CN110335864A - A kind of power modules - Google Patents

A kind of power modules Download PDF

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Publication number
CN110335864A
CN110335864A CN201910599763.5A CN201910599763A CN110335864A CN 110335864 A CN110335864 A CN 110335864A CN 201910599763 A CN201910599763 A CN 201910599763A CN 110335864 A CN110335864 A CN 110335864A
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CN
China
Prior art keywords
electrode conductive
bridge arm
conductive bar
conductive layer
output electrode
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910599763.5A
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Chinese (zh)
Inventor
徐文辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Yitong Power Electronics Co Ltd
Original Assignee
Shenzhen Yitong Power Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Yitong Power Electronics Co Ltd filed Critical Shenzhen Yitong Power Electronics Co Ltd
Publication of CN110335864A publication Critical patent/CN110335864A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601Structure
    • H01L2224/0603Bonding areas having different sizes, e.g. different heights or widths
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The present invention provides a kind of power modules, comprising: several power modules, first and second capacitance electrode conductive layer, filter capacitor, Absorption Capacitance.Power module includes insulating substrate, first and second bridge arm conductive layer on insulating substrate is set, multiple first bridge arm power chips on first bridge arm conductive layer are set, multiple second bridge arm power chips on second bridge arm conductive layer are set, the first bridge arm electrode conducting layer on insulating substrate is set, first electrode conductive bar on first bridge arm electrode conducting layer is set, second electrode conductive bar on second bridge arm conductive layer is set, output electrode conductive layer on insulating substrate is set, output electrode conductive bar on output electrode conductive layer is set;Multiple first bridge arm power chips are electrically connected with the first bridge arm electrode conducting layer respectively, and the first bridge arm conductive layer is electrically connected with output electrode conductive layer, and multiple second bridge arm power chips are electrically connected with output electrode conductive layer respectively.

Description

A kind of power modules
Technical field
The present invention relates to electron electric power technical fields, and in particular to be a kind of power modules.
Background technique
Power modules are generally made of multiple power modules, and power module is power electronic electrical device such as metal oxide Semiconductor (power MOS pipe), insulated-gate type field effect transistor (IGBT), fast recovery diode (FRD) press certain functional group The power switch module that is packaged into is closed, is mainly used for electric car, wind-power electricity generation, the power under the various occasions such as industrial frequency conversion Conversion.
The motor-drive circuit of electric car generally includes three groups of power modules, the three-phase alternating-current supply provided for motor. And motor is during the work time, since motor is inductive load, and the parasitic inductance of existing power module opening in power module Oscillating waveform is generated during closing, and influences the accurate behavior in service of motor.
Summary of the invention
The purpose of the present invention is to solve the above problems, provide a kind of power modules including several power modules, change The wiring of Variable power module is arranged, the parasitic inductance of power module is effectively reduced.
The present invention provides a kind of power modules, including several power modules, first capacitor electrode conducting layer, the second capacitor Electrode conducting layer, filter capacitor, Absorption Capacitance;Each power module includes insulating substrate, be arranged on insulating substrate first Bridge arm conductive layer, the multiple first bridge arm power chips being arranged on the first bridge arm conductive layer, be arranged on insulating substrate Two bridge arm conductive layers, are arranged on insulating substrate the multiple second bridge arm power chips being arranged on the second bridge arm conductive layer First bridge arm electrode conducting layer, is arranged in the second bridge arm the first electrode conductive bar being arranged on the first bridge arm electrode conducting layer Second electrode conductive bar on conductive layer, the output electrode conductive layer being arranged on insulating substrate 1, setting are in output electrode conduction Output electrode conductive bar on layer;Multiple first bridge arm power chips are electrically connected with the first bridge arm electrode conducting layer respectively, described First bridge arm conductive layer is electrically connected with output electrode conductive layer, multiple second bridge arm power chips respectively with output electrode conductive layer Electrical connection;Wherein, first electrode conductive bar is disposed adjacent with multiple first bridge arm power chips, and along multiple first bridge arm power The arrangement path of chip extends, and second electrode conductive bar is disposed adjacent with multiple second bridge arm power chips, and along multiple second The arrangement path of bridge arm power chip extends;The first capacitor electrode conducting layer and the second capacitance electrode conductive layer lamination are set It sets, the filter capacitor is electrically connected between first capacitor electrode conducting layer and the second capacitance electrode conductive layer, the absorption electricity Appearance be electrically connected between first capacitor electrode conducting layer and the second capacitance electrode conductive layer, the first capacitor electrode conducting layer with The electrical connection of first electrode conductive bar, the second capacitance electrode conductive layer are electrically connected with second electrode conductive bar.
Further, the multiple second bridge arm power chip is electrically connected with the first bridge arm conductive layer, and then is able to and institute State the electrical connection of output electrode conductive layer.
Further, the first electrode conductive bar and second electrode conductive bar are symmetrically arranged contour frame shape copper Item, opening the first bridge arm power chip of direction of the first electrode conductive bar, the opening direction of the second electrode conductive bar Second bridge arm power chip.
Further, the periphery of the insulating substrate is fixedly installed outline border, is located at the first electricity in the side of the outline border Offer side through-hole on the position of pole conductive bar and second electrode conductive bar, the side through-hole and first electrode conductive bar, The shape of second electrode conductive bar is corresponding, and the size of the side through-hole is greater than the size of first and second electrodes conduct item, First and second described electrodes conduct item is respectively arranged in the side through-hole, the top of first and second electrodes conduct item Hold the upper surface above outline border.
Further, the power module further includes gate pole end tab, and the gate pole end tab is set to first and second Between bridge arm power chip and output electrode conductive layer, the output electrode conductive layer is in frame shape, and the gate pole end tab is located at In the frame shape opening of output electrode conductive layer.
Further, the output electrode conductive bar is frame shape, and is matched with the shape of output electrode conductive layer, described The front end of outline border, which is located on the position of output electrode conductive bar, offers front through hole, the front through hole and output electrode conductive bar Shape is corresponding, and the size of the front through hole is greater than the size of output electrode conductive bar, and the output electrode conductive bar is set to In the front through hole, and its top is above the upper surface of outline border.
Further, the first electrode conductive bar and second electrode conductive bar are symmetrically arranged contour vertical bar shaped copper Item.
Further, the output electrode conductive bar includes two vertical bar shaped conductive bars, two vertical bar shaped conductive bars point It is not set on two arms of the frame shape of output electrode conductive layer, is located at the position of output electrode conductive bar in the front end of the outline border It sets and opens up there are two front-side through-hole, the front-side through-hole is vertical bar shaped, and its size is greater than the size of output electrode conductive bar, The output electrode conductive bar is set in the front-side through-hole, and the top of the output electrode conductive bar is above outline border Upper surface.
Further, the output electrode conductive bar includes two Ring-cylindrical conductive bars, which sets It sets in the two sides of the frame shape of output electrode conductive layer, is opened up on the position that the front end of the outline border is located at output electrode conductive bar Two circular through holes, the size of the circular through hole are greater than the size of output electrode conductive bar, and the output electrode conductive bar is set It is placed in the circular through hole, and its top is above the upper surface of outline border.
Further, the upper end of the first electrode conductive bar, second electrode conductive bar and output electrode conductive bar is contour.
Further, the first bridge arm power chip, the second bridge arm power chip are single tube encapsulation chip, and described the One and second bridge arm power chip be each formed with gate pole, source electrode and heat dissipation drain electrode.
Further, the first electrode conductive bar and/or second electrode conductive bar are to be extended continuously shape.
Further, the centre of the first electrode conductive bar and/or second electrode conductive bar include at least one every It is disconnected.
Further, the centre of the output electrode conductive bar includes at least one partition.
Further, the power modules further include radiator, and several power modules are set on radiator.
Further, the power modules further include capacitor board, the first capacitor electrode conducting layer and the second capacitor electricity Pole conductive layer is all set on capacitor board.
Further, the power modules further include several pressing plates, and the capacitor board passes through several pressing plates and radiator phase It is fixed.
Power module included by power modules of the present invention is drawn by metal copper bar as module electrodes, or weldering It connects or crimps, facilitate installation, and the module area of conductive bar is small, the parasitic inductance of module can be effectively reduced.
Detailed description of the invention
Fig. 1 is a kind of perspective view of the explosion of the better embodiment of power modules provided by the invention.
Fig. 2 is the structural schematic diagram of the capacitor board of power modules in Fig. 1.
Fig. 3 is the structural schematic diagram in Fig. 1 after power modules installation.
Fig. 4 is the schematic elevation view of the embodiment one of power module in Fig. 1.
Fig. 5 is the stereoscopic schematic diagram of power module in Fig. 4.
Fig. 6 is the stereoscopic schematic diagram in Fig. 4 after power module installation outline border.
Fig. 7 is the explosive view of power module in Fig. 6.
Fig. 8 is the stereoscopic schematic diagram of the embodiment two of power module in Fig. 1.
Fig. 9 is the stereoscopic schematic diagram in Fig. 8 after power module installation outline border.
Figure 10 is the explosive view of power module in Fig. 9.
Figure 11 is the schematic elevation view of the embodiment three of power module in Fig. 1.
Figure 12 is the perspective view of power module in Figure 11.
Figure 13 is the stereoscopic schematic diagram of the example IV of power module in Fig. 1.
Figure 14 is the schematic elevation view of the embodiment five of power module in Fig. 1.
Figure 15 is the perspective view of power module in Figure 14.
Figure 16 is the perspective view of the embodiment six of power module in Fig. 1.
Specific embodiment
The embodiment of the present invention is described in detail with reference to the accompanying drawing, it should be understood that specific implementation described herein Example is used only for explaining the present invention, is not intended to limit the present invention.
Please continue to refer to shown in Fig. 1,2, a kind of power modules 200 provided by the present invention include several power modules 100 (for motor, three-phase alternating current will form a three-phase bridge power modules by three power modules, therefore in Fig. 1-2 Illustrate only three power modules, also may include the power module of other quantity in other embodiments), first capacitor electrode leads Electric layer 15, the second capacitance electrode conductive layer 16, filter capacitor 17, Absorption Capacitance 18, radiator 14, capacitor board 18, pressing plate 19.Its In, the first capacitor electrode conducting layer 15 and the setting of 16 lamination of the second capacitance electrode conductive layer, the filter capacitor 17 are electrically connected It is connected between first capacitor electrode conducting layer 15 and the second capacitance electrode conductive layer 16, the Absorption Capacitance 18 is electrically connected to first Between capacitance electrode conductive layer 15 and the second capacitance electrode conductive layer 16, the first capacitor electrode conducting layer 15 and first electrode Conductive bar 7 is electrically connected, and the second capacitance electrode conductive layer 16 is electrically connected with second electrode conductive bar 70, the first capacitor electricity Pole conductive layer 15 and the second capacitance electrode conductive layer 16 are all set on capacitor board 18.
100 laid out in parallel of several power modules is set on radiator 14, and the capacitor board 18 passes through several pressing plates 19 fix with 14 phase of radiator, so that first capacitor electrode conducting layer 15 is electrically connected with the first electrode conductive bar 7 on power module It connects, the second capacitance electrode conductive layer 15 is electrically connected with the second electrode conductive bar 70 on power module.The first capacitor electrode First electrode conductive bar 7 and second in the quantity of conductive layer 15 and the second capacitance electrode conductive layer 16 and position and power module The quantity of the position of electrodes conduct item 70 is corresponding.
It is fastened specifically, the pressing plate 19 passes through capacitor board 18 by several screws with the screw hole on radiator 14, Three power modules of three phase power mould group realize firm fastening by four block pressur plates 19.
Continuing with referring to attached drawing 3, for the power modules 200 after being installed.As can be seen that the power mould after being installed Group 200 is compact-sized, can farthest reduce parasitic inductance.
Continuing with referring to fig. 4 and 5, the first better embodiment of power module 100 included by the power modules 200 Including insulating substrate 1, the first bridge arm conductive layer 2 being arranged on insulating substrate 1, be arranged in it is more on the first bridge arm conductive layer 2 5 the first bridge arm power chips are only shown in a first bridge arm power chip 3(Fig. 4 and Fig. 5), be arranged on insulating substrate 1 Second bridge arm conductive layer 4 is arranged in multiple second bridge arm power chip 5(Fig. 4 and Fig. 5 on the second bridge arm conductive layer 4 and only shows 5 the second bridge arm power chips out), the first bridge arm electrode conducting layer 6 for being arranged on insulating substrate 1, be arranged in the first bridge arm First electrode conductive bar 7 on electrode conducting layer 6, the second electrode conductive bar 70 being arranged on the second bridge arm conductive layer 4, setting In the output electrode conductive layer 8 on insulating substrate 1, the output electrode conductive bar 9 that is arranged on output electrode conductive layer 8.Wherein, The multiple first bridge arm power chip 3 is electrically connected with the first bridge arm electrode conducting layer 6 respectively, the first bridge arm conductive layer 2 It is electrically connected that (in present embodiment, the first bridge arm conductive layer 2 can be with output electrode conductive layer 8 with output electrode conductive layer 8 One entirety, certainly, the first bridge arm conductive layer 2 described in other embodiments can also separate system with output electrode conductive layer 8 Make), multiple second bridge arm power chips 5 are electrically connected with output electrode conductive layer 8 respectively;Wherein, first electrode conductive bar 7 and more A first bridge arm power chip 3 is disposed adjacent, and is extended along the arrangement path of multiple first bridge arm power chips 3, second electrode Conductive bar 70 is disposed adjacent with multiple second bridge arm power chips 5, and is prolonged along the arrangement path of multiple second bridge arm power chips 5 It stretches.
When work, driving current flows to the second bridge arm conductive layer 4 from second electrode conductive bar 70, then successively flows to described The drain electrode of two bridge arm power chips 5 and source electrode are transmitted to the first bridge arm conductive layer 2, flow to output electrode conductive layer 8 again later, It is exported later via output electrode conductive bar 9.Freewheel current is inputted from the first electrode conductive bar 7, via the first bridge arm electricity Pole conductive layer 6 flows to source electrode and the drain electrode of the first bridge arm power chip 3, successively flows to the first bridge arm conductive layer 2 and defeated again later Electrode conducting layer 8 out are finally exported via output electrode conductive bar 9.
In present embodiment, the multiple second bridge arm power chip 5 is electrically connected with the first bridge arm conductive layer 2, and then To be electrically connected with the output electrode conductive layer 8.
Please continue to refer to shown in Fig. 6 and Fig. 7, the first electrode conductive bar 7 is symmetrically to set with second electrode conductive bar 70 The opening of the contour frame shape copper bar set, the first electrode conductive bar 7 is electric towards the first bridge arm power chip 3, described second Opening the second bridge arm power chip 5 of direction of pole conductive bar 70.The periphery of the insulating substrate 1 is fixedly installed outline border 10, The side of the outline border 10, which is located on the position of first electrode conductive bar 7 and second electrode conductive bar 70, offers side through-hole 11, the side through-hole 11 is corresponding with the shape of first electrode conductive bar 7, second electrode conductive bar 70, the side through-hole 11 size is greater than the size of first and second electrodes conduct item, first and second described electrodes conduct item is respectively arranged at described In side through-hole 11, the upper surface of the top of first and second electrodes conduct item above outline border 10.
The output electrode conductive bar 9 is frame shape, and is matched with the shape of output electrode conductive layer 8, in the outline border 10 Front end be located on the position of output electrode conductive bar 9 and offer front through hole 13, the front through hole 13 and output electrode conductive bar 9 Shape it is corresponding, the size of the front through hole 13 is greater than the size of output electrode conductive bar 9, the output electrode conductive bar 9 It is set in the front through hole 13, and its top is above the upper surface of outline border 10.
The power module 100 further includes gate pole end tab 12, and the gate pole end tab 12 is set to first and second bridge Between arm power chip and output electrode conductive layer 8, the output electrode conductive layer 8 is in frame shape, the gate pole end tab 12 In in the frame shape opening of output electrode conductive layer 8.
It is the schematic diagram of the second better embodiment of the power module 100 please continue to refer to shown in Fig. 8-Figure 10, The difference of itself and first embodiment is that the first electrode conductive bar 7 and second electrode conductive bar 70 are symmetrically arranged Contour vertical bar shaped copper bar, the output electrode conductive layer 8 are also vertical bar shaped copper bar.At this point, two vertical bar shaped conductive bars point It is not set on two arms of the frame shape of output electrode conductive layer 8, is located at output electrode conductive bar 9 in the front end of the outline border 10 Position on open up there are two front-side through-hole 14, the front-side through-hole 14 is vertical bar shaped, and to be greater than output electrode conductive for its size The size of item 9, the output electrode conductive bar 9 are set in the front-side through-hole 14, and the top of the output electrode conductive bar 9 Hold the upper surface above outline border 10.
It is the schematic diagram of the third better embodiment of the power module please continue to refer to shown in Figure 11 and Figure 12, The difference of itself and the second better embodiment is, the output electrode conductive bar 9 includes two Ring-cylindrical conductive bars, this two The two sides of the frame shape of output electrode conductive layer 8 are arranged in Ring-cylindrical conductive bar, are located at output electrode in the front end of the outline border 10 Two circular through holes are opened up on the position of conductive bar 9, the size of the circular through hole is greater than the size of output electrode conductive bar 9, The output electrode conductive bar 9 is set in the circular through hole, and its top is above the upper surface of outline border 10.
In the present invention, the upper end of the first electrode conductive bar 7, second electrode conductive bar 70 and output electrode conductive bar 9 It is contour.In addition, the positive electrode conductive bar 6, negative electrode conductive bar 7 and output electrode conductive bar 9 can also use other classes As shape, based on vertical bar or column structure, for reducing the generation of inductance.Certainly, when the structure of the outline border 10 also needs To be changed according to the shape of conductive bar and make corresponding variation.
The output electrode conductive bar 9 can also be substituted with Wiring nose, directly be drawn from output electrode conductive layer 8.Institute The connection between first electrode conductive bar 7, second electrode conductive bar 70 and output electrode conductive bar 9 and conductive layer is stated to crimp Based on, or by conducting resinl, or good conduction property is reached by welding form.Lead between the outline border 10 and insulating substrate 1 It crosses gluing or joggle is realized and fixed.
It is the schematic diagram of the 4th better embodiment of the power module please continue to refer to shown in Figure 13, described the One bridge arm power chip, the second bridge arm power chip are single tube encapsulation chip, i.e., the described first bridge arm power chip and second The outside of bridge arm power chip is enclosed with one layer of resin, then draws pin and is electrically connected with external circuit.Shown in Figure 13 To encapsulate the power module after chip package using single tube.After the completion of encapsulation, the bridge arm power chip forms gate pole 20, source electrode 22 and heat dissipation drain electrode 23, to be electrically connected with other circuits.
Please continue to refer to shown in Figure 14 and Figure 15, in the 5th better embodiment of power module of the present invention, institute State first electrode conductive bar 7, second electrode conductive bar 70 is divided into two sections (can also be divided into multistage in other embodiments), such as This can reduce the thermal stress between electrode and insulating substrate, reduce insulating substrate in the case where not influencing conductive capability Thermal deformation, the module that this structure butt welding connects strip electrode are especially advantageous.In other embodiments, the first electrode conductive bar 7 And second electrode conductive bar 70 can be extended continuously, and in-between include at least has a partition.
Please continue to refer to shown in Figure 16, in the 6th better embodiment of power module of the present invention, the output Electrodes conduct item 9 is divided into two sections (can also be divided into multistage in other embodiments), can so not influence conductive capability In the case where, reduce the thermal stress between electrode and insulating substrate, reduces the thermal deformation of insulating substrate, this structure butt welding narrow bars shape The module of electrode is especially advantageous.In other embodiments, the output electrode conductive bar 9 can be extended continuously, and wherein Between include at least have a partition.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all utilizations Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content is applied directly or indirectly in other correlations Technical field, be included within the scope of the present invention.

Claims (17)

1. a kind of power modules, it is characterised in that: including several power modules, first capacitor electrode conducting layer, the second capacitor electricity Pole conductive layer, filter capacitor, Absorption Capacitance;Each power module includes insulating substrate, the first bridge being arranged on insulating substrate Arm conductive layer, be arranged on the first bridge arm conductive layer it is multiple first bridge arm power chip, be arranged on insulating substrate second Bridge arm conductive layer, the multiple second bridge arm power chips being arranged on the second bridge arm conductive layer, be arranged on insulating substrate One bridge arm electrode conducting layer, the first electrode conductive bar being arranged on the first bridge arm electrode conducting layer, setting are led in the second bridge arm Second electrode conductive bar in electric layer, is arranged in output electrode conductive layer the output electrode conductive layer being arranged on insulating substrate On output electrode conductive bar;Multiple first bridge arm power chips are electrically connected with the first bridge arm electrode conducting layer respectively, and described One bridge arm conductive layer is electrically connected with output electrode conductive layer, and multiple second bridge arm power chips are electric with output electrode conductive layer respectively Connection;Wherein, first electrode conductive bar is disposed adjacent with multiple first bridge arm power chips, and along multiple first bridge arm power cores The arrangement path of piece extends, and second electrode conductive bar is disposed adjacent with multiple second bridge arm power chips, and along multiple second bridges The arrangement path of arm power chip extends;The first capacitor electrode conducting layer and the setting of the second capacitance electrode conductive layer lamination, The filter capacitor is electrically connected between first capacitor electrode conducting layer and the second capacitance electrode conductive layer, the Absorption Capacitance electricity It is connected between first capacitor electrode conducting layer and the second capacitance electrode conductive layer, the first capacitor electrode conducting layer and first The electrical connection of electrodes conduct item, the second capacitance electrode conductive layer are electrically connected with second electrode conductive bar.
2. power modules according to claim 1, it is characterised in that: the multiple second bridge arm power chip and the first bridge The electrical connection of arm conductive layer, and then be able to be electrically connected with the output electrode conductive layer.
3. power modules according to claim 1, it is characterised in that: the first electrode conductive bar and second electrode are conductive Item is symmetrically arranged contour frame shape copper bar, opening the first bridge arm power chip of direction of the first electrode conductive bar, institute State opening the second bridge arm power chip of direction of second electrode conductive bar.
4. power modules according to any one of claim 1 to 3, it is characterised in that: the periphery of the insulating substrate is solid Surely it is provided with outline border, is offered on the position that the side of the outline border is located at first electrode conductive bar and second electrode conductive bar Side through-hole, the side through-hole is corresponding with the shape of first electrode conductive bar, second electrode conductive bar, the side through-hole Size be greater than the size of first and second electrodes conduct item, first and second described electrodes conduct item is respectively arranged at the side In the through-hole of side, the upper surface of the top of first and second electrodes conduct item above outline border.
5. power modules according to claim 4, it is characterised in that: the power module further includes gate pole end tab, institute It states gate pole end tab to be set between first and second bridge arm power chip and output electrode conductive layer, the output electrode is conductive Layer is in frame shape, and the gate pole end tab is located in the frame shape opening of output electrode conductive layer.
6. power modules according to claim 5, it is characterised in that: the output electrode conductive bar be frame shape, and with it is defeated The shape matching of electrode conducting layer out, leads to before offering on the position that the front end of the outline border is located at output electrode conductive bar Hole, the front through hole is corresponding with the shape of output electrode conductive bar, and the size of the front through hole is greater than output electrode conductive bar Size, the output electrode conductive bar is set in the front through hole, and its top is above the upper surface of outline border.
7. power modules according to claim 1, it is characterised in that: the first electrode conductive bar and second electrode are conductive Item is symmetrically arranged contour vertical bar shaped copper bar.
8. power modules according to claim 7, it is characterised in that: the output electrode conductive bar includes two vertical bar shapeds Conductive bar, which is respectively arranged on two arms of the frame shape of output electrode conductive layer, in the outline border Front end be located on the position of output electrode conductive bar and open up there are two front-side through-hole, the front-side through-hole is vertical bar shaped, and its Size is greater than the size of output electrode conductive bar, and the output electrode conductive bar is set in the front-side through-hole, and described defeated Upper surface of the top of electrodes conduct item above outline border out.
9. power modules according to claim 7, it is characterised in that: the output electrode conductive bar includes two Ring-cylindricals The two sides of the frame shape of output electrode conductive layer are arranged in conductive bar, two Ring-cylindrical conductive bars, in the front end of outline border position In opening up two circular through holes on the position of output electrode conductive bar, the size of the circular through hole is greater than output electrode conductive bar Size, the output electrode conductive bar is set in the circular through hole, and its top is above the upper surface of outline border.
10. power modules according to claim 1, it is characterised in that: the first electrode conductive bar, second electrode are conductive The upper end of item and output electrode conductive bar is contour.
11. power modules according to claim 1, it is characterised in that: the first bridge arm power chip, the second bridge arm function Rate chip is single tube encapsulation chip, first and second described bridge arm power chip is each formed with gate pole, source electrode and heat dissipation drain electrode.
12. power modules according to claim 1, it is characterised in that: the first electrode conductive bar and/or second electrode Conductive bar is to be extended continuously shape.
13. power modules according to claim 12, it is characterised in that: the first electrode conductive bar and/or the second electricity The centre of pole conductive bar includes at least one partition.
14. power modules according to claim 12, it is characterised in that: the centre of the output electrode conductive bar includes extremely A few partition.
15. power modules according to claim 1, it is characterised in that: further include radiator, several power modules are set It is placed on radiator.
16. power modules according to claim 11, it is characterised in that: it further include capacitor board, the first capacitor electrode Conductive layer and the second capacitance electrode conductive layer are all set on capacitor board.
17. power modules according to claim 16, it is characterised in that: further include several pressing plates, the capacitor board passes through Several pressing plates are mutually fixed with radiator.
CN201910599763.5A 2019-06-22 2019-07-04 A kind of power modules Pending CN110335864A (en)

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CN201910545535X 2019-06-22
CN201910545535 2019-06-22

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CN201910599763.5A Pending CN110335864A (en) 2019-06-22 2019-07-04 A kind of power modules

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Cited By (1)

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CN110854110A (en) * 2019-12-12 2020-02-28 深圳市奕通功率电子有限公司 Laminated power module

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN210379045U (en) * 2019-06-22 2020-04-21 深圳市奕通功率电子有限公司 Power module
CN111696976B (en) * 2020-06-22 2022-07-01 臻驱科技(上海)有限公司 Power semiconductor module substrate and electric locomotive applying same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130181228A1 (en) * 2012-01-18 2013-07-18 Mitsubishi Electric Corporation Power semiconductor module and method of manufacturing the same
CN103545305A (en) * 2013-11-01 2014-01-29 徐员娉 Power module
CN109360820A (en) * 2018-11-05 2019-02-19 深圳市慧成功率电子有限公司 The power module and power modules of multiple branches placement-and-routing
CN109560066A (en) * 2018-10-14 2019-04-02 深圳市慧成功率电子有限公司 A kind of power module with gap bridge conductive layer
CN210379045U (en) * 2019-06-22 2020-04-21 深圳市奕通功率电子有限公司 Power module

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130181228A1 (en) * 2012-01-18 2013-07-18 Mitsubishi Electric Corporation Power semiconductor module and method of manufacturing the same
CN103545305A (en) * 2013-11-01 2014-01-29 徐员娉 Power module
CN109560066A (en) * 2018-10-14 2019-04-02 深圳市慧成功率电子有限公司 A kind of power module with gap bridge conductive layer
CN109360820A (en) * 2018-11-05 2019-02-19 深圳市慧成功率电子有限公司 The power module and power modules of multiple branches placement-and-routing
CN210379045U (en) * 2019-06-22 2020-04-21 深圳市奕通功率电子有限公司 Power module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854110A (en) * 2019-12-12 2020-02-28 深圳市奕通功率电子有限公司 Laminated power module

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