CN203760452U - IGBT module suitable for electric vehicle inverter - Google Patents
IGBT module suitable for electric vehicle inverter Download PDFInfo
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- CN203760452U CN203760452U CN201320842041.6U CN201320842041U CN203760452U CN 203760452 U CN203760452 U CN 203760452U CN 201320842041 U CN201320842041 U CN 201320842041U CN 203760452 U CN203760452 U CN 203760452U
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Abstract
The utility model discloses an IGBT module suitable for an electric vehicle inverter. The collector electrode of an IGBT chip is welded with a first copper block whose thickness is larger than length of a short edge of the IGBT chip. The emitting electrode of the IGBT chip is led out through a second copper block. The control electrode is led out through a binging wire. The second copper block is connected with a third copper block through a heat-conducting conductive buffer layer whose heat conductivity is high. Through adding copper thickness on IGBT direct welding positions, large amount of heat is absorbed in a short time by high heat conductivity and high thermal capacitance of copper, transient thermal resistance is reduced, and peak current capacity is improved. In addition, through heat diffusion of the copper layer, thermal resistance is reduced through increasing heat radiating area and two-sided cooling, and two-sided cooling is realized by using a cooling plate, thereby reducing complexity of mechanical structure and reducing cost.
Description
Technical field
The utility model relates to electric automobile and drives inverter technology, especially belongs to the method for packing of a kind of IGBT module and this IGBT module.
Background technology
In traditional commercial Application, peak current ability for IGBT module does not have very high requirement, but during for automobile, in order to meet the needs that accelerate in short-term frequently, require IGBT module to there is very strong peak current ability, be generally 2s～30s, 2～3 times even higher of its rated capacity (or continuous current ability) often of current capacity now.
IGBT modular structure in traditional industry as shown in Figure 1, its production procedure is fairly simple, first igbt chip 1 is welded on to DBC (Direct bonded copper, cover copper ceramic substrate, copper layer 2+ insulating heat-conductive pad (pottery) 3+ copper layer 2) top copper layer 2 on, then by binding line by other electrode (emitters, gate pole and other non-power pin) draw, the copper layer 2 of DBC bottom carries out heat transmission by thermal grease conduction 4 ' and coldplate 5, due to the copper layer in DBC very thin (general 0.1mm～0.6mm), thermal capacitance is very little, therefore the peak current ability of this IGBT module is lower.If the IGBT module in this traditional industry is used for to automobile, must select suitable IGBT module according to required peak current ability so, because automobile-used IGBT module requires to have very high peak current ability, therefore suitable IGBT module must have larger igbt chip, and igbt chip has accounted for most costs in IGBT module, this just causes the with high costs of the expensive and inverter of automobile-used IGBT module.Meanwhile, automobile-used IGBT module is in the most of the time using, and continuous current ability is well below peak current ability, and this has just caused the significant wastage of igbt chip current capacity.And due to the life problems of binding line, this industrial IGBT module is difficult to meet automobile-used life requirements.So from automobile-used angle, wish so a kind of IGBT module, its rated current is less, but but can there is at short notice larger peak current ability.
In order to realize above-mentioned functions, each large components supplying business has taked certain measure to improve the IGBT modular structure in traditional industry, mainly contains at present comparatively typical case of two schemes.One is thick copper scheme, as shown in Figure 2, (thickness increases to about 2mm～5mm to the thickness of the top copper layer 2 that increase and igbt chip 1 weld, copper layer thickness in traditional structure is only generally hundreds of micron), all the other structures are constant, the thermal capacitance that can increase like this IGBT module reduces its thermal resistance simultaneously, makes the peak current capability improving of IGBT module.In this structure, the thermal capacitance increase of IGBT module is the characteristic of utilizing copper thermal capacitance value larger, it is mainly to utilize the ultra-high conducting of copper hot that thermal resistance reduces, after copper is passed in igbt chip 1 heating, heat will spread rapidly, thereby relatively increase the area conducting heat to coldplate 5, thereby reduced thermal resistance.In addition, power output part has been cancelled binding line, but adopts direct welding copper bus to draw, and has extended the life-span of IGBT module.Another kind is two-sided cooling scheme, as shown in Figure 3, the two sides of igbt chip 1 is all welded on DBC (copper layer 2+ insulating barrier 3+ copper layer 2), by two-sided cooling, reduce thermal resistance, thereby improve the current capacity of IGBT module, the shortcoming of this structure is that water-cooled mechanical system is comparatively complicated, increase cost, reduced reliability.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of IGBT module that is applicable to electric automobile inverter, can reduce thermal resistance, increase thermal capacitance, improve peak current ability, under identical electric current demand, can reduce the usable floor area of igbt chip, reduce the cost of IGBT module and inverter.
In order to solve the problems of the technologies described above, the IGBT module that the utility model provides is the single IGBT module that contains at least one igbt chip, the collector electrode of described igbt chip all welds with first copper billet, emitter is all drawn by second copper billet, other is controlled the utmost point and draws by binding line, the thickness of described the first copper billet exceedes the bond length of igbt chip, and described the second copper billet is connected with the 3rd copper billet.
Preferably, the thickness of described the first copper billet is 8mm～20mm, and the thickness of described the second copper billet is 2mm～5mm, and the thickness of described the 3rd copper billet is the thickness difference of the first copper billet and the second copper billet.
Wherein, described the second copper billet is connected with the 3rd copper billet by a heat-conducting buffer layer, and the emitter of igbt chip and the electrical connection of the 3rd copper billet, and described heat-conducting buffer layer adopts the flexible material of high thermal conductivity.
Or described the second copper billet is connected with the 3rd copper billet by a heat-conductivity conducting resilient coating, described heat-conductivity conducting resilient coating adopts the flexible material of high thermal conductivity and conduction.
In addition, the IGBT module that the utility model also provides another kind to be applicable to electric automobile inverter, described IGBT module is the half-bridge IGBT module that comprises half-bridge IGBT and lower half-bridge IGBT, and described upper half-bridge IGBT comprises with lower half-bridge IGBT the igbt chip that quantity is identical;
The collector electrode of all igbt chips of described upper half-bridge IGBT all welds with first copper billet, the thickness of described the first copper billet exceedes the bond length of igbt chip, the emitter of all igbt chips is all drawn by second copper billet, and other is controlled the utmost point and draws by binding line;
The collector electrode of all igbt chips of described lower half-bridge IGBT all welds with another first copper billet, the thickness of described the first copper billet exceedes the bond length of igbt chip, the emitter of all igbt chips is all drawn by another second copper billet, and other is controlled the utmost point and draws by binding line;
The emitter of upper half-bridge IGBT is connected with the collector electrode of lower half-bridge IGBT, and the emitter of lower half-bridge IGBT is connected with the 3rd copper billet.
Wherein, the second copper billet welding together with upper half-bridge IGBT emitter and the first copper billet welding together with lower half-bridge IGBT collector electrode are connected by heat-conducting buffer layer, the second copper billet welding together with lower half-bridge IGBT emitter is connected with the 3rd copper billet by heat-conducting buffer layer, and described heat-conducting buffer layer adopts the flexible material of high thermal conductivity.
Or, the second copper billet welding together with upper half-bridge IGBT emitter and the first copper billet welding together with lower half-bridge IGBT collector electrode are connected by heat-conductivity conducting resilient coating, the second copper billet welding together with lower half-bridge IGBT emitter is connected with the 3rd copper billet by heat-conductivity conducting resilient coating, and described heat-conductivity conducting resilient coating adopts the flexible material of high thermal conductivity and conduction.
Preferably, the thickness of described the first copper billet is 8mm～20mm, and the thickness of described the second copper billet is 2mm～5mm, and the thickness of described the 3rd copper billet is the thickness difference of the first copper billet and the second copper billet.
The utility model is on the basis of thick copper technology and two-sided cooling technology, further increase thermal capacitance and reduce thermal resistance, it mainly relies on the thick thermal capacitance that realizes of copper of the direct weld of increase IGBT to increase, utilize high thermal conductivity and the high heat capacity of copper to realize absorption amount of heat in the short time simultaneously, thereby reduction transient thermal resistance, increases peak current ability.In addition,, by the thermal diffusion of copper layer, increasing heat radiation area and the two-sided cooling reduction that realizes thermal resistance, and coldplate of two-sided cooling the needs of IGBT module of the present utility model, reduced the complexity of mechanical structure, reduced cost.
Brief description of the drawings
Fig. 1 is the structural representation of the IGBT module in traditional industry and uses state diagram;
Fig. 2 is a kind of structural representation of existing automobile-used IGBT module and uses state diagram;
Fig. 3 is the another kind of structural representation of existing automobile-used IGBT module and uses state diagram;
Fig. 4 is the structural representation of automobile-used IGBT module of the present utility model and uses state diagram;
Fig. 5 is the encapsulation schematic diagram of single IGBT module in the utility model;
Fig. 6 is the encapsulation schematic diagram of half-bridge IGBT module in the utility model;
Fig. 7 is the circuit theory diagrams of Fig. 6;
Fig. 8 is the thermal resistance curve comparison diagram of four kinds of IGBT modules of Fig. 1 to Fig. 4.
Wherein description of reference numerals is as follows:
1 is igbt chip; 2 is copper billet; 3 is insulating heat-conductive pad; 4 ' is thermal grease conduction; 4 is heat-conductivity conducting resilient coating; 5 is coldplate; 21 is the first copper billet; 22 is the second copper billet; 23 is the 3rd copper billet; A is the thermal resistance curve of traditional industry IGBT module; B is the thermal resistance curve of the IGBT module of thick steel structure; C is the thermal resistance curve of the IGBT module of two-sided cooling structure; D is the thermal resistance curve of the utility model half-bridge IGBT module; E is Automobile drive peak current time.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the utility model is described in further detail.
The IGBT module that the utility model provides is applicable to electric automobile and (comprises pure electric automobile, the electric automobile of mixed power electric car or other types), wherein single IGBT module contains at least one igbt chip 1, the collector electrode of described igbt chip 1 all welds with first copper billet 21, the thickness of described the first copper billet 21 exceedes minor face (shorter one side in the current collection pole-face of the igbt chip) length of igbt chip 1, the emitter of described igbt chip 1 is all drawn by second copper billet 22, described the second copper billet 22 is connected with the 3rd copper billet 23 by heat-conductivity conducting resilient coating 4, other is controlled the utmost point and draws by binding line, as shown in Figure 5.Described heat-conductivity conducting resilient coating 4 has the characteristic of high thermal conductivity, high conductivity, and has certain mechanical damping ability, as indium pad.Certainly, this heat-conductivity conducting resilient coating also can replace with the heat-conducting buffer layer (thermal grease conduction as general in routine) that does not possess conductivity, now, emitter (or second copper billet 22) and the 3rd copper billet 23 is electrically connected.
When above-mentioned single IGBT module package, first the current collection pole-face of igbt chip 1 is welded on the first copper billet 21, then the transmitting pole-face of igbt chip 1 is welded on the second copper billet 22, draw emitter by described the second copper billet 22, then by binding line by the control utmost point of igbt chip 1 (if there is other non-power pin, now also draw by the mode of binding line in the lump) draw, again the second copper billet 22 is connected with the 3rd copper billet 23 by heat-conductivity conducting resilient coating 4, finally carries out plastic packaging.
Wherein, preferably 8mm～20mm of the thickness of the first copper billet 21, the thickness of the second copper billet 22 is 2mm～5mm, the thickness of the 3rd copper billet 23 is the thickness difference of the first copper billet 21 and the second copper billet 22.
Before the collector electrode of welding igbt chip 1, need to carry out certain surface treatment to the first copper billet 21 and weld with being convenient to anticorrosion.
Above-mentioned single IGBT module in use, is pressed in it on coldplate 5 by insulating heat-conductive pad 3, and igbt chip 1 is all mutually vertical with coldplate 5.
The utility model also provides a kind of half-bridge IGBT module, and as shown in Figure 4, it comprises half-bridge IGBT and lower half-bridge IGBT, and described upper half-bridge IGBT comprises with lower half-bridge IGBT the igbt chip 1 that quantity is identical;
The collector electrode of all igbt chips 1 of described upper half-bridge IGBT all welds with first copper billet 21, the thickness of described the first copper billet 21 exceedes the bond length of igbt chip 1, the emitter of all igbt chips 1 is all drawn by second copper billet 22, and other is controlled the utmost point and draws by binding line;
The collector electrode of all igbt chips 1 of described lower half-bridge IGBT all welds with another first copper billet 21, the thickness of described the first copper billet 21 also exceedes the bond length of igbt chip 1, the emitter of all igbt chips 1 is all drawn by another second copper billet 22, and other is controlled the utmost point and draws by binding line;
The emitter of upper half-bridge IGBT is connected with the collector electrode of lower half-bridge IGBT, and the emitter of lower half-bridge IGBT and one the 3rd copper billet 23 weld.
In said structure, the second copper billet 22 welding together with upper half-bridge IGBT emitter and the first copper billet 21 welding together with lower half-bridge IGBT collector electrode are connected by heat-conductivity conducting resilient coating 4, and the second copper billet 22 welding together with lower half-bridge IGBT emitter is connected with the 3rd copper billet 23 by heat-conductivity conducting resilient coating 4.
Wherein, the thickness of described the first copper billet 21 is 8mm～20mm, and the thickness of the second copper billet 22 is 2mm～5mm, and the thickness of the 3rd copper billet 23 is the thickness difference of the first copper billet 21 and the second copper billet 22.
Above-mentioned half-bridge IGBT module is on the basis of single IGBT module, by two IGBT module series connection, circuit structure as shown in Figure 7, when encapsulation, as shown in Figure 6, two IGBT that welded are crimped on together by the heat-conductivity conducting resilient coating 4 of heat conduction and conduction, the emitter of wherein going up half-bridge IGBT is connected with the collector electrode of lower half-bridge IGBT, the emitter of lower half-bridge IGBT and the 3rd copper billet 23 weld, and finally carry out plastic packaging to give upper half-bridge IGBT and the certain pretightning force of lower half-bridge IGBT ensures thermal conductivity and the conductivity that upper and lower half-bridge is good again.
In above-mentioned encapsulation process, half-bridge IGBT and lower half-bridge IGBT the first copper billet 21 welding together by the second copper billet 22 welding together with upper half-bridge IGBT emitter with lower half-bridge IGBT collector electrode exactly of connecting is connected by the heat-conductivity conducting resilient coating 4 of heat-conductivity conducting, the second copper billet 22 welding together is connected with the 3rd copper billet 23 by the heat-conductivity conducting resilient coating 4 of heat-conductivity conducting simultaneously with lower half-bridge IGBT emitter.
In use, upper half-bridge IGBT and lower half-bridge IGBT are pressed on coldplate 5 by insulating heat-conductive pad 3 above-mentioned half-bridge IGBT module, and described upper half-bridge igbt chip is mutually vertical with coldplate with lower half-bridge igbt chip, as shown in Figure 4.And traditional industrial IGBT module and automobile-used IGBT module are in use, igbt chip and coldplate are all in level, therefore, in order to realize two-sided cooling two coldplates that just need, cause cooling system structure complexity, and cost is higher.
The utility model is on the basis of thick copper technology and two-sided cooling technology, further increase thermal capacitance and reduce thermal resistance, it mainly relies on the thick thermal capacitance that realizes of copper of the direct weld of increase IGBT to increase, utilize high thermal conductivity and the high heat capacity of copper to realize absorption amount of heat in the short time simultaneously, thereby reduction transient thermal resistance, increases peak current ability.In addition,, by the thermal diffusion of copper layer, increasing heat radiation area and the two-sided cooling reduction that realizes thermal resistance, and coldplate of two-sided cooling the needs of IGBT module of the present utility model, reduced the complexity of mechanical structure, reduced cost.
Fig. 8 is the thermal resistance curve comparison diagram of four kinds of IGBT modules of Fig. 1 to Fig. 4, wherein, do not use IGBT module (the two-sided cooling IGBT module shown in the conventional I GBT module shown in Fig. 1 and Fig. 3) thermal capacitance of thick copper very little, in Automobile drive peak current time E, it is stable that the thermal resistance curve A of the two and C reach for a long time, for Automobile drive, peak current ability is the same with continuous current ability.And only using the IGBT module (structure shown in Fig. 2) of thick copper although steady state heat resistance is larger, thermal capacitance is not very large, so the thermal resistance in Automobile drive peak current time is more smaller than stationary value, has certain peak current ability.By contrast, thermal capacitance of the present utility model further increases, and the thermal resistance in Automobile drive peak current time further reduces, and peak current ability significantly improves.
By specific embodiment, the utility model is had been described in detail above, this embodiment is only preferred embodiment of the present utility model, and it not limits the utility model.In the situation that not departing from the utility model principle; those of ordinary skill in the art under the prerequisite of not making creative work to the aspect such as thickness, structure of each copper billet by any amendment, be equal to all other embodiment that the modes such as replacement, improvement obtain, in the technology category that all should be considered as protecting at the utility model.
Claims (8)
1. one kind is applicable to the IGBT module of electric automobile inverter, it is characterized in that, described IGBT module is the single IGBT module that contains at least one igbt chip, the collector electrode of described igbt chip all welds with first copper billet, emitter is all drawn by second copper billet, other is controlled the utmost point and draws by binding line, and the thickness of described the first copper billet exceedes the bond length of igbt chip, and described the second copper billet is connected with the 3rd copper billet.
2. the IGBT module that is applicable to electric automobile inverter according to claim 1, it is characterized in that, the thickness of described the first copper billet is 8mm～20mm, and the thickness of described the second copper billet is 2mm～5mm, and the thickness of described the 3rd copper billet is the thickness difference of the first copper billet and the second copper billet.
3. the IGBT module that is applicable to electric automobile inverter according to claim 1, it is characterized in that, described the second copper billet is connected with the 3rd copper billet by a heat-conducting buffer layer, and the emitter of igbt chip and the electrical connection of the 3rd copper billet, and described heat-conducting buffer layer adopts flexible material.
4. the IGBT module that is applicable to electric automobile inverter according to claim 1, is characterized in that, described the second copper billet is connected with the 3rd copper billet by a heat-conductivity conducting resilient coating, and described heat-conductivity conducting resilient coating adopts the flexible material of conduction.
5. an IGBT module that is applicable to electric automobile inverter, is characterized in that,
Described IGBT module is the half-bridge IGBT module that comprises half-bridge IGBT and lower half-bridge IGBT, and described upper half-bridge IGBT comprises with lower half-bridge IGBT the igbt chip that quantity is identical;
The collector electrode of all igbt chips of described upper half-bridge IGBT all welds with first copper billet, the thickness of described the first copper billet exceedes the bond length of igbt chip, the emitter of all igbt chips is all drawn by second copper billet, and other is controlled the utmost point and draws by binding line;
The collector electrode of all igbt chips of described lower half-bridge IGBT all welds with another first copper billet, the thickness of described the first copper billet exceedes the bond length of igbt chip, the emitter of all igbt chips is all drawn by another second copper billet, and other is controlled the utmost point and draws by binding line;
The emitter of upper half-bridge IGBT is connected with the collector electrode of lower half-bridge IGBT, and the emitter of lower half-bridge IGBT is connected with the 3rd copper billet.
6. the IGBT module that is applicable to electric automobile inverter according to claim 5, it is characterized in that, the second copper billet welding together with upper half-bridge IGBT emitter and the first copper billet welding together with lower half-bridge IGBT collector electrode are connected by heat-conducting buffer layer, the second copper billet welding together with lower half-bridge IGBT emitter is connected with the 3rd copper billet by heat-conducting buffer layer, and described heat-conducting buffer layer adopts flexible material.
7. the IGBT module that is applicable to electric automobile inverter according to claim 5, it is characterized in that, the second copper billet welding together with upper half-bridge IGBT emitter and the first copper billet welding together with lower half-bridge IGBT collector electrode are connected by heat-conductivity conducting resilient coating, the second copper billet welding together with lower half-bridge IGBT emitter is connected with the 3rd copper billet by heat-conductivity conducting resilient coating, and described heat-conductivity conducting resilient coating adopts the flexible material of conduction.
8. according to the IGBT module that is applicable to electric automobile inverter described in any one in claim 5 to 7, it is characterized in that, the thickness of described the first copper billet is 8mm～20mm, the thickness of described the second copper billet is 2mm～5mm, and the thickness of described the 3rd copper billet is the thickness difference of the first copper billet and the second copper billet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320842041.6U CN203760452U (en) | 2013-12-19 | 2013-12-19 | IGBT module suitable for electric vehicle inverter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320842041.6U CN203760452U (en) | 2013-12-19 | 2013-12-19 | IGBT module suitable for electric vehicle inverter |
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| Publication Number | Publication Date |
|---|---|
| CN203760452U true CN203760452U (en) | 2014-08-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320842041.6U Withdrawn - After Issue CN203760452U (en) | 2013-12-19 | 2013-12-19 | IGBT module suitable for electric vehicle inverter |
Country Status (1)
| Country | Link |
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| CN (1) | CN203760452U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103745962B (en) * | 2013-12-19 | 2017-05-10 | 联合汽车电子有限公司 | IGBT module suitable for electric automobile inverter, and packaging method and application method |
| US10438932B2 (en) | 2016-08-08 | 2019-10-08 | Semiconductor Components Industries, Llc | Semiconductor device and method of integrating power module with interposer and opposing substrates |
-
2013
- 2013-12-19 CN CN201320842041.6U patent/CN203760452U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103745962B (en) * | 2013-12-19 | 2017-05-10 | 联合汽车电子有限公司 | IGBT module suitable for electric automobile inverter, and packaging method and application method |
| US10438932B2 (en) | 2016-08-08 | 2019-10-08 | Semiconductor Components Industries, Llc | Semiconductor device and method of integrating power module with interposer and opposing substrates |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140806 Effective date of abandoning: 20170510 |
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| AV01 | Patent right actively abandoned |