CN102054826A - Novel baseplate-free power module - Google Patents
Novel baseplate-free power module Download PDFInfo
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- CN102054826A CN102054826A CN 201010530420 CN201010530420A CN102054826A CN 102054826 A CN102054826 A CN 102054826A CN 201010530420 CN201010530420 CN 201010530420 CN 201010530420 A CN201010530420 A CN 201010530420A CN 102054826 A CN102054826 A CN 102054826A
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- insulated substrate
- novel
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- power module
- insulated
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000010949 copper Substances 0.000 claims abstract description 27
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims description 45
- 238000003466 welding Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 18
- 229910000831 Steel Inorganic materials 0.000 claims description 16
- 239000010959 steel Substances 0.000 claims description 16
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910007637 SnAg Inorganic materials 0.000 claims description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000004033 plastic Substances 0.000 claims description 8
- 229920003023 plastic Polymers 0.000 claims description 8
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- 239000004677 Nylon Substances 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- 229920001778 nylon Polymers 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000010992 reflux Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 241001124569 Lycaenidae Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000014987 copper Nutrition 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a novel baseplate-free power module comprising insulated gate bipolar transistor chips, a diode chip, an insulated baseplate, a power terminal, a power column, aluminum wires and a shell. The insulated gate bipolar transistor chips and the diode chip are soldered on a conductive copper layer of the insulated baseplate in a reflux way, the power terminal is spliced and matched with the power column, and the power column is directly soldered on the insulated baseplate. The insulated gate bipolar transistor chips and the diode chip, the insulated gate bipolar transistor chips as well as the diode chip and the corresponding conductive layer of the insulated baseplate are electrically connected through bonding of the aluminum wires.
Description
Technical field
The invention belongs to the power electronics field, relate to a kind of power model, specifically a kind of power model of novel no base plate.
Background technology
Insulated gate bipolar transistor (IGBT) module is at frequency converter at present, inverter type welder, induction heating, track traffic and wind energy, the application in fields such as solar power generation more and more widely, more and more higher to the IGBT module reliability requirement, what require that device volume and quality do is more and more littler, and price is more and more lower.
Summary of the invention
The objective of the invention is to design a kind of novel no backplane power module.
What the present invention will solve is that existing IGBT module reliability is not high, and volume and quality are big, problem of ultra-high price.
Technical scheme of the present invention is:
It comprises insulated gate bipolar transistor chip, diode chip for backlight unit, insulated substrate, power terminal, power cylinder, aluminum steel and shell, and insulated gate bipolar transistor chip, diode chip for backlight unit and power cylinder are welded on the insulated substrate conductive copper layer by reflow soldering; Realize being electrically connected by the aluminum steel bonding between insulated gate bipolar transistor chip and the diode chip for backlight unit, realize being electrically connected by the aluminum steel bonding between the corresponding conductive layer of insulated gate bipolar transistor chip and insulated substrate, realize being electrically connected by the aluminum steel bonding between the corresponding conductive layer of diode chip for backlight unit and insulated substrate, power terminal and power cylinder patch cooperation, and the power cylinder directly is welded on the insulated substrate.
Described insulated substrate comprises two-layer copper layer and one deck ceramic layer, two-layer copper layer sandwich one deck ceramic layer.The used material of the copper layer of insulated substrate is fine copper or copper alloy; The used material of ceramic layer is aluminium oxide AL203 or aluminium nitride ALN or beryllium oxide BeO, or insulation property and the good ceramic material of heat dispersion.
The power cylinder is made with fine copper or Cu alloy material, and the top layer of power cylinder is a naked copper, perhaps a kind of in electrogilding, nickel, the tin; Power terminal is made with fine copper or Cu alloy material, a kind of in top layer naked copper or electrogilding, nickel, the tin.Shell is a plastic casing, uses PBT, PPS, and a kind of the making in the nylon, or similar high temperature resistant, the good plastics of insulation property are made; Aluminum steel is made with fine aluminium or aluminum alloy materials.
Edge grid bipolar transistor chips welding is on insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Diode chip for backlight unit is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.The power cylinder is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Thermistor is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.
Insulated substrate is the arc insulated substrate, and the flexibility of its arc-shaped bend predeformation is determined on request, is the arc insulated substrate of 55mm for length, and degree of crook is controlled at arc and rises out between negative 0.10mm of limit end and the 0.15mm.
Advantage of the present invention is: the present invention adopts no base plate technology, and the IGBT module of production has reduced IGBT module cost and thermal resistance; Adopt power terminal and power cylinder to patch cooperation simultaneously, reduced the stress that power cylinder welding portion is subjected to, improve the IGBT module reliability.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the structural representation of insulated substrate (DBC).
Embodiment:
The invention will be further described below in conjunction with drawings and Examples.
As shown in Figure 1, the present invention includes insulated gate bipolar transistor chip 9, diode chip for backlight unit 6, insulated substrate (DBC) 1, power terminal 3, power cylinder 2, aluminum steel 8, plastic casing 4, silicon gel 5, thermistor 7, fluid sealant etc.Insulated gate bipolar transistor chip 9, diode chip for backlight unit 6 and power cylinder 2 are welded on insulated substrate (DBC) 1 conductive copper layer by reflow soldering.Cross aluminum steel 8 bondings between insulated gate bipolar transistor chip 9 and the diode chip for backlight unit 6 and realize being electrically connected, realize being electrically connected by aluminum steel 8 bondings between insulated gate bipolar transistor chip 9 and insulated substrate (DBC) the 1 corresponding conductive layer.Realize being electrically connected by aluminum steel 8 bondings between diode chip for backlight unit 6 and insulated substrate (DBC) the 1 corresponding conductive layer.Plastic casing 4 and insulated substrate (DBC) 1 is bonding by fluid sealant.Parts such as insulated gate bipolar transistor chip 9, diode chip for backlight unit 6, insulated substrate (DBC) 1, power cylinder 2, aluminum steel 8, thermistor 7 are by covering Silicon-On-Insulator gel 5, improve withstand voltage between each original paper.Power terminal and power cylinder patch cooperation, reduce the stress that power cylinder welding portion is subjected to.The power cylinder directly is welded on the insulated substrate (DBC).
Described insulated substrate 1 comprises two-layer copper layer 100 and one deck ceramic layer 102, two-layer copper layer 100 sandwich one deck ceramic layer 102.The copper layer 100 used material of insulated substrate are fine copper or copper alloy; Ceramic layer 102 used materials are aluminium oxide AL2O3 or aluminium nitride ALN or beryllium oxide BeO, or insulation property and the good ceramic material of heat dispersion.
Edge grid bipolar transistor chip 9 is welded on the insulated substrate 1, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Diode chip for backlight unit 6 is welded on the insulated substrate 1, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Power cylinder 2 is welded on the insulated substrate 1, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.Thermistor 7 is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.
Claims (10)
1. novel no backplane power module, comprise insulated gate bipolar transistor chip, diode chip for backlight unit, insulated substrate, power terminal, power cylinder, aluminum steel and shell, insulated gate bipolar transistor chip, diode chip for backlight unit and power cylinder are welded on the insulated substrate conductive copper layer by reflow soldering; Realize being electrically connected by the aluminum steel bonding between insulated gate bipolar transistor chip and the diode chip for backlight unit, realize being electrically connected by the aluminum steel bonding between the corresponding conductive layer of insulated gate bipolar transistor chip and insulated substrate, realize being electrically connected by the aluminum steel bonding between the corresponding conductive layer of diode chip for backlight unit and insulated substrate, it is characterized in that power terminal and power cylinder patch cooperation, the power cylinder directly is welded on the insulated substrate.
2. novel no backplane power module according to claim 1 is characterized in that described insulated substrate comprises two-layer copper layer and one deck ceramic layer, two-layer copper layer sandwich one deck ceramic layer.
3. novel no backplane power module according to claim 1 is characterized in that the used material of copper layer of insulated substrate is fine copper or copper alloy; The used material of ceramic layer is aluminium oxide AL2O3 or aluminium nitride ALN or beryllium oxide BeO, or insulation property and the good ceramic material of heat dispersion.
4. novel no backplane power module according to claim 1 is characterized in that the power cylinder makes with fine copper or Cu alloy material, and the top layer of power cylinder is a naked copper, perhaps a kind of in electrogilding, nickel, the tin; Power terminal is made with fine copper or Cu alloy material, a kind of in top layer naked copper or electrogilding, nickel, the tin.
5. novel no backplane power module according to claim 1 is characterized in that shell is a plastic casing, uses PBT, PPS, and a kind of the making in the nylon, or similar high temperature resistant, the good plastics of insulation property are made; Aluminum steel is made with fine aluminium or aluminum alloy materials.
6. novel no backplane power module according to claim 1 is characterized in that edge grid bipolar transistor chips welding on insulated substrate, and used welding material is Snpb, SnAg, SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.
7. novel no backplane power module according to claim 1 is characterized in that diode chip for backlight unit is welded on the insulated substrate, and used welding material is Snpb, SnAg, SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.
8. novel no backplane power module according to claim 1 is characterized in that the power cylinder is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.
9. novel no backplane power module according to claim 1 is characterized in that thermistor is welded on the insulated substrate, and used welding material is Snpb, SnAg, and SnAgCu, a kind of among the PbSnAg, the welding maximum temperature is controlled between 100 ℃ to 400 ℃.
10. novel no backplane power module according to claim 1, it is characterized in that insulated substrate is the arc insulated substrate, the flexibility of its arc-shaped bend predeformation is determined on request, for length is the arc insulated substrate of 55mm, and degree of crook is controlled at arc and rises out between negative 0.10mm of limit end and the 0.15mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010530420 CN102054826B (en) | 2010-11-04 | 2010-11-04 | Novel baseplate-free power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010530420 CN102054826B (en) | 2010-11-04 | 2010-11-04 | Novel baseplate-free power module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102054826A true CN102054826A (en) | 2011-05-11 |
| CN102054826B CN102054826B (en) | 2013-01-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010530420 Active CN102054826B (en) | 2010-11-04 | 2010-11-04 | Novel baseplate-free power module |
Country Status (1)
| Country | Link |
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| CN (1) | CN102054826B (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738139A (en) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | Novel packaged power module |
| CN103441120A (en) * | 2013-08-22 | 2013-12-11 | 华东光电集成器件研究所 | Piled integrated circuit |
| CN103795272A (en) * | 2014-01-25 | 2014-05-14 | 嘉兴斯达半导体股份有限公司 | Three-phase rectifier bridge power module |
| CN104900617A (en) * | 2015-05-04 | 2015-09-09 | 嘉兴斯达半导体股份有限公司 | Internal connection structure of power semiconductor module |
| CN106783773A (en) * | 2016-12-13 | 2017-05-31 | 中航（重庆）微电子有限公司 | A kind of Non-insulation bi-tower type diode module |
| CN106816445A (en) * | 2017-01-22 | 2017-06-09 | 上海道之科技有限公司 | A kind of IGBT module |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1065296A (en) * | 1996-08-22 | 1998-03-06 | Mitsubishi Materials Corp | Ceramic circuit board |
| CN1219767A (en) * | 1997-12-08 | 1999-06-16 | 东芝株式会社 | Package for semiconductor power device and method for assembling the same |
| US20060056213A1 (en) * | 2004-08-21 | 2006-03-16 | Joosang Lee | Power module package having excellent heat sink emission capability and method for manufacturing the same |
| CN1857043A (en) * | 2003-09-25 | 2006-11-01 | 株式会社东芝 | Ceramic circuit board, method for making the same, and power module |
| US20090127691A1 (en) * | 2007-11-16 | 2009-05-21 | Lee Keun-Hyuk | Semiconductor Power Module Packages with Simplified Structure and Methods of Fabricating the Same |
| US20090244848A1 (en) * | 2008-03-28 | 2009-10-01 | Lim Seung-Won | Power Device Substrates and Power Device Packages Including the Same |
| CN101582417A (en) * | 2009-04-02 | 2009-11-18 | 嘉兴斯达微电子有限公司 | Power module for controlling leading out of terminal spring |
| CN202142525U (en) * | 2010-11-04 | 2012-02-08 | 嘉兴斯达微电子有限公司 | Novel power module without base plate |
-
2010
- 2010-11-04 CN CN 201010530420 patent/CN102054826B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1065296A (en) * | 1996-08-22 | 1998-03-06 | Mitsubishi Materials Corp | Ceramic circuit board |
| CN1219767A (en) * | 1997-12-08 | 1999-06-16 | 东芝株式会社 | Package for semiconductor power device and method for assembling the same |
| CN1857043A (en) * | 2003-09-25 | 2006-11-01 | 株式会社东芝 | Ceramic circuit board, method for making the same, and power module |
| US20060056213A1 (en) * | 2004-08-21 | 2006-03-16 | Joosang Lee | Power module package having excellent heat sink emission capability and method for manufacturing the same |
| US20090127691A1 (en) * | 2007-11-16 | 2009-05-21 | Lee Keun-Hyuk | Semiconductor Power Module Packages with Simplified Structure and Methods of Fabricating the Same |
| US20090244848A1 (en) * | 2008-03-28 | 2009-10-01 | Lim Seung-Won | Power Device Substrates and Power Device Packages Including the Same |
| CN101582417A (en) * | 2009-04-02 | 2009-11-18 | 嘉兴斯达微电子有限公司 | Power module for controlling leading out of terminal spring |
| CN202142525U (en) * | 2010-11-04 | 2012-02-08 | 嘉兴斯达微电子有限公司 | Novel power module without base plate |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102738139A (en) * | 2012-06-05 | 2012-10-17 | 嘉兴斯达微电子有限公司 | Novel packaged power module |
| CN103441120A (en) * | 2013-08-22 | 2013-12-11 | 华东光电集成器件研究所 | Piled integrated circuit |
| CN103441120B (en) * | 2013-08-22 | 2016-01-27 | 华东光电集成器件研究所 | A kind of integrated circuit of closed assembly |
| CN103795272A (en) * | 2014-01-25 | 2014-05-14 | 嘉兴斯达半导体股份有限公司 | Three-phase rectifier bridge power module |
| CN104900617A (en) * | 2015-05-04 | 2015-09-09 | 嘉兴斯达半导体股份有限公司 | Internal connection structure of power semiconductor module |
| CN106783773A (en) * | 2016-12-13 | 2017-05-31 | 中航（重庆）微电子有限公司 | A kind of Non-insulation bi-tower type diode module |
| CN106816445A (en) * | 2017-01-22 | 2017-06-09 | 上海道之科技有限公司 | A kind of IGBT module |
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| Publication number | Publication date |
|---|---|
| CN102054826B (en) | 2013-01-09 |
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Effective date of registration: 20171222 Address after: Jiaxing City, Zhejiang province 314006 Nanhu District Branch Road No. 988 Patentee after: STARPOWER SEMICONDUCTOR Ltd. Address before: Sidalu in Nanhu District of Jiaxing city of Zhejiang Province, No. 18 314000 Patentee before: JIAXING STARPOWER MICROELECTRONICS Co.,Ltd. |
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Address after: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Star Semiconductor Co.,Ltd. Address before: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: STARPOWER SEMICONDUCTOR Ltd. |
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