CN104867888A - High-heat-dissipation SiC power module - Google Patents
High-heat-dissipation SiC power module Download PDFInfo
- Publication number
- CN104867888A CN104867888A CN201510220010.0A CN201510220010A CN104867888A CN 104867888 A CN104867888 A CN 104867888A CN 201510220010 A CN201510220010 A CN 201510220010A CN 104867888 A CN104867888 A CN 104867888A
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- China
- Prior art keywords
- copper
- solder
- sic
- welded
- ceramic substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a high-heat-dissipation SiC power module which comprises an SiC chip, a metal sheet, a copper-clad ceramic substrate, welding fluxes and a copper substrate, wherein the SiC chip is welded on the metal sheet by the welding flux; the metal sheet is welded on an upper surface copper layer of the copper-clad ceramic substrate by the welding flux; a lower surface copper layer of the copper-clad ceramic substrate is welded on the copper substrate by the welding flux; the metal sheet is a pure red copper sheet, a copper alloy sheet or one of other metal sheets with good conductivity, and has the characteristic of good wettability with the welding flux; the copper-clad ceramic substrate comprises the upper surface copper layer, a ceramic layer and the lower surface copper layer; the upper surface copper layer, the ceramic layer and the lower surface copper layer are integrally formed by sintering; and the area of the middle ceramic layer is greater than that of the upper surface copper layer and the lower surface copper layer. The power module has the characteristics that the power module is reasonable in structure, convenient to mount and use, easy and simple to operate and easy to realize, and can meet a heat-dissipation requirement of the SiC chip; and the reliability of the SiC chip power module is improved.
Description
Technical field
What the present invention relates to is a kind of power model of high-cooling property SiC chip, belongs to the manufacturing process field of SiC chip power module.
Background technology
Carborundum (SiC), as a kind of novel semiconductor material, compared with Si, it has many advantages in the application, and its potential advantage has: lower conducting resistance and conduction loss; Lower switching loss, faster switching speed; Higher dielectric constant, can bear higher withstand voltage; The more excellent capacity of heat transmission; Higher continuous operation temperature, more than 400 degree; More excellent impact resistance is with reliable; Higher current density, power density; Positive temperature coefficient is beneficial to parallel connection.The excellent performance that SiC has becomes the preferred material of semiconductor device of high frequency, high-power, high temperature resistant, Flouride-resistani acid phesphatase, can be widely used in the fields such as the monitoring of ground nuclear reactor, oil exploration, environmental monitoring and Aeronautics and Astronautics, radar, communication, powerful electronic commutator, polychromatic light information display system and optic integrated circuit.
SiC chip, as a kind of novel semiconductor material, has many advantages, but need to solve some technical barriers for the High-temperature Packaging of SiC power model, is popularized to make SiC device apply.Traditional power semiconductor package technology adopts lead or lead-free solder that die bottom surface is welded to cover on copper ceramic substrate DBC, chip upper surface and 5-20mil aluminum steel or gold thread are bonded together by wedge bonding, but this method lacks reliability under high-power, high temperature operating conditions, and does not possess enough robustnesses.The power model of SiC chip has higher working temperature, can up to 600 degree (the power model working temperature of Si chip is generally up to 175 DEG C), therefore it is higher to the cooling requirements of substrate, and the existing copper ceramic substrate DBC that covers is due to technical reason, the thickest 0.3mm that is generally of upper surface copper layer thickness, if therefore directly by SiC chips welding covering on copper ceramic substrate DBC, can not meet the heat radiation of SiC chip at all.
Summary of the invention
The object of the invention is to the deficiency overcoming prior art existence, and provide a kind of rational in infrastructure, easy to install, the cooling requirements of SiC chip can be met, improve the reliability of SiC chip power module, the power model of the high-cooling property SiC chip of easy realization easy and simple to handle.
The object of the invention is to have come by following technical solution, the power model of a kind of high-cooling property SiC, it comprises SiC chip, sheet metal, covers copper ceramic substrate, solder and copper base, described SiC chip is welded on sheet metal by solder, this sheet metal is then welded on by solder and covers in the upper surface layers of copper of copper ceramic substrate, described in cover copper ceramic substrate lower surface layers of copper be welded on copper base by solder solder.
Sheet metal of the present invention is the one in pure copper sheet, alcu alloy film or other sheet metal conducted electricity very well, and described sheet metal has the characteristic having good wettability with solder.
The described copper ceramic substrate that covers comprises upper surface layers of copper, ceramic layer, lower surface layers of copper, described upper surface layers of copper, forms one by sintering between ceramic layer and lower surface layers of copper, and the ceramic layer area of centre is greater than the layers of copper area of levels;
Described solder comprises weld tabs and soldering paste.
Between 1-3 mm, area need be greater than the SiC chip area be welded thereon to sheet thicknesses of the present invention.
The present invention is by welding the heat dispersion that piece of metal sheet improves SiC chip power module at SiC chip with covering between copper ceramic substrate (DBC); It has rational in infrastructure, easy to install, and reliability is strong, can meet the cooling requirements of SiC chip, improves the reliability of SiC chip power module, the features such as easy realization easy and simple to handle; Can be applicable to the welding procedure of the semi-conductor power module of yield production type.
Accompanying drawing explanation
Fig. 1 is the power model schematic diagram of SiC chip of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be described in detail: shown in Fig. 1, the power model of a kind of high-cooling property SiC of the present invention, it comprises SiC chip 9, sheet metal 7, covers copper ceramic substrate DBC, solder and copper base 1, described SiC chip 9 is welded on sheet metal 7 by solder 8, this sheet metal 7 be welded on by solder 6 cover copper ceramic substrate DBC upper surface layers of copper 5 on, described in cover copper ceramic substrate DBC lower surface layers of copper 3 be welded on copper base 1 by solder 2 solder.
Described sheet metal 7 is the one in pure copper sheet, alcu alloy film or other sheet metal conducted electricity very well, and described sheet metal has the characteristic having good wettability with solder.
The described copper ceramic substrate DBC that covers comprises upper surface layers of copper 5, ceramic layer 4, lower surface layers of copper 3, described upper surface layers of copper 5, forms one by sintering between ceramic layer 4 and lower surface layers of copper 3, and ceramic layer 4 area of centre is greater than the layers of copper area of levels;
Described solder comprises weld tabs and soldering paste.
Between 1-3 mm, area need be greater than the SiC chip area be welded thereon to described sheet metal 7 thickness.
Concrete manufacturing process is: be first welded on sheet metal 7 by SiC chip 9 by solder 8, and then sheet metal 7 is welded on by solder 6 covers in copper ceramic substrate DBC upper surface layers of copper 5, finally will cover copper ceramic substrate DBC lower surface layers of copper 3 and be welded on copper base 1 by solder 2 solder.
Claims (3)
1. the power model of a high-cooling property SiC, it comprises SiC chip, sheet metal, covers copper ceramic substrate (DBC), solder and copper base, it is characterized in that described SiC chip (9) is welded on sheet metal (7) by solder (8), this sheet metal (7) is then welded on is covered in the upper surface layers of copper (5) of copper ceramic substrate (DBC) by solder (6), described in cover copper ceramic substrate (DBC) lower surface layers of copper (3) be welded on copper base (1) by solder (2) solder.
2. the power model of high-cooling property SiC according to claim 1, it is characterized in that described sheet metal (7) is pure copper sheet, one in alcu alloy film or other sheet metal conducted electricity very well, and described sheet metal has the characteristic having good wettability with solder;
The described copper ceramic substrate (DBC) that covers comprises upper surface layers of copper, ceramic layer, lower surface layers of copper, described upper surface layers of copper, forms one by sintering between ceramic layer and lower surface layers of copper, and the ceramic layer area of centre is greater than the layers of copper area of levels;
Described solder comprises weld tabs and soldering paste.
3. the power model of high-cooling property SiC according to claim 1 and 2, is characterized in that described sheet thicknesses between 1-3 mm, and area need be greater than the SiC chip area be welded thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510220010.0A CN104867888A (en) | 2015-05-04 | 2015-05-04 | High-heat-dissipation SiC power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510220010.0A CN104867888A (en) | 2015-05-04 | 2015-05-04 | High-heat-dissipation SiC power module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104867888A true CN104867888A (en) | 2015-08-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510220010.0A Pending CN104867888A (en) | 2015-05-04 | 2015-05-04 | High-heat-dissipation SiC power module |
Country Status (1)
| Country | Link |
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| CN (1) | CN104867888A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107591377A (en) * | 2017-09-12 | 2018-01-16 | 华中科技大学 | More the DBC encapsulating structures and method for packing of a kind of power device |
| CN107634037A (en) * | 2017-03-02 | 2018-01-26 | 天津开发区天地信息技术有限公司 | High heat conduction package substrate |
| CN108428682A (en) * | 2018-04-13 | 2018-08-21 | 江西江铃集团新能源汽车有限公司 | A kind of power modules and preparation method thereof |
| CN111952259A (en) * | 2019-05-15 | 2020-11-17 | 株式会社电装 | Semiconductor device with a plurality of semiconductor chips |
| CN112885824A (en) * | 2021-01-19 | 2021-06-01 | 元山(济南)电子科技有限公司 | Silicon carbide power module, device and aging state identification method thereof |
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| CN101401197A (en) * | 2006-03-08 | 2009-04-01 | 株式会社东芝 | Electronic component module |
| US20140159225A1 (en) * | 2011-08-25 | 2014-06-12 | Nissan Motor Co., Ltd. | Semiconductor module |
| CN203670280U (en) * | 2013-12-27 | 2014-06-25 | 广东美的环境电器制造有限公司 | Fan blade and fan with fan blade |
| CN104113979A (en) * | 2014-02-13 | 2014-10-22 | 美的集团股份有限公司 | Aluminum-based circuit board and preparation method thereof, and full packaging electronic component |
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2015
- 2015-05-04 CN CN201510220010.0A patent/CN104867888A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101401197A (en) * | 2006-03-08 | 2009-04-01 | 株式会社东芝 | Electronic component module |
| US20140159225A1 (en) * | 2011-08-25 | 2014-06-12 | Nissan Motor Co., Ltd. | Semiconductor module |
| CN203670280U (en) * | 2013-12-27 | 2014-06-25 | 广东美的环境电器制造有限公司 | Fan blade and fan with fan blade |
| CN104113979A (en) * | 2014-02-13 | 2014-10-22 | 美的集团股份有限公司 | Aluminum-based circuit board and preparation method thereof, and full packaging electronic component |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107634037A (en) * | 2017-03-02 | 2018-01-26 | 天津开发区天地信息技术有限公司 | High heat conduction package substrate |
| CN107591377A (en) * | 2017-09-12 | 2018-01-16 | 华中科技大学 | More the DBC encapsulating structures and method for packing of a kind of power device |
| CN107591377B (en) * | 2017-09-12 | 2019-09-06 | 华中科技大学 | A kind of more DBC encapsulating structures and packaging method of power device |
| CN108428682A (en) * | 2018-04-13 | 2018-08-21 | 江西江铃集团新能源汽车有限公司 | A kind of power modules and preparation method thereof |
| CN111952259A (en) * | 2019-05-15 | 2020-11-17 | 株式会社电装 | Semiconductor device with a plurality of semiconductor chips |
| CN112885824A (en) * | 2021-01-19 | 2021-06-01 | 元山(济南)电子科技有限公司 | Silicon carbide power module, device and aging state identification method thereof |
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Application publication date: 20150826 |