CN113517236A - Novel low-inductance SiC Mosfet power module for vehicle - Google Patents
Novel low-inductance SiC Mosfet power module for vehicle Download PDFInfo
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- CN113517236A CN113517236A CN202110823621.XA CN202110823621A CN113517236A CN 113517236 A CN113517236 A CN 113517236A CN 202110823621 A CN202110823621 A CN 202110823621A CN 113517236 A CN113517236 A CN 113517236A
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- copper
- insulating ceramic
- sic mosfet
- ceramic substrate
- power module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
Abstract
The invention discloses a novel low-inductance SiC Mosfet power module for a vehicle, which comprises a power module body, wherein the power module body mainly comprises an insulating ceramic substrate and a SiC Mosfet chip arranged on the insulating ceramic substrate, the back surface of the chip is connected to a conductive copper layer power circuit etching area of the insulating ceramic substrate through a silver sintering surface, a front power electrode of the chip is connected with a copper foil through the silver sintering surface, the upper surface of the copper foil is connected to the conductive copper layer power circuit etching area of the insulating ceramic substrate through a copper wire, and a signal electrode of the chip is electrically connected with the conductive copper layer signal circuit etching area of the insulating ceramic substrate through an aluminum wire; the front surface of the insulating ceramic substrate is provided with a copper signal terminal, the back surface of the insulating ceramic substrate is provided with a heat dissipation copper substrate, the heat dissipation copper substrate is provided with an injection molding shell, and the injection molding shell is internally provided with high-temperature silica gel and sealed by a plastic upper cover.
Description
Technical Field
The invention relates to the technical field of power modules, in particular to a novel low-inductance SiC Mosfet power module for a vehicle.
Background
SiC mosfets have many advantages over conventional Si mosfets, but their expensive price limits their widespread use. With the maturity of SiC technology in recent years, the price of SiC Mosfet has been significantly reduced, the application range is further expanded, and the SiC Mosfet will be a new generation of mainstream low-loss power device in the near future. In the actual engineering application and design development process, the switching characteristics, static characteristics and power loss of the SiC mosfets often need to be analyzed so as to effectively evaluate the efficiency of the whole system. Therefore, it is necessary to establish an accurate SiC Mosfet model as a basis for system analysis and efficiency evaluation in engineering applications. In recent years, researchers at home and abroad have made intensive and advanced researches on the modeling of SiC mosfets. At present, the application of the SiC Mosfet power module in the field of new energy vehicles is more and more extensive, and the requirements of high operating junction temperature, high reliability and the like are provided for the SiC Mosfet power module, so that the high temperature resistance and high reliability of the connection of the SiC Mosfet power module near the chip end are required, and the connection process of the front side and the back side of the chip needs to be further improved.
Disclosure of Invention
The invention aims to solve the technical problem of providing a novel low-inductance SiC Mosfet vehicle power module which is resistant to high working junction and high in reliability and adopts a novel near-chip-end connection mode, aiming at the defects in the prior art.
The invention aims to provide a novel low-inductance SiC Mosfet power module for a vehicle, which comprises a SiC Mosfet power module body, wherein the SiC Mosfet power module body mainly comprises an insulating ceramic substrate and a SiC Mosfet chip which is arranged on the insulating ceramic substrate and can be subjected to double-sided silver sintering, the back surface of the SiC Mosfet chip is connected with a conductive copper layer power circuit etching area of the insulating ceramic substrate through a silver sintering surface, the front surface power electrode of the SiC Mosfet chip is connected with a copper foil through a silver sintering surface, the upper surface of the copper foil is connected with the conductive copper layer power circuit etching area of the insulating ceramic substrate through a copper wire, and the signal electrode of the SiC Mosfet chip is electrically connected with the conductive copper layer signal circuit etching area of the insulating ceramic substrate through an aluminum wire; the front of insulating ceramic base plate is provided with copper signal terminal, and the insulating ceramic base plate back is provided with the heat dissipation copper base plate, and the area of this heat dissipation copper base plate is greater than the area of insulating ceramic base plate, be provided with the shell of moulding plastics of taking ultrasonic power terminal including can cladding insulating ceramic base plate and SiC Mosfet chip on the heat dissipation copper base plate, be provided with high temperature silica gel in the shell of moulding plastics and seal through the plastics upper cover.
Furthermore, the insulating ceramic substrate is a silicon nitride AMB ceramic substrate, the upper layer and the lower layer of the insulating ceramic substrate are of copper layer structures without oxygen copper, and the middle layer is made of Si with high heat conductivity and high reliability3N4And the copper layer structures of the upper layer and the lower layer of the ceramic material layer are sintered on the middle layer through a silver sintering process.
Furthermore, the insulating ceramic substrate is connected with the heat dissipation copper substrate through soldering or silver sintering, a plurality of pin fins for heat dissipation are uniformly arranged at the bottom of the heat dissipation copper substrate, and the heat dissipation copper substrate is contacted with cooling liquid through the pin fins at the bottom to perform water cooling heat dissipation.
Furthermore, the injection molding shell is connected with the insulating ceramic substrate through an ultrasonic welding process, and a power terminal on the injection molding shell is used for being in circuit connection with an external device; the copper signal terminal is connected with the insulating ceramic substrate through soft soldering, and the other end of the copper signal terminal is used for being in circuit connection with an external structure PCB.
Further, the silver sintering surface is a connecting layer which is sintered by a silver sintering process by adopting silver paste or a silver film as a silver sintering material, the temperature of silver sintering is 200-400 ℃, and the sintering pressure is 5-50 Mpa.
Furthermore, the power electrode surface layers on the back surface and the front surface of the SiC Mosfet chip are covered with Ni/Pd/Au, Al/Ti/NiV/Ag or Al/NiV/Ag which can be used for a metal material layer of a silver sintering process.
Furthermore, the copper foil is made of oxygen-free copper with high electric conductivity and high thermal conductivity, and the surface of the copper foil is bare copper or plated with a layer of silver plating or gold plating which is convenient for carrying out a silver sintering process.
Further, the thickness of copper foil is one of 50um, 100um or 150 um.
Further, the wire diameter of the copper wire is one of 12mil, 16mil or 20 mil.
The invention has the beneficial technical effects that: (1) the back surface of the SiC Mosfet chip is connected with the insulating ceramic substrate by adopting a silver sintering process, and the SiC Mosfet chip is connected with a traditional soft soldering welding connection process, the melting point of a silver sintering connection material is above 900 ℃, the working temperature is greatly improved, and the SiC Mosfet chip has the characteristics of high reliability and strong temperature cycle resistance due to the material performance of the silver sintering connection material, and the power cycle and temperature cycle capacity of a module are improved; (2) the front surface of the SiC Mosfet chip is connected with a copper foil by adopting a silver sintering process, and the surface of the copper foil is connected to a conductive copper layer power circuit etching area of the insulating ceramic substrate by adopting a copper wire binding process; compared with the traditional chip surface direct aluminum wire binding process, the chip front sintering process and the application of the copper foil and copper wire binding technology greatly improve the power cycle resistance of the module and the reliability of the module; the copper foil with a certain thickness is attached to the surface of the chip and can be used for averaging the temperature of the chip as heat capacity, so that the temperature nonuniformity of the chip and the highest chip junction temperature are reduced; the module can be favorable for enduring a high junction temperature working environment, the reliability of the module in the aspects of power cycle resistance and temperature cycle resistance is improved, and the temperature distribution of the chip can be homogenized, so that the junction temperature of the chip is reduced.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a schematic view of the internal structure of the present invention;
FIG. 3 is an enlarged partial schematic view of FIG. 2;
FIG. 4 is a side cross-sectional structural schematic view of the present invention;
fig. 5 is a schematic circuit structure of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood by those skilled in the art, the present invention is further described with reference to the accompanying drawings and examples.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "inside", "outside", "lateral", "vertical", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not indicate or imply that the device or element referred to must have a specific orientation, and thus, should not be construed as limiting the present invention.
As shown in fig. 1-5, the novel low-inductance SiC Mosfet vehicular power module according to the present invention includes a SiC Mosfet vehicular power module body, the SiC Mosfet vehicle power module body mainly comprises an insulating ceramic substrate 3 and a SiC Mosfet chip 6 which is arranged on the insulating ceramic substrate 3 and can be subjected to double-sided silver sintering, wherein the back surface of the SiC Mosfet chip 6 is connected with a conductive copper layer power circuit etching area of the insulating ceramic substrate 3 through a silver sintering surface 11, the front power electrode of the SiC Mosfet chip 6 is connected with a copper foil 5 through the silver sintering surface 11, the upper surface of the copper foil 5 is connected to the conductive copper layer power circuit etching area of the insulating ceramic substrate 3 through a copper wire 7 by a copper wire bonding process, the signal electrode of the SiC Mosfet chip 6 is electrically connected with the conductive copper layer signal circuit etching area of the insulating ceramic substrate 3 through an aluminum wire 8 and an aluminum wire binding process is adopted to electrically connect the signal and the control circuit; the front of insulating ceramic base plate 3 is provided with copper signal terminal 2, and the 3 backs of insulating ceramic base plate are provided with heat dissipation copper base plate 4, and the area of this heat dissipation copper base plate 4 is greater than the area of insulating ceramic base plate 3, be provided with on the heat dissipation copper base plate 4 can be with insulating ceramic base plate 3 and the SiC Mosfet chip 6 cladding including take the shell 1 of moulding plastics of ultrasonic power terminal, be provided with high temperature silica gel 10 in the shell 1 of moulding plastics and seal through plastics upper cover 9.
Referring to fig. 1 to 4, the insulating ceramic substrate 3 is connected to the heat dissipating copper substrate 4 by soldering 12 or silver sintering, and a plurality of pin fins for dissipating heat are uniformly arranged at the bottom of the heat dissipating copper substrate 4, and the heat dissipating copper substrate 4 is contacted with a cooling liquid by the pin fins at the bottom to perform water cooling. The injection molding shell 1 is connected with the insulating ceramic substrate 3 through an ultrasonic welding process, and a power terminal on the injection molding shell 1 is used for being in circuit connection with an external device; the copper signal terminal 2 and the insulating ceramic substrate 3 are connected by soldering, and the other end of the copper signal terminal 2 is used for circuit connection with an external structure PCB. The silver sintering surface 11 is a connection layer which is made of silver paste or a silver film serving as a silver sintering material and is sintered through a silver sintering process, the temperature of silver sintering is 200-400 ℃, and the sintering pressure is 5-50 Mpa.
The power electrode surface layers on the back and the front of the SiC Mosfet chip 6 are covered with metal material layers such as Ni/Pd/Au, Al/Ti/NiV/Ag or Al/NiV/Ag which can be used for a silver sintering process. The copper foil 5 is made of oxygen-free copper with high electric conductivity and high thermal conductivity, and the surface of the copper foil 5 is bare copper or plated with a layer of silver plating or gold plating which is convenient for carrying out a silver sintering process. The thickness of the copper foil 5 includes, but is not limited to, thicknesses of 50um, 100um, 150um, etc.; the wire diameter of the copper wire 7 includes, but is not limited to, a diameter of 12mil, 16mil, or 20 mil.
Referring to fig. 4, the insulating ceramic substrate 3 is a silicon nitride AMB ceramic substrate, AMB is an abbreviation of Active Metal Bonding (AMB), which is an Active Metal brazing copper-clad technology, and high-temperature metallurgical Bonding of aluminum nitride and oxygen-free copper is realized by Active Metal brazing filler Metal. The upper layer and the lower layer of the insulating ceramic substrate are of copper layer structures of oxygen-free copper, and the middle layer of the insulating ceramic substrate is of Si with high heat conduction and high reliability3N4And the copper layer structures of the upper layer and the lower layer of the ceramic material layer are sintered on the middle layer through a silver sintering process.
According to the invention, the back surface of the SiC Mosfet chip is connected with the insulating ceramic substrate by adopting a silver sintering process, and compared with the traditional soft soldering welding connection process, the melting point of the silver sintering connection material is above 900 ℃, the working temperature is greatly improved, and the silver sintering connection material has the characteristics of high reliability and strong temperature cycle resistance due to the material performance, so that the power cycle and temperature cycle capacity of the module are improved; the front surface of the SiC Mosfet chip is connected with a copper foil by adopting a silver sintering process, and the surface of the copper foil is connected to a conductive copper layer power circuit etching area of the insulating ceramic substrate by adopting a copper wire binding process; compared with the traditional chip surface direct aluminum wire binding process, the chip front sintering process and the application of the copper foil and copper wire binding technology greatly improve the power cycle resistance of the module and the reliability of the module; the copper foil with a certain thickness is attached to the surface of the chip and can be used for averaging the temperature of the chip as heat capacity, so that the temperature nonuniformity of the chip and the highest chip junction temperature are reduced; the module can be favorable for enduring a high junction temperature working environment, the reliability of the module in the aspects of power cycle resistance and temperature cycle resistance is improved, and the temperature distribution of the chip can be homogenized, so that the junction temperature of the chip is reduced.
The specific embodiments described herein are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (9)
1. The utility model provides a novel automobile-used power module of low inductance SiC Mosfet, includes the automobile-used power module body of SiC Mosfet, its characterized in that: the SiC Mosfet vehicle power module body mainly comprises an insulating ceramic substrate and a SiC Mosfet chip which is arranged on the insulating ceramic substrate and can be subjected to double-sided silver sintering, wherein the back surface of the SiC Mosfet chip is connected to a conductive copper layer power circuit etching area of the insulating ceramic substrate through a silver sintering surface, a front power electrode of the SiC Mosfet chip is connected with a copper foil through a silver sintering surface, the upper surface of the copper foil is connected to the conductive copper layer power circuit etching area of the insulating ceramic substrate through a copper wire, and a signal electrode of the SiC Mosfet chip is electrically connected with the conductive copper layer signal circuit etching area of the insulating ceramic substrate through an aluminum wire; the front of insulating ceramic base plate is provided with copper signal terminal, and the insulating ceramic base plate back is provided with the heat dissipation copper base plate, and the area of this heat dissipation copper base plate is greater than the area of insulating ceramic base plate, be provided with the shell of moulding plastics of taking ultrasonic power terminal including can cladding insulating ceramic base plate and SiC Mosfet chip on the heat dissipation copper base plate, be provided with high temperature silica gel in the shell of moulding plastics and seal through the plastics upper cover.
2. The novel low inductance SiC Mosfet vehicular power module of claim 1, wherein: the insulating ceramic substrate is a silicon nitride AMB ceramic substrate, the upper layer and the lower layer of the insulating ceramic substrate are of copper layer structures of oxygen-free copper, and the middle layer of the insulating ceramic substrate is of Si with high heat conductivity and high reliability3N4And the copper layer structures of the upper layer and the lower layer of the ceramic material layer are sintered on the middle layer through a silver sintering process.
3. The novel low inductance SiC Mosfet vehicular power module according to claim 1 or 2, characterized in that: the insulating ceramic substrate is connected with the heat dissipation copper substrate through soldering or silver sintering, a plurality of pin fins for heat dissipation are uniformly arranged at the bottom of the heat dissipation copper substrate, and the heat dissipation copper substrate is in contact with cooling liquid through the pin fins at the bottom to perform water cooling heat dissipation.
4. The novel low inductance SiC Mosfet vehicular power module of claim 3, wherein: the injection molding shell is connected with the insulating ceramic substrate through an ultrasonic welding process, and a power terminal on the injection molding shell is used for being in circuit connection with an external device; the copper signal terminal is connected with the insulating ceramic substrate through soft soldering, and the other end of the copper signal terminal is used for being in circuit connection with an external structure PCB.
5. The novel low inductance SiC Mosfet vehicular power module of claim 1, 2 or 4, wherein: the silver sintering surface is a connecting layer which is sintered by adopting silver paste or a silver film as a silver sintering material through a silver sintering process, the temperature of the silver sintering is 200-400 ℃, and the sintering pressure is 5-50 Mpa.
6. The novel low inductance SiC Mosfet vehicular power module of claim 5, wherein: the power electrode surface layers on the back side and the front side of the SiC Mosfet chip are covered with Ni/Pd/Au, Al/Ti/NiV/Ag or Al/NiV/Ag which can be used for a metal material layer of a silver sintering process.
7. The novel low inductance SiC Mosfet vehicular power module of claim 6, wherein: the copper foil is made of oxygen-free copper with high electric conductivity and high heat conductivity, and the surface of the copper foil is bare copper or plated with a layer of silver plating or gold plating which is convenient for carrying out a silver sintering process.
8. The novel low inductance SiC Mosfet vehicular power module of claim 6 or 7, wherein: the thickness of copper foil is one of 50um, 100um or 150 um.
9. The novel low inductance SiC Mosfet vehicular power module of claim 6, wherein: the wire diameter of the copper wire is one of 12mil, 16mil or 20 mil.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110823621.XA CN113517236A (en) | 2021-07-21 | 2021-07-21 | Novel low-inductance SiC Mosfet power module for vehicle |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110823621.XA CN113517236A (en) | 2021-07-21 | 2021-07-21 | Novel low-inductance SiC Mosfet power module for vehicle |
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| CN113517236A true CN113517236A (en) | 2021-10-19 |
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| CN202110823621.XA Pending CN113517236A (en) | 2021-07-21 | 2021-07-21 | Novel low-inductance SiC Mosfet power module for vehicle |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113985122A (en) * | 2021-11-01 | 2022-01-28 | 苏州亿马半导体科技有限公司 | SiC power analysis method based on SolidWorks Flow Simulation |
| CN115172526A (en) * | 2022-07-25 | 2022-10-11 | 中国电子科技集团公司第十三研究所 | Preparation method of ceramic base, ceramic base and packaging method of micro-optical detector |
-
2021
- 2021-07-21 CN CN202110823621.XA patent/CN113517236A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113985122A (en) * | 2021-11-01 | 2022-01-28 | 苏州亿马半导体科技有限公司 | SiC power analysis method based on SolidWorks Flow Simulation |
| CN115172526A (en) * | 2022-07-25 | 2022-10-11 | 中国电子科技集团公司第十三研究所 | Preparation method of ceramic base, ceramic base and packaging method of micro-optical detector |
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