CN108666057A - A kind of chip resistor and preparation method thereof - Google Patents
A kind of chip resistor and preparation method thereof Download PDFInfo
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- CN108666057A CN108666057A CN201810296003.2A CN201810296003A CN108666057A CN 108666057 A CN108666057 A CN 108666057A CN 201810296003 A CN201810296003 A CN 201810296003A CN 108666057 A CN108666057 A CN 108666057A
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- resistance
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- resistor
- alloy
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- 238000002360 preparation method Methods 0.000 title claims description 13
- 239000010410 layer Substances 0.000 claims abstract description 156
- 239000011241 protective layer Substances 0.000 claims abstract description 70
- 239000000956 alloy Substances 0.000 claims abstract description 53
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000011888 foil Substances 0.000 claims abstract description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 29
- 239000010949 copper Substances 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- 238000005498 polishing Methods 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical group [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 238000000227 grinding Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000004070 electrodeposition Methods 0.000 claims description 4
- 229910000632 Alusil Inorganic materials 0.000 claims description 3
- 229910001021 Ferroalloy Inorganic materials 0.000 claims description 3
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 3
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 3
- NWLCFADDJOPOQC-UHFFFAOYSA-N [Mn].[Cu].[Sn] Chemical compound [Mn].[Cu].[Sn] NWLCFADDJOPOQC-UHFFFAOYSA-N 0.000 claims description 3
- 238000003486 chemical etching Methods 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- 229910001120 nichrome Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 229910000896 Manganin Inorganic materials 0.000 claims description 2
- 229910000792 Monel Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 239000004952 Polyamide Substances 0.000 claims 1
- 150000003949 imides Chemical class 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 229920000570 polyether Polymers 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 abstract description 9
- 239000000047 product Substances 0.000 description 20
- 239000003822 epoxy resin Substances 0.000 description 15
- 238000007747 plating Methods 0.000 description 15
- 229920000647 polyepoxide Polymers 0.000 description 15
- 238000007639 printing Methods 0.000 description 12
- 239000004642 Polyimide Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 239000002002 slurry Substances 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000012797 qualification Methods 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 235000011121 sodium hydroxide Nutrition 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000004697 Polyetherimide Substances 0.000 description 2
- 238000003854 Surface Print Methods 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- UTICYDQJEHVLJZ-UHFFFAOYSA-N copper manganese nickel Chemical compound [Mn].[Ni].[Cu] UTICYDQJEHVLJZ-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/18—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/032—Housing; Enclosing; Embedding; Filling the housing or enclosure plural layers surrounding the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/142—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors the terminals or tapping points being coated on the resistive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/07—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by resistor foil bonding, e.g. cladding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/28—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals
- H01C17/288—Apparatus or processes specially adapted for manufacturing resistors adapted for applying terminals by thin film techniques
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
- Details Of Resistors (AREA)
Abstract
The invention discloses a kind of chip resistors, including insulating substrate；The upper surface of the insulating substrate is equipped with first resistor layer; the lower surface of the insulating substrate is equipped with second resistance layer; the upper surface of the end of the first resistor layer is equipped with a pair of of first electrode layer; the lower surface of the end of the second resistance layer is equipped with a pair of of the second electrode lay; the upper surface of the first resistor layer is covered with the first protective layer; the upper surface of first protective layer is covered with the second protective layer; the lower surface of the second resistance layer is covered with third protective layer, and the lower surface of the third protective layer is covered with the 4th protective layer；The first resistor layer and second resistance layer are alloy layers of foil.The temperature resistance drift ability of chip resistor of the present invention, power tolerance are higher, and the long-time stability and environmental resistance of product are preferable.
Description
Technical field
The present invention relates to a kind of resistor and preparation method thereof, especially a kind of chip resistor and preparation method thereof.
Background technology
Existing capsule resistor element, generally use material are the heat dissipation film of epoxy resin, by insulating substrate and alloy electricity
Resistance layer is bonded together, and then by way of etching, oxidation, printing, plating or chemical plating, is respectively formed on resistive layer interior
Portion's electrode layer, oxide layer, protective layer and external electrode layer, to produce the resistive element of different resistance values.
Existing capsule resistor element is although simple for process, realizes that difficulty is little, at low cost, but product uses epoxy resin
Heat dissipation film substrate and resistance alloys layer are bonded, because the high-temperature stability of epoxy resin is poor, when product is long-term
The viscosity for being possible to occur epoxy resin in the environment of work declines, and resistance alloys layer is caused to be detached with insulating substrate, when
When occurring internal stress inside resistance, it will cause to impact to resistive layer, form slight crack or resistive element disconnects, resistive element is caused to lose
Effect.In addition, the design of conventional single layer protection, the protection for electric current inductive reactance is inadequate, and electric current inductive reactance is for essence
True current measurement (electric current is generally mA grades), therefore the influence of external environment must fully consider, including humidity, salt fog, acidity
Corrosion etc..
Invention content
Based on this, a kind of plate resistor is provided it is an object of the invention to overcome above-mentioned the deficiencies in the prior art place
Device, the chip resistor have lower resistance, higher power tolerance.
To achieve the above object, the technical solution used in the present invention is：A kind of chip resistor, including insulating substrate,
The upper surface of the insulating substrate is equipped with first resistor layer, and the lower surface of the insulating substrate is equipped with second resistance layer, and described the
The upper surface of the end of one resistive layer is equipped with a pair of of first electrode layer, and the lower surface of the end of the second resistance layer is equipped with a pair
The upper surface of the second electrode lay, the first resistor layer is covered with the first protective layer, the upper surface covering of first protective layer
There are the second protective layer, the lower surface of the second resistance layer to be covered with third protective layer, the lower surface of the third protective layer is covered
It is stamped the 4th protective layer；The first resistor layer and second resistance layer are alloy layers of foil.
Preferably, the alloy layers of foil is coated with copper on one side, and the first electrode layer and the second electrode lay be copper coating.
On the one hand plate resistor of the present invention can make the resistance value of product more by the design of the double-deck resistance, double shielding layer
It is low, power tolerance is more preferable, on the other hand, the environmental resistance ability of product can be made stronger, can be adapted for more occasions
Application.And by the way of being bonded after first copper facing, the alloy material that can not be bonded under normal condition is made to realize bonding.
Preferably, the insulating substrate is the aluminium nitride ceramics base of alumina ceramic substrate or surface deposition of aluminium oxide thin layer
Piece.The insulating substrate has preferable insulating properties and heat conductivity.
Preferably, the first resistor layer, second resistance layer are made of alloy material, and the alloy material closes for copper-manganese
In gold, monel, nichrome, dilval, copper-manganese tin alloy, manganese copper-nickel, ambrose alloy ferroalloy, nickel chromium triangle alusil alloy
One kind；The copper for being coated with 0.1-10um on one side of the first resistor layer, second resistance layer.The alloy material itself has low temperature
The characteristics of floating coefficient, high power factor, can be improved the thermal conductivity of alloy material after being bonded with insulating substrate, it is made to obtain bigger
Current carrying capability.
Preferably, the first resistor layer, second resistance layer copper-plating technique be sputtering, vapor deposition or plating.
Preferably, first protective layer, third protective layer are polyimide coating.
It is highly preferred that first protective layer, third protective layer be polyetherimide coating, polyamidoimide coating,
At least one of polybismaleimide coating.
It is highly preferred that first protective layer, third protective layer are polyetherimide coating.
Preferably, second protective layer, the 4th protective layer are made of epoxide resin material.
Alloy material in polyimide coating and resistive layer of the present invention has splendid combination, avoids such as epoxy resin or Asia
The protection materials such as gram force are susceptible to voiding problem when being combined with resistive layer, therefore have higher moisture-proof and corrosion resistance, so
One layer of epoxy resin protection is covered on polyimide coating afterwards, product acid resistance corrosive power can be further increased.
Preferably, the side of the insulating substrate is equipped with a pair of of end face electrode layer, the end electrode layer covering described the
The side of one electrode layer, the side of the first resistor layer, the side of the insulating substrate, the second resistance layer side and
The side of the second electrode lay.
Preferably, the side of the end electrode layer is equipped with a pair of external electrodes layer, described in external electrode layer covering
End electrode layer and at least partly cover second protective layer and the 4th protective layer.
Preferably, the first electrode layer, the second electrode lay material be copper.
Preferably, the material of the end electrode layer is nickel, and the material of the external electrode layer is tin.
The design of layers of copper electrode of the present invention mainly reduces the contact resistance resistance value in product Alloy Foil face, improves product resistance value
Measuring accuracy；Nickel layer electrode be intermediate buffer layer, tin layers electrode to other outer members weld.
Preferably, the first protection layer segment covers the first electrode layer, and the third protection layer segment covers institute
State the second electrode lay.This designs the effect that can preferably play protective layer, more fully protective resistance layer.
Meanwhile the present invention also provides a kind of preparation method of above-mentioned chip resistor, including the following steps：
(1) copper coating processing is carried out to the wherein one side of Alloy Foil layer；
(2) by high temperature bonding technology, alloy layers of foil has been carried out to the one side of copper coating processing, in the upper of insulating substrate
Surface and lower surface are bonded respectively；
(3) by photoetching process, mask pattern covering is carried out, then by chemical etching mode, forms first resistor
Layer, second resistance layer；
(4) by high speed electrodeposition technique, the lower surface in the upper surface and second resistance layer end face of first resistor layer end face
It is respectively formed first electrode layer, the second electrode lay；
(5) mechanical grinding is carried out to the resistive layer handled by step (4) and repaiies resistance；
(6) by thick film silk-screen technology, the first protection of upper surface printing of the first resistor layer after repairing resistance through step (5)
Layer prints third protective layer in the lower surface of second resistance layer；
(7) by thick film silk-screen technology, the second protective layer is printed in the upper surface of the first protective layer, in third protective layer
Print the 4th protective layer in lower surface；
(8) by magnetron vacuum sputtering technology, end is formed in the side of first electrode layer, the second electrode lay and insulating substrate
Face electrode layer；
(9) by electroplating technology, external electrode layer is formed in the side of the end electrode layer.
In the manufacturing method of the present invention, the photoetching process includes printing mask layer, exposure, development, removal mask layer
Deng chemical etching process includes liquid etching, vapor etch etc..Those skilled in the art can also have according to actual conditions
The selection of body.
Preferably, in the step (2), the technique of high temperature bonding is：Alloy layers of foil surface plating has been subjected to by high temperature
The one side of Copper treatment fixes on an insulating substrate, forms chemical bonding.
In the step (2), high temperature bonding technology the specific steps are：Surface degreasing, decontamination, pressurization are carried out to Alloy Foil
Leveling, mild corrosion processing, then keep flat Alloy Foil on an insulating substrate, then Alloy Foil and insulating substrate are put into togerther burning
It ties in container, sintering container is put into high temperature sintering furnace and is sintered, the temperature of sintering, which is 1065-1083 DEG C, (and to be passed through
0.1008%~0.139% oxygen, sintering process metal foil surface form copper oxide and are bonded with aluminium oxide reaction.).
Preferably, the high speed electrodeposition technique in the step (4) is rack plating.
Preferably, in the step (5), the lower surface of upper surface and/or second resistance layer at least to first resistor layer
Carry out mechanical grinding.
Preferably, in the step (5), it is single hole polishing or plural hole polishing that the mechanical grinding, which repaiies resistance,；The machinery
The depth of polishing is that polishing hole penetrates Alloy Foil exposing ceramic substrate or polishing Kong Wei penetrates Alloy Foil；The rail of the mechanical grinding
Mark is at least one of circular trace, elliptical path, track type track, rectangular path.
The detailed process that mechanical grinding in the step (5) repaiies resistance is：Resistance machine is repaiied using high-accuracy, product pan feeding makes
Polishing is carried out to first resistor layer with diamond frotton and repaiies resistance, is discharged after the completion, then pan feeding after product reversion, uses diamond
Frotton carries out polishing to second resistance layer and repaiies resistance, discharges after the completion.
In addition, the present invention also provides a kind of resistive elements of the chip resistor.
Compared with the existing technology, beneficial effects of the present invention are：
The present invention by the type selecting of alloy material, the double-deck resistive arrangement, high temperature bonding, double shielding design, high speed rack plating,
Machinery repaiies the importing of the techniques such as resistance, and resistance alloys layer temperature drift coefficient, power coefficient and power area is made to obtain best combination, with
The product of the prior art is compared, and temperature resistance floats ability and power tolerance higher, the long-time stability and environmental resistance of product
Property is more preferable.And by the way of being bonded after first copper facing, the alloy material that can not be bonded under normal condition is made to realize bonding.
The double-deck resistive arrangement of the present invention can make resistance value is minimum to accomplish 0.1m Ω, and the single layer resistance of the prior art is set
Meter, resistance value is minimum to can only achieve 1m Ω；The high temperature bonding techniques of the present invention, cooperative mechanical repair resistance, can be by product power
Highest is promoted to 5W, and ± 1% resistance value qualification rate highest can reach 90%, while under the high temperature energizing test of 1000h, resistance
Value change rate is can be controlled within ± 0.5%, and the fitting of the low temperature of the prior art and laser repair resistance, and product power only up to reach
To 3W, ± 1% resistance value qualification rate only up to be controlled 70%, and under the high temperature energizing test of 1000h, resistance varying-ratio is only
It can control within ± 1%；The double shielding design of the present invention, under the environmental corrosion resisting experimental condition of 1000h, change in resistance
Rate is can be controlled within ± 0.5%, and the single ply protective of the prior art designs, under the environmental corrosion resisting experimental condition of 1000h,
Resistance varying-ratio can only control within ± 1%.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of chip resistor of the present invention；
Fig. 2 is a kind of flow chart of the preparation method of chip resistor of the present invention；
Wherein, 1, insulating substrate；2, first resistor layer；3, second resistance layer；4, first electrode layer；5, the second electrode lay；
6, the first protective layer；7, third protective layer；8, the second protective layer；9, the 4th protective layer；10, end electrode layer；11, external electrode
Layer.
Specific implementation mode
To better illustrate the object, technical solutions and advantages of the present invention, below in conjunction with the drawings and specific embodiments pair
The present invention is described further, in addition, the selection of alloy material of the present invention, those skilled in the art can carry out as the case may be
Selection, no longer carries out enumerating selection, the plate resistor in further illustrating the present invention only by taking the present embodiment as an example herein one by one
The structure of device, the effect of preparation method and chip resistor.
In conjunction with attached drawing 1, chip resistor includes described in the present embodiment
Insulating substrate 1；The upper surface of insulating substrate 1 is equipped with first resistor layer 2, and the lower surface of insulating substrate 1 is equipped with second
The upper surface of resistive layer 3, the end of first resistor layer 2 is equipped with a pair of of first electrode layer 4, the following table of the end of second resistance layer 3
Face is equipped with a pair of of the second electrode lay 5, and the upper surface of first resistor layer 2 is covered with the first protective layer 6, the upper table of the first protective layer 6
Face is covered with the second protective layer 8, and the lower surface of second resistance layer 3 is covered with third protective layer 7, the lower surface of third protective layer 7
It is covered with the 4th protective layer 9,6 part of the first protective layer covers first electrode layer 4, and 7 part of third protective layer covers second electrode
Layer 5, the side of insulating substrate 1 are equipped with a pair of of end face electrode layer 10, and end electrode layer 10 covers the side of first electrode layer 4, the
The side of one resistive layer 2, the side of insulating substrate 1, second resistance layer 3 side and the second electrode lay 5 side；End electrode
The side of layer 10 is equipped with a pair of external electrodes layer 11, and external electrode layer 11 covers end face electrode layer 10 and at least partly covers second
Protective layer 8 and the 4th protective layer 9.
First resistor layer 2, second resistance layer 3 are made of alloy material, and the alloy material is manganin, ambrose alloy conjunction
One kind in gold, nichrome, dilval, copper-manganese tin alloy, manganese copper-nickel, ambrose alloy ferroalloy, nickel chromium triangle alusil alloy；The
One protective layer 6, third protective layer 7 are polyimide coating；Second protective layer 8, the 4th protective layer 9 are by epoxide resin material group
At；First electrode layer 4, the second electrode lay 5 material be copper, the material of end electrode layer 10 is nickel, external electrode layer 11
Material is tin.
In conjunction with attached drawing 2, the preparation method of chip resistor, includes the following steps in the present embodiment：
Step 1：Copper coating processing is carried out to the face to be bonded of two panels Alloy Foil, copper layer thickness is controlled in 0.1-10um；
Step 2：By the obverse and reverse of insulating substrate 1 respectively with the face to be bonded of two panels Alloy Foil at 1065-1083 DEG C
Under conditions of carry out high temperature bonding；
Step 3：Alloy Foil mask prints, and distinguishes printing lithographic mask slurry on two panels Alloy Foil surface, keeps Alloy Foil complete
Portion is covered by the mask, and is then formed by curing lithographic mask layer through 180-220 DEG C, as shown in Fig. 2 (a)；
Step 4：Alloy Foil mask exposure develops, and is exposed after being covered with figure egative film to the mask in two panels Alloy Foil
Then light is developed with sodium carbonate liquor again, after development as shown in Fig. 2 (b)；
Step 5：Alloy Foil etches and Alloy Foil mask demoulding, using liquor ferri trichloridi simultaneously in two panels Alloy Foil
It is not performed etching by the metal part that mask covers, cleaning demoulding then is carried out to Alloy Foil mask with sodium hydroxide again, formed
First resistor layer 2 and second resistance layer 3, as shown in Fig. 2 (c)；
Step 6：Copper mast printing is plated, respectively in first resistor layer 2 and 3 surface printing of second resistance layer mask capable of washing
Then slurry is formed by curing mask layer through 180-220 DEG C, as shown in Fig. 2 (d)；
Step 7：Rack plating copper and plating copper mast demoulding carry out high speed electrodeposition copper to the Alloy Foil part not covered by mask,
First electrode layer 4 and the second electrode lay 5 are formed, cleaning demoulding then is carried out to plating copper mast with sodium hydroxide, such as Fig. 2 (e) institutes
Show；
Step 8：Machinery repaiies resistance, and carrying out polishing to the resistive element adjustable part of upper and lower surface respectively with diamond frotton repaiies
Resistance, such as Fig. 2 (f) is shown after repairing resistance；
Step 9：Polyimides protection printing, polyimides slurry is printed on upper and lower surface resistive element, is then passed through respectively
180-220 DEG C of solidification, forms the first protective layer 6 and third protective layer 7, as shown in Fig. 2 (g)；
Step 10：Epoxy resin protection printing, epoxy resin slurry is printed on polyimide coating, is then passed through respectively
180-220 DEG C of solidification, forms the second protective layer 8 and the 4th protective layer 9, as shown in Fig. 2 (h)；
Step 11：Label print, the printing mark slurry on the epoxy resin protective layer of upper surface, then through 180-
220 DEG C are formed by curing mark layer, as shown in Fig. 2 (i)；
Step 12：Folding bar is divided product by bulk into strips, as shown in Fig. 2 (j) along the cut-off rule of X1；
Step 13：Side seal, leaching envelope silver paste or sputtered conductor metal, form end electrode layer 10 on strip-shaped product；
Step 14：Grain is rolled over, product is granulated along the cut-off rule of Y1 by strip segmentation, as shown in Fig. 2 (k)；
Step 15：Plating forms external electrode layer by granular product by plating on the surface of end electrode layer 10
11, play the role of solderable.
As a kind of specific embodiment of the present invention, another preparation method of chip resistor described in the present embodiment is such as
Under：
(1) face to be bonded of the copper sheet of two panels 150um thickness is subjected to copper plating treatment, copper layer thickness is controlled in 1-5um.
(2) by the aluminium oxide ceramic substrate of the face to be bonded of copper sheet and 0.4mm thickness at a high temperature of 1065~1083 DEG C into
Line unit closes, soaking time 30 minutes；
(3) printing lithographic mask, 120-250 mesh stainless steel cloths, automatic screen-printing machine printing, are dried for 10 minutes by 150 DEG C
It is dry；
(4) it exposes, photo etched mask is exposed with 320*620 figures, 5~12s of time for exposure；
(5) develop, developed to the photo etched mask after exposure with 0.1%-5% sodium carbonate liquors；
(6) it etches, the copper sheet after development is etched with 30%-70% liquor ferri trichloridis, form electrode and resistance
Then figure removes photo etched mask with 1%-10% sodium hydroxides；
(7) rack plating is first covered in resistance with photo etched mask, then carries out copper facing to electrode section, forms copper electrode.So
Remove photo etched mask with sodium hydroxide afterwards；
(8) machinery repaiies resistance, and carrying out polishing to the resistive element adjustable part of upper surface with diamond frotton repaiies resistance, resistance value control
In 0.1m Ω；
(9) polyimides protection printing, prints polyimides slurry on resistive element, then through 180-220 DEG C of solidification shape
At polyimide covercoat；
(10) epoxy resin protection printing, prints epoxy resin slurry, then through 180-220 DEG C on Kapton
It is formed by curing epoxy resin protective layer；
(11) label print, the printing mark slurry on the epoxy resin protective layer of upper surface are then solid through 180-220 DEG C
Change forms mark layer；
(12) finished product is completed in folding bar, side seal, folding grain, plating；
(13) braider braid test finished product resistance value (4000pcs) is used, ± 1% resistance value qualification rate is 92%.
(14) temperature-coefficient of electrical resistance (TCR) is arranged to test 80pcs points of sampling of finished product four groups (one group of 20pcs), 5W power
The environmental corrosion resisting experiment of experiment, the high temperature energizing test of 1000h and 1000h show that TCR values are 25-38ppm；5W power
Maximum value change rate is 0.13% after experiment；Maximum value change rate is 0.25% after the high temperature energizing test of 1000h；
Maximum value change rate is 0.15% after the environmental corrosion resisting experiment of 1000h.
The double-deck resistive arrangement of the present invention can make resistance value is minimum to accomplish 0.1m Ω, and the single layer resistance of the prior art is set
Meter, resistance value is minimum to can only achieve 1m Ω；The high temperature bonding techniques of the present invention, cooperative mechanical repair resistance, can be by product power
Highest is promoted to 5W, and ± 1% resistance value qualification rate highest can reach 90%, while under the high temperature energizing test of 1000h, resistance
Value change rate is can be controlled within ± 0.5%, and the fitting of the low temperature of the prior art and laser repair resistance, and product power only up to reach
To 3W, ± 1% resistance value qualification rate only up to be controlled 70%, and under the high temperature energizing test of 1000h, resistance varying-ratio is only
It can control within ± 1%；The double shielding design of the present invention, under the environmental corrosion resisting experimental condition of 1000h, change in resistance
Rate is can be controlled within ± 0.5%, and the single ply protective of the prior art designs, under the environmental corrosion resisting experimental condition of 1000h,
Resistance varying-ratio can only control within ± 1%.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than is protected to the present invention
The limitation of range is protected, although being explained in detail to the present invention with reference to preferred embodiment, those skilled in the art should
Understand, technical scheme of the present invention can be modified or replaced equivalently, without departing from the essence of technical solution of the present invention
And range.
Claims (10)
1. a kind of chip resistor, which is characterized in that including insulating substrate, the upper surface of the insulating substrate is equipped with first resistor
Layer, the lower surface of the insulating substrate are equipped with second resistance layer, and the upper surface of the end of the first resistor layer is equipped with a pair of the
The lower surface of one electrode layer, the end of the second resistance layer is equipped with a pair of of the second electrode lay, the upper table of the first resistor layer
Face is covered with the first protective layer, and the upper surface of first protective layer is covered with the second protective layer, under the second resistance layer
Surface is covered with third protective layer, and the lower surface of the third protective layer is covered with the 4th protective layer；The first resistor layer and
Second resistance layer is alloy layers of foil.
2. chip resistor as described in claim 1, which is characterized in that the insulating substrate is alumina ceramic substrate or table
Face deposits the aluminium nitride ceramic substrate for having alumina flake.
3. chip resistor as described in claim 1, which is characterized in that the first resistor layer, second resistance layer are by conjunction
Golden material composition, the alloy material are manganin, monel, nichrome, dilval, copper-manganese tin alloy, copper-manganese
One kind in nickel alloy, ambrose alloy ferroalloy, nickel chromium triangle alusil alloy；The first resistor layer, second resistance layer are coated on one side
The copper of 0.1-10um.
4. chip resistor as described in claim 1, which is characterized in that first protective layer, third protective layer are polyamides
Imines coating.
5. chip resistor as claimed in claim 4, which is characterized in that first protective layer, third protective layer are polyethers
At least one of acid imide coating, polyamidoimide coating, polybismaleimide coating.
6. a kind of preparation method of the chip resistor as described in any one of Claims 1 to 5, which is characterized in that including walking as follows
Suddenly：
(1) copper coating processing is carried out to the wherein one side of Alloy Foil layer；
(2) by high temperature bonding technology, alloy layers of foil has been carried out to the one side of copper coating processing, the upper surface with insulating substrate
It is bonded respectively with lower surface；
(3) by photoetching process, mask pattern covering is carried out, then by chemical etching mode, forms first resistor layer, the
Two resistive layers；
(4) by high speed electrodeposition technique, distinguish in the upper surface of first resistor layer end face and the lower surface of second resistance layer end face
Form first electrode layer, the second electrode lay；
(5) mechanical grinding is carried out to the resistive layer handled by step (4) and repaiies resistance；
(6) by thick film silk-screen technology, the first protective layer is printed in the upper surface of the first resistor layer after repairing resistance through step (5),
Third protective layer is printed in the lower surface of second resistance value；
(7) by thick film silk-screen technology, the second protective layer is printed in the upper surface of the first protective layer, in the following table of third protective layer
Print the 4th protective layer in face；
(8) by magnetron vacuum sputtering technology, end face electricity is formed in the side of first electrode layer, the second electrode lay and insulating substrate
Pole layer；
(9) by electroplating technology, external electrode layer is formed in the side of the end electrode layer.
7. a kind of resistive element comprising such as Claims 1 to 5 any one of them chip resistor.
8. the preparation method of chip resistor as claimed in claim 6, which is characterized in that in the step (2), high temperature bonding
Technique be：Alloy layers of foil has been carried out to the one side of copper coating processing by high temperature, has fixed on an insulating substrate, forms chemistry
Bonding.
9. the preparation method of chip resistor as claimed in claim 6, which is characterized in that in the step (5), at least to
The upper surface of one resistive layer and/or the lower surface of second resistance layer carry out mechanical grinding.
10. the preparation method of chip resistor as claimed in claim 6, which is characterized in that in the step (5), the machine
It is single hole polishing or plural hole polishing that resistance is repaiied in tool polishing；The depth of the mechanical grinding is that polishing hole penetrates Alloy Foil exposing ceramics
Substrate or polishing Kong Wei penetrate Alloy Foil；The track of the mechanical grinding be circular trace, elliptical path, track type track,
At least one of rectangular path.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810296003.2A CN108666057B (en) | 2018-04-03 | 2018-04-03 | Chip resistor and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810296003.2A CN108666057B (en) | 2018-04-03 | 2018-04-03 | Chip resistor and preparation method thereof |
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| CN108666057B CN108666057B (en) | 2024-04-30 |
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|---|---|---|---|
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| CN110459373A (en) * | 2019-08-19 | 2019-11-15 | 南京隆特电子有限公司 | A kind of low-resistance resistor and manufacturing method |
| CN110660551A (en) * | 2019-09-20 | 2020-01-07 | 丽智电子（南通）有限公司 | Method for manufacturing alloy plate metal resistor for electronic product |
| CN111030640A (en) * | 2019-12-27 | 2020-04-17 | 苏州市新诚氏通讯电子股份有限公司 | Surface-mounted miniature superposed circuit attenuation sheet and preparation method thereof |
| CN111733418A (en) * | 2020-06-30 | 2020-10-02 | 苏州蓝晶研材料科技有限公司 | Ceramic conductive material containing alloy layer and preparation method thereof |
| CN111766412A (en) * | 2019-04-02 | 2020-10-13 | 光颉科技股份有限公司 | Four-terminal resistor |
| CN112185637A (en) * | 2020-09-02 | 2021-01-05 | 广东风华高新科技股份有限公司 | Manufacturing method of direct-insertion type precision network resistor and resistor |
| CN114823020A (en) * | 2022-05-23 | 2022-07-29 | 贝迪斯电子有限公司 | Anti-surge chip resistor and manufacturing method thereof |
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