CN107331486A - sulfuration resistant resistor and preparation method thereof - Google Patents
sulfuration resistant resistor and preparation method thereof Download PDFInfo
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- CN107331486A CN107331486A CN201710508430.8A CN201710508430A CN107331486A CN 107331486 A CN107331486 A CN 107331486A CN 201710508430 A CN201710508430 A CN 201710508430A CN 107331486 A CN107331486 A CN 107331486A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/032—Housing; Enclosing; Embedding; Filling the housing or enclosure plural layers surrounding the resistive element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
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Abstract
The invention provides sulfuration resistant resistor and preparation method thereof.The method of the invention includes following steps：One layer of conductor electrode layer with sulfuration resistant ability is formed on ceramic insulating substrate；One layer of welding electrode layer is formed at the conductor electrode layer back side；The resistive element of one layer of overlap joint is formed in the middle of conductor electrode layer two ends；In resistive element superimposed thereon one layer of protective glass of formation；Resistive element and protective glass are cut through using the mode of laser cutting, the purpose for trimming resistance is reached；To forming one layer of encapsulating material on the revised resistive element of laser and protective glass；In one layer of splash-proofing sputtering metal layer of resistance body side surface formation；Layer of metal barrier layer and layer of metal weld layer are deposited on exposed metal using the mode of electro-deposition.Sulfuration resistant resistor of the present invention can normally be used for a long time in high-sulfurized substance environment, can meet the application in adverse circumstances.
Description
Technical field
The present invention relates to electronic component field, it can be grown in high density sulfides environment in particular to one kind
Phase, the sulfuration resistant resistor with sulfuration resistant ability stably used and preparation method thereof.More specifically, the present invention relates to one kind
Electrode is made with Au, one layer of resistive layer, the side metal electricity positioned at its two ends are formed on 96% alumina insulation ceramic substrate
Pole, and the external coating being covered on resistive layer the chip fixed resister with sulfuration resistant performance, pass through surface mount
Mode weld on circuit boards, turning circuit plays partial pressure, metering function.
Background technology
Chip resistor is also known as surface mount electrical resistor, similar with other chip components and parts (SMC and SMD), is a kind of suitable
A new generation for surface mounting technology (SMT) is without lead or short leg miniature electronic part, and the solder side of its exit is same
In one plane.Chip film resistor is one kind of chip electronic component, its by alumina ceramic material as carrier, and carry
The system resistance slurry such as conducting electrons slurry, ruthenium-oxide is set to be molded on ceramic substrate by way of silk-screen printing on body, so
Final strong bond is on ceramic substrate in the way of high temperature sintering afterwards, or by resistor material by the way of magnetron sputtering
Nichrome etc. is deposited with physics state on ceramic substrate, the chip film resistor formed.
The surface electrode and backplate of common chip film fixed resister use noble silver electric slurry, and pass through
The mode of silk-screen printing forms conductive film layer, connection resistive layer and external circuit on a ceramic substrate.Although conventional resistor
In surface containment protection film layer to completely cut off air, and by way of forming plating film layer metallizing with protective resistance body not by
The influence of external environment condition.But, with the deterioration of chip film fixed resister use environment, stink damp is known from experience by encapsulating material
Cavity, gap, protective coating gap etc. are progressed into inside resistor present on material, and corrosion, shape are caused to silver surface electrode
Into non-conductive, short texture silver sulfide.Chip resistor electrode part is gradually corroded, cause resistor resistance drift about or
The problem of open circuit.
In view of this, it is special to propose the present invention.
The content of the invention
The first object of the present invention is to provide a kind of sulfuration resistant resistor, and sulfuration resistant resistor of the present invention is to be difficult to vulcanize
Gold be conductive electrode material, thus with good electric conductivity and stable chemical property, so as to effectively prevent ring
Sulfide and fundamentally solves existing resistor because silver electrode vulcanizes and causes for the corrosion of electrode material in border
The situation of chip resistor open circuit.
The second object of the present invention is to provide a kind of preparation method of described sulfuration resistant resistor, the inventive method
In, by the method for silk-screen printing on the non-cutting face of substrate printed electrode structure, traditional electrode printing process institute can be avoided
The phenomenons such as caused electrode connection and resistive element short circuit.
Third object of the present invention is to provide a kind of electronic component for including sulfuration resistant resistor of the present invention.
In order to realize the above-mentioned purpose of the present invention, spy uses following technical scheme：
A kind of sulfuration resistant resistor, the sulfuration resistant chip thick film fixed resister include substrate, electrode, resistive element and
Protective coating；Wherein, the electrode includes internal electrode, target and the outer electrode set gradually；The internal electricity
Pole includes being arranged at the surface electrode at substrate surface two ends, being arranged at the backplate of substrate back, and is arranged at substrate side
Face is used for connection surface electrode and the side electrode of backplate；The resistive element is arranged at substrate surface, its two ends and surface
Electrode is connected；The protective coating is arranged at resistive element surface；Wherein, the surface electrode is gold electrode.
Optionally, in the present invention, the protective coating includes being directly arranged at the glass protection coating of resistive element upper surface,
And it is arranged at encapsulated layer or protective glass coating outside glass protection coating；It is preferred that, the encapsulated layer is epoxy resin bag
Sealing；It is preferred that, the glass protection coating is acid resistance glassivation.
Optionally, in the present invention, the target is nickel electrode；And/or, the outer electrode is tin electrode.
Optionally, in the present invention, the backplate is silver electrode；And/or, the side electrode is nichrome electricity
Pole.
Optionally, in the present invention, the sulfuration resistant resistor is electrically connected by surface mount with circuit.
Meanwhile, present invention also offers the preparation method of the sulfuration resistant resistor, methods described comprises the following steps：
The two ends printing surface electrode of the upper surface of substrate along its length, in the lower surface printed back electrode of substrate；Pass through silk screen
Printing or magnetron sputtering formation resistive element, and cover the region between surface electrode；On resistive element surface protection is formed by printing
Coating；By substrate jackknifing in the width direction, the side of the ceramic substrate after jackknifing separation passes through magnetron sputtering formation side electricity
Pole, with communicating surface electrode and backplate；Internally electrode outer surface sequentially forms target and outside by deposition
Electrode.
Optionally, in the present invention, the substrate is ceramic substrate, and is provided with jackknifing cutting；It is preferred that, the ceramic base
Plate is aluminium oxide ceramic substrate.
Optionally, in the present invention, the resistive element surface forms protective coating by printing and comprised the following steps：First,
By being printed on resistance external surface formation glassivation；Then, the resistance to resistive element is modified；Again revised
Resistive element surface forms encapsulated layer or protective glass layers by printing；It is preferred that, the resistance to resistive element be modified for
Resistance to resistive element by the way of laser cutting is modified, to reach desired value.
Optionally, in the present invention, methods described also includes that the secondary jackknifing of substrate of side electrode will be formed, and obtains single
The step of resistor semi.
Further, present invention also offers the electronic device for including the sulfuration resistant resistor.
Compared with prior art, beneficial effects of the present invention are：
(1) sulfuration resistant chip film resistor of the present invention is using gold as internal electrode material, so as to improve resistor electrode
The performance of material halophile corrosion；
(2) by widening secondary encapsulating in the present invention, so as to improve protective coating for resistive element and electrode part
Protected area, and improve protective effect；
(3) in the present invention, by setting target and outer electrode, and adjustment to its material and depositing operation and
Optimization, so as to enhance the protective effect to electrode part；
(4) side nickel chromium triangle electrode is deposited in substrate side surfaces by using the mode of sputter coating, so as to improve side electricity
The decay resistance of pole, and reduce the production cost of side electrode, it is ensured that product batches property amount uniformity.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described.
The sulfuration resistant resistor structure chart that Fig. 1 is provided by embodiment 1；
Fig. 2 is that sample soaks product appearance pattern after 47 days in sodium sulfide solution；
Fig. 3 is that sulfuration resistant resistor vulcanization environment stores 47 days Sample Scan electrode detection figures；
Fig. 4 is that sulfuration resistant resistor vulcanization environment stores 47 days sample spectroscopy detection figures；
Fig. 5 is that common chip thick-film resistor vulcanization environment stores 47 days Sample Scan electrode detection figures；
Fig. 6 is that common chip thick-film resistor vulcanization environment stores 47 days sample spectroscopy detection figures；
Wherein, in Fig. 1,1- substrates, 2- resistive elements, 3- protective coatings, 4- internal electrodes, 5- targets, 6- external electricals
Pole.
Embodiment
Embodiment of the present invention is described in detail below in conjunction with embodiment, but those skilled in the art will
Understand, the following example is merely to illustrate the present invention, and is not construed as limiting the scope of the present invention.It is unreceipted specific in embodiment
Condition person, the condition advised according to normal condition or manufacturer is carried out.Agents useful for same or the unreceipted production firm person of instrument, be
The conventional products that can be obtained by commercially available purchase.
In view of current silver electrode material resistor exists and is easy to the thing sulfidation corrosion that cures, so as to cause plate resistor
The phenomenon of open circuit occurs for device, and the present invention is improved in terms of material, technique to existing resistor, specifically, of the invention
Sulfuration resistant resistor includes substrate, electrode, resistive element and protective coating；
In a preferred scheme of the invention, electrode is divided into the three-layered node of internal electrode, target, outer electrode
Structure；Further, internal electrode also includes surface electrode, backplate and side electrode；
Surface electrode can play the work of turning circuit as resistance body portion and the conductive connected component of the external circuit board
With.Common chip resistor is using argent as electrode material, so as to utilize the silver-colored good electric conductivity having and its
In process of production compared to the more excellent antioxygen gas corrosion ability having for copper, and to compare other expensive for production cost
The less expensive characteristic of metal.But, Yin Yi reacts with sulfide, and during resistor use, sulfide passes through outside
Protective layer enters resistive element electrode part and silver and reacted generation silver sulfide, and chip resistor can be caused to occur open circuit.This hair
Bright middle use noble metal gold is as surface electrode material, and golden chemical property is stable, all very steady in oxygen and vulcanization substance environment
It is fixed, even if, so overcoming the defect of traditional silver electrode, having reached the purpose of sulfuration resistant all without reacting at high temperature；
The backplate part of internal electrode primarily serves the effect of welding in resistor structure, so the present invention is still
Backing electrode material is used as using silver；
Side electrode material generally has two ways to be formed, and one kind is end silver coating, and another is magnetron sputtering.Due to silver
Sulfuration resistant performance it is not strong, so side electrode of the present invention layer using magnetron sputtering technique deposit nicr layer, communicating surface gold electricity
Pole and back side silver electrode.
Target is the layer of metal nickel dam knot internally deposited on electrode material by the way of the electrochemical deposition
Structure.Nickel dam belongs to barrier layer in three layers of electrode structure, reduces the chip resistor infringement of heat to resistive element in welding process.
Other nickel dam does not melt mutually with outer layer plating tin layers, internal electrode can be protected not occur with the tin layers of melting in welding process mutual
Melt phenomenon, stop erosion of the tin to noble metal.
Outer electrode is the layer of metal tin layers structure deposited by the way of electrochemical deposition on target, should
Layer belong to weld layer in three layers of electrode structure, can by resistor with circuit by being welded to connect.
In a preferred scheme of the invention, resistive element is passed through using the resistance slurry of oxidation ruthenium system or silver-colored palladium system
Silk-screen printing deposits to be formed, or deposits nicr layer by the way of magnetron sputtering and formed；Resistive element is arranged on the surface of substrate,
And the region between connection surface electrode；
In a preferred scheme of the invention, the outer surface of resistive element is additionally provided with protective coating, the protective layer bag
The glass protection coating for being directly covered in resistance external surface is included, and is covered in the protective glass coating on this layer.
Further, in the present invention, the anti-of sulfuration resistant resistor is improved in terms of material and apparatus structure and technique
Curability；Specifically：
Sulfuration resistant design first step be to protection encapsulated layer size modify, according to product overall dimensions and after
The executable optimum size of continuous sliver technique is adjusted.Compared to traditional chip resistor, the present invention is using the secondary encapsulating of increase
Method, thus protection encapsulated layer size it is larger, have more area protective resistance bodies and electrode part；
Second step is that sulfuration resistant chip resistor side electrode uses end face spatter film forming, and stack equipment is used during sputtering
And fixture.The resistor semi handled by a secondary fissure bar is overlayed in fixture, is not interspaced in the middle of every layer of product.Due to end
Metal ion homogeneous film formation on all objects surface in the sputter procedure of face, body surface exposed outside can form one layer of gold
Belong to film, so the second protection glass sides exposed part in increase also form nickel chromium triangle film layer；
Third step is that sulfuration resistant resistor electrode part forms intermediate protective layer and outside soldering by the way of plating
Layer.Electroplating technology can only be deposited on metal material surface, so can form electrodeposited coating on sputtering layer.On protective glass
Nichrome on also can be fine and close in electro-deposition protection nickel dam and tin layers.
Sulfuration resistant design by three above step sulfuration resistant resistor is partially completed, and this is designed to preferably guarantor
Protect resistive element and electrode overlap.Compared with traditional chip resistor, the cladding portion protection encapsulating material on encapsulating material
It is more, and combination between two kinds of materials is not only the progradation grown by coating in electroplating process, is even more passed through
Electrodeposition process on nicr layer forms more firm associative key, so as to improve the protective effect of resistor.
Sulfuration resistant resistor resistive element is partially due to the replacing of electrode material, the preparation of resistance slurry and film resistor
Film forming be different from traditional chip resistor, it is necessary to which the matching to resistance slurry and electrode material is studied.Simultaneously to not
Stoichiometric factor with slurry carries out system call interception with arranging.By many experiments and later stage qualification test, series of products of the present invention
Reach use requirement.
The preparation method of present invention vulcanization resistor comprises the following steps：
First, surface electrode is printed at the two ends in the upper surface of substrate along its length, and the back of the body is printed in the lower surface of substrate
Face electrode, then, being sintered under the conditions of 850 DEG C preferably；
Substrate used thereof of the present invention is preferably 96% aluminium oxide ceramic substrate, with good heat-conductive characteristic；Meanwhile, pottery
Porcelain substrate processes jackknifing cutting according to the demand of product size, crisscross cutting by substrate be divided into it is multiple in the same size and
The substrate of interconnection；
The printing of surface electrode is i.e. along along zig direction, to the two ends of the upper surface of each substrate (i.e. close to holding
The edge of the opposite sides in portion cutting face) printing surface electrode, and cause surface electrode not extend to cutting face (not with quarter
Groove face is directly contacted), i.e., surface electrode is only arranged at non-cutting face；Meanwhile, in the back up backplate of each substrate, together
When, backplate is also not extend to cutting face, i.e. backplate and is also disposed on non-cutting face；
Further, in the present invention printed electrode by the way of silk-screen printing, because gold itself has good stream
Dynamic property, the cutting face of ceramic monolith is printed on according to traditional printing mode, gold can be caused to flow in cutting, cause resistive element
Short circuit, causes resistance to measure, and the preparation and laser resistor trimming process for influenceing subsequent resistance film layer can not be carried out.So
When present invention printing gold is as electrode material, the non-cutting face of ceramic monolith is printed on.Eliminate gravity and gold paste mobility itself
The phenomenon of connection is caused to the electrode after printing.
Then, by silk-screen printing or magnetron sputtering formation resistive element, and the region between surface electrode is covered；Resistive element
Two ends are connected with surface electrode respectively, and cover the region before surface electrode, then, the burning under the conditions of 850 DEG C preferably
Into；
Then, protective coating is formed by printing on resistive element surface, specific steps refer to as follows：First, print is passed through
Brush forms glassivation in resistance external surface, then preferred to be burnt till under the conditions of 600 ± 10 DEG C；Then, to resistive element
Resistance be modified, clean；Finally, encapsulated layer or protective glass layers are formed by printing on revised resistive element surface,
Then print product nominal resistance, then burnt till under the conditions of 200 ± 10 DEG C or 600 ± 10 DEG C；
By widening secondary encapsulating, encapsulating structure is increased to the protection face to resistor body and electrode part
Product.Additionally by the presence of the defects such as bubble, the hole in the adjustment reduction sintering process of encapsulating material composition, to reach more preferably
Protecting effect, prevent corrosion of the sulfide to electrode part.
Then, using stack equipment, by substrate jackknifing in the width direction so that along the adjacent base on substrate width direction
Piece separates (first separation), and obtains the substrate that multiple row substrate two sides are exposed；
The side of ceramic substrate after jackknifing separation, by magnetron sputtering formation side electrode, with communicating surface electrode
And backplate, simultaneously as metal ion homogeneous film formation on all objects surface in end face sputter procedure, exposed outside
Body surface can form layer of metal film, so the second protection glass sides exposed part in increase also form nickel chromium triangle film
Layer；
Sputtering refers to the lotus energy particle bombardment surface of solids (target), the phenomenon for making solid atom (or molecule) be projected from surface.
The particle of injection is in state of atom, frequently referred to sputtered atom mostly.Lotus energy particle for bombarding target can be electronics, ion or
Neutral particle, because ion is easy to accelerate and obtain required kinetic energy under the electric field, therefore is used as projectile using ion mostly.
The particle increases kinetic energy after being also known as incident ion, bombardment target to target material metal ion, finally be deposited to required metal film
Layer surface, forms conductive layer.
Finally, the substrate for side being formed into conductive layer carries out jackknifing again so that half and half finished substrate is completely separated (secondary
Separation)；
Then, sequentially formed in half and half finished substrate internal electrode outer surface by deposition (preferably by electro-deposition)
Target and outer electrode, i.e., using the method for electrochemical deposition, in metal part (the i.e. internal electrode of the naked leakage of resistor
The nickel chromium triangle film layer that outer surface and second protection glass sides exposed part are covered), one layer of barrier metal nickel of deposition and welding
Layer tin；
Electroless nickel layer plays in blocked resistance device welding process heat to resistive element as the intermediate layer of resistor electrode part
Infringement, protect inner electrode noble metal that the phenomenon mutually melted, the conduction of protective resistor do not occur with the scolding tin of melting in addition
Property and globality；
Meanwhile, resistor electrodeposition process is optimized by electroplating process parameters and accompanies plating thing process optimization, improves coating
Consistency and batch resistor coating uniformity.
The preparation technology flow of sulfuration resistant resistor of the present invention refers to as follows：
Scheme one：Printing surface electrode (gold) → printed back electrode (silver) → 850 DEG C burns till → printed resistor body (oxidation
Ruthenium/noble metal) → 850 DEG C are burnt till → print once encapsulating glass → 600 DEG C burn till → laser resistor trimming → cleaning → printing is secondary
Burn till → sliver → end face sputtering → secondary splitting → electroless nickel layer in protective glass → print product nominal resistance → 600 DEG C
→ plating tin lead layer；
Scheme two：Printing surface electrode (gold) → printed back electrode (silver) → 850 DEG C burns till → printed resistor body (oxidation
Ruthenium/noble metal) → 850 DEG C are burnt till → print once encapsulating glass → 600 DEG C burn till → laser resistor trimming → cleaning → printing is secondary
Burn till → sliver → end face sputtering → secondary splitting → electroless nickel layer in protective glass → print product nominal resistance → 200 DEG C
→ plating tin layers；
Scheme one and scheme two only on firing temperature slightly distinguish, this difference main reason is that method one and side
The targeted encapsulating material of method two and outermost layer plating weld layer material composition are different, specifically, in scheme one, second protection
Glass is high-temperature glass material, and its main component is the glass ingredients such as silica, and its solidification temperature is 600 DEG C, corresponding weldering
Material is connect for tin-lead coating；Pure tin coating can be avoided the problem of oxidation of tin palpus easily occur and welding temperature, tin can be reduced
Lead-coat solderability is more excellent.And in scheme two, it is epoxide resin material that second protection, which is peeled off, its solidification temperature is 200 DEG C,
Welding material is pure tin coating；Heavy metal lead is not contained in pure tin coating, the environmentally friendly system requirements of ROSH is reached, is widely used in the people
With the surface mount process of electronic product.
Because the application of the sulfuration resistant resistor of different series is different, so product material is using difference, and then lead
Processing technology is caused also slightly to distinguish.
Further, except preparing sulfuration resistant chip thick film fixed resister according to two methods describeds of scheme one and scheme
Outside, sulfuration resistant chip film fixed resister can also be prepared according to the method for following scheme three, specific method refers to as follows：
Scheme three：Printing surface electrode (gold), → printed back electrode (silver) → 850 DEG C are burnt till, and splash by → printing barrier layer →
Radio resistance body → sputtering protective layer → 400 DEG C heat treatment → laser resistor trimming → cleaning → printing second protection glass → print product
Burn till → sliver → end face sputtering → secondary splitting → electroless nickel layer → plating tin layers in nominal resistance → 200 DEG C.
Three of the above scheme covers chip film fixed resister production technologies and product type all at present, Ke Yiman
Foot all demands in chip resistor production process at present, and can be long-term in high sulfur environment, stable use, with height
Reliability.
Meanwhile, the inventive method can use the different models having determined, the ceramic substrate of size to be produced, and
Size requirement as defined in resistor is reached by sliver of later stage and secondary splitting.
Further, sulfuration resistant resistor of the present invention can be connected by surface mounting technology and circuit progress electrical equipment, extensively
It is general to be applied in the environment such as Aeronautics and Astronautics, ocean, chemical industry, automotive electronics, traditional chip film resistance can not only be replaced completely
Device, while its high reliability, high stability in high-sulfurized substance environment stable in rugged environment can be used, and
Reliability is more excellent.
Embodiment 1
At the two ends of the upper surface of substrate along its length by silk-screen printing surface gold electrode, printed in the lower surface of substrate
Back side silver electrode is brushed, is then burnt till at 850 DEG C；
Oxidation ruthenium system resistive element is formed by silk-screen printing, and covers the region between surface electrode, then in 850 DEG C of bars
Burnt till under part；
In resistance external surface printed glass protective layer, then burnt till at 600 DEG C；Then, using the side of laser cutting
Formula is modified to the resistance of resistive element, to reach desired value；Finally, screen printing scopiform is passed through on revised resistive element surface
Into high temp glass encapsulated layer, then print product nominal resistance, and being burnt till under the conditions of 600 DEG C
By substrate jackknifing in the width direction, the side of the ceramic substrate after jackknifing separation forms side by magnetron sputtering
Face nickel chromium triangle electrode, with communicating surface electrode and backplate；
The substrate that side is formed into conductive layer carries out jackknifing again so that half and half finished substrate is completely separated；At half and half one-tenth
Savor substrate internal electrode outer surface and target nickel dam and outer electrode tin layers, as embodiment are sequentially formed by electro-deposition
1 sulfuration resistant resistor (sulfuration resistant chip thick film fixed resister).
The sulfuration resistant resistor structure of embodiment 1 as shown in figure 1, including：Substrate 1, resistive element 2, protective coating 3, inside
Electrode 4, target 5, and outer electrode 6；
Wherein, resistive element 2 is connected with the surface electrode of internal electrode 4, and the interelectrode region of connection surface；Protection is applied
3 glassivation and high temp glass encapsulated layer to set gradually from the inside to the outside of layer is constituted；Target 5 covers internal electricity
Pole 4, the covering target 5 of outer electrode 6.
Embodiment 2
At the two ends of the upper surface of substrate along its length by silk-screen printing surface gold electrode, printed in the lower surface of substrate
Back side silver electrode is brushed, is then burnt till at 850 DEG C；
By the method formation nichrome resistance body of magnetron sputtering, and the region between surface electrode is covered, then in 850 DEG C of bars
Burnt till under part；
In resistance external surface printed glass protective layer, then burnt till at 600 DEG C；Then, using the side of laser cutting
Formula is modified to the resistance of resistive element, to reach desired value；Finally, screen printing scopiform is passed through on revised resistive element surface
Into acid resistance glassivation, then print product nominal resistance, and being burnt till under the conditions of 200 DEG C
By substrate jackknifing in the width direction, the side of the ceramic substrate after jackknifing separation forms side by magnetron sputtering
Face nickel chromium triangle electrode, with communicating surface electrode and backplate；
The substrate that side is formed into conductive layer carries out jackknifing again so that half and half finished substrate is completely separated；At half and half one-tenth
Savor substrate internal electrode outer surface and target nickel dam and outer electrode tin layers, as embodiment are sequentially formed by electro-deposition
2 sulfuration resistant resistor (sulfuration resistant chip thick film fixed resister).
The sulfuration resistant resistor of experimental example 1 is tested in high-sulfurized substance environment moderate resistance curing capacity
The sulfuration resistant resistor of multiple 510 and 472 two kind of specification is prepared according to the methods described of embodiment 1, experimental group is used as
(sequence number 1-8 in table 1)；Meanwhile, it is control group (table 1 by 135 conventional resistive (common chip thick-film resistor) of commercially available specification
Middle sequence number 9)；
Configuration concentration is 5% sodium sulfide solution, and experimental products are placed on sealed container stored for extended periods, in order to accelerate
Sulphur is to the corrosion rate of product, and sodium sulfide solution is immersed in product bottom, and the direct contact corrosion solution of chip resistor accelerates
Corrosion；
Then, sample stage by stage, the sample time as shown in table 1, makes DPA samples, uses ESEM and spectroscopy detection
Whether contain element sulphur in electrode.
1 resistor sample time of table table
| Sequence number | Model | Specification | Name of product | Sample time (my god) | Sampling state |
| 1 | 1608 | 510 | Sulfuration resistant resistance | 5 | Coating light |
| 2 | 1608 | 472 | Sulfuration resistant resistance | 5 | Coating light |
| 3 | 1608 | 510 | Sulfuration resistant resistance | 15 | Coating blacks |
| 4 | 1608 | 472 | Sulfuration resistant resistance | 15 | Coating blacks |
| 5 | 1608 | 510 | Sulfuration resistant resistance | 20 | Coating blacks |
| 6 | 1608 | 472 | Sulfuration resistant resistance | 20 | Coating blacks |
| 7 | 1608 | 510 | Sulfuration resistant resistance | 47 | Coating blacks |
| 8 | 1608 | 472 | Sulfuration resistant resistance | 47 | Coating blacks |
| 9 | 1608 | 135 | Conventional resistive | 47 | Coating blacks |
From table 1 can, due to the corrosion of sodium sulfide solution, tin coating soak 15 days after occur in that tin coating black
Phenomenon, immersion 47 days after nigrescence phenomenon it is serious.
7 in table 1,8,9 three samples soak 47 days after product appearance pattern as shown in Fig. 2 can see three batches of productions by Fig. 2
There is more serious nigrescence phenomenon in product, and tin coating is partly corroded, and accelerate vulcanization test objective to reach.
Further 47 days (No. 7 samples in table 1) samples are stored to 1608/472 sulfuration resistant resistor vulcanization environment to sweep
Electrode and spectroscopy detection are retouched, experimental result difference is as shown in Figure 3, Figure 4；
From Fig. 3, Fig. 4 testing result, Element detection is carried out one by one to sampling product respectively, sulfuration resistant resistance is not found
There is the phenomenon of element sulphur in device, it is ensured that chip resistor is occurred without because electrode vulcanizes the open failure problem occurred.
Meanwhile, electrode and spectroscopy detection, experimental result point are scanned to conventional chip resistor (No. 9 samples in table 1)
Not as shown in Figure 5, Figure 6；
Under Fig. 5, Fig. 6 result, common chip thick-film resistor same experimental conditions, occurs sulphur member in its electrode
Element.
From above-mentioned Experimental comparison, sulfuration resistant resistor of the present invention can normally make for a long time in high-sulfurized substance environment
With the application in adverse circumstances can be met.
Although illustrate and describing the present invention with specific embodiment, but it will be appreciated that without departing substantially from the present invention's
Many other changes and modification can be made in the case of spirit and scope.It is, therefore, intended that in the following claims
Including belonging to all such changes and modifications in the scope of the invention.
Claims (10)
1. a kind of sulfuration resistant resistor, it is characterised in that the sulfuration resistant resistor includes substrate, electrode, resistive element and guarantor
Protect coating；
Wherein, the electrode includes internal electrode, target and the outer electrode set gradually；
The internal electrode includes being arranged at the surface electrode at substrate surface two ends, being arranged at the backplate of substrate back, with
And substrate side is arranged at for connection surface electrode and the side electrode of backplate；
The resistive element is arranged at substrate surface, and its two ends is connected with surface electrode；
The protective coating is arranged at resistive element surface；
Wherein, the surface electrode is gold electrode.
2. sulfuration resistant resistor according to claim 1, it is characterised in that the protective coating includes being directly arranged at electricity
The glass protection coating of resistance body upper surface, and the encapsulated layer or protective glass coating being arranged at outside glass protection coating；
It is preferred that, the encapsulated layer is epoxy resin enclosed layer；
It is preferred that, the glass protection coating is acid resistance glassivation.
3. sulfuration resistant resistor according to claim 1, it is characterised in that the target is nickel electrode；
And/or, the outer electrode is tin electrode.
4. sulfuration resistant resistor according to claim 1, it is characterised in that the backplate is silver electrode；
And/or, the side electrode is nichrome electrode.
5. sulfuration resistant resistor according to claim 1, it is characterised in that the sulfuration resistant resistor passes through surface mount
It is electrically connected with circuit.
6. the preparation method of sulfuration resistant resistor any one of claim 1-5, it is characterised in that methods described is included such as
Lower step：
Surface electrode is printed at the two ends of the upper surface of substrate along its length, in the lower surface printed back electrode of substrate；It is logical
Silk-screen printing or magnetron sputtering formation resistive element are crossed, and covers the region between surface electrode；On resistive element surface by printing shape
Into protective coating；
By substrate jackknifing in the width direction, the side of the ceramic substrate after jackknifing separation passes through magnetron sputtering formation side electricity
Pole, with communicating surface electrode and backplate；
Internally electrode outer surface sequentially forms target and outer electrode by deposition.
7. preparation method according to claim 6, it is characterised in that the substrate is ceramic substrate, and is provided with jackknifing
Cutting；
It is preferred that, the ceramic substrate is aluminium oxide ceramic substrate.
8. preparation method according to claim 6, it is characterised in that the resistive element surface forms protection painting by printing
Layer comprises the following steps：
First, by being printed on resistance external surface formation glassivation；Then, the resistance to resistive element is modified；Again
Encapsulated layer or protective glass layers are formed by printing on revised resistive element surface；
It is preferred that, the resistance to resistive element is modified repaiies for the resistance to resistive element by the way of laser cutting
Just, to reach desired value.
9. preparation method according to claim 6, it is characterised in that the preparation method also includes that side electrode will be formed
The secondary jackknifing of substrate, and the step of obtain single resistor semi.
10. include the electronic device of sulfuration resistant resistor any one of claim 1-5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710508430.8A CN107331486A (en) | 2017-06-28 | 2017-06-28 | sulfuration resistant resistor and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710508430.8A CN107331486A (en) | 2017-06-28 | 2017-06-28 | sulfuration resistant resistor and preparation method thereof |
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|---|---|
| CN107331486A true CN107331486A (en) | 2017-11-07 |
Family
ID=60198190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710508430.8A Pending CN107331486A (en) | 2017-06-28 | 2017-06-28 | sulfuration resistant resistor and preparation method thereof |
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| CN (1) | CN107331486A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111627630A (en) * | 2020-07-08 | 2020-09-04 | 西安恒翔电子新材料有限公司 | Surface-mounted piezoresistor without external electrode and preparation method thereof |
| CN113808800A (en) * | 2021-09-24 | 2021-12-17 | 广东风华高新科技股份有限公司 | Resistor and manufacturing method thereof |
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| JPH07176402A (en) * | 1993-12-20 | 1995-07-14 | Matsushita Electric Ind Co Ltd | Square chip fixed resistor |
| CN101681705A (en) * | 2007-03-01 | 2010-03-24 | 威世科技公司 | Sulfuration resistant chip resistor and method for making same |
| CN103165250A (en) * | 2013-04-09 | 2013-06-19 | 昆山厚声电子工业有限公司 | Thick-film anti-vulcanization paster resistor and manufacturing method thereof |
| CN105427975A (en) * | 2015-12-29 | 2016-03-23 | 株洲宏达电通科技有限公司 | Anti-sulfuration plate-type thick film fixed resistor and production method thereof |
| CN105913986A (en) * | 2015-02-19 | 2016-08-31 | 罗姆股份有限公司 | Chip resistor and method for manufacturing the same |
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| JPH07176402A (en) * | 1993-12-20 | 1995-07-14 | Matsushita Electric Ind Co Ltd | Square chip fixed resistor |
| CN101681705A (en) * | 2007-03-01 | 2010-03-24 | 威世科技公司 | Sulfuration resistant chip resistor and method for making same |
| CN103165250A (en) * | 2013-04-09 | 2013-06-19 | 昆山厚声电子工业有限公司 | Thick-film anti-vulcanization paster resistor and manufacturing method thereof |
| CN105913986A (en) * | 2015-02-19 | 2016-08-31 | 罗姆股份有限公司 | Chip resistor and method for manufacturing the same |
| CN105427975A (en) * | 2015-12-29 | 2016-03-23 | 株洲宏达电通科技有限公司 | Anti-sulfuration plate-type thick film fixed resistor and production method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111627630A (en) * | 2020-07-08 | 2020-09-04 | 西安恒翔电子新材料有限公司 | Surface-mounted piezoresistor without external electrode and preparation method thereof |
| CN113808800A (en) * | 2021-09-24 | 2021-12-17 | 广东风华高新科技股份有限公司 | Resistor and manufacturing method thereof |
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Application publication date: 20171107 |