CN201146183Y - Semiconductor power module - Google Patents

Semiconductor power module Download PDF

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Publication number
CN201146183Y
CN201146183Y CNU2007201309643U CN200720130964U CN201146183Y CN 201146183 Y CN201146183 Y CN 201146183Y CN U2007201309643 U CNU2007201309643 U CN U2007201309643U CN 200720130964 U CN200720130964 U CN 200720130964U CN 201146183 Y CN201146183 Y CN 201146183Y
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CN
China
Prior art keywords
power module
copper
base
semi
semiconductor chip
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Expired - Fee Related
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CNU2007201309643U
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Chinese (zh)
Inventor
王晓宝
赵善麒
刘利峰
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Jiangsu Macmic Science & Technology Co Ltd
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Jiangsu Macmic Science & Technology Co Ltd
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Priority to CNU2007201309643U priority Critical patent/CN201146183Y/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The utility model relates to a semiconductor power module and a radiating method thereof, which belongs to the field of the semiconductor module manufacturing. The semiconductor power module includes a soleplate, a ceramic substrate coated with metal, a semiconductor chip, a conducting connection piece, an electrode and a shell. The ceramic substrate coated with metal is connected with the soleplate. The semiconductor chip is connected with the ceramic substrate coated with metal or the soleplate. The conducting connection piece is connected with the semiconductor chip and the ceramic substrate coated with metal. The electrode is connected with the conducting connection piece or the ceramic substrate coated with metal. The shell is connected with the soleplate. The soleplate consists of a copper substrate and an aluminum substrate which is compounded at the lower part of the copper substrate in solid phase, and the thickness of the aluminum substrate is more than 0.5 times larger than the thickness of the copper substrate. The soleplate of the semiconductor power module is the combination of copper and aluminum, which can improve working capability of semiconductor modules. The semiconductor power module is characterized by material saving, small volume, light weight and low cost, which has high value in promotion.

Description

Semi-conductor power module
Technical field
The utility model relates to a kind of semi-conductor power module and heat dissipating method thereof, belongs to semiconductor module and makes the field.
Background technology
Semi-conductor power module is widely used in fields such as communication, industry, medical treatment, household electrical appliance, illumination, communications and transportation, semiconductor production equipment, military affairs and aviation.Main application product classification has various frequency converters, chopper and various Switching Power Supply.As thick film ceramic sheet welded type semi-conductor power module, cover cermet substrate welded type semi-conductor power module, nonisulated formula welding semi-conductor power module, compression joint type semi-conductor power module etc.; be standard profile size and non-standard overall dimension semiconductor module product; these semiconductor module products all have a base plate; this base plate promptly can be used as the carrier of fixing each semiconductor chip or covering cermet substrate, electrode and perfusion resilient protection glue and epoxy resin etc., and can be used as an electric conductor of semi-conductor power module sometimes again.For ease of the connection of semiconductor chip and electrode, the base of semiconductor module all adopts copper soleplate at present, to utilize the solderability of copper material.As everyone knows, copper material is compared with aluminium material, has the advantages that hot melt is big, specific heat is little, heat absorption is fast.Semi-conductor power module in the course of the work, the heat that semiconductor chip produces can absorb rapidly by copper soleplate, but that copper soleplate and aluminium are compared specific heat is little, and thermal runaway speed is slower, can not in time the heat in the module be shed, dispel the heat so module need be installed on the radiator.But semiconductor module is installed in the space that needs on the radiator between heat-conducting silicone grease packing module and the radiator, has not only increased thermal resistance, and has reduced heat-sinking capability.Therefore under condition, can't further increase the working capacity of semiconductor module with volume.The base plate thickness of semi-conductor power module is that increase with the semiconductor module base areas thickens on the other hand, increase base plate thickness and mainly solve thermal stress deformation and installation strength requirement in the welding process, therefore the semiconductor module production quantity is huge, need a large amount of copper materials, and the copper material price rises steadily, and makes the semiconductor module block cost also constantly increase.
Summary of the invention
The purpose of this utility model provides a kind of heat absorption and rapid heat dissipation, and volume is little, can increase the semiconductor module working capacity, reduces the semi-conductor power module and the heat dissipating method thereof of manufacturing cost.
The utility model is that the technical scheme that achieves the above object is: a kind of semi-conductor power module, comprise base plate, cover the cermet substrate, semiconductor chip, conducting connecting part, electrode and housing, covering the cermet substrate is connected on the base plate, semiconductor chip is connected and covers on cermet substrate or the base plate, conducting connecting part connects semiconductor chip and covers the cermet substrate, electrode and conducting connecting part or with cover the cermet substrate and be connected, housing is connected on the base plate, it is characterized in that: described base plate is made of the aluminum base layer that base copper and solid phase are compounded in the base copper bottom, and aluminum base layer thickness is more than 0.5 times of base copper thickness.
The copper-aluminum composite board that the aluminum base layer that the base plate of the utility model semi-conductor power module adopts base copper and solid phase to be compounded in the base copper bottom constitutes, can collect copper material and the aluminium advantage aspect heat exchange, because the conductive coefficient of copper is 1386KJ/ (M.H.K), specific heat is 93 cards/(kilogram * ℃), and the conductive coefficient of aluminium is 735KJ/ (M.H.K), specific heat is 217 cards/(kilogram * ℃), the utility model not only can utilize the solderability conduct and semiconductor chip and the welding carrier that covers the cermet substrate of base copper, and the conductive coefficient of copper is 1.9 times of aluminium, so heat of the base copper on base plate top energy transient absorption semiconductor chip, base copper passes through the aluminum base layer of the copper aluminium lamination of combination between two metallic atoms with the heat transferred bottom, and copper aluminium interface does not have thermal resistance to increase in the transmittance process of heat, and the specific heat of aluminium is 2.3 times of copper, aluminum base layer can be distributed the heat that base copper absorbed rapidly, play the quick heat radiating effect, reduce the thermal stress of semiconductor chip in long-term work effectively, improved the semiconductor chip functional reliability.The utility model adopts copper aluminium solid phase composite bottom board, and because of the thermal resistance between semiconductor chip and the radiator is littler, radiating efficiency improves greatly, so in identical semiconductor module working capacity, can reduce the semiconductor module volume.And its weight of copper of same volume is 3 times of aluminium, also significantly reduces the weight of module, reduces cost.Can be widely used in thick film ceramic sheet welded type semi-conductor power module, DBC substrate welded type semi-conductor power module, nonisulated formula welding semi-conductor power module, compression joint type semi-conductor power module etc.
Description of drawings
Below in conjunction with accompanying drawing embodiment of the present utility model is described in further detail.
Fig. 1 is the semi-conductor power module structural representation with diode chip for backlight unit.
Fig. 2 is the semi-conductor power module structural representation with insulated gate bipolar transistor (IGBT).
Fig. 3 is the plan structure schematic diagram that Fig. 2 removes housing.
Fig. 4 is the semi-conductor power module structural representation of welded type thyristor chip.
Fig. 5 is the semi-conductor power module schematic diagram with fast recovery diode (FRD) chip.
Fig. 6 is the plan structure schematic diagram of Fig. 5.
Wherein: 1-base plate, 2-housing, the 3-semiconductor chip, 4-conducting connecting part, 5-cover the cermet substrate, the 6-electrode.
Embodiment
See shown in Fig. 1～6, semi-conductor power module of the present utility model comprises base plate 1, covers cermet substrate 5, semiconductor chip 3, conducting connecting part 4, electrode 6 and housing 2, covering cermet substrate 5 is connected on the base plate 1, semiconductor chip 3 is connected and covers on cermet substrate 5 or the base plate 1, and electrode 6 can be connected with semiconductor chip 3 by conducting connecting part 4 shown in Fig. 2,3.Can be as Fig. 5, shown in 6, electrode 6 by conducting connecting part 4 with cover cermet substrate 5 and be connected, housing 2 is connected on the base plate 1, housing 2 can be bonded on the base plate 1, or housing 2 directly is connected on the base plate 1, this base plate 1 is made of the aluminum base layer 12 that base copper 11 and solid phase are compounded in base copper 11 bottoms, base copper 11 of the present utility model and aluminum base layer 12 are to suppress under certain heating-up temperature and firing rate, copper, aluminum metal makes atom activate under heating condition and diffusion, and under external force, the lattice of solid metallic misplaces and shifts the generation plastic deformation, make two metal bond interfaces closely contact joint, realize that copper aluminium two metal solid phases are compound, therefore copper aluminium joint interface does not have the increase of thermal resistance in diabatic process, reaches the quick heat absorption and the purpose of heat radiation rapidly.Under the semi-conductor power module of equal volume, can improve the working capacity of semi-conductor power module.The utility model aluminum base layer thickness is more than 0.5 times of base copper thickness, general this aluminum base layer thickness is 1～100 times of base copper thickness, best aluminum base layer thickness is 5～15 times of base copper thickness, aluminum base layer 12 on this base plate 1 can be the plate-like layers that solid phase is compounded in base copper 11 bottoms, or aluminum base layer 12 is to be compounded in the plate-like layers of base copper 11 bottoms and to be extended downwards and three above fins having the space each other constitute along plate-like layers by solid phase; Can also be three above fins formations that aluminum base layer 12 solid phases are compounded in base copper 11 bottoms and extend downwards.Base copper 11 fast Absorption of the base plate 1 of semi-conductor power module of the present utility model by the bottom are dispelled the heat rapidly by the aluminum base layer 12 that solid phase is compounded in base copper 11 bottoms again, improve radiating efficiency.
Fig. 1 is the structure with semi-conductor power module of diode semiconductor chip, semiconductor chip 3 adopts diode chip for backlight unit, available braze will have up and down, and the semiconductor chip 3 of molybdenum sheet is welded on the fixed position of base plate 1, again with electrode 6 and conducting connecting part 4 welding, and conducting connecting part 4 adopts cross structure, by cross structure semiconductor chip 3 is connected with electrode 6, its base plate 1 is made of the aluminum base layer 12 that base copper 11 and solid phase are compounded in base copper 11 bottoms, base copper thickness is at 0.4mm, and aluminum base layer thickness is at 2.8mm; Or base copper thickness is at 0.4mm, and aluminum base layer thickness is at 40mm; Can also be base copper thickness at 10mm, and aluminum base layer thickness can be set thickness as requested at 5mm, housing 2 is connected on the base plate 1, uses silicone rubber seal between base plate 1 and the housing 2, the perfusion soft elastic glue is protected semiconductor chip.This structure equally also can be used for thyristor chip and is welded on semi-conductor power module on the base plate 1.
Fig. 2; the 3rd, have the structure of the semi-conductor power module of insulated gate bipolar transistor (IGBT); semiconductor chip 3 adopts the insulated gate bipolar transistor chip; semiconductor chip 3 is welded on and covers on the cermet substrate 5; this covers cermet substrate 5 and adopts DBC to cover the cermet substrate; cover the cermet substrate as Cu-Al2O3 (AlN)-Cu Direct Bonding; conducting connecting part 4 is the crude aluminum silk; by crude aluminum silk bonding techniques the upper surface of semiconductor chip 3 being covered cermet substrate surface electrode district with DBC is connected; and electrode 6 is that the crude aluminum silk covers the cermet substrate with DBC and is connected by conducting connecting part 4; DBC covers base copper 11 welding on cermet substrate and the base plate 1; the bottom of base copper 11 has the compound aluminum base layer of solid phase 12; base copper thickness is at 1mm; aluminum base layer thickness is at 10mm; or base copper thickness is identical with aluminum base layer thickness; be 10mm; housing 2 is connected on the base plate 1; use silicone rubber seal between base plate 1 and the housing 2; the perfusion soft elastic glue is protected semiconductor chip 3; the heat that is produced in semiconductor chip 3 work is derived by base copper on the base plate 1 11, and sheds rapidly by aluminum base layer 12.The semi-conductor power module that this type of semi-conductor power module is also formed just like MOSFET chip etc.
See shown in Figure 4; it is the semi-conductor power module structure of welded type thyristor semiconductor chip; semiconductor chip 3 adopts thyristor chip; semiconductor chip 3 is welded on and covers on the cermet substrate 5; conducting connecting part 4 adopts cross structure; one end of cross structure is by last molybdenum sheet and semiconductor chip 3 welding; the cross structure other end with cover cermet substrate 5 welding; with the upper surface of semiconductor chip 3 with cover cermet substrate 5 surface electrical polar regions and be connected; 6 at electrode is connected with the electrode district that covers cermet substrate 5; cover on the base copper 11 that cermet substrate 5 is welded on base plate 1; and base copper 11 solid phases are compounded with aluminum base layer 12; base copper thickness is at 5mm, and aluminum base layer thickness is at 15mm, or base copper thickness is at 5mm; and aluminum base layer thickness is at 25mm; housing 2 is fixed on the base plate 1, uses silicone rubber seal between base plate 1 and the housing 2, and the perfusion soft elastic glue is protected semiconductor chip 3.Be applicable to that equally also the diode semiconductor chip directly is welded on the structure of covering cermet substrate 5.
Fig. 5; shown in 6; it is the semi-conductor power module structure of fast recovery diode (FRD) chip; semiconductor chip 3 adopts fast recovery diode (FRD) chip; semiconductor chip 3 is welded on and covers on the cermet substrate; this covers cermet substrate 5 and also adopts DBC to cover the cermet substrate; conducting connecting part 4 is an aluminium wire; by the aluminium wire bonding techniques with the upper surface of semiconductor chip 3 with cover cermet substrate 5 surface electrical polar regions and be connected; and electrode 6 is aluminium wire by conducting connecting part 4 and covers 5 welding of cermet substrate; cover base copper 11 welding on cermet substrate 5 and the base plate 1; the bottom of base copper 11 has the compound aluminum base layer of solid phase 12; base copper thickness is at 1mm; and aluminum base layer thickness is at 15mm; when aluminum base layer 12 adopts fin structure; aluminum base layer thickness is at 50mm; when aluminum base layer thickness at 100mm; can reach best radiating effect; housing 2 is connected on the base plate 1; use silicone rubber seal between base plate 1 and the housing 2; the perfusion soft elastic glue is protected semiconductor chip 3; the heat that is produced in semiconductor chip 3 work sucks fast by base copper 11 on the base plate 1, and sheds rapidly by aluminum base layer 12.The semi-conductor power module that this type of semi-conductor power module is also formed just like MOSFET semiconductor chip etc., the semiconductor module that POWER IC, CPU, digital integrated circuit are formed.
Semi-conductor power module of the present utility model is because compound integrated with copper aluminium, can reach efficient, material-saving, volume is little, in light weight, cost is low, have high promotional value.

Claims (6)

1, a kind of semi-conductor power module, comprise base plate (1), cover cermet substrate (5), semiconductor chip (3), conducting connecting part (4), electrode (6) and housing (2), covering cermet substrate (5) is connected on the base plate (1), semiconductor chip (3) is connected and covers on cermet substrate (5) or the base plate (1), conducting connecting part (4) connects semiconductor chip (3) and covers cermet substrate (5), electrode (6) and conducting connecting part (4) or with cover cermet substrate (5) and be connected, housing (2) is connected on the base plate (1), it is characterized in that: described base plate (1) is made of the aluminum base layer (12) that base copper (11) and solid phase are compounded in base copper (11) bottom, and aluminum base layer thickness is more than 0.5 times of base copper thickness.
2, semi-conductor power module according to claim 1 is characterized in that: described aluminum base layer thickness is 1～100 times of base copper thickness.
3, semi-conductor power module according to claim 2 is characterized in that: described aluminum base layer thickness is 5～15 times of base copper thickness.
4, semi-conductor power module according to claim 1 is characterized in that: described aluminum base layer (12) is the plate-like layers that solid phase is compounded in base copper (11) bottom.
5, semi-conductor power module according to claim 4 is characterized in that: described aluminum base layer (12) is to be compounded in the plate-like layers of base copper (11) bottom and to be extended and have each other three above fins formations in space along plate-like layers downwards by solid phase.
6, semi-conductor power module according to claim 1 is characterized in that: described aluminum base layer (12) is that solid phase is compounded in base copper (11) bottom and the above fins formation of downward three of extending at interval.
CNU2007201309643U 2007-12-14 2007-12-14 Semiconductor power module Expired - Fee Related CN201146183Y (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101179055B (en) * 2007-12-14 2010-10-06 江苏宏微科技有限公司 Semi-conductor power module and dissipating heat method thereof
CN103426861A (en) * 2012-05-15 2013-12-04 英飞凌科技股份有限公司 Reliable area joints for power semiconductors
CN103779305A (en) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 Metal connecting piece and power semiconductor module
CN104282677A (en) * 2014-11-05 2015-01-14 成都晶川电力技术有限公司 Fast recovery diode module
CN106783773A (en) * 2016-12-13 2017-05-31 中航（重庆）微电子有限公司 A kind of Non-insulation bi-tower type diode module

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101179055B (en) * 2007-12-14 2010-10-06 江苏宏微科技有限公司 Semi-conductor power module and dissipating heat method thereof
CN103426861A (en) * 2012-05-15 2013-12-04 英飞凌科技股份有限公司 Reliable area joints for power semiconductors
CN103426861B (en) * 2012-05-15 2016-04-20 英飞凌科技股份有限公司 The reliable area fastener of power semiconductor
CN103779305A (en) * 2014-01-24 2014-05-07 嘉兴斯达微电子有限公司 Metal connecting piece and power semiconductor module
CN104282677A (en) * 2014-11-05 2015-01-14 成都晶川电力技术有限公司 Fast recovery diode module
CN104282677B (en) * 2014-11-05 2017-02-15 成都晶川电力技术有限公司 Fast recovery diode module
CN106783773A (en) * 2016-12-13 2017-05-31 中航（重庆）微电子有限公司 A kind of Non-insulation bi-tower type diode module

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