CN202888153U - Metal-coated ceramic substrate with radiating function - Google Patents

Metal-coated ceramic substrate with radiating function Download PDF

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Publication number
CN202888153U
CN202888153U CN 201220511556 CN201220511556U CN202888153U CN 202888153 U CN202888153 U CN 202888153U CN 201220511556 CN201220511556 CN 201220511556 CN 201220511556 U CN201220511556 U CN 201220511556U CN 202888153 U CN202888153 U CN 202888153U
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CN
China
Prior art keywords
ceramic wafer
radiating tube
metal
cermet substrate
radiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN 201220511556
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Chinese (zh)
Inventor
麻长胜
姚玉双
张敏
聂世义
王晓宝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JIANGSU MACMIC TECHNOLOGY Co Ltd
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JIANGSU MACMIC TECHNOLOGY Co Ltd
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Priority to CN 201220511556 priority Critical patent/CN202888153U/en
Application granted granted Critical
Publication of CN202888153U publication Critical patent/CN202888153U/en
Anticipated expiration legal-status Critical
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Abstract

The utility model relates to a metal-coated ceramic substrate with the radiating function. The metal-coated ceramic substrate comprises a ceramic plate and a metal layer compounded on at least one face of the ceramic plate. At least one radiating tube is transversely arranged in the ceramic plate, and connectors on the two sides of the radiating tube are arranged on the outside of the ceramic plate, or two ends of the radiating tube are connected with the connectors on the ceramic plate. The metal-coated ceramic substrate with the radiating function is reasonable in structure and is small in size, and has a better radiating function based on original functions, the service life of a power module can be prolonged and the reliability of the power module can be improved. The metal-coated ceramic substrate can be widely applied to high-power electric power semiconductor modules, intelligent power components, automotive electronics, and solar panel components.

Description

Cover the cermet substrate with heat sinking function
Technical field
The utility model relate to a kind of with heat sinking function cover the cermet substrate, belong to technical field of semiconductors.
Background technology
Semi-conductor power module mainly comprises base plate, covers cermet substrate, semiconductor chip, electrode terminal and housing.Usually in the power model several power semiconductor chips are arranged, be integrated and be welded in or be glued on the metal level that covers the cermet substrate such as MOSFET or igbt chip and diode chip for backlight unit, electrode terminal also is welded on the metal level that covers the cermet substrate and passes housing and is connected with external equipment simultaneously, realize the input and output of power model, cover the cermet substrate and be welded on the copper soleplate again.At semi-conductor power module in the course of the work, the heat that produces of semiconductor chip can absorb rapidly by copper soleplate.Because it is little that copper soleplate and aluminium are compared specific heat, thermal runaway speed is slower, can not in time the heat in the module be shed, and dispels the heat so need be installed in the power model bottom on the radiator.
Cover the cermet substrate and be metal forming at high temperature is bonded directly to aluminium oxide (AL2Q3) ceramic substrate or aluminium nitride (ALN) the ceramic substrate special process plate on two-sided, make and cover the cermet substrate electric insulation with respect to the power model base plate also is provided when guaranteeing the good heat conductive performance, because power electronic device need to carry out work under-40 ℃ to 125 ℃ temperature cycles environment, the heat that therefore covers at present the cermet substrate is that the connected copper soleplate of dependence and the radiator that is fixed on the copper soleplate bottom dispel the heat.There is following problem in this radiator structure: 1, be installed on the radiator owing to power model, therefore space between heat-conducting silicone grease filling copper soleplate and the radiator need to be arranged, increased thermal resistance, especially the distance of chip and radiator is relatively far away, has therefore reduced radiating effect.2, cover devices such as distinguishing welding chip above the cermet substrate, and its bottom and copper soleplate welding, after the multiple welding, cover the phenomenon that the cermet substrate tends to occur indent, and can not form well, contact closely with copper soleplate, so can affect power model radiating effect at work, if the heat long time integration can not in time dissipate in power model, can greatly affect the quality of power model, even damage the chip in the power model, cause power model to damage.3, be connected to the bottom of copper soleplate when radiator, and the height of radiator is higher, therefore can increases the setting height(from bottom) of power device, make its volume larger, for some narrow and small installing spaces, then can not be suitable for.
Along with the development of high-power electric and electronic technology, cover the cermet substrate as the basic material of high-power electric and electronic circuit structure technology and interconnection technique, and single interconnect function can not satisfy growing power electronic technology.
Summary of the invention
The purpose of this utility model provides a kind of rational in infrastructure, and volume is little, has better heat sinking function on the original function basis, can improve power model life and reliability cover the cermet substrate with heat sinking function.
The utility model is that the technical scheme that achieves the above object is: a kind ofly cover the cermet substrate with heat sinking function, it is characterized in that: comprise ceramic wafer and be compounded at least metal level of one side of ceramic wafer, be provided with at least one radiating tube in the described ceramic wafer, the connector of radiating tube both sides is positioned at the outside of ceramic wafer, or the two ends of radiating tube are connected with connector on being arranged on ceramic wafer.
Wherein: be fixed with the parallel radiating tube more than three in the described ceramic wafer, or be fixed with a coiled pipe or coil pipe in the ceramic wafer, and the outer wall of radiating tube be provided with fin and the interlocking in ceramic wafer.
The THICKNESS CONTROL of described ceramic wafer is at 5~25mm.
The periphery of described connector is provided with the plural circular cone of ecto-entad.
The utility model has the following advantages after adopting technique scheme:
1, the utility model is provided with at least one root radiating tube to consist of cooling mechanism in the ceramic wafer that covers the cermet substrate, therefore can be connected with the outer loop pipeline by connector, in radiating tube, pass into coolant capable of circulation, heat in the power model work directly can be shed by covering the cermet substrate, make and cover the cermet substrate and self have heat sinking function, therefore covering the cermet substrate has increased the heat sinking function of self on the original function basis, thereby can realization and interconnection and the heat-radiating integrated function of chip and each device, compact conformation, rationally.
2, the utility model is covering integrated radiating tube on the cermet substrate and has the function of radiator, can save for power model the installation of the conventional radiator in bottom, thereby reach power model to reducing machine volume, alleviate complete machine weight, satisfy complete machine to the necessary compactness of power model and lightweight requirement, saved installation procedure.
3, the connector of the utility model in the radiating tube both sides is positioned at the outside of ceramic wafer, or is provided with the connector that patches with radiating tube at ceramic wafer, conveniently covers docking of cermet substrate and outside circulation pipe.
4, the utility model directly links to each other chip by the very thin metal level of one deck with the built-in radiating tube of ceramic wafer, reduced chip to the distance between the radiator, thereby reduced the thermal resistance of chip to radiator, simultaneously also because having saved base plate, weld layer and heat-conducting silicone grease layer have been reduced, greatly reduce the thermal resistance of module, thoroughly solved and covered cermet substrate distortion and cause the not high problem of radiating efficiency with the base plate loose contact, improved the life and reliability of power model.
Description of drawings
Below in conjunction with accompanying drawing embodiment of the present utility model is described in further detail.
Fig. 1 is the structural representation that covers the cermet substrate with heat sinking function of the present utility model.
Fig. 2 is the A-A sectional structure schematic diagram of Fig. 1.
Wherein: 1-connector, 2-metal level, 3-ceramic wafer, 4-circulation pipe, 5-radiating tube.
Embodiment
See shown in Fig. 1~2, of the present utility modelly cover the cermet substrate with heat sinking function, comprise ceramic wafer 3 and be compounded at least metal level 2 of one side of ceramic wafer 3, metal level 2 at high temperature is bonded together with ceramic wafer, loses as required more various interconnection graphs and realizes being electrically connected.Metal level 2 can be arranged on one side or the upper and lower surface of ceramic wafer 3, ceramic wafer 3 can be one of them of alumina ceramic plate, al nitride ceramic board, bismuth oxide ceramic wafer, silicon nitride ceramic plate, silicon carbide ceramics plate, metal level 2 then is metal foil layer, or by copper layer or aluminium lamination or copper aluminium composite bed etc.See shown in Fig. 1,2, be provided with at least one radiating tube 5 in the ceramic wafer 3 of the present utility model, can be fixed with the parallel radiating tube more than three 5 in this ceramic wafer 3, or see shown in Fig. 1,2, be fixed with four radiating tubes 5 in the ceramic wafer 3, the quantity of radiating tube 5 is not limit, can be according to the size setting of covering the cermet substrate.Be fixed with a coiled pipe or coil pipe in the utility model ceramic wafer 3, reach equally preferably radiating effect.The utility model is the radiating effect that reaches best, and the outer wall of radiating tube 5 is provided with fin and rabbets in ceramic wafer 3, further increases area of dissipation by fin.
See shown in Fig. 1,2, the connector 1 of the utility model radiating tube 5 both sides is positioned at the outside of ceramic wafer 3, or radiating tube 5 two ends are connected with connector on being arranged on ceramic wafer 3, the circulation pipe 4 of outside can be connected on the connector 1, the coolant of outside is passed in the radiating tube 5, carry out forced heat radiation to covering the cermet substrate.
See Fig. 1, shown in, the utility model is for making the circulation pipe 4 can be convenient and be quick installed on the connector 1, connector 1 ecto-entad is provided with circular cone above on two, circulation pipe 4 is connected after difficult drop-off, use reliable.
The THICKNESS CONTROL of the utility model ceramic wafer 3 is at 5~25mm, as adopt 8mm, 10mm, 15mm, 18mm or 20mm etc., the thickness of this ceramic wafer 3 also can be larger, as adopt 30mm, 40mm, 50mm etc., can set according to size and the installing space of power model, make and cover the cermet substrate and can satisfy working strength requirement and welding requirements, again can built-in radiating tube 5.
The utility model can be widely used in high-power electric semiconductor module, intelligent power assembly, automotive electronics, solar cell panel assembly.

Claims (5)

1. one kind covers the cermet substrate with heat sinking function, it is characterized in that: comprise ceramic wafer (3) and be compounded at least metal level (2) of one side of ceramic wafer (3), be provided with at least one radiating tube (5) in the described ceramic wafer (3), the connector (1) of radiating tube (5) both sides is positioned at the outside of ceramic wafer (3), or the two ends of radiating tube (5) are connected with connector (1) on being arranged on ceramic wafer (3).
According to claim 1 with heat sinking function cover the cermet substrate, it is characterized in that: be fixed with the parallel radiating tube more than three (5) in the described ceramic wafer (3), or be fixed with a coiled pipe or coil pipe in the ceramic wafer (3).
According to claim 1 and 2 with heat sinking function cover the cermet substrate, it is characterized in that: the outer wall of described radiating tube (5) is provided with fin and interlocking in ceramic wafer (3).
According to claim 1 with heat sinking function cover the cermet substrate, it is characterized in that: the THICKNESS CONTROL of described ceramic wafer (3) is at 5~25mm.
According to claim 1 with heat sinking function cover the cermet substrate, it is characterized in that: the periphery of described connector (1) is provided with the plural circular cone of ecto-entad.
CN 201220511556 2012-09-29 2012-09-29 Metal-coated ceramic substrate with radiating function Expired - Lifetime CN202888153U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220511556 CN202888153U (en) 2012-09-29 2012-09-29 Metal-coated ceramic substrate with radiating function

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220511556 CN202888153U (en) 2012-09-29 2012-09-29 Metal-coated ceramic substrate with radiating function

Publications (1)

Publication Number Publication Date
CN202888153U true CN202888153U (en) 2013-04-17

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881663A (en) * 2012-09-29 2013-01-16 江苏宏微科技股份有限公司 Metal-coated ceramic substrate with radiating function
CN108231604A (en) * 2018-01-24 2018-06-29 韩德军 A kind of manufacturing method of power semiconductor device
CN108598042A (en) * 2018-01-24 2018-09-28 韩德军 A kind of power inverter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102881663A (en) * 2012-09-29 2013-01-16 江苏宏微科技股份有限公司 Metal-coated ceramic substrate with radiating function
CN108231604A (en) * 2018-01-24 2018-06-29 韩德军 A kind of manufacturing method of power semiconductor device
CN108598042A (en) * 2018-01-24 2018-09-28 韩德军 A kind of power inverter

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Granted publication date: 20130417