CN216849931U - Crimping formula power device inner structure - Google Patents

Abstract

The utility model discloses an internal structure of a crimping type power device, which comprises: the circuit board comprises a collector circuit board, an emitter circuit board and a PCB grid circuit board, wherein the collector circuit board is provided with a plurality of chip subunits; the emitting electrode circuit board is provided with a conductive buffer layer, each chip subunit is connected with the conductive buffer layer through a boss, and the PCB grid electrode circuit board is connected with the conductive buffer layer. Aiming at the limitation that a rigid compression joint conducting circuit cannot realize large-area large-current devices at present, the connection quantity of chips is increased by integrating the package of Nolay chips into a unit structure; aiming at the defect that the large current path capacity of a conductive arm above a single short-circuit chip is limited when a device is short-circuited in an elastic crimping current path, the structure of the utility model belongs to a rigid crimping structure and can overcome the problem of short-circuit co-current.

Description

Crimping formula power device inner structure

Technical Field

The utility model belongs to the field of power semiconductor device packaging, and particularly relates to an internal structure of a compression joint type power device.

Background

Since the beginning of 1986, Insulated Gate Bipolar Transistor (IGBT) was produced formally and is gradually serialized, its packaging quality and reliability always affect its use and popularization in the fields of industrial control, locomotive traction, power system and other high-power applications.

The development in the fields of the existing electric power system, locomotive traction and the like puts higher requirements on the device power of the IGBT. At present, the packaging of the high-power IGBT is generally in two forms, one is a bottom plate insulation module type packaging, the bottom plate insulation module type packaging is composed of a chip, a bottom plate, a copper-clad ceramic substrate, a bonding wire, a sealing material, an insulation shell, a power terminal and the like, the chip is isolated from the external environment (water, air and dust) through pouring insulation materials such as silica gel or epoxy resin into the module, and the service life of the device is shortened. The other is similar to a thyristor, a flat plate compression joint type package is composed of a ceramic tube shell and a copper electrode, and a chip is in pressure contact with the electrode. The full-crimping IGBT package realizes full-crimping contact by matching an upper electrode and a lower electrode with multiple layers of materials and a silicon wafer, and eliminates device failure caused by welding fatigue.

In the prior art, a conductor which is level with a single semiconductor unit in a shell is used, the conductor is laminated layer by layer, and the purpose that current flows from a collector to an emitter is achieved in a crimping mode. Very high machining precision components (typically to within 5 μm) are used to ensure that the component thicknesses match as closely as possible and to provide end users with such press components (e.g., heat sinks, etc.), with extremely tight tolerances for parallelism, planarity, roughness, etc., required for multi-chip pressure contact devices. Under the conditions of various materials, high required precision and large processing amount, the method provides great challenges for the processing capacity, quality control capacity and the like of suppliers and manufacturers, and is also the same in large-area multi-chip pressure contact equipment. Tight parallelism, flatness tolerance tolerances of the clamping components also become more difficult to achieve over large surface areas.

Or a stack of coil springs flush with the individual semiconductor units within the housing to reduce the force/displacement ratio. In this way, for a given semiconductor unit thickness variation or a given parallelism, flatness tolerance variation, the contact pressure variation is minimized. The spring assembly of manufacturer ABB bears the pressure contraction, compensates the difference in height that the machining precision brought, and the electric current carries out the UNICOM through the peripheral bridge arm of dish spring, and the uneven problem of pressure distribution and the lower problem of the horizontal current conducting plate fatigue life of improvement scheme two of scheme 1 are effectively overcome to this mode, but the conductive path ability on the single chip is limited, can't bear the short circuit cocurrent of device, probably takes place the risk that the fusing brought the device explosion.

SUMMERY OF THE UTILITY MODEL

The utility model aims to overcome the defects in the prior art, and provides a compression joint type power device, aiming at the limitation that a rigid compression joint conduction circuit cannot realize a large-area large-current device at present, a lug boss structure is independently connected with a chip, so that the thermal stress is reduced, and the current is increased by increasing the area of the device; aiming at the defect that the large current path capacity of a conductive arm above a single short-circuit chip is limited when a device is short-circuited in an elastic crimping current path, the structure of the utility model belongs to a rigid crimping structure and can overcome the problem of short-circuit co-current.

In order to solve the problems of the prior art, the utility model discloses

A press-fit power device internal structure comprising: the chip comprises a collector circuit board, an emitter circuit board and a PCB grid circuit board, wherein the collector circuit board is provided with a plurality of chip subunits; the emitting electrode circuit board is provided with a conductive buffer layer, each chip subunit is connected with the conductive buffer layer through a boss, and the PCB grid electrode circuit board is connected with the conductive buffer layer.

Further, the air conditioner is provided with a fan,

the chip subunit comprises an upper molybdenum sheet, an IGBT chip and a lower molybdenum sheet, wherein one surface of the IGBT chip is connected with the upper molybdenum sheet, and the other surface of the IGBT chip is connected with the lower molybdenum sheet.

Further, the air conditioner is provided with a fan,

the grid circuit board is provided with a grid needle, and the grid circuit board is connected with the IGBT chip through the grid needle.

Further, the air conditioner is provided with a fan,

the grid needle guide structure is characterized by further comprising an insulation limiting frame, wherein the insulation limiting frame is provided with a boss guide hole and a grid needle guide hole.

Further, the air conditioner is provided with a fan,

the collector circuit board and/or the emitter circuit board are made of pure copper, and the surfaces of the collector circuit board and/or the emitter circuit board are plated with nickel.

Further, the air conditioner is provided with a fan,

the conductive buffer layer is made of any one of aluminum, tin or zinc.

Further, the air conditioner is provided with a fan,

and the contact surface of the PCB and the grid in the PCB grid circuit board is plated with nickel and gold.

Further, the air conditioner is characterized in that,

the insulating limit frame is made of polytetrafluoroethylene or PPS.

The utility model has the following beneficial effects:

the pressure stress balance of the chip of the rigid compression joint module is effectively improved, and meanwhile, the through-current capacity of the module is greatly improved.

Drawings

FIG. 1 is a schematic structural diagram of an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of an embodiment of the present invention;

FIG. 3 is a schematic structural diagram of an embodiment of the present invention;

FIG. 4 is a schematic diagram of a chip subunit structure according to an embodiment of the present invention;

FIG. 5 is a schematic view of a gate circuit board according to an embodiment of the present invention;

FIG. 6 is a schematic diagram of a gate pin structure according to an embodiment of the present invention;

FIG. 7 is a schematic structural diagram of an insulation limit frame according to an embodiment of the present invention;

FIG. 8 is a schematic view of a boss configuration according to an embodiment of the present invention;

fig. 9 is a schematic structural diagram of a conductive buffer layer according to an embodiment of the utility model.

Reference numerals

1: a collector circuit board; 2: an emitter circuit board; 3: a conductive buffer layer; 4: an insulating limit frame; 5: a gate circuit board; 6: a boss; 7: a chip subunit; 8: a grid needle; 9: a conductive buffer layer.

Detailed Description

The utility model is further described below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.

As shown in fig. 1 to 3, an internal structure of a press-fit power device of the present invention includes: the circuit board comprises a collector circuit board 1, an emitter circuit board 2 and a PCB grid circuit board 5, wherein the collector circuit board 1 is provided with a plurality of chip subunits 7; the emitting electrode circuit board 2 is provided with a conductive buffer layer 3, each chip subunit 7 is connected with the conductive buffer layer 3 through a boss 6, and the PCB grid circuit board 5 is connected with the conductive buffer layer 3. As shown in fig. 9, the conductive buffer layer 3 is used for stress buffering and electrical and thermal conduction, and the conductive buffer layer 3 is made of any one of aluminum, tin, and zinc. The collector circuit board 1 and/or the emitter circuit board 2 are made of pure copper and plated with nickel on the surfaces.

As shown in fig. 4, each chip subunit 7 includes an upper molybdenum sheet 7-1, an IGBT chip 7-2, and a lower molybdenum sheet 7-3, where one surface of the IGBT chip 7-2 is connected to the upper molybdenum sheet 7-1, and the other surface is connected to the lower molybdenum sheet 7-3. The lug boss 6 is connected through the upper molybdenum sheet 7-1, the shape of the lug boss 6 is matched with that of the upper molybdenum sheet 7-1 as shown in figure 8, and the collector circuit board 1 is connected through the lower molybdenum sheet 7-3.

As shown in fig. 5-6, the gate circuit board 5 is provided with a gate pin 8, and the gate circuit board 5 is connected to the IGBT chip 7-2 through the gate pin 8. And the contact surface of the PCB and the grid in the PCB grid circuit board 5 is plated with nickel and gold.

As shown in fig. 7, the grid-connected device further comprises an insulating limit frame 4, wherein the insulating limit frame 4 is provided with a boss guide hole 4-2 and a grid needle guide hole 4-1. The insulating limit frame 4 is made of polytetrafluoroethylene or PPS.

A manufacturing method of an internal structure of a compression joint type power device comprises the following steps:

selecting manufacturing materials of an upper molybdenum sheet 7-1, a lower molybdenum sheet 7-3, an IGBT chip 7-2, a ceramic tube shell E-pole copper plate (an emitter circuit board 2), a conductive buffer layer 3, an insulating limit frame 4, a PCB grid circuit board 5, a ceramic tube shell C-pole copper plate (a collector circuit board 1) and a grid needle 8;

bosses 6 are arranged on the surface of the E-pole copper plate of the ceramic tube shell, the height difference between the bosses 6 is controlled within 10um, and nickel is plated on the surface of the E-pole copper plate of the ceramic tube shell;

laying a conductive buffer layer 3 on an E-pole copper plate of a ceramic tube shell, connecting a PCB grid circuit board 5 with the conductive buffer layer 3, and leading out a grid from the PCB grid circuit board 5 through a grid pin 8;

the insulation limiting frame 4 is provided with a boss guide hole 4-2 and a grid needle guide hole 4-1, the boss 6 is inserted into the boss guide hole 4-2, and the grid needle 8 is inserted into the grid needle guide hole 4-1;

sintering the upper molybdenum sheet 7-1 and the lower molybdenum sheet 7-3 on two sides of the IGBT chip 7-2 through a silver sintering process to form a chip subunit 7;

the upper molybdenum sheet 7-1 is connected with the boss 6;

The lower molybdenum sheet 7-3 is connected with a C-pole copper plate of the ceramic tube shell.

And finally, placing the internal structure of the compression joint type power device in the tube shell, and sealing the tube shell by using a cold pressure welding process.

It should be noted that, in this document, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Also in the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like are used in the orientations and positional relationships indicated in the drawings, which are merely for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. In the drawings of the present invention, the filling pattern is only for distinguishing the layers, and is not limited to any other.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.

Claims (8)

1. A pressure welding type power device internal structure is characterized by comprising: the circuit board comprises a collector circuit board (1), an emitter circuit board (2) and a PCB grid circuit board (5), wherein the collector circuit board (1) is provided with a plurality of chip subunits (7); the emitting electrode circuit board (2) is provided with a conductive buffer layer (3), each chip subunit (7) is connected with the conductive buffer layer (3) through a boss (6), and the PCB grid circuit board (5) is connected with the conductive buffer layer (3).

2. The internal structure of the press-fit power device according to claim 1, wherein:

the chip subunit (7) comprises an upper molybdenum sheet (7-1), an IGBT chip (7-2) and a lower molybdenum sheet (7-3), wherein one surface of the IGBT chip (7-2) is connected with the upper molybdenum sheet (7-1), and the other surface of the IGBT chip is connected with the lower molybdenum sheet (7-3).

3. The internal structure of the press-fit power device according to claim 2, wherein:

the grid circuit board (5) is provided with a grid needle (8), and the grid circuit board (5) is connected with the IGBT chip (7-2) through the grid needle (8).

4. The internal structure of the press-fit power device according to claim 3, wherein:

the grid needle positioning structure is characterized by further comprising an insulation limiting frame (4), wherein the insulation limiting frame (4) is provided with a boss guide hole (4-2) and a grid needle guide hole (4-1).

5. The internal structure of the press-fit power device according to claim 1, wherein:

the collector circuit board (1) and/or the emitter circuit board (2) are made of pure copper and plated with nickel on the surfaces.

6. The internal structure of the press-fit power device according to claim 1, wherein:

the conductive buffer layer (3) is made of any one of aluminum, tin or zinc.

7. The internal structure of the press-fit power device according to claim 1, wherein:

and the contact surface of the PCB and the grid in the PCB grid circuit board (5) is plated with nickel and gold.

8. The internal structure of the press-fit power device according to claim 4, wherein:

The insulating limit frame (4) is made of polytetrafluoroethylene or PPS.

Images