CN202142525U - Novel power module without base plate - Google Patents
Novel power module without base plate Download PDFInfo
- Publication number
- CN202142525U CN202142525U CN 201020589818 CN201020589818U CN202142525U CN 202142525 U CN202142525 U CN 202142525U CN 201020589818 CN201020589818 CN 201020589818 CN 201020589818 U CN201020589818 U CN 201020589818U CN 202142525 U CN202142525 U CN 202142525U
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- CN
- China
- Prior art keywords
- insulated substrate
- layer
- novel
- power module
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a novel power module without base plate. The novel power module without base plate comprises an insulated gate bipolar transistor chip, a diode chip, an insulation substrate, power terminals, power cylinders, aluminium wires and a housing. The insulated gate bipolar transistor chip and the diode chip are welded on the conductive copper layer of the insulation substrate in a reflow soldering manner. The power terminals are jointed with the power cylinders for cooperation. The power cylinders are directly welded on the insulation substrate. The insulated gate bipolar transistor chip and the diode chip are bonded via the aluminium wires for electrical connection. The insulated gate bipolar transistor chip, the diode chip and the corresponding conductive layer are also bonded via the aluminium wires for electrical connection.
Description
Technical field
The utility model belongs to the power electronics field, relates to a kind of power model, specifically a kind of power model of novel no base plate.
Background technology
Insulated gate bipolar transistor (IGBT) module is at frequency converter at present; Inverter type welder, induction heating, track traffic and wind energy; The application in fields such as solar power generation more and more widely; Increasingly high to the IGBT module reliability requirement, what require that device volume and quality do is more and more littler, and price is more and more lower.
Summary of the invention
The purpose of the utility model is to design a kind of novel no backplane power module.
What the utility model will solve is that existing IGBT module reliability is not high, and volume and quality are big, problem of ultra-high price.
The technical scheme of the utility model is:
It comprises insulated gate bipolar transistor chip, diode chip for backlight unit, insulated substrate, power terminal, power cylinder, aluminum steel and shell, and insulated gate bipolar transistor chip, diode chip for backlight unit and power cylinder are welded on the insulated substrate conductive copper layer through reflow soldering; Realize being electrically connected through the aluminum steel bonding between insulated gate bipolar transistor chip and the diode chip for backlight unit; Realize being electrically connected through the aluminum steel bonding between the corresponding conductive layer of insulated gate bipolar transistor chip and insulated substrate; Realize being electrically connected through the aluminum steel bonding between the corresponding conductive layer of diode chip for backlight unit and insulated substrate; Power terminal and power cylinder patch cooperation, and the power cylinder directly is welded on the insulated substrate.
Described insulated substrate comprises two-layer copper layer and one deck ceramic layer, two-layer copper layer sandwich one deck ceramic layer.The used material of the copper layer of insulated substrate is fine copper or copper alloy; The used material of ceramic layer is aluminium oxide AL2O3 or aluminium nitride ALN or beryllium oxide BeO, or insulation property and the good ceramic material of heat dispersion.
The power cylinder is processed with fine copper or Cu alloy material, and the top layer of power cylinder is a naked copper, perhaps a kind of in electrogilding, nickel, the tin; Power terminal is processed with fine copper or Cu alloy material, a kind of in top layer naked copper or electrogilding, nickel, the tin.Shell is a plastic casing, uses PBT, PPS, and a kind of the processing in the nylon, or similar high temperature resistant, the good plastics of insulation property are processed; Aluminum steel is processed with fine aluminium or aluminum alloy materials.
Edge grid bipolar transistor chips welding is on insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Diode chip for backlight unit is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.The power cylinder is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Thermistor is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.
Insulated substrate is the arc insulated substrate, and the flexibility of its arc-shaped bend predeformation is confirmed on request, is the arc insulated substrate of 55mm for length, and degree of crook is controlled at arc and rises out between negative 0.10mm of limit end and the 0.15mm.
The utility model has the advantages that: the utility model adopts no base plate technology, and the IGBT module of production has reduced IGBT module cost and thermal resistance; Adopt power terminal and power cylinder to patch cooperation simultaneously, reduced the stress that power cylinder welding portion receives, improve the IGBT module reliability.
Description of drawings
Fig. 1 is the structural representation of the utility model.
Fig. 2 is the structural representation of insulated substrate (DBC).
Embodiment:
Below in conjunction with accompanying drawing and embodiment the utility model is described further.
As shown in Figure 1, the utility model comprises insulated gate bipolar transistor chip 9, diode chip for backlight unit 6, insulated substrate (DBC) 1, power terminal 3, power cylinder 2, aluminum steel 8, plastic casing 4, silicon gel 5, thermistor 7, fluid sealant etc.Insulated gate bipolar transistor chip 9, diode chip for backlight unit 6 and power cylinder 2 are welded on insulated substrate (DBC) 1 conductive copper layer through reflow soldering.Cross aluminum steel 8 bondings between insulated gate bipolar transistor chip 9 and the diode chip for backlight unit 6 and realize being electrically connected, realize being electrically connected through aluminum steel 8 bondings between insulated gate bipolar transistor chip 9 and insulated substrate (DBC) the 1 corresponding conductive layer.Realize being electrically connected through aluminum steel 8 bondings between diode chip for backlight unit 6 and insulated substrate (DBC) the 1 corresponding conductive layer.Plastic casing 4 and insulated substrate (DBC) 1 is bonding through fluid sealant.Parts such as insulated gate bipolar transistor chip 9, diode chip for backlight unit 6, insulated substrate (DBC) 1, power cylinder 2, aluminum steel 8, thermistor 7 are through covering SOI gel 5, improve withstand voltage between each original paper.Power terminal and power cylinder patch cooperation, reduce the stress that power cylinder welding portion receives.The power cylinder directly is welded on the insulated substrate (DBC).
Described insulated substrate 1 comprises two-layer copper layer 100 and one deck ceramic layer 102, two-layer copper layer 100 sandwich one deck ceramic layer 102.The copper layer 100 used material of insulated substrate are fine copper or copper alloy; Ceramic layer 102 used materials are aluminium oxide AL2O3 or aluminium nitride ALN or beryllium oxide BeO, or insulation property and the good ceramic material of heat dispersion.
Edge grid bipolar transistor chip 9 is welded on the insulated substrate 1, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Diode chip for backlight unit 6 is welded on the insulated substrate 1, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Power cylinder 2 is welded on the insulated substrate 1, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Thermistor 7 is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.
Insulated substrate 1 is the arc insulated substrate, and the flexibility of its arc-shaped bend predeformation is confirmed on request, is the arc insulated substrate of 55mm for length, and degree of crook is controlled at arc and rises out between negative 0.10mm of limit end and the 0.15mm.
Claims (9)
1. novel no backplane power module; Comprise insulated gate bipolar transistor chip, diode chip for backlight unit, insulated substrate, power terminal, power cylinder, aluminum steel and shell, insulated gate bipolar transistor chip, diode chip for backlight unit and power cylinder are welded on the insulated substrate conductive copper layer through reflow soldering; Realize being electrically connected through the aluminum steel bonding between insulated gate bipolar transistor chip and the diode chip for backlight unit; Realize being electrically connected through the aluminum steel bonding between the corresponding conductive layer of insulated gate bipolar transistor chip and insulated substrate; Realize being electrically connected through the aluminum steel bonding between the corresponding conductive layer of diode chip for backlight unit and insulated substrate; It is characterized in that power terminal and power cylinder patch cooperation, the power cylinder directly is welded on the insulated substrate.
2. novel no backplane power module according to claim 1 is characterized in that described insulated substrate comprises two-layer copper layer and one deck ceramic layer, two-layer copper layer sandwich one deck ceramic layer.
3. novel no backplane power module according to claim 1 is characterized in that the used material of copper layer of insulated substrate is fine copper or copper alloy; The used material of ceramic layer is aluminium oxide AL203 or aluminium nitride ALN or beryllium oxide BeO, or insulation property and the good ceramic material of heat dispersion.
4. novel no backplane power module according to claim 1 is characterized in that the power cylinder processes with fine copper or Cu alloy material, and the top layer of power cylinder is a naked copper, perhaps a kind of in electrogilding, nickel, the tin; Power terminal is processed with fine copper or Cu alloy material, a kind of in top layer naked copper or electrogilding, nickel, the tin.
5. novel no backplane power module according to claim 1 is characterized in that shell is a plastic casing, uses PBT, PPS, and a kind of the processing in the nylon, or similar high temperature resistant, the good plastics of insulation property are processed; Aluminum steel is processed with fine aluminium or aluminum alloy materials.
6. novel no backplane power module according to claim 1 is characterized in that edge grid bipolar transistor chips welding on insulated substrate, and used welding material is Snpb, SnAg, SnAgCu, a kind of among the PbSnAg.
7. novel no backplane power module according to claim 1 is characterized in that diode chip for backlight unit is welded on the insulated substrate, and used welding material is Snpb, SnAg, SnAgCu, a kind of among the PbSnAg.
8. novel no backplane power module according to claim 1 is characterized in that the power cylinder is welded on the insulated substrate, and used welding material is Snpb, SnAg, SnAgCu, a kind of among the PbSnAg.
9. novel no backplane power module according to claim 1; It is characterized in that insulated substrate is the arc insulated substrate; The flexibility of its arc-shaped bend predeformation is confirmed on request; For length is the arc insulated substrate of 55mm, and degree of crook is controlled at arc and rises out between negative 0.10mm of limit end and the 0.15mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020589818 CN202142525U (en) | 2010-11-04 | 2010-11-04 | Novel power module without base plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201020589818 CN202142525U (en) | 2010-11-04 | 2010-11-04 | Novel power module without base plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202142525U true CN202142525U (en) | 2012-02-08 |
Family
ID=45553570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201020589818 Expired - Lifetime CN202142525U (en) | 2010-11-04 | 2010-11-04 | Novel power module without base plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202142525U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054826A (en) * | 2010-11-04 | 2011-05-11 | 嘉兴斯达微电子有限公司 | Novel baseplate-free power module |
| CN103779307A (en) * | 2014-01-25 | 2014-05-07 | 嘉兴斯达半导体股份有限公司 | Clean-free soldering power module and preparation method |
-
2010
- 2010-11-04 CN CN 201020589818 patent/CN202142525U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054826A (en) * | 2010-11-04 | 2011-05-11 | 嘉兴斯达微电子有限公司 | Novel baseplate-free power module |
| CN102054826B (en) * | 2010-11-04 | 2013-01-09 | 嘉兴斯达微电子有限公司 | Novel baseplate-free power module |
| CN103779307A (en) * | 2014-01-25 | 2014-05-07 | 嘉兴斯达半导体股份有限公司 | Clean-free soldering power module and preparation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20120208 Effective date of abandoning: 20130306 |
|
| RGAV | Abandon patent right to avoid regrant |