CN102867788B - Based on the novel power model covering cermet substrate - Google Patents
Based on the novel power model covering cermet substrate Download PDFInfo
- Publication number
- CN102867788B CN102867788B CN201210374844.3A CN201210374844A CN102867788B CN 102867788 B CN102867788 B CN 102867788B CN 201210374844 A CN201210374844 A CN 201210374844A CN 102867788 B CN102867788 B CN 102867788B
- Authority
- CN
- China
- Prior art keywords
- ceramic wafer
- cermet substrate
- power model
- shell
- radiating tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of based on the novel power model covering cermet substrate, comprise shell and cover cermet substrate, the metal level covering cermet substrate is connected with semiconductor chip and electrode terminal, electrode terminal passes shell and is arranged on cover top portion, cover cermet substrate to comprise ceramic wafer and be compounded in ceramic wafer metal level at least simultaneously, at least one radiating tube is provided with in ceramic wafer, the connector of radiating tube both sides is positioned at the outside of ceramic wafer, or the two ends of radiating tube are connected with the connector be arranged on ceramic wafer, the bottom of shell is fixedly connected on ceramic wafer.The present invention is rational in infrastructure, and volume is little, and radiating efficiency is high, can improve the life and reliability of power model, can be widely used in high-power electric semiconductor module, intelligent power assembly, automotive electronics, solar cell panel assembly.
Description
Technical field
The present invention relates to a kind of based on the novel power model covering cermet substrate, belong to technical field of semiconductors.
Background technology
Semi-conductor power module mainly comprises base plate, covers cermet substrate, semiconductor chip, electrode terminal and housing.Several power semiconductor chip is had in usual power model, as MOSFET or igbt chip and diode chip for backlight unit by integrated and be welded in or be glued to cover cermet substrate metal level on, simultaneously electrode terminal be also welded on cover cermet substrate metal level on and pass housing and be connected with external equipment, realize the input and output of power model, cover cermet substrate and be welded on again on copper soleplate.At semi-conductor power module in the course of the work, the heat that semiconductor chip produces absorbs rapidly by copper soleplate.Because copper soleplate specific heat compared with aluminium is little, thermal runaway speed is comparatively slow, can not be shed by the heat in module in time, therefore need dispel the heat being arranged on bottom power model on radiator.
Cover cermet substrate be metal forming is at high temperature bonded directly to aluminium oxide (AL2Q3) ceramic substrate or aluminium nitride (ALN) ceramic substrate two-sided on special process plate, make to cover cermet substrate while ensureing good heat conductive performance, additionally provide electric insulation relative to power model base plate, because power electronic device needs to carry out work under the temperature cycles environment of-40 DEG C to 125 DEG C, the heat of therefore current power model is that the connected copper soleplate of dependence and the radiator being fixed on copper soleplate bottom dispel the heat.There is following problem in this radiator structure: 1, because power model is installed on a heat sink, therefore the space between heat-conducting silicone grease filling copper soleplate and radiator is needed, add thermal resistance, especially the distance of chip and radiator is relatively far away, because this reducing radiating effect.2, cover above cermet substrate and distinguish the devices such as welding chip, and weld with copper soleplate bottom it, after multiple welding, cover the phenomenon that indent often appears in cermet substrate, and can not be formed well with copper soleplate, contact closely, therefore power model radiating effect at work can be affected, if heat long time integration can not dissipate in time in power model, greatly can affect the quality of power model, even damage the chip in power model, cause power model to damage.3, when radiator is connected to the bottom of copper soleplate, and the height of radiator is higher, therefore can increase the setting height(from bottom) of power device, makes its volume comparatively large, for the installing space that some are narrow and small, then can not be suitable for.
Summary of the invention
The object of this invention is to provide a kind of rational in infrastructure, volume is little, and radiating efficiency is high, can improve the life and reliability of power model based on the novel power model covering cermet substrate.
The present invention is the technical scheme achieved the above object: a kind of based on the novel power model covering cermet substrate, comprise shell and cover cermet substrate, the metal level covering cermet substrate is connected with semiconductor chip and electrode terminal, electrode terminal passes shell and is arranged on cover top portion, it is characterized in that: the described cermet substrate that covers comprises ceramic wafer and is compounded in ceramic wafer metal level at least simultaneously, at least one radiating tube is provided with in ceramic wafer, the connector of radiating tube both sides is positioned at the outside of ceramic wafer, or the two ends of radiating tube are connected with the connector be arranged on ceramic wafer, the bottom of shell is fixedly connected on ceramic wafer.
Described ceramic wafer internal fixtion has the parallel radiating tube of more than three, or ceramic wafer internal fixtion has a coiled pipe or coil pipe, and the outer wall of radiating tube is provided with fin and rabbets in ceramic wafer, and the THICKNESS CONTROL of ceramic wafer is at 5 ~ 25mm.
The periphery of described connector is provided with the plural circular cone of ecto-entad.
Described outer casing bottom is provided with seam, and the seam of shell is arranged on the periphery on ceramic wafer top, and ceramic wafer is fixedly connected with shell by fluid sealant.
Be arranged on base by cushion pad bottom described ceramic wafer, and the surrounding on base arranges at least two installing holes.
Described base is provided with heavy stand, and cushion pad is arranged in heavy stand.
The present invention has the following advantages after adopting technique scheme:
1, the present invention is provided with at least one root radiating tube to form cooling mechanism in the ceramic wafer covering cermet substrate, therefore be connected with outer loop pipeline by connector, coolant capable of circulation is passed in radiating tube, heat in power model work directly can be shed by covering cermet substrate, make to cover cermet substrate and self there is heat sinking function, therefore the heat sinking function that cermet substrate adds self on original function basis is covered, thus can realize and the interconnection of chip and each device and heat-radiating integrated function, compact conformation, rationally.
2, the present invention cermet substrate is integrated with radiating tube and the function with radiator covering, the installation of bottom conventional diffusers can be saved for power model, thus reach power model to reduction machine volume, alleviate complete machine weight, meeting complete machine must compact and lightweight requirement to power model, saves installation procedure.
3, the present invention is positioned at the outside of ceramic wafer at the connector of radiating tube both sides, or on ceramic wafer, be provided with the connector patched with radiating tube, conveniently covers docking of cermet substrate and outside circulation pipe.
4, the present invention eliminates base plate compared with conventional power module, can reduce welding times, makes simplification power model manufacturing procedure, thus reduces module processing cost, improve rate of finished products.
5, chip is connected by the radiating tube that metal level that one deck is very thin is directly built-in with ceramic wafer by the present invention, reduce the distance between chip to radiator, thus reduce the thermal resistance of chip to radiator, simultaneously also because eliminating base plate, decrease weld layer and thermal conductive silicon lipid layer, greatly reduce the thermal resistance of module, thoroughly solve that to cover the distortion of cermet substrate bad and cause the problem that radiating efficiency is not high with contacts baseplate, improve the life and reliability of power model.
6, the present invention adds cushion pad at ceramic wafer, be arranged on base by cushioning heat, therefore good buffering effect can be played, improve the anti-shake performance of power model, the shock and vibration requirement that the field such as auto industry, wind energy is a large amount of can be met, high-power electric semiconductor module, intelligent power assembly, automotive electronics, solar cell panel assembly can be widely used in.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, embodiments of the invention are described in further detail.
Fig. 1 is of the present invention based on the novel structural representation covering the power model of cermet substrate.
Fig. 2 is the A-A sectional structure schematic diagram of Fig. 1.
The novel detonation configuration schematic diagram covering the power model of cermet substrate is the present invention is based in Fig. 3.
Wherein: 1-shell, 11-seam, 2-electrode terminal, 3-connector, 4-circulation pipe, 5-base, 51-installing hole, 52-heavy stand, 6-cushion pad, 7-covers cermet substrate, 71-ceramic wafer, 72-metal level, 8-radiating tube, 9-chip.
Embodiment
See shown in Fig. 1 ~ 3, the present invention is based on the novel power model covering cermet substrate, comprise shell 1 and cover cermet substrate 7, the metal level 72 covering cermet substrate 7 is connected with semiconductor chip 9 and electrode terminal 2, electrode terminal 2 passes shell 1 and is arranged on shell 1 top, be connected with external equipment by electrode terminal 2, realize the input and output of power model.
See shown in Fig. 1 ~ 3, the cermet substrate 7 that covers of the present invention comprises ceramic wafer 71 and is compounded in ceramic wafer 71 metal level 72 at least simultaneously, metal level 72 is at high temperature bonded together with ceramic wafer 71, etch various interconnection graph more as required and realize electrical connection, metal level 72 of the present invention can be arranged on one side or the upper and lower surface of ceramic wafer 71, ceramic wafer 71 can be alumina ceramic plate, al nitride ceramic board, bismuth oxide ceramic wafer, silicon nitride ceramic plate, one of them of silicon carbide ceramics plate, metal level 72 is then metal foil layer, or by layers of copper or aluminium lamination or Copper-Aluminum compound layer etc.See shown in Fig. 1 ~ 3, at least one radiating tube 8 is provided with in ceramic wafer 71 of the present invention, the parallel radiating tube 8 of more than three can be fixed with in this ceramic wafer 71, or see shown in Fig. 1,2, ceramic wafer 71 internal fixtion has four radiating tubes 8, the quantity of radiating tube 8 is not limit, and can arrange according to the size covering cermet substrate 7.Ceramic wafer 71 internal fixtion of the present invention has a coiled pipe or coil pipe, reaches good radiating effect equally.The present invention reaches best radiating effect, and the outer wall of radiating tube 8 is provided with fin and rabbets in ceramic wafer 71, increases area of dissipation further by fin.See shown in Fig. 1 ~ 3, the connector 3 of radiating tube 8 both sides of the present invention is positioned at the outside of ceramic wafer 71, or radiating tube 8 two ends are connected with the connector be arranged on ceramic wafer 71, can the circulation pipe 4 of outside be connected on connector 3, the coolant of outside being passed in radiating tube 8, carrying out forced heat radiation to covering cermet substrate 7.
See shown in Fig. 1 ~ 3, the present invention can facilitate for making circulation pipe 4 and be quick installed on connector 3, and connector 3 ecto-entad is provided with circular cone above on two, also makes circulation pipe 4 connect rear difficult drop-off, uses reliable.
The THICKNESS CONTROL of ceramic wafer 71 of the present invention is at 5 ~ 25mm, as adopted 8mm, 10mm, 15mm, 18mm or 20mm etc., the thickness of this ceramic wafer 71 also can be larger, as adopted 30mm, 40mm, 50mm etc., can according to the size of power model and installing space setting, make to cover cermet substrate 7 and can meet working strength requirement and welding requirements, again can built-in radiating tube.
See shown in Fig. 1 ~ 3, the bottom of shell 1 of the present invention is fixedly connected on ceramic wafer 71, is provided with seam 11 bottom this shell 1, and the seam 11 of shell 1 is arranged on the periphery on ceramic wafer 71 top, and ceramic wafer 71 is fixedly connected with shell 1 by fluid sealant.
See shown in Fig. 1 ~ 3, be arranged on base 5 by cushion pad 6 bottom ceramic wafer 71 of the present invention, and the surrounding on base 5 arranges at least two installing holes 51, as shown in Figure 3, base 5 is provided with heavy stand 52, cushion pad 6 is arranged in heavy stand 52, cushion pad 6 adopts the silicon rubber material of good springiness and arranges bottom ceramic wafer 71, therefore good buffering effect is served, improve reliability, auto industry can be met, the shock and vibration requirement that the fields such as wind energy are a large amount of, base 5 of the present invention adopts the aluminum alloy material of lighter weight, by the installing hole 51 arranged, can power model be fixed in complete machine, because cushion pad 6 is embedded in base 5, make whole modular assembly more firm.
Claims (5)
1. one kind based on the novel power model covering cermet substrate, comprise shell (1) and cover cermet substrate (7), the metal level (72) covering cermet substrate (7) is connected with semiconductor chip (9) and electrode terminal (2), electrode terminal (2) is through shell (1) and be arranged on shell (1) top, it is characterized in that: the described cermet substrate (7) that covers comprises ceramic wafer (71) and is compounded in ceramic wafer (71) metal level (72) at least simultaneously, the THICKNESS CONTROL of described ceramic wafer (71) is at 5 ~ 25mm, at least one radiating tube (8) is provided with in ceramic wafer (71), the connector (3) of radiating tube (8) both sides is positioned at the outside of ceramic wafer (71), or the two ends of radiating tube (8) are connected with the connector (3) be arranged on ceramic wafer (71), the bottom of shell (1) is fixedly connected on ceramic wafer (71), wherein, described ceramic wafer (71) internal fixtion has the parallel radiating tube (8) of more than three, or ceramic wafer (71) internal fixtion has a coiled pipe or coil pipe, the outer wall of described radiating tube (8) is provided with fin and rabbets in ceramic wafer (71).
2. according to claim 1 based on the novel power model covering cermet substrate, it is characterized in that: the periphery of described connector (3) is provided with the plural circular cone of ecto-entad.
3. according to claim 1 based on the novel power model covering cermet substrate, it is characterized in that: described shell (1) bottom is provided with seam (11), the seam (11) of shell (1) is arranged on the periphery on ceramic wafer (71) top, and ceramic wafer (71) is fixedly connected with shell (1) by fluid sealant.
4. according to claim 1 based on the novel power model covering cermet substrate, it is characterized in that: described ceramic wafer (71) bottom is arranged on base (5) by cushion pad (6), and the surrounding on base (5) arranges at least two installing holes (51).
5. according to claim 4 based on the novel power model covering cermet substrate, it is characterized in that: described base (5) is provided with heavy stand (52), and cushion pad (6) is arranged in heavy stand (52).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210374844.3A CN102867788B (en) | 2012-09-29 | 2012-09-29 | Based on the novel power model covering cermet substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210374844.3A CN102867788B (en) | 2012-09-29 | 2012-09-29 | Based on the novel power model covering cermet substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102867788A CN102867788A (en) | 2013-01-09 |
| CN102867788B true CN102867788B (en) | 2016-03-02 |
Family
ID=47446557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210374844.3A Active CN102867788B (en) | 2012-09-29 | 2012-09-29 | Based on the novel power model covering cermet substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102867788B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666057B (en) * | 2018-04-03 | 2024-04-30 | 广东风华高新科技股份有限公司 | Chip resistor and preparation method thereof |
| CN112311251B (en) * | 2020-09-18 | 2023-05-05 | 威海新佳电子有限公司 | Rectifying module |
| CN113990823B (en) * | 2021-10-22 | 2022-09-13 | 珠海粤科京华科技有限公司 | Metallized ceramic substrate for power module and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101175389A (en) * | 2006-11-21 | 2008-05-07 | 中山大学 | Cooling substrate of micro heat pipe |
| CN201741690U (en) * | 2010-07-22 | 2011-02-09 | 江苏宏微科技有限公司 | Light-weight power semi-conductor module |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123227A (en) * | 2006-08-08 | 2008-02-13 | 台达电子工业股份有限公司 | Luminescent and heat radiation device and its encapsulation making method |
| CN201115244Y (en) * | 2007-09-05 | 2008-09-10 | 蔡桦欣 | Highly conductive heat insulation radiator |
| US20100078151A1 (en) * | 2008-09-30 | 2010-04-01 | Osram Sylvania Inc. | Ceramic heat pipe with porous ceramic wick |
| CN101533810A (en) * | 2009-04-20 | 2009-09-16 | 浙江大学 | Pulsating heat pipe radiator having foam |
| CN201667332U (en) * | 2010-03-29 | 2010-12-08 | 比亚迪股份有限公司 | Semiconductor power module |
| CN101826494B (en) * | 2010-04-13 | 2011-06-22 | 北京大学 | Heat dissipation device based on carbon nanotube arrays and low temperature co-fired ceramics and preparation method |
-
2012
- 2012-09-29 CN CN201210374844.3A patent/CN102867788B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101175389A (en) * | 2006-11-21 | 2008-05-07 | 中山大学 | Cooling substrate of micro heat pipe |
| CN201741690U (en) * | 2010-07-22 | 2011-02-09 | 江苏宏微科技有限公司 | Light-weight power semi-conductor module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102867788A (en) | 2013-01-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11139278B2 (en) | Low parasitic inductance power module and double-faced heat-dissipation low parasitic inductance power module | |
| JP4586087B2 (en) | Power semiconductor module | |
| US10818574B2 (en) | Plug-in type power module and subsystem thereof | |
| CN106558563B (en) | Power module and vehicle with same | |
| CN108417546B (en) | Power electronic module | |
| WO2016031317A1 (en) | Power semiconductor device and power semiconductor device production method | |
| CN102867788B (en) | Based on the novel power model covering cermet substrate | |
| CN102710102A (en) | Liquid-cooled insulated gate bipolar transistor (IGBT) converter and manufacturing method | |
| CN202888153U (en) | Metal-coated ceramic substrate with radiating function | |
| CN110246808B (en) | Power module with reduced junction temperature and method of manufacturing the same | |
| CN202888152U (en) | Power module based on novel metal-coated ceramic substrate | |
| JP5164793B2 (en) | Power semiconductor device | |
| CN211702829U (en) | Electric appliance structure with heat dissipation shielding function | |
| CN210379025U (en) | Power device packaging structure | |
| JP2024500176A (en) | power module | |
| CN203071056U (en) | Heat radiation mechanism for power module | |
| CN202616229U (en) | Liquid-cooling IGBT (Insulated Gate Bipolar Translator) converter device | |
| CN104617064B (en) | Stack-up power module | |
| CN112038245A (en) | Connection process of internal binding line of power module | |
| CN104617085B (en) | It is superimposed assembly type power model | |
| CN113782504B (en) | Simplified packaging structure of power module of integrated radiator and manufacturing method | |
| CN202275814U (en) | Metal-clad ceramic substrate | |
| CN102881663A (en) | Metal-coated ceramic substrate with radiating function | |
| CN219204353U (en) | Power module and electronic equipment | |
| CN217641295U (en) | Low-inductance silicon carbide module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |