CN107359143A - A kind of IGBT module - Google Patents
A kind of IGBT module Download PDFInfo
- Publication number
- CN107359143A CN107359143A CN201710581086.5A CN201710581086A CN107359143A CN 107359143 A CN107359143 A CN 107359143A CN 201710581086 A CN201710581086 A CN 201710581086A CN 107359143 A CN107359143 A CN 107359143A
- Authority
- CN
- China
- Prior art keywords
- diode
- bipolar transistor
- insulated
- power terminal
- insulated substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 39
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010949 copper Substances 0.000 claims abstract description 15
- 229920003023 plastic Polymers 0.000 claims abstract description 13
- 239000004033 plastic Substances 0.000 claims abstract description 13
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 8
- 239000010959 steel Substances 0.000 claims abstract description 8
- 239000000017 hydrogel Substances 0.000 claims abstract description 4
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 4
- 238000005476 soldering Methods 0.000 claims abstract description 3
- 238000003466 welding Methods 0.000 claims description 15
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000011135 tin Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910007637 SnAg Inorganic materials 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 239000000499 gel Substances 0.000 claims description 3
- 238000001746 injection moulding Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 abstract description 3
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 101000709025 Homo sapiens Rho-related BTB domain-containing protein 2 Proteins 0.000 description 7
- 102100032658 Rho-related BTB domain-containing protein 2 Human genes 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
-
- H01L29/7393—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
A kind of IGBT module, including the chip part of insulated gate bipolar transistor and diode, insulated substrate DBC, power terminal, signal terminal, plastic casing, Silica hydrogel, heat-radiating substrate；Described insulated substrate DBC and power terminal is welded by aluminum steel or copper wire bonding；Electrical connection is realized by aluminum steel or copper wire bonding between insulated gate bipolar transistor and the chip part of diode, between the conductive layer corresponding with insulated substrate DBC of the chip part of insulated gate bipolar transistor and diode；The chip of insulated gate bipolar transistor is with diode chip for backlight unit reflow soldering on insulated substrate DBC conductive copper layers；It has it is rational in infrastructure, it is easy to use, reliable, resistance thermal stress, outside installation gravitation and the integral firmness of power terminal and signal terminal can be improved, the features such as improving power terminal, signal terminal and insulated substrate DBC connection reliability.
Description
Technical field
The invention belongs to power electronics field, is related to the design, encapsulation and application of power model, specifically a kind of
New highly reliable IGBT module and automobile-used IGBT module.
Background technology
At present, insulated gate bipolar transistor IGBT module frequency converter, inverter type welder, sensing heating, track traffic with
And the application in the field such as wind energy and solar power generation is more and more extensive, particularly power model, this structure to IGBT module and
The reliability requirement of circuit is higher.
The content of the invention
It is an object of the invention to overcome the shortcomings of the prior art, there is provided and it is a kind of rational in infrastructure, it is easy to use, can
Lean on, resistance thermal stress, outside installation gravitation and the integral firmness of power terminal and signal terminal can be improved, improve power end
IGBT module and the automobile-used IGBT module of son, signal terminal and insulated substrate DBC connection reliability.
The purpose of the present invention is completed by following technical solution, a kind of IGBT module, bag
Include the chip part of insulated gate bipolar transistor and diode, insulated substrate DBC, power terminal, signal terminal, outside plastics
Shell, Silica hydrogel, heat-radiating substrate；Described insulated substrate DBC and power terminal is welded by aluminum steel or copper wire bonding；Insulated gate
Between bipolar transistor and the chip part of diode, the chip part of insulated gate bipolar transistor and diode with
Electrical connection is realized by aluminum steel or copper wire bonding between the corresponding conductive layers of insulated substrate DBC；Insulated gate bipolar
The chip of transistor is with diode chip for backlight unit reflow soldering on insulated substrate DBC conductive copper layers.
As preferred：Described signal terminal uses fine copper or Cu alloy material, and is electroplate with gold, nickel or tin outside
In one of solderable metal material；
Described power terminal uses fine copper or Cu alloy material, top layer naked copper or plating gold, the solderable gold of nickel or tin
Belong to one of material；
Described insulated gate bipolar transistor and the chip part of diode and insulated substrate DBC are connected by welding manner
Connect, this welding uses one of welding material containing Sn in Snpb, SnAg, SnAgCu, PbSnAg, and welding maximum temperature control exists
Between 100-400 DEG C.
As preferred：Described power terminal and signal terminal pass through aluminum wire bonding or copper cash key with insulated substrate DBC
Conjunction mode connects；Power terminal and signal terminal are locally injection molding shell injection parcel；
Described insulated gate bipolar transistor and the chip part of diode, insulated substrate DBC, power terminal, signal end
It is sub to be all covered with improving pressure-resistant insulating silicone gel between each original paper above.
As preferred：Described plastic casing is using the good plastics of PBT, PPS or PPA high temperature resistant, insulating properties；It is described
Plastic casing and heat-radiating substrate by sealing glue sticking, while coordinate screw connection；
Described heat-radiating substrate carries the radiating pin or fin for air-cooled either water cooling.
It is a kind of that automobile-used IGBT module, described automobile-used module are adopted made of IGBT module as described above
With P N poles in the same side of module, UVW poles are in the opposite side of module；Between block length is from 10 to 200 millimeter；Module is wide
Between degree is from 10 to 150 millimeter；Between module height is from 12 to 50 millimeter.
It is an advantage of the invention that：Using injection casing, locally power terminal and signal terminal are wrapped up in injection, improve power end
Son and signal terminal resist thermal stress and outside installation gravitation, improve power terminal and signal terminal integral firmness.Pass through work(
Rate terminal and signal terminal and the method for insulated substrate DBC Direct Bondings welding, eliminate the fatigue of traditional handicraft terminal welding
Defect, the reliability that power terminal and signal terminal connect with insulated substrate DBC is improved, manufactures highly reliable insulated gate bipolar
Transistor modular.
Brief description of the drawings
Fig. 1 is IGBT module schematic diagram of the present invention.
Fig. 2 is IGBT module electrical block diagram of the present invention.
Fig. 3 is IGBT module close-up schematic view of the present invention.
Fig. 4 is IGBT module heat-radiating substrate schematic diagram of the present invention.
Fig. 5 is IGBT module front device distribution schematic diagram of the present invention.
Fig. 6 is IGBT module size of the present invention and distribution of electrodes schematic diagram.
Embodiment：
Below in conjunction with the accompanying drawings and embodiment the invention will be further described.Shown in Fig. 1-6, a kind of insulated gate of the present invention
Bipolar type transistor module, including the chip part 3 of insulated gate bipolar transistor and diode, insulated substrate DBC2, work(
The parts such as rate terminal 5, signal terminal 7, plastic casing 8, Silica hydrogel 4, heat-radiating substrate 1（As shown in Fig. 1,3）；Described insulation base
Plate DBC2 and power terminal 5 are welded by aluminum steel or copper wire bonding；The chip of insulated gate bipolar transistor and diode
Between part 3, the chip part 3 of insulated gate bipolar transistor and diode conductive layer corresponding with insulated substrate DBC2 it
Between by aluminum steel or copper wire bonding come realize electrical connection；The chip of insulated gate bipolar transistor returns with diode chip for backlight unit
Fluid welding is connected on insulated substrate DBC2 conductive copper layers；Described power model forms circuit structure as shown in Figure 2.
Signal terminal 7 of the present invention uses fine copper or Cu alloy material, and is electroplate with outside in gold, nickel or tin
One of solderable metal material；
Described power terminal 5 uses fine copper or Cu alloy material, top layer naked copper or plating gold, nickel or tin it is solderable
One of metal material；
Described insulated gate bipolar transistor and the chip part 3 of diode and insulated substrate DBC2 are connected by welding manner
Connect, this welding uses one of welding material containing Sn in Snpb, SnAg, SnAgCu, PbSnAg, and welding maximum temperature control exists
Between 100-400 DEG C.
Described power terminal 5 shown in figure and signal terminal 7 and insulated substrate DBC2 pass through aluminum wire bonding or copper cash
Bonding pattern connects；Power terminal 5 and the local shell 8 that is injection molding of signal terminal 7 are molded parcel.
Described plastic casing 8 is using the good plastics of PBT, PPS or PPA high temperature resistant, insulating properties；Outside described plastics
Shell 8 and heat-radiating substrate 1 coordinate screw connection by sealing glue sticking；
Described insulated gate bipolar transistor and the chip part 3 of diode, insulated substrate DBC2, power terminal 5, signal
Terminal 7 is all covered with improving pressure-resistant insulating silicone gel 4 between each original paper above；
Described heat-radiating substrate carries the radiating pin or fin for air-cooled either water cooling.
It is a kind of that automobile-used IGBT module, described automobile-used module are adopted made of IGBT module as described above
With P N poles in the same side of module, UVW poles are in the opposite side of module；Between block length is from 10 to 200 millimeter；Module is wide
Between degree is from 10 to 150 millimeter；Between module height is from 12 to 50 millimeter.
Claims (5)
1. a kind of IGBT module, including the chip part of insulated gate bipolar transistor and diode
（3）, insulated substrate DBC（2）, power terminal（5）, signal terminal（7）, plastic casing（8）, Silica hydrogel（4）, heat-radiating substrate（1）；
It is characterized in that described insulated substrate DBC（2）And power terminal（5）Welded by aluminum steel or copper wire bonding；Insulated gate is double
The chip part of bipolar transistor and diode（3）Between, the chip part of insulated gate bipolar transistor and diode
（3）With insulated substrate DBC（2）Electrical connection is realized by aluminum steel or copper wire bonding between corresponding conductive layer；Insulation
The chip of grid bipolar transistor is with diode chip for backlight unit reflow soldering on insulated substrate DBC conductive copper layers.
2. IGBT module according to claim 1, it is characterised in that described signal terminal（7）Adopt
With fine copper or Cu alloy material, and one of solderable metal material being electroplate with outside in gold, nickel or tin；
Described power terminal（5）Using fine copper or Cu alloy material, top layer naked copper or plating gold, nickel or tin it is solderable
Connect one of metal material；
Described insulated gate bipolar transistor and the chip part of diode（3）With insulated substrate DBC（2）By welding side
Formula connects, and this welding uses one of welding material containing Sn in Snpb, SnAg, SnAgCu, PbSnAg, and welding maximum temperature control exists
Between 100-400 DEG C.
3. IGBT module according to claim 1 or 2, it is characterised in that described power terminal
（5）And signal terminal（7）With insulated substrate DBC（2）Connected by aluminum wire bonding or copper wire bonding mode；Power terminal（5）
And signal terminal（7）Part is injection molding shell（8）Injection parcel；Described heat-radiating substrate, which carries, is used for air-cooled or water cooling dissipate
Hot pin or fin.
4. IGBT module according to claim 3, it is characterised in that described plastic casing（8）Adopt
With the good plastics of PBT, PPS or PPA high temperature resistant, insulating properties；Described plastic casing（8）And heat-radiating substrate（1）By close
Sealing is bonded, while coordinates screw connection；
Described insulated gate bipolar transistor and the chip part of diode（3）, insulated substrate DBC（2）, power terminal
（5）, signal terminal（7）It is all covered with improving pressure-resistant insulating silicone gel between each original paper above（4）.
5. a kind of automobile-used IGBT module made of IGBT module as claimed in claim 1 or 2 or 3 or 4, its
Be characterised by described automobile-used module using P N poles in the same side of module, UVW poles are in the opposite side of module；Block length
Between from 10 to 200 millimeter；Between module width is from 10 to 150 millimeter；Between module height is from 12 to 50 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710581086.5A CN107359143A (en) | 2017-07-17 | 2017-07-17 | A kind of IGBT module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710581086.5A CN107359143A (en) | 2017-07-17 | 2017-07-17 | A kind of IGBT module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107359143A true CN107359143A (en) | 2017-11-17 |
Family
ID=60293219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710581086.5A Pending CN107359143A (en) | 2017-07-17 | 2017-07-17 | A kind of IGBT module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107359143A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336044A (en) * | 2018-01-25 | 2018-07-27 | 周元忠 | A kind of bipolar integrated circuit chip based on channel medium isolation |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201466026U (en) * | 2009-04-02 | 2010-05-12 | 嘉兴斯达微电子有限公司 | Power module with direct bonding power terminal |
| CN103779315A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Package structure of radiating integrated power module |
| CN104145333A (en) * | 2012-04-16 | 2014-11-12 | 富士电机株式会社 | Semiconductor device and cooler for semiconductor device |
| US20150008574A1 (en) * | 2012-09-19 | 2015-01-08 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN207165546U (en) * | 2017-07-17 | 2018-03-30 | 上海道之科技有限公司 | IGBT module |
-
2017
- 2017-07-17 CN CN201710581086.5A patent/CN107359143A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201466026U (en) * | 2009-04-02 | 2010-05-12 | 嘉兴斯达微电子有限公司 | Power module with direct bonding power terminal |
| CN104145333A (en) * | 2012-04-16 | 2014-11-12 | 富士电机株式会社 | Semiconductor device and cooler for semiconductor device |
| US20150008574A1 (en) * | 2012-09-19 | 2015-01-08 | Fuji Electric Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| CN103779315A (en) * | 2014-01-24 | 2014-05-07 | 嘉兴斯达微电子有限公司 | Package structure of radiating integrated power module |
| CN207165546U (en) * | 2017-07-17 | 2018-03-30 | 上海道之科技有限公司 | IGBT module |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108336044A (en) * | 2018-01-25 | 2018-07-27 | 周元忠 | A kind of bipolar integrated circuit chip based on channel medium isolation |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171117 |