CN106816445A - A kind of IGBT module - Google Patents
A kind of IGBT module Download PDFInfo
- Publication number
- CN106816445A CN106816445A CN201710046848.1A CN201710046848A CN106816445A CN 106816445 A CN106816445 A CN 106816445A CN 201710046848 A CN201710046848 A CN 201710046848A CN 106816445 A CN106816445 A CN 106816445A
- Authority
- CN
- China
- Prior art keywords
- insulated substrate
- copper
- bipolar transistor
- backlight unit
- gate bipolar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
Abstract
A kind of IGBT module, including insulated gate bipolar transistor chip, diode chip for backlight unit, insulated substrate, power terminal, power cylinder, aluminum steel, plastic casing, Silica hydrogel, thermistor, described insulated gate bipolar transistor chip, diode chip for backlight unit and power cylinder are welded on insulated substrate conductive copper layer by Reflow Soldering；Electrical connection is realized between insulated gate bipolar transistor chip and diode chip for backlight unit, between insulated gate bipolar transistor chip, diode chip for backlight unit conductive layer corresponding with insulated substrate by aluminum wire bonding；Plastic casing and insulated substrate are by sealing glue sticking；Described insulated gate bipolar transistor chip, diode chip for backlight unit, insulated substrate, power cylinder, aluminum steel and thermistor are all covered with that the pressure-resistant insulating silicone gel between each original paper can be improved；It is injection molding in plastic casing for the fixed card the fixed installation of whole module on a heat sink.
Description
Technical field
The present invention relates to a kind of New insulated grid bipolar type transistor module, belong to the power model of power electronics
Encapsulation technology field.
Background technology
Current insulated gate bipolar transistor（IGBT）Module in frequency converter, inverter type welder, sensing heating, track traffic with
And wind energy, the application in the field such as solar power generation is more and more extensive, and IGBT module reliability requirement is got over
Come higher, it is desirable to which it is less and less that device volume and quality are done, and price is more and more lower.
The content of the invention
It is an object of the invention to overcome the shortcomings of that prior art is present, and a kind of simple structure is provided, easy to use, system
Make low cost, the IGBT module of high reliability.
The purpose of the present invention is completed by following technical solution, a kind of IGBT module, bag
Include insulated gate bipolar transistor chip, diode chip for backlight unit, insulated substrate, power terminal, power cylinder, aluminum steel, plastic casing,
Silica hydrogel, thermistor, described insulated gate bipolar transistor chip, diode chip for backlight unit and power cylinder are welded by Reflow Soldering
It is connected on insulated substrate conductive copper layer；Between insulated gate bipolar transistor chip and diode chip for backlight unit, insulated gate bipolar it is brilliant
Electrical connection is realized between body die, diode chip for backlight unit conductive layer corresponding with insulated substrate by aluminum wire bonding；Modeling
Material shell and insulated substrate are by sealing glue sticking；Described insulated gate bipolar transistor chip, diode chip for backlight unit, insulation base
Plate, power cylinder, aluminum steel and thermistor are all covered with that the pressure-resistant insulating silicone gel between each original paper can be improved；For whole
Individual module fixed installation fixed card on a heat sink is injection molding in plastic casing.
As preferred：One layer ceramics of the described insulated substrate by upper layers of copper and lower layers of copper and in sandwich it is sintered and
Into upper layers of copper and lower layers of copper use fine copper or Cu alloy material, and middle ceramics are exhausted using aluminum oxide, aluminium nitride or beryllium oxide
Edge performance and the good ceramic material of heat dispersion are made；
Described power cylinder uses fine copper or Cu alloy material, top layer naked copper or plating gold, nickel or tin solderable metal
Material layer.
It is solderable that described power terminal is also adopted by fine copper or Cu alloy material, top layer naked copper or plating gold, nickel, tin etc.
Connect metal material layer.
As preferred：The inside hole shape of the power cylinder is square, circular or rhombus；The power cylinder it is interior
Portion hole is through hole or blind hole；Described power terminal outer shape is square, circular or rhombus；Described power terminal and
Power cylinder passes through to patch mating connection, or is connected by welding, or is connected by riveting compression fit, or is led by viscous
Electric glue gemel connection.
As preferred：Described plastic casing uses high temperature resistant and insulating properties good PBT, PPS, nylon material system
Into；Described Silica hydrogel is insulating coating, and is covered in insulated gate bipolar transistor chip, diode chip for backlight unit, insulation base
Above plate, thermistor, power cylinder, aluminum steel；
Described aluminum steel uses fine aluminium or aluminum alloy materials, is bonded by ultrasonic wave mode and is connected to insulated gate bipolar crystal
Die, insulated substrate and diode chip for backlight unit.
As preferred：Between described edge grid bipolar transistor die and insulated substrate, insulated substrate and diode core
Connected by welding manner between piece, between insulated substrate and power cylinder, between insulated substrate and thermistor, it is described
Welding using containing Sn Snpb, SnAg, SnAgCu or PbSnAg welding material, welding maximum temperature control 100-400 DEG C it
Between；
As preferred：The insulated substrate is arc-shaped bend predeformation substrate, and flexibility therein determines on request, and for length
The arc insulated substrate for 55mm is spent, the control of its degree of crook is risen out side end and born between 0.10mm and 0.15mm in arc.
As preferred：The upper copper layer thickness A of the insulated substrate is from 0.1 millimeter to 3 millimeters；Lower copper layer thickness C from
Between 0.1 millimeter to 3 millimeters；Intermediate layer thickness B is from 0.1 millimeter to 1 millimeter；Wherein go up copper layer thickness A and lower layers of copper is thick
Degree must be different, and thickness difference is between -3 to 3 millimeters of ﹢.
The present invention patches cooperation and insulated substrate by power terminal and power cylinder（DBC）Directly crimp the side of radiator
Method, manufacture low cost, highly reliable is new without base plate IGBT module；The present invention is adopted by injection casing
Designed with special construction, improve casing insulation pressure-resistant；Described insulated substrate（DBC）, power cylinder, aluminum steel, thermistor etc.
Part, it is pressure-resistant between each original paper of raising by covering insulating silicone gel；Fixed card is injection molding in plastic casing, can be with
Highly reliably it is arranged on the whole module of key screw and is fixed on a heat sink.
It is an advantage of the invention that：Using without base plate technique, IGBT module is produced, reduce insulated gate double
Bipolar transistor module cost and thermal resistance；Cooperation is patched using power terminal and power cylinder simultaneously, the welding of power cylinder is reduced
The stress that part is subject to, improves IGBT module reliability.
Brief description of the drawings
Fig. 1 is IGBT module schematic diagram of the present invention.
Fig. 2 is the A-A sectional views in Fig. 1.
Fig. 3 is IGBT module cutting plane schematic diagram of the present invention.
Fig. 4 is a kind of IGBT module chip layout schematic diagram of the present invention.
Fig. 5 is another IGBT module chip layout schematic diagram of the present invention.
Fig. 6 is New insulated grid bipolar type transistor module electrical block diagram.
Fig. 7 is the shell schematic diagram of New insulated grid bipolar type transistor module.
Fig. 8 is the insulated substrate structural representation of IGBT module of the present invention.
Fig. 9 is partial enlarged drawing at B in Fig. 8.
Specific embodiment：
Below in conjunction with the accompanying drawings and embodiment the invention will be further described.Shown in Fig. 1-9, a kind of insulated gate of the present invention
Bipolar type transistor module, including insulated gate bipolar transistor chip 9, diode chip for backlight unit 6, insulated substrate 1, power terminal 3,
Power cylinder 2, aluminum steel 8, plastic casing 4, Silica hydrogel 5, thermistor 7, described insulated gate bipolar transistor chip 9, two
Pole pipe chip 6 and power cylinder 2 are welded on the conductive copper layer of insulated substrate 1 by Reflow Soldering；Insulated gate bipolar transistor core
Between piece 9 and diode chip for backlight unit 6, insulated gate bipolar transistor chip 9, diode chip for backlight unit 6 it is corresponding with insulated substrate 1 conductive
It is bonded to realize electrical connection by aluminum steel 8 between layer；Plastic casing 4 and insulated substrate 1 are by sealing glue sticking；Described
Insulated gate bipolar transistor chip 9, diode chip for backlight unit 6, insulated substrate 1, power cylinder 2, aluminum steel 8 and thermistor 7 are equal
It is coated with the pressure-resistant insulating silicone gel 5 that can be improved between each original paper；For whole module fixed installation consolidating on a heat sink
Determine card 10 to be injection molding in plastic casing 4.
Insulated substrate of the present invention 1 is by upper layers of copper 120 and lower layers of copper 130 and in one layer of ceramics 110 of sandwich
Sintered to form, upper layers of copper 120 and lower layers of copper 130 use fine copper or Cu alloy material, middle ceramics 110 to use aluminum oxide
（AL2O3）, aluminium nitride（ALN）Or beryllium oxide（BeO）Insulating properties and the good ceramic material of heat dispersion are made；
Described power cylinder 2 uses fine copper or Cu alloy material, top layer naked copper or plating gold, nickel or tin solderable metal
Material layer.
Described power terminal 3 is also adopted by fine copper or Cu alloy material, top layer naked copper or plating gold, nickel, tin etc. can
Welding metal material layer.
The inside hole shape of power cylinder 2 of the present invention is square, circular or rhombus；The power cylinder 2 it is interior
Portion hole is through hole or blind hole；The described outer shape of power terminal 3 is square, circular or rhombus；Described power terminal 3
Pass through to patch mating connection with power cylinder 2, or be connected by welding, or connected by riveting compression fit, or pass through
Viscous conducting resinl gemel connection.
Plastic casing of the present invention 4 uses high temperature resistant and the good PBT of insulating properties, PPS, nylon material to be made；
Described Silica hydrogel 5 is insulating coating, and is covered in insulated gate bipolar transistor chip 9, diode chip for backlight unit 6, insulation base
Plate（DBC）1st, above thermistor 7, power cylinder 2, aluminum steel 8；
Described aluminum steel 8 uses fine aluminium or aluminum alloy materials, is bonded by ultrasonic wave mode and is connected to insulated gate bipolar crystalline substance
Body die 9, insulated substrate 1 and diode chip for backlight unit 6.
Between edge grid bipolar transistor die 9 of the present invention and insulated substrate 1, insulated substrate 1 and diode core
Connected by welding manner between piece 6, between insulated substrate 1 and power cylinder 2, between insulated substrate 1 and thermistor 7,
Described welding using Snpb, SnAg, SnAgCu or PbSnAg welding material containing Sn, the control of welding maximum temperature 100-
Between 400 DEG C；
The insulated substrate 1 is arc-shaped bend predeformation substrate, and flexibility therein determines on request, and is 55mm for length
Arc insulated substrate 1, it is negative between 0.10mm and 0.15mm that the control of its degree of crook rises out side end in arc.
The thickness A of upper layers of copper 120 of the insulated substrate 1 is from 0.1 millimeter to 3 millimeters；The thickness C of lower layers of copper 130 is from 0.1
Millimeter is between 3 millimeters；The thickness B of intermediate layer 110 is from 0.1 millimeter to 1 millimeter；Wherein go up the thickness A of layers of copper 120 and lower layers of copper
130 thickness C must be different, and thickness difference A-C is between -3 to 3 millimeters of ﹢.The present invention is to solve realizing without base plate insulated gate
Bipolar type transistor module is manufactured, and reduces IGBT module module cost and thermal resistance；Use power end simultaneously
Son and power cylinder patch cooperation, reduce the stress that power cylinder welding portion is subject to, and improve insulated gate bipolar transistor mould
Block reliability.
Claims (7)
1. a kind of IGBT module, including insulated gate bipolar transistor chip（9）, diode chip for backlight unit（6）、
Insulated substrate（1）, power terminal（3）, power cylinder（2）, aluminum steel（8）, plastic casing（4）, Silica hydrogel（5）, thermistor
（7）, it is characterised in that described insulated gate bipolar transistor chip（9）, diode chip for backlight unit（6）With power cylinder（2）Pass through
Reflow Soldering is welded on insulated substrate（1）On conductive copper layer；Insulated gate bipolar transistor chip（9）And diode chip for backlight unit（6）It
Between, insulated gate bipolar transistor chip（9）, diode chip for backlight unit（6）With insulated substrate（1）Pass through between corresponding conductive layer
Aluminum steel（8）It is bonded to realize electrical connection；Plastic casing（4）And insulated substrate（1）By sealing glue sticking；Described insulated gate
Bipolar transistor die（9）, diode chip for backlight unit（6）, insulated substrate（1）, power cylinder（2）, aluminum steel（8）And thermistor
（7）It is all covered with that the pressure-resistant insulating silicone gel between each original paper can be improved（5）；For whole module to be fixedly mounted on radiator
On fixed card（10）It is injection molding in plastic casing（4）It is interior.
2. IGBT module according to claim 1, it is characterised in that described insulated substrate（1）By
Upper layers of copper（120）, lower layers of copper（130）And one layer of ceramics of sandwich（110）It is sintered to form, upper layers of copper（120）With under
Layers of copper（130）Using fine copper or Cu alloy material, middle ceramics（110）Using aluminum oxide（AL2O3）, aluminium nitride（ALN）
Or beryllium oxide（BeO）Insulating properties and the good ceramic material of heat dispersion are made；
Described power cylinder（2）Using fine copper or Cu alloy material, top layer naked copper or plating gold, nickel or the solderable gold of tin
Category material layer；
Described power terminal（3）It is also adopted by fine copper or Cu alloy material, top layer naked copper or plating gold, nickel, tin etc. solderable
Connect metal material layer.
3. IGBT module according to claim 1 and 2, it is characterised in that the power cylinder（2）
Inside hole shape be square, circular or rhombus；The power cylinder（2）Internal holes be through hole or blind hole；Described
Power terminal（3）Outer shape is square, circular or rhombus；Described power terminal（3）With power cylinder（2）By patching
It is connected, or is connected by welding, or is connected by riveting compression fit, or by viscous conducting resinl gemel connection.
4. IGBT module according to claim 1, it is characterised in that described plastic casing（4）Adopt
With high temperature resistant and the good PBT of insulating properties, PPS, nylon material is made；Described Silica hydrogel（5）It is insulating coating, and covers
Cover in insulated gate bipolar transistor chip（9）, diode chip for backlight unit（6）, insulated substrate（1）, thermistor（7）, power cylinder
（2）, aluminum steel（8）Above；
Described aluminum steel（8）Using fine aluminium or aluminum alloy materials, it is bonded by ultrasonic wave mode and is connected to insulated gate bipolar
Transistor chip（9）, insulated substrate（1）And diode chip for backlight unit（6）.
5. the IGBT module according to claim 1 or 2 or 4, it is characterised in that described edge grid are double
Bipolar transistor chip（9）With insulated substrate（1）Between, insulated substrate（1）With diode chip for backlight unit（6）Between, insulated substrate（1）
With power cylinder（2）Between, insulated substrate（1）With thermistor（7）Between connected by welding manner, described welding adopts
With Snpb, SnAg, SnAgCu or PbSnAg welding material containing Sn, welding maximum temperature control is between 100-400 DEG C.
6. IGBT module according to claim 5, it is characterised in that the insulated substrate（1）It is arc
Shape bends predeformation substrate, and flexibility therein determines on request, and is the arc insulated substrate of 55mm for length（1）, its
Degree of crook control is risen out side end and is born between 0.10mm and 0.15mm in arc.
7. IGBT module according to claim 1, it is characterised in that the insulated substrate（1）It is upper
Layers of copper（120）Thickness A is from 0.1 millimeter to 3 millimeters；Lower layers of copper（130）Thickness C is from 0.1 millimeter to 3 millimeters；It is middle
Layer（110）Thickness B is from 0.1 millimeter to 1 millimeter；Wherein go up layers of copper（120）Thickness（A）With lower layers of copper（130）Thickness（C）Must
Must be different, and thickness difference（A-C）Between -3 to 3 millimeters of ﹢.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710046848.1A CN106816445A (en) | 2017-01-22 | 2017-01-22 | A kind of IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710046848.1A CN106816445A (en) | 2017-01-22 | 2017-01-22 | A kind of IGBT module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106816445A true CN106816445A (en) | 2017-06-09 |
Family
ID=59112015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710046848.1A Pending CN106816445A (en) | 2017-01-22 | 2017-01-22 | A kind of IGBT module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106816445A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128898A (en) * | 2019-12-13 | 2020-05-08 | 深圳基本半导体有限公司 | Crimping type SiC power module packaging structure |
| CN116435264A (en) * | 2023-06-12 | 2023-07-14 | 江苏宏微科技股份有限公司 | Power semiconductor module |
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| CN102054826A (en) * | 2010-11-04 | 2011-05-11 | 嘉兴斯达微电子有限公司 | Novel baseplate-free power module |
| CN102738139A (en) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | Novel packaged power module |
| CN202633270U (en) * | 2012-06-05 | 2012-12-26 | 嘉兴斯达微电子有限公司 | Novel high-reliability power module |
| CN103779315A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Package structure of radiating integrated power module |
| CN105655306A (en) * | 2016-03-10 | 2016-06-08 | 嘉兴斯达半导体股份有限公司 | Double-side welding and single-side heat radiation power module integrated on heat radiation substrate |
-
2017
- 2017-01-22 CN CN201710046848.1A patent/CN106816445A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102054826A (en) * | 2010-11-04 | 2011-05-11 | 嘉兴斯达微电子有限公司 | Novel baseplate-free power module |
| CN102738139A (en) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | Novel packaged power module |
| CN202633270U (en) * | 2012-06-05 | 2012-12-26 | 嘉兴斯达微电子有限公司 | Novel high-reliability power module |
| CN103779315A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Package structure of radiating integrated power module |
| CN105655306A (en) * | 2016-03-10 | 2016-06-08 | 嘉兴斯达半导体股份有限公司 | Double-side welding and single-side heat radiation power module integrated on heat radiation substrate |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111128898A (en) * | 2019-12-13 | 2020-05-08 | 深圳基本半导体有限公司 | Crimping type SiC power module packaging structure |
| CN111128898B (en) * | 2019-12-13 | 2021-07-30 | 深圳基本半导体有限公司 | Crimping type SiC power module packaging structure |
| CN116435264A (en) * | 2023-06-12 | 2023-07-14 | 江苏宏微科技股份有限公司 | Power semiconductor module |
| CN116435264B (en) * | 2023-06-12 | 2023-10-27 | 江苏宏微科技股份有限公司 | Power semiconductor module |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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Application publication date: 20170609 |