CN217641295U - Low-inductance silicon carbide module - Google Patents
Low-inductance silicon carbide module Download PDFInfo
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- CN217641295U CN217641295U CN202221442105.9U CN202221442105U CN217641295U CN 217641295 U CN217641295 U CN 217641295U CN 202221442105 U CN202221442105 U CN 202221442105U CN 217641295 U CN217641295 U CN 217641295U
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Abstract
The utility model discloses a belong to and feel carborundum module technical field, specifically be a low inductance carborundum module, including current input terminal, first pottery copper-clad plate, potsherd, second pottery copper-clad plate, heat dissipation bottom plate, current output terminal, chip and metal connecting block, current input terminal and current output terminal just support through the metal connecting block with first pottery copper-clad plate parallel arrangement, the beneficial effects of the utility model are that: the fifth through hole and the sixth through hole are formed in the second ceramic copper-clad plate, so that the surface area of the second ceramic copper-clad plate is effectively increased, and the heat dissipation efficiency of the second ceramic copper-clad plate is improved; and the heat radiation bottom plate is provided with the heat radiation holes; because the third through hole, the fifth through hole and the fourth through hole are communicated, the first through hole, the sixth through hole and the second through hole are communicated relatively, the heat dissipation effect is better, and the working performance is prevented from being influenced by overhigh temperature.
Description
Technical Field
The utility model relates to a feel carborundum module technical field specifically is a low inductance carborundum module.
Background
The power semiconductor module is an assembly according to a certain function and mode, and the power semiconductor module is formed by combining and encapsulating high-power electronic power devices into a whole according to a certain function. The power semiconductor module can realize different functions according to different packaged components, and can be used as an air cooling module by matching with air cooling heat dissipation, a water cooling module by matching with water cooling heat dissipation and the like. Silicon carbide semiconductors are widely used due to their high operating temperature, higher breakdown voltage strength, higher thermal conductivity, and higher switching frequency.
The utility model discloses a utility model patent of publication No. CN213583744U discloses a low inductance carborundum module, including current input terminal, first ceramic copper-clad plate, potsherd, second ceramic copper-clad plate, radiating bottom plate, current output terminal, chip and metallic interconnect piece, current input terminal and current output terminal just support through metallic interconnect piece with first ceramic copper-clad plate parallel arrangement, the chip welds between first ceramic copper-clad plate and metallic interconnect piece and through metallic interconnect piece and current input terminal and current output terminal bonding, the potsherd welds in the first ceramic copper-clad plate back and links to each other with second ceramic copper-clad plate, second ceramic copper-clad plate links to each other with radiating bottom plate.
The problems in the above patents are: the heat dissipation is performed only by conducting heat through the connection between the components, which is poor in heat dissipation effect and causes performance degradation due to temperature rise during use.
SUMMERY OF THE UTILITY MODEL
In view of the problems existing in the prior low-inductance silicon carbide module, the utility model discloses a low-inductance silicon carbide module.
Therefore, the utility model aims at providing a low inductance carborundum module has solved and has only come the heat conduction through the connection between the part to dispel the heat, the radiating effect of this kind of mode is not good enough, and the temperature risees the problem that leads to the performance reduction during the use.
In order to solve the technical problem, according to the utility model discloses an aspect, the utility model provides a following technical scheme:
a low-inductance silicon carbide module comprises a current input terminal, a first ceramic copper-clad plate, a ceramic plate, a second ceramic copper-clad plate, a heat dissipation bottom plate, a current output terminal, a chip and a metal connecting block, wherein the current input terminal and the current output terminal are arranged in parallel with the first ceramic copper-clad plate and are supported by the metal connecting block;
first through holes are uniformly formed in the upper end of the heat dissipation bottom plate, second through holes are uniformly formed in the lower end of the heat dissipation bottom plate, third through holes are uniformly formed in the left end of the heat dissipation bottom plate, and fourth through holes are uniformly formed in the right end of the heat dissipation bottom plate.
As a preferred scheme of a low inductance carborundum module, wherein: and the distance between the current input terminal, the current output terminal and the second ceramic copper-clad plate is not more than 2mm.
As a preferred scheme of a low inductance carborundum module, wherein: an inserting groove is formed in the heat dissipation bottom plate, and the bottom of the second ceramic copper-clad plate is inserted into the inserting groove.
As a preferred scheme of a low inductance carborundum module, wherein: the first ceramic copper-clad plate is composed of a first ceramic copper-clad plate A and a first ceramic copper-clad plate B, the current input terminal is installed on the first ceramic copper-clad plate A through a metal connecting block, and the current output terminal is installed on the first ceramic copper-clad plate B through the metal connecting block.
As a preferred scheme of a low inductance carborundum module, wherein: the current input terminal and the current output terminal are arranged in a horizontal diagonal straight line and cover more than 30% of the plane area of the second ceramic copper-clad plate.
As a preferred scheme of a low inductance carborundum module, wherein: the first ceramic copper-clad plate A and the first ceramic copper-clad plate B are provided with a plurality of mutually independent copper layers in a separated mode, and each group of chips are distributed on the same copper layer.
As a preferred scheme of a low inductance carborundum module, wherein: and fifth through holes are uniformly formed in the second ceramic copper-clad plate and are parallel to the length direction of the second ceramic copper-clad plate.
As a preferred scheme of a low inductance carborundum module, wherein: and sixth through holes are uniformly formed in the second ceramic copper-clad plate and are parallel to the length direction of the second ceramic copper-clad plate.
As a preferred scheme of a low inductance carborundum module, wherein: fifth through holes are uniformly formed in the second ceramic copper-clad plate, and the fifth through holes are parallel to the length direction of the second ceramic copper-clad plate; and sixth through holes are uniformly formed in the second ceramic copper-clad plate, and are parallel to the length direction of the second ceramic copper-clad plate.
As a preferred scheme of a low inductance carborundum module, wherein: the radiating bottom plate is characterized in that a first radiating rod is arranged on the radiating bottom plate in an integrated forming mode, a first radiating wave piece is arranged on the outer wall of the first radiating rod in an integrated forming mode, a second radiating rod is arranged on the outer wall of the first radiating rod in an integrated forming mode, a second radiating wave piece is arranged on the outer wall of the second radiating rod in an integrated forming mode, and a third radiating wave piece is arranged on the outer wall of the radiating bottom plate in an integrated forming mode.
Compared with the prior art:
1. the fifth through hole and the sixth through hole are formed in the second ceramic copper-clad plate, so that the surface area of the second ceramic copper-clad plate is effectively increased, and the heat dissipation efficiency of the second ceramic copper-clad plate is improved; the heat dissipation bottom plate is provided with the heat dissipation plate;
2. the first through hole, the second through hole, the fourth through hole and the third through hole are arranged, so that the heat dissipation efficiency of the heat dissipation bottom plate is effectively improved; the third radiating wavy sheet, the first radiating rod, the first radiating wavy sheet, the second radiating rod and the second radiating wavy sheet are arranged, so that the radiating efficiency is improved;
3. because the third through hole, the fifth through hole and the fourth through hole are communicated, the first through hole, the sixth through hole and the second through hole are communicated relatively, the heat dissipation effect is better, and the phenomenon that the working performance is influenced due to overhigh temperature is avoided.
Drawings
Fig. 1 is a schematic structural diagram provided in embodiment 1 of the present invention;
fig. 2 is a cross-sectional view of fig. 1 provided in embodiment 1 of the present invention;
fig. 3 is a view provided by a cross section of fig. 1 provided in embodiment 2 of the present invention;
fig. 4 is a diagram provided by a cross section of fig. 1 provided in embodiment 3 of the present invention.
In the figure: the radiating structure comprises a current input terminal 1, a first ceramic copper-clad plate A21, a first ceramic copper-clad plate B22, a ceramic plate 3, a second ceramic copper-clad plate 4, a fifth through hole 41, a sixth through hole 42, a radiating bottom plate 5, an inserting groove 51, a first through hole 52, a second through hole 53, a fourth through hole 54, a third through hole 55, a third radiating wavy sheet 56, a first radiating rod 57, a first radiating wavy sheet 571, a second radiating rod 58, a second radiating wavy sheet 581, a current output terminal 6, a chip 7 and a metal connecting block 8.
Detailed Description
To make the objects, technical solutions and advantages of the present invention clearer, embodiments of the present invention will be described in further detail with reference to the accompanying drawings.
Example 1:
the utility model provides a low inductance carborundum module, please refer to and draw together 1-2, including current input terminal 1, first pottery copper-clad plate, potsherd 3, second pottery copper-clad plate 4, radiating bottom plate 5, current output terminal 6, chip 7 and metallic connecting block 8, current input terminal 1 and current output terminal 6 just support through metallic connecting block 8 with first pottery copper-clad plate parallel arrangement, chip 7 welds between first pottery copper-clad plate and metallic connecting block 8 and through metallic connecting block 8 and current input terminal 1 and the bonding of current output terminal 6, potsherd 3 welds in the first pottery copper-clad plate back and links to each other with second pottery copper-clad plate 4, second pottery copper-clad plate 4 links to each other with radiating bottom plate 5, its characterized in that:
first through holes 52 are uniformly formed in the upper end of the heat dissipation bottom plate 5, second through holes 53 are uniformly formed in the lower end of the heat dissipation bottom plate 5, third through holes 55 are uniformly formed in the left end of the heat dissipation bottom plate 5, and fourth through holes 54 are uniformly formed in the right end of the heat dissipation bottom plate 5.
The distance between the current input terminal 1 and the current output terminal 6 and the second ceramic copper-clad plate 4 is not more than 2mm, the heat dissipation bottom plate 5 is provided with an inserting groove 51, and the bottom of the second ceramic copper-clad plate 4 is inserted into the inserting groove 51.
The first ceramic copper-clad plate comprises first ceramic copper-clad plate A21 and first ceramic copper-clad plate B22, and current input terminal 1 passes through metal connecting block 8 to be installed on first ceramic copper-clad plate A21, and current output terminal 6 passes through metal connecting block 8 to be installed on first ceramic copper-clad plate B22, and current input terminal 1 is the straight line setting of horizontal diagonal angle with current output terminal 6, and covers the planar area that second ceramic copper-clad plate 430% was more than.
The first ceramic copper-clad plate A21 and the first ceramic copper-clad plate B22 are provided with a plurality of copper layers which are mutually independent in a separated mode, each group of chips 7 are distributed on the same copper layer, the second ceramic copper-clad plate 4 is evenly provided with a fifth through hole 41, and the fifth through holes 41 are parallel to the length direction of the second ceramic copper-clad plate 4.
The integrated forming of the bottom of the heat dissipation bottom plate 5 is provided with a first heat dissipation rod 57, the integrated forming of the outer wall of the first heat dissipation rod 57 is provided with a first heat dissipation wave sheet 571, the integrated forming of the outer wall of the first heat dissipation rod 57 is provided with a second heat dissipation rod 58, the integrated forming of the outer wall of the second heat dissipation rod 58 is provided with a second heat dissipation wave sheet 581, and the integrated forming of the outer wall of the heat dissipation bottom plate 5 is provided with a third heat dissipation wave sheet 56.
When the radiating bottom plate is used specifically, the third radiating wavy sheet 56, the first radiating rod 57, the first radiating wavy sheet 571, the second radiating rod 58 and the second radiating wavy sheet 581 increase the surface area of the radiating bottom plate 5, so that the radiating effect of the radiating bottom plate 5 is higher; the first through hole 52, the second through hole 53, the fourth through hole 54 and the third through hole 55 also increase the surface area of the heat dissipation base plate 5, and further improve the heat dissipation efficiency; the fifth through hole 41 increases the surface area of the second ceramic copper-clad plate 4, so that the second ceramic copper-clad plate 4 has a better heat dissipation effect; therefore, the second ceramic copper-clad plate 4, the heat dissipation bottom plate 5 and the metal connecting block 8 together enable the chip 7 to dissipate heat better.
Example 2:
referring to fig. 3, the difference from embodiment 1 is: sixth through holes 42 are uniformly formed in the second ceramic copper-clad plate 4, and the sixth through holes 42 are parallel to the length direction of the second ceramic copper-clad plate 4.
When the radiating bottom plate is used specifically, the third radiating wavy sheet 56, the first radiating rod 57, the first radiating wavy sheet 571, the second radiating rod 58 and the second radiating wavy sheet 581 increase the surface area of the radiating bottom plate 5, so that the radiating effect of the radiating bottom plate 5 is higher; the first through hole 52, the second through hole 53, the fourth through hole 54 and the third through hole 55 also increase the surface area of the heat dissipation base plate 5, and further improve the heat dissipation efficiency; the fifth through hole 41 increases the surface area of the second ceramic copper-clad plate 4, so that the second ceramic copper-clad plate 4 has a better heat dissipation effect; therefore, the second ceramic copper-clad plate 4, the heat dissipation bottom plate 5 and the metal connecting block 8 together enable the chip 7 to dissipate heat better.
Example 3:
referring to fig. 4, the difference from embodiment 1 is: the second ceramic copper-clad plate 4 is uniformly provided with fifth through holes 41, and the fifth through holes 41 are parallel to the length direction of the second ceramic copper-clad plate 4; sixth through holes 42 are uniformly formed in the second ceramic copper-clad plate 4, and the sixth through holes 42 are parallel to the length direction of the second ceramic copper-clad plate 4.
When the radiating bottom plate is used specifically, the third radiating wavy sheet 56, the first radiating rod 57, the first radiating wavy sheet 571, the second radiating rod 58 and the second radiating wavy sheet 581 increase the surface area of the radiating bottom plate 5, so that the radiating effect of the radiating bottom plate 5 is higher; the first through hole 52, the second through hole 53, the fourth through hole 54 and the third through hole 55 also increase the surface area of the heat dissipation base plate 5, and further improve the heat dissipation efficiency; in addition, the fifth through hole 41 and the sixth through hole 42 increase the surface area of the second ceramic copper-clad plate 4, so that the second ceramic copper-clad plate 4 has a better heat dissipation effect; therefore, the second ceramic copper-clad plate 4, the heat dissipation bottom plate 5 and the metal connecting block 8 together enable the chip 7 to dissipate heat better.
While the invention has been described above with reference to an embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, as long as there is no structural conflict, the various features of the disclosed embodiments of the present invention can be used in any combination with each other, and the description of these combinations not exhaustive in this specification is merely for the sake of brevity and resource conservation. Therefore, it is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (10)
1. The utility model provides a low inductance carborundum module, includes current input terminal (1), first pottery copper-clad plate, potsherd (3), second pottery copper-clad plate (4), radiating bottom plate (5), current output terminal (6), chip (7) and metallic connecting block (8), current input terminal (1) and current output terminal (6) just support through metallic connecting block (8) with first pottery copper-clad plate parallel arrangement, chip (7) weld between first pottery copper-clad plate and metallic connecting block (8) and through metallic connecting block (8) and current input terminal (1) and current output terminal (6) bonding, potsherd (3) weld in the first pottery copper-clad plate back and link to each other with second pottery copper-clad plate (4), second pottery copper-clad plate (4) link to each other with radiating bottom plate (5), its characterized in that:
first through holes (52) are uniformly formed in the upper end of the heat dissipation bottom plate (5), second through holes (53) are uniformly formed in the lower end of the heat dissipation bottom plate (5), third through holes (55) are uniformly formed in the left end of the heat dissipation bottom plate (5), and fourth through holes (54) are uniformly formed in the right end of the heat dissipation bottom plate (5).
2. The silicon carbide module with low inductance according to claim 1, wherein the distance between the current input terminal (1) and the current output terminal (6) and the second ceramic copper clad laminate (4) is not more than 2mm.
3. The silicon carbide module with low inductance according to claim 1, wherein the heat dissipation bottom plate (5) is provided with an insertion groove (51), and the bottom of the second ceramic copper-clad plate (4) is inserted into the insertion groove (51).
4. The low-inductance silicon carbide module according to claim 1, wherein the first copper-clad ceramic plate is composed of a first copper-clad ceramic plate A (21) and a first copper-clad ceramic plate B (22), the current input terminal (1) is mounted on the first copper-clad ceramic plate A (21) through a metal connecting block (8), and the current output terminal (6) is mounted on the first copper-clad ceramic plate B (22) through the metal connecting block (8).
5. The silicon carbide module with low inductance according to claim 1, wherein the current input terminal (1) and the current output terminal (6) are arranged in a horizontal diagonal straight line and cover more than 30% of the planar area of the second ceramic copper-clad plate (4).
6. The silicon carbide module with low inductance according to claim 1, wherein the first copper clad laminate A (21) and the first copper clad laminate B (22) are provided with a plurality of mutually independent copper layers at intervals, and each group of chips (7) are distributed on the same copper layer.
7. The low-inductance silicon carbide module according to claim 1, wherein the second copper-clad plate (4) is uniformly provided with fifth through holes (41), and the fifth through holes (41) are parallel to the length direction of the second copper-clad plate (4).
8. The low-inductance silicon carbide module according to claim 1, wherein the second copper-clad ceramic plate (4) is uniformly provided with sixth through holes (42), and the sixth through holes (42) are parallel to the length direction of the second copper-clad ceramic plate (4).
9. The low-inductance silicon carbide module according to claim 1, wherein the second copper-clad plate (4) is uniformly provided with fifth through holes (41), and the fifth through holes (41) are parallel to the length direction of the second copper-clad plate (4); sixth through holes (42) are uniformly formed in the second ceramic copper-clad plate (4), and the sixth through holes (42) are parallel to the length direction of the second ceramic copper-clad plate (4).
10. The silicon carbide module with low inductance according to claim 1, wherein a first heat dissipation rod (57) is integrally formed at the bottom of the heat dissipation base plate (5), a first heat dissipation wavy sheet (571) is integrally formed on the outer wall of the first heat dissipation rod (57), a second heat dissipation rod (58) is integrally formed on the outer wall of the first heat dissipation rod (57), a second heat dissipation wavy sheet (581) is integrally formed on the outer wall of the second heat dissipation rod (58), and a third heat dissipation wavy sheet (56) is integrally formed on the outer wall of the heat dissipation base plate (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221442105.9U CN217641295U (en) | 2022-06-08 | 2022-06-08 | Low-inductance silicon carbide module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221442105.9U CN217641295U (en) | 2022-06-08 | 2022-06-08 | Low-inductance silicon carbide module |
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| Publication Number | Publication Date |
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| CN217641295U true CN217641295U (en) | 2022-10-21 |
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| CN202221442105.9U Active CN217641295U (en) | 2022-06-08 | 2022-06-08 | Low-inductance silicon carbide module |
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- 2022-06-08 CN CN202221442105.9U patent/CN217641295U/en active Active
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