different power output requirements by adopting universal packaging for a film capacitor and/or an IGBT module, avoids redesigning the power electronic controller PEU due to output power change, improves the universality of products, and greatly reduces the design cost and the production cost of the power electronic controller PEU; through adopting modular IGBT module, film electric capacity, drive control circuit, radiator unit, current detection subassembly and shield plate, improved the power density of power electronic controller PEU, effectively reduced risk, the degree of difficulty and the cycle of power electronic controller PEU development. In addition, the integrated package of the power device is provided with a flexible direct current input interface, an alternating current output interface, a control circuit signal interface and a cooling medium passage interface, so that the power device can be flexibly applied to various electric drive configuration places in different power electronic controllers PEUs.
To solve the above technical problem, an embodiment of the present invention provides a power device of a general package, including: the device comprises a thin film capacitor, an IGBT module, a heat dissipation assembly, a driving control assembly and a shielding plate; the thin film capacitor and/or the IGBT module adopts universal packaging, and the dimension of the appearance of the thin film capacitor and/or the IGBT module is a preset value; the dimensions of the external shapes of the heat dissipation assembly, the driving control assembly and the shielding plate, which are used in combination with the thin film capacitor and/or the IGBT module, are preset values; a plurality of parallel thin film core connection positions are arranged in the thin film capacitor, and the number or the size of the thin film cores is set according to the power output value of the power device; and a plurality of chip bare chip connecting positions are arranged in the IGBT module, and the number or the size of the chip bare chips is set according to the power output value of the power device.
Further, the IGBT module is arranged above the heat dissipation assembly and is fixedly connected with the heat dissipation assembly; the heat dissipation assembly and the IGBT module are arranged on one side of the thin film capacitor; and the thin film capacitor is respectively connected with the IGBT module and the heat dissipation assembly.
Further, one side of the thin film capacitor is provided with an output copper bar, and at least one first output port is arranged on the output copper bar; one side of the IGBT module is provided with at least one second input port, and the other side of the IGBT module is provided with second output ports which are in one-to-one correspondence with the second input ports; the first output ports are connected with the second input ports in a one-to-one correspondence mode.
Further, the IGBT module includes three IGBT modules, the two opposite sides of the IGBT module are respectively provided with the second input port and the second output port, and the second input port is connected with the first output port of the thin film capacitor; the second input ports are all located on one side of the IGBT module, and the second output ports are all located on the side, opposite to the side of the second input ports, of the IGBT module.
Further, the first output port is a first laminated terminal, and the first laminated terminal comprises a first positive terminal and a first negative terminal, wherein the first positive terminal and the first negative terminal are both in a sheet-shaped structure; the length of the first positive electrode terminal in the horizontal direction is longer than the length of the first negative electrode terminal in the horizontal direction; the first positive electrode terminal and the first negative electrode terminal are overlapped in the vertical direction, and are connected through an insulating sheet; the second input port is a second laminated terminal matched with the first laminated terminal, the second laminated terminal comprises a second positive terminal and a second negative terminal, the second positive terminal is of a sheet-shaped structure, the second negative terminal is arranged below the second positive terminal, the sum of the lengths of the second positive terminal and the first positive terminal is identical to the sum of the lengths of the second negative terminal and the first negative terminal, the widths of the second positive terminal and the second negative terminal are identical, and the second positive terminal and the second negative terminal are connected through an insulating sheet.
Further, a first through hole is formed in one side, far away from the thin film capacitor, of the first positive electrode terminal, and an arc-shaped notch matched with the circumference of the first through hole is formed in one side, far away from the thin film capacitor, of the first negative electrode terminal; a second through hole with the same aperture as the first through hole is formed in one side, far away from the IGBT module, of the second negative electrode terminal, and an arc-shaped notch matched with the circumference of the second through hole is formed in one side, far away from the IGBT module, of the second positive electrode terminal; the first through hole and the second through hole are internally provided with screws, the screws are in insulating connection with the first laminated terminal and the second laminated terminal through insulating pressing sheets, and the bottoms of the screws are in threaded connection with preset positions.
Further, insulating blocks are arranged at the bottoms of the first negative electrode terminal and the second negative electrode terminal, and the first negative electrode terminal and the second negative electrode terminal are in insulating connection with the preset positions through the insulating blocks.
Further, the lower surface of the bottom of the heat dissipation assembly is fixedly connected with the upper surface of the top of the IGBT module, so that heat conduction is realized with the IGBT module.
Further, a rectangular groove-shaped cooling medium passage is formed in the upper portion of the heat dissipation assembly, a cooling medium inlet and a cooling medium outlet are formed in two opposite sides of the bottom of the heat dissipation assembly, one end of the cooling medium passage is communicated with the cooling medium inlet, and the other end of the cooling medium passage is communicated with the cooling medium outlet.
Further, a sealing colloid is arranged at the top of the heat dissipation assembly along the edge of the rectangular groove; and/or edges of the cooling medium inlet and the cooling medium outlet are provided with sealing colloid.
Further, the sealant is a two-component or multi-component chemical composite.
Further, the sealing colloid is a molded silicone rubber elastomer.
Further, the shielding plate is arranged above the IGBT module and the thin film capacitor and is fixedly connected with the thin film capacitor and the heat dissipation assembly respectively.
Further, the drive control assembly is arranged between the IGBT module and the shielding plate and is electrically connected with the IGBT module so as to control the output power of the IGBT module.
Further, the drive control assembly includes: the second circuit board, and the driving circuit module and the control circuit module which are arranged on the second circuit board; the second circuit board is fixedly arranged above the IGBT module and is electrically connected with the IGBT module.
Further, the drive control assembly includes: the driving circuit module comprises a second circuit board, a third circuit board, a driving circuit module and a control circuit module; the driving circuit module is arranged on the second circuit board; the control circuit module is arranged on the third circuit board; the second circuit board is fixedly arranged between the IGBT module and the shielding plate and is electrically connected with the IGBT module; the third circuit board is fixedly arranged above the shielding plate and is electrically connected with the IGBT module.
Further, a plurality of first heat dissipation units are arranged on the output copper bar of the thin film capacitor; the heat dissipation assembly comprises a radiator and a plurality of second heat dissipation units arranged on one side of the radiator; the first radiating units and the second radiating units are in one-to-one correspondence and are in heat conduction and insulation connection.
Further, the first heat dissipation unit comprises a first pin, the second heat dissipation unit comprises a second pin, and the first pin and the second pin are in one-to-one correspondence; the upper surface of the second pin is connected with the lower surface of the first heat dissipation pin through the first heat conduction insulating sheet; the bottom of the shielding plate is provided with a plurality of pre-tightening columns which are in one-to-one correspondence with the first radiating units, and the bottoms of the pre-tightening columns are connected with the upper surfaces of the first radiating pins through second heat conduction insulating sheets.
Further, the first pins comprise first positive pins and first negative pins which are arranged at intervals, the first positive pins are connected with the positive electrodes of the output copper bars, and the first negative pins are connected with the negative electrodes of the output copper bars.
Further, the power device further includes: the current detection assembly is arranged between the IGBT module and the shielding plate; the current detection assembly includes: the IGBT module comprises a first circuit board, a magnetic gathering part and a magnetic signal detection chip, wherein the magnetic gathering part is fixedly connected with the first circuit board in an insulating way, the magnetic signal detection chip is electrically connected with the first circuit board, and the first circuit board is fixedly connected with the IGBT module; the magnetic gathering component is of a notched annular structure, and the magnetic signal detection chip is arranged in the notch of the annular structure of the magnetic gathering component.
Further, the second output port is provided with a second output terminal, the second output terminal is in a columnar shape or a barrel shape arranged along the vertical direction, and the magnetic gathering component is sleeved on the second output terminal.
Further, the cross section of the second output terminal is circular, polygonal or annular.
The technical scheme provided by the embodiment of the invention has the following beneficial technical effects:
1. by adopting the universal package for the film capacitor and/or the IGBT module, the power electronic controller PEU can meet different power output requirements, and adopting the universal standard component, the repeated design of the power electronic controller PEU due to the change of output power is avoided, the universality of products is improved, and the design cost and the production cost of the power electronic controller PEU are greatly reduced.
2. Through adopting modular IGBT module, film electric capacity, drive control circuit, radiator unit, current detection subassembly and shield plate, improved the power density of power electronic controller PEU, effectively reduced risk, the degree of difficulty and the cycle of power electronic controller PEU development.
3. The integrated package of the power device is provided with a flexible direct current input interface, an alternating current output interface, a control circuit signal interface and a cooling medium passage interface, so that the power device can be flexibly applied to various electric drive configuration places in different power electronic controllers PEUs.
Drawings
FIG. 1a is a schematic diagram of a high output power generic package for a power module according to an embodiment of the present invention;
FIG. 1b is a schematic diagram of a low output power generic package for a power module according to an embodiment of the present invention;
fig. 2 is a front perspective view of a power module according to an embodiment of the present invention;
FIG. 3 is a rear perspective view of a power module according to an embodiment of the present invention;
FIG. 4 is an exploded view of a power module according to an embodiment of the present invention;
fig. 5 is a schematic perspective view of an IGBT module according to an embodiment of the invention;
FIG. 6 is a schematic diagram of connection between a thin film capacitor, a heat dissipation assembly and an IGBT module according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a thin film capacitor and an IGBT module connection terminal according to an embodiment of the present invention;
FIG. 8 is a schematic perspective view of a thin film capacitor according to an embodiment of the present invention;
fig. 9 is a schematic front perspective view of a heat dissipating assembly according to an embodiment of the present invention;
FIG. 10 is a schematic perspective view of a heat dissipating assembly according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of heat conduction at a connection end of a thin film capacitor and a heat dissipation assembly according to an embodiment of the present invention;
fig. 12 is a schematic structural diagram of a current detecting component according to an embodiment of the present invention.
In the accompanying drawings:
1. film capacitor, 11, film core, 12, output copper bar, 13, first output port, 131, first positive terminal, 1311, first through hole, 132, first negative terminal, 14, first heat dissipation unit, 141, first pin, 1411, first positive pin, 1412, first negative pin, 2, IGBT module, 21, die, 22, second input port, 221, second positive terminal, 222, second negative terminal, 2221, second through hole, 23, second output port, 231, second output terminal, 3, heat dissipation assembly, 31, heat sink, 311, cooling medium inlet, 312, cooling medium outlet, 32, second heat dissipation unit, 321, second pin, 4, drive control assembly, 41, second circuit board, 42, third circuit board, 5, shield plate, 51, pre-tightening post, 6, current detection assembly, 61, first circuit board, 62, magnetic gathering member, 63, magnetic signal detection chip, 71, first insulating sheet, 72, second heat conduction sheet, 73, heat conduction sheet, 74, compression sheet, insulating sheet 75, insulating sheet, and compression sheet.
Detailed Description
The objects, technical solutions and advantages of the present invention will become more apparent by the following detailed description of the present invention with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
Fig. 1a is a schematic diagram of a general package with high output power of a power module according to an embodiment of the present invention.
Fig. 1b is a schematic diagram of a low output power generic package of a power module according to an embodiment of the present invention.
Fig. 2 is a front perspective view of a power module according to an embodiment of the present invention.
Fig. 3 is a rear perspective view of a power module according to an embodiment of the present invention.
Fig. 4 is an exploded view of a power module according to an embodiment of the present invention.
Referring to fig. 1a, 1b, 2, 3 and 4, a power device of a general package includes: the IGBT module comprises a thin film capacitor 1, an IGBT module 2, a heat dissipation assembly 3, a driving control assembly 4 and a shielding plate 5. The thin film capacitor 1 and/or the IGBT module 2 are packaged in a common mode, and the dimension of the appearance of the thin film capacitor 1 and/or the IGBT module 2 is a preset value. The dimensions of the external shapes of the heat dissipation assembly 3, the drive control assembly 4 and the shielding plate 5 used in combination with the thin film capacitor 1 and/or the IGBT module 2 are preset values. A plurality of parallel thin film core 11 connecting positions are arranged in the thin film capacitor 1, and the number or the size of the thin film cores 11 is set according to the power output value of the power device. A plurality of connection sites of the chip bare chips 21 are arranged in the IGBT module 2, and the number or the size of the chip bare chips 21 is set according to the power output value of the power device.
As shown in fig. 1a and 1b, the power device adopts the same modular design for different output powers. By adopting the universal package for the film capacitor and/or the IGBT module, the power electronic controller PEU can meet different power output requirements, and adopting the universal standard component, the repeated design of the power electronic controller PEU due to the change of output power is avoided, the universality of products is improved, and the design cost and the production cost of the power electronic controller PEU are greatly reduced.
The IGBT module 2 is arranged above the heat dissipation assembly 3 and is fixedly connected with the heat dissipation assembly 3. The heat dissipation assembly 3 and the IGBT module 2 are arranged on one side of the thin film capacitor 1. The thin film capacitor 1 is respectively connected with the IGBT module 2 and the heat dissipation assembly 3.
Fig. 5 is a schematic perspective view of an IGBT module according to an embodiment of the invention.
Fig. 6 is a schematic diagram of connection between a thin film capacitor, a heat dissipation assembly and an IGBT module according to an embodiment of the present invention.
Fig. 7 is a schematic diagram of a thin film capacitor and an IGBT module connection terminal according to an embodiment of the present invention.
Fig. 8 is a schematic perspective view of a thin film capacitor according to an embodiment of the present invention.
Referring to fig. 5, 6 and 7, an output copper bar 12 is disposed on one side of the thin film capacitor 1, and at least one first output port 13 is disposed on the output copper bar 12; one side of the IGBT module 2 is provided with at least one second input port 22, and the other side is provided with second output ports 23 which are in one-to-one correspondence with the second input ports 22; the first output ports 13 are connected to the second input ports 22 in one-to-one correspondence.
The IGBT module 2 comprises three IGBT modules, two opposite sides of the IGBT modules are respectively provided with a second input port 22 and a second output port 23, and the second input port 22 is connected with the first output port 13 of the thin film capacitor 1; the second input ports 22 are all located on one side of the IGBT module 2, and the second output ports 23 are all located on the side of the IGBT module 2 opposite to the second input port 22 side.
The first output port 13 is a first stacked terminal including a first positive terminal 1341 each having a sheet-like structure and a first negative terminal 132 provided above the first positive terminal 131; the length of the first positive electrode terminal 131 in the horizontal direction is longer than the length of the first negative electrode terminal 132 in the horizontal direction; the first positive electrode terminal 131 and the first negative electrode terminal 132 are arranged to overlap in the vertical direction, and the first positive electrode terminal 131 and the first negative electrode terminal 132 are connected by an insulating sheet; the second input port 22 is a second laminated terminal used in cooperation with the first laminated terminal, the second laminated terminal includes a second positive electrode terminal 221 and a second negative electrode terminal 222 disposed below the second positive electrode terminal 221, the sum of the lengths of the second positive electrode terminal 221 and the first positive electrode terminal 131 is the same as the sum of the lengths of the second negative electrode terminal 222 and the first negative electrode terminal 132, the widths of the second positive electrode terminal 221 and the second negative electrode terminal 222 are the same, and the second positive electrode terminal 221 and the second negative electrode terminal 222 are connected through an insulating sheet. And the first laminated terminal and the second laminated terminal adopt laminated busbar, compared with the traditional copper bar terminal, the laminated busbar has large overlapping area and small current loop area, and can obviously reduce stray inductance, electromagnetic interference influence and peak voltage in the switching process of the IGBT module.
A first through hole 1311 is formed in one side, far away from the thin film capacitor 1, of the first positive electrode terminal 131, and an arc-shaped notch matched with the circumference of the first through hole 1311 is formed in one side, far away from the thin film capacitor 1, of the first negative electrode terminal 131; a second through hole 2211 with the same aperture as the first through hole 1311 is arranged on one side of the second negative electrode terminal 222 away from the IGBT module 2, and an arc notch matched with the circumference of the second through hole 2211 is arranged on one side of the second positive electrode terminal 221 away from the IGBT module 2; the first through hole 1311 and the second through hole 2221 are provided with screws 73, the screws 73 are connected with the first laminated terminal and the second laminated terminal in an insulating manner through insulating pressing pieces 74, and the bottoms of the screws 73 are connected with preset positions in a threaded manner. By fixing the screws 73 which are in insulating connection with the first laminated terminal and the second laminated terminal at preset positions, the first laminated terminal and the second laminated terminal are firmly connected, so that stable electrical performance is ensured, the influence on the performance stability of the PEU caused by virtual connection or disconnection of a circuit is avoided, and the driving safety factor is improved.
The bottoms of the first negative electrode terminal 132 and the second negative electrode terminal 222 are provided with an insulating block 75, and the first negative electrode terminal 132 and the second negative electrode terminal 222 are connected with a preset position in an insulating manner through the insulating block 75. The insulating block 75 realizes insulation between the bottoms of the first and second negative terminals 132 and 222 and the preset position for the fixing screw 73, prevents electrical communication between the first and second negative terminals 132 and 222 and the vehicle body, and improves the safety factor. In addition, the insulating block 75 also provides support for the connection position of the first laminated terminal and the second laminated terminal, and improves the stability of the connection structure of the two.
Fig. 9 is a schematic front perspective view of a heat dissipating assembly according to an embodiment of the present invention.
Fig. 10 is a schematic perspective view of a heat dissipating assembly according to an embodiment of the present invention.
Referring to fig. 9 and 10, the lower surface of the bottom of the heat dissipation component 3 is fixedly connected with the upper surface of the top of the IGBT module 2, so as to realize heat conduction with the IGBT module 2.
The upper part of the heat dissipation assembly 3 is provided with a rectangular groove-shaped cooling medium passage, two opposite sides of the bottom of the heat dissipation assembly 3 are provided with a cooling medium inlet 311 and a cooling medium outlet 312, one end of the cooling medium passage is communicated with the cooling medium inlet 311, and the other end is communicated with the cooling medium outlet 312.
The top of the heat radiation component 3 is provided with sealing colloid along the edge of the rectangular groove, the edge of the rectangular groove is coated with the sealing colloid by a dispensing machine to form a specific section size, and the sealing colloid is solidified to a certain size. After the IGBT module is connected with the radiator, the IGBT module and the radiator are compressed by using screws, and the sealing effect is ensured by compressing the preformed and solidified adhesive surface.
The edges of the cooling medium inlet 311 and the cooling medium outlet 312 are provided with sealing colloid, the edges of the cooling medium inlet 311 and the cooling medium outlet 312 are coated with the sealing colloid by a dispensing machine, are connected with a vehicle-mounted cooling water channel and are tightly pressed by screws, so that the sealing effect is ensured, and the problems of long solidifying time and the like caused by damage of a rubber ring or wet glue due to easy falling in the process of installing the rubber ring in the prior art are avoided.
Alternatively, the sealing gel is a bi-component or multi-component chemical composite, preferably the sealing gel is a molded silicone elastomer.
Referring to fig. 4, in an embodiment of the present invention, a driving control component 4 is disposed between the IGBT module 2 and the shielding plate 5 and electrically connected to the IGBT module 2 to control the output power of the IGBT module 2.
In another implementation of the embodiment of the present invention, the drive control assembly 4 includes: a second circuit board 41, a third circuit board 42, a driving circuit module, and a control circuit module; the driving circuit module is disposed on the second circuit board 41; the control circuit module is arranged on the third circuit board 42; the second circuit board 41 is fixedly arranged between the IGBT module 2 and the shielding plate 5, and is electrically connected with the IGBT module 2; the third circuit board 42 is fixedly disposed above the shielding plate 5 and electrically connected to the IGBT module 2.
The shielding plate 5 is arranged above the IGBT module 2 and the thin film capacitor 1 and is fixedly connected with the thin film capacitor 1 and the heat dissipation assembly 3 respectively.
Fig. 11 is a schematic diagram of heat conduction at a connection end of a thin film capacitor and a heat dissipation assembly according to an embodiment of the present invention.
Referring to fig. 8 and 11, a plurality of first heat dissipation units 14 are disposed on an output copper bar 12 of the thin film capacitor 1; the heat dissipation assembly 3 comprises a heat radiator 31 and a plurality of second heat dissipation units 32 arranged on one side of the heat radiator 31; the first heat dissipation units 14 are in one-to-one correspondence with the second heat dissipation units 32 and are in heat conduction and insulation connection. Through the connection of the first heat dissipation unit 14 and the second heat dissipation unit 32, the heat conducted to the thin film capacitor 1 by the IGBT module 2 and the heat generated by the thin film capacitor 1 are conducted into the heat dissipation assembly 3, so that the temperature of the thin film capacitor 1 is reduced, the performance of the thin film capacitor 1 is improved, and the service life of the thin film capacitor 1 is prolonged.
The first heat dissipation unit 14 includes a first pin 141, the second heat dissipation unit 32 includes a second pin 321, and the first pin 141 corresponds to the second pin 321 one by one; the upper surface of the second pin 321 is connected with the lower surface of the first heat dissipation pin 141 through the first heat conductive insulating sheet 71; the shielding plate 5 is provided with a plurality of pre-tightening posts 51 corresponding to the first heat dissipation units 14 one by one at the bottom, and the bottoms of the pre-tightening posts 51 are connected with the upper surfaces of the first heat dissipation pins 141 through the second heat conduction insulating sheets 72. The pre-tightening column 51 and the second pin 321 are respectively connected with the first pin 141 in an insulating and heat-conducting manner through insulating materials, and are connected with the first pin 141 from the upper surface and the lower surface of the first pin 141, so that the first pin 141 and the second pin 321 are ensured to be connected in an effective heat-conducting manner, the problem that the heat dissipation capacity is reduced or the heat dissipation function cannot be realized due to the fact that a heat conduction connecting component is loosened or the position is shifted due to vibration or impact is avoided, and the stability of a heat dissipation structure is improved.
The first pins 141 include first positive pins 1411 and first negative pins 1412 which are arranged at intervals, the first positive pins 1411 are connected with the positive poles of the output copper bars 12, and the first negative pins 1412 are connected with the negative poles of the output copper bars 12. The first pins 141 respectively connected with the positive electrode and the negative electrode of the output copper bar 12 of the thin film capacitor 1 are connected with the second pin 321 of the heat dissipation assembly 3, so that the positive electrode and the negative electrode of the output copper bar 12 of the thin film capacitor 1 are cooled simultaneously, the heat dissipation effect on the thin film capacitor 1 is improved, and the performance of the thin film capacitor 1 is improved.
Fig. 12 is a schematic structural diagram of a current detecting component according to an embodiment of the present invention.
The power device further includes: a current detection module 6 disposed between the IGBT module 2 and the shield plate 5; the current detection assembly 6 includes: the first circuit board 61, the magnetic gathering component 62 which is fixedly connected with the first circuit board 61 in an insulating way, and the magnetic signal detection chip 63 which is electrically connected with the first circuit board 61, wherein the first circuit board 61 is fixedly connected with the IGBT module 2; the magnetic gathering member 62 has a ring-shaped structure with a notch, and the magnetic signal detection chip 63 is disposed in the notch of the ring-shaped structure of the magnetic gathering member 62.
The second output port 23 is provided with a second output terminal 231, and the second output terminal 231 is in a columnar or barrel shape arranged along the vertical direction, and the magnetic gathering component 62 is sleeved on the second output terminal 231.
By setting up a cylindrical output conductor at the ac output end of the IGBT module 2, the magnetic field change caused by the IGBT module 2 output current change is detected by using the magnetic gathering member 62, the magnetic signal change value is calculated by the magnetic signal detection chip 63, and the three-phase ac output current value of the IGBT module is calculated. In addition, through the integrated vertical current detection component 6, the transverse space of the power device is saved, the space utilization rate is increased, and the power density is improved.
Alternatively, the second output terminal 231 has a circular, polygonal, or ring-shaped cross section; preferably, the second output terminal 231 has a circular cross section.
In summary, the present invention is directed to a power device with a general package, comprising: the device comprises a thin film capacitor, an IGBT module, a heat dissipation assembly, a driving control assembly and a shielding plate; the thin film capacitor and/or the IGBT module adopts universal packaging, and the dimension of the appearance of the thin film capacitor and/or the IGBT module is a preset value; the dimensions of the external shapes of the heat dissipation assembly, the driving control assembly and the shielding plate, which are used in combination with the thin film capacitor and/or the IGBT module, are preset values; a plurality of parallel thin film core connection positions are arranged in the thin film capacitor, and the number or the size of the thin film cores is set according to the power output value of the power device; and a plurality of chip bare chip connecting positions are arranged in the IGBT module, and the number or the size of the chip bare chips is set according to the power output value of the power device. The technical scheme of the invention has the following effects:
1. by adopting the universal package for the film capacitor and/or the IGBT module, the power electronic controller PEU can meet different power output requirements, and adopting the universal standard component, the repeated design of the power electronic controller PEU due to the change of output power is avoided, the universality of products is improved, and the design cost and the production cost of the power electronic controller PEU are greatly reduced.
2. Through adopting modular IGBT module, film electric capacity, drive control circuit, radiator unit, current detection subassembly and shield plate, improved the power density of power electronic controller PEU, effectively reduced risk, the degree of difficulty and the cycle of power electronic controller PEU development.
3. The integrated package of the power device is provided with a flexible direct current input interface, an alternating current output interface, a control circuit signal interface and a cooling medium passage interface, so that the power device can be flexibly applied to various electric drive configuration places in different power electronic controllers PEUs.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explanation of the principles of the present invention and are in no way limiting of the invention. Accordingly, any modification, equivalent replacement, improvement, etc. made without departing from the spirit and scope of the present invention should be included in the scope of the present invention. Furthermore, the appended claims are intended to cover all such changes and modifications that fall within the scope and boundary of the appended claims, or equivalents of such scope and boundary.

Claims (21)

1. A power device of a universal package, comprising: the device comprises a thin film capacitor (1), an IGBT module (2), a heat dissipation assembly (3), a driving control assembly (4) and a shielding plate (5);
the thin film capacitor (1) and/or the IGBT module (2) are/is packaged in a common mode, and the dimension of the appearance of the thin film capacitor (1) and/or the IGBT module (2) is a preset value;
the dimensions of the external shapes of the heat dissipation assembly (3), the driving control assembly (4) and the shielding plate (5) which are combined with the thin film capacitor (1) and/or the IGBT module (2) are preset values;
a plurality of parallel thin film core (11) connecting positions are arranged in the thin film capacitor (1), and the number or the size of the thin film cores (11) is set according to the power output value of the power device;
a plurality of chip bare chip (21) connecting positions are arranged in the IGBT module (2), and the number or the size of the chip bare chips (21) is set according to the power output value of the power device;
the IGBT module (2) is arranged above the heat dissipation assembly (3) and is fixedly connected with the heat dissipation assembly (3);
the shielding plate (5) is arranged above the IGBT module (2) and the thin film capacitor (1) and is fixedly connected with the thin film capacitor (1) and the heat dissipation assembly (3) respectively.
2. The power device of claim 1, wherein,
the heat dissipation assembly (3) and the IGBT module (2) are arranged on one side of the thin film capacitor (1);
the thin film capacitor (1) is respectively connected with the IGBT module (2) and the heat dissipation assembly (3).
3. The power device of claim 1, wherein,
an output copper bar (12) is arranged on one side of the thin film capacitor (1), and at least one first output port (13) is arranged on the output copper bar (12);
one side of the IGBT module (2) is provided with at least one second input port (22), and the other side of the IGBT module is provided with second output ports (23) which are in one-to-one correspondence with the second input ports (22);
the first output ports (13) are connected with the second input ports (22) in a one-to-one correspondence mode.
4. The power device of claim 1, wherein,
the IGBT module (2) comprises one or more IGBT modules, and a second input port (22) and a second output port (23) are respectively arranged on two opposite sides of the IGBT modules;
the second input ports (22) are all located on one side of the IGBT module (2), and the second output ports (23) are all located on the side, opposite to the second input ports (22), of the IGBT module (2).
5. A power plant as claimed in claim 3, characterized in that,
the first output port (13) is a first laminated terminal, and the first laminated terminal comprises a first positive electrode terminal (131) with a sheet-shaped structure and a first negative electrode terminal (132) arranged above the first positive electrode terminal (131); the length of the first positive electrode terminal (131) in the horizontal direction is longer than the length of the first negative electrode terminal (132) in the horizontal direction; the first positive electrode terminal (131) and the first negative electrode terminal (132) are arranged in an overlapping manner in the vertical direction, and the first positive electrode terminal (131) and the first negative electrode terminal (132) are connected through an insulating sheet;
the second input port (22) is a second laminated terminal matched with the first laminated terminal, the second laminated terminal comprises a second positive terminal (221) and a second negative terminal (222), the second positive terminal (221) and the second negative terminal (222) are both of a sheet-shaped structure, the sum of the lengths of the second positive terminal (221) and the first positive terminal (131) is the same as the sum of the lengths of the second negative terminal (222) and the first negative terminal (132), the widths of the second positive terminal (221) and the second negative terminal (222) are the same, and the second positive terminal (221) and the second negative terminal (222) are connected through an insulating sheet.
6. The power device of claim 5, wherein,
a first through hole (1311) is formed in one side, far away from the thin film capacitor (1), of the first positive electrode terminal (131), and an arc-shaped notch matched with the circumference of the first through hole (1311) is formed in one side, far away from the thin film capacitor (1), of the first negative electrode terminal (131);
a second through hole (2211) with the same aperture as the first through hole (1311) is arranged on one side, away from the IGBT module (2), of the second negative electrode terminal (222), and an arc-shaped notch matched with the circumference of the second through hole (2211) is arranged on one side, away from the IGBT module (2), of the second positive electrode terminal (221);
screws (73) are arranged in the first through holes (1311) and the second through holes (2221), and the screws (73) are connected with the first laminated terminal and the second laminated terminal in an insulating mode through insulating pressing pieces (74).
7. The power device of claim 6, wherein,
the bottoms of the first negative electrode terminal (132) and the second negative electrode terminal (222) are provided with insulating blocks (75), and the first negative electrode terminal (132) and the second negative electrode terminal (222) are in insulating connection with preset positions through the insulating blocks (75).
8. The power device of claim 2, wherein,
the lower surface of the bottom of the heat dissipation assembly (3) is fixedly connected with the upper surface of the top of the IGBT module (2) so as to realize heat conduction with the IGBT module (2).
9. The power device of claim 8, wherein the power device comprises a power source,
the cooling device is characterized in that a rectangular groove-shaped cooling medium passage is formed in the upper portion of the cooling assembly (3), a cooling medium inlet (311) and a cooling medium outlet (312) are formed in two opposite sides of the bottom of the cooling assembly (3), one end of the cooling medium passage is communicated with the cooling medium inlet (311), and the other end of the cooling medium passage is communicated with the cooling medium outlet (312).
10. The power device of claim 9, wherein the power device comprises a power source,
the top of the heat dissipation assembly (3) is provided with sealing colloid along the edge of the rectangular groove; and/or
The edges of the cooling medium inlet (311) and the cooling medium outlet (312) are provided with sealing colloid.
11. The power device of claim 10, wherein the power device comprises a power source,
the sealing colloid is a bi-component or multi-component chemical synthesis body.
12. The power device of claim 11, wherein the power device comprises a power source,
the sealing colloid is a formed silicon rubber elastomer.
13. The power device of claim 1, wherein,
the driving control assembly (4) is arranged between the IGBT module (2) and the shielding plate (5) and is electrically connected with the IGBT module (2) so as to control the output power of the IGBT module (2).
14. The power device of claim 13, wherein the power device comprises a power source,
the drive control assembly (4) includes: the second circuit board (41) and a driving circuit module and a control circuit module which are arranged on the second circuit board (41);
the second circuit board (41) is fixedly arranged above the IGBT module (2) and is electrically connected with the IGBT module (2).
15. The power device of claim 13, wherein the power device comprises a power source,
the drive control assembly (4) includes: a second circuit board (41), a third circuit board (42), a driving circuit module and a control circuit module;
the driving circuit module is arranged on the second circuit board (41);
the control circuit module is arranged on the third circuit board (42);
the second circuit board (41) is fixedly arranged between the IGBT module (2) and the shielding plate (5) and is electrically connected with the IGBT module (2);
the third circuit board (42) is fixedly arranged above the shielding plate (5) and is electrically connected with the IGBT module (2).
16. The power device of claim 1, wherein,
a plurality of first radiating units (14) are arranged on the output copper bar (12) of the thin film capacitor (1);
the heat dissipation assembly (3) comprises a heat radiator (31) and a plurality of second heat dissipation units (32) arranged on one side of the heat radiator (31);
the first radiating units (14) are in one-to-one correspondence with the second radiating units (32) and are in heat conduction and insulation connection.
17. The power device of claim 16, wherein the power device comprises a power source,
the first heat dissipation unit (14) comprises first pins (141), the second heat dissipation unit (32) comprises second pins (321), and the first pins (141) and the second pins (321) are in one-to-one correspondence;
the upper surface of the second pin (321) is connected with the lower surface of the first heat dissipation pin (141) through the first heat conduction insulating sheet (71);
the bottom of the shielding plate (5) is provided with a plurality of pre-tightening columns (51) which are in one-to-one correspondence with the first radiating units (14), and the bottom of the pre-tightening columns (51) is connected with the upper surfaces of the first radiating pins (141) through second heat conducting insulating sheets (72).
18. The power device of claim 17, wherein the power device comprises a power source,
the first pins (141) comprise first positive pins (1411) and first negative pins (1412) which are arranged at intervals, the first positive pins (1411) are connected with the positive electrodes of the output copper bars (12), and the first negative pins (1412) are connected with the negative electrodes of the output copper bars (12).
19. The power device of claim 1, further comprising: a current detection assembly (6) arranged between the IGBT module (2) and the shielding plate (5);
the current detection assembly (6) comprises: the IGBT module comprises a first circuit board (61), a magnetic gathering component (62) which is fixedly connected with the first circuit board (61) in an insulating way, and a magnetic signal detection chip (63) which is electrically connected with the first circuit board (61), wherein the first circuit board (61) is fixedly connected with the IGBT module (2);
the magnetic gathering component (62) is of a notched annular structure, and the magnetic signal detection chip (63) is arranged in the notch of the annular structure of the magnetic gathering component (62).
20. The power device of claim 19, wherein the power device comprises a power source,
the second output port (23) of the IGBT module (2) is provided with a second output terminal (231), the second output terminal (231) is in a columnar shape or a barrel shape arranged along the vertical direction, and the magnetic gathering component (62) is sleeved on the second output terminal (231).
21. The power device of claim 20, wherein the power device comprises a power source,
the second output terminal (231) has a circular, polygonal or annular cross section.
CN201811088479.3A 2018-09-18 2018-09-18 Universal packaged power device Active CN109217636B (en)

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