CN216563091U - Double-sided heat dissipation power module - Google Patents
Double-sided heat dissipation power module Download PDFInfo
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- CN216563091U CN216563091U CN202122295581.4U CN202122295581U CN216563091U CN 216563091 U CN216563091 U CN 216563091U CN 202122295581 U CN202122295581 U CN 202122295581U CN 216563091 U CN216563091 U CN 216563091U
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- plate
- dbc
- heat dissipation
- silicon carbide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The utility model relates to the technical field of electronic equipment, in particular to a double-sided heat dissipation power module which comprises a silicon carbide chip, wherein the upper surface of the silicon carbide chip is directly connected with a first connecting piece, the upper surface of the first connecting piece is directly connected with an upper DBC (direct bonded copper) plate, the lower surface of the silicon carbide chip is connected with a lower DBC plate, and a first welding flux layer is arranged between the silicon carbide chip and the lower DBC plate.
Description
Technical Field
The utility model relates to the technical field of electronic equipment, in particular to a double-sided heat dissipation power module.
Background
Due to the advantages of high temperature, high temperature and high frequency of silicon carbide (SiC) devices, the silicon carbide (SiC) device is widely applied to the fields of national defense and military industry, electric automobiles, new energy sources and the like. In order to fully utilize the advantages of SiC devices, the package structure of the double-sided heat dissipation module is popular because it can be cooled on both sides to improve the heat dissipation performance of the module.
However, for the double-sided heat dissipation structure, due to the mismatch of the thermal expansion coefficients of the materials and the fixed structure at the two ends of the double-sided cooling package, the interface of the solder layer of the components including the chip and the like in the connection module generates larger thermal stress, which is even larger than the thermal stress borne by the solder layer of the traditional single-sided welding module, and when the solder layer periodically bears larger stress during the service period of the SiC device, the situations of delamination or fracture of the solder layer and the like may be generated, so that the thermal resistance of the module is increased, and further, the operation reliability of the module is influenced and even the module is burnt. For a conventional double-sided heat dissipation package structure, there are three solder layers inside the package structure, including: the reliability problem can exist in three positions, namely a solder layer between the SiC chip and the lower copper clad ceramic plate (DBC), a solder layer between the SiC chip and the buffer layer above the SiC chip, and a solder layer between the buffer layer and the upper DBC.
The utility model patent CN111903049A discloses a power module comprising: a first substrate on one surface of which a plurality of metal plates are formed; a second substrate spaced apart from the first substrate, a plurality of metal plates being formed on a surface of the second substrate opposite to the plurality of metal plates of the first substrate; a plurality of power elements disposed between the first substrate and the second substrate; a first electrode formed on a first surface of each of the plurality of power elements; and a second electrode formed on a second surface of each of the plurality of power elements, the plurality of power elements including: a first power element, the first electrode being bonded to the plurality of metal plates of the second substrate; and a second power element, the first electrode being bonded to the plurality of metal plates of the first substrate. Although the power module adopts a double-sided heat dissipation packaging structure and improves heat dissipation performance, the power module has the reliability problem caused by more solder layers.
Chips which can be purchased on the market comprise single-sided weldable chips and double-sided weldable chips, one side of each single-sided weldable chip is a weldable layer, and the surface of the other side of each single-sided weldable chip is plated with an aluminum layer, so that the chips need to be processed for manufacturing double-sided heat dissipation power modules, the aluminum layers are removed and plated with the weldable layers, the removal difficulty of the aluminum layers is high, and great difficulty is caused to the double-sided heat dissipation power modules; the double-sided weldable chip is small in quantity, large in purchasing difficulty and high in purchasing cost.
Disclosure of Invention
The purpose of the utility model is: the defects in the prior art are overcome, and the double-sided heat dissipation power module is provided.
In order to solve the technical problems, the technical scheme adopted by the utility model is as follows:
the utility model provides a two-sided heat dissipation power module, includes DBC board, lower DBC board and is located the carborundum chip between the two, carborundum chip is full-control type carborundum chip, the upper surface direct connection of carborundum chip has connection piece one, a connection piece upper surface is direct to be connected with last DBC board, go up the DBC board and pass through anchor clamps with lower DBC board and connect, anchor clamps include punch holder and lower plate, the punch holder is connected with the upper surface of last DBC board, the lower surface of lower plate and lower DBC board is connected, be connected through the bolt pair between punch holder and the lower plate.
Furthermore, a lower DBC plate is connected to the lower surface of the silicon carbide chip, and a first welding flux layer is arranged between the silicon carbide chip and the lower DBC plate.
Furthermore, the lower surface of the upper DBC plate is directly connected with a second connecting sheet.
Furthermore, the lower surface of the second connecting sheet is connected with a lower DBC plate, and a second welding flux layer is arranged between the second connecting sheet and the lower DBC plate.
Further, the upper DBC plate and the lower DBC plate are copper-clad ceramic plates, each copper-clad ceramic plate comprises an upper copper layer, a middle insulating layer and a lower copper layer, and the middle insulating layer is made of one of aluminum nitride, aluminum oxide and silicon nitride.
Furthermore, the sum of the thickness of the second connecting sheet and the thickness of the second solder layer is equal to the sum of the thickness of the first connecting sheet, the thickness of the silicon carbide chip and the thickness of the first solder layer.
Furthermore, a grid electrode of the silicon carbide chip is connected with a grid electrode bonding lead, and the other end of the grid electrode bonding lead is connected with the upper copper layer of the lower DBC plate.
Further, a source electrode or an emitter electrode of the silicon carbide chip is connected with a kelvin electrode bonding lead, and the other end of the kelvin electrode bonding lead is connected with the upper copper layer of the lower DBC plate.
Furthermore, the first connecting sheet is a molybdenum sheet, and the second connecting sheet is a copper sheet.
Furthermore, an epoxy resin layer is filled between the lower surface of the upper clamping plate and the upper surface of the lower clamping plate, and the epoxy resin layer respectively coats the lower surface and the side surface of the upper clamping plate, and the upper surface and the side surface of the lower clamping plate.
The technical scheme adopted by the utility model has the beneficial effects that:
1. the utility model can directly use a single-sided weldable chip for manufacturing, saves the manufacturing cost of the double-sided heat dissipation power module, reduces the purchasing cost and difficulty, reduces a chip processing procedure, and saves the manufacturing time and cost of the module.
2. The utility model reduces the probability of the power module having problems in the operation process by reducing the number of the solder connection layers in the module, improves the reliability of the double-sided heat dissipation module, and prolongs the service life of the module.
3. The utility model does not have a solder connecting layer above the chip inside the module, so that even if the solder layer is broken or layered, the thermal resistance above the chip is not increased, the consequences caused by problems are reduced, and the service life of the module is prolonged.
4. According to the utility model, the upper copper-clad ceramic plate and the lower copper-clad ceramic plate are arranged, so that double-sided heat dissipation is realized, the heat dissipation path of the chip is increased, the thermal resistance of the module is reduced, the heat dissipation is accelerated, and the damage probability caused by overhigh junction temperature of the chip is reduced.
5. The utility model works under the same working condition, has longer service life and more reliability, and also reduces the time and economic cost caused by the failure of the device.
6. The grid leads out a Kelvin electrode on the lower DBC through a bonding lead, and the Kelvin electrode and an external circuit jointly form a driving loop, so that decoupling of the power loop and the driving loop is realized, influence of parasitic inductance of the main loop on the driving loop is reduced, and performance of the module is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise. Wherein
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of a prior art structure;
FIG. 3 is an oblique view of the present invention;
FIG. 4 is an oblique view of the prior art;
FIG. 5 is a schematic view of the thermal stress distribution of the solder layer of the present invention;
FIG. 6 is a schematic diagram illustrating a thermal stress distribution of a solder layer in the prior art;
FIG. 7 is a schematic of the temperature profile of the present invention;
fig. 8 is a schematic diagram of a temperature distribution of the prior art.
1-upper DBC plate 2-connecting plate one 3-connecting plate two 4-silicon carbide chip 5-solder layer 6-lower DBC plate 7-power terminal 8-grid bonding lead 9-epoxy resin 10-lower clamping plate 11-upper clamping plate 12-bolt 13-nut 14-Kelvin electrode bonding lead.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention. The present invention is described in detail by using schematic structural diagrams and the like, which are only examples and should not limit the protection scope of the present invention. In addition, the actual fabrication process should include three-dimensional space of length, width and depth.
Referring to fig. 1-8, a double-sided heat dissipation power module includes an upper DBC plate, a lower DBC plate and a silicon carbide chip therebetween, the silicon carbide chip is a full-control silicon carbide chip which can be an MOSFET, an IGBT and the like, the upper surface of the silicon carbide chip is directly connected with a first connecting sheet, the upper surface of the first connecting sheet is directly connected with an upper DBC plate, the first connecting sheet is a molybdenum sheet, the upper DBC plate and the lower DBC plate are connected through a clamp, the clamp comprises an upper clamping plate and a lower clamping plate, the upper clamping plate is connected with the upper surface of the upper DBC plate, the lower clamping plate is connected with the lower surface of the lower DBC plate, the upper clamping plate and the lower clamping plate are connected through a bolt pair, the bolt pair comprises a bolt and a nut, and the clamp can apply pressure between the upper DBC plate and the lower DBC plate, so that the electrical connection among the upper DBC plate, the molybdenum sheet and the silicon carbide sheet is realized. And an epoxy resin layer is filled between the lower surface of the upper clamping plate and the upper surface of the lower clamping plate, and the epoxy resin layer respectively coats the lower surface and the side surface of the upper clamping plate, the upper surface and the side surface of the lower clamping plate so as to realize the insulation and protection effects on elements used by the power module, including the upper clamping plate, the lower clamping plate and the chip.
The utility model reduces the working procedure of chip processing in the manufacturing of the double-sided heat dissipation power module, reduces the production time, and reduces the purchasing difficulty, the manufacturing cost and the manufacturing difficulty.
Referring to fig. 1 and 3, a lower DBC plate is connected to a lower surface of the silicon carbide chip, and a first solder layer is disposed between the silicon carbide chip and the lower DBC plate, where a solder of the first solder layer may be a conventional lead-containing solder, a lead-free solder, or a sintered nano-silver material.
Referring to fig. 1 and 3, the lower surface of the upper DBC board is directly connected with a second connecting sheet, and the second connecting sheet is a copper sheet.
Referring to fig. 1 and 3, a lower DBC board is connected to a lower surface of the second connecting sheet, a second solder layer is disposed between the second connecting sheet and the lower DBC board, and a solder of the second solder layer may be a conventional lead-containing solder, a lead-free solder or a sintered nano silver material. The utility model only has a solder layer below the connecting sheet
Referring to fig. 1 and 3, the upper DBC plate and the lower DBC plate are copper-clad ceramic plates including an upper copper layer, an intermediate insulating layer, and a lower copper layer, and the intermediate insulating layer is made of one of aluminum nitride, aluminum oxide, and silicon nitride. The upper copper layer is patterned, so that the electrodes of the chip can be conveniently led out, and the connection of a subsequent circuit is convenient. Meanwhile, when the module is installed, the upper DBC plate and the lower DBC plate are connected with the radiator, so that the radiating path is increased, the radiating area is increased, and the performance of the module is improved.
The silicon carbide chip and the molybdenum chip are connected in a pressure connection mode to realize direct connection of the solderless layer, the DBC, the copper sheet and the molybdenum chip are also connected in a pressure connection mode to realize direct connection of the solderless layer, compared with the prior art, the number of the soldering layers is less, the probability of fracture or delamination of the soldering layers is lower, the soldering layer is arranged on only one side of the silicon carbide chip, even if the soldering layer on the side is fractured or delaminated, the thermal resistance of only one side is increased, compared with the prior art, the phenomenon that the soldering layers are fractured or delaminated is caused, the silicon carbide chip has smaller consequences and higher reliability.
Referring to fig. 1 and 3, the sum of the thickness of the second connecting sheet and the thickness of the second solder layer is equal to the sum of the thickness of the first connecting sheet, the thickness of the silicon carbide chip and the thickness of the first solder layer.
Referring to fig. 1 and 3, a gate of the silicon carbide chip is connected to a gate bonding wire, and the other end of the gate bonding wire is connected to an upper copper layer of the lower DBC plate. When the silicon carbide chip is an MOSFET, the source electrode of the silicon carbide chip is connected with a Kelvin source electrode bonding lead, and the other end of the Kelvin electrode bonding lead is connected with the upper copper layer of the lower DBC plate; when the silicon carbide chip is an IGBT, an emitter electrode of the silicon carbide chip is connected with a Kelvin emitter electrode bonding lead, and the other end of the Kelvin electrode bonding lead is connected with the upper copper layer of the lower DBC plate. The power module and the external circuit jointly form a driving loop, decoupling of the power loop and the driving loop is achieved, and performance of the module is improved.
When the silicon carbide chip is an MOSFET, the drain electrode of the MOSFET chip is connected with the lower DBC plate through the solder layer; the upper electrode, namely the source electrode, is electrically connected with the solder layer through the molybdenum sheet, the upper DBC plate and the copper sheet.
Referring to fig. 6, the three solder layers of the heat dissipation module of the prior art all bear thermal stress, and the solder layer above the silicon carbide chip has larger stress, while the silicon carbide chip of the utility model in fig. 5 only has the solder layer below and the solder layer above the silicon carbide chip is connected with the upper DBC board by pressure without the solder layer, so that only this solder layer may have a problem of fracture or delamination due to bearing stress, the probability of the heat dissipation module having problems is greatly reduced, and even if the solder layer fracture or delamination problem has a lower influence on the module life.
Referring to fig. 7 and 8, the thermal resistances at the two sides of the chip of the utility model in fig. 7 are smaller than the thermal resistances at the two sides of the chip of the prior art in fig. 8, and the small thermal resistances at the two sides of the chip can reduce the junction temperature, prolong the service life of the module, and improve the reliability of the module.
In summary, under the same conditions, the present invention has a longer service life and higher reliability compared to the prior art.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations can be made by the worker in the light of the above teachings without departing from the spirit of the utility model. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (10)
1. The utility model provides a two-sided heat dissipation power module, includes DBC board, lower DBC board and is located the carborundum chip between the two, its characterized in that: the silicon carbide chip is a full-control silicon carbide chip, the upper surface of the silicon carbide chip is directly connected with a first connecting piece, the upper surface of the first connecting piece is directly connected with an upper DBC plate, the upper DBC plate and a lower DBC plate are connected through a clamp, the clamp comprises an upper clamp plate and a lower clamp plate, the upper clamp plate is connected with the upper surface of the upper DBC plate, the lower clamp plate is connected with the lower surface of the lower DBC plate, and the upper clamp plate is connected with the lower clamp plate through a bolt pair.
2. The double-sided heat dissipation power module of claim 1, wherein: the lower surface of the silicon carbide chip is connected with the lower DBC plate, and a first welding flux layer is arranged between the silicon carbide chip and the lower DBC plate.
3. The double-sided heat dissipation power module of claim 2, wherein: and the lower surface of the upper DBC plate is directly connected with a second connecting sheet.
4. The double-sided heat dissipation power module of claim 3, wherein: the lower surface of the second connecting sheet is connected with a lower DBC plate, and a second welding flux layer is arranged between the second connecting sheet and the lower DBC plate.
5. The double-sided heat dissipation power module of claim 4, wherein: the upper DBC plate and the lower DBC plate are copper-clad ceramic plates, each copper-clad ceramic plate comprises an upper copper layer, an intermediate insulating layer and a lower copper layer, and the intermediate insulating layer is made of one of aluminum nitride, aluminum oxide and silicon nitride.
6. The double-sided heat dissipation power module of claim 5, wherein: the sum of the thickness of the second connecting sheet and the thickness of the second solder layer is equal to the sum of the thickness of the first connecting sheet, the thickness of the silicon carbide chip and the thickness of the first solder layer.
7. The double-sided heat dissipation power module of claim 6, wherein: and the grid of the silicon carbide chip is connected with a grid bonding lead, and the other end of the grid bonding lead is connected with the upper copper layer of the lower DBC plate.
8. The double-sided heat dissipation power module of claim 7, wherein: and the source electrode or the emitting electrode of the silicon carbide chip is connected with a Kelvin electrode bonding lead, and the other end of the Kelvin electrode bonding lead is connected with the upper copper layer of the lower DBC plate.
9. The double-sided heat dissipation power module of claim 8, wherein: the first connecting sheet is a molybdenum sheet, and the second connecting sheet is a copper sheet.
10. The double-sided heat dissipation power module of claim 1, wherein: and an epoxy resin layer is filled between the lower surface of the upper clamping plate and the upper surface of the lower clamping plate, and the epoxy resin layer respectively coats the lower surface and the side surface of the upper clamping plate, and the upper surface and the side surface of the lower clamping plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122295581.4U CN216563091U (en) | 2021-09-23 | 2021-09-23 | Double-sided heat dissipation power module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122295581.4U CN216563091U (en) | 2021-09-23 | 2021-09-23 | Double-sided heat dissipation power module |
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| CN216563091U true CN216563091U (en) | 2022-05-17 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115050703A (en) * | 2022-08-16 | 2022-09-13 | 杭州飞仕得科技有限公司 | Power device packaging structure and power converter |
| CN115722749A (en) * | 2022-11-16 | 2023-03-03 | 深圳市森国科科技股份有限公司 | Local induction heating diffusion welding method and power module packaging method |
-
2021
- 2021-09-23 CN CN202122295581.4U patent/CN216563091U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115050703A (en) * | 2022-08-16 | 2022-09-13 | 杭州飞仕得科技有限公司 | Power device packaging structure and power converter |
| CN115050703B (en) * | 2022-08-16 | 2022-10-25 | 杭州飞仕得科技有限公司 | Power device packaging structure and power converter |
| CN115722749A (en) * | 2022-11-16 | 2023-03-03 | 深圳市森国科科技股份有限公司 | Local induction heating diffusion welding method and power module packaging method |
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