CN102867788A - Power module based on novel metal-coated ceramic substrate - Google Patents
Power module based on novel metal-coated ceramic substrate Download PDFInfo
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- CN102867788A CN102867788A CN2012103748443A CN201210374844A CN102867788A CN 102867788 A CN102867788 A CN 102867788A CN 2012103748443 A CN2012103748443 A CN 2012103748443A CN 201210374844 A CN201210374844 A CN 201210374844A CN 102867788 A CN102867788 A CN 102867788A
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- ceramic wafer
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- cermet substrate
- power model
- radiating tube
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Abstract
The invention relates to a power module based on a novel metal-coated ceramic substrate. The power module based on the novel metal-coated ceramic substrate comprises a casing and the metal-coated ceramic substrate, a semiconductor chip and an electrode terminal are connected with a metal layer of the metal-coated ceramic substrate, the electrode terminal penetrates through the casing and is arranged at the top of the casing, the metal-coated ceramic substrate comprises a ceramic plate and the metal layer compounded on at least one face of the ceramic plate, at least one radiating tube is arranged in the ceramic plate, connectors on two sides of the radiating tube are positioned on the external side of the ceramic plate, or two ends of the radiating tube are connected with the connectors arranged on the ceramic plate, and the bottom of the casing is fixedly connected on the ceramic plate. The power module based on the novel metal-coated ceramic substrate is reasonable in structure, small in size and high in radiating efficiency, service life of the power module can be prolonged, reliability of the power module can be improved, and the power module can be widely applied to high-power electric power semiconductor modules, intelligent power components, automotive electronics and solar panel components.
Description
Technical field
The present invention relates to a kind ofly based on the novel power model that covers the cermet substrate, belong to technical field of semiconductors.
Background technology
Semi-conductor power module mainly comprises base plate, covers cermet substrate, semiconductor chip, electrode terminal and housing.Usually in the power model several power semiconductor chips are arranged, be integrated and be welded in or be glued on the metal level that covers the cermet substrate such as MOSFET or igbt chip and diode chip for backlight unit, electrode terminal also is welded on the metal level that covers the cermet substrate and passes housing and is connected with external equipment simultaneously, realize the input and output of power model, cover the cermet substrate and be welded on the copper soleplate again.At semi-conductor power module in the course of the work, the heat that produces of semiconductor chip can absorb rapidly by copper soleplate.Because it is little that copper soleplate and aluminium are compared specific heat, thermal runaway speed is slower, can not in time the heat in the module be shed, and dispels the heat therefore need be installed in the power model bottom on the radiator.
Cover the cermet substrate and be metal forming at high temperature is bonded directly to aluminium oxide (AL2Q3) ceramic substrate or aluminium nitride (ALN) the ceramic substrate special process plate on two-sided, make and cover the cermet substrate electric insulation with respect to the power model base plate also is provided when guaranteeing the good heat conductive performance, because power electronic device need to carry out work under-40 ℃ to 125 ℃ temperature cycles environment, therefore the heat of present power model is that the connected copper soleplate of dependence and the radiator that is fixed on the copper soleplate bottom dispel the heat.There is following problem in this radiator structure: 1, be installed on the radiator owing to power model, therefore space between heat-conducting silicone grease filling copper soleplate and the radiator need to be arranged, increased thermal resistance, especially the distance of chip and radiator is relatively far away, has therefore reduced radiating effect.2, cover devices such as distinguishing welding chip above the cermet substrate, and its bottom and copper soleplate welding, after the multiple welding, cover the phenomenon that the cermet substrate tends to occur indent, and can not form well, contact closely with copper soleplate, therefore can affect power model radiating effect at work, if the heat long time integration can not in time dissipate in power model, can greatly affect the quality of power model, even damage the chip in the power model, cause power model to damage.3, be connected to the bottom of copper soleplate when radiator, and the height of radiator is higher, therefore can increases the setting height(from bottom) of power device, make its volume larger, for some narrow and small installing spaces, then can not be suitable for.
Summary of the invention
The purpose of this invention is to provide a kind of rational in infrastructurely, volume is little, and radiating efficiency is high, can improve power model life and reliability based on the novel power model that covers the cermet substrate.
The present invention is that the technical scheme that achieves the above object is: a kind of based on the novel power model that covers the cermet substrate, comprise shell and cover the cermet substrate, the metal level that covers the cermet substrate is connected with semiconductor chip and electrode terminal, electrode terminal passes shell and is arranged on cover top portion, it is characterized in that: the described cermet substrate that covers comprises ceramic wafer and is compounded at least metal level of one side of ceramic wafer, be provided with at least one radiating tube in the ceramic wafer, the connector of radiating tube both sides is positioned at the outside of ceramic wafer, or the two ends of radiating tube are connected with connector on being arranged on ceramic wafer, and the bottom of shell is fixedly connected on the ceramic wafer.
Be fixed with the parallel radiating tube more than three in the described ceramic wafer, or be fixed with a coiled pipe or coil pipe in the ceramic wafer, and the outer wall of radiating tube be provided with fin and the interlocking in ceramic wafer, the THICKNESS CONTROL of ceramic wafer is at 5～25mm.
The periphery of described connector is provided with the plural circular cone of ecto-entad.
Described outer casing bottom is provided with seam, and the seam of shell is arranged on the periphery on ceramic wafer top, and ceramic wafer is fixedly connected with shell by fluid sealant.
Described ceramic wafer bottom is arranged on the base by cushion pad, and at least two installing holes of setting all around on the base.
Described base is provided with heavy stand, and cushion pad is arranged in the heavy stand.
The present invention has the following advantages after adopting technique scheme:
1, the present invention is provided with at least one root radiating tube to consist of cooling mechanism in the ceramic wafer that covers the cermet substrate, therefore can be connected with the outer loop pipeline by connector, in radiating tube, pass into coolant capable of circulation, heat in the power model work directly can be shed by covering the cermet substrate, make and cover the cermet substrate and self have heat sinking function, therefore covering the cermet substrate has increased the heat sinking function of self on the original function basis, thereby can realization and interconnection and the heat-radiating integrated function of chip and each device, compact conformation, rationally.
2, the present invention is being covered integrated radiating tube on the cermet substrate and is had the function of radiator, can save for power model the installation of the conventional radiator in bottom, thereby reach power model to reducing machine volume, alleviate complete machine weight, satisfy complete machine to the necessary compactness of power model and lightweight requirement, saved installation procedure.
3, the connector of the present invention in the radiating tube both sides is positioned at the outside of ceramic wafer, or is provided with the connector that patches with radiating tube at ceramic wafer, conveniently covers docking of cermet substrate and outside circulation pipe.
4, the present invention compares with conventional power module and has omitted base plate, can reduce welding times, makes to simplify the power model manufacturing procedure, thereby has reduced the module processing cost, has improved rate of finished products.
5, the present invention directly links to each other chip by the very thin metal level of one deck with the built-in radiating tube of ceramic wafer, reduced chip to the distance between the radiator, thereby reduced the thermal resistance of chip to radiator, simultaneously also because having saved base plate, weld layer and heat-conducting silicone grease layer have been reduced, greatly reduce the thermal resistance of module, thoroughly solved and covered cermet substrate distortion and cause the not high problem of radiating efficiency with the base plate loose contact, improved the life and reliability of power model.
6, the present invention in the increase of ceramic wafer cushion pad, be arranged on the base by cushioning heat, therefore can play good buffering effect, improve the anti-shake performance of power model, the a large amount of shock and vibration requirements in field such as auto industry, wind energy can be satisfied, high-power electric semiconductor module, intelligent power assembly, automotive electronics, solar cell panel assembly can be widely used in.
Description of drawings
Below in conjunction with accompanying drawing embodiments of the invention are described in further detail.
Fig. 1 is of the present invention based on the novel structural representation that covers the power model of cermet substrate.
Fig. 2 is the A-A sectional structure schematic diagram of Fig. 1.
The present invention is based on the novel blast structural representation that covers the power model of cermet substrate among Fig. 3.
Wherein: the 1-shell, the 11-seam, the 2-electrode terminal, the 3-connector, the 4-circulation pipe, the 5-base, the 51-installing hole, the 52-heavy stand, 6-cushion pad, 7-cover the cermet substrate, 71-ceramic wafer, 72-metal level, 8-radiating tube, 9-chip.
Embodiment
See shown in Fig. 1～3, the present invention is based on the novel power model that covers the cermet substrate, comprise shell 1 and cover cermet substrate 7, the metal level 72 that covers cermet substrate 7 is connected with semiconductor chip 9 and electrode terminal 2, electrode terminal 2 passes shell 1 and is arranged on shell 1 top, be connected with external equipment by electrode terminal 2, realize the input and output of power model.
See shown in Fig. 1～3, the cermet substrate 7 that covers of the present invention comprises ceramic wafer 71 and is compounded at least metal level 72 of one side of ceramic wafer 71, metal level 72 is at high temperature to be bonded together with ceramic wafer 71, etching as required more various interconnection graphs realizes being electrically connected, metal level 72 of the present invention can be arranged on one side or the upper and lower surface of ceramic wafer 71, ceramic wafer 71 can be alumina ceramic plate, al nitride ceramic board, the bismuth oxide ceramic wafer, silicon nitride ceramic plate, one of them of silicon carbide ceramics plate, metal level 72 then is metal foil layer, or by copper layer or aluminium lamination or copper aluminium composite bed etc.See shown in Fig. 1～3, be provided with at least one radiating tube 8 in the ceramic wafer 71 of the present invention, can be fixed with the parallel radiating tube more than three 8 in this ceramic wafer 71, or see shown in Fig. 1,2, be fixed with four radiating tubes 8 in the ceramic wafer 71, the quantity of radiating tube 8 is not limit, can be according to the size setting of covering cermet substrate 7.Be fixed with a coiled pipe or coil pipe in the ceramic wafer 71 of the present invention, reach equally preferably radiating effect.The present invention is the radiating effect that reaches best, and the outer wall of radiating tube 8 is provided with fin and rabbets in ceramic wafer 71, further increases area of dissipation by fin.See shown in Fig. 1～3, the connector 3 of radiating tube of the present invention 8 both sides is positioned at the outside of ceramic wafer 71, or radiating tube 8 two ends are connected with connector on being arranged on ceramic wafer 71, the circulation pipe 4 of outside can be connected on the connector 3, the coolant of outside is passed in the radiating tube 8, carry out forced heat radiation to covering cermet substrate 7.
See shown in Fig. 1～3, the present invention is for conveniently and being quick installed on the connector 3 circulation pipe 4, and connector 3 ecto-entads are provided with circular cone above on two, also make circulation pipe 4 connect rear difficult drop-off, use reliably.
The THICKNESS CONTROL of ceramic wafer 71 of the present invention is at 5～25mm, as adopt 8mm, 10mm, 15mm, 18mm or 20mm etc., the thickness of this ceramic wafer 71 also can be larger, as adopt 30mm, 40mm, 50mm etc., can set according to size and the installing space of power model, make and cover cermet substrate 7 and can satisfy working strength requirement and welding requirements, again can built-in radiating tube.
See shown in Fig. 1～3, the bottom of shell 1 of the present invention is fixedly connected on the ceramic wafer 71, and this shell 1 bottom is provided with seam 11, and the seam 11 of shell 1 is arranged on the periphery on ceramic wafer 71 tops, and ceramic wafer 71 is fixedly connected with shell 1 by fluid sealant.
See shown in Fig. 1～3, ceramic wafer of the present invention 71 bottoms are arranged on the base 5 by cushion pad 6, and at least two installing holes 51 are set around on the base 5, as shown in Figure 3, base 5 is provided with heavy stand 52, cushion pad 6 is arranged in the heavy stand 52, cushion pad 6 adopts the silicon rubber material of good springiness and ceramic wafer 71 bottoms is set, therefore played good buffering effect, improve reliability, can satisfy auto industry, the shock and vibration requirement that the fields such as wind energy are a large amount of, base 5 of the present invention adopts the aluminum alloy material of lighter weight, and the installing hole 51 by arranging can be fixed on power model in the complete machine, because cushion pad 6 is embedded in the base 5, so that whole modular assembly is more firm.
Claims (8)
1. one kind based on the novel power model that covers the cermet substrate, comprise shell (1) and cover cermet substrate (7), the metal level (72) that covers cermet substrate (7) is connected with semiconductor chip (9) and electrode terminal (2), electrode terminal (2) passes shell (1) and is arranged on shell (1) top, it is characterized in that: the described cermet substrate (7) that covers comprises ceramic wafer (71) and is compounded at least metal level (72) of one side of ceramic wafer (71), be provided with at least one radiating tube (8) in the described ceramic wafer (71), the connector (3) of radiating tube (8) both sides is positioned at the outside of ceramic wafer (71), or the two ends of radiating tube (8) are connected with connector (3) on being arranged on ceramic wafer (71), and the bottom of shell (1) is fixedly connected on the ceramic wafer (71).
2. according to claim 1 based on the novel power model that covers the cermet substrate, it is characterized in that: be fixed with the parallel radiating tube more than three (8) in the described ceramic wafer (71), or be fixed with a coiled pipe or coil pipe in the ceramic wafer (71).
3. according to claim 1 and 2 based on the novel power model that covers the cermet substrate, it is characterized in that: the outer wall of described radiating tube (8) is provided with fin and rabbets in ceramic wafer (71).
4. according to claim 1 and 2 based on the novel power model that covers the cermet substrate, it is characterized in that: the THICKNESS CONTROL of described ceramic wafer (71) is at 5～25mm.
5. according to claim 1 based on the novel power model that covers the cermet substrate, it is characterized in that: the periphery of described connector (3) is provided with the plural circular cone of ecto-entad.
6. according to claim 1 based on the novel power model that covers the cermet substrate, it is characterized in that: described shell (1) bottom is provided with seam (11), the seam (11) of shell (1) is arranged on the periphery on ceramic wafer (71) top, and ceramic wafer (71) is fixedly connected with shell (1) by fluid sealant.
7. according to claim 1 based on the novel power model that covers the cermet substrate, it is characterized in that: described ceramic wafer (71) bottom is arranged on the base (5) by cushion pad (6), and at least two installing holes (51) of setting all around on the base (5).
8. according to claim 7 based on the novel power model that covers the cermet substrate, it is characterized in that: described base (5) is provided with heavy stand (52), and cushion pad (6) is arranged in the heavy stand (52).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210374844.3A CN102867788B (en) | 2012-09-29 | 2012-09-29 | Based on the novel power model covering cermet substrate |
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| CN201210374844.3A CN102867788B (en) | 2012-09-29 | 2012-09-29 | Based on the novel power model covering cermet substrate |
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| CN102867788A true CN102867788A (en) | 2013-01-09 |
| CN102867788B CN102867788B (en) | 2016-03-02 |
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Cited By (3)
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| CN108666057A (en) * | 2018-04-03 | 2018-10-16 | 广东风华高新科技股份有限公司 | A kind of chip resistor and preparation method thereof |
| CN112311251A (en) * | 2020-09-18 | 2021-02-02 | 威海新佳电子有限公司 | Rectifier module |
| CN113990823A (en) * | 2021-10-22 | 2022-01-28 | 珠海粤科京华科技有限公司 | Metallized ceramic substrate for power module and manufacturing method thereof |
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| CN101123227A (en) * | 2006-08-08 | 2008-02-13 | 台达电子工业股份有限公司 | Luminescent and heat radiation device and its encapsulation making method |
| CN101175389A (en) * | 2006-11-21 | 2008-05-07 | 中山大学 | Cooling substrate of micro heat pipe |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108666057A (en) * | 2018-04-03 | 2018-10-16 | 广东风华高新科技股份有限公司 | A kind of chip resistor and preparation method thereof |
| CN112311251A (en) * | 2020-09-18 | 2021-02-02 | 威海新佳电子有限公司 | Rectifier module |
| CN113990823A (en) * | 2021-10-22 | 2022-01-28 | 珠海粤科京华科技有限公司 | Metallized ceramic substrate for power module and manufacturing method thereof |
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| CN102867788B (en) | 2016-03-02 |
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