CN213366293U - Subminiature thick-film anti-vulcanization chip resistor - Google Patents
Subminiature thick-film anti-vulcanization chip resistor Download PDFInfo
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- CN213366293U CN213366293U CN202022496730.9U CN202022496730U CN213366293U CN 213366293 U CN213366293 U CN 213366293U CN 202022496730 U CN202022496730 U CN 202022496730U CN 213366293 U CN213366293 U CN 213366293U
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Abstract
A subminiature thick-film anti-vulcanization chip resistor is characterized in that a back electrode (3) is printed on the back of an insulating smooth white substrate (1), a side electrode (10) is printed on the side face of the insulating smooth white substrate (1), a resistance layer (5) is arranged in the middle of the front face of the insulating smooth white substrate (1), a first front electrode (2) is printed on the front edge of the insulating smooth white substrate (1) outside the resistance layer (5), a first protection layer (6) is arranged on the upper side of the resistance layer (5), a second protection layer (7) is arranged on the surface of the first protection layer (6), a second front electrode (4) is arranged on the upper side of the first front electrode (2), and the second front electrode (4) is in lap joint with the second protection layer (7; the surfaces of the back electrode (3), the second front electrode (4) and the side electrode (10) are provided with a nickel plating layer (8), and the surface of the nickel plating layer (8) is provided with a tin plating layer (9). The first front electrode (2) adopts silver-palladium slurry to slow down the reaction of silver and sulfur, and the second front electrode (4) and the second protective layer (7) are in lap joint to prolong the vulcanization path, so that the vulcanization resistance of the chip resistor is improved.
Description
Technical Field
The utility model relates to an anti-vulcanization chip resistor's institutional advancement technique, especially subminiature thick film anti-vulcanization chip resistor.
Background
A Chip Resistor (SMD Resistor), also known as a Chip Fixed Resistor, is one of the metal glass enamel resistors. The resistor is manufactured by mixing metal powder and glass glaze powder and printing the mixture on a substrate by a screen printing method.
Thick film circuits differ from thin film circuits by two points: one is the difference in film thickness, the thick film circuit generally has a film thickness greater than 10 μm, and the thin film has a film thickness less than 10 μm, mostly less than 1 μm; the other is the difference of the manufacturing process, the thick film circuit generally adopts the screen printing process, and the thin film circuit adopts the process methods such as vacuum evaporation, magnetron sputtering and the like.
A thick film integrated circuit is an integrated circuit formed by adding a device such as a crystal diode, a transistor, a resistor, or a semiconductor integrated circuit to an insulating material such as a ceramic sheet or glass, and is generally used in a switching power supply circuit of a television or a power amplifier circuit of an acoustic system.
The common small-specification chip resistor has the advantages of small product volume, light weight, suitability for reflow soldering, easiness in mounting, matching with automatic mounting equipment and low assembly cost, can be widely applied to communication products such as various electrical appliances, personal data storage, mobile phones and the like, and promotes the further miniaturization of electronic products.
The super-small-size resistor is widely applied to the fields of computers, mobile phones, electronic dictionaries, medical electronic products, video cameras, electronic watt-hour meters, VCD (video recorder) and the like. However, in some cases where the concentration of the sulfur gas is high, such as volcanic gas emission places, farms, wine brewing, parking lots, chemical plants, mining industries, thermal power plants, and the like, electronic devices using the chip resistors often generate a sulfur reaction to open the resistors.
The common chip resistor manufacturing method is used for producing resistor products with smaller specifications and vulcanization resistance, and the production mode has the following defects:
1) the precision of a common printing machine is not enough to print the subminiature resistor;
2) if the ultra-small-specification chip resistor is printed by selecting a film layer, the defects of irregular granular film layer, uneven surface, uneven film layer thickness, poor consistency of initial resistance RO (reverse osmosis) values and the like can occur, the product yield can be directly influenced, the material resource waste is caused, and the manufacturing cost is raised;
3) the common chip resistor is not enough to resist sulfur, and the chip resistor fails when the concentration of the sulfuration gas is high.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an anti vulcanization chip resistor of subminiature thick film solves above technical problem, and the extension vulcanizes the route, improves chip resistor's anti vulcanization performance.
The purpose of the utility model is realized by the following technical measures: printing a back electrode on the back of the insulating smooth white substrate, printing a side electrode on the side surface of the insulating smooth white substrate, arranging a resistance layer in the middle of the front surface of the insulating smooth white substrate, printing a first front electrode on the front edge of the insulating smooth white substrate outside the resistance layer, meanwhile, arranging a first protection layer on the upper side of the resistance layer, arranging a second protection layer on the surface of the first protection layer, arranging a second front electrode on the upper side of the first front electrode, and overlapping the second front electrode with the second protection layer; the surfaces of the back electrode, the second front electrode and the side electrode are provided with nickel coatings, and the surfaces of the nickel coatings are provided with tin coatings.
In particular, the insulating smooth white substrate back side edge is printed with a back electrode.
In particular, side electrodes are printed around the four sides of the insulating smooth white substrate.
In particular, the second front electrode edge is laminated on the second protective layer edge, the second front electrode (4) is completely laminated on the first front electrode (2), and the first front electrode (2) edge is laminated on the resistive layer (5) edge.
In particular, the nickel plating layer and the tin plating layer completely cover the exposed surfaces of the first front electrode, the back electrode, the second front electrode, and the side electrodes.
Particularly, the first front electrode is flanged and extends to cover the upper part of the side face of the insulating smooth white substrate, the back electrode is flanged and extends to cover the lower part of the side face of the insulating smooth white substrate, and the upper edge and the lower edge of the side electrode are overlapped and pressed on the flanged and extended parts of the first front electrode and the back electrode on the side face of the insulating smooth white substrate.
In particular, the second protective layer covers an area larger than the first protective layer and the resistive layer.
In particular, the coefficient of expansion of the second protective layer is matched to the coefficient of expansion of the second front electrode.
The utility model discloses an advantage and effect: a second front electrode is additionally arranged on the first front electrode to form an overlapping structure of the second front electrode and a second protective layer as well as the second front electrode and the first front electrode; the specific overlapping structure comprises a first front electrode, a second front electrode, a first protective layer, a second protective layer and a second protective layer, wherein the first front electrode is extended to completely cover the first front electrode; by the overlapping structure, the aim of greatly prolonging the vulcanization path is fulfilled, so that the vulcanization resistance of the chip resistor is improved; compared with the structure of the thick film chip resistor in the prior art, the structure has the advantages of regular granular resistance film layer, smooth surface, uniform film layer thickness, remarkable saving of circuit space, more refined support design, good consistency of initial resistance RO value, moisture resistance, high temperature resistance and small temperature coefficient. The vulcanization resistance effect is optimized, the production quality of the chip resistor is effectively improved, the yield of the product is greatly improved to a certain extent, and the manufacturing cost is saved.
Drawings
Fig. 1 is a schematic structural diagram of embodiment 1 of the present invention.
The reference numerals include:
1-insulating smooth white substrate, 2-first front electrode, 3-back electrode, 4-second front electrode, 5-resistance layer, 6-first protective layer, 7-second protective layer, 8-nickel plating layer, 9-tin plating layer and 10-side electrode.
Detailed Description
The utility model discloses the principle lies in, for solving above-mentioned technical problem, is suitable for the structure that adopts the small dimension chip resistor who sweeps ink technology production through the improvement, makes ordinary chip resistor have good anti vulcanization effect, overcomes prior art problem, realizes the utility model target.
The present invention will be further explained with reference to the drawings and examples.
Example 1: as shown in figure 1, a small-sized chip resistor produced by adopting an ink sweeping process comprises an insulating smooth white substrate 1, a frame line and an auxiliary line are engraved on the front surface of the insulating smooth white substrate 1 by taking the using direction as a reference, a broken grain line and an alignment line are engraved on the back surface of the insulating smooth white substrate 1 by adopting a high-precision special printer, a back electrode 3 is printed on the back surface of the insulating smooth white substrate 1, a strip-shaped resistor layer 5 is printed on the front surface of the insulating smooth white substrate 1, then ink sweeping is carried out along the broken grain line direction by using laser to form granules, a strip-shaped front electrode layer 5 which is overlapped with two ends of the resistor layer 5 is printed on the front surface of the insulating smooth white substrate 1, then the ink sweeping is carried out along the broken grain line direction by using the laser to form granules, a front electrode layer paste of a first front electrode 2 adopts a silver-palladium-containing slurry, the reaction of silver and sulfide is slowed mainly by palladium, then, a first protective layer 6 which has protective effect on the resistance layer 5 is covered on the resistance layer 5, after laser cutting, the expected resistance value can be reached, a second protective layer 7 is covered on the first protective layer 6, mainly to prevent the resistance value from shifting after cutting, in order to make the thickness of the sputtering layer uniform, a second front electrode 4 is printed on the front electrode, mainly to prevent the seesaw shape generated after the second protective layer is printed in the subminiature 01005 resistor during sputtering, if the second front electrode 4 layer does not exist, the sputtering layer is too deep to cause serious poor appearance, and the expansion coefficient of the second protective layer 7 is matched with the expansion coefficient of the second front electrode 4, therefore, when the chip resistor is welded on a PCB board by wave crest soldering or reflow soldering, namely in the temperature changing process, the expansion and contraction of the second protective layer 7 are consistent with the expansion and contraction of the second front electrode 4, the phenomenon that sulfuration gas corrodes the electrodes due to cracks of the nickel plating layer 8, the tin plating layer 9 and the second protection layer 7 caused by different expansion coefficients of materials when the chip resistor is subjected to wave crest soldering or reflow soldering of a PCB (printed circuit board) can be effectively avoided.
In the foregoing, it has one deck side electrode 10 to cover respectively on the terminal surface at insulating polished surface white base plate 1 both ends, side electrode 10 extends to cover the front electrode dorsad the terminal surface of the one end of resistance layer, and extend to cover first front electrode 2, the 4 front electrodes of second front electrode dorsad the terminal surface of the one end of first protection layer 6, and extend to cover back electrode 3 dorsad the terminal surface of the one end at insulating polished surface white base plate 1 middle part.
In the foregoing, the front electrodes, that is, the first front electrode 2 and the second front electrode 4, the side electrodes 10 and the back electrode 3 are covered with a nickel plating layer 8, the nickel plating layer 8 completely covers the front electrodes, the side electrodes 10 and the back electrode 3, and the nickel plating layer 8 is overlapped on the end face of the second protection layer 7; the nickel plating layer 8 is covered with a tin plating layer 9, the tin plating layer 9 completely covers the nickel plating layer 8, and the tin plating layer 9 is lapped on the end face of the second protection layer 7.
In the foregoing, the expansion coefficient of the second protective layer 7 matches the expansion coefficient of the second front electrode 4.
In the embodiment of the utility model, the resistance layer 5 and the first front electrode are produced by adopting a printing ink sweeping mode, and the material is a silver paste material with 0.1% -18% palladium content; silver paste material with palladium content of 0.1% -18% is adopted for the first front electrode 2, so that the reaction of silver and sulfide in the first front electrode 2 is effectively slowed down, and short circuit of the chip resistor is caused; and the material of the second front electrode 4 layer is resin silver, the resin silver has excellent silver powder arrangement effect, and the expansion coefficient of the second protection layer 7 is matched with that of the second front electrode 4. The phenomenon that sulfuration gas corrodes electrodes due to cracks of the electroplated nickel layer, the electroplated tin layer and the second protective layer caused by different expansion coefficients of materials when the chip resistor is subjected to wave crest soldering or reflow soldering of a PCB is avoided. The utility model discloses during chip resistor, the insulating material of second protective layer 7 is resin paste, and the electrode material of second positive electrode 4 is special low temperature resin silver thick liquid, and the expansion coefficient of this low temperature resin silver thick liquid is complete matching with resin paste's expansion coefficient, and this electroplated nickel layer and the electrotinning layer that has just avoided the resistor to exist when PCB board crest soldering or reflow soldering completely appear the crack because of the material expansion coefficient difference with second protective layer 7, cause the phenomenon of sulfuration gas corrosion electrode.
In the embodiment of the present invention, preferably, the one-layer second front electrode 4 is added in the design, and when sputtering is reduced, the appearance of the seesaw shape generated after printing the second protection layer 7 in the subminiature 01005 resistor results in too deep sputtering layer if no second front electrode 4, which causes bad appearance.
The embodiment of the utility model provides an in, during the manufacturing to the direction of use is the benchmark, and its manufacturing step includes:
a. preparing an insulating plain white substrate 1;
b. the front surface of the insulating smooth white substrate 1 is edged with frame lines and auxiliary lines;
c. the back of the insulating smooth white substrate 1 is carved with folding lines, folding grain lines and alignment lines;
d. removing the white edge of the scribed insulating smooth white substrate 1, and cleaning the scribed substrate by using an ultrasonic cleaner;
e. back printing a back electrode 3 of the scribed insulating smooth white substrate 1, wherein the back electrode 3 is positioned on a transverse scribing line between the longitudinal scribing line and the through holes close to the longitudinal scribing line and on the transverse scribing line between the through holes;
f. printing a strip-shaped resistance layer 5 on the front surface of the scribed insulating smooth white substrate 1, and then drying;
g. cutting the strip-shaped resistance layer 5 into particles along the particle folding line direction by laser;
h. printing a strip-shaped first front electrode 2 on the front surface of the insulating smooth white substrate 1 after scribing, cutting the strip-shaped first front electrode 2 into granules along the granule folding line direction by using laser after drying, and co-firing the granules and a granular resistance layer 5;
i. printing transversely between the resistance layers 5 of the scribed insulating smooth white substrate 1 and on the resistance layers 5 to form a first protective layer 6, drying and then sintering;
j. using a laser machine to adjust the resistance values of the resistance layers 5 and the first protection layer 6 of the scribed insulating smooth white substrate 1 through laser, and generating cutting lines to correct the resistance values to required resistance values;
k. printing a second protective layer 7 on each first protective layer 6 of the scribed insulating smooth white substrate 1 to protect the resistor layer 5 and the cutting lines, and drying and sintering the second protective layers 6 after drying;
printing a layer of second front electrode 4 on the first front electrode 2 of the scribed insulating smooth white substrate 1, drying the second front electrode 4, and then sintering;
m, breaking the scribed insulating smooth white substrate 1 into strip-shaped substrates by a transverse scribing line on the scribed insulating smooth white substrate 1, and stacking the strip-shaped substrates into a jig through a special machine;
n, carrying out side sputtering on each strip-shaped substrate by using a vacuum sputtering furnace to form a side conductive layer 10;
o, breaking each strip-shaped substrate along the longitudinal score line to form an independent ink-sweeping semi-finished product;
p, putting the semi-finished resistor into an electroplating roller of an electroplating bath, rotating the electroplating roller at a set speed, forming a nickel coating 8 on the front electrode layer 2, the second front electrode 4, the back electrode 3 and the side electrode 10 of the semi-finished resistor under the conditions of set current and time, then electroplating a tin coating 9 on the surface of the nickel coating 8, and cleaning and drying to form the resistor product adopting the ink sweeping technology.
Claims (8)
1. The subminiature thick-film anti-vulcanization chip resistor is characterized in that a back electrode (3) is printed on the back of an insulating smooth white substrate (1), a side electrode (10) is printed on the side face of the insulating smooth white substrate (1), a resistance layer (5) is arranged in the middle of the front face of the insulating smooth white substrate (1), a first front electrode (2) is printed on the edge of the front face of the insulating smooth white substrate (1) on the outer side of the resistance layer (5), meanwhile, a first protection layer (6) is arranged on the upper side of the resistance layer (5), a second protection layer (7) is arranged on the surface of the first protection layer (6), a second front electrode (4) is arranged on the upper side of the first front electrode (2), and the second front electrode is in lap joint with the second protection; the surfaces of the back electrode (3), the second front electrode (4) and the side electrode (10) are provided with a nickel plating layer (8), and the surface of the nickel plating layer (8) is provided with a tin plating layer (9).
2. A subminiature thick-film anti-sulfuration chip resistor according to claim 1, wherein the rear electrode (3) is printed on the rear edge of the insulating smooth white substrate (1).
3. A subminiature thick-film anti-sulfuration chip resistor according to claim 1, wherein the side electrodes (10) are printed around four sides of the insulating plain white substrate (1).
4. The subminiature thick-film sulfuration-resistant chip resistor of claim 1, wherein the second front electrode (4) is laminated on the second protective layer (7) at an edge thereof, the second front electrode (4) is completely laminated on the first front electrode (2), and the first front electrode (2) is laminated on the resistive layer (5) at an edge thereof.
5. The subminiature thick-film sulfuration-resistant chip resistor according to claim 1, wherein the nickel plating layer (8) and the tin plating layer (9) completely cover the exposed surfaces of the first front electrode (2), the back electrode (3), the second front electrode (4), and the side electrodes (10).
6. The subminiature thick-film anti-sulfuration chip resistor of claim 1, wherein the first front electrode (2) is flanged and extended over the upper portion of the side surface of the insulating smooth white substrate (1), the back electrode (3) is flanged and extended over the lower portion of the side surface of the insulating smooth white substrate (1), and the upper and lower edges of the side electrode (10) are laminated on the flanged and extended portions of the first front electrode (2) and the back electrode (3) on the side surface of the insulating smooth white substrate (1).
7. A subminiature thick-film sulfuration-resistant chip resistor according to claim 1, wherein the second protective layer (7) covers an area larger than the areas covered by the first protective layer (6) and the resistive layer (5).
8. Subminiature thick-film sulfuration-resistant chip resistor according to claim 1, wherein the coefficient of expansion of the second protective layer (7) is matched to the coefficient of expansion of the second front electrode (4).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202022496730.9U CN213366293U (en) | 2020-11-02 | 2020-11-02 | Subminiature thick-film anti-vulcanization chip resistor |
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| CN202022496730.9U CN213366293U (en) | 2020-11-02 | 2020-11-02 | Subminiature thick-film anti-vulcanization chip resistor |
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| CN213366293U true CN213366293U (en) | 2021-06-04 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113972045A (en) * | 2021-10-26 | 2022-01-25 | 江西昶龙科技有限公司 | Method for preparing anti-vulcanization thick film chip resistor |
| CN115972748A (en) * | 2022-10-22 | 2023-04-18 | 徐州智兴电子科技有限公司 | Screen printing plate |
-
2020
- 2020-11-02 CN CN202022496730.9U patent/CN213366293U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113972045A (en) * | 2021-10-26 | 2022-01-25 | 江西昶龙科技有限公司 | Method for preparing anti-vulcanization thick film chip resistor |
| CN113972045B (en) * | 2021-10-26 | 2023-11-03 | 江西昶龙科技有限公司 | Method for preparing anti-vulcanization thick film wafer resistor |
| CN115972748A (en) * | 2022-10-22 | 2023-04-18 | 徐州智兴电子科技有限公司 | Screen printing plate |
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