CN215008188U - Vehicle-mounted high-power integrated packaging module - Google Patents
Vehicle-mounted high-power integrated packaging module Download PDFInfo
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- CN215008188U CN215008188U CN202120331587.XU CN202120331587U CN215008188U CN 215008188 U CN215008188 U CN 215008188U CN 202120331587 U CN202120331587 U CN 202120331587U CN 215008188 U CN215008188 U CN 215008188U
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Abstract
The utility model discloses a vehicle-mounted high-power integrated packaging module, including power module body and the plastic casing that is used for encapsulating the power module body, the power module body mainly includes chip part, insulating substrate, power terminal, signal terminal, thermistor and heat dissipation base plate, through sealed glue bonding while cooperating the screw and carrying out fixed connection between insulating substrate and the plastic casing, the heat dissipation base plate sets up in bottom one side of insulating substrate in order to improve the heat dissipation performance of power module body; the chip part comprises an insulated gate bipolar transistor and a diode chip, the signal terminal, the insulated gate bipolar transistor and the diode chip are all welded on a conductive copper layer of the insulating substrate through tin soldering, and the power terminal is welded on the conductive copper layer of the insulating substrate through ultrasonic welding; the chip parts and the conducting layers of the corresponding insulating substrates are electrically connected through aluminum wire bonding.
Description
Technical Field
The utility model relates to an electron device technical field, concretely relates to automobile-used high power integrated encapsulation module.
Background
A power module is a power driver that combines power electronics and integrated circuit technology. The intelligent power module gains a bigger and bigger market due to the advantages of high integration level, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is a common power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances. With the continuous development of the new energy automobile industry, the expected maturity of a power chip is increased, and at present, an Insulated Gate Bipolar Transistor (IGBT) module is more and more widely applied to the fields of frequency converters, inverter welding machines, induction heating, rail transit, wind energy, solar power generation, new energy automobiles and the like, and particularly, the power module has higher requirements on the structure, the circuit reliability and the integration level of the power module.
Disclosure of Invention
The to-be-solved technical problem of the utility model lies in that, to the above-mentioned defect of prior art, an automobile-used high-power integrated package module that can effectively improve structure and circuit reliability and integrated level is provided.
The utility model aims at providing a vehicle-mounted high-power integrated packaging module, which comprises a power module body and a plastic shell used for packaging the power module body, wherein the power module body mainly comprises a chip part, an insulating substrate, a power terminal, a signal terminal, a thermistor and a heat dissipation substrate, the insulating substrate is bonded with the plastic shell through sealant, and is fixedly connected with the plastic shell through a screw, and the heat dissipation substrate is arranged on one side of the bottom of the insulating substrate so as to improve the heat dissipation performance of the power module body; the chip part comprises an insulated gate bipolar transistor and a diode chip, the signal terminal, the insulated gate bipolar transistor and the diode chip are all welded on a conductive copper layer of the insulating substrate through tin soldering, and the power terminal is welded on the conductive copper layer of the insulating substrate through ultrasonic welding; the chip part and the conducting layer of the corresponding insulating substrate are electrically connected through aluminum wire bonding, and insulating silica gel for improving the pressure resistance of all elements is filled between the power module body and the plastic shell.
Furthermore, the power terminals are distributed on two sides of the length direction of the insulating substrate, and the signal terminals are arranged in an upper area of the insulating substrate perpendicular to the insulating substrate; the chip part, the insulating substrate, the thermistor, the power terminal, the ultrasonic bonding area, the signal terminal base welding area and the aluminum wire are all covered with silica gel which is formed by insulating paint and used for improving the insulation and pressure resistance of all devices.
Furthermore, the power terminal and the signal terminal are both made of pure copper or copper alloy materials, and the surface layer is made of bare copper or one of gold, nickel and tin-plated weldable metal materials; the plastic shell is made of high-temperature-resistant plastic with good insulating property; the power terminal is wrapped by the injection molding shell in an injection molding mode through an injection molding insert process; the aluminum wire is made of pure aluminum or aluminum alloy materials and is bonded and connected to the chip part and the insulating substrate in an ultrasonic mode.
Further, the chip part and the insulating substrate are connected by welding through one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the power terminal and the insulating substrate are connected through ultrasonic welding or welding by one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the signal terminal and the insulating substrate and the thermistor and the insulating substrate are connected through one of Sn-containing welding materials of SnPb, SnAg, SnAgCu and PbSnAg in a welding mode, and the welding temperature is 150-350 degrees.
The utility model has the advantages of: the utility model discloses a local parcel power terminal of moulding plastics of shell of moulding plastics improves power terminal resistance thermal stress and externally mounted gravitation, improves the whole fastness of power terminal. The power terminal, the signal terminal and the insulating substrate (DBC) are directly ultrasonically welded, so that the fatigue defect of the welding of the terminal in the traditional process is eliminated, the reliability of the connection of the power terminal, the signal terminal and the insulating substrate (DBC) is improved, and the high-reliability insulated gate bipolar transistor module is manufactured. Meanwhile, the signal terminal is directly welded on the conducting layer corresponding to the insulated substrate (DBC), so that the size of the module is further reduced on the premise of ensuring the current level, and the integration level of the module is improved.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a side view of the structure of FIG. 1;
FIG. 3 is an enlarged schematic view of the structure at A in FIG. 2;
FIG. 4 is a schematic view of the structure of FIG. 2 in the direction B;
fig. 5 is a schematic diagram of the connection circuit of the present invention.
Detailed Description
To make the objects, technical solutions and advantages of the present invention more clearly understood by those skilled in the art, the present invention will be further described with reference to the accompanying drawings and examples.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "left", "right", "inner", "outer", "lateral", "vertical", and the like are the directions or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not indicate or imply that the device or element referred to must have a specific direction, and therefore, should not be construed as limiting the present invention.
As shown in fig. 1-5, the utility model discloses a vehicle-mounted high-power integrated package module, including power module body and the plastic casing 1 that is used for encapsulating the power module body, the power module body mainly includes chip part 2, insulating substrate 3, power terminal 4, signal terminal 5, thermistor 6 and heat dissipation base plate 7, bond through sealed glue between insulating substrate 3 and plastic casing 1 and cooperate the screw to carry out fixed connection simultaneously, heat dissipation base plate 7 sets up in insulating substrate 3's bottom one side in order to improve the heat dispersion of power module body; the chip part 2 comprises an insulated gate bipolar transistor and a diode chip, the signal terminal 5, the insulated gate bipolar transistor and the diode chip are welded on a conductive copper layer of the insulating substrate 3 through tin soldering, and the power terminal 4 is welded on the conductive copper layer of the insulating substrate 3 through ultrasonic welding; the chip part and the conducting layer of the corresponding insulating substrate 3 are electrically connected through aluminum wire bonding, and insulating silica gel for improving the pressure resistance of all elements is filled between the power module body and the plastic shell 1.
Referring to fig. 1, the power terminals 4 are distributed on two sides of the insulating substrate 3 in the length direction, and the signal terminals 5 are arranged in the upper area of the insulating substrate perpendicular to the insulating substrate 3; the chip part 2, the insulating substrate 3, the thermistor 6, the power terminal 4, the ultrasonic bonding area, the signal terminal base welding area and the aluminum wire are all covered with silica gel which is formed by insulating paint and used for improving the insulation and pressure resistance of all devices.
Referring to fig. 1-5, the power terminal 4 and the signal terminal 5 are both made of pure copper or copper alloy material, and the surface layer is made of bare copper or one of gold, nickel and tin-plated weldable metal materials; the plastic shell 1 is made of high-temperature-resistant and good-insulation plastic, such as PBT (polybutylene terephthalate), PPS (polyphenylene sulfide), nylon and the like; the power terminal 4 is wrapped by the injection molding shell in an injection molding manner through an injection molding insert process; the aluminum wire is made of pure aluminum or aluminum alloy materials and is bonded and connected to the chip part and the insulating substrate in an ultrasonic mode. The chip part 2 and the insulating substrate 3 are connected by welding through one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the power terminal 4 and the insulating substrate 3 are connected through one of Sn welding materials in SnPb, SnAg, SnAgCu and PbSnAg in an ultrasonic welding or welding way, and the welding temperature is between 150 and 350 ℃; the signal terminal 5 and the insulating substrate 3 and the thermistor 6 and the insulating substrate 3 are connected by welding through one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is 150-350 ℃. The utility model discloses a local parcel power terminal of moulding plastics of shell of moulding plastics improves power terminal resistance thermal stress and externally mounted gravitation, improves the whole fastness of power terminal. The power terminal, the signal terminal and the insulating substrate (DBC) are directly ultrasonically welded, so that the fatigue defect of the welding of the terminal in the traditional process is eliminated, the reliability of the connection of the power terminal, the signal terminal and the insulating substrate (DBC) is improved, and the high-reliability insulated gate bipolar transistor module is manufactured. Meanwhile, the signal terminal is directly welded on the conducting layer corresponding to the insulated substrate (DBC), so that the size of the module is further reduced on the premise of ensuring the current level, and the integration level of the module is improved.
The specific embodiments described herein are merely illustrative of the principles of the present invention and its efficacy, and are not intended to limit the invention. Modifications and variations can be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the present invention. Therefore, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical idea of the present invention shall be covered by the claims of the present invention.
Claims (3)
1. Automobile-used high-power integrated encapsulation module, including power module body and be used for encapsulating the plastic casing of power module body, its characterized in that: the power module body mainly comprises a chip part, an insulating substrate, a power terminal, a signal terminal, a thermistor and a heat dissipation substrate, wherein the insulating substrate is bonded with the plastic shell through sealant and is fixedly connected with the plastic shell through a screw, and the heat dissipation substrate is arranged on one side of the bottom of the insulating substrate to improve the heat dissipation performance of the power module body; the chip part comprises an insulated gate bipolar transistor and a diode chip, the signal terminal, the insulated gate bipolar transistor and the diode chip are all welded on a conductive copper layer of the insulating substrate through tin soldering, and the power terminal is welded on the conductive copper layer of the insulating substrate through ultrasonic welding; the chip part and the conductive layer of the corresponding insulating substrate are electrically connected through aluminum wire bonding, and insulating silica gel for improving the pressure resistance of all elements is filled between the power module body and the plastic shell; the power terminals are distributed on two sides of the length direction of the insulating substrate, and the signal terminals are arranged in the upper area of the insulating substrate in a manner of being perpendicular to the insulating substrate; the chip part, the insulating substrate, the thermistor, the power terminal, the ultrasonic bonding area, the signal terminal base welding area and the aluminum wire are all covered with silica gel which is formed by insulating paint and used for improving the insulation and pressure resistance of all devices.
2. The vehicular high-power integrated package module according to claim 1, wherein: the power terminal and the signal terminal are both made of pure copper or copper alloy materials, and the surface layer is one of bare copper or electroplated gold, nickel and tin weldable metal materials; the plastic shell is made of high-temperature-resistant plastic; the power terminal is wrapped by the injection molding shell in an injection molding mode through an injection molding insert process; the aluminum wire is made of pure aluminum or aluminum alloy materials and is bonded and connected to the chip part and the insulating substrate in an ultrasonic mode.
3. The vehicular high-power integrated package module according to claim 1 or 2, characterized in that: the chip part and the insulating substrate are connected by welding through one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the power terminal and the insulating substrate are connected through ultrasonic welding or welding by one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the signal terminal and the insulating substrate and the thermistor and the insulating substrate are connected through one of Sn-containing welding materials of SnPb, SnAg, SnAgCu and PbSnAg in a welding mode, and the welding temperature is 150-350 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120331587.XU CN215008188U (en) | 2021-02-05 | 2021-02-05 | Vehicle-mounted high-power integrated packaging module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120331587.XU CN215008188U (en) | 2021-02-05 | 2021-02-05 | Vehicle-mounted high-power integrated packaging module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215008188U true CN215008188U (en) | 2021-12-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120331587.XU Active CN215008188U (en) | 2021-02-05 | 2021-02-05 | Vehicle-mounted high-power integrated packaging module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215008188U (en) |
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2021
- 2021-02-05 CN CN202120331587.XU patent/CN215008188U/en active Active
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